CN103762251A - Bigrid optoelectronic thin film transistor, pixel circuit and pixel array - Google Patents
Bigrid optoelectronic thin film transistor, pixel circuit and pixel array Download PDFInfo
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- 239000010409 thin film Substances 0.000 title abstract description 26
- 230000005693 optoelectronics Effects 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 6
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000003491 array Methods 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 23
- 238000001514 detection method Methods 0.000 abstract description 17
- 230000006698 induction Effects 0.000 abstract description 6
- 230000003321 amplification Effects 0.000 abstract description 4
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 4
- 238000003860 storage Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 50
- 239000010408 film Substances 0.000 description 31
- 238000003384 imaging method Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 206010028980 Neoplasm Diseases 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004204 blood vessel Anatomy 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000012631 diagnostic technique Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 210000000936 intestine Anatomy 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 210000005075 mammary gland Anatomy 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The invention provides a bigrid optoelectronic thin film transistor capable of being used for indirect detecting type digital X-ray detectors. In pixel units for indirect X-ray detecting, optoelectronic detecting elements and thin film transistors for signal reading are integrated in the bigrid optoelectronic thin film transistor. The bigrid optoelectronic thin film transistor can achieve the on-off and signal amplification performance of the thin film transistors, and can also achieve the induction function of optoelectronic transistors and the storage function of signal charges. According to the scheme, the bigrid optoelectronic thin film transistor has the advantages of being high in signal to noise ratio and resolution ratio, simple in manufacturing technique and high in integrity degree, pixel areas can be utilized fully, and high-sensitivity detection can be achieved.
Description
Technical field
The present invention relates to a kind of structure, preparation technology and image element circuit of bigrid photo tft.
Background technology
X-ray imaging is one of diagnostic techniques of the most generally applying of hospital.Picture Chest X-rays, mammary gland is saturating, and blood vessel instrument and stomach and intestine instrument etc. has all been widely used in medical practice, becomes the important tool that helps diagnosis sufferer.In recent years, the development of flat panel display had driven flourish for the X-ray plane imaging technique of biomedical imaging, and it has formed an important branch in biomedical imaging field.At present, digital flat panel x-ray imaging instrument puts goods on the market, and becomes the strong competitor of traditional X-ray radial imaging technology.Its outstanding advantage is digitlization, high sensitivity and high-resolution etc.These advantages for help doctor carry out disease particularly the early stage Accurate Diagnosis of cancer played important function.
A digital X-ray plane imager mainly comprises X-ray tube, digital flat-panel detector, and Digital Image Processing computer.Wherein digital flat-panel detector is core.It has not only determined the imaging capability of system, has also accounted for more than 50% cost.
Digital flat-panel detector is comprised of pel array and peripheral circuit, and wherein pixel is its elementary cell, and it can be subdivided into again detection sensor and signaling switch two large divisions.Wherein detection sensor part has determined the performance of pixel and even whole array to a great extent, is part most crucial in digital flat-panel detector.
According to the principle of surveying, for the digital flat-panel detector of X-radial imaging, can be divided into direct detection type and two kinds of detectings indirectly.Direct detection type is that X-ray is directly converted to signal of telecommunication output; Indirectly surveying is first X-ray to be converted to visible light signal, then light signal is being changed into the signal of telecommunication.Wherein, detecting is the groundwork pattern of the digital flat-panel detector employing of current X-radial imaging indirectly.The present invention is mainly for the pixel technique in indirect detecting X-ray digital flat-panel detector.
The detection pixel unit of existing indirect detecting X-ray digital flat-panel detector can be divided into three types at present:
1), as Fig. 1, by photodiode, make sensing unit and coordinate switching thin-film transistor (ThinFilm Transistor-TFT);
2), as Fig. 2, by the photoconductive sensing unit of metal-semiconductor-metal (MSM), coordinate switching TFT;
3), as Fig. 3, by photo tft, coordinate switching TFT.
In above-mentioned detection pixel unit, be responsible for the element of visible ray detection (as photodiode, MSM photoconduction or photo tft) with the switching thin-film transistor of responsible signal-obtaining be what to separate, the poor-performing that causes pixel, sensitivity is lower, complex manufacturing technology, integrated level is low.This pixel cell for prior art, need to make improvements.
