CN103996746B - Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced - Google Patents
Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced Download PDFInfo
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- CN103996746B CN103996746B CN201410219828.6A CN201410219828A CN103996746B CN 103996746 B CN103996746 B CN 103996746B CN 201410219828 A CN201410219828 A CN 201410219828A CN 103996746 B CN103996746 B CN 103996746B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 118
- 239000010703 silicon Substances 0.000 claims abstract description 118
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 100
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000011521 glass Substances 0.000 claims abstract description 48
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000011574 phosphorus Substances 0.000 claims abstract description 28
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 28
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- 238000004140 cleaning Methods 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000007639 printing Methods 0.000 claims abstract description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims abstract description 19
- 239000002019 doping agent Substances 0.000 claims abstract description 14
- 235000008216 herbs Nutrition 0.000 claims abstract description 9
- 238000012360 testing method Methods 0.000 claims abstract description 9
- 210000002268 wool Anatomy 0.000 claims abstract description 9
- 230000012010 growth Effects 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 238000005498 polishing Methods 0.000 claims abstract description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 48
- 239000010408 film Substances 0.000 claims description 28
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 21
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 18
- 229910052796 boron Inorganic materials 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 6
- 238000000637 aluminium metallisation Methods 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910004012 SiCx Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910003087 TiOx Inorganic materials 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- XONPDZSGENTBNJ-UHFFFAOYSA-N molecular hydrogen;sodium Chemical compound [Na].[H][H] XONPDZSGENTBNJ-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 238000002604 ultrasonography Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 6
- 238000004506 ultrasonic cleaning Methods 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 21
- 238000002161 passivation Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000011056 performance test Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
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- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
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- 206010054949 Metaplasia Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a manufacturing method for a PERL crystalline silicon solar cell capable of being massively produced. The method comprises the steps of removing damage of a silicon wafer and making herbs into wool, cleaning the silicon wafer, conducting phosphorus diffusion, removing phosphorosilicate glass on the back face, polishing the back face, removing and cleaning the phosphorosilicate glass, conducting back face aluminum oxide/silicon nitride laminated thin film growth, conducting front face silicon nitride anti-reflection thin film growth, printing type-p dopant on the back face, conducting drying, adopting laser to conduct local area heavy doping on the type-p dopant printing area of the back face, conducting ultrasonic cleaning, printing a back electrode and an aluminum back field on the back face, printing sliver grid lines on the front face, and conducting sintering and testing. According to the manufacturing method for the PERL crystalline silicon solar cell capable of being massively produced, the steps are simple, and operation is easy. The manufacturing method has the advantages that on the basis of business-like industrial equipment, existing conventional cell production equipment of an enterprise production line at present is fully utilized, the equipment investment is fully reduced, and the manufacturing cost of the cell per watt is not increased.
Description
Technical field
The invention belongs to crystal silicon solar energy battery manufacture field, is related to one kind and is related to crystal silicon solar battery back face
Passivation and metallized area local adulterate to form local area back field technology, more particularly to it is a kind of can volume production the PERL crystalline silicon sun
The manufacture method of battery.
Background technology
Under the background become increasingly conspicuous the problems such as energy shortage, shortage of resources and environmental pollution, using natural resourcess too
Sun can generate electricity, and the countermeasure for solving global warming and Fossil fuel exhaustion problem has been taken as, be favored by countries in the world.So
And higher production cost governs its range of application, and as government subsidy is significantly cut down, the production cost of cell piece is reduced,
Improve generating efficiency becomes the extremely urgent problem of each manufacturer.
