CN103866293A - Atomic layer deposition device - Google Patents
Atomic layer deposition device Download PDFInfo
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- CN103866293A CN103866293A CN201310683377.7A CN201310683377A CN103866293A CN 103866293 A CN103866293 A CN 103866293A CN 201310683377 A CN201310683377 A CN 201310683377A CN 103866293 A CN103866293 A CN 103866293A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Organic Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to an atomic layer deposition device. The atomic layer deposition device comprises a chamber in which an enclosed reaction space is formed, a first suction and discharge gas unit which supplies a first gas to a substrate supplied into the chamber or discharges the first gas from the substrate supplied into the chamber, and a second suction and discharge gas unit which supplies a second gas to the substrate or discharges the second gas from the substrate; and the substrate performs a relative motion in a direction intersecting with at least one suction and discharge gas unit of the first suction and discharge gas unit or the second suction and discharge gas unit. As mentioned above, discharge and suction of the gases can be completed through one unit, so a unit for gas discharge or suction does not need to be provided further, and the production rate of atomic layer deposition process can be improved.
Description
Technical field
The present invention relates to apparatus for atomic layer deposition, relate more specifically to not other to be set to form in chamber interior the device of vacuum, also can be before depositing operation and regulate the apparatus for atomic layer deposition of the operation pressure of chamber interior when technique.
Background technology
Conventionally, in the time manufacturing semiconductor element or panel display apparatus etc., need to pass through various manufacturing process, wherein, the technique that deposits required film on the substrate such as wafer or glass is absolutely necessary.
This thin film deposition processes mainly adopts sputtering method (Sputtering), chemical Vapor deposition process (CVD, Chemical Vapor Deposition), atomic layer deposition method (ALD, Atomic Layer Deposition) etc.
Wherein, ald (Atomic Layer Deposition) method is to utilize the chemisorption of monoatomic layer and the nano level film deposition techniques of desorb, separate each reactive material separately and supply with chamber with impulse form, thereby utilize reactive material saturated on the surface of substrate surface (surface saturation) reaction to carry out the film deposition techniques of the new ideas of chemisorption and desorb.
Existing technique for atomic layer deposition needs to keep vacuum state in deposition process, therefore, need to be used for the utility appliance safeguarding, manage this vacuum state, but the process time is elongated, thereby causes productivity to decline.
In addition, can realize the limited space of vacuum, so there is the problem that is not suitable for the display industry of pursuing big area, maximization.
Moreover, the apparatus for atomic layer deposition that prior art relates to, for the pressure of regulation and control reaction chamber inside, also needs other device except injecting the device of source gas, reactant gases, complicated thereby device becomes.
Summary of the invention
The invention provides a kind of apparatus for atomic layer deposition that can carry out discharge and the suction of gas in its single cell.
The invention provides a kind of gas suction unit that utilizes can the operation pressure of control chamber chamber interior and the apparatus for atomic layer deposition of basic pressure.
The invention provides a kind of apparatus for atomic layer deposition, it also can regulate the pressure of chamber interior or form vacuum without possess other vacuum exhaust means in order to form vacuum in chamber.
In order to solve described problem, the apparatus for atomic layer deposition that one embodiment of the invention relates to, comprising: chamber, forms the reaction compartment sealing in inside; The first gas suction unit, to being provided to the substrate of described chamber interior, supplies with or discharges the first gas; The second gas suction unit, supplies with or discharges the second gas for described substrate; Described substrate along with described the first gas suction unit or described the second gas suction unit in the length direction of at least one the gas suction unit direction of intersecting relatively move.
As mentioned above, can complete discharge and the suction work of gas by single gas suction unit, thereby not need the means of other discharges or suction gas, can improve the efficiency of atom layer deposition process.
Apparatus for atomic layer deposition also comprises: the first gas supply part, be connected to described the first gas suction unit, and supply with the first gas; The second gas supply part, is connected to described the second gas suction unit, supplies with the second gas; Vacuumize portion, be connected to described the first gas suction unit and the second gas suction unit, form vacuum in described chamber interior.
As mentioned above, do not need to form independent vacuum-lines, i.e. the operation pressure of adjustable chamber interior.
Described the first gas suction unit and the second gas suction unit, comprising: air-supply duct, is formed with therein for flow channel; Vapor pipe, is formed with therein with described and is communicated with pressure mitigation portion for flow channel; And air suction pipe, at least a portion of surrounding described vapor pipe periphery, thus form air-breathing runner in inside.
The internal volume of described pressure mitigation portion is greater than the described internal volume for flow channel.
Form at described air-supply duct the air feed port that at least one is connected with described the first gas supply part or described the second gas supply part.
Described air suction pipe can form at least one with described in the venting port that is connected of the portion of vacuumizing.
Described venting port is formed on the suction gas collection unit of described chamber and surrounds in sealing mode, described suction gas collection unit with described in the portion of vacuumizing be connected.
In addition, the apparatus for atomic layer deposition relating to according to one embodiment of the invention, comprising: chamber, forms the reaction compartment sealing therein; First outlet pipe, supplies with the first gas to being positioned at the substrate of described chamber interior; Second exhaust pipe, supplies with the second gas to described substrate; The direction that described substrate intersects along at least one length direction in described first outlet pipe, described second exhaust pipe or Vacuum exhaust tube relatively moves.
Described apparatus for atomic layer deposition, also comprises: the first gas supply part, is connected to described first outlet pipe, for supplying with the first gas; The second gas supply part, is connected to described second exhaust pipe, supplies with the second gas; Vacuumize portion, be connected to the vacuum port that is formed at described chamber, for forming vacuum or form vacuum between described first outlet pipe and second exhaust pipe in described chamber interior.
Described vacuum port is formed in described chamber, and between first outlet pipe and second exhaust pipe.
Described vacuum port is formed on the vacuum exhaust collection unit sealing of described chamber or surrounds.
Described first outlet pipe and second exhaust pipe comprise: air-supply duct, forms in inside and supply with runner; Vapor pipe main body, is formed with in inside and the described pressure mitigation portion being communicated with for flow channel; Exhaust portion, to be formed on described pressure mitigation portion with described for flow channel opposed mode.
