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CN103515504A - LED chip and processing technology thereof - Google Patents

LED chip and processing technology thereof Download PDF

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Publication number
CN103515504A
CN103515504A CN201310501616.2A CN201310501616A CN103515504A CN 103515504 A CN103515504 A CN 103515504A CN 201310501616 A CN201310501616 A CN 201310501616A CN 103515504 A CN103515504 A CN 103515504A
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China
Prior art keywords
type
layer
nitride layer
electrode pad
type nitride
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Pending
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CN201310501616.2A
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Chinese (zh)
Inventor
冯亚萍
张溢
金豫浙
李佳佳
李志聪
孙一军
王国宏
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YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO Ltd
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YANGZHOU ZHONGKE SEMICONDUCTOR LIGHTING CO Ltd
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Priority to CN201310501616.2A priority Critical patent/CN103515504A/en
Publication of CN103515504A publication Critical patent/CN103515504A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention relates to an LED chip and a processing technology thereof, and belongs to the technical field of manufacturing of photoelectron devices. The technology comprises the following steps: a P-type nitride layer on an epitaxial wafer substrate is etched to expose an N-type nitride layer; a current blocking layer is manufactured under a P-type electrode bonding pad area, an insulating substance under the P-type electrode bonding pad area, an insulating substance in direct contact with an N-type electrode bonding pad, and an expanding electrode and the P-type nitride layer, and an insulating substance on the side walls of a quantum well and P-type nitride are reserved through etching; an ITO film deposits on the surface of the substrate, a current expanding layer and alloy are manufactured through photoetching, a metal layer is formed on the surface of the substrate through vapor deposition, and after a part of the metal layer is stripped, a P-type electrode bonding pad, an N-type electrode bonding pad and an N metal expanding electrode are formed. Both the P-type electrode bonding pad and the N-type electrode bonding pad of the product are positioned on a P-type light-emitting surface and are the same in height; a part or all of the N metal expanding electrode is in direct contact with the N-type nitride layer. The invention has the advantages that the routing is convenient, the light-emitting efficiency and the brightness of the LED chip on the nitride substrate can be improved.

