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CN103258955A - Encapsulation method of organic electronic device - Google Patents

Encapsulation method of organic electronic device Download PDF

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Publication number
CN103258955A
CN103258955A CN2012100404152A CN201210040415A CN103258955A CN 103258955 A CN103258955 A CN 103258955A CN 2012100404152 A CN2012100404152 A CN 2012100404152A CN 201210040415 A CN201210040415 A CN 201210040415A CN 103258955 A CN103258955 A CN 103258955A
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electronic device
organic
organic electronic
layer
film
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CN103258955B (en
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吴茹菲
刘键
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Abstract

Disclosed is a method of encapsulating an organic electronic device, comprising: before manufacturing an electronic device, depositing a multilayer composite film on the back of a substrate material; and after the electronic device is manufactured, depositing a multilayer composite film on the surface of the organic electronic device. The packaging method of the organic electronic device provided by the invention adopts a chip-level packaging method, integrates the packaging process into the device manufacturing process, and replaces the traditional mode of firstly manufacturing the device on a wafer and then independently packaging the device after cutting. The invention adopts organic/inorganic composite multilayer film package to isolate water and oxygen, thus greatly improving the service life of the organic electronic device, realizing flexible package and retaining the folding and bending performance of the organic electronic device to the maximum extent. Finally, the invention can realize film formation at low temperature below 120 ℃, and reduces the heat damage to devices and plastic substrates.

