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CN103811643A - A kind of manufacturing method of LED light source for optical displacement sensor - Google Patents

A kind of manufacturing method of LED light source for optical displacement sensor Download PDF

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Publication number
CN103811643A
CN103811643A CN201210453807.1A CN201210453807A CN103811643A CN 103811643 A CN103811643 A CN 103811643A CN 201210453807 A CN201210453807 A CN 201210453807A CN 103811643 A CN103811643 A CN 103811643A
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light source
optical displacement
displacement sensor
led light
led
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王东辉
吴胜利
张超
郭昕
包艳
刘震
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China Aviation Industry Institute No 618
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China Aviation Industry Institute No 618
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • H10H20/8513Wavelength conversion materials having two or more wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means

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Abstract

The invention belongs to the field of aviation automatic control, and relates to a manufacturing method of an LED light source for an optical displacement sensor. The invention discloses a method for broadening a spectrum of an LED applied to a light source of an optical displacement sensor. According to the method, a certain proportion of red fluorescent powder is doped into the LED light source packaging fluorescent powder, so that the spectral performance is improved, the LED light source can be applied to the whole working wavelength range of the optical sensor, and the method is an ideal miniaturized light source of the optical displacement sensor. Compared with a halogen tungsten lamp, the broadband LED has the characteristics of low cost, low energy consumption, no pollution and the like, meets the miniaturization development requirement of the optical displacement sensor, and is an ideal light source for future research of the optical displacement sensor.

Description

一种光位移传感器用LED光源的制作方法A kind of manufacturing method of LED light source for optical displacement sensor

技术领域technical field

本发明属于航空自动控制领域,涉及一种光位移传感器用LED光源的制作方法。The invention belongs to the field of aviation automatic control and relates to a method for manufacturing an LED light source for an optical displacement sensor.

背景技术Background technique

光位移传感器是一种新型的位移测量器件,具有抗电磁干扰、防腐蚀、精度高等特点,是未来光传飞控系统的研究热点之一。光位移传感器由宽带光源、传感器和波长解调三部分组成,光源作为光位移传感器的重要组成部分,其光谱范围、光谱能量决定了光位移传感器的工作范围及传感精度。理想的光位移传感器光源光谱应覆盖可见光至近红外波段并具有较高的光谱能量和稳定性,目前已采用的卤钨灯光源已满足光位移传感器光源性能要求,具有宽光谱范围和较强的光谱能量,但卤钨灯本身也存在体积大、能耗高等缺点。The optical displacement sensor is a new type of displacement measurement device, which has the characteristics of anti-electromagnetic interference, anti-corrosion, and high precision. It is one of the research hotspots in the future optical transmission flight control system. The optical displacement sensor is composed of broadband light source, sensor and wavelength demodulator. The light source is an important part of the optical displacement sensor. Its spectral range and spectral energy determine the working range and sensing accuracy of the optical displacement sensor. The ideal light source spectrum for optical displacement sensors should cover the visible light to near-infrared bands and have high spectral energy and stability. The tungsten halogen light source that has been used so far has met the performance requirements of the optical displacement sensor light source, and has a wide spectral range and a strong spectrum. Energy, but the halogen tungsten lamp itself also has the disadvantages of large volume and high energy consumption.

随着光位移传感器的深入研究,光位移传感器小型化、集成化将是未来研究的主要方向,寻找一种体积小、成本低、性能好的光源替代卤钨灯则是光位移传感器光源的研究目标。功率型LED是未来半导体照明的主流技术,其小型化、高效率等特点满足光位移传感器光源小型化研究的需要,但该类LED在红光波段光谱能量不足导致光位移传感器在长波段不能正常工作,限制了其在光位移传感器中的应用。With the in-depth research on optical displacement sensors, the miniaturization and integration of optical displacement sensors will be the main direction of future research. Finding a light source with small size, low cost and good performance to replace tungsten halogen lamps is the research on the light source of optical displacement sensors. Target. Power LED is the mainstream technology of semiconductor lighting in the future. Its miniaturization and high efficiency meet the needs of research on the miniaturization of the light source of the optical displacement sensor. However, the insufficient spectral energy of this type of LED in the red band causes the optical displacement sensor to fail to work normally in the long wavelength band. work, which limits its application in optical displacement sensors.

