CN103762956A - Frequency switchable micro mechanical resonator and manufacture method thereof - Google Patents
Frequency switchable micro mechanical resonator and manufacture method thereof Download PDFInfo
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- CN103762956A CN103762956A CN201310750721.XA CN201310750721A CN103762956A CN 103762956 A CN103762956 A CN 103762956A CN 201310750721 A CN201310750721 A CN 201310750721A CN 103762956 A CN103762956 A CN 103762956A
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Abstract
The invention discloses a frequency switchable micro mechanical resonator and a manufacture method thereof. The frequency switchable micro mechanical resonator comprises an intermediate column, a movable structure, a plurality of driving/detecting electrodes and air or solid clearances, wherein the movable structure is supported by the intermediate column connected to a centroid of the movable structure; the plurality of driving/detecting electrodes are positioned around the movable structure in a radial shape; the air or solid clearances are positioned between the movable structure and the driving/detecting electrodes. Parts of the plurality of driving/detecting electrodes are connected together to form driving electrodes, and other electrodes are connected together to form detecting electrodes. Under the condition that the dimension of the resonator does not decrease, high frequency output is achieved by means of a high order modal of the resonator, loss of anchor points is reduced, and high-quality factors are kept.
Description
Technical field
The present invention relates to the switchable micromechanical resonator of a kind of frequency and preparation method, belong to radio-frequency micro electromechanical (RF MEMS) technical field.
Background technology
Modern Digital System is towards the future development of small size low-power consumption, and the resonator that requirement can be integrated replaces conventional quartz as clock source (RTC).Conventionally, micro electronmechanical (MEMS) resonator of high-quality-factor (Q) is considered to the clock devices [referring to " C.T.-C.Nguyen; MEMS Technology for Timing and Frequency Control; IEEE Trans.Ultrason., Ferroelect., Freq.Contr.; Vol.54; no.2, pp.251-270, Dec.2007 "] of future ideality.In recent years, micromechanical resonator research has both at home and abroad obtained some breakthroughs, wherein the resonance frequency of micromechanical disk resonator reaches special (surpassing) high frequency stage casing (UHF range), Q value has also surpassed 10000, this makes it can be applied to the filter circuit of wireless communication system and high Q value reference oscillation circuit [referring to " J.R.Clark, W.T.Hsu, M.A.Abdelmoneum, and C.T.-C.Nguyen, High-Q UHF Micromechanical Radial-Contour Mode Disk Resonators, J.Microelectromech.Syst., Vol.14, pp.1298-1310, 2005 "].
Rf-resonator is the primary element of radio circuit, is widely used in the circuit such as filtering, vibration and adjustable amplification and frequency meter.As other rf-resonator, it can be applied in wireless communication field, as radio-frequency system, global position system and radar communications system etc.Compare other rf-resonator, micromechanical disk resonator has the high Q ratio of power consumption (energy storage with) value, miniaturization, lightweight, intellectuality, low-power consumption and low-cost feature, meets the requirements such as current mobile communication mobile phone, internet commercial affairs wireless access system, Bluetooth system, global positioning system.In recent years, micromechanical disk resonator research has both at home and abroad obtained some breakthroughs, the resonance frequency of vibrating micromechanical disk resonator is raised to spy's (surpassing) high frequency stage casing (mid-UHF range), Q value has also surpassed 10000, and this makes it can be applied to filter circuit and the high Q value reference oscillation circuit of wireless communication handset.
At present micromechanical resonator mainly adopts capacitive working method, and the electrostatic force by drive electrode drives resonance structure, and respond to and exported the processing that realizes signal by detecting electrode.In order to realize higher frequency, reducing resonator dimensions is conventional method.Small scale structures, by causing actuating force and the induction force of capacitance type resonator to diminish, causes adverse effect to the signal strength signal intensity of resonator, brings very large insertion loss.The exigent machining accuracy of undersized device architecture on the other hand, particularly the technological requirement of device is reduced to submicron order and nanoscale yardstick at present, and traditional manufacturing process is difficult to meet the demands as photoetching etc.As making resonator anchor point position, accuracy error that repeatedly alignment brings produces deviation, this will bring very large energy loss, and the nanoscale spacing of electrode and resonance plate is also difficult to control by common lithographic accuracy, and the cost of the submicron-scale process technologies such as ion beam exposure is too high, be badly in need of a kind of resonator structure and process technology that contributes to overcome above-mentioned shortcoming.When resonance frequency is when hundreds of MHz extremely count GHz, the size of harmonic oscillator will be reduced to sub-micron, nanoscale even, dimension and scale effect can cause a lot of restrictions: the skin effect that (1) is serious, and the support end loss of the undesirable generation of (2) anchor point, etc.Therefore, when improving resonance frequency, how keeping high Q is the matter of utmost importance of micro-nano resonating device research.
