CN103904126B - Thin film transistor (TFT) - Google Patents
Thin film transistor (TFT) Download PDFInfo
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- CN103904126B CN103904126B CN201210573691.5A CN201210573691A CN103904126B CN 103904126 B CN103904126 B CN 103904126B CN 201210573691 A CN201210573691 A CN 201210573691A CN 103904126 B CN103904126 B CN 103904126B
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- Prior art keywords
- gallium oxide
- thin film
- oxide zinc
- tft
- film transistor
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- 239000010409 thin film Substances 0.000 title claims abstract description 42
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 68
- 239000011701 zinc Substances 0.000 claims abstract description 68
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 58
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 17
- 238000009413 insulation Methods 0.000 claims abstract description 15
- 229910052738 indium Inorganic materials 0.000 claims abstract description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 description 88
- 239000004065 semiconductor Substances 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005555 GaZnO Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
A kind of thin film transistor (TFT), the grid including substrate, being arranged on substrate, the gate insulation layer being arranged on substrate and covering grid, covering at the indium gallium zinc channel layer of gate electrode insulation surface and be arranged on the gallium oxide zinc layers of channel layer surface, the opposite sides of this gallium oxide zinc layers is formed with source electrode and drain electrode.The thin film transistor (TFT) of this kind of structure has the advantage that tracking current is low, current on/off ratio is good.
Description
Technical field
The present invention relates to a kind of thin film transistor (TFT).
Background technology
Along with the progress of Technology, thin film transistor (TFT) has been widely applied among display, to adapt to the demands such as slimming and the miniaturization of display.Thin film transistor (TFT) generally comprises the ingredients such as grid, drain electrode, source electrode and channel layer, and it changes the electric conductivity of channel layer by the voltage of control gate, makes to be formed between source electrode and drain electrode the state of on or off.
Indium gallium zinc (Indium Gallium Zinc Oxide, IGZO) thin film transistor (TFT) has been studied the most widely and has been applied on liquid crystal panel, particularly high-res and large size panel.But because of IGZO thin film easily by such environmental effects such as the temperature of external environment condition, oxygen content, steam, illumination, therefore, when using sputtering process to prepare IGZO thin film, plasma in processing procedure can produce infringement to IGZO thin film, and then affecting the parameters such as the current on/off ratio of IGZO thin film transistor (TFT), surface carrier concentration so that thin film transistor (TFT) quality is the highest.
Summary of the invention
In view of this, it is necessary to the thin film transistor (TFT) of a kind of better quality is provided.
A kind of thin film transistor (TFT), the grid including substrate, being arranged on substrate, the gate insulation layer being arranged on substrate and covering grid, covering at the indium gallium zinc channel layer of gate electrode insulation surface and be arranged on the gallium oxide zinc layers of channel layer surface, the opposite sides of this gallium oxide zinc layers is formed with source electrode and drain electrode.
In the thin film transistor (TFT) that the present invention provides, owing to gallium oxide zinc layers not having phosphide atom, therefore carrier cannot use the 5s track of phosphide atom to form conductivity, and gallium atom forms a scattering center between interstitial void in gallium oxide zinc layers, making crystal structure in gallium oxide zinc layers produce deformation, gallium atom also can suppress oxygen defect (Oxygen simultaneously
Vacancy) formation, therefore can effectively reduce thin film carrier concentration, lowers tracking current, makes the current on/off ratio of thin film transistor (TFT) obtain and preferably improves.
Accompanying drawing explanation
Fig. 1 is the structural representation of the thin film transistor (TFT) that first embodiment of the invention provides.
Fig. 2 is the structural representation of the gallium nitride zinc layers of the thin film transistor (TFT) that the embodiment of the present invention provides.
Fig. 3 is the structural representation of the thin film transistor (TFT) that second embodiment of the invention provides.
Fig. 4 is the structural representation of the thin film transistor (TFT) that third embodiment of the invention provides.
