CN103435345B - Piezoceramic material used for low and medium frequency narrow band ceramic filters - Google Patents
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- 239000000919 ceramic Substances 0.000 title claims abstract description 59
- 239000000463 material Substances 0.000 title description 7
- 239000000203 mixture Substances 0.000 claims abstract description 13
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims abstract description 12
- 230000032683 aging Effects 0.000 claims abstract description 7
- 230000008878 coupling Effects 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims abstract description 5
- 238000005859 coupling reaction Methods 0.000 claims abstract description 5
- 239000002994 raw material Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 238000003746 solid phase reaction Methods 0.000 claims description 6
- 238000010671 solid-state reaction Methods 0.000 claims description 6
- 239000013064 chemical raw material Substances 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 238000010532 solid phase synthesis reaction Methods 0.000 claims description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 3
- 239000007769 metal material Substances 0.000 abstract description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 229910002328 LaMnO3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Abstract
本发明涉及无机非金属材料技术领域,特指一种中低频窄带陶瓷滤波器用压电陶瓷材料。所述压电陶瓷的组成为:(xPbNb2O6-mBiCoO3-y(Pb0.85Sr0.1Ba0.05)(Zr0.50Ti0.50)O3)+0.01~0.6wt.%LaMnO3+0.03~0.8wt.%WO3+0.01~0.6wt.%LiNbO3;其中,0.01≤x≤0.1mol,0.01≤m≤0.1mol,0.8≤y≤0.98mol,x+m+y=1。所制备的压电陶瓷的介电常数约为1500左右,机械品质因素为4200左右,径向机电耦合系数为0.20左右,谐振频率温度系数小于0.01%(-55~+85℃),谐振频率时间稳定性好小于0.005%(老化200小时),介质损耗小于0.03%;使用过程中性能稳定性好,安全性高。The invention relates to the technical field of inorganic non-metallic materials, in particular to a piezoelectric ceramic material for a medium-low frequency narrow-band ceramic filter. The composition of the piezoelectric ceramic is: (xPbNb 2 O 6 -mBiCoO 3 -y(Pb 0.85 Sr 0.1 Ba 0.05 )(Zr 0.50 Ti 0.50 )O 3 )+0.01~0.6wt.%LaMnO 3 +0.03~0.8wt .%WO 3 +0.01~0.6wt.%LiNbO 3 ; where, 0.01≤x≤0.1mol, 0.01≤m≤0.1mol, 0.8≤y≤0.98mol, x+m+y=1. The dielectric constant of the prepared piezoelectric ceramics is about 1500, the mechanical quality factor is about 4200, the radial electromechanical coupling coefficient is about 0.20, the resonant frequency temperature coefficient is less than 0.01% (-55~+85°C), and the resonant frequency time The stability is less than 0.005% (aging for 200 hours), and the dielectric loss is less than 0.03%. The performance is stable and safe during use.
Description
技术领域 technical field
本发明涉及无机非金属材料技术领域,特指一种中低频窄带陶瓷滤波器用压电陶瓷材料,它采用常规的固相法陶瓷的制备方法,利用普通化学原料,制备得到高稳定高性能压电陶瓷,该压电陶瓷适合于制备中低频窄带陶瓷滤波器。 The invention relates to the technical field of inorganic non-metallic materials, in particular to a piezoelectric ceramic material for medium and low-frequency narrow-band ceramic filters, which adopts the conventional solid-phase ceramic preparation method and common chemical raw materials to prepare high-stable and high-performance piezoelectric materials. Ceramics, the piezoelectric ceramics are suitable for preparing medium and low frequency narrow-band ceramic filters. ``
技术背景 technical background
