CN103426980B - The manufacture craft of patterned sapphire substrate - Google Patents
The manufacture craft of patterned sapphire substrate Download PDFInfo
- Publication number
- CN103426980B CN103426980B CN201210158040.XA CN201210158040A CN103426980B CN 103426980 B CN103426980 B CN 103426980B CN 201210158040 A CN201210158040 A CN 201210158040A CN 103426980 B CN103426980 B CN 103426980B
- Authority
- CN
- China
- Prior art keywords
- substrate
- exposure
- etching
- manufacture craft
- sapphire substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of preparation method of graphical sensing coupling plasma-based Sapphire Substrate.The manufacture craft comprises the following steps：Treat Sapphire Substrate substrate and carry out cleaning treatment；Sapphire is directed at installation with the substrate, and sets spin coating to apply Fabric on substrate by setpoint distance in the front；1.3 carry out projection exposure according to default conditions of exposure；Development treatment is carried out to the substrate after exposure；Dry etching processing is carried out to the substrate after development, the mask using the photoresist of substrate surface as etching；After the temperature and vacuum and the control temperature of cooling cycle machine of setting sensing coupling plasma etch chamber, the substrate after dry etching is handled is put on the slide glass base station in etch chamber；It is passed through sensing coupling plasma etch gas to perform etching substrate, by exporting frequency source and refraction frequency source Power Control etching speed and quality；The slide glass base station is cooled down by the cooling cycle machine simultaneously.The preparation method that we are coupled plasma-based Sapphire Substrate with sensing, will greatly improve productivity ratio, figure uniformity, high yield rate and process stabilizing.
Description
Technical field
It is blue more specifically to a kind of graphical sensing coupling plasma-based the present invention relates to Sapphire Substrate production field
The preparation method of jewel substrate.
Background technology
LED substrate material uses sapphire at present, is because Sapphire Substrate has technology maturation, high mechanical strength, device
The features such as part is stable.Sapphire Substrate for GaN growth is mostly c-plane sapphire substrate, and this is primarily due to sapphire crystal along C
Technical maturity, advantage of lower cost, the physical and chemical performance of axle growth are stable, and the technology maturation that epitaxy is carried out in C faces is stable.But in C
The GaN film grown in surface sapphire substrate is grown along the i.e. c-axis direction of its polar axis, and film has spontaneous polarization combined pressure
Electric polarization effect, causes inside film（Active layer SQW）Powerful built in field is produced, greatly reduces GaN film
Luminous efficiency.In a manner of growing up or etch, the micro-structural figure of nanoscale ad hoc rules is designed and produced out on a sapphire substrate
Case uses control LED output light form, and can reduce dislocation defects of the growth on a sapphire substrate between GaN simultaneously, changes
Kind epitaxy quality, and most sub- efficiency inside LED is lifted, increase light extraction efficiency.
The underlay pattern made now is varied, but its complex steps, needs to make certain figure with light shield in advance, and
Productivity ratio is low, figure uniformity is low, yield rate is low and technique is unstable.
The content of the invention
The invention aims to provide it is a kind of using it is non-contact, graphical sapphire substrate realized by graphic projection
Etching, sensing coupling plasma-based is used to realize the etching of graphical sapphire substrate for mask, productivity ratio is high, and light extraction efficiency is high and steady
The manufacture craft of fixed patterned sapphire substrate.
What the present invention was realized in：Comprise the following steps
1.1, which treat Sapphire Substrate substrate, carries out cleaning treatment；
Sapphire is directed at installation with the substrate by 1.2, and sets spin coating to apply Fabric in base by setpoint distance in the front
On plate；
1.3 carry out projection exposure according to default conditions of exposure；
Substrate after 1.4 pairs of exposures carries out development treatment；
Substrate after 1.5 pairs of developments carries out dry etching processing, the mask using the photoresist of substrate surface as etching；
, will after the temperature and vacuum and the control temperature of cooling cycle machine of 1.6 setting sensing coupling plasma etch chambers
Substrate after dry etching processing is put on the slide glass base station in etch chamber；
1.7 are passed through sensing coupling plasma etch gas performs etching to substrate, by exporting frequency source and folding RF source power
Control etching speed and quality；The slide glass base station is cooled down by the cooling cycle machine simultaneously；
The step 1.2 is that sapphire is aligned into installation with the substrate, and sets the mask by lens control group
Projection ratio in the graphic projection to the substrate of version；
The step 1.3 is to carry out subregion projection exposure in the projection ratio according to default conditions of exposure；
The step 1.6 is the control of the temperature and vacuum, the temperature of radome and cooling cycle machine of setting etch chamber
After temperature processed, dry etching is handled after substrate be put on the slide glass base station with multiple film traps in etch chamber；
The step 1.7 is also passed through helium including each film trap and the substrate is cooled down；
Also include step between the step 1.1 and 1.2：Dry etching processing is carried out to the substrate after cleaning；
Also include step 1.33 between the step 1.3 and 1.4：Dry etching processing is carried out to the substrate after exposure.
