CN103293503B - Probe card detecting method - Google Patents
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- CN103293503B CN103293503B CN201310199768.1A CN201310199768A CN103293503B CN 103293503 B CN103293503 B CN 103293503B CN 201310199768 A CN201310199768 A CN 201310199768A CN 103293503 B CN103293503 B CN 103293503B
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Abstract
A probe card detecting method includes: providing a wafer, wherein a plurality of conducting areas are distributed on the wafer, at least two conducting areas are electrically connected, and a random conducting area is electrically connected with one conducting area; aligning probes on a probe card to the conducting areas on the wafer; detecting contact resistance between the two probes aligned to the two conducting areas which are electrically connected; if the contact resistance is within an expected resistance range, judging the two probes corresponding to the contact resistance to be qualified; and if the contact resistance exceeds the expected resistance range, judging the two probes corresponding to the contact resistance to be unqualified. By the aid of the probe card detecting method, every probe can be accurately detected whether to have a problem or not, so that existing problems can be further detected in follow-up processes, and the probe card can be replaced or maintained timely. Furthermore, faulted probes can be found early, influence on follow-up wafer tests from the faulted probes is eliminated, and accuracy of the wafer tests is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to a kind of detection method of probe card.
Background technology
In technical field of semiconductors, before integrated antenna package, need to do functional test using probe to wafer, select
Substandard product carries out follow-up encapsulation engineering again, bad products can be avoided to continue processing and cause to waste.Probe card
（Probe Card）It is responsible for the electrical connection between test system and IC chip.When functional test is carried out to wafer,
Probe in probe card and the weld pad on chip carry out one-to-one contact, wafer is exported with test signal or receives wafer output
Signal.
Therefore, play an important role in probe card On-Wafer Measurement.Wherein, the be aligned of each weld pad and probe is required
, if the contact with weld pad for the probe card is bad, or even probe deflects away from the scope of weld pad or probe card itself is problematic, can exist
Obtain inaccurate, inaccurate in wafer sort later, even full of prunes test result.Further, some scripts close
The product of lattice is unqualified and be abandoned because of test result, causes product to waste；The underproof product of some scripts is because of test knot
Really qualified and be provided to client, the prestige of chip maker will be had influence on and bring economic loss.So, using probe card
Before carrying out wafer sort, need probe card is detected, determine whether this probe card is qualified.
But, in the prior art, before On-Wafer Measurement, whether qualified detection probe card technique is very complicated.
Content of the invention
The present invention solve problem be, in the prior art, the whether qualified technique of detection probe card before On-Wafer Measurement
Very complicated.
For solving the above problems, the present invention provides a kind of new probe card detection method, including：
Wafer is provided, multiple conduction regions is distributed on described wafer, at least two conduction regions electrically connect and any one is led
Electric area is only electrically connected with a conduction region；
Probe in described probe card is aligned with the conduction region on wafer；
Record the contact resistance between two probes of the two conduction region contrapositions electrically connecting；
If described contact resistance is located in expected resistance range, judge that two probes of corresponding described contact resistance close
Lattice；
The resistance range if described contact resistance surpasss the expectation, judges that two probes of corresponding described contact resistance do not conform to
Lattice.
Alternatively, also include：In the both sides of two conduction regions not electrically connected, and near described two do not electrically connect lead
Two parallel wires are set at electric area；
After by the conduction region contraposition on the probe in described probe card and wafer, record and do not electrically connect with described two
Detection electric current between two probes of conduction region contraposition；
If described detection electric current is located in the range of prospective current, judge that two probes of correspondence described detection electric current can
Form one-to-one alignment with two conduction regions of corresponding described detection electric current；
If described detection electric current surpasss the expectation current range, judge that two probes of correspondence described detection electric current cannot be with
Two conduction regions of correspondence described detection electric current form one-to-one be aligned.
Alternatively, the quantity of described conduction region is more than or equal to the quantity of described probe on probe clamp.
Alternatively, all two adjacent conduction region electrical connections, and any one conduction region is only adjacent with one of
Conduction region electrically connects.
Alternatively, also include：In all two neighboring conduction region both sides not electrically connected, and near described two neighboring not
Two parallel wires are set at the conduction region of electrical connection.
Alternatively, the method recording the contact resistance between two probes of the two conduction region contrapositions electrically connecting, bag
Include：
Applied voltage between two probes of the two conduction region contrapositions electrically connecting；
Test the electric current passing through between described two probes；
Described voltage is contact resistance with the ratio of electric current.
Alternatively, the described side recording the detection electric current between two probes of conduction region contraposition not electrically connected with two
Method, including：
Applied voltage between two probes of described two conduction regions not electrically connected contraposition；
Test the detection electric current between described two probes.
