CN103367160B - The formation method of fin field effect pipe - Google Patents
The formation method of fin field effect pipe Download PDFInfo
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- CN103367160B CN103367160B CN201210101577.2A CN201210101577A CN103367160B CN 103367160 B CN103367160 B CN 103367160B CN 201210101577 A CN201210101577 A CN 201210101577A CN 103367160 B CN103367160 B CN 103367160B
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Abstract
A formation method for fin field effect pipe, comprising: provide Semiconductor substrate, and described semiconductor substrate surface is formed with separator; Formed and run through described separator and one end is positioned at the fin of Semiconductor substrate, described fin portion surface is higher than insulation surface; Formed and be positioned at described insulation surface and across the top of described fin and the grid structure of sidewall; Form the pseudo-side wall being positioned at described gate structure sidewall and fin sidewall; Formed and be positioned at described pseudo-side wall surface and the epitaxial loayer wrapping up described fin; Described pseudo-side wall is removed after the described epitaxial loayer of formation.The performance of the fin field effect pipe that the embodiment of the present invention is formed is good.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of formation method of fin field effect pipe.
Background technology
Along with the development of semiconductor process techniques, process node reduces gradually, and rear grid (gate-last) technique is widely applied, and to obtain desirable threshold voltage, improves device performance.But as the characteristic size (CD of device, Critical Dimension) when declining further, even if grid technique after adopting, the structure of conventional metal-oxide-semiconductor field effect transistor also cannot meet the demand to device performance, and multi-gate device is paid close attention to widely as alternative the obtaining of conventional device.
Fin field effect pipe (Fin FET) is a kind of common multi-gate device, and Fig. 1 shows the perspective view of a kind of fin field effect pipe of prior art.As shown in Figure 1, comprising: Semiconductor substrate 10, described Semiconductor substrate 10 is formed with the fin 14 of protrusion, fin 14 generally obtains after etching Semiconductor substrate 10; Dielectric layer 11, covers a part for the surface of described Semiconductor substrate 10 and the sidewall of fin 14; Grid structure 12, across on described fin 14, covers top and the sidewall of described fin 14, and grid structure 12 comprises gate dielectric layer (not shown) and is positioned at the gate electrode (not shown) on gate dielectric layer.For Fin FET, the part that the top of fin 14 and the sidewall of both sides contact with grid structure 12 all becomes channel region, namely has multiple grid, is conducive to increasing drive current, improves device performance.
But, along with the further reduction of process node, the device performance existing problems of the fin field effect pipe of prior art.
More structures about fin field effect pipe and formation method please refer to the United States Patent (USP) that the patent No. is " US7868380B2 ".
Summary of the invention
The problem that the present invention solves is to provide the formation method of the good semiconductor device of a kind of device performance, fin field effect pipe.
For solving the problem, the invention provides a kind of formation method of fin field effect pipe, comprising:
There is provided Semiconductor substrate, described semiconductor substrate surface is formed with separator;
Formed and run through described separator and one end is positioned at the fin of Semiconductor substrate, described fin portion surface is higher than insulation surface;
Formed and be positioned at described insulation surface and across the top of described fin and the grid structure of sidewall;
Form the pseudo-side wall being positioned at described gate structure sidewall and fin sidewall;
Formed and be positioned at described pseudo-side wall surface and the epitaxial loayer wrapping up described fin;
Described pseudo-side wall is removed after the described epitaxial loayer of formation.
Alternatively, the forming step of described pseudo-side wall comprises: form the pseudo-side wall film covering described separator, fin and grid structure; Remove the pseudo-side wall film being positioned at described insulation surface, fin top.
Alternatively, the material of described pseudo-side wall film is silica, silicon nitride or silicon oxynitride.
Alternatively, the height being positioned at the pseudo-side wall of fin sidewall described in is less than or equal to 1: 3 with the aspect ratio higher than the fin of insulation surface part.
Alternatively, the height being positioned at the pseudo-side wall of fin sidewall described in is more than or equal to 1: 5 with the aspect ratio higher than the fin of insulation surface part.
Alternatively, the height being positioned at the pseudo-side wall of fin sidewall described in is 10-30nm.
