CN103595385A - Radio frequency switch circuit of III-V group MOSFET device - Google Patents
Radio frequency switch circuit of III-V group MOSFET device Download PDFInfo
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Abstract
The invention discloses a radio frequency switch circuit of a III-V group MOSFET device, which comprises a self-bias switch circuit composed of GaAs MOSFETs, wherein the self-bias switch circuit is a radio frequency signal path and is provided with two direct current voltage bias ends, and each direct current voltage bias end is connected with an electrostatic protection circuit for preventing a switch from being damaged due to large voltage caused by static electricity; meanwhile, each direct-current voltage bias end is also connected with a self-boosting circuit for boosting the direct-current supply voltage. The circuit adopts GaAs MOSFET devices to manufacture a switch circuit, improves the radio frequency switching speed, simultaneously improves the dynamic range of a grid, realizes low insertion loss and improves the integration of the traditional radio frequency switch.
Description
Technical field
The present invention relates to technical field of radio frequency integrated circuits, especially a kind of radio-frequency switch circuit of the III-V MOSFET of family device.
Background technology
In actual radio-frequency (RF) switch application, electrostatic problem is one of very important factor always.Because static can bring a very brief large voltage, extremely easily cause that switch lost efficacy under strong voltage.Therefore electrostatic discharge protective circuit is all the key factor that needs radio-frequency (RF) switch designer to consider all the time.
On the other hand, in civilian radio communication, because the voltage that direct voltage source provides is limited, often be difficult to reach the best direct current biasing point of switching system work, therefore need to boost to DC bias circuit, common booster circuit generally adopts CMOS technique, has compatibling problem with traditional GaAs technique, circuit is generally placed on periphery by booster circuit simultaneously, fails to make full use of chip space area.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to propose a kind of radio-frequency switch circuit of the III-V MOSFET of family device, to have than the lower DC power of GaAs HEMT radio-frequency (RF) switch, has from boost function and electrostatic protection function simultaneously.
(2) technical scheme
For achieving the above object, the invention provides a kind of radio-frequency switch circuit of the III-V MOSFET of family device, this radio-frequency switch circuit comprises a self-bias switches circuit consisting of GaAs MOSFET, this self-bias switches circuit is radiofrequency signal path, there are two direct voltage offset sides, each direct voltage offset side is all connected with an electrostatic discharge protective circuit, in order to prevent that switch is because the large voltage that static brings damages; Meanwhile, each direct voltage offset side is also connected with one from booster circuit, in order to direct current supply voltage is boosted.
In such scheme, this self-bias switches circuit comprises that emission port TX is to the radiating circuit of antenna ANT, and antenna ANT is to the receiving circuit of receiving port RX.
In radiating circuit, the first bias DC voltage source Vctrl_1 is connected in the grid of the first metal-oxide-semiconductor T1, controls unlatching and the shutoff of the first metal-oxide-semiconductor T1 by controlling the grid voltage size of the first metal-oxide-semiconductor T1, thereby controls unlatching and the shutoff of radiating circuit; The 3rd resistance R 3 is connected with the grid of the first metal-oxide-semiconductor T1, plays the effect of isolation radiofrequency signal; The 3rd metal-oxide-semiconductor T3 is connected with the second bias DC voltage source Vctrl_2, and its on off state is contrary with the first metal-oxide-semiconductor T1, is used for improving the isolation performance of radiating circuit; The 5th resistance R 5 connects grid and the second bias DC voltage source Vctrl_2 of the 3rd metal-oxide-semiconductor T3, plays the effect of isolation radiofrequency signal.
