CN103632927B - The impedance matching methods of plasma etching system - Google Patents
The impedance matching methods of plasma etching system Download PDFInfo
- Publication number
- CN103632927B CN103632927B CN201310705224.8A CN201310705224A CN103632927B CN 103632927 B CN103632927 B CN 103632927B CN 201310705224 A CN201310705224 A CN 201310705224A CN 103632927 B CN103632927 B CN 103632927B
- Authority
- CN
- China
- Prior art keywords
- frequency
- source current
- impedance matching
- power
- impedance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of impedance matching methods of plasma etching system, described impedance matching methods comprises: provide plasma etching system, described plasma etching system comprises: impedance matching box, the input of described impedance matching box is electrically connected with source current and bias supply, the output of impedance matching box is electrically connected with reaction chamber, the link of described impedance matching box and source current is electrically connected with one end of voltage-to-current detector, and the described voltage-to-current detector other end is connected with source current by frequency adjustment control unit; Under source current and bias supply are operated in continuous power pattern simultaneously, the frequency of adjustment source current, obtains the first matching frequency; Change bias supply into pulsed power mode, using the reference frequency of the first matching frequency as the source current under bias supply pulse opening; When described bias supply changes pulse closed condition into by pulse opening, take reference frequency as benchmark, the frequency of increase or reduction source current obtains the second matching frequency.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of impedance matching methods of plasma etching system.
Background technology
In semiconductor processing, the technique importance in fabrication of semiconductor devices that plasma gas is correlated with is increasing, such as plasma etch process, reactive ion etching process etc.
Dual frequency plasma etching system generally comprises etching cavity, bias supply (biaspower) and source current (sourcepower), the higher such as 13MHZ of frequency of described source current, 27MHZ or more than 60Mhz, for in reaction chamber produce and maintain plasma simultaneously for controlling the density of plasma, the frequency of described bias supply is lower, typically as the radio-frequency power supply of 2Mhz, for controlling the direction of motion of plasma and entrained energy.Described bias supply and source current provide radio-frequency power supply by impedance matching box in reaction chamber.
In double-frequency synchronous pulse plasma etching system, bias supply and source current need to work in the pulsing mode simultaneously.The pulse power is adopted to compare with continuous power power supply, the problem such as ultraviolet radiation, charging damage, physical sputtering producing and may occur in the process of plasma can be reduced in, in described double-frequency synchronous pulsed plasma etching system, whole system is opened in the process of (pulseon) and pulse closedown (pulseoff) in pulse, the state of the plasma in reaction chamber can change, and cause the input impedance of the output impedance of source current and impedance matching box not mated, cause the power supplying efficiency of power supply to reduce.
The output impedance of source current and the input impedance of impedance matching box can be realized by the matching capacitance in the frequency of adjustment source current or impedance matching box.Frequency by adjusting source current in prior art realizes in the method for impedance matching, and the frequency modulation efficiency of algorithm of source current is low, cannot be automatically found suitable matching frequency.
Summary of the invention
The problem that the present invention solves is to provide a kind of impedance matching methods of plasma etching system, improves the efficiency of impedance matching.
For solving the problem, the invention provides a kind of impedance matching methods of plasma etching system, comprise: plasma etching system is provided, described plasma etching system comprises: impedance matching box, the input of described impedance matching box is electrically connected with source current and bias supply, the output of described impedance matching box is electrically connected with reaction chamber, the link of described impedance matching box and source current is electrically connected with one end of voltage-to-current detector, and the described voltage-to-current detector other end is connected with source current by frequency adjustment control unit; Under source current and bias supply are operated in continuous power pattern simultaneously, the frequency of adjustment source current makes described source current impedance mate with adaptation sending-end impedance, obtains the first matching frequency; Change described bias supply into pulsed power mode, described pulsed power mode comprises pulse opening and pulse closed condition, the power of described pulse opening is identical with the power under continuous power pattern, the power of described pulse closed condition is less than the power of described pulse opening, using the reference frequency of described first matching frequency as the source current under bias supply pulse opening; When described bias supply changes pulse closed condition into by pulse opening, with described reference frequency for benchmark, the frequency increased or reduce described source current makes described source current impedance mate with adaptation sending-end impedance, the second matching frequency of acquisition source current.