In addition, for reducing power consumption, digital system switches to low-power consumption or park mode at one's leisure, needs system clock switching frequency fast.Current technology is to be realized and being regulated by PLL circuit frequency multiplication, system complex, and cost is high.The present invention proposes a kind of Novel disc resonator, utilize the multiple modalities of its in plane vibration, realize frequency and switch fast.Echo Wall mode (Whisperinggallerymodes, WGM) be a kind of high frequent vibration mode of disc structure, sound wave is only in the bounce-back of the edge of circumference, do not enter the center of circle, significantly reduced anchor point loss, improved Q value [referring to " L.Rayleigh; The Problem ofthe Whispering Gallery; Philos.Mag.20, pp.1001,1910 "].Therefore, the oscillator that adopts this Novel resonator with high-frequency and high-Q-value to form, phase noise is little, and frequency is switched and can be realized by changing electrode connection mode, does not need PLL circuit, has significantly reduced system power dissipation.
Compare with the manufacture craft of the material of traditional C VD growth structure layer, adopt soi wafer to manufacture MEMS resonator, can reduce the loss of material assertive evidence, improve resonator Q value; And can make up CVD and cannot grow compared with the defect of thick film; Also make in addition the complexity of technique significantly reduce, cost declines.
Summary of the invention
The object of the invention is to, provide a kind of frequency switchable disk resonator, by changing the connected mode of drive electrode, change resonance frequency; The manufacture method of this resonator based on SOI proposed simultaneously.
For achieving the above object, the present invention proposes the switchable micromechanical resonator of a kind of frequency, and it comprises:
Center pillar;
Movable structure, it is supported by the center pillar that is connected to its barycenter;
A plurality of driving/detecting electrodes, it is radial and is positioned at movable structure around; Partial electrode in described a plurality of driving/detecting electrode is joined together to form drive electrode, and remaining electrode is joined together to form detecting electrode;
Air or solid gap, between described movable structure and each driving/detecting electrode.
The present invention also proposes the preparation method of the switchable micromechanical resonator of a kind of frequency as above, and it comprises:
Silicon dioxide on step 3, etching driving/detecting electrode and support center pillar hole are until expose top layer silicon;
Step 5, deposited metal also graphically realize metal electrode pad and metallic packaging ring;
From technique scheme, can find out, the invention has the beneficial effects as follows:
Novel disc resonance structure provided by the invention has following advantage:
By changing the connected mode of drive electrode, excite different resonance modes, realized with single resonator the output of a plurality of frequencies is provided, this feature has met modern wireless communication systems well to the demand of switching frequency clock devices fast, has expanded the purposes of MEMS resonator.
The present invention, in the situation that keeping resonator dimensions not reduce, utilizes the high order mode of resonator to realize the output of higher frequency, has reduced anchor point loss simultaneously, still keeps high-quality-factor.
Resonator by with IC technique mutually compatible MEMS process technology make, easily and IC integrated at same chip.Manufacture method based on SOI, the maximized stress that reduces device layer, is conducive to improve resonator Q value, has increased side capacity area, reduces its motional impedance, but also has reduced technology difficulty.
In a word, based on the switchable disk resonator of novel frequency provided by the invention, be the desirable components and parts that can meet the future broadband wireless communication systems demand for development of Highgrade integration, miniaturization, high-frequency, low-power consumption.