Main element symbol description
| Thin film transistor (TFT) | 10、20、30 |
| Substrate | 11 |
| Grid | 12 |
| Gate insulation layer | 13 |
| Channel layer | 14 |
| Gallium oxide zinc layers | 15 |
| Gallium oxide zinc semiconductor layer | 150、152、154、156 |
| Source electrode | 16 |
| Drain electrode | 17 |
Following detailed description of the invention will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Detailed description of the invention
Referring to Fig. 1, the thin film transistor (TFT) 10 that first embodiment of the invention provides includes substrate 11, grid 12, gate insulation layer 13, channel layer 14, gallium oxide zinc (GaZnO) layer 15, source electrode 16 and drain electrode 17.
This substrate 11 is used for carrying grid 12 and gate insulation layer 13.The making material of this substrate 11 can be glass, quartz, silicon wafer, Merlon, polymethyl methacrylate or metal forming etc..
This grid 12 is arranged on the surface of substrate 11.In the present embodiment, described grid 12 is arranged on the central area of substrate 11.The making material of grid 12 is selected from copper, aluminum, nickel, magnesium, chromium, molybdenum, tungsten and alloy thereof.
This gate insulation layer 13 covers on the surface of grid 12.In the present embodiment, this gate insulation layer 13 extends to contact with substrate 11.The material that makes of gate insulation layer 13 includes oxide S iOx of silicon, and the nitride SiNx of silicon or the nitrogen oxides SiONx of silicon, or the insulant of other high-ks, such as Ta2O5Or HfO2。
This channel layer 14 is arranged on the surface of gate insulation layer 13.This channel layer 14 uses indium gallium zinc (IGZO) semi-conducting material to make.
This gallium oxide zinc layers 15 is arranged on the surface of channel layer 14, and this source electrode 16 and drain electrode 17 are formed in gallium oxide zinc layers 15.
The thickness of this gallium oxide zinc layers 15 is preferably greater than 0.5 nanometer (nm), it is furthermore preferred that the thickness of this gallium oxide zinc layers 15 is more than 0.5 nanometer and less than 100 nanometers.In the present embodiment, the thickness of gallium oxide zinc layers 15 is 20 nanometers.
The thickness of this gallium oxide zinc layers 15 may be configured as 1:100 ~ 5:1 with the thickness of channel layer 14 than scope, and in the present embodiment, the thickness of the thickness of this gallium oxide zinc layers 15 and channel layer 14 is than for 1:100 or 5:1.
This gallium nitride zinc layers 15 can be monolayer or multiple structure:
When gallium nitride zinc layers 15 is single layer structure, in this gallium nitride zinc layers 15, the content of gallium can be set to as " being gradually increased along the direction away from channel layer 14 "；
nullWhen gallium oxide zinc layers 15 is multiple structure，See Fig. 2，This gallium oxide zinc layers 15 is by multilamellar gallium oxide zinc semiconductor layer 150、152、154、156 stackings form，And this multilamellar gallium oxide zinc semiconductor layer 150、152、154、In 156, the composition of gallium is different，Preferably，This multilamellar gallium oxide zinc semiconductor layer 150、152、154、The content of gallium during the content of gallium is less than " distance channel layer gallium oxide zinc semiconductor layer farther out " in " the gallium oxide zinc semiconductor layer that distance channel layer is nearer " in 156，Namely，The gallium content of gallium oxide zinc semiconductor layer 150 is less than gallium oxide zinc semiconductor layer 152、The gallium content of gallium oxide zinc semiconductor layer 152 is less than gallium oxide zinc semiconductor layer 154、The gallium content of gallium oxide zinc semiconductor layer 154 is less than gallium oxide zinc semiconductor layer 156.
In the present embodiment, gallium oxide zinc layers 15 covers whole channel layer 14, and described source electrode 16 and drain electrode 17 are formed on the upper surface of gallium oxide zinc layers 15.This gallium oxide zinc layers 15 thickness everywhere is equal, thus " carrying described source electrode 16 and the thickness of the two side areas of the gallium oxide zinc layers 15 of drain electrode 17 " is identical with " the middle section thickness of gallium oxide zinc layers 15 ".