Optionally, the method of the frequency of adjustment source current comprises: described voltage-to-current detector obtains source current and is connected short input current and voltage with impedance matching box, obtained impedance and the reflection coefficient of power of impedance matching box input by described electric current and voltage data, described reflection coefficient of power is the ratio of reflection power and source current power output; The sending-end impedance of described impedance matching box and reflection coefficient of power are fed back to frequency adjustment controller; Described frequency adjustment controller adjusts the frequency of source current according to the input impedance value obtained and reflection coefficient of power.
Optionally, described frequency adjustment control unit controls the direction of source current frequency adjustment by the sine value at the phase angle of the sending-end impedance of impedance matching box: if the sine value at described phase angle is greater than 0, then reduce the frequency of source current; If the sine value at described phase angle is less than 0, then increase the frequency of source current, when the sine value at described phase angle is 0, stop frequency modulation, now frequency second matching frequency of source current.
Optionally, in the process of adjustment source current frequency, the numerical value of the frequency that described source current single reduces or increases is a frequency step, the numerical value of stepping of adjusting frequency according to the size of reflection coefficient of power.
Optionally, described reflection coefficient of power is larger, then the numerical value of frequency step is larger.
Optionally, described reflection coefficient of power is greater than 0.25, and the numerical value of described frequency step is 100KHz.
Optionally, the numerical value of described frequency step reduces along with the reduction of reflection coefficient of power.
Optionally, the numerical value of described frequency step reduces along with the reduction equal proportion of reflection coefficient of power.
Optionally, after described bias supply changes pulsed power mode into, the reflection coefficient of power that voltage-to-current detector obtains change and trigger described frequency adjustment control unit the frequency of source current is adjusted.
Optionally, triggering the reflection coefficient of power magnitude range that described source current carries out frequency adjustment is 0.1 ~ 0.9.
Optionally, when source current impedance is mated with adaptation sending-end impedance, the reflection coefficient of power of described impedance matching box input is 0.
Optionally, described source current and bias supply co-operation are under pulsed power mode.
Optionally, the scope of the power output of described source current under pulsed power mode is 200W ~ 1000W.
Optionally, the frequency of described bias supply is set automatically by bias supply.
Optionally, be provided with impedance matching capacitances in described impedance matching box, described impedance matching capacitances is that preset value does not change.
Compared with prior art, technical scheme of the present invention has the following advantages:
In sum, in embodiments of the invention, when described bias supply changes pulse closed condition into from pulse opening, when causing the impedance of plasma etching system to change, by adjusting the frequency of source current, find the matching frequency under described pulse " shut " mode".The adjustment of described source current frequency is using the first matching frequency under continuous power mode of operation as reference frequency, according to the direction of the positive and negative determination frequency adjustment of the sine value at the phase angle of the impedance of impedance matching adjuster input, if the sine value at described phase angle is the frequency that canonical reduces described source current, if the sine value at described phase angle is negative, then improve the frequency of described source current.Determine by the positive and negative of described impedance phase angle the direction that frequency adjusts, the swept frequency range of described source current frequency adjustment can be reduced, improve the efficiency of frequency adjustment.
And, the size of the frequency single adjustment of described source current is a frequency step, the size of described frequency step can be determined according to the reflection coefficient of power of described impedance matching box input, described frequency step can reduce gradually according to being reduced to of described reflection coefficient of power, 0 is gradually become with the sine value at the phase angle making described impedance, and described reflection coefficient can be moved closer in 0, avoid because frequency shift is excessive and cause the accuracy of frequency sweep lower, and miss described second matching frequency, the efficiency of the impedance matching of the described plasma etching system of further raising, the impedance matching of described plasma etching system can be realized rapidly when bias supply switches under pulse unlatching and pulse " shut " mode", improve the palace efficiency of power supply.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the plasma etching system of embodiments of the invention;
Fig. 2 is the schematic diagram of impedance matching point on Smith chart of the plasma based etching system of embodiments of the invention.
Embodiment
According to background technology, the efficiency that prior art plasma etching system carries out impedance matching is lower.