压电陶瓷具有优良的压电效应,是功能陶瓷中应用非常广泛的一类,如传感器、换能器、滤波器等,在国民经济和国防工业中发挥着重要的作用,由于无铅压电陶瓷的压电性能与锆钛酸铅基压电陶瓷的压电性能相差很大,目前,压电陶瓷的应用主要是锆钛酸铅基及其三元和四元系压电陶瓷;目前,制作中低频窄带陶瓷滤波器等器件主要是锆钛酸铅基压电陶瓷,但是其温度稳定性和时间稳定性较差,随着温度和时间的变化,容易产生谐振频率的较大漂移,相对带宽的较大的变化,机械品质因素不够高,很难满足中低频窄带陶瓷滤波器的要求;为了改进压电陶瓷材料的性能,常采用两种途径:一是通过在基体材料中加入第三元或第四元以形成新材料来达到改性的目的;二是根据不同掺杂离子对材料性能的影响不同,对材料进行掺杂改性;本发明得到中低频窄带陶瓷滤波器等器件用高温度稳定高性能的铌酸铅钴酸铋锆钛酸铅四元系压电陶瓷,一般情况下,锆钛酸铅压电陶瓷的烧结温度在1260℃~1280℃,本发明的压电陶瓷的烧结温度为1050~1080℃,这样大大的降低能耗,节约成本,同时能抑制氧化铅的挥发。 Piezoelectric ceramics have excellent piezoelectric effects and are widely used in functional ceramics, such as sensors, transducers, filters, etc., and play an important role in the national economy and defense industry. Due to the lead-free piezoelectric The piezoelectric properties of ceramics are very different from those of lead zirconate titanate-based piezoelectric ceramics. At present, the application of piezoelectric ceramics is mainly lead zirconate titanate-based piezoelectric ceramics and their ternary and quaternary piezoelectric ceramics; at present, Lead zirconate titanate-based piezoelectric ceramics are mainly used to make low- and medium-frequency narrow-band ceramic filters, but their temperature stability and time stability are poor. Larger changes in bandwidth, the mechanical quality factor is not high enough, it is difficult to meet the requirements of low-frequency narrow-band ceramic filters; in order to improve the performance of piezoelectric ceramic materials, two ways are often used: one is by adding a third The second is to modify the material according to the different influences of different doping ions on the performance of the material; the present invention obtains a medium-low frequency narrow-band ceramic filter and other devices. High-temperature stable and high-performance lead niobate cobaltate bismuth zirconate titanate quaternary piezoelectric ceramics. Generally, the sintering temperature of lead zirconate titanate piezoelectric ceramics is 1260 ° C ~ 1280 ° C. The piezoelectric ceramics of the present invention The sintering temperature is 1050~1080℃, which greatly reduces energy consumption, saves costs, and can inhibit the volatilization of lead oxide. the
发明内容 Contents of the invention
本发明的目的是这样来实现的: The purpose of the present invention is achieved like this:
一种中低频窄带陶瓷滤波器压电陶瓷,其配方为:(xPbNb2O6-mBiCoO3-y(Pb0.85Sr0.1Ba0.05)(Zr0.50Ti0.50)O3)+0.01~0.6 wt.% LaMnO3 +0.03~0.8 wt.% WO3+0.01~0.6wt.%LiNbO3;其中,0.01≤x≤0.1 mol, 0.01≤m≤0.1 mol, 0.8≤y≤0.98 mol, x+m+y=1。其中PbNb2O6、BiCoO3、(Pb0.85Sr0.1Ba0.05)(Zr0.50Ti0.50)O3、LaMnO3、 LiNbO3分别是采用常规的化学原料以固相法合成。 A medium-low frequency narrow-band ceramic filter piezoelectric ceramic, the formula of which is: (xPbNb 2 O 6 -mBiCoO 3 -y(Pb 0.85 Sr 0.1 Ba 0.05 )(Zr 0.50 Ti 0.50 )O 3 )+0.01~0.6 wt.% LaMnO 3 +0.03~0.8 wt.% WO 3 +0.01~0.6wt.%LiNbO 3 ; where, 0.01≤x≤0.1 mol, 0.01≤m≤0.1 mol, 0.8≤y≤0.98 mol, x+m+y= 1. Among them, PbNb 2 O 6 , BiCoO 3 , (Pb 0.85 Sr 0.1 Ba 0.05 )(Zr 0.50 Ti 0.50 )O 3 , LaMnO 3 , and LiNbO 3 were respectively synthesized by using conventional chemical raw materials in a solid phase method.
LaMnO3、WO3、LiNbO3的加入量是基体(xPbNb2O6-mBiCoO3-y(Pb0.85Sr0.1Ba0.05)(Zr0.50Ti0.50)O3)质量的0.01~0.6 %、0.03~0.8 %和0.01~0.6%。 The amount of LaMnO 3 , WO 3 , LiNbO 3 added is 0.01-0.6 %, 0.03-0.8 % and 0.01~0.6%.
