CN103515338A - Semiconductor module - Google Patents
Semiconductor module Download PDFInfo
- Publication number
- CN103515338A CN103515338A CN201310056639.7A CN201310056639A CN103515338A CN 103515338 A CN103515338 A CN 103515338A CN 201310056639 A CN201310056639 A CN 201310056639A CN 103515338 A CN103515338 A CN 103515338A
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- China
- Prior art keywords
- semiconductor module
- elastic component
- radiator
- housing
- thermal grease
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20509—Multiple-component heat spreaders; Multi-component heat-conducting support plates; Multi-component non-closed heat-conducting structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a semiconductor module. An object of the invention is to provide a semiconductor module capable of suppressing leakage of heat conductive grease interposed between the semiconductor module and a heat sink. The semiconductor module (10) can be attached to the heat sink (5). The semiconductor module (10) provided by the invention includes a case (2) for housing a component of the semiconductor module (10), and an elastic member (1) having one end engaging with the case (2) and an opposite end in abutting contact with the heat sink (5). A gap (6) for applying heat conductive grease is arranged between the case (2) and the heat sink (5) by using the elastic member (1).
Description
Technical field
The present invention relates to semiconductor module, particularly can be assemblied in the semiconductor module of radiator (heat sink).
Background technology
About semiconductor module, particularly tackle large-power semiconductor module, the heat producing when to work is dispelled the heat, and is generally assemblied in radiator and uses.In addition,, for the heat of semiconductor module is reached to radiator effectively, between semiconductor module and radiator, be coated with thermal grease conduction (grease) (for example,, with reference to patent documentation 1).
In the past, in the bottom surface of semiconductor module, disposed adhesively elastic component, utilized bonding this elastic component of bonding agent and radiator, thus semiconductor module was assemblied in to radiator.
In addition, by the thermal grease conduction being held between semiconductor module and radiator, configure this elastic component around, thereby also play the effect that prevents that thermal grease conduction from flowing out.
Prior art document
Patent documentation
Patent documentation 1: No. 4745 communiques of TOHKEMY 2008 –.
The problem that invention will solve
In above-mentioned prior art, with bottom surface and the radiator of the bonding elastic component of bonding agent and semiconductor module.Thereby, when bonding portion is due to the impact of heating of semiconductor module etc. and when deteriorated, thermal grease conduction flows out from deteriorated position, cannot carry out validly the heat radiation of semiconductor module, has the problem of the hydraulic performance decline of semiconductor module.
In addition, in the situation that the deteriorated of bonding portion further increase the weight of, the problem that also exists semiconductor module to come off from radiator.
Particularly in the situation that the angle of assembling of semiconductor module is not the problem more than level easily produces with respect to ground.
Summary of the invention
The present invention completes in order to solve above problem, and its object is to provide a kind of semiconductor module that can suppress being clamped in the outflow of the thermal grease conduction between semiconductor module and radiator.
For solving the scheme of problem
Semiconductor module of the present invention is the semiconductor module that can be assemblied in radiator, it is characterized in that, possesses: housing, accommodate the structural element of semiconductor module; And elastic component, one end is embedded in housing, and the other end is connected to radiator, utilizes this elastic component between housing and radiator, to be provided with for clamping the gap of thermal grease conduction.
Invention effect
According to the present invention, because being embedded in housing, elastic component is fixed, so in the situation that the gap clamping between housing and radiator has thermal grease conduction, can suppress to be departed from from housing by elastic component the outflow of the thermal grease conduction causing.In addition, can suppress to be departed from from housing by elastic component coming off of the semiconductor module main body cause.Thereby, can realize the long-term use of semiconductor module.
Accompanying drawing explanation
Fig. 1 is sectional view and the ground plan of the semiconductor module of execution mode 1.
Fig. 2 is sectional view and the ground plan of the semiconductor module of execution mode 2.
Fig. 3 is sectional view and the ground plan of the semiconductor module of execution mode 3.
Fig. 4 is the ground plan of the semiconductor module of execution mode 4.
Embodiment
<execution mode 1>
<structure>
Sectional view and the ground plan of the semiconductor module 10 of present embodiment are shown respectively in Fig. 1 (a) and (b).As shown in Fig. 1 (a), the semiconductor module of present embodiment 10 is assemblied in to radiator 5 and uses.Have again, in 6 clampings of the gap of semiconductor module 10 and radiator 5, have thermal grease conduction.
In the present embodiment, consider that the angle of assembling of semiconductor module 10 is not the situation of level with respect to ground, for example, consider angle of assembling situation perpendicular to the ground.In Fig. 1 (a) and (b), x direction is made as to lower direction.
In the bottom surface of housing 2, dispose elastic component 1.The bottom surface of one end of elastic component 1 and housing 2 is chimeric, and telescoping part is H word shape.In addition, the other end of elastic component 1 is connected to radiator 5.