The internal volume of described pressure mitigation portion is greater than the described internal volume for flow channel.
Described air-supply duct, is formed with at least one air feed port being communicated with described the first gas supply part or the second gas supply part.
Also comprise, be connected to described chamber, for form the chamber dry pump of vacuum in described chamber interior.
As described above, apparatus for atomic layer deposition of the present invention can improve output greatly, and is easy to realize maximization, thereby goes for field of display.
Apparatus for atomic layer deposition of the present invention, can utilize atmospheric plasma, UV-lamp and laser, thereby greatly improves deposition, also can realize the deposition of metallic film and nitrided film etc.
Apparatus for atomic layer deposition of the present invention, basic pressure or operation pressure before being easy to control depositing operation or when technique, after discharging depositing operation by gas suction unit to chamber outside, residual gas carrys out adjusting process pressure etc., thereby prevents the complexity of apparatus structure.
Apparatus for atomic layer deposition of the present invention, can utilize and possess the gas suction unit of pressure mitigation portion or utilize vapor pipe that gas is sprayed to substrate-side, thereby can realize the dispersion of gas uniform, therefore improves the quality of deposition.
Apparatus for atomic layer deposition of the present invention is set directly at chamber interior, does not therefore need other devices vacuumizing, and can regulate the pressure of chamber interior, thereby can realize the simplification of apparatus for atomic layer deposition structure, and improves the summary of safeguarding.
Effect of the present invention is not limited to above-mentioned effect, NM other effect, and those skilled in the art can clearly understand by record below.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that briefly shows the apparatus for atomic layer deposition that one embodiment of the invention relate to.
Fig. 2 is the stereographic map that the apparatus for atomic layer deposition inside of Fig. 1 is shown.
Fig. 3 is the stereographic map that the gas suction unit of the apparatus for atomic layer deposition that is applicable to Fig. 1 is shown.
Fig. 4 illustrates the gas suction unit transverse of Fig. 3 and longitudinal sectional view.
Fig. 5 is the schematic diagram that briefly shows the apparatus for atomic layer deposition that other embodiment of the present invention relate to.
Fig. 6 is stereographic map and the sectional view that the vapor pipe of the apparatus for atomic layer deposition that is applicable to Fig. 5 is shown.
Fig. 7 is the schematic diagram that briefly shows the apparatus for atomic layer deposition that other embodiment of the present invention relate to.
Fig. 8 is the sectional view that the gas injection pressure regulating unit that is connected in the gas suction unit of Fig. 3 and the vapor pipe of Fig. 6 is shown.
Fig. 9 is the schematic diagram that the variation of an apparatus for atomic layer deposition of Fig. 1 is shown.
Reference numeral
100,200,300,400: apparatus for atomic layer deposition
110,210,310,410: substrate
120,220,320: substrate temperature adjusting portion
130,140,330,340: gas suction unit
131,141,231,241: air-supply duct
132,142: air suction pipe
133,143: suction unit
134,144,230,240: vapor pipe
135,145,235,245: for flow channel
136,146,236,246: spray nozzle of the gas supply
137,147: exhaust portion
138,148,238,248: pressure mitigation portion
160,170,260,270,360,370: gas supply part
180,280,380: vacuumize portion
190: gas injection pressure regulating unit
201a, 301a: vacuum port
Embodiment
Below, the embodiment that present invention will be described in detail with reference to the accompanying relates to.But the present invention is not limited to embodiment.Same reference numerals shown in each accompanying drawing represents identical member.
Fig. 1 is the schematic diagram that briefly shows the apparatus for atomic layer deposition that one embodiment of the invention relate to, Fig. 2 is the stereographic map that the apparatus for atomic layer deposition inside of Fig. 1 is shown, Fig. 3 is the stereographic map that the gas suction unit of the apparatus for atomic layer deposition that is applicable to Fig. 1 is shown, Fig. 4 illustrates the gas suction unit transverse of Fig. 3 and longitudinal sectional view, Fig. 5 is the schematic diagram that briefly shows the apparatus for atomic layer deposition that other embodiment of the present invention relate to, Fig. 6 is stereographic map and the sectional view that the vapor pipe of the apparatus for atomic layer deposition of Fig. 5 is shown, Fig. 7 is the schematic diagram that briefly shows the apparatus for atomic layer deposition that other embodiment of the present invention relate to, Fig. 8 is the sectional view that the gas suction unit of Fig. 3 or the vapor pipe of Fig. 6 and connected gas injection pressure regulating unit are shown, Fig. 9 is the schematic diagram that the variation of the apparatus for atomic layer deposition of Fig. 1 is shown.
Referring to figs. 1 through Fig. 4, the apparatus for atomic layer deposition 100 that one embodiment of the invention relate to can comprise chamber 101, the first gas suction unit 130 and the second gas suction unit 140.This chamber 101 possesses: the reaction compartment that forms sealing therein; This first gas suction unit 130 is supplied with the first gas or is discharged the first gas (for example: source gas) from substrate 110 for the substrate 110 of described chamber 101 inside; This second gas suction unit 140 is supplied with the second gas or is discharged the second gas (for example: reactant gases) from described substrate 110 for described substrate 110.
At this, the direction TD that substrate 110 intersects along at least one length direction in the first gas suction unit 130 or the second gas suction unit 140 relatively moves.
As mentioned above, can complete discharge and the suction work of gas by single cell, thereby not need the means of other discharges or suction gas, can improve the productivity of atom layer deposition process.
The apparatus for atomic layer deposition 100 that one embodiment of the invention relate to can also comprise: multiple gas suctions unit 130,140, and on substrate 110 or surface deposition atomic shell (Atomic Layer) and discharge (injection) or suck (suction) source gas (Source Gas) or reactant gases (Reactant Gas).At this, the first gas can be any in source gas or reactant gases, and the second gas can be the another kind in source gas or reactant gases.In Fig. 1 and Fig. 2, source gas can be discharged/suck in the first gas suction unit 130, the second gas suction unit 140 discharge/sucting reaction gas.
