CN103762946A - High-speed drive amplifier - Google Patents
High-speed drive amplifier Download PDFInfo
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- CN103762946A CN103762946A CN201410007611.9A CN201410007611A CN103762946A CN 103762946 A CN103762946 A CN 103762946A CN 201410007611 A CN201410007611 A CN 201410007611A CN 103762946 A CN103762946 A CN 103762946A
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Abstract
The invention provides a high-speed drive amplifier which comprises a drive amplifying circuit and an accelerating circuit. The drive amplifying circuit comprises four output ends and a power supply end. The accelerating circuit comprises a first crystal triode, a second crystal triode, a third crystal triode, a fourth crystal triode, a fifth crystal triode and a first resistor, wherein the bases of the first crystal triode and the second crystal triode are respectively connected with two output ends of the drive amplifying circuit, the bases of the third crystal triode and the fourth crystal triode are respectively connected with the other two ends of the drive amplifying circuit, the collectors of the first crystal triode and the third crystal triode are connected with the power supply end, the emitter of the first crystal triode is connected with the collector of the third crystal triode, the emitter of the second crystal triode is connected with the collector of the fourth crystal triode, the emitters of the third and the fourth crystal triode are jointly connected to the collector the fifth crystal triode, and the emitter of the fifth crystal diode is grounded through the first resistor. By the accelerating circuit, the rising and falling edge time of output signals can be improved, and circuit working speed can be increased.
Description
Technical field
The present invention relates to signal amplification technique, relate in particular to a kind of high-speed driving amplifier.
Background technology
At present, in high-speed digital circuit, due to parasitic impact, signal attenuation is very large, the driving amplifier module that is absolutely necessary.Along with the raising of circuit scale and speed, driving amplifier will drive more differential pair, and require rising edge and the trailing edge time shorter.Traditional method is to adopt a plurality of drivings that increase of penetrating with circuit in parallel.
Yet, adopt conventional method to have two problems, the firstth, penetrate with the power consumption of circuit very large, along with the increase with circuit is penetrated in parallel connection, power consumption sharply increases, and the secondth, along with load circuit scale increases, load capacitance is also increasing, penetrate with circuit when driving capacitive load, the rising edge of signal and trailing edge time are obviously elongated, have affected circuit working speed.
Summary of the invention
In view of this, the invention provides a kind of high-speed driving amplifier that can accelerate circuit working speed.
A kind of high-speed driving amplifier, it is at high-speed digital circuit amplifying signal, described high-speed driving amplifier comprises a drive amplification circuit and an accelerating circuit, described drive amplification circuit comprises two inputs, four outputs and a power end, described accelerating circuit comprises four inputs corresponding with the output of described drive amplification circuit and two outputs, described accelerating circuit comprises a first crystal triode, second transistor, the 3rd transistor, the 4th transistor, the 5th transistor and first resistance, two inputs that the base stage of the base stage of described first crystal triode and described the second transistor is described accelerating circuit are also connected with two outputs of described drive amplification circuit respectively, another two inputs that the base stage of described the 3rd transistor and described the 4th transistor is described accelerating circuit are also connected with another two outputs of described drive amplification circuit respectively, the collector electrode of described first crystal triode and described the 3rd transistor connects power end, the emitter of described first crystal triode is connected with the collector electrode of described the 3rd transistor and is an output of described accelerating circuit, the emitter of described the second transistor is connected with the collector electrode of described the 4th transistor and is another output of described accelerating circuit, the emitter of the emitter of described the 3rd transistor and described the 4th transistor is connected to the collector electrode of described the 5th transistor jointly, the emitter of described the 5th transistor is through described the first grounding through resistance.
Compared with prior art, in high-speed driving amplifier provided by the invention, can improve rising edge and the trailing edge time of output signal by arranging of accelerating circuit, accelerate circuit working speed, power consumption is lower, drives larger.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of high-speed driving amplifier provided by the invention.
Main element symbol description
High-speed driving amplifier 100
Power end Vcc
Two input INP, INN
High-speed driving amplifier out OUTP, OUTN
First to the 12 transistor Q1～Q12
Resistance R 1～R6
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 1, a kind of high-speed driving amplifier 100 that it provides for embodiment of the present invention, it is at high-speed digital circuit amplifying signal, and described high-speed driving amplifier 100 comprises a drive amplification circuit 120 and an accelerating circuit 140.Described drive amplification circuit 120 comprises a power end Vcc, two input INP, INN and four output 120c, 120d, 120e, 120f.