Alternatively, the thickness being positioned at the pseudo-side wall of fin sidewall described in is 3-10nm.
Alternatively, the material of described epitaxial loayer is SiGe, SiC, SiN or SiP.
Alternatively, the formation process of described epitaxial loayer is selective epitaxial depositing operation.
Alternatively, also comprise: before the pseudo-side wall of formation, in the fin of described grid structure both sides, doping forms source/drain region.
Alternatively, also comprise: form the flowable insulation layer covering described epitaxial loayer, separator and grid structure.
Alternatively, the material of described flowable insulation layer is silica or silicon nitride.
Alternatively, also comprise: reflow treatment is carried out to described flowable insulation layer, make the part flowable insulation layer being positioned at described epitaxial loayer and grid structure surface be back to insulation surface between adjacent two fins.
Alternatively, the forming step of described flowable insulation layer comprises: formed cover described epitaxial loayer, separator and grid structure can flowing film; Can be oxidized or nitrogen treatment by flowing film described.
Alternatively, described can the material of flowing film be boron-phosphorosilicate glass, Pyrex, phosphorosilicate glass, polyethylene oxide silicon, polyethylene silicon nitride or tetraethoxysilane.
Alternatively, also comprise: form the stressor layers covering described epitaxial loayer, separator and grid structure.
Alternatively, the material of described stressor layers is identical with the material of described epitaxial loayer, is SiGe, SiC, SiN or SiP.
Alternatively, the formation process of described stressor layers is atom layer deposition process, chemical vapor deposition method, low-pressure chemical vapor deposition process or plasma activated chemical vapour deposition technique.
Alternatively, the material of described separator is silica, silicon nitride or silicon oxynitride.
Alternatively, the forming step of described grid structure comprises: form the gate dielectric membrane covering described fin and separator; Form the gate electrode film covering described gate dielectric membrane; Formed and cover the hard mask layer of described gate electrode film, described hard mask layer defines the shape of grid, position and size; With described hard mask layer for mask, etch described gate electrode film and gate dielectric membrane, form grid; Form the side wall being positioned at described gate lateral wall.
Compared with prior art, embodiments of the invention have the following advantages:
In embodiments of the invention; pseudo-side wall is formed at fin sidewall; under the protection of described pseudo-side wall; epitaxial loayer is only formed in not by fin portion surface that pseudo-side wall covers; the small volume of the epitaxial loayer of follow-up formation; and the epitaxial loayer of adjacent two fin portion surface not easily contacts, and can not affect the carrying out of subsequent technique, and the performance of the fin field effect pipe formed is good.
Further, also comprise: form the flowable insulation layer covering described epitaxial loayer, separator and grid structure.Afterwards, also reflow treatment is carried out to described flowable insulation layer, make the part flowable insulation layer being positioned at described epitaxial loayer and grid structure surface be back to insulation surface between adjacent two fins, improve the insulation effect between adjacent two fin field effect pipes.
Further, also comprise: form the stressor layers covering described epitaxial loayer, separator and grid structure.Described stressor layers and described epitaxial loayer wrap up described fin portion surface jointly, further increase the stress of the channel region of fin field effect pipe, and the carrier mobility of its channel region is increased, and the performance of fin field effect pipe is good.
Accompanying drawing explanation
Fig. 1 is the perspective view of the fin field effect pipe of prior art;
Fig. 2 is the schematic flow sheet of the formation method of the fin field effect pipe of embodiments of the invention;
Fig. 3,4,6-15 is the cross-sectional view of the forming process of the fin field effect pipe of embodiments of the invention;
Fig. 5 is the plan structure schematic diagram of Fig. 4.
Embodiment
As described in background, prior art is along with the further reduction of process node, and the stability of the fin field effect pipe of formation has much room for improvement.
Through research, inventor finds, along with the further reduction of process node, distance between adjacent two fins reduces further, after formation grid structure, when forming the epitaxial loayer of the described fin of parcel, distance between the epitaxial loayer of adjacent two fins is difficult to control, the epitaxial loayer of described adjacent two fins formed very easily contacts, and have impact on subsequent technique, and has had a strong impact on the performance of fin field effect pipe.