发明内容Contents of the invention

本发明的目的是提供一种光位移传感器用LED光源的制作方法,提升LED的红光光谱能量,使LED光源满足光位移传感器性能要求,以实现光位移传感器光源小型化。The purpose of the present invention is to provide a manufacturing method of an LED light source for an optical displacement sensor, which improves the red light spectrum energy of the LED, and makes the LED light source meet the performance requirements of the optical displacement sensor, so as to realize the miniaturization of the light source of the optical displacement sensor.

本发明采取的技术方案为:一种光位移传感器用LED光源的制作方法,包括以下步骤:The technical solution adopted by the present invention is: a method for manufacturing an LED light source for an optical displacement sensor, comprising the following steps:

步骤一、制作倒装LED芯片,所述倒装LED芯片至上往下包括蓝宝石衬底1、GaN外延层2、TiNiAg金属层3、铟层4;Step 1, making a flip-chip LED chip, which includes a sapphire substrate 1, a GaN epitaxial layer 2, a TiNiAg metal layer 3, and an indium layer 4 from top to bottom;

步骤二、制作硅基板;包含金球5、铟层4、TiNiAg金属层3、Si板6;Step 2, making a silicon substrate; including a gold ball 5, an indium layer 4, a TiNiAg metal layer 3, and a Si plate 6;

步骤三、倒装焊:对倒装LED芯片、硅基板及热沉8进行焊接和电极的键合;Step 3, flip-chip welding: welding and bonding electrodes to the flip-chip LED chip, silicon substrate and heat sink 8;

步骤四、配粉:在黄色荧光粉中掺入10%-30%的红色荧光粉,形成混合荧光粉;Step 4, powder mixing: mix 10%-30% red phosphor into the yellow phosphor to form a mixed phosphor;

步骤五、制作荧光胶11:将混合荧光粉与灌封胶混合均匀;Step 5, making fluorescent glue 11: mix the mixed phosphor powder and potting glue evenly;

步骤六、灌封和固化:盖上球形透镜10,通过透镜上的灌封孔进行荧光胶的灌封,然后对荧光胶进行固化。Step 6. Potting and curing: cover the spherical lens 10, fill the fluorescent glue through the potting hole on the lens, and then cure the fluorescent glue.

优选地,所述红色荧光粉为氮氧化物荧光粉。Preferably, the red phosphor is nitrogen oxide phosphor.

本发明具有的优点和有益效果:本发明是一种实现LED应用于光位移传感器光源的光谱展宽方法。该方法在LED光源封装荧光粉中掺入了一定比列的红色荧光粉,改善了光谱性能,使得LED光源可以应用于整个光传感器工作波长范围,是一种理想的光位移传感器小型化光源。该宽带LED相对于卤钨灯具有低成本、低能耗、无污染、等特性并且满足光位移传感器小型化发展需求,是光位移传感器未来研究的理想光源。The advantages and beneficial effects of the present invention: the present invention is a method for widening the spectrum of LEDs applied to optical displacement sensor light sources. In this method, a certain proportion of red phosphor powder is mixed into the LED light source packaging phosphor powder, which improves the spectral performance and makes the LED light source applicable to the entire working wavelength range of the optical sensor. It is an ideal light source for the miniaturization of the optical displacement sensor. Compared with halogen tungsten lamps, this broadband LED has the characteristics of low cost, low energy consumption, no pollution, etc. and meets the miniaturization development needs of optical displacement sensors. It is an ideal light source for future research on optical displacement sensors.

