CN103698799A - High-definition digital X-ray flat panel detector - Google Patents
High-definition digital X-ray flat panel detector Download PDFInfo
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- CN103698799A CN103698799A CN201310627366.7A CN201310627366A CN103698799A CN 103698799 A CN103698799 A CN 103698799A CN 201310627366 A CN201310627366 A CN 201310627366A CN 103698799 A CN103698799 A CN 103698799A
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Abstract
The invention discloses a high-definition digital X-ray flat panel detector which comprises a protective layer, an electrode layer, an insulating layer, an X-ray semiconductor layer, an electronic closing layer, an amorphous selenium layer, a thin film transistor layer, a storage capacitor, a charge amplifier, a gate control circuit, a digital converter and a glass substrate. With the adoption of the mode, the high-definition digital X-ray flat panel detector eliminates image blurring caused by photoelectric scattering, ensures the quality of an image, and can be very reliable in a high-humidity and completely-exposed environment.
Description
Technical field
The present invention relates to digital imagery field, relate in particular to a kind of high definition digital X ray flat panel detector.
Background technology
The X ray flat panel detector circulating on current market is at home and abroad all that array detection technical development is got up based on amorphous silicon film transistor (Thin Film Transistor, TFT).From principle minute nothing more than being two types: a kind of is indirect energy conversion type, as Siemens, Philips, GE, the product of PerkinElmer company, a kind of is direct energy conrersion type, as HOLOGIC company product.
But because X ray need carry out visible ray conversion and will effectively transmit through scintillator, scintillator is transparent, the visible ray producing must have scattering of light, the visible ray that X ray produces at a pixel can exert an influence in adjacent amorphous silicon film transistor (a-Si+TFT) unit, will inevitably cause like this decline of X ray flat panel detector image quality, again because cesium iodide material is hygroscopic materials, when it absorbs airborne moisture and during deliquescence, the characteristic that can make scintillator, particularly image resolution ratio reduces greatly.
Summary of the invention
The technical matters that the present invention mainly solves is to provide a kind of high definition digital X ray flat panel detector, this high definition digital X ray flat panel detector not only can effectively increase picture quality, and also can be very reliable under the environment of high humility and exposure completely.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: high definition digital X ray flat panel detector, comprise: protective seam, electrode layer, insulation course, X ray semiconductor layer, electrons layer, amorphous selenium layer, tft layer, holding capacitor, charge amplifier, gating circuit, digital quantizer and glass substrate, described protective seam is connected with described electrode layer;
Described electrode layer is connected with described insulation course;
Described insulation course is connected with described X ray semiconductor layer;
Described X ray semiconductor layer is connected with described electrons layer;
Described electrons layer is connected with described amorphous selenium layer;
Described amorphous selenium layer is connected with tft layer;
Described tft layer is connected with described glass substrate in the mode of array;
Described holding capacitor, described charge amplifier, described gating circuit and described digital quantizer are connected with tft layer respectively.
In a preferred embodiment of the present invention, described protective layer material is PET.
In a preferred embodiment of the present invention, described electrode layer is added with the high pressure of 1-5kv.
In a preferred embodiment of the present invention, the thickness of amorphous selenium is 0.4-0.5mm.
The invention has the beneficial effects as follows: high definition digital X ray flat panel detector of the present invention not only can effectively increase picture quality, and also can be very reliable under the environment of high humility and exposure completely.
Accompanying drawing explanation
Fig. 1 is the structural representation of high definition digital X ray flat panel detector of the present invention.
In accompanying drawing, the mark of each parts is as follows: 1, protective seam; 2, electrode layer; 3, insulation course; 4, X ray semiconductor layer; 5, electrons layer; 6, amorphous selenium layer; 7, tft layer; 8, holding capacitor; 9, charge amplifier; 10, gating circuit; 11, digital quantizer; 12, glass substrate.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, thereby so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that, protection scope of the present invention is made to more explicit defining.
Refer to Fig. 1, the embodiment of the present invention comprises: high definition digital X ray flat panel detector, comprise: protective seam 1, electrode layer 2, insulation course 3, X ray semiconductor layer 4, electrons layer 5, amorphous selenium layer 6, tft layer 7, holding capacitor 8, charge amplifier 9, gating circuit 10, digital quantizer 11 and glass substrate 12, described protective seam 1 is connected with described electrode layer 2, described protective seam 1 material is PET, the heat distortion temperature of PET and long-term serviceability temperature are the highest in thermoplasticity general engineering plastic, because heat-resisting height, REINFORCED PET is flooded 10s in the solder bath of 250 ℃, be out of shape hardly also nondiscolouring, bending strength 200MPa, elastic modulus reaches 4000MPa, resistance to creep and fatigability are also fine, skin hardness is high, mechanical property and thermosetting plastics are close, and produce PET institute spent glycol than the price of producing butylene glycol used almost cheap half, so PET has very high cost performance.