Further; inventor finds; before the epitaxial loayer forming the described fin of parcel; if form pseudo-side wall at fin sidewall, under the protection of described pseudo-side wall, epitaxial loayer is only formed in not by fin portion surface that pseudo-side wall covers; the small volume of the epitaxial loayer of follow-up formation; and the epitaxial loayer of adjacent two fin portion surface not easily contacts, and can not affect the carrying out of subsequent technique, and the performance of the fin field effect pipe formed is good.
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Please refer to Fig. 2, the formation method of the fin field effect pipe of the embodiment of the present invention, comprising:
Step S201, provides Semiconductor substrate, and described semiconductor substrate surface is formed with separator;
Step S203, formed and run through described separator and one end is positioned at the fin of Semiconductor substrate, described fin portion surface is higher than insulation surface;
Step S205, is formed and is positioned at described insulation surface and across the top of described fin and the grid structure of sidewall;
Step S207, forms the pseudo-side wall being positioned at described gate structure sidewall and fin sidewall;
Step S209, is formed and is positioned at described pseudo-side wall surface and the epitaxial loayer wrapping up described fin;
Step S211, removes described pseudo-side wall after the described epitaxial loayer of formation.
Concrete, please refer to Fig. 3-Figure 15, wherein, Fig. 3,4,6-15 is the cross-sectional view of the forming process of the fin field effect pipe of embodiments of the invention; Fig. 5 is the plan structure schematic diagram of Fig. 4.
Please refer to Fig. 3, provide Semiconductor substrate 300, described Semiconductor substrate 300 surface is formed with separator 301.
Described Semiconductor substrate 300 is for the workbench as subsequent technique.The material of described Semiconductor substrate 300 is the semi-conducting material such as silicon or germanium, and described Semiconductor substrate 300 can also be silicon-on-insulator (SOI).In an embodiment of the present invention, the material of described Semiconductor substrate 300 is silicon.
Described separator 301 is for the adjacent fin field effect pipe of follow-up isolation.The formation process of described separator 301 is depositing operation, such as low-pressure chemical vapor deposition or plasma activated chemical vapour deposition.Described separator 301 be silica, silicon nitride or silicon oxynitride.In an embodiment of the present invention, described separator 301 is greater than the environment of 500 DEG C in temperature under, adopt low-pressure chemical vapor deposition to be formed, the material of the separator of formation is silica.
Please continue to refer to Fig. 3, formed and run through described separator 301 and one end is positioned at the fin 303 of Semiconductor substrate 300, described fin 303 surface is higher than separator 301 surface.
Described fin 303 is for follow-up formation fin field effect pipe.The forming step of described fin 303 comprises: etch described separator 301 and Semiconductor substrate 300, is formed and runs through described separator 301 and the groove (not shown) extending to described Semiconductor substrate 300; Fill described groove and form fin 303, the surface of described fin 303 is higher than separator 301 surface.
The material of described fin 303 is identical with the material of described Semiconductor substrate 300, is silicon.In an embodiment of the present invention, described fin 303 adopts selectivity depositing operation to be formed.
It should be noted that, in other embodiments of the invention, described fin 303 can obtain by after etch semiconductor substrates 300, and described separator 301 adopts depositing operation to obtain after formation fin 303, does not repeat them here.
Incorporated by reference to being the plan structure schematic diagram shown in Fig. 4 with reference to figure 4 and Fig. 5, Fig. 5.Formed be positioned at described separator 301 surface and across the top of described fin 303 and the grid structure (sign) of sidewall.
Described grid structure comprises: be positioned at described separator 301 surface and across the top of described fin 303 and the gate dielectric layer 305 of sidewall; Cover the gate electrode layer 307 on described gate dielectric layer 305 surface; Be positioned at the side wall 311 of described gate electrode layer 307 and gate dielectric layer 305 sidewall.Wherein, described gate electrode layer 307 and gate dielectric layer 305 form grid; the material of described gate electrode layer 307 is polysilicon or metal; the material of described gate dielectric layer 305 is oxide or high K dielectric; described side wall 311 is for protecting described grid; prevent from causing damage when subsequent technique such as adulterates and forms source/drain region to grid, the material of described side wall 311 is silica, silicon nitride or silicon oxynitride.