As shown in Fig. 1 (b), elastic component 1 is along the lower direction Ce limit of housing 2 bottom surfaces and be configured with limit in opposite directions, lower direction Ce limit.Particularly, along the lower direction Ce limit configuration elastic component 1 of housing 2 bottom surfaces, can suppress thus thermal grease conduction because gravity flows out.
Have, elastic component 1 is for example rubber resin again.In addition, the material of radiator 5 is aluminium, copper etc.In addition,, for efficiency is dispelled the heat well, also can be formed with fin (fin) at radiator 5.
In the situation that semiconductor module 10 being fixed on to radiator 5, utilize bonding agent by the other end of elastic component 1 and radiator 5 is bonding is fixed.Or, also can carry out screw to housing 2 and radiator 5 and fix, thus elastic component 1 is crimped on to radiator 5 and is fixed.In this case, because elastic component 1 is embedded in housing 2 in advance, so easily carry out the fixing operation of screw.
By via elastic component 1, housing 2 being fixed on to radiator 5, thereby be provided with gap 6 between semiconductor module 10 and radiator 5.For the heat being produced by semiconductor module 10 being reached effectively to radiator 5 ，Gai gap 6 clampings, there is thermal grease conduction.At this, thermal grease conduction is general thermal grease conduction, for example, be to take the thermal grease conduction that silicon is main component.
<effect>
The semiconductor module 10 of present embodiment is the semiconductor module 10 that can be assemblied in radiator 5, it is characterized in that possessing: housing 2, accommodate the structural element of semiconductor module 10; And elastic component 1, one end is embedded in housing 2, and the other end is connected to radiator 5, utilizes elastic component 1 between housing 2 and radiator 5, to be provided with for clamping the gap 6 of thermal grease conduction.
Therefore, because elastic component 1 is fixed with housing 2 is chimeric, so in the situation that gap 6 clampings between housing 2 and radiator 5 have thermal grease conduction, can suppress to be departed from from housing 2 by elastic component 1 outflow of the thermal grease conduction causing.In addition, can suppress to be departed from from housing 2 by elastic component 1 coming off of semiconductor module 10 main bodys that cause.Thereby, can realize the long-term use of semiconductor module 10.
In addition, the elastic component 1 that the semiconductor module 10 of present embodiment possesses is characterised in that, the part chimeric with housing 2 is H word shape.
Therefore, by making the telescoping part of elastic component, be H word shape, thereby elastic component 1 can be fixed on to housing 2 reliably.And then, by making telescoping part, be H word shape, thereby can obtain significantly areas elastic component 1 and parts radiator 5 butts, when semiconductor module 10 is assemblied in to radiator 5, elastic component 1 and radiator 5 is bonding or crimping more reliably.Thereby, can suppress thermal grease conduction and flow out from the gap 6 between housing 2 and radiator 5.
<execution mode 2>
Sectional view and the ground plan of the semiconductor module 10 of present embodiment are shown respectively in Fig. 2 (a) and (b).In the semiconductor module 10 of present embodiment, the fitting portion of elastic component 1 is T word shape.Due to other structure and execution mode 1(Fig. 1 (a) and (b)) identical, so description thereof is omitted.Have again, in Fig. 2 (a) and (b), also similarly x direction is made as to lower direction with Fig. 1 (a) and (b).
<effect>
The elastic component 1 that the semiconductor module 10 of present embodiment possesses is characterised in that, the part chimeric with housing 2 is T word shape.
Therefore, with execution mode 1 similarly, can suppress thermal grease conduction and flow out from housing 2 and the coupling part of elastic component 1.In addition, can suppress from housing 2, to depart from semiconductor module 10 main bodys the coming off from radiator of causing by elastic component 1.
And then, by making the fitting portion of elastic component 1, be T word shape, thereby compare with execution mode 1, can realize the miniaturization of elastic component 1.Thereby the materials'use amount that can cut down elastic component 1, therefore can reduce manufacturing cost.
<execution mode 3>
Sectional view and the ground plan of the semiconductor module 10 of present embodiment are shown respectively in Fig. 3 (a) and (b).In Fig. 3 (a) and (b), x direction is made as to lower direction.
As shown in Figure 3 (b), in the semiconductor module 10 of present embodiment, one side only dispose elastic component 1 in the x direction side of the bottom surface of housing 2.Due to other structure and execution mode 2(Fig. 2 (a) and (b)) identical, so description thereof is omitted.
Even in the situation that the thermal grease conduction that is held on the gap 6 between semiconductor module 10 and radiator 5 due to gravity downward direction mobile, as long as in lower direction side be at least one side configuration elastic component 1 of x direction side, will be to preventing that the outflow of thermal grease conduction from being effective.In addition, can utilize elastic component 1 that semiconductor module 10 is fixed on to radiator 5.