Description

A kind of LED chip and processing technology thereof
Technical field
The invention belongs to semiconductor photoelectronic device manufacturing technology field, be specifically related to the manufacturing technology of N electrode pad and metal expansion electrode in a kind of light-emitting diode of the nitride based end (LED) manufacture process.
Background technology
In recent years, LED chip technology of the nitride based end has had the development of advancing by leaps and bounds, and is widely used in the various fields such as display screen, backlight and illumination, and these application simultaneously have also also proposed more and more higher requirement to the brightness of LED chip, luminous efficiency.Development along with nitride based end LED growth technology and multi-quantum pit structure, the internal quantum efficiency of nitride based end LED has had very large raising, but the external quantum efficiency of LED chip is not well improved all the time, how by adjusting chip structure, to improve the focus that the outer quantum effect of device becomes people's concern.
As everyone knows, traditional LED chip technique is to adopt the mode etching of inductively coupled plasma to remove a side horizontal part P type nitride, quantum well, exposes N-type nitride and is convenient to make N-type contact, as shown in Figure 1.This mode causes the P type nitride of tube core one side and quantum well by extensive damage, causes this region cannot be luminous.So just cause the efficient lighting area of tube core to dwindle, greatly affected the brightness of tube core, the tube core that is of a size of 10mil * 23mil of take is example, for the reliability encapsulating, the area of electrode pad is generally 2 times of gold thread diameter, so pad typically have a diameter from 80 μ m, i.e. the light-emitting area of N electrode pad loss accounts for 7% left and right of tube core efficient lighting area.The material that existing LED chip PN pad is used is simultaneously the poor metal material of reflectivity, and these materials are larger to the absorption of blue green light, affected the light extraction efficiency of LED chip, also can affect the thermal stability of chip simultaneously.And in chip package process, adopt existing technique, inevitably cause and between PN electrode pad, have obvious difference in height, if P, that N pad Bonding pressure is controlled is improper, easily destroy chip surface, increase the electric leakage of tube core, even dead lamp.
Therefore how to reduce because making PN electrode pad and cause light-emitting area loss, increase the efficient lighting area of LED chip, the routing reliability that improves tube core is the considerable problems of people, is also problem to be solved by this invention simultaneously.
Summary of the invention
The present invention seeks to propose a kind ofly can effectively increase LED chip efficient lighting area, improves the LED chip structure of chip light extraction efficiency and brightness.
The present invention includes the substrate layer, N-type nitride layer, quantum well layer and the P type nitride layer that set gradually, also comprise N metal expansion electrode, P electrode pad and N electrode pad, it is characterized in that described P electrode pad and N electrode pad are separately positioned on outside P type nitride layer, described P electrode pad and N electrode pad are arranged on sustained height, and the part or all of of described N metal expansion electrode directly contacts with N-type nitride layer.
P electrode pad of the present invention and N electrode pad are positioned on P type exiting surface, and highly identical; Metal expansion electrode part or whole contacting with N-type nitride, Main Function is: (1) this chip structure, do not need to destroy P type nitride and the quantum well of N electrode pad and part metals expansion electrode below, the compound photon ,Wei electron hole that emits still can be carried out in electron hole below N electrode pad and part metals expansion electrode provides more recombination luminescence region; (2) adopt the good metal material system of reflection characteristic, compound the emitting after photon of electron hole pair of N-type electrode pad and part metals expansion electrode below, the reflection of process metal level, from the surface escaping of device, can improve brightness and the light extraction efficiency of chip; The heat that reduces electrode pad and metal expansion electrode extinction simultaneously and produce, the thermal reliability of raising tube core; (3) P electrode pad and N electrode pad are all positioned on P type exiting surface, have greatly reduced the difference in height of PN electrode pad, facilitate routing, improve the stability of packaging technology.
In a word, the present invention can increase the efficient lighting area of LED chip greatly, reduces N electrode pad and the absorption of metal expansion electrode to light, improves brightness and the luminous efficiency of chip.
Another object of the present invention is the manufacture method that proposes above LED chip.
The present invention includes the preparation of epitaxial substrate: on substrate layer, make successively N-type nitride layer, quantum well layer and P type nitride layer; Further comprising the steps of:
1) the on-chip P type of epitaxial wafer nitride layer is carried out to etching, remove epitaxial wafer substrate top subregional P type nitride layer and quantum well layer, expose N-type nitride layer; Described lithographic method can be inductively coupled plasma lithographic method, or electron cyclotron resonace lithographic method, or reactive ion etching method.