附图说明Description of drawings

图1是LED封装结构图,其中,1:蓝宝石,2:GaN外延层,3:金属层,4:铟层,5:金球,6:Si板,7:锡层,8:热沉,9:金线,10:球形透镜,11:荧光胶;Figure 1 is a structural diagram of the LED package, where 1: sapphire, 2: GaN epitaxial layer, 3: metal layer, 4: indium layer, 5: gold ball, 6: Si board, 7: tin layer, 8: heat sink, 9: gold wire, 10: spherical lens, 11: fluorescent glue;

图2是本发明方法流程示意图;Fig. 2 is a schematic flow sheet of the method of the present invention;

图3是照明用LED与掺杂红粉的宽带LED光谱对比图,光谱测量范围为600-800nm;Figure 3 is a comparison chart of the spectrum of LEDs for lighting and broadband LEDs doped with red powder, and the spectrum measurement range is 600-800nm;

图4是普通照明LED及该宽带LED应用于光位移传感器位移传感得到的位移传感结果的比较。Fig. 4 is a comparison of the displacement sensing results obtained by the general lighting LED and the broadband LED applied to the displacement sensing of the optical displacement sensor.

表1是光位移传感器用1W宽带LED光源的发光指标。Table 1 is the luminous index of 1W broadband LED light source for optical displacement sensor.

具体实施方式Detailed ways

下面结合附图及实例对本发明做进一步详细描述,请参阅图1至图4。一种光位移传感器用LED光源的制作方法,包括以下步骤:The present invention will be further described in detail below with reference to the accompanying drawings and examples, please refer to FIG. 1 to FIG. 4 . A method for manufacturing an LED light source for an optical displacement sensor, comprising the following steps:

步骤一、制作倒装LED芯片:制作倒装LED芯片,所述倒装LED芯片至上往下包括蓝宝石衬底1、GaN外延层2、TiNiAg金属层3、铟层4;选取1W大功率LED 芯片,采用蓝宝石衬底、背面出光,制作TiNiAg金属层并通过蒸发铟、光刻技术制作铟层,最后完成划片;Step 1. Make a flip-chip LED chip: Make a flip-chip LED chip, which includes a sapphire substrate 1, a GaN epitaxial layer 2, a TiNiAg metal layer 3, and an indium layer 4 from top to bottom; select a 1W high-power LED chip , using a sapphire substrate and backside light emitting, making a TiNiAg metal layer and making an indium layer by evaporating indium and photolithography technology, and finally completing scribing;

步骤二、制作硅基板:包含金球5、铟层4、TiNiAg金属层3、Si板6;采用ESD防护技术,在Si板表面制作TiNiAg金属层3及铟层4,最后在铟层4上用金丝球焊机种金球并划片。以上两步骤制作出多个有ESD保护电路、凸点和键合电极的硅基芯片。Step 2, making silicon substrate: including gold ball 5, indium layer 4, TiNiAg metal layer 3, Si board 6; using ESD protection technology, making TiNiAg metal layer 3 and indium layer 4 on the surface of Si board, and finally on the indium layer 4 Gold balls were planted with a gold wire ball bonder and diced. The above two steps produce a plurality of silicon-based chips with ESD protection circuits, bumps and bonding electrodes.

步骤三、倒装焊:对准倒装LED芯片和硅基板进行键合,利用焊料锡对硅基芯片和Al热沉进行焊接,键合硅基板和Al基板电极;Step 3. Flip-chip welding: align the flip-chip LED chip and the silicon substrate for bonding, use solder tin to weld the silicon-based chip and the Al heat sink, and bond the silicon substrate and the Al substrate electrode;

步骤四、配粉:在黄色荧光粉中掺入10%-30%的红色荧光粉,形成混合荧光粉,所添加的红色荧光粉为氮氧化物荧光粉,其他体系荧光粉同样也适用,ZnO基体系、石榴石体系的红色荧光粉。Step 4. Mixing powder: Add 10%-30% red phosphor to the yellow phosphor to form a mixed phosphor. The added red phosphor is nitrogen oxide phosphor, and other system phosphors are also applicable, ZnO The red phosphor powder of base system and garnet system.

步骤五、制作荧光胶:将混合荧光粉与灌封胶按一定比例均匀混合,灌封胶采用硅胶。Step 5, making fluorescent glue: uniformly mix the mixed phosphor powder and potting glue in a certain proportion, and the potting glue is made of silica gel.

步骤六、灌封和固化:盖上球形透镜,通过透镜上的灌封孔进行荧光胶的灌封,然后对荧光胶进行固化。Step 6. Potting and curing: cover the spherical lens, fill the fluorescent glue through the potting hole on the lens, and then cure the fluorescent glue.