Modernization solar cell industry metaplasia is produced and developed towards high efficiency, low cost direction, and the back of the body is passivated and metallized area
The representative that local heavy doping technology combines as high efficiency, low cost developing direction, it is advantageous that：
(1) excellent back reflector：Because the presence of cell backside deielectric-coating causes interior back reflection from conventional full aluminum back surface field
65% increases to 92-95%.The absorption of the long glistening light of waves on the one hand increasing, on the other hand especially carries to the trend of following Thin film cell
Technical guarantee is supplied；
(2) the superior passivating back technology of dielectric film：Due to the good passivation of back side deielectric-coating, dielectric film
The back side recombination rate in region is reduced to 10-50cm/s；
(3) metallized area local heavy doping technology：Metal carries out heavy doping with the contact area of silicon, is heavily doped so that this
The minority carrier in region is widened with the gap order of magnitude of majority carrier, and being combined needs the participation of two kinds of carriers, minority
The order of magnitude of carrier reduces inhibiting the compound of metallized area less, and this recombination rate for allowing for back face metalization region can
2000-5000cm/s is reached with ground.
Although the battery structure, University of New South Wales early in last century the nineties just it has been proposed that and
And the crystal silicon solar battery of acquisition world record 25%, but a kind of process of suitable industrialized production does not determine.
The content of the invention
Goal of the invention：Present invention aims to the deficiency in currently available technology, propose it is a kind of can volume production
The manufacture method of PERL crystal-silicon solar cells.
Technical scheme：For achieving the above object, this invention takes following technical scheme：
It is a kind of can volume production PERL crystal-silicon solar cells manufacture method, comprise the following steps：
(1) silicon chip goes to damage and making herbs into wool, cleaning：Select p-type silicon chip as silicon substrate, the p-type silicon chip to selecting goes to damage
Carry out surface matte under alkali liquor afterwards, Chemical cleaning is then carried out in acid condition, remove surface impurity；
(2) phosphorus diffusion：Phosphorus is carried out to the front of silicon chip and diffuses to form n-layer, spread the phosphorosilicate glass conduct of self-assembling formation
The mask of battery front side, realizes that the back side removes the purpose of emitter junction and polishing；
(3) back side phosphorosilicate glass is removed, and realizes polished backside, is removed phosphorosilicate glass and is cleaned；
(4) in the backside oxide aluminum/silicon nitride stack thin film growth of silicon chip；
(5) the front side silicon nitride silicon antireflection film in silicon chip grows；
(6) silicon chip back up p-type dopant and dry；
(7) the p-type dopant printing zone at the back side of silicon chip carries out local heavy doping using laser；
(8) silicon chip is cleaned by ultrasonic；
(9) in the back up back electrode and aluminum back surface field of silicon chip, front printing silver grating line；
(10) sinter, test.
Preferably, p-type silicon chip its resistivity for selecting in step 1 is 0.5-6ohmcm, the making herbs into wool, cleaning tool to silicon chip
Body is：With sodium hydroxide or potassium hydroxide solution that mass fraction is 0.5-2% p-type silicon chip surface is carried out at 75-85 DEG C
Chemical attack, prepares the matte of Pyramid, is subsequently cleaned with the Fluohydric acid. that mass fraction is 0.5-30%.
Preferably, the method that phosphorus diffusion is spread using tubular type phosphorus in step 2, specifically at 600-900 DEG C in diffusion furnace
At a temperature of, using POCL3Phosphorus is carried out to the front of silicon chip and diffuses to form n-layer, make p-type crystalline silicon sheet resistance be 20-150ohm/
sq。
Preferably, the back side phosphorosilicate glass in step 3 is removed, and realizes polished backside, removes phosphorosilicate glass and cleaning
Method, is utilized in line roller type equipment, and the back side removes phosphorosilicate glass, realizes polished backside, then removes front phosphorosilicate glass,
Then adopt mass fraction and clean for the hydrofluoric acid solution of 0.5-30%.
Preferably, the cell backside aluminium oxide in step 4/silicon nitride stack thin film growth adopts SiNx, SiCx or TiOx
It is passivated, the thickness of described aluminum oxide film is 1-100nm.
