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CN103435345B - Piezoceramic material used for low and medium frequency narrow band ceramic filters - Google Patents

Piezoceramic material used for low and medium frequency narrow band ceramic filters Download PDF

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CN103435345B
CN103435345B CN201310349028.1A CN201310349028A CN103435345B CN 103435345 B CN103435345 B CN 103435345B CN 201310349028 A CN201310349028 A CN 201310349028A CN 103435345 B CN103435345 B CN 103435345B
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piezoelectric ceramics
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low frequency
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CN103435345A (en
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黄新友
高春华
李军
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Jiangsu University
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Jiangsu University
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Abstract

The invention relates to the technical field of inorganic nonmetallic materials, particularly to a piezoceramic material used for low and medium frequency narrow band ceramic filters, which comprises the following components: (xPbNb2O6-mBiCoO3-y(Pb0.85Sr0.1Ba0.05) (Zr0.50Ti0.50)O3), LaMnO3, WO3 and LiNbO3, wherein the quantity of LaMnO3 is 0.01-0.6% of mass of the (xPbNb2O6-mBiCoO3-y(Pb0.85Sr0.1Ba0.05) (Zr0.50Ti0.50)O3); the quantity of WO3 is 0.03-0.8% of mass of the (xPbNb2O6-mBiCoO3-y(Pb0.85Sr0.1Ba0.05) (Zr0.50Ti0.50)O3); the quantity of LiNbO3 is 0.01-0.6% of mass of the (xPbNb2O6-mBiCoO3-y(Pb0.85Sr0.1Ba0.05) (Zr0.50Ti0.50)O3); X is less than or equal to 0.1 mol and greater than or equal to 0.01 mol; m is less than or equal to 0.1 mol and greater than or equal to 0.01 mol; y is less than or equal to 0.98 mol and greater than or equal to 0.8 mol; x plus m and plus y equals to 1. The dielectric constant of the prepared piezoceramic material is about 1500, the mechanical quality factor is about 4200, the radial electromechanical coupling factor is about 0.20, the temperature coefficient of resonance frequency is less than 0.01% (minus 55-85 DEG C), the time stability of resonance frequency is excellent and less than 0.005% (aging for 200 hours), and the dielectric loss is less than 0.03%; the piezoceramic material has excellent stability and high safety during the using process.