所述压电陶瓷的介电常数为1483-1512,机械品质因素为4189-4230,径向机电耦合系数为0.18-0.22,谐振频率温度系数在-55~+85℃温度范围内为0.004%-0.008%,老化200小时后的谐振频率时间稳定性tfr为0.0022%-0.0041%,介质损耗为0.018%-0.028%。 The dielectric constant of the piezoelectric ceramic is 1483-1512, the mechanical quality factor is 4189-4230, the radial electromechanical coupling coefficient is 0.18-0.22, and the temperature coefficient of resonance frequency is 0.004%- 0.008%, the resonant frequency time stability t fr after aging for 200 hours is 0.0022%-0.0041%, and the dielectric loss is 0.018%-0.028%.
本发明的压电陶瓷所用的PbNb2O6的制备过程包括:将常规的化学原料Pb3O4 The preparation process of PbNb 2 O 6 used in the piezoelectric ceramics of the present invention comprises: the conventional chemical raw material Pb 3 O 4
和Nb2O5按1/3:1摩尔比配料,研磨混合均匀后放入氧化铝坩埚内于900℃保温 Mix with Nb 2 O 5 at a molar ratio of 1/3:1, grind and mix evenly, put it in an alumina crucible and keep it warm at 900°C
120分钟,固相反应合成PbNb2O6,冷却后研磨过200目筛,备用。 After 120 minutes, PbNb 2 O 6 was synthesized by solid state reaction, cooled and ground through a 200-mesh sieve for later use.
本发明的压电陶瓷所用BiCoO3的制备过程包括:将常规的化学原料Bi2O3和 The preparation process of BiCoO3 used in piezoelectric ceramics of the present invention comprises : conventional chemical raw materials Bi2O3 and
Co2O3按1/2:1/2摩尔比配料,研磨混合均匀后放入氧化铝坩埚内于900℃~950℃ Co 2 O 3 is prepared according to the molar ratio of 1/2:1/2, ground and mixed evenly, then put into an alumina crucible at 900°C~950°C
保温120分钟,固相反应合成BiCoO3,冷却后研磨过200目筛,备用。 Keep it warm for 120 minutes, synthesize BiCoO 3 by solid state reaction, grind it through a 200-mesh sieve after cooling, and set aside.
本发明的压电陶瓷所用LaMnO3的制备过程包括:将常规的化学原料La2O3 The preparation process of LaMnO3 used in piezoelectric ceramics of the present invention comprises: conventional chemical raw material La2O3
和MnO2按1/2: 1摩尔比配料,研磨混合均匀后放入氧化铝坩埚内于900℃~950℃ Mix with MnO 2 at a molar ratio of 1/2:1, grind and mix evenly, put it in an alumina crucible at 900°C~950°C
保温120分钟,固相反应合成LaMnO3,冷却后研磨过200目筛,备用。 Keep it warm for 120 minutes, synthesize LaMnO 3 by solid state reaction, grind it through a 200-mesh sieve after cooling, and set aside.
本发明采用常规的固相法陶瓷制备工艺,即首先按配方配料将配合料球磨粉碎 The present invention adopts the conventional solid-phase method ceramic preparation technology, that is, firstly, the batch material is ball milled and pulverized according to the formula ingredients.
混合,进行烘干后,加入粘合剂造粒,再压制成生坯片,然后在空气中进行排胶 After mixing and drying, add binder to granulate, then press into green sheet, and then debinding in air
和烧结,经保温并自然冷却后,获得铌酸铅钴酸铋锆钛酸铅四元系压电陶瓷,在 and sintering, after heat preservation and natural cooling, lead niobate cobaltate bismuth zirconate titanate lead quaternary piezoelectric ceramics are obtained.
陶瓷上被电极,然后极化,老化,测性能。 Ceramics are electroded, then polarized, aged, and tested for performance.