Summary of the invention
The invention reside in overcome prior art shortcoming in deficiency, the bigrid photo tft that a kind of switch performance is strong, integrated level is high, highly sensitive pixel technique is provided.
The present invention realizes by following technical scheme: a kind of bigrid photo tft, comprising: substrate, dark grid, the first dielectric layer, channel layer, source electrode, drain electrode, the second dielectric layer and photogate.This dark grid is arranged on this substrate.This first dielectric layer is arranged on this substrate and covers this dark grid.This source electrode is arranged on this first dielectric layer and contacts with the two ends of this first dielectric layer accordingly with this drain electrode.This channel layer is arranged on this first dielectric layer and covers this source electrode and this drain electrode.This second dielectric layer is arranged on this channel layer.This photogate is arranged on this second dielectric layer.Wherein, this photogate is made by the transparent electrode material conducting electricity, and this dark grid is made by metal or metal alloy.Than prior art, the present invention proposes a kind of bigrid photo tft for photodetection circuit, the innovation of its maximum is that detection sensor unit is integrated in a bigrid photo tft with signal-obtaining transistor.Both utilized the switch performance of thin-film transistor, and also utilized inducing function and the enlarging function of phototransistor, closing three is one.The sharpest edges of employing double-gate film phototransistor have been to save the space of switching thin-film transistor, have realized larger pixel filling ratio, and then have improved sensitivity.In addition, the preparation technology of device is fairly simple, and integrated ratio is easier to, and effectively reduces preparation cost.Image element circuit is simple, and a device just can complete from induction, and signal storage, to the overall process of signal-obtaining output.And, utilize the enlarging function of double-gate film transistor itself, can realize low dosage, highly sensitive active pixel (Active Pixel) X-X-ray detection X.
Further, this substrate is that glass substrate or flexible base, board are as plastics or stainless sheet steel.
Further, this photogate comprises indium tin oxide, indium-zinc oxide, aluminium-doped zinc oxide or semitransparent thin film metal, and this dark grid comprises molybdenum, chromium or aluminium etc. or its alloy.By the optimal design to material, can reach the optical coupled between this transparent conductive material and dielectric material, improve photoelectric conversion efficiency.
Further, this channel layer is made and to be formed or to adopt other semiconductor film material as oxide etc. by amorphous silicon.
Further, this first dielectric layer and this second dielectric layer are made and are formed by silicon oxide film or silicon nitride film material.Also can adopt other thin-film dielectric material as aluminium oxide, titanium oxide and hafnium oxide etc.
Further, the thickness range of this first dielectric layer and this second dielectric layer is 10 nanometers to 1 micron.The dielectric layer of this material and thickness, optically, it have higher light transmittance and and transparent electrode material between good optical coupled, in electricity, it will meet the requirement of pixel storage capacitor, meet the requirement of bottom switch thin-film transistor to switching speed, and meet the normal running to the abundant absorption of light and assurance switching thin-film transistor.
Further, the thickness range of this channel layer is 50 nanometers to micron.Need to both meet the absorption to light, also meet the requirement of electricity.
Further, also comprise the anti-reflection film being arranged in photogate, this anti-reflection film is single or multiple lift structure.Object is to reduce the light loss of light in transmitting procedure.
Another object of the present invention is to provide a kind of image element circuit and pel array of applying above-mentioned bigrid photo tft.
A kind of image element circuit comprises an above-mentioned bigrid photo tft, resets and hold, read end, offset side and data output end; This end of resetting is electrically connected to transistorized photogate, and this reads end and is electrically connected to transistorized dark grid, and this offset side is electrically connected to transistorized drain electrode, and this data output end is electrically connected to transistorized source electrode.Further, this transistorized drain electrode and dark grid short circuit.Can save a port, simplify wiring.
A pel array, comprises a plurality of above-mentioned a kind of image element circuits, the corresponding pixel of transistor of each image element circuit; Wherein, the replacement end with a line image element circuit is electrically connected to mutually; The end that reads with a line image element circuit is electrically connected to mutually; The data output end of same row image element circuit is electrically connected to mutually; During scanning, read the row that end selects to need scanning element point, data output end is exported the signal of selecteed pixel in each row.