Description

A kind of medium and low frequency narrow bend ceramic filter piezoceramic material
Technical field
The present invention relates to technical field of inorganic nonmetallic materials, refer in particular to a kind of medium and low frequency narrow bend ceramic filter piezoceramic material, it adopts the preparation method of conventional solid phase method pottery, utilize general chemistry raw material, prepare high stable high performance piezoelectric pottery, this piezoelectric ceramics is suitable for preparing medium and low frequency narrow bend ceramic filter.
Technical background
Piezoelectric ceramics has excellent piezoelectric effect, it is the class applied in function ceramics widely, as sensor, transverter, wave filter etc., play an important role in national economy and national defense industry, because the piezoelectric property of leadless piezoelectric ceramics and the piezoelectric property of Pb-based lanthanumdoped zirconate titanates base piezoelectric ceramic differ greatly, at present, the application of piezoelectric ceramics mainly Pb-based lanthanumdoped zirconate titanates base and ternary thereof and four-component-system piezoelectric ceramics; At present, make the device mainly Pb-based lanthanumdoped zirconate titanates base piezoelectric ceramics such as medium and low frequency narrow bend ceramic filter, but its temperature stability and time stability poor, along with the change of temperature and time, the larger drift of easy generation resonant frequency, the larger change of relative bandwidth, Qm is not high enough, is difficult to the requirement meeting medium and low frequency narrow bend ceramic filter; In order to improve the performance of piezoceramic material, normal adopt two kinds of approach: one is by adding ternary or quaternary to form the object that novel material reaches modification in body material; Two is different on the impact of material property according to different dopant ion, carries out doping vario-property to material; The present invention obtains the device High-temperature stabilization such as medium and low frequency narrow bend ceramic filter high performance lead niobate cobalt acid bismuth Pb-based lanthanumdoped zirconate titanates four-component-system piezoelectric ceramics, generally, the sintering temperature of lead titanate piezoelectric ceramics is at 1260 DEG C ~ 1280 DEG C, the sintering temperature of piezoelectric ceramics of the present invention is 1050 ~ 1080 DEG C, reduce energy consumption so greatly, cost-saving, the volatilization of energy inhibited oxidation lead simultaneously.
Summary of the invention
The object of the present invention is achieved like this:
A kind of medium and low frequency narrow bend ceramic filter piezoelectric ceramics, its formula is: (xPbNb 2o 6-mBiCoO 3-y (Pb 0.85sr 0.1ba 0.05) (Zr 0.50ti 0.50) O 3)+0.01 ~ 0.6 wt.% LaMnO 3+ 0.03 ~ 0.8 wt.% WO 3+ 0.01 ~ 0.6wt.%LiNbO 3; Wherein, 0.01≤x≤0.1 mol, 0.01≤m≤0.1 mol, 0.8≤y≤0.98 mol, x+m+y=1.Wherein PbNb 2o 6, BiCoO 3, (Pb 0.85sr 0.1ba 0.05) (Zr 0.50ti 0.50) O 3, LaMnO 3, LiNbO 3adopt conventional chemical feedstocks with Solid phase synthesis respectively.
LaMnO 3, WO 3, LiNbO 3add-on be matrix (xPbNb 2o 6-mBiCoO 3-y (Pb 0.85sr 0.1ba 0.05) (Zr 0.50ti 0.50) O 3) 0.01 ~ 0.6 %, 0.03 ~ 0.8 % and 0.01 ~ 0.6% of quality.
The specific inductivity of described piezoelectric ceramics is 1483-1512, Qm is 4189-4230, radial electromechanical coupling factor is 0.18-0.22, and temperature coefficient of resonance frequency is 0.004%-0.008% in-55 ~+85 DEG C of temperature ranges, the resonant frequency time stability t after aging 200 hours frfor 0.0022%-0.0041%, dielectric loss is 0.018%-0.028%.
The PbNb that piezoelectric ceramics of the present invention is used 2o 6preparation process comprise: by the chemical feedstocks Pb of routine 3o 4
And Nb 2o 5by 1/3:1 molar ratio ingredient, after ground and mixed is even, put into alumina crucible in 900 DEG C of insulations
120 minutes, solid state reaction kinetics PbNb 2o 6, ground 200 mesh sieves after cooling, for subsequent use.
Piezoelectric ceramics of the present invention BiCoO used 3preparation process comprise: by the chemical feedstocks Bi of routine 2o 3with
Co 2o 3by 1/2:1/2 molar ratio ingredient, after ground and mixed is even, put into alumina crucible in 900 DEG C ~ 950 DEG C
Be incubated 120 minutes, solid state reaction kinetics BiCoO 3, ground 200 mesh sieves after cooling, for subsequent use.
Piezoelectric ceramics of the present invention LaMnO used 3preparation process comprise: by the chemical feedstocks La of routine 2o 3
And MnO 2by 1/2:1 molar ratio ingredient, after ground and mixed is even, put into alumina crucible in 900 DEG C ~ 950 DEG C