Described accelerating circuit 140 comprises a first crystal triode Q1, the second transistor Q2, a 3rd transistor Q3, the 4th transistor Q4, a 5th transistor Q5 and first resistance R 1.Accelerating circuit 140 comprises two output OUTP, OUTN and four inputs, and wherein four of this accelerating circuit 140 inputs are corresponding with output 120c, 120d, 120e, the 120f of drive amplification circuit 120.
Described drive amplification circuit 120 comprises that a differential amplifier circuit 122 and one penetrate with circuit 124, described differential amplifier circuit 122 comprises that two inputs are INP, INN and two output 120c, 120d, described two outputs that input is corresponding that comprise two inputs corresponding with two output 122c, 122d of differential amplifier circuit 122 and two and accelerating circuit 140 with circuit 124 of penetrating, two outputs also penetrating with circuit 124 are output 120e, 120f.Penetrate with the output of 124 pairs of differential amplifier circuits 122 of circuit and carry out level shift.
Penetrate with circuit 124 and comprise a 9th transistor Q9, the tenth transistor Q10, the 11 transistor Q11, a 12 transistor Q12, the 5th resistance R 5 and the 6th resistance R 6, the 9th base stage of transistor Q9 and the base stage of the 11 transistor Q11 are two inputs penetrating with circuit 124, and the 9th base stage of transistor Q9 and the transmitting of the 11 transistor Q11 be 124 two outputs penetrating with circuit very.
The base stage of first crystal triode Q1 is that input the correspondence of accelerating circuit 140 is connected with the output 120c of differential amplifier circuit 122, the collector electrode of first crystal triode Q1 is connected to power end Vcc, and the emitter of first crystal triode Q2 is connected with the collector electrode of described the 3rd transistor Q3 and this link is the output OUTN of accelerating circuit 140.The base stage of the second transistor Q2 is that input the correspondence of accelerating circuit 140 is connected with the output 120d of differential amplifier circuit 122, the collector electrode of the second transistor Q2 is connected to power end Vcc, and the emitter of the second transistor Q2 is connected with the collector electrode of the 4th transistor Q4 and this link is the output OUTP of accelerating circuit 140.
The base stage of the 3rd transistor Q3 is that input the correspondence of accelerating circuit 140 is connected with the output 120e of differential amplifier circuit 122, the base stage of the 4th transistor Q4 is that input the correspondence of accelerating circuit 140 is connected with the output 120f of differential amplifier circuit 122, also the base stage of the 4th transistor Q4 is connected between the emitter of the 9th transistor Q9 and the collector electrode of the tenth transistor Q10, the emitter of the emitter of the 3rd transistor Q3 and the 4th transistor Q4 is connected to the collector electrode of the 5th transistor Q5 jointly, the emitter of the 5th transistor is through described the first resistance 146 ground connection.
The collector electrode of the 6th transistor Q6 is connected to power end Vcc through the second resistance R 2, the collector electrode of the 7th transistor Q7 is connected to power end Vcc through the 3rd resistance R 3, the 6th transistor Q6 collector electrode is respectively with the collector electrode of the 7th transistor Q7 two inputs penetrating with circuit 124 and is also connected with the base stage of first crystal triode Q1 and the base stage of the second transistor Q2 respectively, the emitter of the 6th transistor Q6 and the 7th triode Q7 is connected to the collector electrode of the 8th transistor Q8 jointly, the emitter of the 8th transistor Q8 is through the 4th resistance R 4 ground connection.
The base stage of the 9th transistor Q9 is connected with the base stage of first crystal triode Q1 and is jointly connected between the collector electrode and the second resistance R 2 of the 6th transistor Q6, the 9th collector electrode of transistor Q9 and the collector electrode of the 11 transistor Q11 are connected to power end Vcc, the emitter of the 9th transistor Q9 is connected with the collector electrode of the tenth transistor Q10 and the base stage of the 4th transistor Q4 respectively, and the emitter of the tenth transistor Q10 is through the 5th resistance R 5 ground connection.
The base stage of the 11 transistor Q11 is connected with the base stage of the second transistor Q2 and is jointly connected between the collector electrode and the 3rd resistance of the 7th transistor Q7, the emitter of the 11 transistor Q11 is connected with the collector electrode of the 12 transistor Q12 and the base stage of the 3rd transistor Q3 respectively, also the base stage of the 3rd transistor Q3 is connected between the 12 collector electrode of transistor Q12 and the emitter of the 11 transistor Q11, and the emitter of the 12 transistor Q11 is through described the 6th resistance R 6 ground connection.