<effect>
The elastic component 1 that the semiconductor module 10 of present embodiment possesses is characterised in that, is only configured in one side of housing 2.
Therefore, as long as only at one side of the lower direction side of housing 2 configuration elastic component 1, just can obtain the effect identical with execution mode 2 and further cut down elastic component 1 use amount, realize the further reduction of manufacturing cost.
<execution mode 4>
The ground plan of the semiconductor module 10 of present embodiment shown in Figure 4.Sectional view and execution mode 2(Fig. 2 (a)) identical.As shown in Figure 4, the elastic component 1 that the semiconductor module 10 of present embodiment possesses is configured along the surrounding of the bottom surface of housing 2.Because structure is in addition identical with execution mode 2, so description thereof is omitted.
<effect>
The elastic component 1 that the semiconductor module 10 of present embodiment possesses is characterised in that, along the surrounding of housing 2, is configured.
Therefore, in the situation that semiconductor module 10 being assemblied in to radiator 5, the thermal grease conduction that is clamped in the gap 6 between semiconductor module 10 and radiator 5 is surrounded by elastic component 1, so the semiconductor module 10 of present embodiment can prevent the outflow of thermal grease conduction more reliably.
Have, the present invention can freely combine each execution mode or each execution mode is suitably out of shape, be omitted in its invention scope again.
The explanation of Reference numeral:
1 elastic component, 2 housings, 3a semiconductor element, 3b aluminum steel, 3c main electrode, 3d lid, 4 metal substrates, 5 radiators, 6 gaps, 10 semiconductor modules.
Claims (5)
1. a semiconductor module, can be assemblied in radiator, it is characterized in that possessing:
Housing, accommodates the structural element of described semiconductor module; And
Elastic component, one end is embedded in described housing, and the other end is connected to described radiator,
Utilize described elastic component to be provided with for clamping the gap of thermal grease conduction between described housing and described radiator.
2. semiconductor module according to claim 1, is characterized in that,
In described elastic component, the part chimeric with described housing is H word shape.
3. semiconductor module according to claim 1, is characterized in that,
In described elastic component, the part chimeric with described housing is T word shape.
4. according to the semiconductor module described in any one of claim 1～3, it is characterized in that,
Described elastic component is only configured in one side of described housing.
5. according to the semiconductor module described in any one of claim 1～3, it is characterized in that,
Described elastic component is configured along the surrounding of described housing.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012141616A JP5623463B2 (en) | 2012-06-25 | 2012-06-25 | Semiconductor module |
| JP2012-141616 | 2012-06-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103515338A true CN103515338A (en) | 2014-01-15 |
| CN103515338B CN103515338B (en) | 2016-12-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310056639.7A Active CN103515338B (en) | 2012-06-25 | 2013-02-22 | Semiconductor module |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9357678B2 (en) |
| JP (1) | JP5623463B2 (en) |
| CN (1) | CN103515338B (en) |
| DE (1) | DE102013207552B4 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105984453A (en) * | 2015-03-20 | 2016-10-05 | 日本奥托立夫日信制动器系统株式会社 | Vehicle control unit and vehicle brake system |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9357670B2 (en) * | 2014-02-18 | 2016-05-31 | Lockheed Martin Corporation | Efficient heat transfer from conduction-cooled circuit cards |
| JP2024006810A (en) * | 2022-07-04 | 2024-01-17 | 日立Astemo株式会社 | Electric circuit body and power conversion device |
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2012
- 2012-06-25 JP JP2012141616A patent/JP5623463B2/en active Active
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2013
- 2013-02-22 CN CN201310056639.7A patent/CN103515338B/en active Active
- 2013-03-04 US US13/784,733 patent/US9357678B2/en active Active
- 2013-04-25 DE DE102013207552.9A patent/DE102013207552B4/en active Active
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| JP2003168772A (en) * | 2001-11-30 | 2003-06-13 | Denso Corp | Package structure of power module |
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| CN105984453A (en) * | 2015-03-20 | 2016-10-05 | 日本奥托立夫日信制动器系统株式会社 | Vehicle control unit and vehicle brake system |
| CN105984453B (en) * | 2015-03-20 | 2019-11-12 | 日本奥托立夫日信制动器系统株式会社 | Vehicle console device and Vehicle brake system |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130342999A1 (en) | 2013-12-26 |
| DE102013207552B4 (en) | 2019-06-06 |
| DE102013207552A1 (en) | 2014-01-02 |
| CN103515338B (en) | 2016-12-28 |
| JP2014007267A (en) | 2014-01-16 |
| US9357678B2 (en) | 2016-05-31 |
| JP5623463B2 (en) | 2014-11-12 |
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