CN103242836B - Fluorophore and light emitting device - Google Patents
Fluorophore and light emitting device Download PDFInfo
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- CN103242836B CN103242836B CN201210487854.8A CN201210487854A CN103242836B CN 103242836 B CN103242836 B CN 103242836B CN 201210487854 A CN201210487854 A CN 201210487854A CN 103242836 B CN103242836 B CN 103242836B
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- fluorophore
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- 150000004767 nitrides Chemical class 0.000 claims abstract description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 21
- 238000002156 mixing Methods 0.000 abstract description 7
- 230000007774 longterm Effects 0.000 abstract description 4
- 238000009877 rendering Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- TVGGZXXPVMJCCL-UHFFFAOYSA-N [Si].[La] Chemical compound [Si].[La] TVGGZXXPVMJCCL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical class O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229920000995 Spectralon Polymers 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- FZTPSPNAZCIDGO-UHFFFAOYSA-N barium(2+);silicate Chemical compound [Ba+2].[Ba+2].[O-][Si]([O-])([O-])[O-] FZTPSPNAZCIDGO-UHFFFAOYSA-N 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0838—Aluminates; Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention provides a fluorophore and a light emitting device. The fluorophore has high luminance, good high-temperature characteristics, and long-term reliability. The light emitting device is a white light emitting device using the fluorophore. This fluorophore comprises an oxynitride fluorophore (A) having a peak wavelength of 585 nm to 604 nm inclusive and a fluorescence intensity of 185% to 210% inclusive, and a nitride fluorophore (B) having a peak wavelength of 645 nm to 655 nm inclusive. Provided are: said fluorophore having high luminance, good high-temperature characteristics, and long-term reliability, wherein the mixing proportion of each of the oxynitride fluorophore (A) and the nitride fluorophore (B) is from 4 mass% to 12 mass% inclusive, and the total mixing amount of the oxynitride fluorophore (A) and the nitride fluorophore (B) is from 10 mass% to 24 mass% inclusive; and a white light emitting device using said fluorophore.
Description
Technical field
The present invention relates to for LED(Light Emitting Diode, photodiode) fluor and use the light-emitting device of LED.
Background technology
As the fluor for white light emitting device, there is β to match the combination (see patent documentation 1) of grand and red light-emitting phosphor, also have combination to have the red light-emitting phosphor of special color coordinate and green-emitting phosphor body and the fluor (see patent documentation 2) that obtains.Have and use the nitride phosphor being called as CASN or SCASN as the technology (see documents 3) of red-emitting phosphors, and extensively popularize.This red-emitting phosphors distinguishes use according to purposes, when paying attention to color rendering, the fluor that the wavelength that use peak wavelength is about 630nm to 660nm is longer, when paying attention to brightness, the fluor that the wavelength that use peak wavelength is about 610nm to 630nm is shorter.In addition, both require high reliability, when namely at high temperature using or use for a long time, brightness declines few.
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2007-180483 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2008-166825 publication
Patent documentation 3: Japanese Unexamined Patent Publication 10-242513 publication
Summary of the invention
But, require a kind of red-emitting phosphors making color rendering and luminance balance.The object of the invention is to, provide a kind of red-emitting phosphors, this fluor, in order to improve color rendering, reliability and be mixed with the specific orange phosphor of specified proportion when not damaging reliability, also provides the white light emitting device using this fluor.
The present invention is a kind of fluor, and it has: the oxonitride phosphor (A) that peak wavelength is more than 585nm to below 604nm, fluorescence intensity is more than 185% to less than 210%; Peak wavelength is the nitride phosphor (B) of more than 645nm to below 655nm, the proportioning of fluor (A), (B) is respectively more than 4 quality % to below 12 quality %, and total combined amount of fluor (A), (B) is that more than 10 quality % are to below 24 quality %.
The preferred fluor of described fluor (A) for α match grand, fluor (B) is CASN.
From other viewpoints of the application, the present invention is a kind of light-emitting device, its LED having above-mentioned fluor and be equipped with this fluor in light-emitting area.
