CN103308178B - A kind of asymmetric correction method of un-cooled infrared focal plane array - Google Patents
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Abstract
The embodiment of the invention discloses a kind of asymmetric correction method of un-cooled infrared focal plane array, comprise and calculate the correction parameter of infrared focal plane array at least two staking-out work temperature and stored in memory; Measure the underlayer temperature of infrared focal plane array; According to underlayer temperature, from storer, obtain the current correction parameter corresponding with underlayer temperature; With current correction parameter correction infrared image.Owing to storing the correction parameter of infrared focal plane array at each staking-out work temperature in method of the present invention, when infrared focal plane array works, do not need to carry out a point calibration to infrared focal plane array, directly from system storage, read the correction parameter corresponding with infrared focal plane array current operating temperature, thus it is continual to infrared target real time imagery to ensure that infrared imaging system realizes.
Description
Technical field
The present invention relates to infrared imaging system field, especially relate to a kind of asymmetric correction method of un-cooled infrared focal plane array.
Background technology
Infrared focal plane array is beginning of the eighties late 1970s, grows up under the promotion that national defense applications and other strategy and tactics are applied.It is the important photoelectric device obtaining scenery infrared emanation information.Infrared focal plane array is the core component of infrared imagery technique, is widely used in the imaging of the every field such as military affairs, industry, agricultural, medical treatment, forest fire protection.
Infrared imaging system is the important component part of infra-red thermal imaging system.Current various infrared imaging system has been widely applied to communication, medical treatment, military affairs, the field such as industrial.
Infrared focal plane array belongs to second generation infrared imaging device, is the core of modern infrared imaging system, has that structure is simple, working stability, noise equivalent temperature difference are little, sensitivity advantages of higher.
In the ideal case, infrared focal plane array is by homogeneous radiation, and output amplitude should be just the same for infrared system.But in fact, due to the impact of the factor such as the semiconductor material of making devices uneven (unevenness etc. of impurity concentration, crystal defect, inner structure), mask error, defect, process conditions, when by homogeneous radiation, its output amplitude is not identical, the heterogeneity of infrared focal plane array response that Here it is.
Cause infrared heteropical reason to have a lot, wherein mainly thermal imagery detects the heterogeneity of unit self, and external world's input of infrared focal plane array also can cause heteropical impact in addition.As the bias voltage of detector, the difference of bias current, also can cause the unevenness of output, main manifestations is fixing additive noise.But owing to being subject to the restriction making material and manufacture craft, the response characteristic of each pixel of infrared focal plane array cannot be accomplished completely the same.
This heterogeneity of infrared focal plane array can have a strong impact on detection sensitivity and the spatial resolution of infrared imaging system.Therefore, all need in actual use to do Nonuniformity Correction to infrared focal plane array.
At present, conventional infrared Nonuniformity Correction has a variety of, as based on a point calibration of calibration, two point correction non-uniform algorithm, the temporal high pass filter method based on scene, adaptive artificial neural network method and Mean Filtering Algorithm etc.But also do not find the algorithm that a kind of adaptability is stronger at present, various heterogeneity algorithms have its deficiency.
In prior art, what be extensively applied to practice at present is some scaling algorithms and two-point calibration algorithm.
Two point correction algorithm considers the gain inequality of detector and biased unevenness, and under normal conditions, when incident IR radiation is zero time, the response of detector exports non-vanishing.The resonse characteristic of all probe units by rotating translation, is transformed to same resonse characteristic by peg method.After overcorrect, under uniform radiation input condition, the output electric signal of each probe unit is identical, thus eliminates the heterogeneity noise of infrared image.But the two point correction carrying out infrared image needs to carry out Temperature Scaling.
Some correcting algorithms are Non-uniformity Correction Algorithms the earliest, for two kinds of situations of gain coefficient unevenness and biased coefficient unevenness, one-point calibration also can be divided into two kinds, the correction being divided into gain coefficient uneven and biased uneven correction, but once can only meet a kind of correction.
