CN103567642B - Sapphire cutter sweep - Google Patents
Sapphire cutter sweep Download PDFInfo
- Publication number
- CN103567642B CN103567642B CN201210280285.XA CN201210280285A CN103567642B CN 103567642 B CN103567642 B CN 103567642B CN 201210280285 A CN201210280285 A CN 201210280285A CN 103567642 B CN103567642 B CN 103567642B
- Authority
- CN
- China
- Prior art keywords
- ultra
- laser source
- sapphire
- cutter sweep
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The present invention provides a kind of sapphire cutter sweep, and it includes a ultra-violet laser source and collimating lens.The ultra-violet laser source is used to send a laser beam.The collimation lens is used to for the laser beam to pool a collimated laser beam.The collimated laser beam is used for cutting sapphire.The service band of the ultra-violet laser source is 200 400 nanometers.In this way, due to replacing relatively costly diamond using the lower-cost ultra-violet laser source and the collimation lens, it is possible to decrease cost.In addition, laser cutting is capable of achieving high-speed cutting, efficiency is improved.
Description
Technical field
The present invention relates to sapphire cutting technique, more particularly to a kind of sapphire cutter sweep.
Background technology
At present, mainly by diamond coatings line (diamond coated wire) cutting sapphire, however, on the one hand
Due to diamond in itself costly, on the other hand due to being contact cutting, diamond coatings line loss consumption to a certain extent after
Need to change, cause cutting cost high.In addition, less efficient by the diamond coatings line cutting sapphire that weares and teares back and forth.
The content of the invention
In view of this, it is necessary to which providing one kind reduces cost and can carry efficient sapphire cutter sweep.
A kind of sapphire cutter sweep, it includes a ultra-violet laser source and collimating lens.The ultra-violet laser source is used to send out
Go out a laser beam.The collimation lens is used to for the laser beam to pool a collimated laser beam.The collimated laser beam is used to cut indigo plant
Jewel.The service band of the ultra-violet laser source is 200-400 nanometers.
In this way, due to replacing relatively costly diamond using the lower-cost ultra-violet laser source and the collimation lens,
Can reduces cost.In addition, laser cutting is capable of achieving high-speed cutting, efficiency is improved.
Brief description of the drawings
Fig. 1 is the schematic perspective view of the sapphire cutter sweep of better embodiment of the present invention.
Fig. 2 is the partial plan view of the sapphire cutter sweep of Fig. 1.
Main element symbol description
| Sapphire cutter sweep | 10 |
| Ultra-violet laser source | 100 |
| Laser beam | 110 |
| Collimated laser beam | 120 |
| Collimation lens | 200 |
| Shell | 300 |
| Receiving space | 310 |
| Opening | 312 |
| Workbench | 400 |
| Plummer | 410 |
| Gap | 412 |
| Three-dimensional transfer arm | 420 |
| Control system | 430 |
Following specific embodiment will further illustrate the present invention with reference to above-mentioned accompanying drawing.
Specific embodiment
Refer to Fig. 1-2, the sapphire cutter sweep 10 of better embodiment of the present invention include a ultra-violet laser source 100 and
Collimating lens 200.The ultra-violet laser source 100 is used to send a laser beam 110.The collimation lens 200 is used for the laser beam
110 pool a collimated laser beam 120.The collimated laser beam 120 is used for cutting sapphire 20.The work of the ultra-violet laser source 100
Make wave band for 200-400 nanometers.
In this way, due to replacing relatively costly gold using the lower-cost ultra-violet laser source 100 and the collimation lens 200
Hard rock, it is possible to decrease cost.In addition, laser cutting is capable of achieving high-speed cutting, efficiency is improved.
The ultra-violet laser source 100 is excimer laser source, or uses laser diode or High Power LED.
The preferred operation wavelength of ultra-violet laser source 100 is 350-390 nanometers.
Specifically, the sapphire cutter sweep also includes a shell 300.The shell 300 is formed with a receiving space 310.
The receiving space 310 has an opening 312.The ultra-violet laser source 100 is contained in the receiving space 310, and towards the opening 312
Launch the laser beam 110.The collimation lens 200 closes the opening 312, and converges the laser beam 110.
Specifically, the sapphire cutter sweep 10 also includes a workbench 400.The workbench 400 includes a plummer
410th, a three-dimensional control system 430 of transfer arm 420 and.The plummer 410 is used for carrying and positions the sapphire 20.The carrying
Platform 410 is formed with a gap 412.The sapphire 20 is set across the gap 412.The three-dimensional transfer arm 420 is outer for holding this
Shell 300.The control system 430 is used to drive the three-dimensional transfer arm 420 to be moved by predetermined track and control the ultra-violet laser source
100 open and close are so as to cut the sapphire 20 being positioned on the plummer 410.The predetermined track falls into the gap
In 412, in this way, the sapphire cutter sweep 10 will not cut to the plummer 410.