Alternatively, to each probe test twice more than, each probe corresponding obtains multiple contact resistances.
Alternatively, described conduction region includes chip, the weld pad being located on chip.
Compared with prior art, the present invention has advantages below：
The present invention provides wafer, is distributed multiple conduction regions on wafer, by least two conduction region electrical connections and any one
Individual conduction region is only electrically connected with a conduction region；Probe in probe card is aligned with the conduction region on wafer；Record and be electrically connected
Contact resistance between two probes of two conduction region contrapositions connecing.Probe and conduction region formed good be aligned, contact
When, with the expected resistance range very little between two probes of the two conduction region contrapositions electrically connecting.As premise, if recording
Contact resistance generally within expected resistance range, then preliminary judgement to should two probes of contact resistance can be with conduction region
Form good contact, be aligned, this two probes are qualified probes.If recording contact resistance to surpass the expectation resistance range, judge
The probe of corresponding contact resistance is unqualified, and the problem that probe is likely to occur is：Firstth, probe is too short or hardness is inadequate, causes to visit
Pin cannot provide enough acupuncture treatment dynamics；Second, probe tip is relatively thick so that contact resistance increases；3rd, the position of probe is not
Can be completely relative with the position of corresponding conduction region, such as probe bending, cause the needle point of probe to deflect away from predetermined acupuncture treatment position,
Even deflect away from conduction region, and then can not be accurately aimed at, contact with the formation of corresponding conduction region.Using the detection method of the present invention,
Can accurately record whether each probe goes wrong so that subsequent technique can be examined further for produced problem
Look into, cause the underproof concrete reason of probe to determine, and then in good time replacing or repairing probe card.In addition, using the present invention's
Technical scheme, probe of can pinpointing the problems early, and the impact that queueing problem probe is tested to subsequent wafer, and then improve wafer
The accuracy of test, reduces the cost of wafer sort, improves wafer sort efficiency.And, the probe card detection method of the present invention
Simply, cost is relatively low, can easily, whether detection probe card is qualified effectively.
Further, in the both sides of any two conduction region not electrically connected, and the conduction not electrically connected very close to two
Two parallel wires are set at area；After contraposition, record with two probes of the described two conduction regions contraposition not electrically connected it
Between detection electric current.According to record detection current value it is possible to determine that whether the probe that electric current should be detected can be realized with
Conduction region forms one-to-one be aligned.When probe can be formed between conduction region good when being aligned, contacting, this two probes it
Between detection electric current be breaking current without two conduction regions, this breaking current very little, this breaking current scope is in uA extremely
PA rank, defining this less breaking current is prospective current scope.As premise, surpass the expectation electricity when recording detection electric current
Stream scope, then judge that the position of this two probes can not be completely relative with the position of two conduction regions, such as probe bending, probe
Acupuncture treatment deflect away from conduction region and and conductive contact, cause short circuit between two probes.Therefore, using this technical scheme, further really
Whether two probes of fixed corresponding detection electric current bending, deformation, and cause this two probes can not form one with conduction region
Problem to a be aligned, reaches the purpose of accurate probe problem.
Brief description
Fig. 1 is the wafer schematic top plan view of the probe card detection method of the specific embodiment of the invention；
Fig. 2 is the wafer enlarged diagram of specific embodiment of the invention probe card detection method；
Fig. 3 is the contraposition schematic diagram with wafer for the probe card of specific embodiment of the invention probe card detection method.
Specific embodiment
Inventor, through creative work, obtains a kind of probe card detection method.
In the present embodiment, the step of this new probe card detection method is：
First, provide wafer, multiple conduction regions are distributed on wafer, the quantity of conduction region is more than or equal to the spy in probe card
Pin quantity, any two conduction region is electrically connected and any one conduction region is only electrically connected with one of conduction region.
Then, all probes in probe card are aligned with the conduction region on wafer.
Afterwards, applied voltage between two probes of the two conduction region contrapositions electrically connecting, due to two conduction regions
Short circuit, tests the electric current between this two probes, and voltage with the ratio of electric current is：With the two conduction region contrapositions electrically connecting two
Contact resistance between individual probe.When this two probes are qualified, the contact resistance recording is less, sets this less contact resistance
Scope be expected resistance range.When actually measured contact resistance is beyond expected resistance range, then judge to should contact
Two probes of resistance are unqualified, are problem probe, follow-up need this problem probe is checked further, repair or more
Change.Therefore, using the probe card detection method of the present invention, can within a short period of time, easily determine probe mass.