Default conditions of exposure in the step 1.3 includes time for exposure, exposure light intensity, exposure area, camera lens focal plane
And projection ratio；Wherein the time for exposure is 210-250msec, and exposure light intensity is 350-450mw/cm2, exposure area 3mm*
3mm-4mm*4mm, projection ratio are 5:1.
The step 1.3 include 1.3.1 according to default conditions of exposure in the projection ratio the substrate exposure
Projection exposure is carried out on region；1.3.2 the substrate is moved by step printing equipment with change it is described thoroughly
Exposure area, 1.33 are repeated until substrate Zone Full exposure is completed.
Substrate after developing described in the step 1.5 toasts the 90-100 seconds between 90-100 degree.
The temperature of etch chamber described in the step 1.6 is 40-50 degree, and the vacuum of the etch chamber is less than 8*10-5
Pa.
The step 1.7 includes：1.7.1 the true temp of the quarter chamber, is made to be less than 8*10-6torr；1.9.2, pass through quarter
It is 5.5mtorr to lose gas to the etching cavity pressure；1.7.3 it is, 1200- by the output frequency source power setting in the 8-12 seconds
1500 watts；1.7.4 it is, 20-30 watts by the reflection frequency source power setting in the 8-12 seconds；1.7.5 the etching cavity pressure, is kept
The 320-450 seconds are etched for 5.5m pas.
The etching gas are boron chloride in this process, and it is 200-215sccm to be passed through flow；What the film trap was passed through
Helium pressure is 5torr.
Also include step after the step 1.7：After 1.8 remove the etching using the mixture of sulfuric acid and hydrogen peroxide
The photoetching glue residue of substrate surface, the substrate after the etching is carried out using acetone, ethanol and deionized water successively clear
Wash.
The invention has the advantages that：
1. we with sensing be coupled plasma-based Sapphire Substrate preparation method, will greatly improve productivity ratio, figure uniformity,
High yield rate and process stabilizing.
2. light shield with substrate without directly contacting during photoetching, the damage of light shield caused by avoiding photoetching adhesive sheet, etching
Shi Wuxu is directly done mask, can made fine with photoresist with being deposited one layer as the hard mask of silica or chromium, nickel etc
Litho pattern, while solve the photoresist carbonization occurred in etching process, the change of figure high temperature using sensing coupling plasma etch
The problems such as shape.
3. light directly projects light shield and reaches lens control group, litho pattern throwing in proportion is can be achieved with by lens control group
Shadow shifts, and figure is accomplished minimum as far as possible, and exposure accuracy fully meets the requirement of sub-micron rank, process repeatability
And stability is improved, a variety of types of cooling ensure that photoresist is not in photoresist carbonization, figure in etching process
The problems such as shape high temperature deformation.Substrate after cleaning, which carries out dry etching processing, can effectively remove solvent contained by photoresist, strengthen photoetching
The adhesion of glue, discharge the stress in photoresist film；Substrate after exposure carries out dry etching processing to reduce standing wave water wave effect.In advance
If conditions of exposure can realize more preferable lithographic results.Step printing make it that regional exposure is more accurate.It is hard after development
Baking evaporating completely falls solvent inside photoresist, protects the ability of lower surface to improve photoresist in etching and further increases
Adhesiveness between photoresist and substrate surface by force.The setting of radome prevents from etching product deposition；The temperature of cooling cycle machine
Degree control prevents because caused by high temperature the problem of lithography carbonization, substrate figure high temperature deformation well.Export frequency source and anti-
The cooperation of radio frequency source can be good at control and etch the figure come.The gaseous state that the boron chloride of liquid becomes active is made in advance
Etching effect is more preferable, film trap is passed through helium and carries out cooling treatment, prevent because lithography carbonization, substrate figure caused by high temperature
The problem of high temperature deformation.The mixture of sulfuric acid and hydrogen peroxide can remove photoetching glue residue well；Acetone, ethanol and go from
The cleaning of sub- water can go sulfuric acid and the residual of hydrogen peroxide well.
Brief description of the drawings
Fig. 1 is the flow chart of the first preferred embodiment of the manufacture craft of patterned sapphire substrate of the present invention；
Fig. 2 is the flow chart of the second preferred embodiment of the manufacture craft of patterned sapphire substrate of the present invention；
Fig. 3 is the flow chart of the third preferred embodiment of the manufacture craft of patterned sapphire substrate of the present invention；
Fig. 4 is the flow chart of the 4th preferred embodiment of the manufacture craft of patterned sapphire substrate of the present invention；
Fig. 5 is the flow chart of the 5th preferred embodiment of the manufacture craft of patterned sapphire substrate of the present invention；
Fig. 6 is the flow chart of the 6th preferred embodiment of the manufacture craft of patterned sapphire substrate of the present invention；
Fig. 7 is the configuration of surface figure before etching after patterned sapphire substrate photoetching of the present invention；
Fig. 8 is the configuration of surface figure after patterned sapphire substrate etching of the present invention.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only to the present invention, and do not have to
It is of the invention in limiting.