At this, " exhaust " is to point to substrate 110 jet surfaces or ejection the first/the second gas, and " air-breathing " refers to that sucking (suction) from substrate 110 surfaces has neither part nor lot in the first/the second remaining gas of reaction and discharge to chamber 101 is outside.
According to Fig. 1, there is a first gas suction unit 130 and a second gas suction unit 140.At this, the quantity of the first/the second gas suction unit can also increase.In addition, the configuration of the first/the second gas suction unit and quantity, along with processing requirement, yield rate, output and produce various variations.
The apparatus for atomic layer deposition 100 of one embodiment of the invention, the chamber 101 that is formed reaction compartment therein seals, and is provided with substrate 110 and the first/the second gas suction unit 130,140 in chamber 101 inside.
Be arranged under the state of chamber 101 inside, under the state of fixing multiple the first/the second gas suction unit 130,140, transferring substrate 110 or under the state of fixing base 110, transfer multiple the first/the second gas suction unit 130,140 or substrate 110 is transferred together with gas suction unit 130,140.In the situation that transferring together with gas suction unit 130,140, moves round about by substrate 110.Therefore, no matter which kind of situation can allow substrate 110 and gas suction unit 130,140 relatively move mutually in.The direction TD that relatively moves as above is shown in Fig. 1 and Fig. 2.
Apparatus for atomic layer deposition 110 of the present invention, substrate 110 can relatively move to both direction with respect to the first/the second gas suction unit 130,140, therefore in the time processing large-area substrates, does not also need large working space.And by shortening the relative movement distance for the substrate 110 of the first/the second gas suction unit 130,140, can shorten track (foot print), be easy to process large-area substrate.
Apparatus for atomic layer deposition 100 also comprises that being connected to the first gas suction unit 130 supplies with the first gas supply part of the first gas (Source Line) 160; Be connected to the second gas suction unit and supply with the second gas supply part of the second gas (Reactant Line) 170; And be connected to the first gas suction unit and the second gas suction unit, form the portion that vacuumizes (Bar Dry Pump) 180 of vacuum in chamber interior.Preferably, the the first/the second gas supply part 160,170 and vacuumize portion 180 and be arranged on chamber outside, the first/the second gas supply part 160,170 can be connected with the first gas suction unit 130 and the second gas suction unit 140 with the second gas supply pipe road 171 by the first gas supply pipe road 161 respectively.Vacuumizing portion 181 can be connected with the first/the second gas suction unit 130,140 by valve tube.
As mentioned above, do not need to form independent vacuum-lines, can regulate the operation pressure of chamber interior yet.
In addition, as shown in Figure 1, apparatus for atomic layer deposition 100 also comprises the chamber dry pump 102 (Chamber Dry Pump) that is connected to chamber 101 and forms vacuum in chamber 101 inside.Chamber dry pump 102 is located at chamber 101 outsides, and is connected to chamber 101 by pump-line 103.Now, pump-line 103 can be connected to chamber 101, also can be connected to the residing side of the substrate 110 shown in Fig. 1.In order to be connected with pump-line 103, can form venting port 104 in substrate 110 bottoms.
The apparatus for atomic layer deposition 110 of one embodiment of the invention, before depositing operation starts, can pass through the action of chamber dry pump 102, in the inner vacuum that forms of chamber 101, and by chamber dry pump 102, chamber 101 inside are evacuated to basic pressure (base pressure, approximately 10
-3torr) vacuum or maintain normal pressure.
If depositing operation starts, chamber dry pump 102 stops action, supply with argon gas (Ar) or nitrogen (N2) by the purging portion being connected with chamber 101 by scavenging duct 186 (Purge Line) 185, depositing operation can regulate by vacuumizing portion 180 operation pressure (0.1～0.2torr) of chamber 101 inside.In addition, move together with chamber dry pump 102 by vacuumizing portion 180, form the pressure difference of chamber 101 inside, thereby improve the homogeneity (Uniformity) of discharging the gas of (injection) by gas suction unit 130,140, with jet flow stream equably.
Can remove chamber dry pump 102 and be replaced the function of chamber dry pump 102 by the first/the second gas suction unit 130,140.That is, by air-breathing (sucking suction) action of the first/the second gas suction unit 130,140, thus can be in inner basic pressure or the pressure difference of forming of its chamber 101.
Can substrate temperature adjusting portion 120 be set in substrate 110 bottoms.Substrate temperature adjusting portion 120 can raise or reduce the temperature at the substrate position of supplying with the first gas (source gas), because it is not the temperature for substrate 110 entirety, and only change the temperature of part substrate, thereby can prevent because of residual problems such as thermodiffusion that temperature variation causes, life-span minimizing, physical deformations.Substrate temperature adjusting portion 120 can be the form such as well heater (heater) or water cooler (cooling pad).
When substrate 110 moves from right side to left side along the direction TD that relatively moves and when deposition and atomic layer, the first gas suction unit 130 and the second gas suction unit 140 can configure successively from left to right.Move to the left on the surface of the substrate 110 therefore contacting with the first gas (source gas) along with elder generation, carry out successively the first gas (source gas) supply, vacuum exhaust, the second gas (reactant gases) is supplied with and vacuum exhaust, and can be at substrate surface deposition and atomic layer.
Be preferably, the gas suction unit 130,140 of the apparatus for atomic layer deposition 100 of one embodiment of the invention is along the direction TD that relatively moves, with identical distance or the configuration of maintenance prescribed distance.Consider in the needed time in each reaction process stage, and can regulate these spacing.
Be preferably, the least significant end of the first/the second gas suction unit 130,140 and substrate 110 surfaces, keep prescribed distance G.More specifically, gas suction unit 130,140 least significant ends should keep prescribed distance G with the surface of substrate 110.Preferential described spacing G is no more than 10～20mm.If spacing is less than 10～20mm, the low side of gas suction unit 130,140 contacts with the upper surface of substrate 110, or too near because of distance, and source gas or reactant gases may fully sucked by air suction pipe before supplying substrate, if be greater than 20mm, may reduce the efficiency of supply of gas.
