CN103811643A - A kind of manufacturing method of LED light source for optical displacement sensor - Google Patents
A kind of manufacturing method of LED light source for optical displacement sensor Download PDFInfo
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- 238000006073 displacement reaction Methods 0.000 title claims abstract description 40
- 230000003287 optical effect Effects 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000843 powder Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000003292 glue Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical group O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 2
- 238000005266 casting Methods 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 abstract description 10
- 238000001228 spectrum Methods 0.000 abstract description 9
- 229910052736 halogen Inorganic materials 0.000 abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 abstract description 5
- 239000010937 tungsten Substances 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 150000002367 halogens Chemical class 0.000 abstract description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 238000004382 potting Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- SBFDPWWVJYLRGG-UHFFFAOYSA-N [N]=O.[P] Chemical group [N]=O.[P] SBFDPWWVJYLRGG-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- -1 tungsten halogen Chemical class 0.000 description 2
- RZVHIXYEVGDQDX-UHFFFAOYSA-N 9,10-anthraquinone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 RZVHIXYEVGDQDX-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
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Abstract
Description
技术领域technical field
本发明属于航空自动控制领域,涉及一种光位移传感器用LED光源的制作方法。The invention belongs to the field of aviation automatic control and relates to a method for manufacturing an LED light source for an optical displacement sensor.
背景技术Background technique
光位移传感器是一种新型的位移测量器件,具有抗电磁干扰、防腐蚀、精度高等特点,是未来光传飞控系统的研究热点之一。光位移传感器由宽带光源、传感器和波长解调三部分组成,光源作为光位移传感器的重要组成部分,其光谱范围、光谱能量决定了光位移传感器的工作范围及传感精度。理想的光位移传感器光源光谱应覆盖可见光至近红外波段并具有较高的光谱能量和稳定性,目前已采用的卤钨灯光源已满足光位移传感器光源性能要求,具有宽光谱范围和较强的光谱能量,但卤钨灯本身也存在体积大、能耗高等缺点。The optical displacement sensor is a new type of displacement measurement device, which has the characteristics of anti-electromagnetic interference, anti-corrosion, and high precision. It is one of the research hotspots in the future optical transmission flight control system. The optical displacement sensor is composed of broadband light source, sensor and wavelength demodulator. The light source is an important part of the optical displacement sensor. Its spectral range and spectral energy determine the working range and sensing accuracy of the optical displacement sensor. The ideal light source spectrum for optical displacement sensors should cover the visible light to near-infrared bands and have high spectral energy and stability. The tungsten halogen light source that has been used so far has met the performance requirements of the optical displacement sensor light source, and has a wide spectral range and a strong spectrum. Energy, but the halogen tungsten lamp itself also has the disadvantages of large volume and high energy consumption.
随着光位移传感器的深入研究,光位移传感器小型化、集成化将是未来研究的主要方向,寻找一种体积小、成本低、性能好的光源替代卤钨灯则是光位移传感器光源的研究目标。功率型LED是未来半导体照明的主流技术,其小型化、高效率等特点满足光位移传感器光源小型化研究的需要,但该类LED在红光波段光谱能量不足导致光位移传感器在长波段不能正常工作,限制了其在光位移传感器中的应用。With the in-depth research on optical displacement sensors, the miniaturization and integration of optical displacement sensors will be the main direction of future research. Finding a light source with small size, low cost and good performance to replace tungsten halogen lamps is the research on the light source of optical displacement sensors. Target. Power LED is the mainstream technology of semiconductor lighting in the future. Its miniaturization and high efficiency meet the needs of research on the miniaturization of the light source of the optical displacement sensor. However, the insufficient spectral energy of this type of LED in the red band causes the optical displacement sensor to fail to work normally in the long wavelength band. work, which limits its application in optical displacement sensors.
发明内容Contents of the invention
本发明的目的是提供一种光位移传感器用LED光源的制作方法,提升LED的红光光谱能量,使LED光源满足光位移传感器性能要求,以实现光位移传感器光源小型化。The purpose of the present invention is to provide a manufacturing method of an LED light source for an optical displacement sensor, which improves the red light spectrum energy of the LED, and makes the LED light source meet the performance requirements of the optical displacement sensor, so as to realize the miniaturization of the light source of the optical displacement sensor.