In the flow chart of the first preferred embodiment of the manufacture craft of the patterned sapphire of the invention shown in Fig. 1；
The manufacture craft of described graphical sapphire substrate starts from step 100, then in next step 101, to sapphire substrate
Carry out cleaning treatment；Then in next step 102, sapphire substrate is directed at installation with the substrate, and by the front substrate
Fabric is applied on substrate by setpoint distance spin coating；Then in next step 103, projection exposure is carried out according to default conditions of exposure；With
Next step 104 is arrived afterwards, and development treatment is carried out to the Sapphire Substrate after exposure；Then in next step 105, to the substrate after development
Dry etching processing is carried out, the mask using the photoresist of substrate surface as etching；Then in next step 106, setting senses coupling electricity
After the temperature and vacuum and the control temperature of cooling cycle machine of starching etch chamber, the substrate after dry etching is handled is put into etch chamber
Slide glass base station on；Then in next step 107, it is passed through sensing coupling plasma etch gas and substrate is performed etching, pass through output
Frequency source power and reflection frequency source Power Control etching speed and quality；Simultaneously by the cooling cycle machine to the slide glass base station
Cooled down；Final method ends at step 110.Using the preparation method photoengraving light of the graphical sapphire substrate of the present invention
Cover with substrate without directly contacting, the damage of light shield caused by avoiding photoetching adhesive sheet, need not use one layer of picture of evaporation during etching
The hard mask of silica or chromium, nickel etc, directly does mask, can make fine litho pattern, use simultaneously with photoresist
Sensing coupling plasma etch solves the problems such as photoresist carbonization occurred in etching process, figure high temperature deformation.
In the flow chart of the second preferred embodiment of the manufacture craft of the patterned sapphire of the invention shown in Fig. 2；
The preparation method of described graphical sapphire substrate starts from step 200, then in next step 201, treats sapphire lining
Bottom carries out cleaning treatment；Then in next step 202, sapphire substrate is directed at installation with the substrate, and by the front base
Plate applies Fabric on substrate by setpoint distance spin coating；Then in next step 203, according to default conditions of exposure using light shield by described
Projection ratio carries out subregion projection exposure；Then in next step 204, development treatment is carried out to the Sapphire Substrate after exposure；With
Next step 205 is arrived afterwards, and dry etching processing is carried out to the substrate after development, the mask using the photoresist of substrate surface as etching；With
Next step 206 is arrived afterwards, will after setting sensing is coupled the temperature and vacuum and the control temperature of cooling cycle machine of plasma etch chamber
Substrate after dry etching processing is put into etch chamber on the slide glass base station with multiple film traps；Then in next step 207, sensing is passed through
Coupling plasma etch gas performs etching to substrate, by exporting frequency source power and reflection frequency source Power Control etching speed and matter
Amount；The slide glass base station is cooled down by the cooling cycle machine simultaneously, each film trap is passed through helium and the substrate is entered
Row cooling；Final method ends at step 210.During currently used making patterned substrate, lithographic exposure systems are most
Contact photoetching machine is used, hesitation is the photoetching transfer of equal proportion, causes figure line width not high, more than 2 μm of dimension of picture,
Resolution ratio is low, productivity ratio is low, figure uniformity is low causes yield to decline.Using this method carry out photoetching when light shield without and substrate
Directly contact, the direct transmissive mask plate of light reaches lens control group, and lens control group is arranged on substrate and light by fixing device
Figure is accomplished minimum as far as possible, it also avoid simultaneously by the distance between cover to realize litho pattern projection transfer in proportion
The damage of light shield caused by photoetching adhesive sheet, and exposure accuracy fully meet sub-micron rank requirement, process repeatability with
And stability is improved.Etching technics originally be deposited before photoetching on photolithographic substrates are treated one layer as silica or
The hard mask of chromium, nickel etc, photoresist is then coated on hard mask and carries out photoetching treatment, processing removal of removing photoresist is carried out after photoetching
Photoresist is then performing etching processing to expose hard mask.And this method need not use one layer of evaporation as silica or chromium, nickel
Etc hard mask, after photoetching without remove photoresist processing, directly do light shield with photoresist, fine etching figure can be made
Shape, while solve the problems such as photoresist carbonization occurred in etching process, figure high temperature deformation using Cryo-etching.Through we
The substrate for the cylindric figure that method is made, through epitaxial growth, chip manufacturing, chip brightness can be made to be improved largely, it is bright
Degree is improved in 60%-85%.The bag-like graphic design done is smaller, narrower gap, and chip brightness lifting is higher.