In receiving circuit, the second bias DC voltage source Vctrl_2 connects the grid of the second metal-oxide-semiconductor T2, controls unlatching and the shutoff of the second metal-oxide-semiconductor T2 by controlling the grid voltage size of the second metal-oxide-semiconductor T2, thereby controls unlatching and the shutoff of receiving circuit; The 4th resistance R 4 is connected with the grid of the second metal-oxide-semiconductor T2, plays the effect of isolation radiofrequency signal; The 4th metal-oxide-semiconductor T4 is connected with the first bias DC voltage source Vctrl_1, and its on off state is contrary with the second metal-oxide-semiconductor T2, is used for improving the isolation performance of receiving circuit; The 6th resistance R 6 connects grid and the second bias DC voltage source Vctrl_2 of the 3rd metal-oxide-semiconductor T3, plays the effect of isolation radiofrequency signal.
In such scheme, described electrostatic discharge protective circuit comprises two identical circuit parts, one of them circuit part comprises drain-source the 11 metal-oxide-semiconductor T11 and the 12 metal-oxide-semiconductor T12 of series connection mutually, the 11 grid of metal-oxide-semiconductor T11 and the grid of the 12 metal-oxide-semiconductor T12 are all connected with the source electrode of the 12 metal-oxide-semiconductor T12 with the drain electrode of the 11 metal-oxide-semiconductor T11, and the drain electrode of the 12 metal-oxide-semiconductor is connected with the first bias DC voltage source Vctrl_1; Wherein another circuit part comprises drain-source the 13 metal-oxide-semiconductor T13 and the 14 metal-oxide-semiconductor T14 of series connection mutually, the 13 grid of metal-oxide-semiconductor T13 and the grid of the 14 metal-oxide-semiconductor T14 are all connected with the source electrode of the 14 metal-oxide-semiconductor T14 with the drain electrode of the 13 metal-oxide-semiconductor T13, and the drain electrode of the 14 metal-oxide-semiconductor T14 is connected with the second bias DC voltage source Vctrl_2.
In such scheme, describedly from booster circuit, comprise the first booster circuit part and the second booster circuit part, the first booster circuit part and the second booster circuit are partly symmetrical.
Described the first booster circuit partly comprises the transistor T 7 that drain electrode is connected with direct-current control voltage source Vctrl_1, the transistor T 6 that drain electrode is connected with transistor T 7 source electrodes, the resistance R 7 that connects transistor T 6 grids and ground, the inductance L 1 that connects transistor T 6 grids and transistor T 5 source electrodes, the inductance L 2 that connects DC control supply Vctrl_1 and transistor T 5 drain electrodes, the diode D1 that connects inductance L 2 and resistance R 3, the capacitor C 1 of earth;
Wherein, the first capacitor C 1 is connected with the first diode D1 with the grid of the first metal-oxide-semiconductor T1, plays the effect that store electrical energy provides extra voltage; The second inductance L 2 connects the first bias DC voltage source Vctrl_1, provides electric energy to store in the first capacitor C 1 through the first diode D1; The grid of the 7th metal-oxide-semiconductor T7 is connected the first bias DC voltage source Vctrl_1 with drain electrode, in normally on, plays the effect of dividing potential drop under the condition of the 6th metal-oxide-semiconductor T6 also conducting, and in the 6th metal-oxide-semiconductor T6 when shutoff only as DC channel; The grid of the 6th metal-oxide-semiconductor T6 connects the first inductance L 1, and gate voltage is controlled by the state that opens and shuts off of the 5th metal-oxide-semiconductor T5; When the 5th metal-oxide-semiconductor T5 opens, the 6th metal-oxide-semiconductor T6 also opens, make the first bias DC voltage source Vctrl_1 through the 6th metal-oxide-semiconductor T6 and the 7th metal-oxide-semiconductor T7 ground connection, and then the gate voltage that makes the 5th metal-oxide-semiconductor T5 drops near half of the first bias DC voltage source Vctrl_1, make the 5th metal-oxide-semiconductor T5 turn-off, make again the 6th metal-oxide-semiconductor T6 turn-off, the initial condition of getting back to circuit; Wherein the first inductance L 1 plays delayed action.