But do not limit described spacing G and must not exceed 10～20mm.According to the formation of apparatus for atomic layer deposition, can change described spacing G, decide the scope of described spacing G according to the performance requriements of apparatus for atomic layer deposition 100.
Described the first/the second gas suction unit 130,140 can carry out at a unit exhaust (or injection) and air-breathing (or suction), also can carry out simultaneously.To describe gas suction unit 130,140 in detail with reference to accompanying drawing below.The first gas suction unit 130 and the second gas suction unit 140, the gaseous species difference of just discharging or sucking, its detailed structure is identical.
With reference to Fig. 3 and Fig. 4, the first gas suction unit 130 and the second gas suction unit 140 comprise: air-supply duct 131,141, is formed with in inside for flow channel 135,145; Vapor pipe 134,144, is formed with and the described pressure mitigation portion 138,148 being communicated with for flow channel 135,145 therein; Air suction pipe 132,142, surrounds described vapor pipe 134,144 periphery at least a portion, to form gas suction passage 139,149 in inside.
As mentioned above, can complete discharge and the suction of gas by a suction unit 130,140, thereby not need the independent means that there is discharge or suck gas can improve the productivity (throughput) of atom layer deposition process.
The air-supply duct 131,141 passing through from the gas of outside gas supply part 160,170, from air suction pipe 132,142 outstanding formation to outside.In contrast, vapor pipe 134,144 can be formed on air suction pipe 132,142 inside.As shown in Figure 1, air-supply duct 131,141 can be formed as, and gives prominence to or be positioned at the inside of suction gas collection unit 169,179 to the outside of chamber 101.
Take air suction pipe 132,142, during as benchmark, air-supply duct 131,141 can be formed on a contrary side of vapor pipe 134,144.
Preferably, the sectional dimension of air-supply duct 131,141 (diameter or area) is less than the sectional dimension of vapor pipe 134,144 and air suction pipe 132,142.Can form the confession flow channel 135,145 being communicated with along its length direction in the inside of air-supply duct 131,141.The top of air-supply duct 131,141 can form at least one air feed port 131a, 141a of being connected with the first gas supply part 160 or the second gas supply part 170.By air feed port 131a, 141a, gas supply pipe road 161,171 can be communicated with supplying flow channel 135,145.
Gas to gas supply pipe road 131,141 is supplied with, and is undertaken by air feed port 131a, 141a, and therefore the two ends of preferred gas suction unit 130,140 form blocked state.
Between air-supply duct 131,141 and vapor pipe 134,144, can form at least one spray nozzle of the gas supply 136,146 being communicated with for flow channel 135,145 and pressure mitigation portion 138,148.By spray nozzle of the gas supply 136,146, can make to be communicated with for flow channel 135,145 and pressure mitigation portion 138,148.
For flow channel 135,145, spray nozzle of the gas supply 136,146 and pressure mitigation portion 138,148 interconnect, but air-breathing runner 139,149 is not communicated with.Participate in for flow channel 135,145, spray nozzle of the gas supply 136,146 and pressure mitigation portion 138,148 part that gases are discharged, and air-breathing runner 139,149 is participated in the suction of gases.Therefore, can not interconnect.
The internal volume of pressure mitigation portion 138,148 is greater than the internal volume for flow channel 131,141.Pressure mitigation portion the 138, the 148th, by by a part of carrying out mobile runner for the gas of flow channel 135,145 and spray nozzle of the gas supply 136,146 inflows, can be enough to the part with larger relative volume stopping for the gas through not only narrow but also thin spray nozzle of the gas supply 136,146.Gas was by narrower spray nozzle of the gas supply 136,146 o'clock, and pressure will become greatly, and along with the larger pressure mitigation portion of packing volume or space 138,148 o'clock, the pressure of gas will diminish.The gas that air pressure diminishes along with stuffing pressure mitigation portion 138,148, to substrate 110 exhausts (injection), in this process, gas can be in the whole length of suction and discharge runner 130,140 emission gases equably.
Owing to first assembling gases in pressure mitigation portion 138,148, and then gas discharged to substrate 110, thereby pass through the pressure difference between substrate 110 and pressure mitigation portion 138,148, can be in the whole length of suction and discharge runner 130,140 jet flow stream equably.
Be specially, pressure mitigation portion the 138, the 148th, stops to reduce pressure when gas large pressure is accounted for, thus a part for the runner that can allow gas uniform and spray.Pressure mitigation portion 138,148 has the shape that cross section structure is expansion or expander, the existing tank shape scheduling as shown in the figure of its shape.
Can be formed with and at least one venting port 132a, 142a of vacuumizing portion 180 and being connected at air suction pipe 132,148. Venting port 132a, 142a are formed on the suction gas collection unit 169,179 of chamber 101 and surround in sealing mode, suck gas collection unit 169,179 can with vacuumize portion 180 and be connected.Venting port 132a, the 142a forming at air suction pipe 132,142 be a kind of by the first gas or the second gas to the outside port of discharging of chamber 101, its can with vacuumize portion 180 and be connected.Through the gas of venting port 132a, 142a, depart from gas suction unit 130,140 by vacuumizing portion 180, fill and suck 169, the 179 rear discharges of gas collection unit.According to circumstances different, can be without sucking gas collection unit 169,179, and be directly connected to venting port 132a, 142a by valve tube 181, with by the gas sucking to the outer discharge of chamber 101.
Fig. 4 (b) and (c) be the sectional view along the line of cut " A-A " of Fig. 4 (a).Fig. 4 (a) is according to the sectional view of gas suction unit 130,140 length directions of Fig. 3.
With reference to Fig. 4 (a), be formed with multiple spray nozzle of the gas supply 136,146, but can only form a spray nozzle of the gas supply 136,146.
As shown in Figure 1 and Figure 4, preferably venting port 132a, 142a are formed on the both sides during as benchmark take air-supply duct 131,141.But venting port 132a, 142a also can be formed on a certain side of air-supply duct 131,141.