Core of the present invention is double-gate film phototransistor, and not being both of traditional double-gate film transistor maximum: 1) introduce a photogate; 2) thickness of optimization channel layer has met optoelectronic induction and switching function simultaneously; 3) device operation is simple, mainly adapts to the requirement of optoelectronic induction.
Accompanying drawing explanation
Fig. 1 is the detection pixel unit circuit that photodiode coordinates TFT
Fig. 2 is the detection pixel unit circuit that photoconduction coordinates TFT
Fig. 3 is the detection pixel unit circuit that photo tft coordinates TFT
Fig. 4 is one of sectional structure chart of double-gate film phototransistor
Fig. 5 be double-gate film phototransistor sectional structure chart two
Fig. 6 absorbs to improve thin channel layer by extending channel width and source electrode in double gate transistor
Fig. 7 is that the typical case of bigrid photo tft prepares processing procedure.
Fig. 8 is double gate transistor image element circuit
Fig. 9 is the sequential of image element circuit
Figure 10 is the bigrid image element circuit that is reduced to three ports
Figure 11 is the representational 3X3 pel array based on bigrid photo tft
Figure 12 is the optics picture of amorphous silicon double-gate film phototransistor
Figure 13 is transfer characteristic curve and the output characteristic curve of amorphous silicon double-gate film phototransistor
Figure 14 is the output characteristic curve of amorphous silicon double-gate film phototransistor under different illumination intensity
Figure 15 is the signal response curve of amorphous silicon double-gate film phototransistor when light and shade alternately changes
Figure 16 is the signal response curve of amorphous silicon double-gate film phototransistor to intensity of illumination
Figure 17 is the indirect X-ray detector based on bigrid photo tft
Referring to drawings and the specific embodiments, the invention will be further described.
Embodiment
Refer to Fig. 4, it is one of sectional structure chart of a kind of bigrid photo tft of the present invention.Described bigrid photo tft comprises substrate 1, dark grid 2, the first dielectric layer 3, source electrode 4, drain electrode 5, channel layer 6, the second dielectric layer 7 and photogate 8.This substrate 1 can be glass substrate, plastic base or other substrates; In the present invention, adopt glass substrate.This dark grid 2 is arranged on this substrate 1, and it is made by metal or metal alloy, molybdenum, chromium or aluminium etc. or its alloy.This first dielectric layer 3 is arranged on this substrate 1 and covers this dark grid 2.This source electrode 4 is arranged on this first dielectric layer 3 and contacts with the two ends of this first dielectric layer 3 accordingly with this drain electrode 5; This channel layer 6 is arranged on this first dielectric layer 3 and covers this source electrode 4 and this drain electrode 5; In the present invention, this channel layer 6 forms by amorphous silicon.This second dielectric layer 7 is arranged on this channel layer 6.This photogate 8 is arranged on this second dielectric layer 7, and it is made by the transparent electrode material conducting electricity, and comprises indium tin oxide, indium-zinc oxide, aluminium-doped zinc oxide film or semitransparent thin film metal.
The operation principle of bigrid photo tft is as follows: this bigrid photo tft is a four-terminal device, by photogate 8, and dark grid 2, source electrode 4 and drain electrode 5 form.The photogate 8 that is positioned at top, principal security luminous energy enters inductive layer smoothly.The thin-film transistor at top can be regarded a Metal-oxide-semicondutor (MetalOxideSemiconductor-MOS) electric capacity as.Thin film transistor of bottom grid electrode mainly plays the effect of switch, reading and amplifying for signal.Light is injected from transparent optical grid 8 tops, by channel layer 6, absorbed, form a large amount of charge inducings, photoelectron, under the effect of top light grid back bias voltage, is enriched in bottom, when bottom switch thin-film transistor is opened, a large amount of photoelectrons just can be exported, and these photoelectrons can utilize the transistorized amplification of bottom thin film, is further amplified, in other words, bottom thin film transistor is equivalent to an embedded internal amplifier.The thickness of raceway groove can pass through careful design, meets the absorption to light, also meets the requirement of electricity.In order to reduce the light loss of light in transmitting procedure, can on photogate 8, introduce antireflection anti-reflection film, increase optical transmission, reduce the light loss causing because of boundary reflection, antireflection anti-reflection film can be design individual layer or multilayer; Also can utilize the light of some specific wavelengths is carried out to filtering realization for the transmission of the photon of one or more specific wavelengths, and not allow the light transmission of other wavelength.The design of this part of optical coupled also needs to consider to be positioned at the optical characteristics of the X ray conversion screen material at top, such as luminous and refraction etc.