Described the second booster circuit partly comprises the transistor T 9 that drain electrode is connected with direct-current control voltage source Vctrl_2, the transistor T 10 that drain electrode is connected with transistor T 9 source electrodes, the resistance R 8 that connects transistor T 10 grids and ground, the inductance L 3 that connects transistor T 10 grids and transistor T 8 source electrodes, the inductance L 4 that connects DC control supply Vctrl_2 and transistor T 8 drain electrodes, the diode D2 that connects inductance L 4 and resistance R 4, the capacitor C 2 of earth;
Wherein, the second capacitor C 2 is connected with the second diode D2 with the grid of the second metal-oxide-semiconductor T2, plays the effect that store electrical energy provides extra voltage; The 4th inductance L 4 connects the second bias DC voltage source Vctrl_2, provides electric energy to store in the second capacitor C 2 through the second diode D2; The grid of the 9th metal-oxide-semiconductor T9 is connected the second bias DC voltage source Vctrl_2 with drain electrode, in normally on, plays the effect of dividing potential drop under the condition of the tenth metal-oxide-semiconductor T10 also conducting, and in the 10th metal-oxide-semiconductor T10 when shutoff only as DC channel; The grid of the tenth metal-oxide-semiconductor T10 connects the 3rd inductance L 3, and gate voltage is controlled by the state that opens and shuts off of the 8th metal-oxide-semiconductor T8; When the 8th metal-oxide-semiconductor T8 opens, the tenth metal-oxide-semiconductor T10 also opens, make the second bias DC voltage source Vctrl_2 through the tenth metal-oxide-semiconductor T10 and the 9th metal-oxide-semiconductor T9 ground connection, and then the gate voltage that makes the 8th metal-oxide-semiconductor T8 drops near half of the second bias DC voltage source Vctrl_2, make the 8th metal-oxide-semiconductor T8 turn-off, make again the tenth metal-oxide-semiconductor T10 turn-off, the initial condition of getting back to circuit; Wherein the 3rd inductance L 3 plays delayed action.
(3) beneficial effect
From technique scheme, can find out, the present invention has following beneficial effect:
1, the radio-frequency switch circuit of the III-V MOSFET of family device provided by the invention, adopts GaAs MOSFET to design automatic biasing radio-frequency switch circuit, has the DC power lower than GaAs HEMT; By design electrostatic discharge protective circuit with from booster circuit, strengthened the practicality of GaAs radio-frequency (RF) switch, reduced the application requirements of circuit.
2, the radio-frequency switch circuit of the III-V MOSFET of family device provided by the invention, adopt GaAs MOSFET element manufacturing automatic biasing radio-frequency switch circuit, when improving radio-frequency (RF) switch speed, improved the dynamic range of grid, realize low insertion loss, improved the integration of conventional radio frequency switch.
Accompanying drawing explanation
Fig. 1 is the structural representation of the radio-frequency switch circuit of the III-V MOSFET of family device provided by the invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the structural representation of the radio-frequency switch circuit of the III-V MOSFET of family device provided by the invention, this radio-frequency switch circuit comprises a self-bias switches circuit consisting of GaAs MOSFET, this self-bias switches circuit is radiofrequency signal path, there are two direct voltage offset sides, each direct voltage offset side is all connected with an electrostatic discharge protective circuit, in order to prevent that switch is because the large voltage that static brings damages; Meanwhile, each direct voltage offset side is also connected with one from booster circuit, in order to direct current supply voltage is boosted.