In addition, be formed with at least one exhaust portion 137,147 at vapor pipe 134,144 along its length direction.Exhaust portion the 137, the 147th, relaxes stuffing pressure the gas of portion 138,148 to the outlet of the outside discharge of gas suction unit 130,140.For this reason, exhaust portion 137,147 has the shape that is communicated with outside and pressure mitigation portion 138,148.
Air-breathing runner 139,149 can be formed as, and space is separated by spray nozzle of the gas supply 136,146.As Fig. 4 (b) with (c), the air-breathing runner 139,149 forming between air suction pipe 132,142 and vapor pipe 134,144, is divided into two spaces by spray nozzle of the gas supply 136,146.Now, preferred air-breathing runner 139,149 is separated into symmetry by spray nozzle of the gas supply 136,146.
Vapor pipe 134,144 comprises exhaust guide part 137a, 147a, and this exhaust guide part 137a, 147a, towards the outside of vapor pipe 134,144, extend to form from exhaust portion 137,147.As shown in Figure 3 and Figure 4, exhaust guide part 134,144 extends and forms towards the downward direction at substrate 110 places, can be guided through the many as far as possible contact substrates 110 of gas of exhaust portion 137,147.
Exhaust guide part 137a, 147a, be formed on both sides in the mode of the virtual line symmetry for through spray nozzle of the gas supply 136,146 centers.It is larger that angle between exhaust guide part 137a, the 147a forming in both sides approaches bottom, thereby can be guided through the gas contact substrate 110 to greatest extent of exhaust guide part 137a, 147a.
At this, exhaust portion 137,147 is included at least one hole or the slit that between exhaust guide part 137a, 147a, form.
In the time that venting port 137,147 is formed as multiple hole, preferably according to pressure size or the pressure difference of each position in grate flow channel 138,148, adds the size of macropore at the little position of pressure or reduce the spacing between hole.In addition, in the time that venting port 137,147 is formed as a slit, according to pressure size or the pressure difference of each position in grate flow channel 138,148, strengthen the width of slit at the little position of pressure.
Between one end 133a, the 143a of air suction pipe 132,142 circumferential directions and one end of exhaust guide part 137a, 147a, form suction unit 133,143.Suction unit 133,143 is positioned at, along vapor pipe 134,144 and the circumferential direction of air suction pipe 132,142 and the position of exhaust portion symmetry.
One end 133a, the 143a that form air suction pipe 132,142 circumferential directions of suction unit 133,143, have the shape towards exhaust guide part 137a, 147a bending.
Referring to the apparatus for atomic layer deposition 200 of figure explanation other embodiment of the present invention.With reference to Fig. 5 and Fig. 6, the apparatus for atomic layer deposition 200 that relates to other embodiment of the present invention comprises: the chamber 201 that forms closed reaction space in inside; Supply with the first outlet pipe 230 of the first gas for the substrate 210 of chamber interior; And provide the second exhaust pipe 240 of the second gas for substrate 210.
Different from the apparatus for atomic layer deposition 100 shown in Fig. 1,240 of the first outlet pipe 230 of the apparatus for atomic layer deposition 200 shown in Fig. 5 and second exhaust pipes possess the function that provides gas tangentially to substrate, and do not possess the function that the first gas or the second gas is sucked and is expelled to chamber 201 outsides.
There is substrate 210, substrate temperature adjusting portion 220, the first and second vapor pipes 230,240, Vacuum exhaust tube 250 in chamber 201 inside.Wherein, preferably the upper end of first, second vapor pipe 230,240 is exposed to the outside of chamber 201.
Apparatus for atomic layer deposition 200 also can comprise: the first gas supply part 260, is connected to first outlet pipe 230 and supplies with the first gas; The second gas supply part 270, is connected in second exhaust pipe 240 and supplies with the second gas; Vacuumize portion 280, be connected to the vacuum port 210a that is formed at chamber, to form vacuum or form vacuum between first outlet pipe 230 and second exhaust pipe 240 in chamber 201 inside.At this, vacuumize portion 280 and be directly connected to chamber 210, and be not connected to first, second vapor pipe 230,240.
The first gas supply part 260 is connected to first outlet pipe 230 by the first gas supply pipe road 261; The second gas supply part 270 is connected to second exhaust pipe 240 by the second gas supply pipe road 271; Vacuumize 280, portion and be connected to chamber 201 by valve tube 281.
The first gas supply pipe road 261 and the second gas supply pipe road 271 respectively link with air feed port 231a, 241a that the upper end of first outlet pipe 230 and second exhaust pipe 240 forms, thereby can inject or withdrawing gas.The first gas supply pipe road 261 and the second gas supply pipe road 271 are directly connected to air feed port 231a, 241a, or as shown in Figure 5, can be connected to the suction gas collection unit 269,279 of surrounding and sealing air feed port 231a, 241a.
In the upper end of first outlet pipe 230 or second exhaust pipe 240, can form at least one air feed port 231a, 241a.
Fig. 6 is the stereographic map that first/second exhaust pipe 230,240 is shown, (b) of Fig. 6 is the sectional view that the line of cut " B – B " along (a) of Fig. 6 is shown.
As mentioned above, for first outlet pipe 230 and the second exhaust pipe 240 of the apparatus for atomic layer deposition of other embodiment of the present invention, be of similar shape.
In addition, as mentioned above, vacuumize portion 280 and be directly connected to chamber 201, and be not connected to first/second exhaust pipe 230,240.The apparatus for atomic layer deposition 200 of other embodiment of the present invention, does not arrange in chamber 201 inside and carries out the required independent device of vacuum exhaust, but moves in the direct mode of extracting vacuum out of chamber 201., form and the vacuum port 201a that vacuumizes portion 280 and be connected or be communicated with at chamber 201, one end of valve tube 281 is connected to vacuum port 201a for this reason, and the other end is connected to the portion of vacuumizing 280.