Preferably, using the method grown silicon nitride antireflection film of PECVD, wherein silicon nitride anti-reflecting film in step 5
Thickness can overturn for the order of 50-120nm, the step 4 and step 5.
Preferably, p-type dopant, institute are printed using the method for silk screen printing or inkjet printing at the back side of silicon in step 6
The p-type dopant stated is boron slurry, and the figure of printing is parallel straight line, and live width is 5-150um, and distance between centers of tracks is 200um-5mm；Step
Local heavy doping is carried out to the p-type dopant at the back side of silicon chip using laser in rapid 7, doped region live width 10-150um is described
P-type dopant be boron slurry.
Preferably, cleaning solution used during ultrasonic cleaning is that mass concentration mixes for the NaOH and isopropanol of 0.5-2%
Solution.
Preferably, back electrode and aluminum are printed using the method for aluminium paste silk screen printing or the method for PVD AM aluminum metallization in step 9
Back surface field.
Preferably, the printing of back electrode and aluminum back surface field can be after the growth of the stack membrane of cell backside terminates in step 9, print
Brush Al is starched and dried, and the back electrode and aluminum back surface field of back point contact are directly formed using LFC techniques.
Beneficial effect：There is advantages below using the present invention of above-mentioned technical proposal：
Specifically, compared with prior art, the technical scheme that the present invention takes has advantage following prominent：
1st, step of the present invention is simple, easily operated, be it is a kind of can the efficient crystal silicon solar batteries of volume production preparation method, its
It is mainly characterized in that on business-like industrial equipment foundation, makes full use of the conventional batteries production that current enterprise's production line has possessed
Equipment, is substantially reduced equipment investment, and does not increase every watt of manufacturing cost of battery；
2nd, the single crystal battery conversion efficiency batch average efficiency prepared using technical solution of the present invention reaches 20.6%.And
Optical attenuation, front main grid, backplate and aluminum back surface field pulling force, and assembly end reliability testing meets TUV standards；
3rd, the present invention by boron doped method overcome it is high-effect can volume production the back of the body passivation point-contact crystalline-silicon solar energy
At cell backside local aluminum back surface field, the high shortcoming of photo-generated carrier recombination rate；
4th, the method that the local area back field of metallized area of the present invention adopts laser doping, this laser doping realizes thin film simultaneously
Perforate and opening area heavy doping, efficiency high, reduce operation, have saved cost.
Description of the drawings
Fig. 1 is the structural representation of the crystal-silicon solar cell of the present invention.
Specific embodiment
The present invention is further elaborated below in conjunction with accompanying drawing and by specific embodiment.
Fig. 1 is the structural representation of the crystal-silicon solar cell prepared using technical scheme, in figure:1- is just
Face Ag electrodes, 2-SiNx antireflective films, 3- phosphorus-diffused layers, 4-p type silicon substrates, 5- aluminium oxidies/protecting film, 6- back sides Al layers, 7- choosings
Selecting property phosphorus heavily doped layer, 8- boron local heavily doped regions.