Self-bias switches circuit comprises that emission port TX is to the radiating circuit of antenna ANT, and antenna ANT is to the receiving circuit of receiving port RX.In radiating circuit, the first bias DC voltage source Vctrl_1 is connected in the grid of the first metal-oxide-semiconductor T1, controls unlatching and the shutoff of the first metal-oxide-semiconductor T1 by controlling the grid voltage size of the first metal-oxide-semiconductor T1, thereby controls unlatching and the shutoff of radiating circuit.The 3rd resistance R 3 is connected with the grid of the first metal-oxide-semiconductor T1, plays the effect of isolation radiofrequency signal.The 3rd metal-oxide-semiconductor T3 is connected with the second bias DC voltage source Vctrl_2, and its on off state is contrary with the first metal-oxide-semiconductor T1, is used for improving the isolation performance of radiating circuit.The 5th resistance R 5 connects grid and the second bias DC voltage source Vctrl_2 of the 3rd metal-oxide-semiconductor T3, plays the effect of isolation radiofrequency signal.In receiving circuit, the second bias DC voltage source Vctrl_2 connects the grid of the second metal-oxide-semiconductor T2, controls unlatching and the shutoff of the second metal-oxide-semiconductor T2 by controlling the grid voltage size of the second metal-oxide-semiconductor T2, thereby controls unlatching and the shutoff of receiving circuit.The 4th resistance R 4 is connected with the grid of the second metal-oxide-semiconductor T2, plays the effect of isolation radiofrequency signal.The 4th metal-oxide-semiconductor T4 is connected with the first bias DC voltage source Vctrl_1, and its on off state is contrary with the second metal-oxide-semiconductor T2, is used for improving the isolation performance of receiving circuit.The 6th resistance R 6 connects grid and the second bias DC voltage source Vctrl_2 of the 3rd metal-oxide-semiconductor T3, plays the effect of isolation radiofrequency signal.Because above resistance R 1～R6 resistance is all greater than 20,000 ohm, therefore can't affect the isolation performance of switch.
Electrostatic discharge protective circuit comprises two identical circuit parts.One of them circuit part comprises drain-source the 11 metal-oxide-semiconductor T11 and the 12 metal-oxide-semiconductor T12 of series connection mutually, the 11 grid of metal-oxide-semiconductor T11 and the grid of the 12 metal-oxide-semiconductor T12 are all connected with the source electrode of the 12 metal-oxide-semiconductor T12 with the drain electrode of the 11 metal-oxide-semiconductor T11, and the drain electrode of the 12 metal-oxide-semiconductor is connected with the first bias DC voltage source Vctrl_1.Wherein another circuit part comprises drain-source the 13 metal-oxide-semiconductor T13 and the 14 metal-oxide-semiconductor T14 of series connection mutually, the 13 grid of metal-oxide-semiconductor T13 and the grid of the 14 metal-oxide-semiconductor T14 are all connected with the source electrode of the 14 metal-oxide-semiconductor T14 with the drain electrode of the 13 metal-oxide-semiconductor T13, and the drain electrode of the 14 metal-oxide-semiconductor T14 is connected with the second bias DC voltage source Vctrl_2.
From booster circuit, comprise two symmetrical booster circuit parts.The first booster circuit partly comprises the transistor T 7 that drain electrode is connected with direct-current control voltage source Vctrl_1, the transistor T 6 that drain electrode is connected with transistor T 7 source electrodes, the resistance R 7 that connects transistor T 6 grids and ground, the inductance L 1 that connects transistor T 6 grids and transistor T 5 source electrodes, the inductance L 2 that connects DC control supply Vctrl_1 and transistor T 5 drain electrodes, the diode D1 that connects inductance L 2 and resistance R 3, the capacitor C 1 of earth.The first capacitor C 1 is connected with the first diode D1 with the grid of the first metal-oxide-semiconductor T1, plays the effect that store electrical energy provides extra voltage.The second inductance L 2 connects the first bias DC voltage source Vctrl_1, provides electric energy to store in the first capacitor C 1 through the first diode D1.The grid of the 7th metal-oxide-semiconductor T7 is connected the first bias DC voltage source Vctrl_1 with drain electrode, in normally on, plays the effect of dividing potential drop under the condition of the 6th metal-oxide-semiconductor T6 also conducting, and in the 6th metal-oxide-semiconductor T6 when shutoff only as DC channel.The grid of the 6th metal-oxide-semiconductor T6 connects the first inductance L 1, and gate voltage is controlled by the state that opens and shuts off of the 5th metal-oxide-semiconductor T5.When the 5th metal-oxide-semiconductor T5 opens, the 6th metal-oxide-semiconductor T6 also opens, make the first bias DC voltage source Vctrl_1 through the 6th metal-oxide-semiconductor T6 and the 7th metal-oxide-semiconductor T7 ground connection, and then the gate voltage that makes the 5th metal-oxide-semiconductor T5 drops near half of the first bias DC voltage source Vctrl_1, make the 5th metal-oxide-semiconductor T5 turn-off, make again the 6th metal-oxide-semiconductor T6 turn-off, the initial condition of getting back to circuit.Wherein the first inductance L 1 plays delayed action.