At this, vacuum port 201a is formed as being sealed or surrounding by the vacuum exhaust collection unit 289 of chamber 201a.In the time that vacuum exhaust gas collection portion 289 is installed on chamber 201, valve tube 281 is connected to vacuum exhaust collection unit 289, is discharged to chamber 201 outside expellant gas by vacuumizing the action of portion 280 after filled vacuum exhaust gas collection portion 289 again.Valve tube 281 also can be directly connected to vacuum port 201a, thereby gas is discharged to chamber 201 outsides, now without vacuum exhaust collection unit 289 is set.
With reference to Fig. 6, first outlet pipe 230 and second exhaust pipe 240 comprise: air-supply duct 231,241, and inside is formed with for flow channel 235,245; Vapor pipe main body 234,244, inside is formed with and the pressure mitigation portion 238,248 being communicated with for flow channel 235,245; Exhaust portion 237,247, to be formed on pressure mitigation portion 238,248 with supplying the opposed mode of flow channel.
Be communicated with by spray nozzle of the gas supply 236,246 with pressure mitigation portion 238,248 for flow channel 235,245, pressure mitigation portion 238,248 is communicated with the exhaust portion 237,247 of opening to substrate 210.Exhaust portion 237,247 can be formed between vapor pipe main body 234,244 shape all-in-one-piece exhaust guide part 237a, 247a.
The internal volume of the pressure mitigation portion 238,248 of first outlet pipe 230 and second exhaust pipe 240 is greater than the internal volume for flow channel 235,245.The pressure mitigation portion 238,248 of first, second vapor pipe 230,240 is identical with the pressure mitigation portion 138,148 of the apparatus for atomic layer deposition 100 of one embodiment of the invention, therefore no longer repeat specification.
At the air-supply duct 231,241 of first outlet pipe 230 and second exhaust pipe 240, can form at least one air feed port 231a, 241a of being connected with the first gas supply part 260 or the second gas supply part 270.Be preferably, air feed port 231a, 241a are formed on the top of air-supply duct, and the first gas supply pipe road 261 and the second gas supply pipe road 271 can directly be connected to air feed port 231a, 241a.
The apparatus for atomic layer deposition 200 of other embodiment of the present invention, supply with the first gas (source gas) and the second gas (reactant gases) is undertaken by first/second exhaust pipe 230,240 to substrate 210, suck the first/the first gas and undertaken by valve tube 281 or vacuum port 201a to chamber 201 outsides ejections.By valve tube 201a, not only can, by the first/the second gas residual after reaction to the outer discharge of chamber 201, can also regulate the pressure in chamber 201, can also between first outlet pipe 230 and second exhaust pipe 240, form vacuum.In addition, by vacuum port 201a is arranged between first outlet pipe 230 and second exhaust pipe 240, can stops between the first gas (source gas) and the second gas (reactant gases) and react.
The apparatus for atomic layer deposition 200 of other embodiment of the present invention, by vacuumizing the 280(Bar Dry Pump of portion), the operation pressure of chamber 201 inside can be controlled to 0.1～0.2torr.
The apparatus for atomic layer deposition 200 of other embodiment of the present invention, same with the apparatus for atomic layer deposition as shown in figure mono-, can further comprise and be connected to chamber 201 with the chamber dry pump in the inner formation vacuum of chamber 201.
Fig. 7 represents the apparatus for atomic layer deposition 300 of other embodiment of the present invention.Apparatus for atomic layer deposition 300 shown in Fig. 7, can arrange substrate 301, substrate temperature adjusting portion 320, the first gas suction unit 330 and the second gas suction unit 340 in chamber 301 inside.On chamber 301, can form vacuum port 301a, it is between the first gas suction unit 330 and the second gas suction unit 340.
The first gas supply part 360 that is arranged on chamber 301 outsides is connected to the first gas suction unit 330 by the first gas supply pipe road 361, the second gas supply part 370 is connected to the second gas suction unit 340 by the second gas supply pipe road 371, vacuumizes portion 380 and is connected to the first/the second gas suction unit 330,340 by the first valve tube 381.The structure of the first/the second gas suction unit 330,340, to vacuumize portion 380 identical with the apparatus for atomic layer deposition shown in Fig. 1 with the connection of the first/the second gas suction unit 330,340.The upper end of the first/the second gas suction unit 330,340 is inhaled into collection and confinement of gases portion 369,379 and surrounds with sealing means, and the first valve tube 381 is connected to and sucks gas collection unit 369,379.
On the other hand, the vacuum port 301a forming at chamber 301 by the second valve tube 382 with vacuumize portion 380 and be connected.The second valve tube 382 is directly connected to vacuum port 301a, or is connected to the vacuum exhaust collection unit 389 of wrapped vacuum mouth 301a.
Apparatus for atomic layer deposition as shown in Figure 7, mixes the mode of the apparatus for atomic layer deposition 200 shown in the apparatus for atomic layer deposition shown in Fig. 1 100 and Fig. 5, thereby can or gas be drawn to chamber 301 outsides in the interior formation vacuum of chamber 301.
Apparatus for atomic layer deposition 300 also comprises the chamber dry pump (Chamber Dry Pump) 302 that is connected to chamber 301 and forms vacuum in chamber 301 inside.Chamber dry pump 302 can be connected to chamber 301 by exhaust pipe 303.Now, exhaust pipe 303 can be connected to chamber 301, or also can be connected to the residing side of substrate 310.In order to be connected with exhaust pipe 303, can form venting port 304 in the bottom of chamber 301 or substrate 310.
Fig. 8 is gas suction unit 130,140,330,340 or the gas outlet pipe 230,240 of apparatus for atomic layer deposition 200 and the sectional view of connected gas injection pressure regulating unit 190 of the apparatus for atomic layer deposition 100,300 that illustrates that one embodiment of the invention relate to.
Gas injection pressure regulating unit 190 can adjustments of gas flow and pressure, thereby in the whole length of gas suction unit 130,140,330,340 or vapor pipe 230,240, can spray the first/the second gas to substrate 110,210,310 equably with identical pressure.