According to the present invention, can be provided in when not damaging reliability and make color rendering and luminance balance, and the fluor be improved, the white light emitting device using this fluor can also be provided.
Embodiment
The present invention is a kind of fluor, and it has: the oxonitride phosphor (A) that peak wavelength is more than 585nm to below 604nm, fluorescence intensity is more than 185% to less than 210%; Peak wavelength is the nitride phosphor (B) of more than 645nm to below 655nm, the proportioning of fluor (A), (B) is respectively more than 4 quality % to below 12 quality %, and total combined amount of fluor (A), (B) is that more than 10 quality % are to below 24 quality %.
The present invention, by mixing orange phosphor in red-emitting phosphors, improves visibility, improves brightness, and it is grand as orange phosphor to use α to match.α match is grand has high reliability, and luminous efficiency is high, so be a kind of material of peak value of red-emitting phosphors of applicable adjustment high reliability.The fluor that the peak wavelength particularly often used in red-emitting phosphors is about 650nm or 630nm and α match grand peak wavelength relatively, and when making it luminous being excited by blue light, the decay of luminescence that causes of interacting is lower, so, preferably both combination.As nitride phosphor, sometimes use peak wavelength to have the fluor at peak for 620nm or in more short wavelength region when paying attention to brightness, but in this case, long wavelength's composition is not enough, causes color rendering to decline.Therefore, even if be used alone the fluor that peak wavelength is 620nm, 630nm, 650nm, also cannot make color rendering and luminance balance, and the balance of color rendering and brightness can be realized by the red-emitting phosphors and α Sialon phosphor combining 650nm.
Make the peak wavelength of oxynitride fluor (A) be more than 585nm to below 604nm to be in order to when combining with the peak wavelength red-emitting phosphors (B) that is about 630nm, improve its visibility, reduce the decay interacting and cause simultaneously, thus suppress the reduction of luminous efficiency.The present inventor finds, if both peak wavelengths are too close, then the improvement effect of improvement effect, the i.e. brightness of the visibility of fluor (B) is diminished, if both peak wavelengths too away from, ratio for excited fluophor (B) in the luminescence of then fluor (A) uprises, and causes the luminous efficiency of fluor entirety to decline.
In the present invention, the present inventor also finds, the mixture ratio of fluor (A) and fluor (B) is applicable in the scope of 1:3 ~ 3:1, due to both combinations are used as red-emitting phosphors, so, because of the difference of fluor that additionally mixes and optimum value is different.In order to be excited the white light obtained as object by blue light, and combine with green-emitting phosphor and/or yellow fluorophor, but total combined amount of fluor (A) and fluor (B) is applicable in the scope of 10 quality % to 24 quality %.The respective combined amount of fluor (A), (B) is that more than 4 quality % are to below 12 quality %
In fluor of the present invention, the fluorescence intensity of oxynitride fluor (A) is made to be more than 185% to less than 210%, this is because its luminous efficiency is highest level in current obtainable oxynitride fluor.Make the peak wavelength of nitride phosphor (B) be more than 645nm to below 655nm to be because its colorrendering quality is excellent in now widely used nitride red fluor, to be applicable to combining with fluor (A).Oxynitride (A) and nitride (B) fluor all have high reliability, and reliability can not be subject to interactional impact, so both mixtures also have high reliability.
The fluorescence intensity of fluor be by the peak height of standard test specimen (YAG is specially the P46Y3 that Mitsubishi chemical Co., Ltd manufactures) as the relative value of 100%, and to represent with %.The spectrophotometer that the model using Co., Ltd. Hitachi High-Tech to manufacture is F-7000, as the determinator of fluorescence intensity, measuring method is as follows.
< measuring method >
1) sample configuration: fill in quartz colorimetric utensil and measure sample or standard test specimen, in determinator, alternately put sample, measure.About 3/4 of cuvette height is fills up to the relative tamped density of about 35%.