The second booster circuit partly comprises the transistor T 9 that drain electrode is connected with direct-current control voltage source Vctrl_2, the transistor T 10 that drain electrode is connected with transistor T 9 source electrodes, the resistance R 8 that connects transistor T 10 grids and ground, the inductance L 3 that connects transistor T 10 grids and transistor T 8 source electrodes, the inductance L 4 that connects DC control supply Vctrl_2 and transistor T 8 drain electrodes, the diode D2 that connects inductance L 4 and resistance R 4, the capacitor C 2 of earth.The second capacitor C 2 is connected with the second diode D2 with the grid of the second metal-oxide-semiconductor T2, plays the effect that store electrical energy provides extra voltage.The 4th inductance L 4 connects the second bias DC voltage source Vctrl_2, provides electric energy to store in the second capacitor C 2 through the second diode D2.The grid of the 9th metal-oxide-semiconductor T9 is connected the second bias DC voltage source Vctrl_2 with drain electrode, in normally on, plays the effect of dividing potential drop under the condition of the tenth metal-oxide-semiconductor T10 also conducting, and in the 10th metal-oxide-semiconductor T10 when shutoff only as DC channel.The grid of the tenth metal-oxide-semiconductor T10 connects the 3rd inductance L 3, and gate voltage is controlled by the state that opens and shuts off of the 8th metal-oxide-semiconductor T8.When the 8th metal-oxide-semiconductor T8 opens, the tenth metal-oxide-semiconductor T10 also opens, make the second bias DC voltage source Vctrl_2 through the tenth metal-oxide-semiconductor T10 and the 9th metal-oxide-semiconductor T9 ground connection, and then the gate voltage that makes the 8th metal-oxide-semiconductor T8 drops near half of the second bias DC voltage source Vctrl_2, make the 8th metal-oxide-semiconductor T8 turn-off, make again the tenth metal-oxide-semiconductor T10 turn-off, the initial condition of getting back to circuit.Wherein the 3rd inductance L 3 plays delayed action.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (8)
- The radio-frequency switch circuit of the 1.Yi Zhong III-V MOSFET of family device, it is characterized in that, this radio-frequency switch circuit comprises a self-bias switches circuit consisting of GaAs MOSFET, this self-bias switches circuit is radiofrequency signal path, there are two direct voltage offset sides, each direct voltage offset side is all connected with an electrostatic discharge protective circuit, in order to prevent that switch is because the large voltage that static brings damages; Meanwhile, each direct voltage offset side is also connected with one from booster circuit, in order to direct current supply voltage is boosted.
- 2. the radio-frequency switch circuit of the III-V MOSFET of family device according to claim 1, it is characterized in that, this self-bias switches circuit comprises that emission port (TX) is to the radiating circuit of antenna (ANT), and antenna (ANT) is to the receiving circuit of receiving port (RX).