In gas injection pressure regulating unit 190, gas flow control part 191, air supply valve 192 and air feed take-off pipe 193,194,195 form one group.The quantity of this group, becomes many along with the length length of side of suction unit 130,140.Although not shown, can form multiple gas injection pressure regulating units 190 according to the length of gas suction unit 130,140.For example, can in the whole length of gas suction unit 130,140, form three gas injection pressure regulating units 190.Along the length direction of gas suction unit 130,140, can be on right side, centre and left side, respectively form a gas injection pressure regulating unit 190.The in the situation that of elongated in gas suction unit 130,140, multiple gas injection pressure regulating units 190 are set, and make gas multi-stage diffluence by gas flow control part 191, pressure on can the whole length of adjustments of gas suction unit 130,140, thus uniformity coefficient (uniformity) can be improved.
Gas injection pressure regulating unit 190 is connected to for flow channel 135,145,235,245 supply gas, makes the spraying pressure of vapor pipe 134,144,230,240 Exhaust Gas even in the whole length of gas suction unit 130,140,330,340 or vapor pipe 230,240.
Gas injection pressure regulating unit 190 comprises: gas flow control part 191, is connected with gas supply part 160,170,260,270,360,370, for being adjusted in the flow of the gas that gas supply part 160,170,260,270,360,370 supplies with; Air supply valve 192, be connected to gas flow control part 191, can control the supply of gas; Air feed take-off pipe 193,194,195, is connected to air supply valve 192 and supplies between flow channel 135,145,235,245, to supplying flow channel 135,145,235,245 supply gas.
Gas flow control part 191 is to be connected to gas supply part 160,170,260,270,360,370 by gas supply pipe road 161,171,261,271, can regulate the mass flow controller (Mass Flow Controller:MFC) of the flow (Mass Flow) of supply gas.
The air supply valve 192 that is connected to gas flow control part 191 is a kind of switch on and off, for stoping or allowing the gas of supplying with to be injected into gas suction unit 130,140,330,340 or vapor pipe 230,240, can realize with the form of valve.Air supply valve 192 ejects the dividing potential drop (partial pressure) of gas by adjusting, thereby improves the homogeneity of jet flow stream.
Air feed take-off pipe 193,194,195 can be formed as multistage towards gas suction unit 130,140,330,340 or vapor pipe 230,240 from air supply valve 192.Fig. 8 example represents that air feed take-off pipe 193,194,195 is divided into three grades to inferior division.As noted above, from top to bottom, form more multistage air feed take-off pipe 193,194,195, thereby by controlling a gas input point (being gas flow control part), can adjustments of gas output point 195(the 3rd air feed take-off pipe) flow and gaseous tension etc., also can pass through the quantity of enlargement gas output point, thus can be with uniform pressure injection gas in the entire length of gas suction unit 130,140,330,340 or vapor pipe 230,240.
Air feed take-off pipe 193,194,195 possesses: be connected to the input aperture 193a of air supply valve 192 and be connected to the delivery port 195a for flow channel 135,145,235,245, the quantity of input aperture 193a can be less than the quantity of delivery port 195a.That is, multistage by air feed take-off pipe 193,194,195 is formed as, can form multiple delivery port 195a, thus can be with uniform pressure injection gas in the whole length of gas suction unit 130,140,330,340 or vapor pipe 230,240.
Fig. 9 illustrates the variation of the apparatus for atomic layer deposition of Fig. 1.Apparatus for atomic layer deposition 300 shown in Fig. 9 comprises: atmospheric plasma producer 340, Vacuum exhaust tube 350, the first gas (source gas) suction unit 330 and halogen lamp 990.Now, when substrate 310 relatively moves from left side to the right with respect to gas suction unit 330, carry out depositing operation.
Apparatus for atomic layer deposition 400 shown in Fig. 9 can deposit atomic shell under normal pressure, during therefore to substrate 410 supply response gas, can use atmospheric plasma producer 440.Atmospheric plasma producer 440 is specially low-temperature plasma spray gun body (cold plasma torch).Atmospheric plasma producer 440 supply response gases, while therefore using atmospheric plasma producer 440, can omit the second gas (reactant gases) suction unit 140,340.
To the heating of substrate 410, not only can utilize halogen lamp 490, can also utilize laser, UV-lamp etc.Halogen lamp 490 can comprise: thermal source 493; Shell 491, at this thermal source 493 of thermal source 493 outer wrap; Multiple cooling ends 492, are formed on shell 491 inside.The cooling end 492 of halogen lamp 490 can prevent that the part outside substrate 410 surfaces is heated, thereby can prevent the rising of substrate 410 bulk temperatures.
As mentioned above, be illustrated with the specific items such as concrete integrant and specific embodiment and accompanying drawing in one embodiment of this invention, this is only for understanding on the whole the present invention, the present invention is not limited to described embodiment, for general technical staff of the technical field of the invention, can carry out numerous variations and distortion from these records.Therefore, thought of the present invention is not limited to the embodiment describing, and protection scope of the present invention is not only with claims, is equal to or distortion of equal value all belongs in thought category of the present invention with it.
Claims (15)
1. an apparatus for atomic layer deposition, it comprises:
Chamber, forms the reaction compartment sealing in inside;
The first gas suction unit, to being provided to the substrate of described chamber interior, supplies with or discharges the first gas; And
The second gas suction unit, supplies with the second gas or discharges the second gas described substrate;
Described substrate along with described the first gas suction unit or described the second gas suction unit in the length direction of at least one the gas suction unit direction of intersecting relatively move.
2. apparatus for atomic layer deposition according to claim 1, is characterized in that, also comprises:
The first gas supply part, is connected to described the first gas suction unit, supplies with the first gas;
The second gas supply part, is connected to described the second gas suction unit, supplies with the second gas;
Vacuumize portion, be connected to described the first gas suction unit and described the second gas suction unit, for forming vacuum in described chamber interior.