Embodiment 1：
It is a kind of can volume production PERL crystal-silicon solar cells manufacture method, comprise the following steps：
(1) silicon chip goes to damage and making herbs into wool, cleaning：
Material based on 156mm p-type monocrystalline silicon pieces is selected, its resistivity is 1ohmcm, and the p-type silicon chip to selecting is gone
Chemistry is carried out to p-type silicon chip surface at 75 DEG C with sodium hydroxide or potassium hydroxide solution that mass fraction is 0.5% after damage
Corrosion, prepares the matte of Pyramid, subsequently carries out cleaning with the Fluohydric acid. that mass fraction is 1% and goes the removal of impurity；
(2) phosphorus diffusion：The method spread using tubular type phosphorus, specifically in diffusion furnace at a temperature of 600 DEG C, is adopted
POCL3Phosphorus is carried out to the front of silicon chip and diffuses to form n-layer, make p-type crystalline silicon sheet resistance for 25ohm/sq, self-assembling formation after diffusion
Phosphorosilicate glass as the mask of battery front side, realize that the back side removes the purpose of emitter junction and polishing；
(3) laser (532nm, green glow) realizes selective emitter junction, laser doping area by the use of phosphorosilicate glass as doped source
Sheet resistance be 55ohm/sq；
(4) back side phosphorosilicate glass is removed, and realizes polished backside, is removed phosphorosilicate glass and is cleaned：Rolled online using wet method
Wheel apparatus, the back side removes phosphorosilicate glass (although only carrying out phosphorus in the front of silicon chip diffuses to form phosphorosilicate glass, phosphorus silicon
Glass can penetrate into the back side of silicon chip), polished backside is realized, front phosphorosilicate glass is then removed, then using mass fraction
Hydrofluoric acid solution for 5% is cleaned；
(5) back surface in silicon chip grows aluminum oxide passivation film, the thickness about 25nm of film；
(6) back surface in silicon chip is folded with the method growing silicon oxide/silicon nitride of PECVD (PCVD)
Tunic, the thickness of stack membrane is 40nm；
(7) in the front surface method grown silicon nitride antireflective film of PECVD (PCVD) of silicon chip, subtract
8 thickness of anti-film are 50nm；
(8) at the back side of silicon chip, silk screen printing or inkjet printing printing are starched using boron, is then dried, the figure of printing is
Parallel straight line, live width is 50um, and distance between centers of tracks is 800um；
(9) local heavy doping, doped region are carried out using laser (532nm, green glow) on the boron slurry of the back surface of silicon chip
Live width 25um；
(10) silicon chip is cleaned by ultrasonic, cleaning solution is that NaOH solution that mass concentration is 1.5% and isopropanol are mixed
Solution is closed, the wherein volume ratio of NaOH solution and isopropanol is 1:1；
(11) back surface in silicon chip adopts the method for aluminium paste silk screen printing or the side of PVD (physical vapour deposition (PVD)) AM aluminum metallization
Method prints back electrode and aluminum back surface field, and in the front surface of silicon chip grid line is printed；
(12) sinter, test：It is sintered in sintering furnace, the temperature of sintering is 450 DEG C, forms complete cell piece N+
PP+Structure, after terminating, the battery to preparing carries out performance test.
Step 5,6,7 order can be overturned.
Embodiment 2：
It is a kind of can volume production PERL crystal-silicon solar cells manufacture method, comprise the following steps：
(1) silicon chip goes to damage and making herbs into wool, cleaning：
Material based on 156mm p-type monocrystalline silicon pieces is selected, its resistivity is 2ohmcm, and the p-type silicon chip to selecting is gone
Carry out with the sodium hydroxide or potassium hydroxide solution that mass fraction is 1% chemical corruption after damage to p-type silicon chip surface at 80 DEG C
Erosion, prepares the matte of Pyramid, subsequently carries out cleaning with the Fluohydric acid. that mass fraction is 5% and goes the removal of impurity；
(2) phosphorus diffusion：The method spread using tubular type phosphorus, specifically in diffusion furnace at a temperature of 750 DEG C, is adopted
POCL3Phosphorus is carried out to the front of silicon chip and diffuses to form n-layer, make p-type crystalline silicon sheet resistance for 100ohm/sq, natural shape after diffusion
Into phosphorosilicate glass as the mask of battery front side, realize that the back side removes the purpose of emitter junction and polishing；
(3) laser (532nm, green glow) realizes selective emitter junction, laser doping area by the use of phosphorosilicate glass as doped source
Sheet resistance be 55ohm/sq；
(4) back side phosphorosilicate glass is removed, and realizes polished backside, is removed phosphorosilicate glass and is cleaned：Rolled online using wet method
Wheel apparatus, the back side removes phosphorosilicate glass (although only carrying out phosphorus in the front of silicon chip diffuses to form phosphorosilicate glass, phosphorus silicon
