CN103715317B - Light-emitting diode assembly - Google Patents
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- CN103715317B CN103715317B CN201210370912.9A CN201210370912A CN103715317B CN 103715317 B CN103715317 B CN 103715317B CN 201210370912 A CN201210370912 A CN 201210370912A CN 103715317 B CN103715317 B CN 103715317B
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- 150000004767 nitrides Chemical group 0.000 claims abstract description 96
- 239000002105 nanoparticle Substances 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 32
- 230000007547 defect Effects 0.000 claims description 14
- 239000002096 quantum dot Substances 0.000 claims description 8
- 230000005641 tunneling Effects 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 claims description 4
- 238000005728 strengthening Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 230000000712 assembly Effects 0.000 claims 5
- 238000000429 assembly Methods 0.000 claims 5
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 1
- 150000002830 nitrogen compounds Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 60
- 230000000694 effects Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- NTQGILPNLZZOJH-UHFFFAOYSA-N disilicon Chemical compound [Si]#[Si] NTQGILPNLZZOJH-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- -1 silicon nitride Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
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- H01L33/08—
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- Led Devices (AREA)
Abstract
A kind of light-emitting diode assembly, including at least one light emitting diode.Each light emitting diode includes the first light emitting diode, the second light emitting diode and IV group-III nitride structure.IV group-III nitride structure as tunnel junctions between the first light emitting diode and the second light emitting diode.IV group-III nitride structure is rich in IV race element, and includes at least one IV group iii nitride layer, and is positioned at multiple IV races nano-particle of IV group iii nitride layer.
Description
Technical field
The present invention relates to a kind of light-emitting diode assembly, especially with regard to one, there is IV group-III nitride structure
Stacked light emitting diodes.
Background technology
In order to improve the luminous efficiency of light emitting diode (LED), a kind of method is to use tunnel junctions (tunnel
Junction) two or multiple light emitting diodes are stacked up.Superposition light emitting diode is than single light-emitting diodes
Pipe radiates more light, thus improves brightness.Use the tunnel junctions also can the dispersion of current strengthening
(spreading) so that in active layer, more carrier can be carried out in conjunction with (recombination).Additionally,
The more same number of single light emitting diode of superposition light emitting diode has less electrode contact, not only may be used
Save space, and caused electromigration (electromigration) problem can be reduced.
A kind of method being conventionally formed tunnel junctions is to use heavy doping technology, such as United States Patent (USP)
US6,822,991, entitled " include light-emitting device (the Light Emitting Devices Including of tunnel junctions
Tunnel Junctions) ", its tunnel junctions uses InGaN (InGaN).It is said that in general, InGaN
(InGaN) to the quality having had, its growth thickness not can exceed that 2 nanometers (nm).Above-mentioned specially
In profit document, p++ heavy doping InGaN (InGaN) layer thickness included by its tunnel junctions is up to 15
Nanometer.Actually, such thickness to be reached and to keep suitable quality be hardly possible.
Therefore, how to reduce InGaN (InGaN) thickness and tunnelling effect can be reached, being current research and development
Important directions.
The another kind of method being conventionally formed tunnel junctions is to use polarization (polarization) technology, such as the U.S.
Patent 6,878,975, entitled " tunneling structure (the Polarization Field Enhanced that polarization field strengthens
Tunnel Structures)”.During by polarization to make tunneling structure (such as single-layer silicon nitride indium gallium), indium
(In) concentration is at a relatively high (being greater than 20%), and thickness wants thick (for example, at least 10 nanometer),
The tunneling structure formed has the shortcoming of extinction, and stress is concentrated in junction (such as GaN/InGaN
Junction) on so that among stacked light emitting diodes, the growth temperature of the light emitting diode of top can not be the highest,
Otherwise stress can increase along with temperature and cause tunnelling to lose efficacy.
Therefore, need the light-emitting diode assembly proposing a kind of novelty badly, in order to solve above-mentioned tradition tunnel junctions
Problem.
Summary of the invention
In view of above-mentioned, one of purpose of the embodiment of the present invention is to be to propose a kind of tool IV group-III nitride
The light-emitting diode assembly of structure, by quantum dot auxiliary tunnelling, avalanche effect and/or zener effect
Promote tunnelling usefulness.