Seeing Fig. 3, the thin film transistor (TFT) 20 that second embodiment of the invention provides includes substrate 11, grid 12 equally, gate insulation layer 13, channel layer 14, gallium oxide zinc layers 15, source electrode 16 and drain electrode 17, the structure of this thin film transistor (TFT) 20 is substantially the same with the thin film transistor (TFT) 10 of first embodiment.Unlike thin film transistor (TFT) 10: the gallium oxide zinc layers 15 middle section thickness of thin film transistor (TFT) 20 is more than thickness of two sides, thus " carrying the thickness of the two side areas of the gallium oxide zinc layers 15 of described source electrode 16 and drain electrode 17 " is less than " the middle section thickness of gallium oxide zinc layers 15 ".
Seeing Fig. 4, the thin film transistor (TFT) 30 that third embodiment of the invention provides includes substrate 11, grid 12, gate insulation layer 13, channel layer 14, gallium oxide zinc layers 15, source electrode 16 and drain electrode 17 equally.The structure of this thin film transistor (TFT) 30 is substantially the same with the thin film transistor (TFT) 10 of first embodiment.Unlike thin film transistor (TFT) 10: the gallium oxide zinc layers 15 of thin film transistor (TFT) 30 only covers the middle part of channel layer 14, described source electrode 16 and drain electrode 17 are then formed directly on channel layer 14 and cover the upper surface of channel layer 14 both sides.
In the thin film transistor (TFT) 10,20,30 that the embodiment of the present invention provides, owing to gallium oxide zinc layers 15 not having phosphide atom, therefore carrier cannot use the 5s track of phosphide atom to form conductivity, and gallium atom forms a scattering center between interstitial void in gallium oxide zinc layers 15, making crystal structure in gallium oxide zinc layers 15 produce deformation, gallium atom also can suppress oxygen defect (Oxygen simultaneously
Vacancy) formation, therefore can effectively reduce thin film carrier concentration, lowers tracking current, makes the current on/off ratio of thin film transistor (TFT) 10,20,30 obtain and preferably improves.
It should be noted that, the gallium oxide zinc layers 15 that above-described embodiment uses can replace with other metal oxide semiconductor layer such as aluminum zinc oxide (AZO) semiconductor layers without indium, but can also replace, as long as can ensure that this metal oxide semiconductor layer has relatively low carrier concentration with the metal oxide semiconductor layer that other kinds in addition to gallium oxide zinc layers contain gallium without indium.
Additionally, the present invention uses gallium oxide zinc layers 15 to be to make its carrier concentration less than 10 in implementing16cm-3.It is understood that this metal oxide semiconductor layer is also not limited to the material that this specification is introduced, as long as the carrier concentration of the metal oxide semiconductor layer used is less than 1016cm-3, can substantially lower tracking current, promote the quality of indium gallium zinc thin film transistor (TFT).
Additionally, the gallium oxide zinc layers 15 used in the present invention can make infrared ray pass through, through test determination, when the thickness of gallium oxide zinc layers 15 is 20 nanometer, although wavelength has absorption less than 400 nanometers, but wavelength is more than or equal to 60% more than visible ray and the ultrared transmitance of 400 nanometers, even at longer wavelengths of infrared ray, the transmitance of gallium oxide zinc layers levels off to 100%, thus has good light permeability, does not affect the light transmission as liquid crystal panel.
It is understood that for the person of ordinary skill of the art, can conceive according to the technology of the present invention and make change and the deformation that other various pictures are answered, and all these change all should belong to the protection domain of the claims in the present invention with deformation.
Claims (3)
1. a thin film transistor (TFT), the grid including substrate, being arranged on substrate, be arranged on substrate and
Cover the gate insulation layer of grid and cover the indium gallium zinc channel layer in gate electrode insulation surface, its feature
It is: this thin film transistor (TFT) also includes a gallium oxide zinc layers being arranged on channel layer surface, this gallium oxide zinc
The opposite sides of layer is formed with source electrode and drain electrode, and described gallium oxide zinc layers covers whole channel layer, described source
Pole and drain electrode are formed in gallium oxide zinc layers.
2. thin film transistor (TFT) as claimed in claim 1, it is characterised in that carry described source electrode and drain electrode
The thickness of gallium oxide zinc layers two side areas identical with the middle section thickness of gallium oxide zinc layers.