Glass can penetrate into the back side of silicon chip), polished backside is realized, front phosphorosilicate glass is then removed, then using mass fraction
Hydrofluoric acid solution for 1% is cleaned；
(5) back surface in silicon chip grows aluminum oxide passivation film, the thickness about 10nm of film；
(6) back surface in silicon chip is folded with the method growing silicon oxide/silicon nitride of PECVD (PCVD)
Tunic, the thickness of stack membrane is 120nm；
(7) in the front surface method grown silicon nitride antireflective film of PECVD (PCVD) of silicon chip, subtract
8 thickness of anti-film are 80nm；
(8) at the back side of silicon chip, silk screen printing or inkjet printing printing are starched using boron, is then dried, the figure of printing is
Parallel straight line, live width is 120um, and distance between centers of tracks is 1mm；
(9) local heavy doping, doped region are carried out using laser (532nm, green glow) on the boron slurry of the back surface of silicon chip
Live width 50um；
(10) silicon chip is cleaned by ultrasonic, cleaning solution is that NaOH solution that mass concentration is 0.5% and isopropanol are mixed
Solution is closed, the wherein volume ratio of NaOH solution and isopropanol is 1:1；
(11) back surface in silicon chip adopts the method for aluminium paste silk screen printing or the side of PVD (physical vapour deposition (PVD)) AM aluminum metallization
Method prints back electrode and aluminum back surface field, and in the front surface of silicon chip grid line is printed；
(12) sinter, test：It is sintered in sintering furnace, the temperature of sintering is 600 DEG C, forms complete cell piece N+
PP+Structure, after terminating, the battery to preparing carries out performance test.
Step 5,6,7 order can be overturned.
Embodiment 3：
It is a kind of can volume production PERL crystal-silicon solar cells manufacture method, comprise the following steps：
(1) silicon chip goes to damage and making herbs into wool, cleaning：
Material based on 156mm p-type monocrystalline silicon pieces is selected, its resistivity is 3ohmcm, and the p-type silicon chip to selecting is gone
Carry out with the sodium hydroxide or potassium hydroxide solution that mass fraction is 2% chemical corruption after damage to p-type silicon chip surface at 85 DEG C
Erosion, prepares the matte of Pyramid, subsequently carries out cleaning with the Fluohydric acid. that mass fraction is 15% and goes the removal of impurity；
(2) phosphorus diffusion：The method spread using tubular type phosphorus, specifically in diffusion furnace at a temperature of 800 DEG C, is adopted
POCL3Phosphorus is carried out to the front of silicon chip and diffuses to form n-layer, make p-type crystalline silicon sheet resistance for 150ohm/sq, natural shape after diffusion
Into phosphorosilicate glass as the mask of battery front side, realize that the back side removes the purpose of emitter junction and polishing；
(3) laser (532nm, green glow) realizes selective emitter junction, laser doping area by the use of phosphorosilicate glass as doped source
Sheet resistance be 55ohm/sq；
(4) back side phosphorosilicate glass is removed, and realizes polished backside, is removed phosphorosilicate glass and is cleaned：Rolled online using wet method
Wheel apparatus, the back side removes phosphorosilicate glass (although only carrying out phosphorus in the front of silicon chip diffuses to form phosphorosilicate glass, phosphorus silicon
Glass can penetrate into the back side of silicon chip), polished backside is realized, front phosphorosilicate glass is then removed, then using mass fraction
Hydrofluoric acid solution for 30% is cleaned；
(5) back surface in silicon chip grows aluminum oxide passivation film, the thickness about 100nm of film；
(6) back surface in silicon chip is folded with the method growing silicon oxide/silicon nitride of PECVD (PCVD)
Tunic, the thickness of stack membrane is 200nm；
(7) in the front surface method grown silicon nitride antireflective film of PECVD (PCVD) of silicon chip, subtract
8 thickness of anti-film are 120nm；
(8) at the back side of silicon chip, silk screen printing or inkjet printing printing are starched using boron, is then dried, the figure of printing is
Parallel straight line, live width is 150um, and distance between centers of tracks is 5mm；
(9) local heavy doping, doped region are carried out using laser (532nm, green glow) on the boron slurry of the back surface of silicon chip
Live width 150um；
(10) silicon chip is cleaned by ultrasonic, cleaning solution is NaOH solution that mass concentration is 2% and isopropanol mixing
The volume ratio of solution, wherein NaOH solution and isopropanol is 1:1；
(11) after the stack membrane growth of cell backside terminates, printing Al is starched and dried, directly (laser sintered using LFC
Method) technique formed back point contact back electrode and aluminum back surface field, then in silicon chip front surface printing grid line；
(12) sinter, test：It is sintered in sintering furnace, the temperature of sintering is 800 DEG C, forms complete cell piece N+
PP+Structure, after terminating, the battery to preparing carries out performance test.