本发明采取的技术方案为:一种光位移传感器用LED光源的制作方法,包括以下步骤:The technical solution adopted by the present invention is: a method for manufacturing an LED light source for an optical displacement sensor, comprising the following steps:
步骤一、制作倒装LED芯片,所述倒装LED芯片至上往下包括蓝宝石衬底1、GaN外延层2、TiNiAg金属层3、铟层4;
步骤二、制作硅基板;包含金球5、铟层4、TiNiAg金属层3、Si板6;
步骤三、倒装焊:对倒装LED芯片、硅基板及热沉8进行焊接和电极的键合;
步骤四、配粉:在黄色荧光粉中掺入10%-30%的红色荧光粉,形成混合荧光粉;
步骤五、制作荧光胶11:将混合荧光粉与灌封胶混合均匀;
步骤六、灌封和固化:盖上球形透镜10,通过透镜上的灌封孔进行荧光胶的灌封,然后对荧光胶进行固化。
优选地,所述红色荧光粉为氮氧化物荧光粉。Preferably, the red phosphor is nitrogen oxide phosphor.
本发明具有的优点和有益效果:本发明是一种实现LED应用于光位移传感器光源的光谱展宽方法。该方法在LED光源封装荧光粉中掺入了一定比列的红色荧光粉,改善了光谱性能,使得LED光源可以应用于整个光传感器工作波长范围,是一种理想的光位移传感器小型化光源。该宽带LED相对于卤钨灯具有低成本、低能耗、无污染、等特性并且满足光位移传感器小型化发展需求,是光位移传感器未来研究的理想光源。The advantages and beneficial effects of the present invention: the present invention is a method for widening the spectrum of LEDs applied to optical displacement sensor light sources. In this method, a certain proportion of red phosphor powder is mixed into the LED light source packaging phosphor powder, which improves the spectral performance and makes the LED light source applicable to the entire working wavelength range of the optical sensor. It is an ideal light source for the miniaturization of the optical displacement sensor. Compared with halogen tungsten lamps, this broadband LED has the characteristics of low cost, low energy consumption, no pollution, etc. and meets the miniaturization development needs of optical displacement sensors. It is an ideal light source for future research on optical displacement sensors.
附图说明Description of drawings
图1是LED封装结构图,其中,1:蓝宝石,2:GaN外延层,3:金属层,4:铟层,5:金球,6:Si板,7:锡层,8:热沉,9:金线,10:球形透镜,11:荧光胶;Figure 1 is a structural diagram of the LED package, where 1: sapphire, 2: GaN epitaxial layer, 3: metal layer, 4: indium layer, 5: gold ball, 6: Si board, 7: tin layer, 8: heat sink, 9: gold wire, 10: spherical lens, 11: fluorescent glue;
图2是本发明方法流程示意图;Fig. 2 is a schematic flow sheet of the method of the present invention;
图3是照明用LED与掺杂红粉的宽带LED光谱对比图,光谱测量范围为600-800nm;Figure 3 is a comparison chart of the spectrum of LEDs for lighting and broadband LEDs doped with red powder, and the spectrum measurement range is 600-800nm;
图4是普通照明LED及该宽带LED应用于光位移传感器位移传感得到的位移传感结果的比较。Fig. 4 is a comparison of the displacement sensing results obtained by the general lighting LED and the broadband LED applied to the displacement sensing of the optical displacement sensor.
表1是光位移传感器用1W宽带LED光源的发光指标。Table 1 is the luminous index of 1W broadband LED light source for optical displacement sensor.