In an embodiment of the present invention, the material of described gate dielectric layer 305 is silica, and the material of described gate electrode layer 307 is polysilicon, and the material of described side wall 311 is silicon oxynitride.
The forming step of described grid structure comprises: form the gate dielectric membrane (not shown) covering described fin 303 and separator 301; Form the gate electrode film (not shown) covering described gate dielectric membrane; Formed and cover the hard mask layer 309 of described gate electrode film, described hard mask layer 309 defines the shape of grid, position and size; With described hard mask layer 309 for mask, etch described gate electrode film and gate dielectric membrane, form gate electrode layer 307 and gate dielectric layer 305, namely form grid; Form the side wall 311 being positioned at described gate electrode layer 307 and gate dielectric layer 305 sidewall.
Because the technique forming described grid structure is well known to those skilled in the art, do not repeat them here.
It should be noted that, in an embodiment of the present invention, after formation grid structure, before forming pseudo-side wall, in the fin 303 of described grid structure both sides, doping forms source/drain region (not shown).The technique that doping forms source/drain region is well known to those skilled in the art, does not repeat them here.
Incorporated by reference to reference to figure 6 and Fig. 7, Fig. 6 be Fig. 5 basis on form fin field effect pipe time along the generalized section in A-A1 direction, Fig. 7 be Fig. 5 basis on when forming fin field effect pipe along the generalized section in B-B1 direction.Form the pseudo-side wall 313 being positioned at described gate structure sidewall and fin 303 sidewall.
Consider that prior art is after formation grid structure, when forming the epitaxial loayer of the described fin 303 of parcel, distance between the epitaxial loayer of adjacent two fins 303 is difficult to control, the epitaxial loayer of described adjacent two fins 303 formed very easily contacts, have impact on subsequent technique, and have a strong impact on the performance of fin field effect pipe.
Inventor finds; before the epitaxial loayer forming the described fin 303 of parcel; if form pseudo-side wall 313 at fin 303 sidewall; under the protection of described pseudo-side wall 313; epitaxial loayer is only formed in fin 303 surface do not covered by pseudo-side wall 313, the small volume of the epitaxial loayer of follow-up formation, and the epitaxial loayer on adjacent two fin 303 surfaces not easily contacts; can not affect the carrying out of subsequent technique, and the performance of the fin field effect pipe formed is good.
Therefore; in an embodiment of the present invention; described pseudo-side wall 313 is for grill-protected electrode structure in subsequent technique; and for as support during follow-up formation epitaxial loayer; make the volume of the epitaxial loayer formed little; the distance of the epitaxial loayer on adjacent two fin 303 surfaces is large, contributes to the carrying out of subsequent technique.
The forming step of described pseudo-side wall 313 comprises: form the pseudo-side wall film (sign) covering described separator 301, fin 303 and grid structure; Remove the pseudo-side wall film being positioned at described separator 301 surface, fin 303 top, and retain the pseudo-side wall film being positioned at described fin 303 partial sidewall and grid structure surface.
Wherein, the material of described pseudo-side wall film is silica, silicon nitride or silicon oxynitride.For ease of follow-up removal, the material of described pseudo-side wall film is different from the material of the side wall of described grid structure.In an embodiment of the present invention, the material of described pseudo-side wall film is silicon nitride.The pseudo-side wall film being positioned at described fin 303 partial sidewall and grid structure surface of described reservation is pseudo-side wall 313.
The described height h being positioned at the pseudo-side wall 313 of fin 303 sidewall
1relevant to the size of the epitaxial loayer of follow-up formation, the size of subsequent technique window can be had influence on, i.e. the size of the distance between the epitaxial loayer of adjacent two fins 303.If described in be positioned at the height h of the pseudo-side wall 313 of fin 303 sidewall
1too little, the epitaxial loayer of follow-up formation is large, and subsequent technique window is little, the situation that the epitaxial loayer that even there will be adjacent two fins 303 contacts, and has had a strong impact on the carrying out of subsequent technique, the unstable properties of the fin field effect pipe of formation; If described in be positioned at the height h of the pseudo-side wall 313 of fin 303 sidewall
1too large, such as pseudo-side wall 313 is parallel with described fin 303 surface, the volume of the epitaxial loayer of follow-up formation then can be caused too small, affect the carrier mobility of the channel region of fin field effect pipe, and during follow-up formation conductive plunger, the contact area of conductive plunger and epitaxial loayer is little, also can affect the performance of fin field effect pipe.