Step 5,6,7 order can be overturned.
Embodiment 4：
It is a kind of can volume production PERL crystal-silicon solar cells manufacture method, comprise the following steps：
(1) silicon chip goes to damage and making herbs into wool, cleaning：
Material based on 156mm p-type monocrystalline silicon pieces is selected, its resistivity is 6ohmcm, and the p-type silicon chip to selecting is gone
Carry out with the sodium hydroxide or potassium hydroxide solution that mass fraction is 2% chemical corruption after damage to p-type silicon chip surface at 85 DEG C
Erosion, prepares the matte of Pyramid, subsequently carries out cleaning with the Fluohydric acid. that mass fraction is 30% and goes the removal of impurity；
(2) phosphorus diffusion：The method spread using tubular type phosphorus, specifically in diffusion furnace at a temperature of 900 DEG C, is adopted
POCL3Phosphorus is carried out to the front of silicon chip and diffuses to form n-layer, make p-type crystalline silicon sheet resistance for 145ohm/sq, natural shape after diffusion
Into phosphorosilicate glass as the mask of battery front side, realize that the back side removes the purpose of emitter junction and polishing；
(3) laser (532nm, green glow) realizes selective emitter junction, laser doping area by the use of phosphorosilicate glass as doped source
Sheet resistance be 55ohm/sq；
(4) back side phosphorosilicate glass is removed, and realizes polished backside, is removed phosphorosilicate glass and is cleaned：Rolled online using wet method
Wheel apparatus, the back side removes phosphorosilicate glass (although only carrying out phosphorus in the front of silicon chip diffuses to form phosphorosilicate glass, phosphorus silicon
Glass can penetrate into the back side of silicon chip), polished backside is realized, front phosphorosilicate glass is then removed, then using mass fraction
Hydrofluoric acid solution for 28% is cleaned；
(5) in the front surface method grown silicon nitride antireflective film of PECVD (PCVD) of silicon chip, subtract
8 thickness of anti-film are 100nm；
(6) back surface in silicon chip grows aluminum oxide passivation film, the thickness about 65nm of film；
(7) back surface in silicon chip is folded with the method growing silicon oxide/silicon nitride of PECVD (PCVD)
Tunic, the thickness of stack membrane is 150nm；
(8) at the back side of silicon chip, silk screen printing or inkjet printing printing are starched using boron, is then dried, the figure of printing is
Parallel straight line, live width is 135m, and distance between centers of tracks is 3mm；
(9) local heavy doping, doped region are carried out using laser (532nm, green glow) on the boron slurry of the back surface of silicon chip
Live width 110um；
(10) silicon chip is cleaned by ultrasonic, cleaning solution is that NaOH solution that mass concentration is 1.5% and isopropanol are mixed
Solution is closed, the wherein volume ratio of NaOH solution and isopropanol is 1:1；
(11) after the stack membrane growth of cell backside terminates, printing Al is starched and dried, directly (laser sintered using LFC
Method) technique formed back point contact back electrode and aluminum back surface field, then in silicon chip front surface printing grid line；
(12) sinter, test：It is sintered in sintering furnace, the temperature of sintering is 700 DEG C, forms complete cell piece N+
PP+Structure, after terminating, the battery to preparing carries out performance test.