上述中低频窄带陶瓷滤波器用压电陶瓷的配方最好采用下列二种方案: The formulation of piezoelectric ceramics for the above-mentioned medium and low-frequency narrow-band ceramic filters is best to adopt the following two schemes:
(xPbNb2O6-mBiCoO3-y(Pb0.85Sr0.1Ba0.05)(Zr0.50Ti0.50)O3)+0.03~0.4wt.% LaMnO3 +0.04~0.6 wt.% WO3+0.03~0.5wt.%LiNbO3 ;其中,0.02≤x≤0.08 mol, 0.02≤m≤0.08 mol, 0.84≤y≤0.96 mol, x+m+y=1; (xPbNb 2 O 6 -mBiCoO 3 -y(Pb 0.85 Sr 0.1 Ba 0.05 )(Zr 0.50 Ti 0.50 )O 3 )+0.03~0.4wt.% LaMnO 3 +0.04~0.6 wt.% WO 3 +0.03~0.5wt .%LiNbO 3 ; where, 0.02≤x≤0.08 mol, 0.02≤m≤0.08 mol, 0.84≤y≤0.96 mol, x+m+y=1;
(xPbNb2O6-mBiCoO3-y(Pb0.85Sr0.1Ba0.05)(Zr0.50Ti0.50)O3 ) +0.04~0.3 wt.% LaMnO3 +0.05~0.5 wt.% WO3+0.04~0.4wt.%LiNbO3;其中, 0.025≤x≤0.06 mol, 0.025≤m≤0.06 mol, 0.88≤y≤0.95 mol,x+m+y =1。 (xPbNb 2 O 6 -mBiCoO 3 -y(Pb 0.85 Sr 0.1 Ba 0.05 )(Zr 0.50 Ti 0.50 )O 3 ) +0.04~0.3 wt.% LaMnO 3 +0.05~0.5 wt.% WO 3 +0.04~0.4wt .%LiNbO 3 ; where, 0.025≤x≤0.06 mol, 0.025≤m≤0.06 mol, 0.88≤y≤0.95 mol, x+m+y=1.
本发明与现有技术相比,具有如下优点: Compared with the prior art, the present invention has the following advantages:
1、所制备的压电陶瓷的介电常数约为1500左右,机械品质因素(Qm)为4200左右,径向机电耦合系数(Kp)为0.20左右,谐振频率温度系数(τfr)小于0.01%(-55~+85℃), 谐振频率时间稳定性好(tfr)小于0.005%(老化200小时),介质损耗(tanδ)小于0.03%;使用过程中性能稳定性好,安全性高。 1. The dielectric constant of the prepared piezoelectric ceramics is about 1500, the mechanical quality factor (Q m ) is about 4200, the radial electromechanical coupling coefficient (K p ) is about 0.20, and the temperature coefficient of resonance frequency (τ fr ) is less than 0.01% (-55~+85℃), good time stability of resonant frequency (t fr ) less than 0.005% (aging for 200 hours), dielectric loss (tanδ) less than 0.03%; good performance stability and high safety during use .
2、本专利的压电陶瓷性能很容易调节,以满足系列中低频窄带陶瓷滤波器等器件的要求。 2. The performance of the piezoelectric ceramics of this patent can be easily adjusted to meet the requirements of a series of low-frequency narrow-band ceramic filters and other devices. the
3、本陶瓷采用常规的固相法压电陶瓷制备工艺即可进行制备,所使用的原料是常规的化学原料,制作成本低。本发明的压电陶瓷的烧结温度为1050~1080℃,这样大大的降低能耗,节约成本,同时能抑制氧化铅的挥发。 3. The ceramics can be prepared by the conventional solid-phase piezoelectric ceramics preparation process, and the raw materials used are conventional chemical raw materials, and the production cost is low. The sintering temperature of the piezoelectric ceramic of the present invention is 1050-1080° C., which greatly reduces energy consumption, saves cost, and can suppress the volatilization of lead oxide at the same time. the
具体实施方式 Detailed ways
现在结合实施例对本发明作进一步的描述,表1给出本发明的实施例共4个试样的配方。 Now in conjunction with embodiment the present invention is described further, and table 1 provides the formula of totally 4 samples of the embodiment of the present invention. the
本发明的实施例共4个试样的配方的主要原料采用常规的化学原料并预先合成PbNb2O6、BiCoO3、(Pb0.85Sr0.1Ba0.05)(Zr0.50Ti0.50)O3、LaMnO3、LiNbO3,按上述配方配料,将配好的料用蒸馏水或去离子水采用行星球磨机球磨混合,料:球:水=1:3:(0.6~1.0),球磨4~8小时后,烘干得干粉料,在干粉料中加入占其重量5~8%的浓度为10%(重量百分比)的聚乙烯醇溶液,进行造粒,混研后过40目筛,再在20~30Mpa压力下进行干压成生坯片,然后在温度为750~850℃下保温1~4小时进行排胶,升温速率为50~100℃/小时;然后将样品置于氧化铝坩埚中,密闭烧结,烧结温度为1050~1080℃,保温时间为1~2小时,即得到陶瓷片;陶瓷片经研磨抛光后两面被覆银电极,并在硅油中120℃左右极化,极化电场为3000~5000伏/mm,极化时间为15~20分钟;极化完毕,测试谐振频率,经过老化200小时测试谐振频率,计算谐振频率时间稳定性;极化完毕,经过老化48小时,测试其他性能。 