The signal of two input INN and INP input is differential signal, the base stage of the base stage of the 3rd transistor Q3 and the 4th transistor Q4 is anti-phase, the base stage of the 3rd transistor Q3 and the 4th transistor Q4 share the bias current mirror consisting of the 5th transistor Q5 and the first resistance R 1, when the signal of output OUTP is switched to low level from high level, be that output OUTP is while being trailing edge signal, because collector electrode and the base stage of the 4th transistor Q4 is anti-phase, the 4th transistor Q4 base stage is rising edge signal, also be that OUTP is while being switched to low level from high level, the base stage of the 4th transistor Q4 is switched to high level from low level, now the base stage of the 3rd transistor Q3 is trailing edge signal, from high level, be switched to low level, current mirror the 5th transistor Q5 electric current will flow to the 4th transistor Q4, thereby accelerate the electric discharge of output OUTP, owing to not having electric current to flow through in the 3rd transistor Q3, so current direction load in OUTN, through the 3rd transistor Q3, flow to the 5th transistor Q5 and the first resistance R 1, thereby accelerate the rising edge of OUTN.
When the signal of output OUTP is switched to high level from low level, be that output OUTP is while being rising edge signal, the 4th transistor Q4 base stage is trailing edge signal, also be that OUTP is while being switched to high level from low level, the base stage of the 4th transistor Q4 is switched to low level from high level, now the base stage of the 3rd transistor Q3 is rising edge signal, from low level, be switched to high level, current mirror the 5th transistor Q5 electric current will flow to the 3rd transistor Q3, thereby accelerate the electric discharge of output OUTN, owing to not having electric current to flow through in the 4th transistor Q4, so current direction load in OUTP, through the 3rd transistor Q4, flow to the 5th transistor Q5 and the first resistance R 1, thereby accelerate the rising edge of OUTP.
The accelerating circuit 140 being comprised of Q1～Q5 makes high-speed driving amplifier have very strong driving force, and its driving force is the more than 3 times of driving force of radio-frequency driven amplifying circuit 120 circuit.
In high-speed driving amplifier provided by the invention, the 140 couples of output OUTP of accelerating circuit that consist of Q1～Q5 and rising edge and the trailing edge of OUTN end signal accelerate, and improve rising edge and the trailing edge time of signal, accelerate circuit working speed, power consumption is lower, drives larger.
Be understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion by technical conceive according to the present invention, and all these change and distortion all should belong to the protection range of the claims in the present invention.
Claims (3)
1. a high-speed driving amplifier, it is at high-speed digital circuit amplifying signal, described high-speed driving amplifier comprises a drive amplification circuit, described drive amplification circuit comprises four outputs and a power end, it is characterized in that, described high-speed driving amplifier also comprises an accelerating circuit, described accelerating circuit comprises four inputs corresponding with the output of described drive amplification circuit and two outputs, described accelerating circuit comprises a first crystal triode, second transistor, the 3rd transistor, the 4th transistor, the 5th transistor and first resistance, two inputs that the base stage of the base stage of described first crystal triode and described the second transistor is described accelerating circuit are also connected with two outputs of described drive amplification circuit respectively, another two inputs that the base stage of described the 3rd transistor and described the 4th transistor is described accelerating circuit are also connected with another two outputs of described drive amplification circuit respectively, the collector electrode of described first crystal triode and described the 3rd transistor connects power end, the output that the emitter of described first crystal triode is connected with the collector electrode of described the 3rd transistor and link is described accelerating circuit, the emitter of described the second transistor and another output that the collector electrode of described the 4th transistor is connected and link is described accelerating circuit, the emitter of the emitter of described the 3rd transistor and described the 4th transistor is connected to the collector electrode of described the 5th transistor jointly, the emitter of described the 5th transistor is through described the first grounding through resistance.
2. high-speed driving amplifier as claimed in claim 1, it is characterized in that, described drive amplification circuit comprises that a differential amplifier circuit and one penetrate with circuit, described differential amplifier circuit comprises two inputs and two outputs, described penetrating with circuit comprises two inputs and two outputs, two inputs that described two outputs penetrating with circuit are described accelerating circuit, described differential amplifier circuit comprises the 6th transistor, the 7th transistor, the 8th transistor, second resistance, the 3rd resistance and the 4th resistance, two inputs of described drive amplification circuit are respectively the base stage of described the 6th transistor and the 7th transistor, two outputs of described drive amplification circuit are respectively the collector electrode of described the 6th transistor and the 7th transistor, the collector electrode of described the 6th transistor is connected to power end through described the second resistance, the collector electrode of described the 7th transistor is connected to power end through described the 3rd resistance, the current collection of described the 6th transistor collector electrode and described the 7th transistor is penetrated described in very with two inputs of circuit and is connected with the base stage of described first crystal triode and the base stage of described the second transistor respectively as another two inputs of described accelerating circuit, the emitter of described the 6th transistor and described the 7th triode is connected to the collector electrode of described the 8th transistor jointly, the emitter of described the 8th transistor is through described the 4th grounding through resistance.