Because source current is for generation of the plasma in reaction chamber, so, the frequency of described source current is larger for the impedance influences of plasma, and the frequency change of bias supply is little for the impedance influences of plasma, so suitable matching frequency can be found, to realize the coupling of impedance by the frequency adjusting source current.
Because bias supply is under (pulseon) is opened in pulse and (pulseoff) state is closed in pulse, the impedance of system has larger difference.The moment of pulse closed condition is switched to from pulse opening at bias supply, the impedance of the output of impedance matching box is caused to change, can cause raising the reflection coefficient of power, with the coarse adjustment of trigger source supply frequency, and then cause whole plasmoid unstable.Because the switching rate of the pulse closed condition of pulse opening is very fast, existing source current frequency adjustment speed does not catch up with the speed of pulse change, thus cannot find the matching frequency under pulse unlatching and pulse closed condition fast.
In technical scheme of the present invention, the direction adjusted by the impedance phase determination source current frequency of impedance matching box input, can reduce the swept frequency range of source current, improves the speed of frequency adjustment, thus comparatively fast obtains suitable matching frequency.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Please refer to Fig. 1, plasma impedance matching system is provided, described plasma impedance matching system comprises: impedance matching box 30, the input of described impedance matching box 30 is electrically connected with source current 10 and bias supply 20, the output of described impedance matching box 30 is electrically connected with reaction chamber 40, the link of described impedance matching box 30 and source current 10 is electrically connected with one end of voltage-to-current detector 50, and described voltage-to-current detector 50 other end is connected with source current 10 by frequency adjustment control unit 60.
Described source current 10 is for providing high-frequency power supply to reaction chamber, and for producing plasma in reaction chamber 40, described source current 10 controls the density of the plasma produced; Described bias supply 20 provides low frequency power power supply for giving reaction chamber 40, controls the energy that isoionic direction in described reaction chamber 40 and described plasma carry.
The input of described impedance matching box 30 connects described source current 10 and bias supply 20, output coupled reaction chamber 40, the power power-supply that described source current 10 and bias supply 20 produce can be transferred to described reaction chamber by described impedance matching box 30, reduces the power loss of described source current 10 and bias supply 20 output.
Described impedance matching box 30 comprises a matching capacitance, in the prior art, by the described matching capacitance of adjustment, can reach the impedance matching of plasma etching system.In the embodiment that we are bright, electric capacity in described impedance matching box 30 adopts the capacitance preset, and in subsequent process, do not change the capacitance of the matching capacitance in described impedance matching box 30, but realize the impedance matching of system by the frequency adjusting source current 10.
Described reaction chamber 40 is as the etch chamber of carrying out plasma etching, and have upper and lower two pole plates in described reaction chamber, substrate to be etched is positioned on bottom crown.The voltage of described source current 10 and bias supply 20 can be added on upper bottom crown by described impedance matching box 30 simultaneously respectively, or is added on same pole plate.
Described voltage-to-current detector 50 is connected with the input of impedance matching box 30, voltage and current signal on the transmission line that the input detecting described impedance matching box 30 is connected with source current 10, by described voltage and current signal, the power P that the source current 10 that can obtain described impedance matching box 30 input inputs
i, described voltage-to-current detector 50 passes through its built-in computing unit, by the power P of input
iwith the power output P of source current 10
ocompare, obtain the reflection power P of the input of described impedance matching box 30
f, P
f=P
o-P
i, thus obtain the reflection coefficient of power R=P of described impedance matching box input
f/ P
o=(P
o-P
i)/P
o; Described voltage-to-current detector 50 passes through its built-in computing unit, by the impedance Z of the input of described voltage and current signal acquisition impedance matching box, and Z=voltage/current.
Described frequency adjustment controller 60 is connected with source current 10, for the frequency hop coefficients R fed back according to described voltage-to-current detector and impedance Z, adjusts the frequency of described source current 10.
First under making described source current 10 and bias supply 20 be operated in continuous power pattern, and in impedance matching box 30 when preset matching electric capacity, the frequency of adjustment source current, makes the impedance of described source current and the impedance matching of impedance matching box input, obtains the first matching frequency f
0.The frequency of described bias supply 20 is set automatically by described bias supply 20.Under described continuous power pattern, the power output of described source current 10 and bias supply 20 is 1000W.