Adopt biased nonuniformity correction, the principle of one point calibration is that the radiation flux of the output signal of the supposition photosensitive unit of detector and target is linear, some correcting algorithms are exactly under even optical radiation, the output signal of each pixel is corrected to unanimously, namely under a certain light irradiance, the output signal of different pixels is corrected to a certain signal, and this signal can be maximal value under this condition or some other values, generally averages.
The essence of one point calibration has just done compensation to the dark current of device, does not make correction to gain.
In the real work of focal plane arrays (FPA), in nonlinear relationship between the output signal of the photosensitive unit of detector and the radiation flux of target, gain also can produce nonlinearities change along with the change of environment temperature with biased, causes the infrared heterogeneity of infrared focal plane array.Two point correction method is that the working temperature of infrared focal plane array interval is divided into each little temperature range by the rising gradient of temperature.In a little temperature range, assuming that the output signal of the photosensitive unit of detector and the radiation flux of target linear, then utilize the algorithm of two point correction to calculate offset parameter in this little temperature range.
Along with the demand in market and the progress of technology, current infrared imaging system generally have employed the packing forms without TEC, infrared imaging system without TEC packing forms is carried out except traditional two point correction except needing, in the use procedure of reality, due to the change occurred along with the change of the time used and environment temperature and the temperature of infrared imaging system focal plane arrays (FPA) itself, temperature drift can be produced, therefore need to carry out shutter correction frequently to eliminate infrared heteropical impact of infrared focal plane array.
Under wide temperature range, if utilize some correcting algorithms to eliminate the infrared heterogeneity of infrared focal plane array, uniform irradiance is chosen to infrared imaging system focal plane arrays (FPA) when needing to correct on one point, this method makes in the actual use procedure of infrared imaging system, and necessary brief interruption infrared imaging system is to the acquisition of information of infrared target.The correction of this shutter has frequently had a strong impact on the Continuous Observation of infrared imaging system to infrared target.
Summary of the invention
An object of the present invention be to provide a kind of can upgrade infrared imaging system correction parameter and do not need the asymmetric correction method of the un-cooled infrared focal plane array interrupting infrared imaging system.
Disclosed in the embodiment of the present invention, technical scheme comprises:
Provide a kind of asymmetric correction method of un-cooled infrared focal plane array, it is characterized in that, comprising: steps A: calculate the correction parameter of infrared focal plane array at least two staking-out work temperature, and described correction parameter is stored in memory; Step B: the underlayer temperature measuring described infrared focal plane array; Step C: according to described underlayer temperature, obtains the current correction parameter corresponding with described underlayer temperature from described storer; Step D: carry out infrared imaging to target object with described infrared focal plane array, obtains infrared image; Step e: described infrared image is corrected by described current correction parameter.
Further, described steps A comprises: infrared imaging system be placed in constant temperature oven; Regulate the temperature of described constant temperature oven to the first staking-out work temperature and remain on described first staking-out work temperature; First correction parameter of described infrared focal plane array at described first staking-out work temperature of described infrared imaging system is calculated with peg method; Described first correction parameter is stored in which memory; Regulate the temperature of described constant temperature oven to the second staking-out work temperature and remain on described second staking-out work temperature; Second correction parameter of described infrared focal plane array at described second staking-out work temperature is calculated with peg method; Described second correction parameter is stored in which memory.
Further, described steps A also comprises: regulate the temperature of described constant temperature oven to the 3rd staking-out work temperature and remain on described 3rd staking-out work temperature; Three correction parameter of described infrared focal plane array at described 3rd staking-out work temperature is calculated with peg method; Described 3rd correction parameter is stored in which memory.
Further, described step C comprises: more described underlayer temperature and described at least two staking-out work temperature, obtain equal with described underlayer temperature or with the minimum staking-out work temperature of the difference between described underlayer temperature as corresponding working temperature; Reading the correction parameter under described corresponding working temperature in which memory, is described current correction parameter with the correction parameter under described corresponding working temperature.
Further, described step C comprises: more described underlayer temperature and the little temperature range belonging to described at least two staking-out work temperature, judge the little temperature range belonging to described underlayer temperature; Be described current correction parameter with the correction parameter of the little temperature range belonging to described underlayer temperature.
Further, described correction parameter comprises offset parameter and/or gain parameter.