具体实施方式Detailed ways
下面结合附图及实例对本发明做进一步详细描述,请参阅图1至图4。一种光位移传感器用LED光源的制作方法,包括以下步骤:The present invention will be further described in detail below with reference to the accompanying drawings and examples, please refer to FIG. 1 to FIG. 4 . A method for manufacturing an LED light source for an optical displacement sensor, comprising the following steps:
步骤一、制作倒装LED芯片:制作倒装LED芯片,所述倒装LED芯片至上往下包括蓝宝石衬底1、GaN外延层2、TiNiAg金属层3、铟层4;选取1W大功率LED 芯片,采用蓝宝石衬底、背面出光,制作TiNiAg金属层并通过蒸发铟、光刻技术制作铟层,最后完成划片;Step 1. Make a flip-chip LED chip: Make a flip-chip LED chip, which includes a
步骤二、制作硅基板:包含金球5、铟层4、TiNiAg金属层3、Si板6;采用ESD防护技术,在Si板表面制作TiNiAg金属层3及铟层4,最后在铟层4上用金丝球焊机种金球并划片。以上两步骤制作出多个有ESD保护电路、凸点和键合电极的硅基芯片。
步骤三、倒装焊:对准倒装LED芯片和硅基板进行键合,利用焊料锡对硅基芯片和Al热沉进行焊接,键合硅基板和Al基板电极;
步骤四、配粉:在黄色荧光粉中掺入10%-30%的红色荧光粉,形成混合荧光粉,所添加的红色荧光粉为氮氧化物荧光粉,其他体系荧光粉同样也适用,ZnO基体系、石榴石体系的红色荧光粉。
步骤五、制作荧光胶:将混合荧光粉与灌封胶按一定比例均匀混合,灌封胶采用硅胶。
步骤六、灌封和固化:盖上球形透镜,通过透镜上的灌封孔进行荧光胶的灌封,然后对荧光胶进行固化。
图2为以上步骤的流程图,该方法得到的宽带LED较原照明用LED光谱在长波段有明显的展宽,图3为两LED光谱分布图。表1是3批该宽带LED的发光性能指标,较低的色温表明红光成分的增加,同时也保证了较高的光效。Figure 2 is a flow chart of the above steps. Compared with the original lighting LED spectrum, the broadband LED obtained by this method has obvious broadening in the long-wave band, and Figure 3 is a spectrum distribution diagram of two LEDs. Table 1 shows the luminous performance indicators of three batches of the broadband LEDs. The lower color temperature indicates the increase of the red light component, and also ensures a higher luminous efficacy.
表1Table 1
掺入红粉的宽带LED光源在红光光谱范围光谱能量的增强,使得光位移传感器在长波段表现出较好的性能,相对于普通照明用LED光源有明显改善。图4是两类LED光源的位移传感结果对比。可以看到,普通照明LED后端由于光谱能量较弱,影响到了传感器全量程的线性度,宽带LED光源的光位移传感器则表现出良好的位移传感线性度,在光位移传感器应用方面具有很大的改进。The enhancement of spectral energy in the red spectral range of the broadband LED light source mixed with red powder makes the optical displacement sensor show better performance in the long-wave band, which is significantly improved compared with the LED light source for general lighting. Figure 4 is a comparison of the displacement sensing results of two types of LED light sources. It can be seen that due to the weak spectral energy at the back end of the general lighting LED, the linearity of the full range of the sensor is affected, and the optical displacement sensor of the broadband LED light source shows good displacement sensing linearity, which has great potential in the application of optical displacement sensors. Big improvement.
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CN108417683A (en) * | 2018-01-22 | 2018-08-17 | 东莞中之光电股份有限公司 | A packaging method for flip-chip LED automotive lamps |
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CN102130115A (en) * | 2010-01-18 | 2011-07-20 | 海洋王照明科技股份有限公司 | White LED (light emitting diode) planar light source device |
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CN1971952A (en) * | 2006-11-15 | 2007-05-30 | 重庆邮电大学 | Converse welding method of high power LED chip |
US20090289546A1 (en) * | 2008-05-21 | 2009-11-26 | Sony Corporation | Phosphor and method for manufacturing the same, and light-emitting device and display device using phosphor |
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CN108417683A (en) * | 2018-01-22 | 2018-08-17 | 东莞中之光电股份有限公司 | A packaging method for flip-chip LED automotive lamps |
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