Through carefully studying, inventor finds, described in be positioned at the height h of the pseudo-side wall 313 of fin 303 sidewall
1with the height h of the fin 303 higher than separator 301 surface portion
2than when being less than or equal to 1: 3, the size of the epitaxial loayer of follow-up formation can control preferably, and subsequent technique window is comparatively large, and the performance of the fin field effect pipe of formation is good.Further, inventor finds, as the described height h being positioned at the pseudo-side wall 313 of fin 303 sidewall
1with the height h of the fin 303 higher than separator 301 surface portion
2than being less than or equal to 1: 3, when being more than or equal to 1: 5, in subsequent technique, both can control the size of epitaxial loayer preferably, increase process window, the conductive plunger of follow-up formation and the contact area of epitaxial loayer can be made again to increase, further improve the performance of fin field effect pipe.
In an embodiment of the present invention, the height h of the pseudo-side wall 313 of fin 303 sidewall is positioned at described in
1for 10-30nm, the thickness size of high perpendicular direction (Fig. 6 with) being arranged in the pseudo-side wall 313 of fin 303 sidewall is 3-10nm, the superior performance of the fin field effect pipe of formation.
Incorporated by reference to reference to figure 8 and Fig. 9, Fig. 8 being cross-sectional view when Fig. 6 basis being formed fin field effect pipe, Fig. 9 is cross-sectional view when Fig. 7 basis being formed fin field effect pipe.Formed and be positioned at described pseudo-side wall 313 surface and the epitaxial loayer 315 wrapping up described fin 303.
Described epitaxial loayer 315 for introducing tension stress or compression in the channel region of fin field effect pipe, thus improves the carrier mobility of its channel region, improves the performance of fin field effect pipe.The formation process of described epitaxial loayer 315 is selective epitaxial depositing operation.Because growth rate on each direction, crystal orientation exists different, the epitaxial loayer 315 adopting selectivity depositing operation to be formed is hexahedron as shown in Figure 8,9.
The material of described epitaxial loayer 315 is relevant with the type of fin field effect pipe to be formed, and when fin field effect pipe to be formed is p-type, the material of described epitaxial loayer 315 is SiGe; When fin field effect pipe to be formed is N-shaped, the material of described epitaxial loayer 315 is SiC, SiN or SiP.In an embodiment of the present invention, the material of described epitaxial loayer is SiGe, and the fin field effect pipe of formation is p-type fin field effect pipe.
Please refer to Figure 10-Figure 11, Figure 10 is cross-sectional view when Fig. 8 basis being formed fin field effect pipe, and Figure 11 is cross-sectional view when Fig. 9 basis being formed fin field effect pipe.Described pseudo-side wall is removed after the described epitaxial loayer 315 of formation.
Remove described pseudo-side wall, so that the carrying out of subsequent technique.The technique removing described pseudo-side wall is etching technics, and such as dry etching or wet etching, do not repeat them here.
Incorporated by reference to the cross-sectional view that reference Figure 12 and Figure 13, Figure 12 are when Figure 10 basis being formed fin field effect pipe, Figure 13 is cross-sectional view when Figure 11 basis being formed fin field effect pipe.Form the flowable insulation layer 317 covering described epitaxial loayer 315, separator 301 and grid structure.
Described flowable insulation layer 317 is for the more stable fin field effect pipe of follow-up forming property.The material of described flowable insulation layer 317 is silica or silicon nitride.The forming step of described flowable insulation layer 317 comprises: formed cover described epitaxial loayer 315, separator 301 and grid structure can flowing film (not shown); Can be oxidized or nitrogen treatment by flowing film described, form flowable insulation layer 317.
Wherein, described can the material of flowing film be boron-phosphorosilicate glass, Pyrex, phosphorosilicate glass, polyethylene oxide silicon, polyethylene silicon nitride or tetraethoxysilane.To described can the flowing film gas that carries out oxidation processes employing be oxygen or ozone.In an embodiment of the present invention, described can the material of flowing film be tetraethoxysilane, to described can the flowing film gas that carries out oxidation processes employing be ozone, the material of the flowable insulation layer 317 of formation is silica.