Accompanying drawing explanation
Fig. 1 is the switchable micromechanical resonator structural representation of frequency provided by the invention;
Fig. 2 (a) is the schematic diagram of the first electrode connection mode of the switchable micromechanical resonator of frequency provided by the invention;
Fig. 2 (b) is the schematic diagram of the second electrode connection mode of the switchable micromechanical resonator of frequency provided by the invention;
Fig. 2 (c) is the schematic diagram of the third electrode connection mode of the switchable micromechanical resonator of frequency provided by the invention;
Fig. 2 (d) is the schematic diagram of the 4th kind of electrode connection mode of the switchable micromechanical resonator of frequency provided by the invention;
Fig. 3 is the switchable micromechanical resonator fabrication processing of frequency provided by the invention figure.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Refer to shown in Fig. 1, the invention provides the switchable micromechanical resonator of a kind of frequency, comprising:
One center pillar 1;
One movable structure 2, the material of this movable structure 2 is silicon or diamond, by the center pillar 1 that is connected to its barycenter, is supported; Wherein, described movable structure 2 can be disk, disk with holes and square shape;
A plurality of driving/detecting electrodes 3, its material is silicon, diamond or metal, and it is radial and is positioned at disk movable structure 2 around, and the quantity of this driving/detecting electrode 3 is greater than 3 (resonator at this with 24 electrodes illustrates);
Air or solid gap 4, the manufacturing process of air gap is such, and disk 2 lateral growth sacrifice layers are such as silicon dioxide, and then growing polycrystalline silicon is filled the gap between disk and electrode 3, finally use hydrofluoric acid to discharge device, the position of so original sacrifice layer has just formed air gap.
Solid clearance material is silica, silicon nitride or hafnium oxide, and it is between this disk movable structure 2 and each driving/detecting electrode 3.The relative position of disk 2 and electrode 3 by lithographic definition for the first time out, because being there is not alignment error with a photoetching.Disk movable structure 2 is to be supported by the polysilicon of growing afterwards, and bridge architecture is connected to disc centre, and disk is suspended in midair.Electrode is supported by oxygen buried layer below, and size is rationally set, and controls release time, can make oxygen buried layer below disk be corroded completely.And because the large oxygen buried layer residue below of electrode area much can support.
Described resonator be by with integrated circuit (IC) technique mutually compatible MEMS process technology make, the present invention adopts SOI technique to make transmission line and the movable structure of resonator, by discharging silicon dioxide sacrificial layer, obtains resonator structure.Gap between electrode 3 and disk 2 sidewalls is below 200nm, can realize by thermal oxidation or atomic layer deposition (ALD) technology.A plurality of electrodes 3 can inspire the in plane vibration high-order Echo Wall mode (Whisperinggallerymodes of resonator, WGM), and by programmable circuit, control electrode connected mode, realize the switching of different mode of oscillations, thereby change the output frequency of resonator.The present invention, in the situation that keeping resonator dimensions not reduce, has realized high resonance frequency, high-quality-factor (Q);
Fig. 2 is the switchable disk resonator of frequency provided by the invention, the schematic diagram of four kinds of different electrode connection modes.As shown in Figure 2, by adjacent 12 electrodes, 6 electrodes, 3 electrodes are linked together and are joined together to form drive electrode every an electrode, and other electrodes are joined together to form detecting electrode.The drive electrode linking together is applied to positive bias, the detecting electrode linking together is applied to back bias voltage, movable structure can ground connection or unsettled.AC signal encourages movable structure vibration jointly by T-shaped bias device (Bias-Tee) and direct current biasing, and response signal is electrode exporting by Bias-Tee isolated DC after testing.Wherein, T-shaped bias device is used for providing direct current (DC) bias in radio frequency AC signal, and does not affect AC signal; AC signal is that testing equipment provides, and AC signal and direct current biasing are applied on capacitance structure, and electrostatic force Drive Structure is provided, and when the frequency of AC signal is close with resonant frequency, resonance will occur resonator.Conventionally resonator electrode designs in the place of resonance mode displacement maximum, and for the resonator with a plurality of resonance modes, as long as electrode design just can be motivated to required mode in the place of corresponding modal displacement maximum.Under different resonance modes, the equivalent stiffness of resonator with quality all than the same, so also difference of its resonance frequency.Fig. 2 for example understands four kinds of different electrode connection modes, and the different resonance mode that inspires makes same resonator can have different resonance frequency output.