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
With reference to Fig. 1, a wafer 100 is provided, multiple conduction regions 101 are distributed with wafer 100.Because the present embodiment will be examined
The probe card surveyed is used for subsequent wafer and tests, and therefore, described conduction region 101 can be qualified chip on wafer to be measured, be located at
Weld pad on chip or other conduction regions specially being made according to the qualified chip on wafer to be measured.These other
The size of conduction region, electric property etc. are all essentially identical with the chip on wafer to be measured, its object is to reduce the present embodiment
Error between test result and the test data of qualified chip.
With reference to Fig. 2, all two adjacent conduction regions 101 are electrically connected by wire 102, and any one conduction region is only
Electrically connect with a conduction region.In the present embodiment, all two adjacent conduction regions 101 are electrically connected by wire 102, this
Plant operation more convenient, and there is suitable succession, positioning probe can be easier.Secondly, any one conduction region
Electrically connect with a conduction region, be for avoiding the occurrence of the test number between two probes of the two conduction region contrapositions electrically connecting
According to for the data after serial or parallel connection between multiple conduction regions.If that is, any one conduction region and multiple conduction regions
Electrical connection, it may appear that conduction region situation in parallel or series, in such a case, causes the test between two probes recording
Data is inaccurate.
With reference to Fig. 3, after electrical connection, will be right with the conduction region 101 on wafer 100 for all probes 201 in probe card 200
Position, it should be noted that Fig. 3 does not show probe 201 and the conduction region 101 of all quantity, illustrate only four probes
With four conduction regions, here is only served description probe and is acted on the example of conduction region contraposition, is not intended to limit the protection model of the present invention
Enclose.
In general, contraposition refers to be aligned the probe in probe card one-to-one with the chip on wafer, contact
Operation is it is ensured that subsequent electrical signal is delivered to chip by probe.Specific in the present embodiment, first, for ensureing in probe card 200
Each probe 201 all have a conduction region 101 to align therewith, conduction region 101 quantity of the present embodiment is more than or equal to probe 201
Quantity.Secondly, the alignment operation of execution standard, and ignore the human factor and environmental factor shadow to probe card detecting step
Ring, the accuracy of guarantee test result.And, during contraposition, must have micro- between probe 201 and conduction region 101
The conflict of amount（Overdrive, referred to operation）So that probe pierces through（Or wiping stroke）Conduction region surface to be detected, to reach test
The purpose of conduction region electric property.
In a particular embodiment, after execution alignment operation, two spies that test is aligned with two conduction regions electrically connecting
Contact resistance between pin.Specifically, the contact resistance between test and two probes of the two conduction region contrapositions electrically connecting
Step be：Electric signal, this electric signal " distribution " to all probes are applied on probe card 200, is leading with two electrically connecting
Applied voltage V between two probes of electric area contraposition1；Then, record the electric current I between this two probes1, and then it is somebody's turn to do
Contact resistance R between two probes1=V1/I1.Contact in the case that probe is qualified, between two conduction regions of electrical connection
Resistance very little, the scope of this less contact resistance is substantially less than or equal to 10 Ω, sets this less contact resistance scope as in advance
Phase resistance range RY.If recording contact resistance R in a particular embodiment1Significantly increase and surpass the expectation resistance range RY, then tentatively
Judge to should contact resistance R1Probe unqualified.The problem that this unqualified probe is likely to occur is：
First, probe is too short or hardness is not so that probe cannot provide enough acupuncture treatment dynamics, probe tip and conduction
Area can not form effectively micro- conflict, and the pick-up current in turn resulting between two probes is less, the contact resistance finally recording
R1Increase；
Second, the syringe needle of probe relatively thick so that contact resistance R1Larger；
3rd, the position of probe can not be completely relative with the position realization of corresponding conduction region, and such as probe bending, is non-
Perpendicular to crystal column surface, cause the needle point of probe to deflect away from predetermined acupuncture treatment position, or even deflect away from conduction region, so can not with right
The conduction region answered forms and is accurately aimed at, contacts；
4th, the parameter such as the quality problem of probe itself, such as material, density goes wrong.
Compared with prior art, the probe card detection method of the present invention is simple to operate, be easily achieved, ultrahigh in efficiency.Use
The probe card detection method of the present invention, can navigate to the probe going wrong, the probe that subsequently can go wrong for this
Checked further, made the operation such as replacement, repairing for the probe that this goes wrong it is ensured that in formal wafer testing procedure
Test result accurate.
And, in test process, each probe and a corresponding conduction region electrically connect, can be to all of probe
Applied voltage is that is to say, that can be applied between all two probes with electrically connect two conduction region contrapositions simultaneously simultaneously
Making alive, then can obtain the corresponding contact resistance of each probe simultaneously.So detection can be completed in a relatively short time,
Improve detection efficiency.