According to embodiments of the present invention, light-emitting diode assembly comprises at least one light emitting diode, this
Optical diode unit comprises the first light emitting diode, the second light emitting diode and IV group-III nitride structure.The
One light emitting diode comprises n-side nitride semiconductor layer, the first active layer and p-side nitride semiconductor layer；
Second light emitting diode comprises n-side nitride semiconductor layer, the second active layer and p side nitride-based semiconductor
Layer.IV group-III nitride structure is rich in IV race element, and comprises at least one IV group iii nitride layer, and
It is positioned at multiple IV races nano-particle of IV group iii nitride layer.Wherein, IV group-III nitride structure is positioned at
Between one light emitting diode and the second light emitting diode, as tunnel junctions.
Accompanying drawing explanation
Fig. 1 illustrates the sectional view of the light emitting diode of the embodiment of the present invention.
Fig. 2 A illustrates the sectional view of the light emitting diode of another embodiment of the present invention.
Fig. 2 B illustrates the sectional view of the light emitting diode of another embodiment of the present invention.
Fig. 3 illustrates the sectional view of the light emitting diode of further embodiment of this invention.
Fig. 4 illustrates the sectional view of the light emitting diode of further embodiment of this invention.
Fig. 5 A illustrates the energy level diagram of avalanche effect.
Fig. 5 B illustrates the energy level diagram of zener effect.
Fig. 6 illustrates the schematic perspective view of the light-emitting diode assembly of the embodiment of the present invention.
Main element symbol description
100: light emitting diode
200: light emitting diode
201: light emitting diode
300: light emitting diode
400: light emitting diode
1000: light-emitting diode assembly
1: the first light emitting diode
11:n side nitride semiconductor layer
12: the first active layers
13:p side nitride semiconductor layer
2:IV group-III nitride structure
21:IV group iii nitride layer
22:IV race nano-particle
3: the second light emitting diodes
31:n side nitride semiconductor layer
32: the second active layers
33:p side nitride semiconductor layer
4: nitride defect layer
5A:P type intermediate layer
5B:N type intermediate layer
60: light emitting diode
62: bonding wire
64: substrate
65: the first electrodes
67: the second electrodes
69: power supply unit
Detailed description of the invention
Fig. 1 illustrates the sectional view of the light emitting diode 100 of the embodiment of the present invention.One or more
Optical diode unit 100 can form light-emitting diode assembly.This view only illustrates related to the present embodiment
Composition component, therefore, can insert other extra levels according to practical application request between shown level.
Additionally, the size of each composition component is not drawn according to actual ratio in view.
In the present embodiment, light emitting diode 100 the most sequentially includes the first light emitting diode
1, IV group-III nitride structure 2 and the second light emitting diode 3.In other words, IV group-III nitride structure 2
Between the first light emitting diode 1 and the second light emitting diode 3.
As it is shown in figure 1, the first light emitting diode 1 the most sequentially includes n-side nitride semiconductor layer
11, the first active layer 12 and p-side nitride semiconductor layer 13.Second light emitting diode 3 from bottom to top depends on
Sequence includes n-side nitride semiconductor layer the 31, second active layer 32 and p-side nitride semiconductor layer 33.
IV group-III nitride structure 2 is positioned at the p-side nitride semiconductor layer 13 of the first light emitting diode 1 and second
Between the n-side nitride semiconductor layer 31 of optical diode 3, and as tunnel junctions, thus luminous by first
Diode 1 is superimposed with the second light emitting diode 3.
In the present embodiment, IV group-III nitride structure 2 includes IV group-III nitride, such as silicon nitride, and
Rich in (rich) IV race element, such as rich in silicon (silicon-rich).In this manual, so-called rich
The element containing IV race refers to IV race element and nitrogen element ratio in Chemical Measurement (stoichiometry)
More than 3/4.As a example by silicon, what is called refers to, rich in element silicon, the atom that IV group-III nitride structure 2 is siliceous
Quantity is than silicon nitride (Si3N4The atomic quantity of the silicon contained by) is many.IV race rich in IV race element
The formation of nitride structure 2, can in low temperature (such as 400-1000 DEG C) chemical vapor deposition method,
By sedimentary origin and the sedimentary origin of nitrogen element of control IV race element, epitaxy is formed.With the nitridation rich in silicon
As a example by silicon, Metalorganic Chemical Vapor can be used to deposit (MOCVD) technique, by controlling element silicon
Sedimentary origin, such as silicomethane (silane, SiH4/H2) or Disilicoethane (disilane, Si2H6/H2), and nitrogen unit
The sedimentary origin of element, such as ammonia (ammonia, NH3), and it is epitaxially formed the silicon nitride rich in silicon.