2) measure: with the optical excitation of 455nm, read the height of the peak-peak of 300nm to 800nm.Measure 5 times, cast out maximum value, minimum value, get the mean value of remaining 3 values.
The peak wavelength of fluor is the wavelength of the maximum strength when measuring fluorescence intensity.The MCPD-7000 moment multi-site determination system utilizing great mound electronics corporation to manufacture, and using the labsphere(Japan registration trade mark that HALMA Company manufactures) Spectralon standard reflecting plate (99%, 2.0 " × 2.0 ") carries out this mensuration as standard test specimen.Specifically, be the sample of 3mm at the central part φ 16mm filling thickness of oxidation aluminum slabstone, gently press with quartz plate, strike off, and be configured.With the optical excitation of 455nm, read the peak height of 300nm to 800nm, determine integrated intensity, obtain the width of the half At The Height of maximum value.Measure 5 times, cast out maximum value, minimum value, get the mean value of remaining 3 values.
The oxonitride phosphor that fluor (A) in the present invention is peak wavelength is more than 585nm to below 604nm, fluorescence intensity is more than 185% to less than 210%.Specifically, α type is had to match grand, more specifically, have the ALONBRIGHT(Japan registration trade mark of Deuki Kagaku Kogyo Co., Ltd) in YL-C180, YL-C190, YL-C200, YL-595a, YL-595A ', YL-595A, YL-595B, YL-600a, YL-600A ', YL-600A, YL-600B.Above-mentioned fluor is grand as current obtainable α type match, has high peak intensities, and is the fluorescent material in the past do not had.
The nitride phosphor of to be peak wavelength be more than the 645nm to below 655nm of the fluor (B) in the present invention.Specifically, have and be abbreviated as CASN and the fluor being called as カ ズ Application (CASN), more specifically, have the BR-101A of Mitsubishi chemical Co., Ltd; The ER6534(peak wavelength of Intematix company is 650nm); And the R6733(peak wavelength of Intematix company is 655nm).Following material can be mixed in the scope of addition being no more than this red-emitting phosphors: the ER6238(peak wavelength of Intematix company is 620nm), ER6436(peak wavelength is 630nm), ER6535(peak wavelength is 640nm); BR-102C, BR-102F(peak wavelength of Mitsubishi chemical Co., Ltd is 630nm), BR-102D(peak wavelength is 620nm).
Excite to utilize blue light and obtain white light, fluor (A) and (B) together use with green-emitting phosphor and/or yellow fluorophor, but in order to activate the characteristic of fluor of the present invention, the fluor of preferred high brightness, high reliability.Specifically, as green-emitting phosphor, there is the LuAG(Luetcium aluminum garnet that the β match having activated Eu is grand, activated Ce); As yellow fluorophor, have YAG(yttrium aluminum garnet), lanthanum silicon nitride (lanthanum silicon nitride, Mitsubishi chemical Co., Ltd, trade(brand)name BY-201A), can be the fluor after improveing using above-mentioned substance as basic structure.In addition, by adding with BOS(barium orthosilicate) be the silicic acid class fluor of basic structure, can color rendering be improved, but due to the poor reliability of silicic acid class fluor, so preferably its addition lower than fluor of the present invention.As long as can carry out equably mixing or be mixed to desired degree of mixing, the blending means of fluor (A) and (B) and other fluor suitably can be selected.For this blending means, prerequisite is not mixed into foreign material, or do not make shape, the granularity generation considerable change of fluor.
From other viewpoints of the application, the present invention is a kind of light-emitting device, its LED having above-mentioned fluor and be equipped with this fluor in light-emitting area.The fluor be mounted in the light-emitting area of LED is sealed by sealing element.As sealing element, there are resin and glass, as resin, have silicone resin.As LED, preferably according to the color of the light finally sent, emitting red light LED, blue-light-emitting LED, the LED that sends other color of light are suitably selected, when blue-light-emitting LED, preferably formed by gallium nitride based semi-conductor and peak wavelength is the LED of more than 440nm to below 460nm, more preferably peak wavelength is more than 445nm to below 455nm.The size of the luminescent part of LED be preferably 0.5mm square more than, for the size of LED chip, as long as have the area of above-mentioned luminescent part, can suitably select, and the size of LED chip is preferably 1.0mm × 0.5mm, is more preferably 1.2mm × 0.6mm.