In the method for embodiments of the invention, owing to storing the correction parameter of infrared focal plane array under each staking-out work temperature spot, when infrared focal plane array works, do not need to carry out a point calibration to infrared focal plane array, directly from system storage, read the correction parameter corresponding with infrared focal plane array current operating temperature, thus it is continual to infrared target real time imagery to ensure that infrared imaging system realizes.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the asymmetric correction method of a kind of un-cooled infrared focal plane array of one embodiment of the invention.
Fig. 2 is demarcation in one embodiment of the invention and stores the schematic flow sheet of the step of correction parameter.
Embodiment
Describe embodiments of the invention in detail below with reference to the accompanying drawings.
Fig. 1 is the schematic flow sheet of the asymmetric correction method of a kind of un-cooled infrared focal plane array of one embodiment of the invention.As shown in Figure 1, in the present embodiment, the asymmetric correction method of un-cooled infrared focal plane array comprises step 10, step 12, step 14 and step 16.Below in conjunction with accompanying drawing, each step in method is described in detail.
Step 10: demarcate and store correction parameter.
In embodiments of the invention, first the infrared focal plane array of infrared imaging system is demarcated, obtain the correction parameter of this infrared focal plane array at each staking-out work temperature, then these correction parameters are stored in the storer of infrared imaging system, for in follow-up infrared imaging process, call on demand.Such as, in follow-up infrared imaging process, in time there is temperature drift, from storer, read the current correction parameter at relevant work temperature and correct the drift of compensation temperature with this current correction parameter to infrared image.
The working temperature of infrared focal plane array has certain interval range, if demarcated each temperature spot in working temperature interval range, workload will be very huge, and need the data volume of the correction parameter stored also will very greatly, therefore demarcate very difficult to each temperature spot.
Therefore, in embodiments of the invention, some staking-out work temperature (at least two staking-out work temperature) can be selected in the working temperature interval of infrared focal plane array to demarcate, obtain the correction parameter at these staking-out work temperature (at least two staking-out work temperature).
In some embodiments of the present invention, interval for the working temperature of the infrared focal plane array gradient risen by temperature can be divided into each little temperature range.According to the sensitivity of the temperature sensor of infrared imaging system and the material behavior of infrared focal plane array, for each little temperature range chooses suitable temperature range.In same little temperature range, use identical correction parameter.Different little temperature ranges, correction parameter is different.Like this, for each little temperature range, the correction parameter of correction parameter as whole little temperature range at one of them temperature spot place only need be demarcated, namely, now, the staking-out work temperature being used for demarcating of aforementioned selection belongs to a temperature in these little temperature ranges respectively.Here, all can select flexibly according to actual conditions for the selection of the temperature of demarcating in the selection of little temperature range and little temperature province, the present invention does not do special restriction.
In these embodiments, in the storer of infrared imaging system, correspondingly also store the relevant information of each little temperature province, temperature value of the such as end points of each little temperature range etc.
In other embodiments of the present invention, the staking-out work temperature being used for demarcating of aforementioned selection is some temperature spots selected according to the needs of actual conditions in the working temperature interval of infrared focal plane array.The correction parameter of its nearest staking-out work temperature of all the other temperature spot service ranges between two selected staking-out work temperature.Here, the selection of staking-out work temperature can be selected flexibly according to actual conditions, and the present invention does not do particular restriction.Spacing between each staking-out work temperature difference of temperature (namely between two staking-out work temperature) can be identical (the staking-out work temperature namely selected is uniformly distributed in the working temperature interval of infrared focal plane array), also can be different (the staking-out work temperature namely selected is non-uniform Distribution in the working temperature interval of infrared focal plane array).
Therefore, in step 10, calculate the correction parameter of infrared focal plane array at least two staking-out work temperature, and the correction parameter calculated is stored in the storer of infrared imaging system.
In one embodiment of the present of invention, demarcating and store the flow process of correction parameter can be as shown in Figure 2.
First, in a step 101, infrared imaging system is positioned in constant temperature oven, that is, will carries out in constant temperature oven the calibration process of the infrared focal plane array of infrared imaging system.