It should be noted that, because the flowable insulation layer 317 formed covers the flowable insulation layer 317 of described epitaxial loayer 315, separator 301 and grid structure, and the real contributive part of performance to the fin field effect pipe of follow-up formation is for being positioned at the part flowable insulation layer 317 on described separator 301 surface.Therefore, in an embodiment of the present invention, be cross-sectional view when Figure 12 basis being formed fin field effect pipe incorporated by reference to reference Figure 14 and Figure 15, Figure 14, Figure 15 is cross-sectional view when Figure 13 basis being formed fin field effect pipe.Also comprise: reflow treatment is carried out to described flowable insulation layer 317, the separator 301 that the part flowable insulation layer 317 being positioned at described epitaxial loayer 315 and grid structure surface is back between adjacent two fins 303 is surperficial, makes the insulation effect of adjacent two the fin field effect pipes formed better.
It should be noted that, in other embodiments of the invention, for making the channel region stress of fin field effect pipe larger, also comprising: form the stressor layers (not shown) covering described epitaxial loayer 315, separator 301 and grid structure.The material of described stressor layers is identical with the material of described epitaxial loayer 315, is SiGe, SiC, SiN or SiP, for increasing the channel region stress of fin field effect pipe further, improves the carrier mobility of its channel region, improves the performance of fin field effect pipe.
The formation process of described stressor layers is atom layer deposition process, chemical vapor deposition method, low-pressure chemical vapor deposition process or plasma activated chemical vapour deposition technique.Because the technique adopting said method to form stressor layers technique is well known to those skilled in the art, do not repeat them here.
It should be noted that, in other embodiments of the invention, described stressor layers can also be formed on the flowable insulation layer 317 that reflow treatment crosses, not only increase the carrier mobility of the channel region of fin field effect pipe, improve the performance of fin field effect pipe, also make the insulation effect of adjacent two fin field effect pipes good.
After above-mentioned steps completes, completing of the fin field effect pipe of the embodiment of the present invention.
To sum up; in embodiments of the invention; pseudo-side wall is formed at fin sidewall; under the protection of described pseudo-side wall; epitaxial loayer is only formed in not by the fin portion surface that pseudo-side wall covers, the small volume of the epitaxial loayer of follow-up formation, and the epitaxial loayer of adjacent two fin portion surface not easily contacts; can not affect the carrying out of subsequent technique, and the performance of the fin field effect pipe formed is good.
Further, also comprise: form the flowable insulation layer covering described epitaxial loayer, separator and grid structure.Afterwards, also reflow treatment is carried out to described flowable insulation layer, make the part flowable insulation layer being positioned at described epitaxial loayer and grid structure surface be back to insulation surface between adjacent two fins, improve the insulation effect between adjacent two fin field effect pipes.
Further, also comprise: form the stressor layers covering described epitaxial loayer, separator and grid structure.Described stressor layers and described epitaxial loayer wrap up described fin portion surface jointly, further increase the stress of the channel region of fin field effect pipe, and the carrier mobility of its channel region is increased, and the performance of fin field effect pipe is good.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection range of technical solution of the present invention.
Claims (19)
1. a formation method for fin field effect pipe, is characterized in that, comprising:
There is provided Semiconductor substrate, described semiconductor substrate surface is formed with separator;
Formed and run through described separator and one end is positioned at the fin of Semiconductor substrate, described fin portion surface is higher than insulation surface;
Formed and be positioned at described insulation surface and across the top of described fin and the grid structure of sidewall;
Formed and be positioned at the pseudo-side wall of described gate structure sidewall and fin sidewall, described in be positioned at the pseudo-side wall of fin sidewall height be less than or equal to 1:3 with the aspect ratio higher than the fin of insulation surface part;
Formed and be positioned at described pseudo-side wall surface and the epitaxial loayer wrapping up described fin;
Described pseudo-side wall is removed after the described epitaxial loayer of formation.