2) below the P type electrode pad region of design, make current barrier layer: the growing method of using PECVD is at the substrate surface megohmite insulant of growing; Then etching is removed SI semi-insulation material, below reservation P type electrode pad region, megohmite insulant is as current barrier layer, the megohmite insulant that reservation N-type electrode pad directly contacts with P type nitride layer with expansion electrode, as insulating barrier, retains the megohmite insulant of P type nitride and quantum well sidewall as insulating barrier;
3) use the method for evaporation or sputter at the substrate surface deposition ito thin film of step 2 gained, then adopt the method for photoetching to make current extending, and carry out alloy, make ito thin film and P type nitride layer form ohmic contact; Can reduce the touch voltage of P electrode, thereby reduce the operating voltage of device.
4) adopt the method for electron beam evaporation in step 3 gained substrate surface evaporated metal layer, peel off after the metal level of rear section, form P type electrode pad, N-type electrode pad and N metal expansion electrode.
Manufacture craft of the present invention is simple, reliable and stable, facilitates routing, can reduce the exposed area of N-type nitride layer, thereby increases efficient lighting area, improves brightness and the light extraction efficiency of LED chip of the nitride based end.
In addition, the material of the metal level of formation P type electrode pad of the present invention, N-type electrode pad and N metal expansion electrode is any one in Al, Ni/Ag, Ni/Ag/Ti/Au, Ni/Al/Ti/Au, Ni/Ag/Ti/Pt/Au, Ni/Al/Ti/Pt/Au, Ni/Ag/Ni/Au, Ni/Al/Ni/Au or Cr/Al/Ti/Au, the reflection characteristic of these metals is good, can effectively reduce electrode pad and the absorption of metal expansion electrode to light.
In order to facilitate megohmite insulant can cover well the sidewall of P type nitride layer and quantum well, play good insulation and protective effect, the thickness of described megohmite insulant is 2000.
Described megohmite insulant is the oxide skin(coating) of silicon, or the nitride layer of silicon, or the oxynitride layer of silicon, or the oxide skin(coating) of aluminium, and the insulation characterisitic of these materials is good, and growth technique is mature and stable, is convenient to volume production.
The thickness of described deposition ito thin film is 1200.Chip voltage under this thickness condition is low, and brightness is better.
The gross thickness of described Metal Cr/Al/Ti/Au is 20000.Good stability after gold thread contacts with pad, and can not destroy epitaxial loayer in the process of routing.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the present invention.
Embodiment
One, as shown in Figure 1, processing technology:
1, the preparation of epitaxial substrate: make successively N-type nitride layer 2, quantum well layer 3 and P type nitride layer 4 on as sapphire (also can adopt other material using in the industry) substrate layer 1.
2, the on-chip part P type of epitaxial wafer nitride layer 4 is carried out to etching, remove epitaxial wafer substrate top subregional P type nitride layer 4 and quantum well layer 3, expose N-type nitride layer 2.Lithographic method is to be inductively coupled plasma lithographic method, or electron cyclotron resonace lithographic method, or reactive ion etching method.Etching depth is identical with conventional LED manufacture craft with process conditions.
3, below the P type electrode pad region of design, make current barrier layer: using the growing method of PECVD is 2000 megohmite insulants at substrate surface growth thickness; Then etching is removed SI semi-insulation material, and reserve part megohmite insulant is as current barrier layer 10 and the insulating barrier 5 of avoiding N-type electrode pad directly to contact with P type nitride layer with expansion electrode below P type electrode pad region; .Insulating layer material herein can be the oxide skin(coating) (SiO of silicon 2), or the nitride layer of silicon, or the oxynitride layer of silicon, or the oxide skin(coating) of aluminium.
4, the ito thin film that the method for using evaporation or sputter is 1200 at the substrate surface deposit thickness of step 3 gained, then adopts the method for photoetching to make current extending 6.
Done after ito thin film, carried out conventional alloy.
5, the metal level that the method for employing electron beam evaporation is 20000 in step 4 gained substrate surface evaporation gross thickness, peels off rear formation P type electrode pad 7, N-type electrode pad 8 and N metal expansion electrode 9.
Herein, metal level can be selected any one in Al, Ni/Ag, Ni/Ag/Ti/Au, Ni/Al/Ti/Au, Ni/Ag/Ti/Pt/Au, Ni/Al/Ti/Pt/Au, Ni/Ag/Ni/Au, Ni/Al/Ni/Au or Cr/Al/Ti/Au.
N metal expansion electrode and N-type nitride contact area can be square, bar shaped, circle, ellipse or any feasible figure and combination.
N metal expansion electrode all contacts with N-type nitride.
N metal expansion electrode and N-type nitride contact area can be bar shaped or any feasible figure.
Two, product structure characteristic:
P electrode pad 7 and N electrode pad 8 are all positioned on P type exiting surface 4, and highly identical; N metal expansion electrode 9 partly or entirely directly contacts with part N-type nitride layer 2.