Fig. 3 is the switchable disk resonator fabrication processing of frequency provided by the invention figure.Resonator manufacture method, specifically comprises the following steps:
Silicon dioxide 5 on step 3, etching driving/detecting electrode 3 and support center pillar hole are until expose top layer silicon;
Step 5, deposited metal also graphically realize metal electrode pad and metallic packaging ring 10;
The resonator that prior art is made generally only has a frequency output.And the such scheme that the present invention proposes makes single resonator have multi-electrode, multi-modal, multi-frequency, and can select by different connected mode frequencies.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. the switchable micromechanical resonator of frequency, it comprises:
Center pillar;
Movable structure, it is supported by the center pillar that is connected to its barycenter;
A plurality of driving/detecting electrodes, it is radial and is positioned at movable structure around; Partial electrode in described a plurality of driving/detecting electrode is joined together to form drive electrode, and remaining electrode is joined together to form detecting electrode;
Air or solid gap, between described movable structure and each driving/detecting electrode.
2. resonator according to claim 1, wherein, described movable structure be shaped as disk, disk with holes, or square.
3. resonator according to claim 1, wherein, the material in described solid gap is silica, silicon nitride or hafnium oxide.
4. resonator according to claim 1, wherein, the quantity of described driving/detecting electrode is greater than 3.
5. resonator according to claim 1, wherein, drive electrode in driving/detecting electrode applies positive bias, detecting electrode applies back bias voltage, movable structure ground connection or unsettled, AC signal encourages movable structure to vibrate by biasing networks and direct current biasing jointly, and response signal is electrode exporting by biasing networks isolated DC after testing, and different driving/detecting electrode connected modes can motivate different resonance modes.
6. resonator according to claim 5, wherein, the connected mode of described different driving/detecting electrode comprises: by adjacent 12 electrodes, 6 electrodes, 3 electrodes are linked together and are joined together to form drive electrode every an electrode, and other electrodes are joined together to form detecting electrode.
7. a preparation method for the switchable micromechanical resonator of frequency as claimed in claim 1, it comprises:
Step 1, thermal oxidation SOI sheet, and in the top layer silicon of described SOI sheet plasma reinforced chemical vapor deposition silicon dioxide layer, etching silicon dioxide is to SOI top layer silicon, and utilize silicon dioxide layer as hard mask etching SOI top layer silicon until oxygen buried layer, form the basis of driving/detecting electrode and movable structure;
Step 2, by low pressure chemical vapor deposition polysilicon, and polysilicon is carried out to thermal oxidation, to form the air gap between drivings/detecting electrode and movable structure after discharging, or the method for passing through atomic layer deposited hafnium oxide on the sidewall of driving/detecting electrode and movable structure growing nano grade dielectric as the solid gap of driving/detecting electrode and movable structure;
Silicon dioxide on step 3, etching driving/detecting electrode and support center pillar hole are until expose top layer silicon;
Step 4, by low pressure chemical vapor deposition one deck low stress polysilicon of growing, after Implantation annealing, low stress polysilicon layer between etching driving/detecting electrode, realizes self-aligned processing technique and the isolation of driving/detecting electrode electrical signal and the making of structure of supporting center pillar;
Step 5, deposited metal also graphically realize metal electrode pad and metallic packaging ring;
Step 6, revolve figure photoresist, and carry out exposure imaging, make release aperture structure, described release aperture is positioned at directly over disk, and disk is exposed completely, and electrode only has small part to expose.
8. method as claimed in claim 7, wherein, the oxygen buried layer consistency of thickness of the gross thickness of described silicon dioxide and described SOI sheet.