The IV group-III nitride structure 2 of the present embodiment includes at least one IV group iii nitride layer 21, Yi Jiwei
Multiple IV races nano-particle 22 in IV group iii nitride layer 21.In the present embodiment, IV race nanometer
The average-size of granule 22 is less than or equal to 20 nanometers (nm), but is not limited to this.It is preferable to carry out one
In example, the distribution density (distribution density) of IV race nano-particle 22 is 1x1010/ square centimeter is extremely
1x1014/ square centimeter.The IV race nano-particle 22 of the present embodiment can be in monocrystalline or polycrystalline state, therefore
Can be described as IV race nanocrystal.
Above-mentioned IV group-III nitride structure 2 can be Spatial continual, it is also possible to be that space is discontinuous, example
Such as the island areas not being fully connected.The thickness of the IV group-III nitride structure 2 of the present embodiment be smaller than or etc.
In 30 nanometers, and the average-size of IV race nano-particle 22 is less than the thickness of IV group-III nitride structure 2.
From energy gap (energy gap), the energy gap of IV race nano-particle 22 is less than IV group-III nitride
The energy gap of layer 21.The size of IV race nano-particle 22 is the biggest, then the energy gap of IV race nano-particle 22 is more
Little, thus more can be less than the energy gap of IV group iii nitride layer 21.
From quantum (quantum), the IV race nano-particle 22 of the present embodiment has quantum dot
(quantum dot) function.When quantum dot size and density are sufficiently large, IV group-III nitride structure 2 is i.e.
Tunneling structure can be assisted as quantum dot.The size of quantum dot is the biggest, and its energy gap is the least.Work as quantum dot
Energy gap less than the energy gap of adjacent I V group iii nitride layer 21 time, produced usefulness is similar to quantum well
The energy gap of (quantum well) is less than the neighbouring situation limiting (confine) layer.
Fig. 2 A illustrates the sectional view of the light emitting diode 200 of another embodiment of the present invention.Compared to
Light emitting diode 100 shown in Fig. 1, the light emitting diode 200 of the present embodiment also includes at least
Mononitride defect layer 4, adjacent to IV group-III nitride structure 2.As a example by Fig. 2 A, nitride defect
Layer 4 is positioned at below IV group-III nitride structure 2, but, in other embodiments, nitride defect layer 4
It is positioned at above IV group-III nitride structure 2.In an example, nitride defect layer 4 can be in low temperature (example
Such as 500-900 DEG C) under formed gallium nitride, its defect concentration is about 109～1011/ square centimeter.
Fig. 2 B illustrates the sectional view of the light emitting diode 201 of another embodiment of the present invention.Compared to
Light emitting diode 200 shown in Fig. 2 A, the nitride defect layer 4 of the present embodiment is in IV race
The centre of nitride structure 2.
Fig. 3 illustrates the sectional view of the light emitting diode 300 of further embodiment of this invention.Compared to figure
Light emitting diode 100 shown in 1, the light emitting diode 300 of the present embodiment also includes in p-type
Interbed 5A and N-type intermediate layer 5B.Wherein, this p-type intermediate layer 5A is positioned at IV group-III nitride structure
2 and first light emitting diode 1 p-side nitride semiconductor layer 13 between, and p-type intermediate layer 5A
Doping content more than the doping content of p-side nitride semiconductor layer 13 of the first light emitting diode 1.N
Type intermediate layer 5B is positioned at the n side nitride of IV group-III nitride structure 2 and the second light emitting diode 3 partly to be led
Between body layer 31, and the doping content of N-type intermediate layer 5B is more than the n side nitrogen of the second light emitting diode 3
The doping content of compound semiconductor layer 31.In one example, p-type intermediate layer 5A and N-type intermediate layer
5B can be gallium nitride, but is not limited to this.