Then, in a step 102, the temperature of regulating constant incubator, is adjusted to a staking-out work temperature by the temperature of constant temperature oven, and remains on this staking-out work temperature.
Subsequently, in step 106, the correction parameter of infrared focal plane array at current staking-out work temperature is calculated.Here, under calculating uniform temperature, the method for the correction parameter of infrared focal plane array can use any applicable method, such as, can use two point correction method.These methods can be methods conventional in this area, are not described in detail in this.
Then, the correction parameter at this staking-out work temperature calculating acquisition in step 106 is stored in the storer of infrared imaging system.Calculate the correction parameter obtained can be stored in any applicable storer in infrared imaging system.
Like this, demarcation and the storage of the correction parameter at a staking-out work temperature is namely completed.
After the demarcation of the correction parameter at this staking-out work temperature and storage complete, in step 110, judge whether that all staking-out work temperature of demarcating that needs all have been demarcated.Here, as mentioned before, the staking-out work temperature of demarcating is needed can to select flexibly according to actual conditions.
If judge in step 110 that all staking-out work temperature of demarcating that needs also have not been demarcated, then the temperature of regulating constant incubator is to next staking-out work temperature, and remains on this staking-out work temperature, then performs above-mentioned step 106,108 and 110.
If judge in step 110 that all staking-out work temperature of demarcating that needs all have been demarcated, then demarcate and store correction parameter step (namely step 10) terminates.
Such as, in an embodiment, step 10 can comprise the following steps:
Infrared imaging system is placed in constant temperature oven;
The temperature of regulating constant incubator is to the first staking-out work temperature and remain on the first staking-out work temperature;
First correction parameter of infrared focal plane array at the first staking-out work temperature of infrared imaging system is calculated with peg method;
First correction parameter is stored in memory;
The temperature of regulating constant incubator is to the second staking-out work temperature and remain on the second staking-out work temperature;
Second correction parameter of infrared focal plane array at the second staking-out work temperature is calculated with peg method;
Second correction parameter is stored in memory.
In above-described embodiment, can also comprise:
The temperature of regulating constant incubator is to the 3rd staking-out work temperature and remain on the 3rd staking-out work temperature;
Three correction parameter of infrared focal plane array at the 3rd staking-out work temperature is calculated with peg method;
3rd correction parameter is stored in memory.
Easy understand, similarly, above-described embodiment can also be included in the similar step at multiple staking-out work temperature of the 4th staking-out work temperature, the 5th staking-out work temperature, the 6th staking-out work temperature etc.
In embodiments of the invention, when storing the correction parameter at each staking-out work temperature calculating and obtain, can according to any applicable mode or data structure storage.Such as, storer can be divided into multiple storage space according to the number of the staking-out work temperature chosen, each storage space chooses suitable size according to the specification of infrared focal plane array, a staking-out work temperature of the corresponding infrared focal plane array of each storage space, and the correction calculated according to abovementioned steps under storing this corresponding staking-out work temperature, in a storage space, correction parameter can store successively according to the distribution of infrared focal plane array pixel position.
In embodiments of the invention, aforesaid correction parameter can be any parameter being suitable for correcting the heterogeneity of the infrared focal plane array of infrared imaging system.Such as, in an embodiment, correction parameter here can be offset parameter and/or gain parameter.The concept of offset parameter and/or gain parameter is the Common Concepts in this area in nonuniformity correction, is not described in detail in this.
Step 12: the underlayer temperature measuring infrared focal plane array.
The underlayer temperature of infrared focal plane array illustrates the current working temperature of infrared focal plane array.In embodiments of the invention, in step 12, the underlayer temperature of infrared focal plane array is measured.This measurement can be realized by temperature sensor.The substrate temperature of infrared focal plane array is converted to electric signal by temperature sensor, and through analog to digital conversion, converts digital signal to, is then sent to the controller of infrared imaging system.
Such as, in an embodiment, temperature sensor can comprise thermistor.The resistance of thermistor can change with the change of temperature, and when the underlayer temperature of infrared focal plane array changes, the resistance size of thermistor also follower changes, and the voltage VTEMP that temperature sensor is exported changes.The underlayer temperature of VTEMP and infrared focal plane array linear:
VTEMP=A×T+B。
Wherein, T is the underlayer temperature of infrared focal plane array, A and B is constant coefficient, is determined by the characteristic of the temperature sensor of infrared imaging system.