9. method as claimed in claim 7, wherein, described air gap or solid-state gap are less than 100nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107251425A (en) * | 2014-10-22 | 2017-10-13 | 微芯片科技公司 | The multi-thread coil spring MEMS resonator applied for oscillator and real-time clock |
| CN110596041A (en) * | 2019-06-06 | 2019-12-20 | 山东大学 | Refractive index sensor based on plasma diamond nanoring |
| CN111200411A (en) * | 2020-02-16 | 2020-05-26 | 南通大学 | Micromechanical piezoelectric disc resonator and manufacturing method thereof |
| CN111490741A (en) * | 2019-01-29 | 2020-08-04 | 中国科学院半导体研究所 | Arrayed plane shear mode radio frequency micro-electromechanical resonator |
| CN111487567A (en) * | 2020-05-14 | 2020-08-04 | 上海科技大学 | Piezoelectric magnetic sensor based on Lorentz force and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101931379A (en) * | 2009-06-19 | 2010-12-29 | 索尼公司 | Resonator and manufacture method thereof, the oscillator that comprises this resonator and electronic equipment |
| US20120105173A1 (en) * | 2009-05-29 | 2012-05-03 | Infineon Technologies Ag | MEMS Device |
| JP2012222760A (en) * | 2011-04-14 | 2012-11-12 | New Japan Radio Co Ltd | Mems resonator and resonance frequency regulation method thereof |
| CN103036527A (en) * | 2012-12-10 | 2013-04-10 | 电子科技大学 | Square block type micromechanical resonator |
| CN103281048A (en) * | 2013-06-14 | 2013-09-04 | 中国科学院半导体研究所 | Micromechanical resonator and manufacturing method thereof |
| CN103326691A (en) * | 2013-05-15 | 2013-09-25 | 中国科学院半导体研究所 | Micro mechanical resonator switchable in frequency |
| CN103338022A (en) * | 2013-07-22 | 2013-10-02 | 中国科学院半导体研究所 | Frequency-adjustable MEMS (Micro-Electromechanical System) resonator |
| CN103363970A (en) * | 2013-06-20 | 2013-10-23 | 上海交通大学 | Electromagnetic-driving electromagnetic-detection triaxial microgyroscope with bulk acoustic wave resonance, and preparation method thereof |
-
2013
- 2013-12-31 CN CN201310750721.XA patent/CN103762956A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120105173A1 (en) * | 2009-05-29 | 2012-05-03 | Infineon Technologies Ag | MEMS Device |
| CN101931379A (en) * | 2009-06-19 | 2010-12-29 | 索尼公司 | Resonator and manufacture method thereof, the oscillator that comprises this resonator and electronic equipment |
| JP2012222760A (en) * | 2011-04-14 | 2012-11-12 | New Japan Radio Co Ltd | Mems resonator and resonance frequency regulation method thereof |
| CN103036527A (en) * | 2012-12-10 | 2013-04-10 | 电子科技大学 | Square block type micromechanical resonator |
| CN103326691A (en) * | 2013-05-15 | 2013-09-25 | 中国科学院半导体研究所 | Micro mechanical resonator switchable in frequency |
| CN103281048A (en) * | 2013-06-14 | 2013-09-04 | 中国科学院半导体研究所 | Micromechanical resonator and manufacturing method thereof |
| CN103363970A (en) * | 2013-06-20 | 2013-10-23 | 上海交通大学 | Electromagnetic-driving electromagnetic-detection triaxial microgyroscope with bulk acoustic wave resonance, and preparation method thereof |
| CN103338022A (en) * | 2013-07-22 | 2013-10-02 | 中国科学院半导体研究所 | Frequency-adjustable MEMS (Micro-Electromechanical System) resonator |
Non-Patent Citations (1)
| Title |
|---|
| TRISTAN O. ROCHELEAU: "ACOUSTIC WHISPERING GALLERY MODE RESONATOR WITH Q>109,000 AT 515MHZ", 《2012 IEEE 25TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS)》, 29 February 2012 (2012-02-29), pages 672 - 675 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107251425A (en) * | 2014-10-22 | 2017-10-13 | 微芯片科技公司 | The multi-thread coil spring MEMS resonator applied for oscillator and real-time clock |
| CN111490741A (en) * | 2019-01-29 | 2020-08-04 | 中国科学院半导体研究所 | Arrayed plane shear mode radio frequency micro-electromechanical resonator |
| CN111490741B (en) * | 2019-01-29 | 2023-02-28 | 中国科学院半导体研究所 | Arrayed plane shear mode radio frequency micro-electromechanical resonator |
| CN110596041A (en) * | 2019-06-06 | 2019-12-20 | 山东大学 | Refractive index sensor based on plasma diamond nanoring |
| CN111200411A (en) * | 2020-02-16 | 2020-05-26 | 南通大学 | Micromechanical piezoelectric disc resonator and manufacturing method thereof |
| CN111487567A (en) * | 2020-05-14 | 2020-08-04 | 上海科技大学 | Piezoelectric magnetic sensor based on Lorentz force and preparation method thereof |
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