Because described source current 10 determines the plasma density in described reaction chamber 40, so the impedance of described reaction chamber 40 is very responsive for the frequency shift of source current 10, described plasma etching system can be made faster to reach impedance matching by the frequency adjusting described source current 10; And described bias supply 20 affects energy and the direction of plasma, the frequency of described bigoted power supply 20 can make the impedance of described plasma etching system keep coupling in a larger scope, so, in the present embodiment, by a described bias supply 20 setting frequency automatically, then the frequency by adjusting described source current 10 makes the impedance of whole plasma etching system reach coupling, obtains the first matching frequency f
0.Further, being follow-uply switched to pulse mode when described bias supply 20, after causing system impedance to change, is also the coupling being realized impedance by the frequency adjustment of source current 10.
Then, be pulsed power mode by the working mode transition of described bias supply 20, the one-period of described pulsed power mode comprises pulse opening and pulse closed condition, the power of described pulse opening is identical with the power under continuous power pattern, and the power of described pulse closed condition is less than the power of described pulse opening.
In the present embodiment, under described source current 10 is still operated in continuous power pattern, and the power output of described source current 10 is still 1000W; Power output under the pulse opening of described bias supply 20 is identical with the power output under continuous power pattern, be still 1000W, so described bias supply 20 is when continuous power Mode change is to pulse opening, the impedance of system does not change, described source current 10 at the first matching frequency f
0under, the impedance still coupling of described plasma system.
But, when described bias supply 20 to change the moment of pulse closed condition into from pulse opening, because the power output of described bias supply 20 changes, the state of plasma is caused to change, thus cause the impedance of reaction chamber 40 to change, thus the impedance of whole plasma etching system is no longer mated.Impedance mismatch can cause the reflection coefficient of power of the input of described impedance matching box 30 to increase, and the power that described impedance matching box 30 input is received has part and reflects back, and causes the power supplying efficiency of power supply to decline.
Please refer to Fig. 2, on Smith (Smith) circle diagram, the position view of system impedance match point.
When described bias supply 20 is under pulse opening, the impedance matching point of described system, at A point, is positioned at the center of circle A point of Smith chart, and now, the reflection coefficient of power of the input of impedance matching box 30 is 0; When described bias supply 20 changes pulse closed condition into from pulse opening, cause impedance to change, make described match point depart from center of circle A point, change to B point or C point.Needing frequency by adjusting described source current 10, get back to center of circle A point under the state that described match point is closed in pulse, thus the reflection coefficient of power making the input of impedance matching box 30 being 0, improves the Power supply efficiency of described plasma etching system.
Changed power due to bias supply 20 can not affect the density of the plasma in described reaction chamber, and can the sheath layer thickness of the plasma generation in described reaction chamber 40 be had an impact, the sheath layer thickness of described plasma is changed, thus cause the electric capacity between in described reaction chamber two pole plates to change, and the impact of described capacitance variations is the imaginary part of reaction chamber impedance, and the real part of impedance is not affected substantially, described impedance comprises real part and imaginary part, concrete, impedance Z=Re (Z)+jIm(Z).
Angle between the real axis of the level at described AB line or AC line and A point place is the phase angle of impedance.
At described bias supply 20 from pulse open mode, change the moment of pulse " shut " mode" into, impedance changes, and causes the impedance of described plasma etching system no longer to be mated, and the input power of the input section of impedance matching box 30 reflects.Described voltage-to-current detector 50 detects described source current 10 and the voltage and current signal on the transmission line of the input of impedance matching box 30, and the reflection coefficient of power R of described impedance matching box 30 input can be obtained thus, and the input impedance Z of described impedance matching box; Above-mentioned reflection coefficient of power R and resistance value Z is fed back to frequency adjustment controller 60 by described voltage-to-current detector, when reflection coefficient of power R arrives the coarse adjustment coefficient of default, the frequency triggering described frequency adjustment controller 60 pairs of source currents 10 adjusts, described coarse adjustment coefficient can set according to the requirement of product, described coarse adjustment coefficient can be 0.1 ~ 0.9, coarse adjustment coefficient described in this enforcement power is 0.25, namely, when described reflection coefficient of power is greater than 0.25, trigger the frequency of described frequency adjustment controller 60 to described source current 10 and adjust.