Embodiment
Use table and comparative example are described in detail to embodiments of the invention.
[table 1]
Fluor shown in table 1 is fluor (A) in fluor of the present invention, (B) and other fluor.In the fluor (A) of table 1, P2, P3 and P4 are the fluor with peak wavelength in scope described in claim 1 and fluorescence intensity.In the fluor (B) of table 1, P7, P8 and P9 are the fluor of the peak wavelength had in scope described in claim 1.In addition, P10 to P12 is the example of other fluor that can mix with fluor (A), (B).
The ratio of above-mentioned fluor according to table 2 is mixed, obtains the fluor in embodiment, comparative example.
[table 2]
Be mixed with in the fluor of embodiment 1 4.0 quality % as the P3 fluor in the table 1 of fluor (A), 7.0 quality % as the P8 fluor in the table 1 of fluor (B) and 80.0 quality % as the P11 fluor in the table 1 of other fluor, 9.0 quality % as the P12 fluor in the table 1 of other fluor.In the composition of the fluor of table 2, the numerical value of P1 to P12 is quality %.When each fluor is mixed, mix in plastics bag with the total amount of 2.5g, and utilize revolution autorotation mixer (the Awatori Rentaro ARE-310(Japan registration trade mark of Co., Ltd. THINKY)), the mixture of gained is mixed together with 47.5g silicone resin (OE6656 of TORAY Dow Corning Co., Ltd.).A+b in table 2 be the proportioning of the embodiment of fluor (A) is set to a, the numerical value when proportioning of embodiment of fluor (B) is set to b.But b comprises P6 when the combined amount more than P8.
Place LED in the bottom of the encapsulation main body of matrix, after carrying out wire-bonded with the electrode on substrate, inject mixed fluor with microsyringe, thus fluor is carried on LED.After lift-launch, after making it harden at 120 DEG C, at 110 DEG C, implement the secondary hardening of 10 hours, and seal.The peak luminous wavelength of LED is 448nm, and employs the chip of 1.0mm × 0.5mm size.
Evaluation shown in his-and-hers watches 2 is described.
The preliminary evaluation of table 2 have employed the evaluation of color rendering.In the evaluation of color rendering, have employed color reproduction range, and represent with the area (%) of the NTSC specification ratio in chromaticity coordinates.The larger then color rendering of numeral is higher.Evaluate acceptance condition be more than 68%, there is when more than 70% excellent colorrendering quality, lower than 66% time, can say that colorrendering quality is poor.This is the condition adopted for general LED-TV.
The brightness of table 2 evaluates with light beam when 25 DEG C.Extract the measured value after being applied with the 100mA electric current of 10 minutes.The acceptance condition evaluated is more than 27.8lm.Because this value changes because of determinator and condition, so, in order to carry out relatively with embodiment, acceptance value is set as (lower value of embodiment) × 90%.
The hot properties of table 2 evaluates with the Decay Rate of light beam during relative to 25 DEG C.Light beam when measuring 50 DEG C, 100 DEG C, 150 DEG C, and using value when 25 DEG C as 100%.The acceptance condition evaluated is as follows: be more than 90% when being more than 95%, 150 DEG C when being more than 97%, 100 DEG C when 50 DEG C.Although this numerical value is not the prescribed value of Global Access, be considered to the benchmark of the luminous element of high reliability at present.
The long-term reliability of table 2 is the following pad value measured, namely, for 85 DEG C, place 500 hours and 2000 hours under the condition of 85%RH after take out and at room temperature carry out drying time light beam measure, the pad value of light beam when to obtain with initial value be 100%.The acceptance condition evaluated is be more than 96% when 500 hours, is more than 93% when 2000 hours.This is that the fluor of non-high reliability is beyond one's reach numerical value.