In the flow chart of the 3rd preferred embodiment of the manufacture craft of the patterned sapphire of the invention shown in Fig. 3；
The preparation method of described patterned sapphire substrate starts from step 300, then in next step 301, treats sapphire lining
Bottom carries out cleaning treatment；Then in next step 302, spin coating processing is carried out to the substrate after cleaning and is toasted；Then in next step
303, light shield is directed at installation with the substrate, and the graphic projection of the light shield is set to the substrate by lens control group
On projection ratio；；Then in next step 304, divided according to default conditions of exposure using light shield in the projection ratio
Area's projection exposure is to exposure；Then in next step 305, dry etching processing is carried out to the substrate after exposure；Next step 306 is then arrived,
Development treatment is carried out to the substrate after exposure；Then in next step 307, dry etching processing is carried out to the substrate after development, by substrate
Mask of the photoresist on surface as etching；Then in next step 308, setting senses the temperature and vacuum of coupling plasma etch chamber
After the control temperature of degree and cooling cycle machine, the substrate after dry etching is handled is put into sensation coupling plasma etch chamber with multiple
On the slide glass base station of film trap；Then in next step 309, it is passed through etching gas and substrate is performed etching, by exporting frequency source power
With reflection frequency source Power Control etching speed and quality；The slide glass base station is carried out by the cooling cycle machine simultaneously cold
But, each film trap is passed through helium and the substrate is cooled down；Final method ends at step 310.Substrate after spin coating is carried out
Dry etching processing can effectively remove contained solvent in photoresist, strengthen the adhesion of photoresist, discharge the stress in photoresist film；
Substrate after exposure carries out dry etching processing to reduce standing wave effect.
As the preferred embodiment of the manufacture craft of the patterned sapphire substrate of the present invention, wherein the step 1.3
In default conditions of exposure include the time for exposure, exposure light intensity, exposure area, camera lens focal plane and projection ratio.Wherein expose
It is 210-250msec between light time, exposure light intensity is 350-450mw/c ㎡, exposure area 3mm*3mm-4mm*4mm, projects ratio
Example is 5:1. this method sets time for exposure and exposure light intensity to protect before exposure using regional exposure in proportion
The effect of exposure is demonstrate,proved, the transfer between exposure area is realized by step printing device, while determined every time after transfer
Optimal camera lens focal plane and projection ratio are to ensure the effect of exposure.
In the flow of the 4th preferred embodiment of the manufacture craft of the patterned sapphire substrate of the invention shown in Fig. 4
Figure；The step 1.3 of the preparation method of described graphical sapphire substrate starts from step 400, then to next step 401, root
Projection exposure is carried out on the exposure area of the substrate in the projection ratio according to default conditions of exposure；Then in next step
402, the substrate is moved by step printing equipment to change the exposure area of the substrate, repeat step 401
Until substrate Zone Full exposure is completed；Final method ends at step 403.Due to the size of light shield and the quality of photoetching
Reason is controlled, can not once carry out the exposing operation of entire substrate, step printing make it that regional exposure is more accurate, right every time
Substrate will redefine the optimal camera lens focal plane of lens control group and projection ratio to ensure the effect of exposure after moving
Fruit.
As the preferred embodiment of the preparation method of the patterned sapphire substrate of the present invention, the step 1.5 is by institute
State the substrate after development and the 90-100 seconds are toasted between 90-110 degree.The temperature of etch chamber described in the step 1.6 is 40-50
Degree, the vacuum of the etch chamber are less than 8*10-5Pa.The hard baking evaporating completely after development is fallen in photoresist after development
The solvent in face, the ability of lower surface is protected to improve photoresist in etching and is further enhanced between photoresist and substrate surface
Adhesiveness.The setting of radome prevents from etching product deposition；The temperature control of cooling cycle machine prevents because high well
Caused by temperature the problem of lithography carbonization, substrate figure high temperature deformation.
In the flow of the 5th preferred embodiment of the manufacture craft of the patterned sapphire substrate of the invention shown in Fig. 5
Figure；The step 1.7 of the preparation method of described graphical sapphire substrate starts from step 500, makes the vacuum temperature of the quarter chamber
Degree is less than 8*10-6Pa；It is 5.5m pas by etching gas to the etching cavity pressure then in next step 501；Then arrive next
Walk in 502, the 8-12 seconds and export frequency source power setting by described as 1200-1500 watts；Then arriving will in 503, the 8-12 seconds in next step
The reflection frequency source power setting is 20-30 watts；Then in next step 504, it is 5.5m pas to keep the etching cavity pressure, etching
The 320-450 seconds；Next step 505 is then arrived, takes out the substrate after etching after etching.Final this method ends at step
506.This method has reached control etching figure using the quantity and etching speed of output frequency source and reflection frequency source control etching gas
The effect of shape.