The reflection coefficient that described frequency adjustment controller 60 feeds back with voltage-to-current detector 50 and resistance value for foundation, with described first matching frequency f
0for reference frequency, the frequency of adjustment source current 10, finds second matching frequency of bias supply 20 under pulse closed condition.
As can be seen from the former figure of Smith, when the described impedance mismatch at described plasma etching system, the phase angle of described impedance is greater than 0.When the sine value at described phase angle is greater than 0, described match point is positioned at the top of real axis; When the sine value at described phase angle is less than 0, described match point is positioned at the below of real axis.The phase angle of described impedance is θ, then sine value Sin (θ)=Im (Z)/[Im (Z) at described phase angle
2+ Re (Z)
2]
1/2, so described voltage-to-current detector 50 can obtain the positive and negative of the sine value at the phase angle of described impedance by detecting the resistance value obtained.The sine value of described impedance phase angle is just, i.e. the imaginary part of described impedance is just; The sine value at the phase angle of described impedance is negative, and the imaginary part being described impedance is negative.
Sine value when the phase angle of described impedance is positive number (imaginary part of impedance is just), then described frequency adjustment control unit 60 makes the frequency of described source current 10 at the first matching frequency f
0basis on reduce gradually; Sine value when the phase angle of described impedance is negative (imaginary part of impedance is negative), then described frequency adjustment control unit 60 makes the frequency of described source current 10 at the first matching frequency f
0basis on increase gradually.
Further, described frequency adjustment control unit adjusts in the process of the frequency of described source current 10, and the numerical value of the frequency that described source current single increases or reduces is a frequency step, and the size of described frequency step then adjusts according to the size of reflection coefficient of power.
Concrete, when described reflection coefficient of power is larger, can select larger frequency step, such as, when described reflection coefficient of power is greater than 0.25, the numerical value of described frequency step can be 100KHz; And along with the frequency of source current 10 adjusts, described reflection coefficient of power can reduce gradually, and the numerical value of described frequency step also can reduce along with the reduction of reflection coefficient of power.In one embodiment, along with the reduction of reflection coefficient of power, equal proportion reduces the numerical value of described frequency step, and such as described power emission coefficient reduces 1/2, then described frequency step also corresponding reduction 1/2.
After described frequency adjustment control unit once adjusts the frequency of source current 10, the reflection coefficient of power R of the impedance matching box input after the frequency adjustment of the detection adjustment source current 10 that described voltage-to-current detector 50 is synchronous and input impedance Z, and Real-time Feedback adjusts controller to frequency, described frequency adjustment controller is according to the size of the reflection coefficient of power obtained, and the sine value at the phase angle of impedance adjusts the numerical value of the frequency step of source current 10 frequency shift in real time, along with described reflection coefficient of power is more and more less, the frequency of described source current 10 is also more close to second matching frequency of bias supply 20 under pulse " shut " mode".Final when the sine value at the phase angle of described impedance is 0, stop adjusting the frequency of described source current 10, now the reflection coefficient of power of the input of described impedance matching box 30 equals 0, realizes the impedance matching to described plasma etching system.
In other embodiments of the invention, under described source current 10 also can be operated in pulsed power mode together with bias supply 20, now the output power range of described source current 10 is 200W ~ 1000W.Source current 10 can also can be asynchronous with the impulsive synchronization of bias supply 20.Because the frequency shift of described source current 10 can produce change to the density of the plasma in reaction chamber 40, so also can have an impact to the real part of the impedance of described reaction chamber 40.The frequency of method in follow-up employing the present embodiment to described source current 10 adjusts, also suitable frequency can be found to make the sine value at the phase angle of described impedance equal 0, but because the real part of impedance also changes, now the reflection coefficient of power of impedance matching box 30 input still can be greater than 0.When power output under the pulse opening of described source current 10 and pulse close your state is more or less the same, when making the sine value at the phase angle of impedance equal 0 after overfrequency adjustment, described reflection coefficient can be less than the coarse adjustment coefficient of default, still can meet the demand of actual production; And when if the difference of described source current between the input power under the power output and pulse closed condition of pulse opening is larger, by the reflection coefficient of power of described impedance matching box 30 input also being made all the time to be less than the coarse adjustment coefficient of default to the adjustment of the frequency of source current 10.In one embodiment, the power output of the pulse opening of described source current 10 is 1000W, and the power output of the pulse closed condition of described source current 10 is greater than 200W.