The p-type intermediate layer 5A described in nitride defect layer 4 and Fig. 3 described in Fig. 2 A, Fig. 2 B,
N-type intermediate layer 5B can use same structure, and forms light emitting diode 400 as shown in Figure 4.
From carrier (that is, electronics and hole) produces, the IV group-III nitride structure 2 of the present embodiment
Can be as the structure (enhancing avalanche breakdown structure) strengthening avalanche breakdown.As
Avalanche effect energy level diagram shown in Fig. 5 A, when external reverse bias, free electron is by high electric field shadow
Ring and obtain kinetic energy, and then remove to clash into, destroy the atomic lattice of exhaustion region, produce extra electronics empty
Cave pair, and affected by electric field by produced electron hole, during movement, again clash into other
Lattice also produces more electron hole so that electronics is mobile toward top (namely second light emitting diode 3),
Hole is mobile toward lower section (namely first light emitting diode 1).As shown in Figure 4, aforementioned nitride defect layer
4 can provide free electron because of the defect of its lattice, and p-type intermediate layer 5A, N-type intermediate layer 5B
Bigger electric field can be provided because of its bigger doping content, be thus catalyzed or strengthen above-mentioned snowslide
Effect so that the IV group-III nitride structure 2 of the present embodiment can be as the structure strengthening avalanche breakdown.?
In the present embodiment, IV group-III nitride structure 2 can make light emitting diode (such as by avalanche effect
400, the 4th figure) electrical parameter (the most forward voltage Vf) there is positive temperature factor, that is, this electricity
Property parameter with temperature rise and increase.
In addition to avalanche effect, the IV group-III nitride structure 2 of the present embodiment also can have Zener (Zener)
Effect.Zener effect energy level diagram as shown in Figure 5 B, in two high doped p+(the p-type of such as Fig. 4
Intermediate layer 5A) and n+In the junction of (the N-type intermediate layer 5B of such as Fig. 4), when external reverse bias
Time, the conduction band E on the both sides of junctionCWith valency electricity band EVCan be very close to, make valency electricity band in p-type semiconductor
Electronics easily directly tunnelling in the conduction band of n-type semiconductor.Above-mentioned avalanche effect can be single with zener effect
Solely or simultaneously occur at the IV group-III nitride structure 2 of the present embodiment.
Fig. 6 illustrates the schematic perspective view of the light-emitting diode assembly 1000 of the embodiment of the present invention, and it comprises many
Individual light emitting diode 60, is arranged on substrate 64 with array pattern, therefore forms light emitting diode battle array
Row.Adjacent LED unit 60 the most electrically can be connected by its first electrode 65 or the second electrode 67
Connect, such as, be electrically connected with by bonding wire 62 or intraconnections, thus form a series connection and/or sequence in parallel.
As a example by tandem sequence, it is positioned at light emitting diode foremost 60 and the rearmost end luminescence two of tandem sequence
Pole pipe unit 60, the first electrode 65 and the second electrode 67 not being connected with other light emitting diodes 60
It is connected respectively to the two ends of power supply unit 69.Light emitting diode 60 shown in Fig. 6 can be Fig. 1
To the light emitting diode 100/200/201/300/400 of embodiment illustrated in fig. 4, wherein, the first electrode
The n side nitride of 65 the first light emitting diodes 1 being electrically connected with light emitting diode 60 foremost is partly led
Body layer 11；Second electrode 67 is electrically connected with the second light emitting diode 3 of rearmost end light emitting diode
P-side nitride semiconductor layer 33.
The foregoing is only the preferred embodiments of the present invention, the right being not limited to the present invention is wanted
Seek scope；All other is altered or modified without departing from the equivalence completed under the spirit disclosed in invention, all should
It is included in the range of the claim of the present invention.