图2为以上步骤的流程图,该方法得到的宽带LED较原照明用LED光谱在长波段有明显的展宽,图3为两LED光谱分布图。表1是3批该宽带LED的发光性能指标,较低的色温表明红光成分的增加,同时也保证了较高的光效。Figure 2 is a flow chart of the above steps. Compared with the original lighting LED spectrum, the broadband LED obtained by this method has obvious broadening in the long-wave band, and Figure 3 is a spectrum distribution diagram of two LEDs. Table 1 shows the luminous performance indicators of three batches of the broadband LEDs. The lower color temperature indicates the increase of the red light component, and also ensures a higher luminous efficacy.

表1Table 1

Figure BDA00002391320800031
Figure BDA00002391320800031

掺入红粉的宽带LED光源在红光光谱范围光谱能量的增强,使得光位移传感器在长波段表现出较好的性能,相对于普通照明用LED光源有明显改善。图4是两类LED光源的位移传感结果对比。可以看到,普通照明LED后端由于光谱能量较弱,影响到了传感器全量程的线性度,宽带LED光源的光位移传感器则表现出良好的位移传感线性度,在光位移传感器应用方面具有很大的改进。The enhancement of spectral energy in the red spectral range of the broadband LED light source mixed with red powder makes the optical displacement sensor show better performance in the long-wave band, which is significantly improved compared with the LED light source for general lighting. Figure 4 is a comparison of the displacement sensing results of two types of LED light sources. It can be seen that due to the weak spectral energy at the back end of the general lighting LED, the linearity of the full range of the sensor is affected, and the optical displacement sensor of the broadband LED light source shows good displacement sensing linearity, which has great potential in the application of optical displacement sensors. Big improvement.

Claims (2)

1. a manufacture method for LED light source for Optical displacement sensor, comprises the following steps:
Step 1, making flip LED chips, supreme Sapphire Substrate [1], GaN epitaxial loayer [2], TiNiAg metal level [3], the indium layer [4] of down comprising of described flip LED chips;
Step 2, making silicon substrate; Comprise gold goal [5], indium layer [4], TiNiAg metal level [3], Si plate [6];
Step 3, flip chip bonding: flip LED chips, silicon substrate and heat sink [8] are welded and the bonding of electrode;
It is characterized in that, further comprising the steps of:
Step 4, join powder: in yellow fluorescent powder, mix the red fluorescence powder of 10%-30%, form mixed fluorescent powder;
Step 5, making fluorescent glue [11]: mixed fluorescent powder is mixed with casting glue;
Step 6, embedding and curing: cover sphere lens [10], the embedding of fluorescent glue is carried out in the embedding hole on scioptics, then fluorescent glue is cured.
2. the manufacture method of LED light source for a kind of Optical displacement sensor according to claim 1, is characterized in that, described red fluorescence powder is nitric oxide fluorescent powder.
CN201210453807.1A 2012-11-12 2012-11-12 A kind of manufacturing method of LED light source for optical displacement sensor Pending CN103811643A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108417683A (en) * 2018-01-22 2018-08-17 东莞中之光电股份有限公司 A packaging method for flip-chip LED automotive lamps

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1971952A (en) * 2006-11-15 2007-05-30 重庆邮电大学 Converse welding method of high power LED chip
US20090289546A1 (en) * 2008-05-21 2009-11-26 Sony Corporation Phosphor and method for manufacturing the same, and light-emitting device and display device using phosphor
CN102130115A (en) * 2010-01-18 2011-07-20 海洋王照明科技股份有限公司 White LED (light emitting diode) planar light source device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1971952A (en) * 2006-11-15 2007-05-30 重庆邮电大学 Converse welding method of high power LED chip
US20090289546A1 (en) * 2008-05-21 2009-11-26 Sony Corporation Phosphor and method for manufacturing the same, and light-emitting device and display device using phosphor
CN102130115A (en) * 2010-01-18 2011-07-20 海洋王照明科技股份有限公司 White LED (light emitting diode) planar light source device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108417683A (en) * 2018-01-22 2018-08-17 东莞中之光电股份有限公司 A packaging method for flip-chip LED automotive lamps

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Application publication date: 20140521