Described electrode layer 2 is connected with described insulation course 3, described electrode layer 2 is added with the high pressure of 1-5kv, and described electrode layer 2 forms an electric field on described amorphous selenium layer 6 surfaces and makes X ray can only vertically pass described insulation course 3, described X ray semiconductor layer 4 and described electrons layer 5.
Described insulation course 3 is connected with described X ray semiconductor layer 4, and described X ray semiconductor layer 4 is connected with described electrons layer 5, and described electrons layer 5 is connected with described amorphous selenium layer 6.
Described amorphous selenium layer 6 is connected with tft layer 7, the thickness of described amorphous selenium 6 is 0.4-0.5mm, method by vacuum evaporation generates thin film by described amorphous selenium layer 6 on described tft layer 7, make it form an inseparable integral body, this integral body is directly transformed into electric signal by X ray.
Described tft layer 7 is connected with described glass substrate 12 in the mode of array, and described glass substrate 12 plays the effect of setting off to all material.
Described holding capacitor 8, described charge amplifier 9, described gating circuit 10 and described digital quantizer 11 are connected with described tft layer 7 respectively, the electric signal that described holding capacitor 8 storages change, described gating circuit 10 is controlled described tft layer conducting, described charge amplifier 9 amplifies output by electric charge, and described digital quantizer 11 forms digital picture after signal is changed.
Below the principle of work of a kind of high definition digital X ray flat panel detector of the present invention is described in detail.
Mode by tft layer 7 with array is placed in glass substrate 12, method by vacuum evaporation generates thin film by amorphous selenium layer 6 on tft layer 7, make it form an inseparable integral body, when injecting, X ray make it vertically pass insulation course 3 along direction of an electric field because electrode layer 2 has formed electric field on amorphous selenium layer 6 surfaces, X ray semiconductor layer 4, the final amorphous selenium layer 6 that arrives of electrons layer 5, amorphous selenium layer 6 is transformed into electric signal memory in holding capacitor 8 by X ray, pulse control gate control circuit 10 is by tft layer 7 conductings, electric charge memory in holding capacitor 8 is exported by charge amplifier 9, complete the conversion of photosignal, again through the conversion of digital quantizer 11, thereby formation digital picture, protective seam 1 make its high humility and the environment that exposes completely under also can be very reliable.
The foregoing is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or conversion of equivalent flow process that utilizes instructions of the present invention and accompanying drawing content to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (4)
1. high definition digital X ray flat panel detector, it is characterized in that, comprise: protective seam, electrode layer, insulation course, X ray semiconductor layer, electrons layer, amorphous selenium layer, tft layer, holding capacitor, charge amplifier, gating circuit, digital quantizer and glass substrate, described protective seam is connected with described electrode layer;
Described electrode layer is connected with described insulation course;
Described insulation course is connected with described X ray semiconductor layer;
Described X ray semiconductor layer is connected with described electrons layer;
Described electrons layer is connected with described amorphous selenium layer;
Described amorphous selenium layer is connected with tft layer;
Described tft layer is connected with described glass substrate in the mode of array;
Described holding capacitor, described charge amplifier, described gating circuit and described digital quantizer are connected with tft layer respectively.
2. high definition digital X ray flat panel detector according to claim 1, is characterized in that: described protective layer material is PET.
3. high definition digital X ray flat panel detector according to claim 1, is characterized in that: described electrode layer is added with the high pressure of 1-5kv.
4. high definition digital X ray flat panel detector according to claim 1, is characterized in that: the thickness of amorphous selenium is 0.4-0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310627366.7A CN103698799A (en) | 2013-12-02 | 2013-12-02 | High-definition digital X-ray flat panel detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310627366.7A CN103698799A (en) | 2013-12-02 | 2013-12-02 | High-definition digital X-ray flat panel detector |
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| CN103698799A true CN103698799A (en) | 2014-04-02 |
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| CN201310627366.7A Pending CN103698799A (en) | 2013-12-02 | 2013-12-02 | High-definition digital X-ray flat panel detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106491150A (en) * | 2016-11-01 | 2017-03-15 | 奕瑞影像科技（太仓）有限公司 | Flat panel detector carbon plate ground structure |
-
2013
- 2013-12-02 CN CN201310627366.7A patent/CN103698799A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106491150A (en) * | 2016-11-01 | 2017-03-15 | 奕瑞影像科技（太仓）有限公司 | Flat panel detector carbon plate ground structure |
| CN106491150B (en) * | 2016-11-01 | 2019-06-07 | 奕瑞影像科技（太仓）有限公司 | Flat panel detector carbon plate ground structure |
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Application publication date: 20140402 |