Step 5,6,7 order can be overturned.
The crystal silicon solar batteries conversion efficiency batch average efficiency prepared using the technical scheme of above-mentioned enforcement is reached
20.6%.And optical attenuation, front main grid, backplate and aluminum back surface field pulling force, and assembly end reliability testing meet TUV mark
It is accurate.
The above is the more preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill of the art
For personnel, under the premise without departing from the principles of the invention, the modification to the various equivalent form of values of the present invention falls within the application
Claims limited range.
Claims (9)
1. it is a kind of can volume production PERL crystal-silicon solar cell manufacture method, it is characterised in that：Comprise the following steps：
(1) silicon chip goes to damage and making herbs into wool, cleaning：P-type silicon chip is selected as silicon substrate, the p-type silicon chip to selecting go to damage after
Surface matte is carried out under alkali liquor, Chemical cleaning is then carried out in acid condition, remove surface impurity；P-type silicon chip its resistance
Rate is 0.5-6ohmcm, and the making herbs into wool, cleaning to silicon chip is specially：With sodium hydroxide or hydrogen-oxygen that mass fraction is 0.5-2%
Change potassium solution carries out chemical attack at 75-85 DEG C to p-type silicon chip surface, prepares the matte of Pyramid, subsequently uses matter
Amount fraction is cleaned for the Fluohydric acid. of 0.5-30%；
(2) phosphorus diffusion：Phosphorus is carried out to the front of silicon chip and diffuses to form n-layer, spread the phosphorosilicate glass of self-assembling formation as battery
Positive mask, realizes that the back side removes the purpose of emitter junction and polishing；
(3) back side phosphorosilicate glass is removed, and realizes polished backside, is removed phosphorosilicate glass and is cleaned；
(4) in the backside oxide aluminum/silicon nitride stack thin film growth of silicon chip；
(5) the front side silicon nitride silicon antireflection film in silicon chip grows；
(6) silicon chip back up p-type dopant and dry；
(7) the p-type dopant printing zone at the back side of silicon chip carries out local heavy doping using laser；
(8) silicon chip is cleaned by ultrasonic；
(9) in the back up back electrode and aluminum back surface field of silicon chip, front printing silver grating line；
(10) sinter, test.
2. it is according to claim 1 can volume production PERL crystal-silicon solar cells manufacture method, it is characterised in that：Step
The method that phosphorus diffusion is spread using tubular type phosphorus in 2, specifically in diffusion furnace at a temperature of 600-900 DEG C, using POCL3It is right
The front of silicon chip carries out phosphorus and diffuses to form n-layer, makes P-type crystal silicon sheet resistance be 20-150ohm/sq.
3. it is according to claim 1 can volume production PERL crystal-silicon solar cells manufacture method, it is characterised in that：Step
Back side phosphorosilicate glass in 3 is removed, and realizes polished backside, removes phosphorosilicate glass and the method cleaned, and is utilized in line roller
Formula equipment, the back side remove phosphorosilicate glass, realize polished backside, then remove front phosphorosilicate glass, then adopt mass fraction for
The hydrofluoric acid solution cleaning of 0.5-30%.
4. it is according to claim 1 can volume production PERL crystal-silicon solar cells manufacture method, it is characterised in that：Step
Cell backside aluminium oxide in 4/silicon nitride stack thin film growth is passivated using SiNx, SiCx or TiOx, described oxidation
The thickness of aluminium film is 1-100nm.