In a word, those skilled in the art are it should be appreciated that the implementation method of the above is intended merely to explanation originally
Invention, and be not used as being limitation of the invention, as long as within spirit of the invention, to above example institute
The appropriate change and change made all fall within the scope of protection of present invention.
Claims (4)
1. a kind of sapphire cutter sweep, it is characterised in that including a ultra-violet laser source and collimating lens；The ultra-violet laser source
For sending a laser beam；The collimation lens is used to for the laser beam to pool a collimated laser beam；The collimated laser beam is used for
Direct cutting sapphire；The service band of the ultra-violet laser source is 200-400 nanometers；The sapphire cutter sweep also holds including one
Microscope carrier, a three-dimensional transfer arm and a control system for fixing the ultra-violet laser source；The plummer is used to carry positioning sapphire；
The plummer is formed with a gap, the gap be used to make the sapphire across；The control system is used to drive the three-dimensional transfer arm
The open and close of the ultra-violet laser source are moved and controlled by predetermined track, so that the motion track of the collimated laser beam
Fall into the gap；The sapphire cutter sweep also includes a shell；The shell is fixed in the three-dimensional transfer arm, and the shell is formed
There is a receiving space；The receiving space has an opening；The ultra-violet laser source is contained in the receiving space, and for being opened towards this
Mouth launches the laser beam；The collimation lens closes the opening.
2. sapphire cutter sweep as claimed in claim 1, it is characterised in that the ultra-violet laser source is excimer laser source.
3. sapphire cutter sweep as claimed in claim 1, it is characterised in that the ultra-violet laser source using laser diode or
Person's High Power LED.
4. sapphire cutter sweep as claimed in claim 1, it is characterised in that the operation wavelength of the ultra-violet laser source is 350-
390 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210280285.XA CN103567642B (en) | 2012-08-08 | 2012-08-08 | Sapphire cutter sweep |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210280285.XA CN103567642B (en) | 2012-08-08 | 2012-08-08 | Sapphire cutter sweep |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103567642A CN103567642A (en) | 2014-02-12 |
| CN103567642B true CN103567642B (en) | 2017-07-11 |
Family
ID=50040819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210280285.XA Expired - Fee Related CN103567642B (en) | 2012-08-08 | 2012-08-08 | Sapphire cutter sweep |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103567642B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6986393B2 (en) * | 2016-11-15 | 2021-12-22 | ビアメカニクス株式会社 | Substrate processing method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09270565A (en) * | 1996-04-01 | 1997-10-14 | Kyocera Corp | Semiconductor laser diode |
| JP3262080B2 (en) * | 1998-09-25 | 2002-03-04 | 株式会社村田製作所 | Semiconductor light emitting device |
| EP1365880A4 (en) * | 2001-01-31 | 2008-04-16 | Electro Scient Ind Inc | Ultraviolet laser ablative patterning of microstructures in semiconductors |
| SG121700A1 (en) * | 2001-12-28 | 2006-05-26 | Jetsis Int Pte Ltd | A method and related apparatus for cutting a product from a sheet material |
| TWI248244B (en) * | 2003-02-19 | 2006-01-21 | J P Sercel Associates Inc | System and method for cutting using a variable astigmatic focal beam spot |
| JP4486943B2 (en) * | 2006-05-31 | 2010-06-23 | シャープ株式会社 | Cutting apparatus and cutting method of work brittle plate |
| CN101983825A (en) * | 2010-10-09 | 2011-03-09 | 苏州德龙激光有限公司 | Picosecond laser scribing device for light emitting diode (LED) wafer |
| CN201913386U (en) * | 2010-12-30 | 2011-08-03 | 沈阳新松机器人自动化股份有限公司 | Optical fiber transmission laser welding head |
| CN102306624A (en) * | 2011-06-15 | 2012-01-04 | 江苏晶瑞半导体有限公司 | Manufacturing methods for photonic crystal and semiconductor and device comprising semiconductor |
-
2012
- 2012-08-08 CN CN201210280285.XA patent/CN103567642B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN103567642A (en) | 2014-02-12 |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170608 Address after: Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant after: SCIENBIZIP CONSULTING (SHEN ZHEN) CO., LTD. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two Applicant before: Hongfujin Precise Industry (Shenzhen) Co., Ltd. Applicant before: Hon Hai Precision Industry Co., Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170711 Termination date: 20180808 |