As shown in table 2, embodiments of the invention show better colorrendering quality, light beam value, and high temperature or hot and humid under preserve for a long time time the decay of light beam also smaller.
And the colorrendering quality of comparative example 1,2,3,5,6,8 of the present invention is poor, the light beam value of comparative example 4,7,9 is little.In addition, use the comparative example 1,2,4,6,7 of a large amount of silicates fluor, hot properties, long-term reliability are poor, obtain the LED that reliability is low, so, can not expect to be applied to the product such as TV or monitor.
Utilizability in industry
Fluor of the present invention is used for white light emitting device.White light emitting device of the present invention is used for backlight, means of illumination, telltale, the image display device of liquid crystal panel.
Claims (2)
1. a fluor, is characterized in that, has: the oxonitride phosphor (A) that peak wavelength is more than 585nm to below 604nm, fluorescence intensity is more than 185% to less than 210%; Peak wavelength is the nitride phosphor (B) of more than 645nm to below 655nm, wherein, the proportioning of fluor (A), (B) is respectively more than 4 quality % to below 12 quality %, and total combined amount of fluor (A), (B) is that more than 10 quality % are to below 24 quality %, fluor (A) for α match grand, fluor (B) is CASN.
2. a light-emitting device, is characterized in that, has fluor according to claim 1 and in light-emitting area, is equipped with the LED of described fluor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-026609 | 2012-02-09 | ||
| JP2012026609 | 2012-02-09 |
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| Publication Number | Publication Date |
|---|---|
| CN103242836A CN103242836A (en) | 2013-08-14 |
| CN103242836B true CN103242836B (en) | 2015-04-29 |
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| CN201210487854.8A Expired - Fee Related CN103242836B (en) | 2012-02-09 | 2012-11-26 | Fluorophore and light emitting device |
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| Country | Link |
|---|---|
| JP (1) | JP6083050B2 (en) |
| CN (1) | CN103242836B (en) |
| TW (1) | TWI454554B (en) |
| WO (1) | WO2013118335A1 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261512A (en) * | 2005-03-18 | 2006-09-28 | Fujikura Ltd | Light emitting device and lighting apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4207489B2 (en) * | 2002-08-06 | 2009-01-14 | 株式会社豊田中央研究所 | α-sialon phosphor |
| JP2007070445A (en) * | 2005-09-06 | 2007-03-22 | Sharp Corp | Light emitting device |
| JP2008019407A (en) * | 2006-06-12 | 2008-01-31 | Sharp Corp | Method for producing phosphor material, phosphor material, semiconductor light-emitting device and image-displaying device |
| DE102008038249A1 (en) * | 2008-08-18 | 2010-02-25 | Osram Gesellschaft mit beschränkter Haftung | alpha-sialon phosphor |
| US20120019127A1 (en) * | 2009-03-26 | 2012-01-26 | Naoto Hirosaki | Phosphor, method for producing same, light-emitting device, and image display apparatus |
| JP2011228344A (en) * | 2010-04-15 | 2011-11-10 | Hitachi Ltd | Led light-emitting device |
-
2012
- 2012-08-09 JP JP2013557359A patent/JP6083050B2/en not_active Expired - Fee Related
- 2012-08-09 WO PCT/JP2012/070398 patent/WO2013118335A1/en active Application Filing
- 2012-09-06 TW TW101132436A patent/TWI454554B/en not_active IP Right Cessation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261512A (en) * | 2005-03-18 | 2006-09-28 | Fujikura Ltd | Light emitting device and lighting apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013118335A1 (en) | 2013-08-15 |
| TWI454554B (en) | 2014-10-01 |
| CN103242836A (en) | 2013-08-14 |
| TW201333162A (en) | 2013-08-16 |
| JPWO2013118335A1 (en) | 2015-05-11 |
| JP6083050B2 (en) | 2017-02-22 |
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