Description

The method for packing of organic electronic device
Technical field
The present invention relates to the Electronic Packaging field, particularly a kind of method for packing of organic electronic device.
Background technology
The organic optoelectronic device recent two decades develops rapidly, and organic light emission two machine pipes (OLED) especially have low, the frivolous series of advantages such as gentle of luminous efficiency height, operating voltage, and its correlation technique and industry obtain extensive concern.OLED shows that annual value of production surpasses 1,000,000,000 dollars at present, and product relates to TV, MP3, mobile phone, vehicle audio etc.The numerous and confused huge fund of tradition such as OSRAM, GE, Philips whole world illumination giant marches the OLED lighting field and began to release Related product in 2009, according to the NanoMarkets of professional institution market analysis address prediction, OLED shows and illumination market will reach 10,900,000,000 dollars in 2012, reaches 15,500,000,000 dollars in 2014.In China, in the Tenth Five-Year Plan (2001-2005) was listed the OLED Display Technique by the Department of Science and Technology in 2005; Again semiconductor lighting products such as OLED are clearly classified as in the National Program for Medium-to Long-term Scientific and Technological Development in 2006 " major fields and first develop theme ", company such as global, Shanghai heavenly steed of China's Visionox, Sichuan Changhong, SVA, Jilin has established the OLED production line one after another in recent years.
Aspect organic solar batteries (OPV), OPV is considered to and can realizes cheap electric energy with rational efficient and cheap cost, thereby becomes competitive third generation solar energy generation technology.The organic solar batteries energy conversion efficiency is the highest at present surpasses 8%, close on the extensive industrialization stage, European Union and the U.S. etc. all supports the research and development of organic solar batteries energetically, Heliatek, Solarmer, and many companies such as Plextronics have also begun the organic solar batteries of going into operation.Also pay much attention to the development of organic solar technology in China, and how tame school and research institute are arranged in the correlative study of being engaged in material and device.
Usually contain active metal electrode in OLED, OPV and the printing electronic device, the partial function material of device is also comparatively responsive to water oxygen, and water oxygen accelerates device aging by electrochemical reaction when device is worked, reduce device lifetime.Thereby above-mentioned device encapsulated, each functional layer of device and the steam in the atmosphere, oxygen composition are isolated, most important to improving device stability and working life.
Traditional rigidity OLED, the encapsulation of OPV device generally are to caps such as device usefulness epoxy resin cure glass in glove box, and be used in combination drying sheet encapsulation, yet the rigidity encapsulation can't be satisfied the encapsulation requirement of flexible device, and the water oxygen permeability of flexible plastic substrate itself also is higher than 10-5g/m 2/ day, this just requires that flexible substrate is carried out water oxygen and stops isolation processing.
Summary of the invention
The objective of the invention is, provide a kind of and have flexible structure and outstanding water oxygen permeation barrier performance is arranged, can reduce the method for packing to the organic electronic device of the damage of device and plastic.
The method for packing of a kind of organic electronic device provided by the invention comprises:
Before making electronic device, at backing material back side deposit multi-layer compound film;
After electronic device completes, at organic electronic device surface deposition multi-layer compound film.
Further, described multi-layer compound film comprises:
The stack layer that some layers of organic layer and inorganic layer replace;
Described organic layer is prepared from by organic polymer, is used for isolated water, oxygen;
Described inorganic layer is prepared from by inorganic matter, for increasing flexible, flexible, anti-fracture.
Further, described organic polymer comprises:
Parylene, polypropylene, polyacrylate or organosilicon commissure body polymer SiO xC yH z
Further, described inorganic matter comprises: SiN x, SiO y, TiO 2, Ta 2O 3Or aluminium.
Further, described is to adopt plasma reinforced chemical vapour deposition method growing film at the backing material back side and organic electronic device surface deposition multi-layer compound film, guarantee film formation at low temp, reduce the fire damage to electronic device and plastic as far as possible, film growth rate is moderate simultaneously.
Further, the temperature of described film formation at low temp is below 120 ℃.
The method for packing of a kind of organic electronic device provided by the invention adopts chip-scale packaging method, and encapsulation process is integrated in the device making technics process, has replaced elder generation in the past and has made device at wafer, and the cutting back is the mode of encapsulation separately.The benefit of doing like this is, raise the efficiency, reduce cost, the present invention has simultaneously adopted organic/inorganic composite multi-layer thin-film package with innovating, both can isolated water, oxygen, thereby greatly improve the useful life of organic electronic device, can realize flexible package again, at utmost remain with collapsible, the crooked performance of organic electronic device.At last, this invention can realize film formation at low temp below 120 ℃, has reduced the fire damage to device and plastic.
Description of drawings
Fig. 1 is the encapsulating structure schematic diagram of a kind of organic electronic device of providing of the embodiment of the invention.
Embodiment
As shown in Figure 1, operation and back two steps of operation before the method for packing of organic electronic device provided by the invention is divided into.
Preceding operation is before being manufactured with organic electronic device 2, at first at substrate 1 material back side deposit multi-layer compound film 3.Be deposited with multi-layer compound film 3 with plasma reinforced chemical vapour deposition method (hereinafter to be referred as the PECVD method).The stack layer that multi-layer compound film 3 is replaced by some layers of organic layer and inorganic layer.Organic layer is prepared from by organic polymer, comprising: Parylene, polypropylene, polyacrylate or organosilicon commissure body polymer SiO xC yH zBe used for isolated water, oxygen; Inorganic layer is inorganic matter, for increasing flexible, flexible, anti-fracture.Inorganic layer is prepared from by inorganic matter, comprising: SiN x, SiO y, TiO 2, Ta 2O 3Or aluminium.The stack layer that each organic matter layer and inorganic layer the replace use of can arranging in pairs or groups, as: polypropylene/aluminium, polyacrylate/aluminium, polypropylene/polypropylene acid fat/aluminium/polypropylene etc.Experiment showed, that the organic/inorganic composite bed has coordinating effect, than the better effects if of multiple organic layer repeatedly stacking isolated water, oxygen; The superiors of composite bed adopt organic substance, further improve isolated water, oxygen ability.The inorganic layer effectively block water oxygen infiltration of this organic-inorganic multi-layer film structure because containing fine and close free of pinholes, the thickness of single inorganic layer is in a hundred or so nanometer scale, all contain the hundreds of nanometer between the inorganic layer to the organic layer of number micron thickness, multi-layer compound film 3 structures generally contain the repetitive of 2-10 this organic layer/inorganic layer, and multi-layer compound film 3 still is flexible generally.The water oxygen blocking capability of this encapsulating film depends on the compactness extent of individual layer inoranic membrane, the repetitive number, and in addition, thereby the organic layer material can further increase water oxygen blocking capability to the repair of inoranic membrane defective and the passage that prolonged the infiltration of water oxygen.On the other hand, the selection of organic layer and inorganic layer materials will determine parameters such as the stress, adhesion between film and the film, thereby stability and anti-the rubbing around effect of encapsulating structure had material impact.
The PECVD method can realize fine and close free of pinholes film growth film, and deposition velocity can reach the hundreds of nm/minute.Compare the SiO of methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), high vacuum heat deposition, magnetron sputtering growth xOr SiN xFilm or second-rate, or need higher temperature, generally more than 150 ℃; Ald (ALD) system can prepare very fine and close inorganic layer, but the ALD system hypothermia speed of growth is extremely slow, as 80 ℃ of Al that grow down 2O 3Film, every growth 1 nanometer needs about 5 minutes.
Back operation is after organic electronic device 2 completes, at organic electronic device 2 surface deposition multi-layer compound films 3 encapsulated layers.Multi-layer compound film 3 structures are same as above.Afterwards, again wafer is cut into a plurality of individual chips.
The method for packing of a kind of organic electronic device provided by the invention adopts chip-scale packaging method, and encapsulation process is integrated in the device making technics process, has replaced elder generation in the past and has made device at wafer, and the cutting back is the mode of encapsulation separately.The benefit of doing like this is, raise the efficiency, reduce cost, the present invention has simultaneously adopted organic/inorganic composite multi-layer thin-film package with innovating, both can isolated water, oxygen, thereby greatly improve the useful life of organic electronic device, can realize flexible package again, at utmost remain with collapsible, the crooked performance of organic electronic device.At last, this invention can realize film formation at low temp below 120 ℃, has reduced the fire damage to device and plastic.
Above-described embodiment is preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spiritual essence of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.