Claims (7)

1. a LED chip, comprise the substrate layer, N-type nitride layer, quantum well layer and the P type nitride layer that set gradually, also comprise N metal expansion electrode, P electrode pad and N electrode pad, it is characterized in that described P electrode pad and N electrode pad are separately positioned on outside P type nitride layer, described P electrode pad and N electrode pad are arranged on sustained height, and the part or all of of described N metal expansion electrode directly contacts with N-type nitride layer.
2. a processing technology for LED chip as claimed in claim 1, comprises the preparation of epitaxial substrate: on substrate layer, make successively N-type nitride layer, quantum well layer and P type nitride layer; Characterized by further comprising following steps:
1) the on-chip P type of epitaxial wafer nitride layer is carried out to etching, remove epitaxial wafer substrate top subregional P type nitride layer and quantum well layer, expose N-type nitride layer;
2) below the P type electrode pad region of design, make current barrier layer: the growing method of using PECVD is at the substrate surface megohmite insulant of growing; Then etching is removed SI semi-insulation material, below reservation P type electrode pad region, megohmite insulant is as current barrier layer, the megohmite insulant that reservation N-type electrode pad directly contacts with P type nitride layer with expansion electrode, as insulating barrier, retains the megohmite insulant of P type nitride and quantum well sidewall as insulating barrier;
3) use the method for evaporation or sputter at the substrate surface deposition ito thin film of step 2 gained, then adopt the method for photoetching to make current extending, and carry out alloy, make ito thin film and P type nitride layer form ohmic contact;
4) adopt the method for electron beam evaporation in step 3 gained substrate surface evaporated metal layer, peel off and form P type electrode pad, N-type electrode pad and N metal expansion electrode.
3. processing technology according to claim 2, is characterized in that described metal level in step 4) is any one in Al, Ni/Ag, Ni/Ag/Ti/Au, Ni/Al/Ti/Au, Ni/Ag/Ti/Pt/Au, Ni/Al/Ti/Pt/Au, Ni/Ag/Ni/Au, Ni/Al/Ni/Au or Cr/Al/Ti/Au.
4. processing technology according to claim 2, the thickness that it is characterized in that described megohmite insulant is 2000.
5. according to processing technology described in claim 2 or 4, it is characterized in that described megohmite insulant is the oxide skin(coating) of silicon, or the nitride layer of silicon, or the oxynitride layer of silicon, or the oxide skin(coating) of aluminium.
6. processing technology according to claim 2, the thickness that it is characterized in that described deposition ito thin film is 1200.
7. processing technology according to claim 2, the gross thickness that it is characterized in that described Metal Cr/Al/Ti/Au is 20000.
CN201310501616.2A 2013-10-23 2013-10-23 LED chip and processing technology thereof Pending CN103515504A (en)

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103855149A (en) * 2014-02-20 2014-06-11 中国科学院半导体研究所 Inverted high-voltage light-emitting diode and manufacturing method thereof
CN104037277A (en) * 2014-06-26 2014-09-10 圆融光电科技有限公司 LED flip chip manufacturing method and LED flip chip
CN104795480A (en) * 2014-01-22 2015-07-22 南通同方半导体有限公司 Positive packaging LED chip of N-electrode extension-wire dotted distribution and preparation method of chip
CN105489722A (en) * 2014-10-08 2016-04-13 展晶科技(深圳)有限公司 LED encapsulating structure, LED grain and manufacturing method of LED grain
CN106158842A (en) * 2016-08-24 2016-11-23 厦门忠信达工贸有限公司 Formal dress chip-scale white light LEDs filament light sources and method for packing thereof
CN106784231A (en) * 2016-11-28 2017-05-31 华灿光电(浙江)有限公司 LED chip and manufacturing method thereof
CN109742208A (en) * 2018-12-13 2019-05-10 华中科技大学鄂州工业技术研究院 A kind of deep ultraviolet LED component and preparation method thereof
CN110088922A (en) * 2018-04-08 2019-08-02 厦门市三安光电科技有限公司 A kind of LED chip construction and preparation method thereof
CN111211482A (en) * 2020-03-04 2020-05-29 常州纵慧芯光半导体科技有限公司 Vertical cavity surface emitting laser and manufacturing method and application thereof
CN111313235A (en) * 2020-03-04 2020-06-19 常州纵慧芯光半导体科技有限公司 Vertical cavity surface emitting laser and manufacturing method thereof
CN111987209A (en) * 2015-11-18 2020-11-24 晶元光电股份有限公司 Light emitting element
CN113921668A (en) * 2021-09-10 2022-01-11 天津三安光电有限公司 LED structure and manufacturing method
US11637223B2 (en) 2018-04-08 2023-04-25 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting diode device
CN117712245A (en) * 2024-02-05 2024-03-15 江西兆驰半导体有限公司 Flip LED chip and preparation method thereof
WO2024113477A1 (en) * 2022-11-30 2024-06-06 华引芯(武汉)科技有限公司 Light-emitting element and manufacturing method therefor
CN118231536A (en) * 2024-05-22 2024-06-21 华引芯(武汉)科技有限公司 High-brightness inverted-mounting gauge chip and preparation method thereof

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CN102427107A (en) * 2011-12-09 2012-04-25 祝进田 High-power white light-emitting diode (LED) flip chip and manufacturing method thereof
CN102931324A (en) * 2011-11-25 2013-02-13 俞国宏 LED chip
CN203521455U (en) * 2013-10-23 2014-04-02 扬州中科半导体照明有限公司 LED chip