In sum, in embodiments of the invention, when described bias supply 20 changes pulse closed condition into from pulse opening, when causing the impedance of plasma etching system to change, by adjusting the frequency of source current 10, find the matching frequency of described bias supply 20 under pulse " shut " mode".Described frequency adjustment controller 60 is using the first matching frequency of the source current 10 under continuous power mode of operation as reference frequency, according to the direction of the positive and negative determination frequency adjustment of the sine value at the phase angle of the impedance of impedance matching adjuster 30 input, if the sine value at described phase angle is just, then reduce the frequency of described source current 10, if the sine value at described phase angle is negative, then improve the frequency of described source current 10.Determine by the positive and negative of described impedance phase angle the direction that frequency adjusts, the swept frequency range of the frequency adjustment of described source current 10 can be reduced, improve the efficiency of frequency adjustment.
And, the size of the frequency single adjustment of described source current 10 is a frequency step, the size of described frequency step can be determined according to the reflection coefficient of power of described impedance matching box 30 input, described frequency step can reduce gradually according to being reduced to of described reflection coefficient of power, 0 is gradually become with the sine value at the phase angle making described impedance, and described reflection coefficient can be moved closer in 0, avoid because frequency shift is excessive and cause the accuracy of frequency sweep lower, and miss described second matching frequency, the efficiency of the impedance matching of the described plasma etching system of further raising, the impedance matching of described plasma etching system can be realized rapidly when bias supply 20 switches under pulse unlatching and pulse " shut " mode", improve the power supplying efficiency of power supply.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (15)
1. an impedance matching methods for plasma etching system, is characterized in that, comprising:
Plasma etching system is provided, described plasma etching system comprises: impedance matching box, the input of described impedance matching box is electrically connected with source current and bias supply, the output of described impedance matching box is electrically connected with reaction chamber, the link of described impedance matching box and source current is electrically connected with one end of voltage-to-current detector, and the described voltage-to-current detector other end is connected with source current by frequency adjustment control unit;
Under source current and bias supply are operated in continuous power pattern simultaneously, the frequency of adjustment source current makes described source current impedance mate with adaptation sending-end impedance, obtains the first matching frequency;
Change described bias supply into pulsed power mode, described pulsed power mode comprises pulse opening and pulse closed condition, the power of described pulse opening is identical with the power under continuous power pattern, the power of described pulse closed condition is less than the power of described pulse opening, using the reference frequency of described first matching frequency as the source current under bias supply pulse opening;
When described bias supply changes pulse closed condition into by pulse opening, with described reference frequency for benchmark, the frequency increased or reduce described source current makes described source current impedance mate with adaptation sending-end impedance, the second matching frequency of acquisition source current.
2. the impedance matching methods of plasma etching system according to claim 1, it is characterized in that, the method of the frequency of adjustment source current comprises: described voltage-to-current detector obtains input current and the voltage of source current and impedance matching box link, obtained impedance and the reflection coefficient of power of impedance matching box input by described electric current and voltage data, described reflection coefficient of power is the ratio of reflection power and source current power output; The sending-end impedance of described impedance matching box and reflection coefficient of power are fed back to frequency adjustment controller; Described frequency adjustment controller adjusts the frequency of source current according to the input impedance value obtained and reflection coefficient of power.
3. the impedance matching methods of plasma etching system according to claim 2, it is characterized in that, described frequency adjustment control unit controls the direction of source current frequency adjustment by the sine value at the phase angle of the sending-end impedance of impedance matching box: if the sine value at described phase angle is greater than 0, then reduce the frequency of source current; If the sine value at described phase angle is less than 0, then increase the frequency of source current, when the sine value at described phase angle is 0, stop frequency modulation, now frequency second matching frequency of source current.
4. the impedance matching methods of plasma etching system according to claim 3, it is characterized in that, in the process of adjustment source current frequency, the numerical value of the frequency that described source current single reduces or increases is a frequency step, the numerical value of stepping of adjusting frequency according to the size of reflection coefficient of power.