Claims (6)

1. the method for packing of an organic electronic device is characterized in that, comprising:
Before making electronic device, at backing material back side deposit multi-layer compound film;
After electronic device completes, at organic electronic device surface deposition multi-layer compound film.
2. the method for packing of organic electronic device as claimed in claim 1 is characterized in that, described multi-layer compound film comprises:
The stack layer that some layers of organic layer and inorganic layer replace;
Described organic layer is prepared from by organic polymer, for increasing flexible, flexible, anti-fracture;
Described inorganic layer is prepared from by inorganic matter, is used for isolated water, oxygen.
3. the method for packing of organic electronic device as claimed in claim 2 is characterized in that, described organic polymer comprises:
Parylene, polypropylene, polyacrylate or organosilicon commissure body polymer SiO xC yH z
4. the method for packing of organic electronic device as claimed in claim 3 is characterized in that, described inorganic matter comprises:
SiN x, SiO y, TiO 2, Ta 2O 3Or aluminium.
5. the method for packing of organic electronic device as claimed in claim 1 is characterized in that:
Described is to adopt plasma reinforced chemical vapour deposition method growing film at the backing material back side and organic electronic device surface deposition multi-layer compound film, guarantee film formation at low temp, reduce the fire damage to electronic device and plastic, film growth rate is moderate simultaneously as far as possible.
6. the method for packing of organic electronic device as claimed in claim 5 is characterized in that:
The temperature of described film formation at low temp is below 120 ℃.
CN201210040415.2A 2012-02-20 2012-02-20 Encapsulation method of organic electronic device Expired - Fee Related CN103258955B (en)

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103715366A (en) * 2013-12-20 2014-04-09 京东方科技集团股份有限公司 OLED film packaging structure, OLED device and display apparatus
CN104752634A (en) * 2013-12-31 2015-07-01 中国科学院微电子研究所 Processing method of alternate structure thin film packaging layer interface
CN104752633A (en) * 2013-12-31 2015-07-01 中国科学院微电子研究所 Thin film packaging method
CN104900812A (en) * 2015-04-23 2015-09-09 京东方科技集团股份有限公司 Film packaging structure, manufacture method thereof and display device
WO2015158011A1 (en) * 2014-04-18 2015-10-22 深圳市华星光电技术有限公司 Oled component and manufacturing method therefor
CN105390621A (en) * 2014-08-21 2016-03-09 环球展览公司 Thin film permeation barrier system for substrates and devices and method of making the same
CN105514274A (en) * 2016-01-08 2016-04-20 中国计量学院 Organic semiconductor device thin film packaging technology based on lithium fluoride/polyvinyl alcohol alternative thin film
CN105789473A (en) * 2014-12-22 2016-07-20 昆山国显光电有限公司 Flexible substrate and preparation method thereof
WO2016180103A1 (en) * 2015-05-14 2016-11-17 京东方科技集团股份有限公司 Thin-film packaging structure, manufacturing method therefor, and display device
CN108666421A (en) * 2018-05-23 2018-10-16 京东方科技集团股份有限公司 Flexible substrates, organic electroluminescent LED display base plate and display device
CN110556399A (en) * 2018-05-31 2019-12-10 浙江清华柔性电子技术研究院 Transition device of flexible device, preparation method and flexible device pasting method
CN109279180B (en) * 2017-07-21 2020-06-16 深圳市中科先见医疗科技有限公司 Medical implant component with an encapsulation layer and method for encapsulating a medical implant component
CN112736201A (en) * 2020-12-30 2021-04-30 奕瑞影像科技(太仓)有限公司 Indirect flat panel detector and preparation method thereof