3. apparatus for atomic layer deposition according to claim 2, is characterized in that, described the first gas suction unit and the second gas suction unit comprise:
Air-supply duct, is formed with in inside for flow channel;
Vapor pipe, is formed with in inside and the described pressure mitigation portion being communicated with for flow channel; And
Air suction pipe, at least a portion of surrounding the periphery of described vapor pipe, to form air-breathing runner in inside.
4. apparatus for atomic layer deposition according to claim 3, is characterized in that,
The internal volume of described pressure mitigation portion is greater than the described internal volume for flow channel.
5. apparatus for atomic layer deposition according to claim 3, is characterized in that,
Be formed with at least one air feed port being connected with described the first gas supply part or the second gas supply part at described air-supply duct.
6. apparatus for atomic layer deposition as claimed in claim 5, is characterized in that,
Be formed with at least one venting port being connected with the described portion of vacuumizing at described air suction pipe.
7. apparatus for atomic layer deposition as claimed in claim 6, is characterized in that,
Described venting port is formed on the suction gas collection unit of described chamber and surrounds in sealing mode,
Described suction gas collection unit with described in the portion of vacuumizing be connected.
8. an apparatus for atomic layer deposition, it comprises:
Chamber, forms the reaction compartment sealing in inside;
First outlet pipe, supplies with the first gas to being positioned at the substrate of described chamber interior; And
Second exhaust pipe, supplies with the second gas to described substrate;
The direction that described substrate intersects along at least one the length direction in described first outlet pipe, described second exhaust pipe or Vacuum exhaust tube relatively moves.
9. apparatus for atomic layer deposition as claimed in claim 8, also comprises:
The first gas supply part, is connected to described first outlet pipe, supplies with the first gas;
The second gas supply part, is connected to described second exhaust pipe, supplies with the second gas; And
Vacuumize portion, be connected to the vacuum port that is formed at described chamber, for forming vacuum or form vacuum between described first outlet pipe and described second exhaust pipe in described chamber interior.
10. apparatus for atomic layer deposition as claimed in claim 9, is characterized in that,
Described vacuum port is formed on described chamber in the mode between described first outlet pipe and described second exhaust pipe.
11. apparatus for atomic layer deposition as claimed in claim 10, is characterized in that,
Described vacuum port is formed on the vacuum exhaust collection unit of described chamber and surrounds in sealing mode.
12. apparatus for atomic layer deposition as claimed in claim 9, is characterized in that, described first outlet pipe and described second exhaust pipe comprise:
Air-supply duct, is formed with in inside for flow channel;
Vapor pipe main body, is formed with in inside and the described pressure mitigation portion being communicated with for flow channel; And
Exhaust portion, to be formed on described pressure mitigation portion with described for flow channel opposed mode.
13. apparatus for atomic layer deposition as claimed in claim 12, is characterized in that,
The internal volume of described pressure mitigation portion is greater than the described internal volume for flow channel.
14. apparatus for atomic layer deposition as claimed in claim 12, is characterized in that,
Be formed with at least one air feed port being connected with described the first gas supply part or described the second gas supply part at described air-supply duct.
15. apparatus for atomic layer deposition as described in any one in claim 1 to 14, is characterized in that, also comprise;
Chamber dry pump, described chamber dry pump is connected to described chamber, for forming vacuum in chamber interior.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120145240A KR101538372B1 (en) | 2012-12-13 | 2012-12-13 | atomic layer deposition apparatus |
| KR10-2012-0145240 | 2012-12-13 |
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| CN103866293A true CN103866293A (en) | 2014-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310683377.7A Pending CN103866293A (en) | 2012-12-13 | 2013-12-12 | Atomic layer deposition device |
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| KR (1) | KR101538372B1 (en) |
| CN (1) | CN103866293A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109750274A (en) * | 2017-11-01 | 2019-05-14 | 长鑫存储技术有限公司 | Semiconductor production equipment and semiconductor process method |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101939278B1 (en) * | 2016-08-09 | 2019-01-18 | 에이피시스템 주식회사 | Apparatus for depositing thin film |
| CN106350784A (en) * | 2016-10-10 | 2017-01-25 | 无锡宏纳科技有限公司 | Double-row gas guide type low-pressure chemical gas-phase precipitation cavity |
| KR101887191B1 (en) * | 2016-10-25 | 2018-08-10 | 주식회사 엔씨디 | A roll-to-roll type apparatus for depositing a atomic layer |
| US10964533B2 (en) * | 2018-12-21 | 2021-03-30 | Applied Materials, Inc. | ALD process and hardware with improved purge efficiency |
| KR102452714B1 (en) * | 2021-12-23 | 2022-10-07 | 주식회사 에이치피에스피 | Chamber apparatus for both high pressure and vacuum process |
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| CN1671882A (en) * | 2002-07-29 | 2005-09-21 | 微米技术有限公司 | Atomic layer deposition method |
| KR20100096022A (en) * | 2009-02-23 | 2010-09-01 | 시너스 테크놀리지, 인코포레이티드 | Method for forming thin film using radicals generated by plasma |
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| CN101360846B (en) * | 2006-03-24 | 2012-09-05 | 三菱重工业株式会社 | Electrode and vacuum processing apparatus |
| US8771791B2 (en) * | 2010-10-18 | 2014-07-08 | Veeco Ald Inc. | Deposition of layer using depositing apparatus with reciprocating susceptor |
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| CN1671882A (en) * | 2002-07-29 | 2005-09-21 | 微米技术有限公司 | Atomic layer deposition method |
| KR20100096022A (en) * | 2009-02-23 | 2010-09-01 | 시너스 테크놀리지, 인코포레이티드 | Method for forming thin film using radicals generated by plasma |
| US20120225203A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
| WO2012134070A2 (en) * | 2011-03-31 | 2012-10-04 | 한양대학교 산학협력단 | Gas-injection apparatus, atomic layer deposition apparatus, and atomic layer deposition method using the apparatus |
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| CN109750274A (en) * | 2017-11-01 | 2019-05-14 | 长鑫存储技术有限公司 | Semiconductor production equipment and semiconductor process method |
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| KR101538372B1 (en) | 2015-07-22 |
| KR20140076796A (en) | 2014-06-23 |
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