Step 14: obtain the current correction parameter corresponding with underlayer temperature.
Measure after obtaining underlayer temperature, according to this underlayer temperature, the current correction parameter corresponding with this underlayer temperature of infrared focal plane array can be obtained from previously described storer.
As mentioned before, in some embodiments, in storer, store the correction parameter at multiple staking-out work temperature, and the correction parameter wherein at each staking-out work temperature is the correction parameter of infrared focal plane array in a little temperature range.Therefore, at step 14, after obtaining underlayer temperature, judge which little temperature range this underlayer temperature belongs to, then, using the correction parameter of the little temperature range belonging to it as the current correction parameter corresponding with this underlayer temperature.Here, the current correction parameter of infrared focal plane array under this underlayer temperature is referred to the current correction parameter of underlayer temperature " corresponding ".
Such as, in these embodiments, can determine which little temperature range this underlayer temperature belongs to by comparing the temperature value of the end points of each the little temperature range stored in the storer of underlayer temperature and infrared imaging system.
As mentioned before, the correction parameter of each little temperature range has been demarcated in step 10 and has stored, therefore, now, judgement place is measured after which little temperature range the underlayer temperature obtained belong to, and directly can read the correction parameter of the little temperature range belonging to it from storer.
Or, as mentioned before, in some embodiments in addition, storer stores the correction parameter at multiple staking-out work temperature, and the correction parameter of all the other temperature spots between two staking-out work temperature can the correction parameter of its nearest staking-out work temperature of service range.Therefore, now, at least two staking-out work temperature in underlayer temperature and step 10 can be compared, obtain equal with underlayer temperature or with the minimum staking-out work temperature of the difference between underlayer temperature as corresponding working temperature; Then the correction parameter under this corresponding working temperature is read in memory, with the correction parameter under this corresponding working temperature for current correction parameter.
Step 16: infrared imaging obtains infrared image, and with current correction parameter correction infrared image.
After obtaining the current correction parameter at current substrate temperature, by infrared imaging system (using infrared focal plane array in other words), normal infrared imaging is carried out to target object, obtain infrared image.With infrared imaging system or infrared focal plane array to target object carry out infrared imaging obtain the concrete steps of infrared image can be identical with step conventional in this area, be not described in detail in this.
After obtaining infrared image, the current correction parameter namely obtained in available step 14 corrects the infrared image obtained.
Such as, in an embodiment, current correction parameter comprises current bias parameter O and current gain parameter G, then can according to formula V ' (i, j)=G(i, j) × V(i, j)+O(i, j) calculate and correct result, generate the infrared image after correcting.Wherein V ' (i, j) be correct after infrared image in pixel (i, j) magnitude of voltage at place, V(i, j) pixel (i in the infrared image before correcting, j) magnitude of voltage at place, G(i, j) be that current gain parameter is at pixel (i, j) value at place, O(i, j) be the value of current bias parameter at pixel (i, j) place, here (i, j) refer to the pixel in infrared focal plane array, wherein i is the natural number of the line number being less than or equal to infrared focal plane array, and j is the natural number of the columns being less than or equal to infrared focal plane array.
Like this, in embodiments of the invention, in the process of carrying out normal infrared imaging, can the underlayer temperature of Real-Time Monitoring infrared focal plane array, and from storer, read corresponding correction parameter according to underlayer temperature in real time and Nonuniformity Correction is carried out to formed infrared image.
Method in embodiments of the invention can by any applicable software or hardware instance.Such as, in an embodiment, can realize with FPGA correcting circuit, FPGA correcting circuit has the advantages such as simplicity of design, easily realization.