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CN1348609A (en) * 1999-04-28 2002-05-08 E·I·内穆尔杜邦公司 Flexible organic electronic device with improved resistance to oxygen and moisture degradation
CN1395323A (en) * 2001-07-03 2003-02-05 株式会社半导体能源研究所 Luminescent device, method and electronic equipment for manufacturing luminescent device
CN1622700A (en) * 2003-11-29 2005-06-01 三星Sdi株式会社 Organic electroluminescent devices
CN101128074A (en) * 2007-09-20 2008-02-20 清华大学 An organic EL part and its making method

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CN1348609A (en) * 1999-04-28 2002-05-08 E·I·内穆尔杜邦公司 Flexible organic electronic device with improved resistance to oxygen and moisture degradation
CN1317225A (en) * 1999-07-09 2001-10-10 材料研究及工程研究所 Laminates for encapsulating devices
CN1395323A (en) * 2001-07-03 2003-02-05 株式会社半导体能源研究所 Luminescent device, method and electronic equipment for manufacturing luminescent device
CN1622700A (en) * 2003-11-29 2005-06-01 三星Sdi株式会社 Organic electroluminescent devices
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Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9472784B2 (en) 2013-12-20 2016-10-18 Boe Technology Group Co., Ltd. Packaging structure for OLED having inorganic and organic films with moisture absorbent layers
CN103715366A (en) * 2013-12-20 2014-04-09 京东方科技集团股份有限公司 OLED film packaging structure, OLED device and display apparatus
CN104752634A (en) * 2013-12-31 2015-07-01 中国科学院微电子研究所 Processing method of alternate structure thin film packaging layer interface
CN104752633A (en) * 2013-12-31 2015-07-01 中国科学院微电子研究所 Thin film packaging method
WO2015158011A1 (en) * 2014-04-18 2015-10-22 深圳市华星光电技术有限公司 Oled component and manufacturing method therefor
KR20160028362A (en) * 2014-08-21 2016-03-11 유니버셜 디스플레이 코포레이션 Thin film permeation barrier system for substrates and devices and method of making the same
KR102321945B1 (en) * 2014-08-21 2021-11-04 유니버셜 디스플레이 코포레이션 Thin film permeation barrier system for substrates and devices and method of making the same
CN105390621A (en) * 2014-08-21 2016-03-09 环球展览公司 Thin film permeation barrier system for substrates and devices and method of making the same
CN111769206A (en) * 2014-08-21 2020-10-13 环球展览公司 Thin film permeation barrier system for substrates and devices and method of making the same
CN105789473B (en) * 2014-12-22 2018-11-09 昆山国显光电有限公司 Flexible substrate and preparation method thereof
CN105789473A (en) * 2014-12-22 2016-07-20 昆山国显光电有限公司 Flexible substrate and preparation method thereof
CN104900812A (en) * 2015-04-23 2015-09-09 京东方科技集团股份有限公司 Film packaging structure, manufacture method thereof and display device
US10090487B2 (en) 2015-04-23 2018-10-02 Boe Technology Group Co., Ltd. Thin film packaging structure, method for fabrication thereof and display device
WO2016180103A1 (en) * 2015-05-14 2016-11-17 京东方科技集团股份有限公司 Thin-film packaging structure, manufacturing method therefor, and display device
CN105514274B (en) * 2016-01-08 2019-10-01 中国计量学院 It is a kind of based on lithium fluoride/polyvinyl alcohol alternate thin films organic semiconductor device thin film encapsulation technology
CN105514274A (en) * 2016-01-08 2016-04-20 中国计量学院 Organic semiconductor device thin film packaging technology based on lithium fluoride/polyvinyl alcohol alternative thin film
CN109279180B (en) * 2017-07-21 2020-06-16 深圳市中科先见医疗科技有限公司 Medical implant component with an encapsulation layer and method for encapsulating a medical implant component
CN108666421A (en) * 2018-05-23 2018-10-16 京东方科技集团股份有限公司 Flexible substrates, organic electroluminescent LED display base plate and display device
CN110556399A (en) * 2018-05-31 2019-12-10 浙江清华柔性电子技术研究院 Transition device of flexible device, preparation method and flexible device pasting method
CN110556399B (en) * 2018-05-31 2020-10-27 浙江清华柔性电子技术研究院 Transition device of flexible device, preparation method and flexible device pasting method
CN112736201A (en) * 2020-12-30 2021-04-30 奕瑞影像科技(太仓)有限公司 Indirect flat panel detector and preparation method thereof

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