5. it is according to claim 1 can volume production PERL crystal-silicon solar cells manufacture method, it is characterised in that：Step
In 5 using PECVD method grown silicon nitride antireflection film, wherein the thickness of silicon nitride anti-reflecting film be 50-120nm, institute
Stating the order of step 4 and step 5 can overturn.
6. it is according to claim 1 can volume production PERL crystal-silicon solar cells manufacture method, it is characterised in that：Step
P-type dopant is printed using the method for silk screen printing or inkjet printing at the back side of silicon in 6, described p-type dopant is boron slurry,
The figure of printing is parallel straight line, and live width is 5-150um, and distance between centers of tracks is 200um-5mm；Using laser to silicon chip in step 7
The p-type dopant at the back side carry out local heavy doping, doped region live width 10-150um, described p-type dopant is boron slurry.
7. it is according to claim 1 can volume production PERL crystal-silicon solar cells manufacture method, it is characterised in that：Ultrasound
Cleaning solution used is the NaOH and isopropyl alcohol mixture that mass concentration is 0.5-2% during cleaning.
8. it is according to claim 1 can volume production PERL crystal-silicon solar cells manufacture method, it is characterised in that：Step
Back electrode and aluminum back surface field are printed in 9 using the method for aluminium paste silk screen printing or the method for PVD AM aluminum metallization.
9. it is according to claim 1 can volume production PERL crystal-silicon solar cells manufacture method, it is characterised in that：Step
The printing of back electrode and aluminum back surface field in 9 can be after the growth of the stack membrane of cell backside terminates, and printing Al is starched and dried, directly profit
The back electrode and aluminum back surface field of back point contact are formed with LFC techniques.
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| CN105185866B (en) * | 2015-08-15 | 2017-07-28 | 常州天合光能有限公司 | A kind of preparation method of efficient passivation contact crystalline silicon solar cell |
| CN108521830A (en) * | 2015-12-28 | 2018-09-11 | 国际太阳能研究中心康斯坦茨协会 | Method for producing double-sided solar battery and double-sided solar battery |
| CN106784131A (en) * | 2016-11-11 | 2017-05-31 | 揭阳中诚集团有限公司 | Solar battery sheet based on N-type silicon chip and preparation method thereof |
| CN106784033A (en) * | 2016-12-13 | 2017-05-31 | 广东爱康太阳能科技有限公司 | A kind of crystal silicon solar energy battery and preparation method thereof |
| CN106784048A (en) * | 2016-12-30 | 2017-05-31 | 苏州阿特斯阳光电力科技有限公司 | The preparation method and its obtained battery of a kind of local doped crystal silicon solar cell |
| CN106784049B (en) * | 2016-12-30 | 2019-12-10 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of local doped crystalline silicon solar cell and prepared cell |
| CN106981522B (en) * | 2017-03-03 | 2018-07-10 | 浙江爱旭太阳能科技有限公司 | PERC solar cells of photoelectric conversion efficiency and preparation method thereof can be improved |
| CN107706268A (en) * | 2017-09-20 | 2018-02-16 | 东方环晟光伏（江苏）有限公司 | Using the preparation method of the PERT crystal-silicon solar cells of new doping way |
| CN109686814A (en) * | 2017-10-19 | 2019-04-26 | 上海神舟新能源发展有限公司 | A kind of production method that back is passivated efficient p-type PERL double-side cell |
| CN109449248A (en) * | 2018-09-17 | 2019-03-08 | 浙江爱旭太阳能科技有限公司 | A kind of preparation method of high efficiency SE-PERC solar battery |
| CN110828583B (en) * | 2019-09-24 | 2021-09-14 | 苏州腾晖光伏技术有限公司 | Crystalline silicon solar cell with locally passivated and contacted front surface and preparation method thereof |
| CN111370535A (en) * | 2020-03-16 | 2020-07-03 | 南通大学 | Double-sided power generation PERL solar cell and preparation method thereof |
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