- 3. the radio-frequency switch circuit of the III-V MOSFET of family device according to claim 2, it is characterized in that, in radiating circuit, the first bias DC voltage source (Vctrl_1) is connected in the grid of the first metal-oxide-semiconductor (T1), by controlling the grid voltage size of the first metal-oxide-semiconductor (T1), control unlatching and the shutoff of the first metal-oxide-semiconductor (T1), thereby control unlatching and the shutoff of radiating circuit; The 3rd resistance (R3) is connected with the grid of the first metal-oxide-semiconductor (T1), plays the effect of isolation radiofrequency signal; The 3rd metal-oxide-semiconductor (T3) is connected with the second bias DC voltage source (Vctrl_2), and its on off state is contrary with the first metal-oxide-semiconductor (T1), is used for improving the isolation performance of radiating circuit; The 5th resistance (R5) connects grid and second bias DC voltage source (Vctrl_2) of the 3rd metal-oxide-semiconductor (T3), plays the effect of isolation radiofrequency signal.
- 4. the radio-frequency switch circuit of the III-V MOSFET of family device according to claim 2, it is characterized in that, in receiving circuit, the second bias DC voltage source (Vctrl_2) connects the grid of the second metal-oxide-semiconductor (T2), by controlling the grid voltage size of the second metal-oxide-semiconductor (T2), control unlatching and the shutoff of the second metal-oxide-semiconductor (T2), thereby control unlatching and the shutoff of receiving circuit; The 4th resistance (R4) is connected with the grid of the second metal-oxide-semiconductor (T2), plays the effect of isolation radiofrequency signal; The 4th metal-oxide-semiconductor (T4) is connected with the first bias DC voltage source (Vctrl_1), and its on off state is contrary with the second metal-oxide-semiconductor (T2), is used for improving the isolation performance of receiving circuit; The 6th resistance (R6) connects grid and second bias DC voltage source (Vctrl_2) of the 3rd metal-oxide-semiconductor (T3), plays the effect of isolation radiofrequency signal.
- 5. the radio-frequency switch circuit of the III-V MOSFET of family device according to claim 1, it is characterized in that, described electrostatic discharge protective circuit comprises two identical circuit parts, one of them circuit part comprises drain-source the 11 metal-oxide-semiconductor (T11) and the 12 metal-oxide-semiconductor (T12) of series connection mutually, the 11 grid of metal-oxide-semiconductor (T11) and the grid of the 12 metal-oxide-semiconductor (T12) are all connected with the source electrode of the 12 metal-oxide-semiconductor (T12) with the drain electrode of the 11 metal-oxide-semiconductor (T11), and the drain electrode of the 12 metal-oxide-semiconductor is connected with the first bias DC voltage source (Vctrl_1); Wherein another circuit part comprises drain-source the 13 metal-oxide-semiconductor (T13) and the 14 metal-oxide-semiconductor (T14) of series connection mutually, the 13 grid of metal-oxide-semiconductor (T13) and the grid of the 14 metal-oxide-semiconductor (T14) are all connected with the source electrode of the 14 metal-oxide-semiconductor (T14) with the drain electrode of the 13 metal-oxide-semiconductor (T13), and the drain electrode of the 14 metal-oxide-semiconductor (T14) is connected with the second bias DC voltage source (Vctrl_2).
- 6. the radio-frequency switch circuit of the III-V MOSFET of family device according to claim 1, it is characterized in that, describedly from booster circuit, comprise the first booster circuit part and the second booster circuit part, the first booster circuit part and the second booster circuit are partly symmetrical.