As a variant embodiment of the present invention, bigrid photo tft of the present invention photogate 8 can be arranged on substrate 1, as shown in Figure 5, wherein, this photogate 8 is arranged on this substrate 1 its cross-section structure; This first dielectric layer 3 is arranged on this substrate 1 and covers this photogate 8; This source electrode 4 and this drain electrode 5, be arranged on this first dielectric layer 3 and contact with the two ends of this first dielectric layer 3 accordingly; This channel layer 6 is arranged on this first dielectric layer 3, and covers this source electrode 4 and this drain electrode 5; This second dielectric layer 7, this is arranged on this channel layer 6; This dark grid 2 is arranged on this second dielectric layer 7.Because photogate 8 is for induction light, in the present embodiment, substrate 1 must adopt the strong glass substrate 1 of light transmission.The transistorized principle of the present embodiment is identical with a upper embodiment, and light is injected from bottom glass substrate 1, through photogate 8, after being absorbed, produces photoelectron by channel layer 6, utilizes the amplification of top transistor and the output that switching function is realized signal.Equally, in order to reduce light loss, can between glass substrate 1 and photogate 8, introduce the material of antireflection or index matching.
Except above two basic structures, in some situation, the thickness of channel layer 6 must very thinly could meet some and specifically apply, photon just can not be by fully effective absorption like this, in order to improve the absorption to photon, can adopt the method that extends channel width and utilize metal-drain 5 reflections, as shown in Figure 6.
The structure of take in embodiments of the invention one is example, and Fig. 7 is the typical processes of preparing bigrid photo tft.Being described below of processing step:
(a) as Fig. 7 a, on transparent glass substrate 1, deposit dark grid 2 materials, thickness is 50 to 300nm; By photoetching method, define dark grid 2 figures; By lithographic method, form dark grid 2.
(b) as Fig. 7 b,, deposition gate insulator layer material, thickness is 50 to 300nm.
(c) as Fig. 7 c, sedimentary origin, drain electrode material, thickness is 50 to 300nm; By photoetching method, define source, drain electrode figure; By lithographic method, form source, drain electrode.
(d) as Fig. 7 d, the amorphous silicon hydride of dopant deposition, thickness is 30 to 100nm; By photoetching method, define ohmic contact layer pattern; By lithographic method, form ohmic contact layer.
(e) as Fig. 7 e, the amorphous silicon hydride of deposition intrinsic, thickness is 50 to 500nm; By photoetching method, define silicon island; By lithographic method, form silicon island.
(f) as Fig. 7 f, deposition gate insulator layer material, thickness is 50 to 300nm.
(g) as Fig. 7 g, deposition photogate 8 materials, thickness is 50 to 300nm; By photoetching method, define photogate 8 figures, by lithographic method, form photogate 8.
(h) as Fig. 7 h, deposition protective layer material, thickness is 50 to 300nm; By photoetching method, define perforate figure; By lithographic method perforate.
Refer to Fig. 8, it is the image element circuit figure of application a kind of bigrid photo tft of the present invention.This image element circuit has the end of replacement A, reads end B, offset side C and data output end D.This end A that resets is electrically connected to transistorized photogate 8, and this reads end B and is electrically connected to transistorized dark grid 2, and this offset side C is electrically connected to transistorized drain electrode 5, and this data output end D is electrically connected to transistorized source electrode 4.