Be incubated 120 minutes, solid state reaction kinetics LaMnO 3, ground 200 mesh sieves after cooling, for subsequent use.
The present invention adopts conventional solid phase method ceramic preparation technique, namely first prepares burden admixtion ball mill pulverizing by formula
Mixing, after drying, adds tackiness agent granulation, then is pressed into green sheet, then carry out binder removal in atmosphere
And sintering, after insulation also naturally cooling, obtain lead niobate cobalt acid bismuth Pb-based lanthanumdoped zirconate titanates four-component-system piezoelectric ceramics,
By electrode on pottery, then polarize, aging, survey performance.
The formula of above-mentioned medium and low frequency narrow bend ceramic filter piezoelectric ceramics preferably adopts following two kinds of schemes:
(xPbNb 2o 6-mBiCoO 3-y (Pb 0.85sr 0.1ba 0.05) (Zr 0.50ti 0.50) O 3)+0.03 ~ 0.4wt.% LaMnO 3+ 0.04 ~ 0.6 wt.% WO 3+ 0.03 ~ 0.5wt.%LiNbO 3; Wherein, 0.02≤x≤0.08 mol, 0.02≤m≤0.08 mol, 0.84≤y≤0.96 mol, x+m+y=1;
(xPbNb 2o 6-mBiCoO 3-y (Pb 0.85sr 0.1ba 0.05) (Zr 0.50ti 0.50) O 3)+0.04 ~ 0.3 wt.% LaMnO 3+ 0.05 ~ 0.5 wt.% WO 3+ 0.04 ~ 0.4wt.%LiNbO 3; Wherein, 0.025≤x≤0.06 mol, 0.025≤m≤0.06 mol, 0.88≤y≤0.95 mol, x+m+y=1.
Compared with prior art, tool has the following advantages in the present invention:
The specific inductivity of 1, prepared piezoelectric ceramics is about about 1500, Qm (Q m) be about 4200, radial electromechanical coupling factor (K p) be about 0.20, temperature coefficient of resonance frequency (τ fr) be less than 0.01% (-55 ~+85 DEG C), the good (t of resonant frequency time stability fr) be less than 0.005%(aging 200 hours), dielectric loss (tan δ) is less than 0.03%; In use procedure, stability is good, and security is high.
2, the piezoelectric ceramics performance of this patent is easy to regulate, with the requirement of the devices such as satisfied serial medium and low frequency narrow bend ceramic filter.
3, this pottery adopts conventional solid phase method piezoelectric ceramics preparation technology to be prepared, and the raw material used is conventional chemical feedstocks, and cost of manufacture is low.The sintering temperature of piezoelectric ceramics of the present invention is 1050 ~ 1080 DEG C, reduces energy consumption so greatly, cost-saving, simultaneously the volatilization of energy inhibited oxidation lead.
Embodiment
Now the invention will be further described in conjunction with the embodiments, and table 1 provides the formula of embodiments of the invention totally 4 samples.
The main raw material of the embodiments of the invention formula of totally 4 samples adopts conventional chemical feedstocks and pre-synthesis PbNb 2o 6, BiCoO 3, (Pb 0.85sr 0.1ba 0.05) (Zr 0.50ti 0.50) O 3, LaMnO 3, LiNbO 3prepare burden by above-mentioned formula, the material distilled water prepared or deionized water are adopted the mixing of planetary ball mill ball milling, material: ball: water=1:3:(0.6 ~ 1.0), ball milling is after 4 ~ 8 hours, dry to obtain dry mash, the polyvinyl alcohol solution that the concentration accounting for its weight 5 ~ 8% is 10% (weight percent) is added in dry mash, carry out granulation, mixed rear mistake 40 mesh sieve, under 20 ~ 30Mpa pressure, carry out dry-pressing again become green sheet, then at temperature is 750 ~ 850 DEG C, insulation carries out binder removal in 1 ~ 4 hour, and temperature rise rate is 50 ~ 100 DEG C/h; Then sample is placed in alumina crucible, airtight sintering, sintering temperature is 1050 ~ 1080 DEG C, and soaking time is 1 ~ 2 hour, namely obtains ceramic plate; Ceramic plate two sides after grinding and polishing is coated to silver electrode, and about 120 DEG C polarization in silicone oil, polarized electric field is 3000 ~ 5000 volts/mm, and the polarization time is 15 ~ 20 minutes; Polarize complete, test resonant frequency, through overaging 200 hours test resonant frequencies, calculates resonant frequency time stability; Polarize complete, through overaging 48 hours, test other performances.
The performance of above-mentioned each formula sample lists in table 2, and the specific inductivity (ε) of piezoelectric ceramics prepared is as can be seen from Table 2 about about 1500, Qm (Q m) be about 4200, radial electromechanical coupling factor (K p) be about 0.20, temperature coefficient of resonance frequency (τ fr) be less than 0.01% (-55 ~+85 DEG C), the good (t of resonant frequency time stability fr) be less than 0.005%(aging 200 hours), dielectric loss (tan δ) is less than 0.03%.
The formula of table 1 embodiments of the invention totally 4 samples
Table 2 embodiments of the invention totally 4 formula samples performance
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.