- 7. the radio-frequency switch circuit of the III-V MOSFET of family device according to claim 1, it is characterized in that, described the first booster circuit partly comprises the transistor (T7) that drain electrode is connected with direct-current control voltage source (Vctrl_1), the transistor (T6) that drain electrode is connected with transistor (T7) source electrode, the resistance (R7) that connects transistor (T6) grid and ground, the inductance (L1) that connects transistor (T6) grid and transistor (T5) source electrode, the inductance (L2) that connects DC control supply (Vctrl_1) and transistor (T5) drain electrode, the diode (D1) that connects inductance (L2) and resistance (R3), the electric capacity of earth (C1),Wherein, the first electric capacity (C1) is connected with the first diode (D1) with the grid of the first metal-oxide-semiconductor (T1), plays the effect that store electrical energy provides extra voltage; The second inductance (L2) connects the first bias DC voltage source (Vctrl_1), provides electric energy to store in the first electric capacity (C1) through the first diode (D1); The grid of the 7th metal-oxide-semiconductor (T7) is connected the first bias DC voltage source (Vctrl_1) with drain electrode, in normally on, under the condition of the 6th metal-oxide-semiconductor (T6) also conducting, play the effect of dividing potential drop, and when the 6th metal-oxide-semiconductor (T6) turn-offs only as DC channel; The grid of the 6th metal-oxide-semiconductor (T6) connects the first inductance (L1), and gate voltage is controlled by the state that opens and shuts off of the 5th metal-oxide-semiconductor (T5); When the 5th metal-oxide-semiconductor (T5) is opened, the 6th metal-oxide-semiconductor (T6) is also opened, make the first bias DC voltage source (Vctrl_1) through the 6th metal-oxide-semiconductor (T6) and the 7th metal-oxide-semiconductor (T7) ground connection, and then the gate voltage that makes the 5th metal-oxide-semiconductor (T5) drops near half of the first bias DC voltage source (Vctrl_1), make the 5th metal-oxide-semiconductor (T5) turn-off, make again the 6th metal-oxide-semiconductor (T6) turn-off, the initial condition of getting back to circuit; Wherein the first inductance (L1) plays delayed action.
- 8. the radio-frequency switch circuit of the III-V MOSFET of family device according to claim 1, it is characterized in that, described the second booster circuit partly comprises the transistor (T9) that drain electrode is connected with direct-current control voltage source (Vctrl_2), the transistor (T10) that drain electrode is connected with transistor (T9) source electrode, the resistance (R8) that connects transistor (T10) grid and ground, the inductance (L3) that connects transistor (T10) grid and transistor (T8) source electrode, the inductance (L4) that connects DC control supply (Vctrl_2) and transistor (T8) drain electrode, the diode (D2) that connects inductance (L4) and resistance (R4), the electric capacity of earth (C2),Wherein, the second electric capacity (C2) is connected with the second diode (D2) with the grid of the second metal-oxide-semiconductor (T2), plays the effect that store electrical energy provides extra voltage; The 4th inductance (L4) connects the second bias DC voltage source (Vctrl_2), provides electric energy to store in the second electric capacity (C2) through the second diode (D2); The grid of the 9th metal-oxide-semiconductor (T9) is connected the second bias DC voltage source (Vctrl_2) with drain electrode, in normally on, under the condition of the tenth metal-oxide-semiconductor (T10) also conducting, play the effect of dividing potential drop, and when the tenth metal-oxide-semiconductor (T10) turn-offs only as DC channel; The grid of the tenth metal-oxide-semiconductor (T10) connects the 3rd inductance (L3), and gate voltage is controlled by the state that opens and shuts off of the 8th metal-oxide-semiconductor (T8); When the 8th metal-oxide-semiconductor (T8) is opened, the tenth metal-oxide-semiconductor (T10) is also opened, make the second bias DC voltage source (Vctrl_2) through the tenth metal-oxide-semiconductor (T10) and the 9th metal-oxide-semiconductor (T9) ground connection, and then the gate voltage that makes the 8th metal-oxide-semiconductor (T8) drops near half of the second bias DC voltage source (Vctrl_2), make the 8th metal-oxide-semiconductor (T8) turn-off, make again the tenth metal-oxide-semiconductor (T10) turn-off, the initial condition of getting back to circuit; Wherein the 3rd inductance (L3) plays delayed action.