Refer to Fig. 9, it is the sequential schematic diagram of this image element circuit.The operation of pixel can be divided into three phases: S1: reset; S2: integrated; S3: read.At reset phase, photogate 8 adds malleation or zero-pressure, and top transistor is in forward bias, and dark grid 2 adds negative pressure, and bottom transistor is in reverse biased, and drain electrode 5 is in negative pressure state, and the electric charge of top mos capacitance is cleared.At this time, whole pixel is standby; Then at integration phase, photogate 8 adds negative pressure, and top transistor is in reverse biased, and dark grid 2 adds negative pressure, and bottom transistor is in reverse biased, and drain electrode 5 is still in negative pressure state, and top mos capacitance starts charging, and the quantity of electric charge produces and increases with photoelectron; Then be and then the stage of reading, keep the negative pressure state of photogate 8, scotomete starts to apply malleation, and drain electrode 5 also starts to apply malleation, now, the photoelectron in mos capacitance starts under electric field action, outwards output, completes the transfer of electric charge and the operation of the data reading of a pixel.
Can find out that reading end B is consistent with the action of the end C that resets, in order to simplify the wiring of circuit, can as shown in figure 10, with drain electrode 5 short circuits, can reduce by a port by the dark grid of bottom 2 like this.
Indirectly X-ray detector mainly forms by X ray signal being converted to the conversion screen of visible light signal and detection array that numerous photodetection pixel forms.Wherein, a double-gate film transistor forms a pixel, and each single pixel works alone, and by photoelectric effect, light signal is converted to the signal of telecommunication.
Refer to Figure 11, it is the circuit diagram of a kind of pel array of the present invention.In the present embodiment, take 3x3 pel array as example.The corresponding pixel of transistor of each image element circuit; Wherein, the replacement end A with a line image element circuit is electrically connected to mutually; The end B that reads with a line image element circuit is electrically connected to mutually; The data output end D of same row image element circuit is electrically connected to mutually; During scanning, read the row that end B selects to need scanning element point, data output end D exports the signal of selecteed pixel in each row.The array that is comprised of thousands of pixels coordinates the conversion screen that converts X-ray to light signal just to form the digital flat panel X-ray detector of indirect conversion.According to the requirement of different digital X-radial imaging, can design the number of different row and columns to meet the demand of digital detector for different Biologic Medical Images.
The PRELIMINARY RESULTS of the device detection of double-gate film phototransistor of the present invention is as follows:
Adopt the typical processes figure for preparing bigrid photo tft shown in Fig. 7, adopt amorphous silicon to produce the double-gate film phototransistor of structure as shown in Figure 5 as channel layer 6.Figure 12 is its optical microscope photograph.Figure 13 is transfer characteristic curve and the output characteristic curve of amorphous silicon double-gate film phototransistor, wherein, and V
dGfor dark grid voltage, I
dfor drain electrode output current, V
pGfor photogate voltage, V
dfor drain voltage.By Figure 13, can be seen, its transfer characteristic and output characteristic are similar with general single grid thin-film transistor.
Under certain illumination condition, when photogate 8 is in reverse biased (V
pG=-1V), the signal of amorphous silicon double-gate film phototransistor strengthens obviously, as shown in figure 14, can find out that current-voltage transfer characteristic curve moves to back bias voltage direction along with the enhancing of illumination, the transistorized threshold voltage of top film that proved illumination effect.So in opening, the transistorized electric current of top film is exported the direct ratio that is varied to threshold voltage, that is to say under light conditions, output current is through the signal amplification of thin-film transistor.
Figure 15 is top film transistor (V under opening
dG=20V), the time response of photoelectric current.Under same illumination condition, photoelectric respone has repeatability.
Figure 16 is top film transistor (0.61Lux is to 2.71Lux white light) under different illumination conditions, the situation of change of its photoelectric current.Can find out, photoelectric current and intensity of illumination are certain linear relationship.
The application of above test result preliminary proof double-gate film transistor in photodetection field is feasible.Bigrid photo tft combines with X ray conversion screen 9 by indirect X-ray detector of formation, as shown in figure 17.