2. the formation method of fin field effect pipe as claimed in claim 1, it is characterized in that, the forming step of described pseudo-side wall comprises: form the pseudo-side wall film covering described separator, fin and grid structure; Remove the pseudo-side wall film being positioned at described insulation surface, fin top.
3. the formation method of fin field effect pipe as claimed in claim 1, it is characterized in that, the material of described pseudo-side wall is silica, silicon nitride or silicon oxynitride.
4. the formation method of fin field effect pipe as claimed in claim 1, is characterized in that, described in be positioned at the pseudo-side wall of fin sidewall height be more than or equal to 1:5 with the aspect ratio higher than the fin of insulation surface part.
5. the formation method of fin field effect pipe as claimed in claim 1, is characterized in that, described in be positioned at the pseudo-side wall of fin sidewall height be 10-30nm.
6. the formation method of fin field effect pipe as claimed in claim 1, is characterized in that, described in be positioned at the pseudo-side wall of fin sidewall thickness be 3-10nm.
7. the formation method of fin field effect pipe as claimed in claim 1, it is characterized in that, the material of described epitaxial loayer is SiGe, SiC, SiN or SiP.
8. the formation method of fin field effect pipe as claimed in claim 1, it is characterized in that, the formation process of described epitaxial loayer is selective epitaxial depositing operation.
9. the formation method of fin field effect pipe as claimed in claim 1, is characterized in that, also comprise: before the pseudo-side wall of formation, and in the fin of described grid structure both sides, doping forms source/drain region.
10. the formation method of fin field effect pipe as claimed in claim 1, is characterized in that, also comprise: form the flowable insulation layer covering described epitaxial loayer, separator and grid structure.
The formation method of 11. fin field effect pipes as claimed in claim 10, is characterized in that, the material of described flowable insulation layer is silica or silicon nitride.
The formation method of 12. fin field effect pipes as claimed in claim 10, it is characterized in that, also comprise: reflow treatment is carried out to described flowable insulation layer, make the part flowable insulation layer being positioned at described epitaxial loayer and grid structure surface be back to insulation surface between adjacent two fins.
The formation method of 13. fin field effect pipes as claimed in claim 10, it is characterized in that, the forming step of described flowable insulation layer comprises: formed cover described epitaxial loayer, separator and grid structure can flowing film; Can be oxidized or nitrogen treatment by flowing film described.
The formation method of 14. fin field effect pipes as claimed in claim 13, is characterized in that, described can the material of flowing film be boron-phosphorosilicate glass, Pyrex, phosphorosilicate glass, polyethylene oxide silicon, polyethylene silicon nitride or tetraethoxysilane.
The formation method of 15. fin field effect pipes as claimed in claim 1, is characterized in that, also comprise: form the stressor layers covering described epitaxial loayer, separator and grid structure.
The formation method of 16. fin field effect pipes as claimed in claim 15, it is characterized in that, the material of described stressor layers is identical with the material of described epitaxial loayer, is SiGe, SiC, SiN or SiP.
The formation method of 17. fin field effect pipes as claimed in claim 15, is characterized in that, the formation process of described stressor layers is atom layer deposition process, low-pressure chemical vapor deposition process or plasma activated chemical vapour deposition technique.
The formation method of 18. fin field effect pipes as claimed in claim 1, is characterized in that, the material of described separator is silica, silicon nitride or silicon oxynitride.
The formation method of 19. fin field effect pipes as claimed in claim 1, it is characterized in that, the forming step of described grid structure comprises: form the gate dielectric membrane covering described fin and separator; Form the gate electrode film covering described gate dielectric membrane; Formed and cover the hard mask layer of described gate electrode film, described hard mask layer defines the shape of grid, position and size; With described hard mask layer for mask, etch described gate electrode film and gate dielectric membrane, form grid; Form the side wall being positioned at described gate lateral wall.
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| US8937353B2 (en) * | 2010-03-01 | 2015-01-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual epitaxial process for a finFET device |
| US9312179B2 (en) * | 2010-03-17 | 2016-04-12 | Taiwan-Semiconductor Manufacturing Co., Ltd. | Method of making a finFET, and finFET formed by the method |
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| CN103367160A (en) | 2013-10-23 |
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