Claims (6)

1. a medium and low frequency narrow bend ceramic filter piezoelectric ceramics, sintering temperature is 1050 ~ 1080 DEG C, the specific inductivity of described piezoelectric ceramics is 1483-1512, Qm is 4189-4230, radial electromechanical coupling factor is 0.18-0.22, temperature coefficient of resonance frequency is 0.004%-0.008% in-55 ~+85 DEG C of temperature ranges, the resonant frequency time stability t after aging 200 hours frfor 0.0022%-0.0041%, dielectric loss is 0.018%-0.028%, it is characterized in that: consisting of of described piezoelectric ceramics: (xPbNb 2o 6-mBiCoO 3-y (Pb 0.85sr 0.1ba 0.05) (Zr 0.50ti 0.50) O 3)+0.01 ~ 0.6 wt.% LaMnO 3+ 0.03 ~ 0.8 wt.% WO 3+ 0.01 ~ 0.6wt.%LiNbO 3; Wherein, 0.01≤x≤0.1 mol, 0.01≤m≤0.1 mol, 0.8≤y≤0.98 mol, x+m+y=1; Wherein PbNb 2o 6, BiCoO 3, (Pb 0.85sr 0.1ba 0.05) (Zr 0.50ti 0.50) O 3, LaMnO 3, LiNbO 3adopt conventional chemical feedstocks with Solid phase synthesis respectively; LaMnO 3, WO 3, LiNbO 3add-on be matrix (xPbNb 2o 6-mBiCoO 3-y (Pb 0.85sr 0.1ba 0.05) (Zr 0.50ti 0.50) O 3) 0.01 ~ 0.6 %, 0.03 ~ 0.8 % and 0.01 ~ 0.6% of quality.
2. a kind of medium and low frequency narrow bend ceramic filter piezoelectric ceramics as claimed in claim 1, is characterized in that: described PbNb 2o 6preparation process comprise: by the chemical feedstocks Pb of routine 3o 4and Nb 2o 5by 1/3:1 molar ratio ingredient, put into alumina crucible after ground and mixed is even in 900 DEG C of insulations 120 minutes, solid state reaction kinetics PbNb 2o 6, ground 200 mesh sieves after cooling, for subsequent use.
3. a kind of medium and low frequency narrow bend ceramic filter piezoelectric ceramics as claimed in claim 1, is characterized in that: described BiCoO 3preparation process comprise: by the chemical feedstocks Bi of routine 2o 3and Co 2o 3by 1/2:1/2 molar ratio ingredient, put into alumina crucible after ground and mixed is even in 900 DEG C ~ 950 DEG C insulations 120 minutes, solid state reaction kinetics BiCoO 3, ground 200 mesh sieves after cooling, for subsequent use.
4. a kind of medium and low frequency narrow bend ceramic filter piezoelectric ceramics as claimed in claim 1, is characterized in that: described LaMnO 3preparation process comprise: by the chemical feedstocks La of routine 2o 3and MnO 2by 1/2:1 molar ratio ingredient, put into alumina crucible after ground and mixed is even in 900 DEG C ~ 950 DEG C insulations 120 minutes, solid state reaction kinetics LaMnO 3, ground 200 mesh sieves after cooling, for subsequent use.
5. a kind of medium and low frequency narrow bend ceramic filter piezoelectric ceramics as claimed in claim 1, is characterized in that: consisting of of described piezoelectric ceramics: (xPbNb 2o 6-mBiCoO 3-y (Pb 0.85sr 0.1ba 0.05) (Zr 0.50ti 0.50) O 3)+0.03 ~ 0.4wt.%LaMnO 3+ 0.04 ~ 0.6 wt.% WO 3+ 0.03 ~ 0.5wt.%LiNbO 3; Wherein, 0.02≤x≤0.08 mol, 0.02≤m≤0.08 mol, 0.84≤y≤0.96 mol, x+m+y=1.
6. a kind of medium and low frequency narrow bend ceramic filter piezoelectric ceramics as claimed in claim 1, is characterized in that: consisting of of described piezoelectric ceramics: (xPbNb 2o 6-mBiCoO 3-y (Pb 0.85sr 0.1ba 0.05) (Zr 0.50ti 0.50) O 3)+0.04 ~ 0.3 wt.% LaMnO 3+ 0.05 ~ 0.5 wt.% WO 3+ 0.04 ~ 0.4wt.%LiNbO 3; Wherein, 0.025≤x≤0.06 mol, 0.025≤m≤0.06 mol, 0.88≤y≤0.95 mol, x+m+y=1.
CN201310349028.1A 2013-08-13 2013-08-13 Piezoceramic material used for low and medium frequency narrow band ceramic filters Expired - Fee Related CN103435345B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4210546A (en) * 1974-10-09 1980-07-01 Matsushita Electric Industrial Co., Ltd. Piezoelectric ceramic compositions
CN101365829A (en) * 2005-11-04 2009-02-11 赛若朴有限公司 Piezoeletric single crystal and method of production of same, piezoelectric element, and dielectric element
CN101456732A (en) * 2008-12-31 2009-06-17 中国科学院上海硅酸盐研究所 High temperature and high sensitivity piezoelectric ceramic material and preparation method thereof
CN101712548A (en) * 2009-09-30 2010-05-26 广州市番禺奥迪威电子有限公司 High efficiency piezoelectric ceramic material with low sintering temperature and preparation technology thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4210546A (en) * 1974-10-09 1980-07-01 Matsushita Electric Industrial Co., Ltd. Piezoelectric ceramic compositions
CN101365829A (en) * 2005-11-04 2009-02-11 赛若朴有限公司 Piezoeletric single crystal and method of production of same, piezoelectric element, and dielectric element
CN101456732A (en) * 2008-12-31 2009-06-17 中国科学院上海硅酸盐研究所 High temperature and high sensitivity piezoelectric ceramic material and preparation method thereof
CN101712548A (en) * 2009-09-30 2010-05-26 广州市番禺奥迪威电子有限公司 High efficiency piezoelectric ceramic material with low sintering temperature and preparation technology thereof

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