Claims (15)
1. a light-emitting diode assembly, including:
At least one light emitting diode, this at least one light emitting diode includes:
First light emitting diode, this first light emitting diode include n-side nitride semiconductor layer,
First active layer and p-side nitride semiconductor layer；
Second light emitting diode, this second light emitting diode include n-side nitride semiconductor layer,
Second active layer and p-side nitride semiconductor layer；And
IV group-III nitride structure, it is rich in IV race element, and includes at least one IV race nitrogen
Compound layer, and it is positioned at multiple IV races nano-particle of this IV group iii nitride layer, this IV race
Nitride structure is positioned at described first light emitting diode and described second light-emitting diodes as tunnel junctions
Between pipe.
2. light-emitting diode assembly as claimed in claim 1, wherein, described IV group-III nitride
Structure is positioned at p-side nitride semiconductor layer and the institute of described first light emitting diode as tunnel junctions
State between the n-side nitride semiconductor layer of the second light emitting diode, thus luminous by described first
Diode is superimposed with described second light emitting diode.
3. light-emitting diode assembly as claimed in claim 1, wherein, described IV race nanometer
The average-size of grain is less than or equal to 20 nanometers.
4. light-emitting diode assembly as claimed in claim 1, wherein, described IV race nanometer
The distribution density of grain is 1x1010/ square centimeter is to 1x1014/ square centimeter.
5. light-emitting diode assembly as claimed in claim 1, wherein, described IV group-III nitride
Structure is the most discontinuous.
6. light-emitting diode assembly as claimed in claim 1, wherein, described IV group-III nitride
The thickness of structure is less than or equal to 30 nanometers.
7. light-emitting diode assembly as claimed in claim 1, wherein, described IV race nanometer
The energy gap of grain is less than the energy gap of described IV group iii nitride layer.
8. light-emitting diode assembly as claimed in claim 1, wherein, described IV group-III nitride
Structure is that quantum dot assists tunneling structure.
9. light-emitting diode assembly as claimed in claim 1, also includes at least one nitride
Defect layer, this nitride defect layer is adjacent to described IV group-III nitride structure.
10. light-emitting diode assembly as claimed in claim 1, also includes at least one nitride
Defect layer, this nitride defect layer is positioned in the middle of described IV group-III nitride structure.
11. light-emitting diode assemblies as claimed in claim 2, also include:
P-type intermediate layer, this p-type intermediate layer is positioned at described IV group-III nitride structure and described first
Between the p-side nitride semiconductor layer of light emitting diode, and the doping in described p-type intermediate layer
Concentration is more than the doping content of the p-side nitride semiconductor layer of described first light emitting diode；With
And
N-type intermediate layer, this N-type intermediate layer is positioned at described IV group-III nitride structure and described the
Between the n-side nitride semiconductor layer of two light emitting diodes, and the mixing of described N-type intermediate layer
Miscellaneous concentration is more than the doping content of the n-side nitride semiconductor layer of described second light emitting diode.
12. light-emitting diode assemblies as claimed in claim 1, wherein, described IV race nitrogenizes
Thing structure is the structure strengthening avalanche breakdown.
13. light-emitting diode assemblies as claimed in claim 12, wherein, described light-emitting diodes
The electrical parameter of pipe unit has positive temperature factor.
14. light-emitting diode assemblies as claimed in claim 2, also include:
First electrode, is electrically connected with the n-side nitride semiconductor layer of described first light emitting diode；
And
Second electrode, is electrically connected with the p-side nitride semiconductor layer of described second light emitting diode.
15. light-emitting diode assemblies as claimed in claim 14, arrange including with array pattern
Multiple described light emitting diode, wherein, adjacent described light emitting diode can lead to
Cross its first electrode or the second electrode is electrically connected to each other, thus form a tandem sequence and/or also
Connection sequence.
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| CN201210370912.9A CN103715317B (en) | 2012-09-28 | 2012-09-28 | Light-emitting diode assembly |
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| CN110383126B (en) | 2017-02-28 | 2024-05-24 | 慧与发展有限责任合伙企业 | Quantum dot semiconductor optical amplifier and quantum dot photoelectric detector |
| US10811549B2 (en) * | 2019-01-29 | 2020-10-20 | Hewlett Packard Enterprise Development Lp | Quantum-dot-based avalanche photodiodes on silicon |
| CN113257940B (en) * | 2020-02-13 | 2023-12-29 | 隆基绿能科技股份有限公司 | Laminated photovoltaic device and production method |
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