As the preferred embodiment of the preparation method of the patterned sapphire substrate of the present invention, the etching gas are trichlorine
Change boron, it is 200-215sccm to be passed through flow.The helium pressure that the film trap is passed through is 5 pas.The boron chloride of liquid is become in advance
Make it that etching effect is more preferable for active gaseous state.Film trap is passed through helium and carries out cooling treatment, prevents because photoetching caused by high temperature
Glue is carbonized；The problem of substrate figure high temperature deformation.
In the flow of the 6th preferred embodiment of the manufacture craft of the patterned sapphire substrate of the invention shown in Fig. 6
Figure；The step of preparation method of described graphical sapphire substrate, starts from step 600, then in next step 601, treats indigo plant
Jewel underlay substrate carries out cleaning treatment；Then in next step 602, spin coating baking processing is carried out to the substrate after cleaning；Then
To in next step 603, light shield is directed at installation with the substrate, and arrive by the graphic projection of the lens control group setting light shield
Projection ratio on the underlay substrate；Then in next step 604, carried out according to default conditions of exposure in the projection ratio
Subregion projection exposure；Then in next step 605, dry etching processing is carried out to the substrate after exposure；Then in next step 606, to exposing
Substrate after light carries out development treatment；Then in next step 607, baking processing is carried out to the substrate after development, by substrate surface
Photoresist as etching mask；Next step 608 is then arrived, sets the temperature and vacuum and cooling cycle machine of etch chamber
Control temperature after, the substrate after baking is handled is put into having on the slide glass base station of multiple film traps in etched cavity；Then arrive down
One step 609, is passed through etching gas and substrate is etched, by exporting frequency source power and reflection frequency source Power Control etching speed
And quality；The slide glass board is cooled down by the cooling cycle machine simultaneously, each film trap is passed through helium to the lining
Bottom is cooled down；Then in next step 610, the substrate surface after the etching is removed using the mixture of sulfuric acid and hydrogen peroxide
Photoetching glue residue；Then in next step 611, successively using acetone, ethanol and deionized water to the substrate after the etching
Cleaned；Final method ends at step 613.The mixture of sulfuric acid and hydrogen peroxide can remove photoetching glue residue well；
The cleaning of acetone, ethanol and deionized water can go sulfuric acid and the residual of hydrogen peroxide well.
The manufacture craft of the patterned sapphire substrate of the present invention need not use one layer of evaporation as silica or chromium, nickel etc
Hard mask, after photoetching without remove photoresist processing, directly do mask with photoresist, it is 1.6-2.4 μ that can make pattern diameter
Into the figure of composition, hemisphere is highly 0.85-1.15m for m hemispherical uniformly arrangement two.Because photoresist does mask, so needing
Solve the problems, such as to be exactly photoresist carbonization, the heat dissipation problem and the problems such as figure high temperature deformation occurred in etching process.Have
The cooling of helium gas cooling film trap and single cooling cycle machine to slide glass base station, during photoresist mask etch
High-temperature cooling, directly employ photoresist and be etched as mask, with the processing step of its simple and stable and it is cheap into
This, the stable submicron figure for processing periodic arrangement on a sapphire substrate.
Illustrate the making work of the sensing coupling plasma-based patterned sapphire substrate of the present invention below by specific implementation case
The implementation process of skill：
1. Sapphire Substrate is placed on automatic sol evenning machine, photoresist is dropped among substrate, and sol evenning machine is turned with 500rmp's
After the fast low speed rotation 10-15 seconds, then the rotating speed acceleration rotation with 3000rmp, photoresist is uniformly thrown away.Rubberization thickness is 3-
Between 3.5 microns.
2. Sapphire Substrate is placed on vacuum hot plate, between hot plate temperature is 70-95 DEG C, the 40-60 seconds are toasted；Remove light
Contained solvent in photoresist, strengthen the adhesiveness of photoresist；Discharge the stress in photoresist.
Cooled down 3. the Sapphire Substrate toasted is placed on coldplate before exposure.
4. substrate and mask plate are loaded into fixing device, there is individual reference mark in the work stage of litho machine, it is regarded as
Origin, mask plate and Sapphire Substrate are aligned with the reference mark respectively.
5. setting the stepping accuracy of exposure device, a fixed time for exposure is selected in the range of 210-250sec, so
Optimum lenses focal plane is determined with 0.18-0.45 μm of step footpath afterwards.
6. regulate the light intensity being evenly distributed so that（Largest light intensity-minimum intensity of light）/（Largest light intensity+minimum intensity of light）It is small
In 2%, so that it is determined that optimum exposure light intensity.