3. high-speed driving amplifier as claimed in claim 2, it is characterized in that, described penetrating with circuit comprises the 9th transistor, the tenth transistor, the 11 transistor, the 12 transistor, the 5th resistance and the 6th resistance, described the 9th base stage of transistor and the base stage of described the 11 transistor are penetrated two inputs with circuit described in being, described in described the 9th base stage of transistor and the transmitting very of described the 11 transistor, penetrate two outputs with circuit, the base stage of described the 9th transistor is connected with the collector electrode of described the 6th transistor, described the 9th collector electrode of transistor and the collector electrode of described the 11 transistor are connected to power end, the emitter of described the 9th transistor is connected with the collector electrode of described the tenth transistor and the base stage of described the 4th transistor respectively, the emitter of described the tenth transistor is through described the 5th grounding through resistance, the base stage of described the 11 transistor is connected with the collector electrode of described the 7th transistor, the emitter of described the 11 transistor is connected with the collector electrode of described the 12 transistor and the base stage of described the 3rd transistor respectively, the emitter of described the 12 transistor is through described the 6th grounding through resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410007611.9A CN103762946B (en) | 2014-01-08 | 2014-01-08 | High-speed driving amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410007611.9A CN103762946B (en) | 2014-01-08 | 2014-01-08 | High-speed driving amplifier |
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| Publication Number | Publication Date |
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| CN103762946A true CN103762946A (en) | 2014-04-30 |
| CN103762946B CN103762946B (en) | 2017-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410007611.9A Active CN103762946B (en) | 2014-01-08 | 2014-01-08 | High-speed driving amplifier |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104270129A (en) * | 2014-09-26 | 2015-01-07 | 永济新时速电机电器有限责任公司 | IGBT driving receiving and fault feedback circuit of converter |
| CN105610404A (en) * | 2015-12-23 | 2016-05-25 | 武汉邮电科学研究院 | Distributed optical driver for realizing high amplitude and high bandwidth output |
| CN109799871A (en) * | 2019-01-04 | 2019-05-24 | 武汉邮电科学研究院有限公司 | A kind of high frequency clock signal driving circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050046481A1 (en) * | 2003-09-03 | 2005-03-03 | Broadcom Corporation | System and method to accelerate settling of an amplifier |
| CN1707942A (en) * | 2004-06-09 | 2005-12-14 | 恩益禧电子股份有限公司 | Voltage comparator circuit |
| CN1767379A (en) * | 2004-09-24 | 2006-05-03 | 三星电子株式会社 | Be used to improve the circuit and the method for slew rate of differential amplifiers |
-
2014
- 2014-01-08 CN CN201410007611.9A patent/CN103762946B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050046481A1 (en) * | 2003-09-03 | 2005-03-03 | Broadcom Corporation | System and method to accelerate settling of an amplifier |
| CN1707942A (en) * | 2004-06-09 | 2005-12-14 | 恩益禧电子股份有限公司 | Voltage comparator circuit |
| CN1767379A (en) * | 2004-09-24 | 2006-05-03 | 三星电子株式会社 | Be used to improve the circuit and the method for slew rate of differential amplifiers |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104270129A (en) * | 2014-09-26 | 2015-01-07 | 永济新时速电机电器有限责任公司 | IGBT driving receiving and fault feedback circuit of converter |
| CN104270129B (en) * | 2014-09-26 | 2017-08-11 | 永济新时速电机电器有限责任公司 | A kind of IGBT drivings of current transformer are received and fault feedback circuit |
| CN105610404A (en) * | 2015-12-23 | 2016-05-25 | 武汉邮电科学研究院 | Distributed optical driver for realizing high amplitude and high bandwidth output |
| CN105610404B (en) * | 2015-12-23 | 2018-02-16 | 武汉邮电科学研究院 | A kind of distributed CD-ROM driver for realizing high amplitude of oscillation high bandwidth output |
| CN109799871A (en) * | 2019-01-04 | 2019-05-24 | 武汉邮电科学研究院有限公司 | A kind of high frequency clock signal driving circuit |
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| Publication number | Publication date |
|---|---|
| CN103762946B (en) | 2017-03-15 |
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Address after: 430074, No. 88, postal academy road, Hongshan District, Hubei, Wuhan Patentee after: Wuhan post and Telecommunications Science Research Institute Co., Ltd. Address before: 430074, No. 88, postal academy road, Hongshan District, Hubei, Wuhan Patentee before: Wuhan Inst. of Post & Telecom Science |
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