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JP2000261042A (en) * 1999-03-05 2000-09-22 Toshiba Corp Semiconductor light emitting element and manufacture of the same
CN102931324A (en) * 2011-11-25 2013-02-13 俞国宏 LED chip
CN102427107A (en) * 2011-12-09 2012-04-25 祝进田 High-power white light-emitting diode (LED) flip chip and manufacturing method thereof
CN203521455U (en) * 2013-10-23 2014-04-02 扬州中科半导体照明有限公司 LED chip

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104795480A (en) * 2014-01-22 2015-07-22 南通同方半导体有限公司 Positive packaging LED chip of N-electrode extension-wire dotted distribution and preparation method of chip
CN103855149A (en) * 2014-02-20 2014-06-11 中国科学院半导体研究所 Inverted high-voltage light-emitting diode and manufacturing method thereof
CN104037277A (en) * 2014-06-26 2014-09-10 圆融光电科技有限公司 LED flip chip manufacturing method and LED flip chip
CN105489722B (en) * 2014-10-08 2018-10-26 展晶科技(深圳)有限公司 Light-emitting diode encapsulation structure, LED crystal particle and its manufacturing method
CN105489722A (en) * 2014-10-08 2016-04-13 展晶科技(深圳)有限公司 LED encapsulating structure, LED grain and manufacturing method of LED grain
CN111987209A (en) * 2015-11-18 2020-11-24 晶元光电股份有限公司 Light emitting element
CN111987208B (en) * 2015-11-18 2023-07-04 晶元光电股份有限公司 Light-emitting element
CN111987208A (en) * 2015-11-18 2020-11-24 晶元光电股份有限公司 Light emitting element
CN106158842A (en) * 2016-08-24 2016-11-23 厦门忠信达工贸有限公司 Formal dress chip-scale white light LEDs filament light sources and method for packing thereof
CN106784231A (en) * 2016-11-28 2017-05-31 华灿光电(浙江)有限公司 LED chip and manufacturing method thereof
CN110088922B (en) * 2018-04-08 2022-04-15 厦门市三安光电科技有限公司 Light emitting diode chip structure and manufacturing method thereof
CN110088922A (en) * 2018-04-08 2019-08-02 厦门市三安光电科技有限公司 A kind of LED chip construction and preparation method thereof
WO2019195960A1 (en) * 2018-04-08 2019-10-17 厦门市三安光电科技有限公司 Light-emitting diode chip structure and manufacturing method therefor
US11637223B2 (en) 2018-04-08 2023-04-25 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting diode device
CN114695609A (en) * 2018-04-08 2022-07-01 厦门市三安光电科技有限公司 Light emitting diode chip structure and manufacturing method thereof
CN109742208A (en) * 2018-12-13 2019-05-10 华中科技大学鄂州工业技术研究院 A kind of deep ultraviolet LED component and preparation method thereof
CN111211482A (en) * 2020-03-04 2020-05-29 常州纵慧芯光半导体科技有限公司 Vertical cavity surface emitting laser and manufacturing method and application thereof
CN111313235B (en) * 2020-03-04 2021-09-14 常州纵慧芯光半导体科技有限公司 Vertical cavity surface emitting laser and manufacturing method thereof
CN111211482B (en) * 2020-03-04 2021-09-14 常州纵慧芯光半导体科技有限公司 Vertical cavity surface emitting laser and manufacturing method and application thereof
CN111313235A (en) * 2020-03-04 2020-06-19 常州纵慧芯光半导体科技有限公司 Vertical cavity surface emitting laser and manufacturing method thereof
CN113921668A (en) * 2021-09-10 2022-01-11 天津三安光电有限公司 LED structure and manufacturing method
CN113921668B (en) * 2021-09-10 2024-09-13 天津三安光电有限公司 LED structure and manufacturing method
WO2024113477A1 (en) * 2022-11-30 2024-06-06 华引芯(武汉)科技有限公司 Light-emitting element and manufacturing method therefor
CN117712245A (en) * 2024-02-05 2024-03-15 江西兆驰半导体有限公司 Flip LED chip and preparation method thereof
CN118231536A (en) * 2024-05-22 2024-06-21 华引芯(武汉)科技有限公司 High-brightness inverted-mounting gauge chip and preparation method thereof

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