In a particular embodiment, test above twice can also be carried out to all probes, and then each probe corresponding can
To obtain multiple contact resistance value；Then, the plurality of contact resistance value can be set up a statistical table, and respectively with expection
Resistance range RYIt is compared, judge whether probe is qualified finally according to corresponding statistics.So, each probe is carried out
Repeatedly test is it can be ensured that the test result of probe is accurate.
Implement such scheme, by the contact electricity between test and two probes of two conduction region contrapositions of electrical connection
Resistance, this contact resistance is compared with expected resistance range, and then whether preliminary judgement probe is qualified.In conjunction, also
The detection electric current between two probes of the two conduction region contrapositions not electrically connected can be tested, judge whether probe can be real
Now form one-to-one alignment with conduction region.
Specifically, with reference to Fig. 2, when two adjacent conduction regions are electrically connected, can also be in adjacent two not electrically connected
The both sides of individual conduction region 101, and two parallel wires 103 are set at this two conduction regions not electrically connected.
Then, with reference to Fig. 3, after the conduction region 101 on the probe 201 and wafer 100 in probe card 200 is aligned, survey
Obtain the detection electric current I between two probes of two conduction regions contrapositions and two parallel wires 103 betweenc.It is being embodied as
In example, applied voltage V between this two probes2, record the detection electric current I flowing through between two probesc.
In a particular embodiment, be considered as between two conduction regions not electrically connected disconnect, probe card qualified and with conduction
Area is formed when being accurately aimed at, contacting, and is considered as open circuit, then records between two probes of the two conduction region contrapositions not electrically connected
Detection electric current less, about in μ A to pA rank, set this less detection current range as predetermined current range IY.If recording
One detection electric current IcSignificantly increase and exceed predetermined current range IY, then two conduction regions that correspondence does not electrically connect are judged
Two probes are deflected away from conduction region 101 scope and are contacted with the wire 103 of both sides, cause short circuit between this two probes.According to this
Judge, draw to electric current I should be detectedcTwo probe locations can not with the position of two conduction regions realize completely relative to knot
By such as probe bending, deformation.Using the scheme of the present embodiment, can accurately judge whether probe can be formed with conduction region
One-to-one be aligned, reaches the accurate purpose judging probe problem.
In a particular embodiment, the scheme of testing contact resistance and test detection electric current is combined, if record corresponding to certain
The contact resistance R of probe1Beyond predetermined resistance scope RY, and detect electric current IcBeyond predetermined current range IY, this spy can be positioned
Pin produced problem is not enable to form one-to-one alignment with conduction region.In other embodiments, if the chip chi on wafer
Very little less, when probe is aligned with chip, compared to the chip of large-size, probe is easier to deflect away from this reduced size chip
Scope, therefore using the scheme of test detection electric current, can preferably detection probe whether can with conduction region formed one-to-one
Be aligned.
Finally, it should be noted that the present embodiment is to electrically connect two adjacent conduction regions, in other embodiments,
Non-conterminous any two conduction region can also be electrically connected.When implementing this scheme, need to set two electrically connecting not
Expected resistance range between adjacent conductive area, it is contemplated that the difference between the conduction region of each group electrical connection, therefore,
Using this technical scheme, even if being capable of testing goal, it is also to waste time and energy and operability is not high.Furthermore, it is contemplated that connecting
The conductor length of non-conterminous conduction region be more than connect adjacent conductive area conductor length, testing cost can be increased, and two not
Expected resistance range between adjacent conductive area can significantly increase, and in this case, test obtains the fluctuation range of data
, false retrieval, the probability of missing inspection increases, and finally makes testing result inaccurate in meeting very little.To sum up, the scheme of the present embodiment can be grasped
The property made is high and testing result is accurate.
In addition, in the present invention, the quantity of conduction region might be less that the quantity of probe, in this case, needs to carry out
Repeatedly measure, just can complete the detection to all probes.
Additionally, this invention is not limited to each specific embodiment described above, as long as meet at least two conduction regions being electrically connected
Connect and any one conduction region is only electrically connected with a conduction region, all can realize the purpose of the present invention.It is, if only two
It is necessary to repeatedly be tested during individual conduction region electrical connection, the detection to all probes just can be completed.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, without departing from this
In the spirit and scope of invention, all can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope limiting is defined.