7. the suitable exposure area of selection, is exposed in fixed projection ratio.Such as exposure light intensity is set as 350-
450mw/c ㎡, time for exposure are set as 210-250msec, and exposure area is each time（3mm—4mm）*（3mm—4mm）Gu
Projection pattern ratio is determined for 5：1,11-15 regions are projected in each Sapphire Substrate.
8. the substrate after exposure is placed in hot plate or baking oven and toasted, hot plate or oven temperature set 100-120 DEG C it
Between, baking time 40 ~ 90 seconds, reduce standing wave effect.
9. the substrate after baking is placed in automatic processing machine to photoresist developing.Nozzles spray developer solution is in substrate table
Face, develop the 10-30 seconds, while substrate after development fully, with deionized water rinsing substrate and is revolved with 100-500rmp low speed rotations
Turn to dry, now form uniform litho pattern on a photoresist.
10. the substrate after development is toasted in hot plate or baking oven, using the photoresist of substrate surface covering as etching
Film.The solvent inside photoresist is further evaporated, the ability of lower surface is protected to improve photoresist in etching and further increases
Adhesiveness between photoresist and substrate surface by force, while be also mainly to allow it to form a similar hemispherical figure, under
The etching in face is prepared.
Dry method patterning etching is carried out 11. the substrate after dry etching is placed in inductively coupled plasma etching machine, makes photoresist
On pattern copy to sapphire surface.Dry etching uses inductively coupled plasma etching equipment, and it can almost manufacture vertical
Straight surface profile.This method can also bring up to etch rate hundreds of nanometers per minute, it means that on entire wafer
Forming pattern structure only needs general a few minutes.Shorter etch period makes the technique be adapted to the requirement manufactured on a large scale.
12. the substrate after baking is handled is put into the pallet in pass box, by the manipulator in pass box by baking
Being thoroughly put on the slide glass base station in etch chamber after reason, 8*10 is extracted into by etch cavity-5Vacuum below pa, cooling cycle machine
The temperature setting that controls be subzero 5 degree of subzero 15-, after reaching above-mentioned setting value, start etching technics.
13. when the vacuum of etch chamber reaches 8*10-5Below pa, start to be passed through the boron chloride as etching gas, flow
For 200-215sccm, make the pressure of etch chamber in the range of 5.5 pas.Before boron chloride is passed through, in advance boil down to
The boron chloride of liquid becomes the active gaseous state of activity.
14. when the pressure stability of etch chamber is in the scope of 5.5 pas, output frequency source, which starts to apply above process gas, penetrates
Frequency power, 8-12 reach 1200-1500 watts between the second, and highdensity plasma is produced in the top of substrate.At the same time it is anti-
Radio frequency source also begins to power output, 20-30 watts is reached between 8-12sec, the neutral group such as intake chlorion forms Dc bias.
Automatic pressure regulating valve is started working, and makes chamber pressure control in the range of 5.5 pas.The work(of increasing/reduction anode radio frequency source
Rate can increase/reduce the density of plasma；Increasing/power of reduction bias radio frequency source can increase/reduces vertical direction
Dc bias, so as to increase/reduce the bombardment dynamics i.e. etch rate to sapphire surface.Although increasing Dc bias can increase
Add etch rate, but the selectivity for also resulting in etching is deteriorated.Both anode radio frequency source and bias radio frequency source combine, simultaneously
Etching cavity pressure is set as 5.5torr, the figure what shape can be gone out to substrate etching serves deterministic effect.
15. in the colleague of etching, cooling cycle machine is by the cooling to etching machine bottom electrode and slide glass base station by slide glass base
The temperature control of platform subzero 15-it is subzero between 5 degree, the pressure that film trap is passed through helium is 600-1200 pas, while helium is being carved
Lose the leak rate of intracavitary（Leaked from film trap to etch chamber）For 3-8sccm, controlled by pressure and flow controller, while from dynamic pressure
Force regulating valve ensures that the Stress control of etch chamber in the range of 5.5 pas, is made in the dual-cooled of cooling cycle machine and helium gas cooling
Under, the heat taken away in time under substrate is ensure that, the wherein leak rate of the setting temperature of cooling cycle machine and helium controls very heavy
Will, once deviate from setting value, it is bad to may result in radiating effect, photoresist carbonization, picture distortion, or even whole technique all without
Method goes on.
16. the etch period 480-1000 seconds, the length of etch period also influences the depth of etching, influences the big of etched features
Small and etched features shapes.
17. after etching, the substrate after etching is taken out.
18. the photoetching glue residue of substrate surface is removed using the compound of sulfuric acid and hydrogen peroxide for the substrate after etching,
Then the substrate after the etching is cleaned using acetone, ethanol and deionized water successively.