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091827A (en) * | 2014-06-23 | 2014-10-08 | 桂林电子科技大学 | Metal-oxide-semiconductor type field effect transistor radio frequency switch device and manufacturing method thereof |
| CN104935317A (en) * | 2015-02-04 | 2015-09-23 | 广东工业大学 | CMOS SOI radio frequency switch structure capable of realizing low insertion loss and low harmonic |
| CN106253205A (en) * | 2016-09-07 | 2016-12-21 | 京信通信技术(广州)有限公司 | A kind of radio-frequency feed protection circuit |
| CN106888009A (en) * | 2017-02-14 | 2017-06-23 | 上海华虹宏力半导体制造有限公司 | Difference transceiving radio frequency is switched and rf terminal |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438706A (en) * | 2002-02-14 | 2003-08-27 | 株式会社日立制作所 | Electrostatic releasing protection circuit |
| US20080290928A1 (en) * | 2007-05-24 | 2008-11-27 | Kabushiki Kaisha Toshiba | Switching circuit |
| CN101741410A (en) * | 2008-11-10 | 2010-06-16 | 株式会社瑞萨科技 | Semiconductor integrated circuit and high frequency module with the same |
| US20110140764A1 (en) * | 2009-12-16 | 2011-06-16 | Electronics & Telecommunications Research | Cmos switch for use in radio frequency switching and isolation enhancement method |
| CN102237787A (en) * | 2010-04-20 | 2011-11-09 | 苏州数伦科技有限公司 | RF (radio frequency) energy charge pump |
| CN203039658U (en) * | 2012-12-20 | 2013-07-03 | 南京佳立实通信科技有限公司 | Low-pass high-isolation intelligent radio frequency switch |
-
2013
- 2013-11-25 CN CN201310607972.2A patent/CN103595385A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438706A (en) * | 2002-02-14 | 2003-08-27 | 株式会社日立制作所 | Electrostatic releasing protection circuit |
| US20080290928A1 (en) * | 2007-05-24 | 2008-11-27 | Kabushiki Kaisha Toshiba | Switching circuit |
| CN101741410A (en) * | 2008-11-10 | 2010-06-16 | 株式会社瑞萨科技 | Semiconductor integrated circuit and high frequency module with the same |
| US20110140764A1 (en) * | 2009-12-16 | 2011-06-16 | Electronics & Telecommunications Research | Cmos switch for use in radio frequency switching and isolation enhancement method |
| CN102237787A (en) * | 2010-04-20 | 2011-11-09 | 苏州数伦科技有限公司 | RF (radio frequency) energy charge pump |
| CN203039658U (en) * | 2012-12-20 | 2013-07-03 | 南京佳立实通信科技有限公司 | Low-pass high-isolation intelligent radio frequency switch |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091827A (en) * | 2014-06-23 | 2014-10-08 | 桂林电子科技大学 | Metal-oxide-semiconductor type field effect transistor radio frequency switch device and manufacturing method thereof |
| CN104091827B (en) * | 2014-06-23 | 2017-02-15 | 桂林电子科技大学 | Manufacturing method of metal-oxide-semiconductor type field effect transistor radio frequency switch device |
| CN104935317A (en) * | 2015-02-04 | 2015-09-23 | 广东工业大学 | CMOS SOI radio frequency switch structure capable of realizing low insertion loss and low harmonic |
| CN106253205A (en) * | 2016-09-07 | 2016-12-21 | 京信通信技术(广州)有限公司 | A kind of radio-frequency feed protection circuit |
| CN106253205B (en) * | 2016-09-07 | 2019-01-18 | 京信通信系统（中国）有限公司 | A kind of radio-frequency feed protection circuit |
| CN106888009A (en) * | 2017-02-14 | 2017-06-23 | 上海华虹宏力半导体制造有限公司 | Difference transceiving radio frequency is switched and rf terminal |
| CN106888009B (en) * | 2017-02-14 | 2021-03-23 | 上海华虹宏力半导体制造有限公司 | Differential transceiving radio frequency switch and radio frequency terminal |
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