The main raw materials of the formulations of the 4 samples in the embodiment of the present invention are conventional chemical raw materials and pre-synthesized PbNb 2 O 6 , BiCoO 3 , (Pb 0.85 Sr 0.1 Ba 0.05 )(Zr 0.50 Ti 0.50 )O 3 , LaMnO 3 , LiNbO 3 , according to the above formula, mix the prepared materials with distilled water or deionized water and use a planetary ball mill to mix them. Material: ball: water = 1:3: (0.6~1.0), after ball milling for 4~8 hours, bake Dried to obtain dry powder, add 5-8% of its weight to the dry powder and add a polyvinyl alcohol solution with a concentration of 10% (percentage by weight) to granulate, pass through a 40-mesh sieve after mixing, and then grind it under a pressure of 20-30Mpa. Dry pressing into a green sheet at a temperature of 750-850°C for 1-4 hours for debinding, the heating rate is 50-100°C/hour; then the sample is placed in an alumina crucible, sealed and sintered, The sintering temperature is 1050~1080°C, and the holding time is 1~2 hours, and the ceramic sheet is obtained; the ceramic sheet is ground and polished, covered with silver electrodes on both sides, and polarized in silicone oil at about 120°C, and the polarization electric field is 3000~5000 volts /mm, the polarization time is 15~20 minutes; after the polarization is completed, test the resonant frequency, test the resonant frequency after 200 hours of aging, and calculate the time stability of the resonant frequency; after the polarization is completed, after 48 hours of aging, test other properties.
上述各配方试样的性能列于表2,从表2可以看出所制备的压电陶瓷的介电常数(ε)约为1500左右,机械品质因素(Qm)为4200左右,径向机电耦合系数(Kp)为0.20左右,谐振频率温度系数(τfr)小于0.01%(-55~+85℃), 谐振频率时间稳定性好(tfr)小于0.005%(老化200小时), 介质损耗(tanδ)小于0.03%。 The properties of the above formula samples are listed in Table 2. It can be seen from Table 2 that the dielectric constant (ε) of the prepared piezoelectric ceramics is about 1500, the mechanical quality factor (Q m ) is about 4200, and the radial electromechanical coupling Coefficient (K p ) is about 0.20, resonant frequency temperature coefficient (τ fr ) is less than 0.01% (-55~+85°C), good time stability of resonant frequency (t fr ) is less than 0.005% (aging for 200 hours), dielectric loss (tan δ) is less than 0.03%.
表1 本发明的实施例共4个试样的配方 Table 1 The formula of totally 4 samples of the embodiment of the present invention
表2本发明的实施例共4个配方试样的性能 The performance of totally 4 formula samples of the embodiment of the present invention of table 2
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。 The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range. the
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CN101456732A (en) * | 2008-12-31 | 2009-06-17 | 中国科学院上海硅酸盐研究所 | High temperature and high sensitivity piezoelectric ceramic material and preparation method thereof |
CN101712548A (en) * | 2009-09-30 | 2010-05-26 | 广州市番禺奥迪威电子有限公司 | High efficiency piezoelectric ceramic material with low sintering temperature and preparation technology thereof |
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CN101365829A (en) * | 2005-11-04 | 2009-02-11 | 赛若朴有限公司 | Piezoeletric single crystal and method of production of same, piezoelectric element, and dielectric element |
CN101456732A (en) * | 2008-12-31 | 2009-06-17 | 中国科学院上海硅酸盐研究所 | High temperature and high sensitivity piezoelectric ceramic material and preparation method thereof |
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