3. thin film transistor (TFT) as claimed in claim 1, it is characterised in that carry described source electrode, drain electrode
The thickness of gallium oxide zinc layers two side areas less than the middle section thickness of gallium oxide zinc layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210573691.5A CN103904126B (en) | 2012-12-26 | 2012-12-26 | Thin film transistor (TFT) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210573691.5A CN103904126B (en) | 2012-12-26 | 2012-12-26 | Thin film transistor (TFT) |
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| Publication Number | Publication Date |
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| CN103904126A CN103904126A (en) | 2014-07-02 |
| CN103904126B true CN103904126B (en) | 2016-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210573691.5A Active CN103904126B (en) | 2012-12-26 | 2012-12-26 | Thin film transistor (TFT) |
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| Country | Link |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10644140B2 (en) * | 2016-06-30 | 2020-05-05 | Intel Corporation | Integrated circuit die having back-end-of-line transistors |
| CN106601821A (en) * | 2016-11-04 | 2017-04-26 | 东莞市联洲知识产权运营管理有限公司 | Thin-film transistor having good anti-static breakdown capability |
| CN108198860A (en) * | 2017-12-29 | 2018-06-22 | 深圳市金誉半导体有限公司 | Vertical bilateral diffusion field-effect tranisistor and preparation method thereof |
| CN112864231A (en) * | 2021-01-28 | 2021-05-28 | 合肥维信诺科技有限公司 | Thin film transistor, preparation method thereof, array substrate and display panel |
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| CN102167954A (en) * | 2010-12-31 | 2011-08-31 | 长兴化学工业股份有限公司 | Coating composition and use thereof |
| CN102347335A (en) * | 2010-07-23 | 2012-02-08 | 三星电子株式会社 | Display substrate and method of manufacturing same |
| WO2012124434A1 (en) * | 2011-03-14 | 2012-09-20 | 富士フイルム株式会社 | Field effect transistor, display device, sensor, and method for producing field effect transistor |
| TW201246317A (en) * | 2009-10-21 | 2012-11-16 | Semiconductor Energy Lab | Semiconductor device and manufacturing method the same |
| US8330155B2 (en) * | 2008-11-14 | 2012-12-11 | Samsung Electronics Co., Ltd. | Semiconductor devices having channel layer patterns on a gate insulation layer |
| CN102832253A (en) * | 2011-06-14 | 2012-12-19 | 三星电子株式会社 | Thin film transistor, |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI397184B (en) * | 2009-04-29 | 2013-05-21 | Ind Tech Res Inst | Oxide semiconductor thin-film transistor |
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2012
- 2012-12-26 CN CN201210573691.5A patent/CN103904126B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8330155B2 (en) * | 2008-11-14 | 2012-12-11 | Samsung Electronics Co., Ltd. | Semiconductor devices having channel layer patterns on a gate insulation layer |
| TW201246317A (en) * | 2009-10-21 | 2012-11-16 | Semiconductor Energy Lab | Semiconductor device and manufacturing method the same |
| CN102347335A (en) * | 2010-07-23 | 2012-02-08 | 三星电子株式会社 | Display substrate and method of manufacturing same |
| CN102167954A (en) * | 2010-12-31 | 2011-08-31 | 长兴化学工业股份有限公司 | Coating composition and use thereof |
| WO2012124434A1 (en) * | 2011-03-14 | 2012-09-20 | 富士フイルム株式会社 | Field effect transistor, display device, sensor, and method for producing field effect transistor |
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Address after: 518000 1st floor, 315 Huachang Road, Langkou Community, Dalang Street, Longhua District, Shenzhen City, Guangdong Province (1st-3rd floor, 14 buildings, 1-3rd floor, 17 buildings, Huachang Road Industrial Zone) Patentee after: Shenzhen Jinyu Semiconductor Co.,Ltd. Address before: 518109 Guangdong Province, Shenzhen New District of Longhua City, Dalang Street Lang Kou community Hua Chang Lu Hua Chang Industrial Zone second 1-3 Patentee before: SHENZHEN JINYU SEMICONDUCTOR Co.,Ltd. |
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Denomination of invention: thin film transistor Effective date of registration: 20220729 Granted publication date: 20160824 Pledgee: Shenzhen small and medium sized small loan Co.,Ltd. Pledgor: Shenzhen Jinyu Semiconductor Co.,Ltd. Registration number: Y2022440020147 |