19. the substrate after cleaning is put into automatic spin-drying machine, substrate while high speed rotates substrate surface spray go from
Sub- water, the water of substrate surface is dried under the influence of centrifugal force, completes whole manufacture craft.
During using this manufacture craft, certain etch rate selection ratio can be controlled, i.e., photoresist and it is sapphire but
Speed is selected 5：1 or so.Because photoresist has passed through the baking of certain temperature, patterned surfaces has certain radian（Such as Fig. 7 institutes
Show）, due to different to photoresist upper and lower surface and Sapphire Substrate etch rate in etching process, finally in sapphire table
Face forms bag-like, coniform figure（As shown in Figure 8）.The graphical sapphire substrate is after extension, chip technology, chip brightness
It is improved largely than before, brightness is improved 30% -80%.The packaging pattern figure done is smaller, narrower gap, and chip is bright
Degree lifting is higher.
Embodiments of the invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this hair
The equivalent structure transformation that bright and accompanying drawing content is done is spoken frankly, or is directly or indirectly used in other technical fields, is similarly wrapped
Include in the scope of patent protection of the present invention.
Claims (8)
- A kind of 1. manufacture craft of patterned sapphire substrate, it is characterised in that：This technique comprises the following steps：1.1 pairs of Sapphire Substrate substrates carry out cleaning treatment；Sapphire is directed at installation with the substrate by 1.2, and sets spin coating to apply Fabric on substrate by setpoint distance substrate face；1.3 carry out projection exposure according to default conditions of exposure；Substrate after 1.4 pairs of exposures carries out development treatment；Substrate after 1.5 pairs of developments carries out dry etching processing, the mask using the photoresist of substrate surface as etching；After the temperature and vacuum and the control temperature of cooling cycle machine of 1.6 setting sensing coupling plasma etch chambers, by dry etching Substrate after processing is put on the slide glass base station in etch chamber；1.7 are passed through sensing coupling plasma etch gas performs etching to substrate, by exporting frequency source and refraction frequency source Power Control Etching speed and quality；The slide glass base station is cooled down by the cooling cycle machine simultaneously；The step 1.2 is that sapphire is aligned into installation with the substrate, and the figure of mask is set by lens control group The projection ratio projected on the substrate；The step 1.3 is to carry out subregion projection exposure in the projection ratio according to default conditions of exposure；The step 1.6 is the temperature of setting etch chamber and the control temperature of vacuum, the temperature of radome and cooling cycle machine After degree, dry etching is handled after substrate be put on the slide glass base station with multiple film traps in etch chamber；The step 1.7 is also passed through helium including each film trap and the substrate is cooled down；Also include step between the step 1.1 and 1.2：Dry etching processing is carried out to the substrate after cleaning；Also include step 1.33 between the step 1.3 and 1.4：Dry etching processing is carried out to the substrate after exposure.
- A kind of 2. manufacture craft of patterned sapphire substrate according to claim 1, it is characterised in that：The step Default conditions of exposure in 1.3 includes time for exposure, exposure light intensity, exposure area, camera lens focal plane and projection ratio；Wherein Time for exposure is 210-250msec, and exposure light intensity is 350-450mw/cm2, exposure area 3mm*3mm-4mm*4mm, projection Ratio is 5:1.
- A kind of 3. manufacture craft of patterned sapphire substrate according to claim 2, it is characterised in that：The step 1.3 carry out projection exposure in the projection ratio according to default conditions of exposure including 1.3.1 on the exposure area of the substrate Light；1.3.2 the substrate is moved by step printing equipment to change the exposure area of the substrate, repeats 1.33 Until substrate Zone Full exposure is completed.
- A kind of 4. manufacture craft of patterned sapphire substrate according to claim 1, it is characterised in that：The step Substrate after developing described in 1.5 toasts the 90-100 seconds between 90-100 degree.
- A kind of 5. manufacture craft of patterned sapphire substrate according to claim 1, it is characterised in that：The step The temperature of etch chamber described in 1.6 is 40-50 degree, and the vacuum of the etch chamber is less than 8*10-5Pa.
- A kind of 6. manufacture craft of patterned sapphire substrate according to claim 1, it is characterised in that：The step 1.7 including：1.7.1 the vacuum of the etch chamber, is made to be less than 8*10-6torr；1.7.2 etching gas to the etching, are passed through Cavity pressure is 5.5mtorr；1.7.3 it is, 1200-1500 watts by the output frequency source power setting in the 8-12 seconds；1.7.4、8-12 Frequency source power setting is reflected as 20-30 watts by described in second；1.7.5 it is that 5.5m pas etch 320-450, to keep etching cavity pressure Second.