5. the impedance matching methods of plasma etching system according to claim 4, is characterized in that, described reflection coefficient of power is larger, then the numerical value of frequency step is larger.
6. the impedance matching methods of plasma etching system according to claim 5, is characterized in that, described reflection coefficient of power is greater than 0.25, and the numerical value of described frequency step is 100KHz.
7. the impedance matching methods of plasma etching system according to claim 4, is characterized in that, the numerical value of described frequency step reduces along with the reduction of reflection coefficient of power.
8. the impedance matching methods of plasma etching system according to claim 7, is characterized in that, the numerical value of described frequency step reduces along with the reduction equal proportion of reflection coefficient of power.
9. the impedance matching methods of plasma etching system according to claim 1, it is characterized in that, after described bias supply changes pulsed power mode into, the reflection coefficient of power that voltage-to-current detector obtains change and trigger described frequency adjustment control unit the frequency of source current is adjusted.
10. the impedance matching methods of plasma etching system according to claim 9, is characterized in that, triggering the reflection coefficient of power magnitude range that described source current carries out frequency adjustment is 0.1 ~ 0.9.
The impedance matching methods of 11. plasma etching systems according to claim 1, is characterized in that, when source current impedance is mated with adaptation sending-end impedance, the reflection coefficient of power of described impedance matching box input is 0.
The impedance matching methods of 12. plasma etching systems according to claim 1, is characterized in that, described source current and bias supply co-operation are under pulsed power mode.
The impedance matching methods of 13. plasma etching systems according to claim 1, is characterized in that, the scope of the power output of described source current under pulsed power mode is 200W ~ 1000W.
The impedance matching methods of 14. plasma etching systems according to claim 1, is characterized in that, the frequency of described bias supply is set automatically by bias supply.
The impedance matching methods of 15. plasma etching systems according to claim 1, is characterized in that, is provided with impedance matching capacitances in described impedance matching box, and described impedance matching capacitances is that preset value does not change.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310705224.8A CN103632927B (en) | 2013-12-19 | 2013-12-19 | The impedance matching methods of plasma etching system |
| TW103141960A TWI533765B (en) | 2013-12-19 | 2014-12-03 | Impedance Matching Method of Plasma Etching System |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310705224.8A CN103632927B (en) | 2013-12-19 | 2013-12-19 | The impedance matching methods of plasma etching system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103632927A CN103632927A (en) | 2014-03-12 |
| CN103632927B true CN103632927B (en) | 2016-03-16 |
Family
ID=50213836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310705224.8A Active CN103632927B (en) | 2013-12-19 | 2013-12-19 | The impedance matching methods of plasma etching system |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103632927B (en) |
| TW (1) | TWI533765B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206494B (en) * | 2014-06-18 | 2017-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | The impedance matching methods of pulse radiation frequency power supply and the matching process of plasma apparatus |
| CN106876239B (en) * | 2015-12-14 | 2018-10-16 | 中微半导体设备(上海)有限公司 | The impedance matching methods and device of pulsed radiofrequency plasma |
| KR102460246B1 (en) * | 2016-03-04 | 2022-10-27 | 램 리써치 코포레이션 | Systems and methods for tuning an impedance matching network in a step-wise fashion |
| JP6157036B1 (en) | 2016-07-08 | 2017-07-05 | 株式会社京三製作所 | High frequency power supply device and control method of high frequency power supply device |
| JP6770868B2 (en) * | 2016-10-26 | 2020-10-21 | 東京エレクトロン株式会社 | Method for impedance matching of plasma processing equipment |
| CN108231516B (en) * | 2016-12-13 | 2019-10-11 | 北京北方华创微电子装备有限公司 | A kind of impedance matching methods, impedance matching system and semiconductor processing device |
| JP7041269B2 (en) * | 2017-12-13 | 2022-03-23 | アプライド マテリアルズ インコーポレイテッド | Spatial atomic layer deposition chamber with pulsed plasma to prevent charge damage |