Than prior art, the present invention proposes a kind of bigrid photo tft for photodetection circuit, the innovation of its maximum is that detection sensor unit is integrated in a bigrid photo tft with signal-obtaining transistor.Both utilized the switch performance of thin-film transistor, also utilized inducing function and the memory function of phototransistor, united two into one.Adopting the sharpest edges of double-gate film phototransistor is to have saved space, has realized larger pixel filling ratio, and then has improved sensitivity and resolution.In addition, the preparation technology of device is fairly simple, and integrated ratio is easier to, and effectively reduces preparation cost.Image element circuit is simple, and a device just can complete from induction, and signal storage, to the overall process of signal-obtaining output.And, utilize the enlarging function of double-gate film transistor itself, can realize low dosage, highly sensitive X-X-ray detection X.Can think that this design is an active pixel circuit that single thin-film transistor forms.
These are only preferred forms of the present invention, not in order to limit the present invention.All foundations content disclosed by the invention, some identical, replacement schemes that those of ordinary skill in the art can expect apparently, all should fall into protection scope of the present invention.
Claims (12)
1. a bigrid photo tft, is characterized in that comprising:
Substrate;
Dark grid, is arranged on this substrate; This dark grid is made by metal or metal alloy;
The first dielectric layer, is arranged on this substrate and covers this dark grid;
Source electrode and drain electrode, be arranged on this first dielectric layer and contact with the two ends of this first dielectric layer accordingly;
Channel layer, is arranged on this first dielectric layer and covers this source electrode and this drain electrode;
The second dielectric layer, is arranged on this channel layer;
Photogate, is arranged on this second dielectric layer;
Wherein, this photogate is made by the transparent electrode material conducting electricity.
2. a kind of bigrid photo tft according to claim 1, is characterized in that: this substrate is glass or plastic base.
3. a kind of bigrid photo tft according to claim 2, is characterized in that: this photogate comprise indium tin oxide, Indium ?oxide, aluminium-doped zinc oxide or film metal, this dark grid comprises molybdenum, chromium or aluminium etc. or its alloy.
4. a kind of bigrid photo tft according to claim 3, is characterized in that: this channel layer is made and formed by amorphous silicon or other semiconductor film material.
5. a kind of bigrid photo tft according to claim 4, is characterized in that: this first dielectric layer and this second dielectric layer are made and formed by silicon oxide film or silicon nitride film material.
6. a kind of bigrid photo tft according to claim 5, is characterized in that: the thickness range of this first dielectric layer and this second dielectric layer is 10 nanometers to 1 micron.
7. a kind of bigrid photo tft according to claim 6, is characterized in that: the thickness range of this channel layer is 50 nanometers to micron.
8. a kind of bigrid photo tft according to claim 7, is characterized in that: also comprise the anti-reflection film being arranged in photogate, this anti-reflection film is single or multiple lift structure.
9. a bigrid photo tft, is characterized in that comprising:
Substrate, this substrate is glass substrate;
Photogate, is arranged on this substrate;
The first dielectric layer, is arranged on this substrate and covers this photogate;
Source electrode and drain electrode, be arranged on this first dielectric layer and contact with the two ends of this first dielectric layer accordingly;
Channel layer, is arranged on this first dielectric layer and covers this source electrode and this drain electrode;
The second dielectric layer, is arranged on this channel layer;
Dark grid, is arranged on this second dielectric layer;
Wherein, this photogate is made by the transparent electrode material conducting electricity, and this dark grid is made by metal or metal alloy.
10. an image element circuit, is characterized in that: this image element circuit comprise as claim 1 to bigrid photo tft, the end of resetting as described in arbitrary claim in claim 9, read end, offset side and data output end; This end of resetting is electrically connected to transistorized photogate, and this reads end and is electrically connected to transistorized dark grid, and this offset side is electrically connected to transistorized source electrode, and this data output end is electrically connected to transistorized drain electrode.
11. a kind of image element circuits according to claim 10, is characterized in that: this transistorized source electrode and dark grid short circuit.
12. 1 kinds of pel arrays, is characterized in that: comprise a plurality of a kind of image element circuits as described in claim 11, the corresponding pixel of transistor of each image element circuit; Wherein, the replacement end with a line image element circuit is electrically connected to mutually; The end that reads with a line image element circuit is electrically connected to mutually; The data output end of same row image element circuit is electrically connected to mutually; During scanning, read the row that end selects to need scanning element point, data output end is exported the signal of selecteed pixel in each row.
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