Such as, the correction parameter of infrared focal plane array at each staking-out work temperature is stored in FLASH chip according to the increasing progressively of staking-out work temperature of infrared focal plane array with increasing progressively of pixel number successively.When infrared imaging system works, the temperature sensor of infrared imaging system gathers infrared focal plane array substrate temperature information, convert output voltage to, complete after digital-to-analog conversion inputing to FPGA through A/D converter part, FPGA selects corresponding correction parameter according to the information of input.Infrared target object is through infrared imaging system identification, infrared imaging system gathers and exports relevant information, the information exported delivers to A/D converter part after signal is strengthened, FPGA is inputed to after completing digital-to-analog conversion, export after the operation and image enhaucament of correction program, data, through D/A converter part, are input to terminal presentation facility through amplifier after converting simulating signal to.
In embodiments of the invention, for the problem needing when a point calibration to choose irradiance, recalculate correction parameter, the correction parameter of infrared focal plane array at each staking-out work temperature is stored in the system memory, when infrared focal plane array is when working the drift of appearance temperature, from system storage, read the correction parameter corresponding with infrared focal plane array current operating temperature, then utilize the correction parameter of this reading to carry out coming the drift of rectification building-out temperature.
Infrared focal plane array needs when carrying out a point calibration again to choose irradiance, such meeting short interruption infrared imaging system is to the imaging of infrared target, and owing to storing the correction parameter of infrared focal plane array at each staking-out work temperature in method of the present invention, when infrared focal plane array works, do not need to carry out a point calibration to infrared focal plane array, directly from system storage, read the correction parameter corresponding with infrared focal plane array current operating temperature, thus it is continual to infrared target real time imagery to ensure that infrared imaging system realizes.
Described the present invention by specific embodiment above, but the present invention is not limited to these specific embodiments.It will be understood by those skilled in the art that and can also make various amendment, equivalent replacement, change etc. to the present invention, as long as these conversion do not deviate from spirit of the present invention, all should within protection scope of the present invention.In addition, " embodiment " described in above many places represents different embodiments, can certainly by its all or part of combination in one embodiment.
Claims (4)
1. an asymmetric correction method for un-cooled infrared focal plane array, is characterized in that, comprising:
Steps A: calculate the correction parameter of infrared focal plane array at least two staking-out work temperature, and described correction parameter is stored in memory;
Step B: the underlayer temperature measuring described infrared focal plane array;
Step C: according to described underlayer temperature, obtains the current correction parameter corresponding with described underlayer temperature from described storer;
Step D: carry out infrared imaging to target object with described infrared focal plane array, obtains infrared image;
Step e: described infrared image is corrected by described current correction parameter;
Wherein, described step C comprises:
More described underlayer temperature and the little temperature range belonging to described at least two staking-out work temperature, judge the little temperature range belonging to described underlayer temperature;
Be described current correction parameter with the correction parameter of the little temperature range belonging to described underlayer temperature.
2. the method for claim 1, is characterized in that, described steps A comprises:
Infrared imaging system is placed in constant temperature oven;
Regulate the temperature of described constant temperature oven to the first staking-out work temperature and remain on described first staking-out work temperature;
First correction parameter of described infrared focal plane array at described first staking-out work temperature of described infrared imaging system is calculated with peg method;
Described first correction parameter is stored in which memory;
Regulate the temperature of described constant temperature oven to the second staking-out work temperature and remain on described second staking-out work temperature;
Second correction parameter of described infrared focal plane array at described second staking-out work temperature is calculated with peg method;
Described second correction parameter is stored in which memory.
3. method as claimed in claim 2, it is characterized in that, described steps A also comprises:
Regulate the temperature of described constant temperature oven to the 3rd staking-out work temperature and remain on described 3rd staking-out work temperature;
Three correction parameter of described infrared focal plane array at described 3rd staking-out work temperature is calculated with peg method;
Described 3rd correction parameter is stored in which memory.
4. the method for claim 1, is characterized in that, described correction parameter comprises offset parameter and/or gain parameter.
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| CN1811360A (en) * | 2006-02-24 | 2006-08-02 | 昆明物理研究所 | Adaptive non-uniform correcting method for stare infrared focal plane detector |
| CN102564598A (en) * | 2012-01-06 | 2012-07-11 | 电子科技大学 | Method for calibrating and correcting temperature measurement of infrared probe as well as corresponding temperature measuring method |
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