| JP6497724B1 (en) * | 2018-09-21 | 2019-04-10 | 株式会社アドテック プラズマ テクノロジー | Impedance matching device provided in high frequency power supply system |
| CN111293022B (en) * | 2018-12-07 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | Impedance matching method and device for pulsed radio frequency plasma |
| KR102348338B1 (en) * | 2019-02-07 | 2022-01-06 | 엠케이에스코리아 유한회사 | The Driving Frequency Control Method of The Pulsed Frequency Variable RF Generator |
| CN112017931B (en) * | 2019-05-30 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Method applied to plasma system and related plasma system |
| CN117998716A (en) * | 2022-11-01 | 2024-05-07 | 中微半导体设备(上海)股份有限公司 | Capacitively coupled plasma processor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1079425A1 (en) * | 1999-08-26 | 2001-02-28 | Alcatel | Process and device for vacuum plasma treatment of substrate |
| CN101201595A (en) * | 2006-12-11 | 2008-06-18 | 应用材料股份有限公司 | Plasma reactor control by translating desired values of m plasma parameters to values of n chamber parameters |
| CN101964295A (en) * | 2009-07-24 | 2011-02-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching method and plasma processing equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3723060B2 (en) * | 2000-08-11 | 2005-12-07 | アルプス電気株式会社 | Plasma processing apparatus and performance confirmation system for plasma processing apparatus |
-
2013
- 2013-12-19 CN CN201310705224.8A patent/CN103632927B/en active Active
-
2014
- 2014-12-03 TW TW103141960A patent/TWI533765B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1079425A1 (en) * | 1999-08-26 | 2001-02-28 | Alcatel | Process and device for vacuum plasma treatment of substrate |
| CN101201595A (en) * | 2006-12-11 | 2008-06-18 | 应用材料股份有限公司 | Plasma reactor control by translating desired values of m plasma parameters to values of n chamber parameters |
| CN101964295A (en) * | 2009-07-24 | 2011-02-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching method and plasma processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201531168A (en) | 2015-08-01 |
| CN103632927A (en) | 2014-03-12 |
| TWI533765B (en) | 2016-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103632927B (en) | The impedance matching methods of plasma etching system | |
| CN105826154B (en) | For the impedance matching methods and device of pulse radiation frequency power supply | |
| TWI586225B (en) | Hybrid impedance matching for inductively coupled plasma system | |
| KR20240065225A (en) | Frequency and match tuning in one state and frequency tuning in the other state | |
| CN103035470B (en) | Semiconductor etching apparatus and semiconductor etching method | |
| WO2010129398A2 (en) | Multi-feed rf distribution systems and methods | |
| KR102421846B1 (en) | Sub-pulsing during a state | |
| CN105206494B (en) | The impedance matching methods of pulse radiation frequency power supply and the matching process of plasma apparatus | |
| CN103025041A (en) | Radio frequency impedance matcher | |
| CN103619117B (en) | Radio frequency power supply system capable of realizing rapid impedance matching | |
| CN105914123B (en) | Method and apparatus for controlling plasma in a plasma processing system | |
| CN105097396A (en) | Impedance matching device and semiconductor processing equipment | |
| CN102912306A (en) | Device and process for computerized automatic control high power pulsed magnetron spluttering | |
| CN103943448B (en) | The plasma processing method of a kind of plasma treatment appts | |
| CN103021783A (en) | Etching method of semiconductor structure | |
| US20240282553A1 (en) | Base bias adjustment apparatus and method, and semiconductor process device | |
| CN105227154A (en) | A kind of impedance-matching device | |
| CN103021774B (en) | Quick precision radio frequency automatic matching device | |
| TW202425045A (en) | Learning based tuning in a radio frequency plasma processing chamber | |
| WO2022103765A1 (en) | Systems and methods for radiofrequency signal generator-based control of impedance matching system | |
| CN109287020A (en) | It is a kind of for promoting the microwave source system and method for microwave output stability | |
| Coumou | Coherent feedforward impedance correction and feedback power regulation in a plasma processing RF power delivery system | |
| CN206479802U (en) | The Gain Automatic adjusting means of tungsten chemical deposition inner chamber plasma cleans terminal point control device | |
| CN203071795U (en) | Radio frequency power supply with digitally adjustable radio frequency signal phase | |
| US20240371605A1 (en) | Fast tuning radio frequency (rf) matching network |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CP01 | Change in the name or title of a patent holder |