Claims (9)
1. a kind of detection method of probe card is it is characterised in that include：
Wafer is provided, multiple conduction regions, at least two conduction region electrical connections and any one conduction region are distributed on described wafer
Only electrically connect with a conduction region；
Probe in described probe card is aligned with the conduction region on wafer；
Record the contact resistance between two probes of the two conduction region contrapositions electrically connecting；
If described contact resistance is located in expected resistance range, judge that two probes of corresponding described contact resistance are qualified；
The resistance range if described contact resistance surpasss the expectation, judges that two probes of corresponding described contact resistance are unqualified.
2. detection method as claimed in claim 1 is it is characterised in that also include：
In the both sides in the Liang Ge adjacent conductive area not electrically connected, and arrange at the described Liang Ge adjacent conductive area not electrically connected
Article two, parallel wire；
After by the conduction region contraposition on the probe in described probe card and wafer, record and described two conductions not electrically connected
Detection electric current between two probes of area's contraposition；
If described detection electric current be located at prospective current in the range of, judge correspondence described detection electric current two probes can with right
One-to-one be aligned should be formed by described two conduction regions detecting electric current；
If described detection electric current surpasss the expectation current range, judge correspondence described detection electric current two probes cannot with corresponding
Two conduction regions of described detection electric current form one-to-one be aligned.
3. detection method as claimed in claim 1 is it is characterised in that the quantity of described conduction region is more than or equal to described probe card
The quantity of upper probe.
4. detection method as claimed in claim 1 is it is characterised in that all adjacent two conduction regions electrical connections, and arbitrarily
One conduction region is only electrically connected with one of adjacent conduction region.
5. detection method as claimed in claim 2 is it is characterised in that also include：All two neighboring do not electrically connect lead
Electric area both sides, and two parallel wires are set at the described two neighboring conduction region not electrically connected.
6. the detection method as described in claim 1 or 4 is it is characterised in that record and the two conduction region contrapositions electrically connecting
The method of the contact resistance between two probes, including：
Applied voltage between two probes of the two conduction region contrapositions electrically connecting；
Test the electric current passing through between described two probes；
Described voltage is contact resistance with the ratio of electric current.
7. the detection method as described in claim 2 or 5 is it is characterised in that described record the conduction region not electrically connected with two
The method of the detection electric current between two probes of contraposition, including：
Applied voltage between two probes of described two conduction regions not electrically connected contraposition；
Test the detection electric current between described two probes.
8. detection method as claimed in claim 1 it is characterised in that to each probe test twice more than, each spy corresponding
Pin obtains multiple contact resistances.
9. detection method as claimed in claim 1 is it is characterised in that described conduction region includes chip and the weldering being located on chip
Pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310199768.1A CN103293503B (en) | 2013-05-24 | 2013-05-24 | Probe card detecting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310199768.1A CN103293503B (en) | 2013-05-24 | 2013-05-24 | Probe card detecting method |
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| Publication Number | Publication Date |
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| CN103293503A CN103293503A (en) | 2013-09-11 |
| CN103293503B true CN103293503B (en) | 2017-02-08 |
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|---|---|---|---|
| CN201310199768.1A Active CN103293503B (en) | 2013-05-24 | 2013-05-24 | Probe card detecting method |
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| TWI516786B (en) * | 2013-12-13 | 2016-01-11 | Mpi Corp | Detection and debugging of the system |
| KR102179245B1 (en) | 2014-03-19 | 2020-11-16 | 주식회사 아도반테스토 | Wafer for inspection and test system |
| CN104237823B (en) * | 2014-07-31 | 2017-04-12 | 上海华力微电子有限公司 | Method for effectively verifying probe card abnormality |
| CN104502874A (en) * | 2014-11-26 | 2015-04-08 | 上海华力微电子有限公司 | Method for effectively control diameter of probe in probe clamp |
| CN106154095B (en) * | 2015-03-31 | 2020-01-17 | 上海和辉光电有限公司 | Detection method of contact LTPS and bonding pad structure used for detection method |
| CN110501539A (en) * | 2019-08-23 | 2019-11-26 | 杰西·吕 | Equipment and its application method for probe card manufacture, detection and maintenance |
| CN111007319A (en) * | 2019-12-05 | 2020-04-14 | 上海华力集成电路制造有限公司 | Detection circuit and method for socket probe yield |
| JP7497629B2 (en) * | 2020-07-03 | 2024-06-11 | 富士電機株式会社 | Semiconductor chip testing device and testing method |
| CN113506755A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | Checking graph structure for automatically detecting test channel and test method |
| CN117665544B (en) * | 2024-02-01 | 2024-06-11 | 合肥晶合集成电路股份有限公司 | Wafer acceptance test method |
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| CN103293503A (en) | 2013-09-11 |
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