- A kind of 7. manufacture craft of patterned sapphire substrate according to claim 1, it is characterised in that：In this process The etching gas are boron chloride, and it is 200-215sccm to be passed through flow；The helium pressure that the film trap is passed through is 5torr.
- A kind of 8. manufacture craft of patterned sapphire substrate according to claim 1, it is characterised in that：The step Also include step after 1.7：The photoresist of substrate surface after the mixture removal etching of 1.8 use sulfuric acid and hydrogen peroxide Residue, the substrate after the etching is cleaned using acetone, ethanol and deionized water successively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210158040.XA CN103426980B (en) | 2012-05-21 | 2012-05-21 | The manufacture craft of patterned sapphire substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210158040.XA CN103426980B (en) | 2012-05-21 | 2012-05-21 | The manufacture craft of patterned sapphire substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103426980A CN103426980A (en) | 2013-12-04 |
| CN103426980B true CN103426980B (en) | 2018-02-13 |
Family
ID=49651458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210158040.XA Expired - Fee Related CN103426980B (en) | 2012-05-21 | 2012-05-21 | The manufacture craft of patterned sapphire substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103426980B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016202695A1 (en) | 2015-06-17 | 2016-12-22 | Asml Netherlands B.V. | Recipe selection based on inter-recipe consistency |
| CN105405811B (en) * | 2015-11-18 | 2019-01-01 | 海迪科（南通）光电科技有限公司 | A kind of Sapphire Substrate manufacture craft |
| CN106601601B (en) * | 2017-02-06 | 2023-11-17 | 福建中晶科技有限公司 | Photoetching method of patterned sapphire substrate |
| CN107527796A (en) * | 2017-09-08 | 2017-12-29 | 如皋市下原科技创业服务有限公司 | A kind of Sapphire Substrate manufacture craft |
| CN112813415A (en) * | 2020-12-31 | 2021-05-18 | 拓荆科技股份有限公司 | Method for cleaning inside of cavity |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102129971A (en) * | 2010-12-24 | 2011-07-20 | 长治虹源科技晶体有限公司 | Method and system for etching graphical sapphire substrate |
| CN102157629A (en) * | 2010-12-24 | 2011-08-17 | 长治虹源科技晶体有限公司 | Method for manufacturing graphical sapphire substrate |
-
2012
- 2012-05-21 CN CN201210158040.XA patent/CN103426980B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102129971A (en) * | 2010-12-24 | 2011-07-20 | 长治虹源科技晶体有限公司 | Method and system for etching graphical sapphire substrate |
| CN102157629A (en) * | 2010-12-24 | 2011-08-17 | 长治虹源科技晶体有限公司 | Method for manufacturing graphical sapphire substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103426980A (en) | 2013-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102157629B (en) | Method for manufacturing graphical sapphire substrate | |
| CN103426980B (en) | The manufacture craft of patterned sapphire substrate | |
| US7460211B2 (en) | Apparatus for wafer patterning to reduce edge exclusion zone | |
| CN102129971A (en) | Method and system for etching graphical sapphire substrate | |
| JP2012243869A (en) | Substrate drying method and substrate processing apparatus | |
| CN103168346A (en) | Method for etching sapphire substrate | |
| CN109166952A (en) | A kind of graphical sapphire substrate and preparation method thereof | |
| CN109742019B (en) | A method of utilizing hard mask plate in ultraviolet laser processing dry etching | |
| JP2011174979A (en) | Mask cleaning method, mask cleaning device, and pellicle | |
| CN102169288A (en) | Method of photolithography on sapphire substrate | |
| CN104377286A (en) | Method for preparing three-dimensional micrometer concave balls | |
| CN108321261A (en) | A kind of preparation method of graphical sapphire substrate | |
| CN107346797A (en) | Sapphire Substrate nano-pore preparation method | |
| CN108493305B (en) | A kind of preparation method of graphical sapphire substrate | |
| KR20170122910A (en) | Atomic layer ething method | |
| CN106292186B (en) | A kind of photolithography method | |
| CN102768476B (en) | Method for removing optical resist | |
| KR20080088748A (en) | Equipment for plasma enhanced chemical vapor deposition and methode used the same | |
| CN109078813B (en) | Concave photoresist coating manufacturing process | |
| JP3893939B2 (en) | Resist stripping apparatus, resist stripping method, and semiconductor device manufacturing method | |
| US11367591B2 (en) | Composite plasma modulator for plasma chamber | |
| JP2016021434A (en) | Stencil mask, plasma processing apparatus and plasma processing method | |
| CN117930403B (en) | Preparation method of micro-lens and micro-lens structure | |
| US20100159708A1 (en) | Method for forming required pattern on semiconductor substrate by thermal reflow technique | |
| RU2703773C1 (en) | Method of producing arrays of regular submicron holes in thin metal films on substrates |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180213 Termination date: 20210521 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |