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CN103219695B - A kind of over-current protection method and overcurrent protection ic chip package thereof - Google Patents

A kind of over-current protection method and overcurrent protection ic chip package thereof Download PDF

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Publication number
CN103219695B
CN103219695B CN201310172270.6A CN201310172270A CN103219695B CN 103219695 B CN103219695 B CN 103219695B CN 201310172270 A CN201310172270 A CN 201310172270A CN 103219695 B CN103219695 B CN 103219695B
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China
Prior art keywords
electronic device
signal
magneto sensor
packaging
base plate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310172270.6A
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Chinese (zh)
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CN103219695A (en
Inventor
景为平
文继伟
景一欧
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Nantong University
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Nantong University
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Priority to CN201310172270.6A priority Critical patent/CN103219695B/en
Publication of CN103219695A publication Critical patent/CN103219695A/en
Application granted granted Critical
Publication of CN103219695B publication Critical patent/CN103219695B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Semiconductor Integrated Circuits (AREA)
  • Hall/Mr Elements (AREA)

Abstract

The present invention relates to a kind of over-current protection method and overcurrent protection ic chip package thereof.Described method comprises, and adopts two magnetosensitive original papers; This two magnetosensitives original paper is placed in the conductor side of protected electronic device by different electric current respectively; Two magnetosensitive original papers will sense that the signal of telecommunication with difference inputs the input of a differential amplifier circuit respectively; The signal that this differential amplifier circuit exports is as the input signal of overload protection drive circuit.Described chip unit, comprise base plate for packaging, nation's alignment, protected electronic device and first, second two magnetosensitives original paper, described protected electronic device is placed on base plate for packaging, its pin causes corresponding pad by nation's alignment, and the first magnetosensitive original paper is fixed on the pad side or pin side that are connected with protected pin of electronic device; Second magnetosensitive original paper is placed in induced signal on base plate for packaging and is less than on other optional position of the first magnetosensitive original paper.Advantage is that induced signal produces not influential system, and can restraint speckle, and the signal detected is more accurate.

Description

A kind of over-current protection method and overcurrent protection ic chip package thereof
Technical field
The present invention relates to current protection technology, particularly relate to a kind of over-current protection method and overcurrent protection ic chip package thereof.
Background technology
Power electronic device abnormal operating state or be short-circuited situation time, overcurrent situations can occur, this overcurrent can make circuit cisco unity malfunction even can damage device.So the current foldback circuit of power electronic device is indispensable part in Circuits System.
Resistor current sensing or hall sensing etc. are usually adopted in traditional over-current protection method.Resistor current sensing connects corresponding resistance in circuit, and the electric current passed through by detecting this resistance realizes overcurrent protection.This over-current protection method, because increase corresponding resistance, makes gross power increase, larger to systematic influence.And the overcurrent protection of hall sensing is comparatively large by external environment influence, for ensureing that detection accuracy needs to add compensating circuit, thus add the complexity of current foldback circuit.
Summary of the invention
The object of the invention is to the deficiency overcoming above-mentioned prior art, provide a kind of on protected systematic function without impact and the overcurrent protection ic chip package of the succinct a kind of over-current protection method of circuit structure and correspondence thereof.Its concrete technical scheme is as follows:
Over-current protection method, comprises employing two magneto sensor; This two magneto sensor is placed in the conductor side of protected electronic device by different electric current respectively; The signal of telecommunication with difference sensed is inputted the input of a differential amplifier circuit by two magneto sensors respectively; The signal that this differential amplifier circuit exports is as the input signal of overload protection drive circuit.
Described over-current protection method designs further and is, the differential mode voltage gain of described differential amplifier circuit is 50 ~ 120dB, common-mode rejection ratio 80 ~ 140dB.
Described overcurrent protection ic chip package, comprise the base plate for packaging and nation's alignment that are provided with pad, characterized by further comprising protected electronic device and first, second two magneto sensor, described protected electronic device is placed on base plate for packaging, pin in this protected electronic device causes corresponding pad by nation's alignment, described first magneto sensor is fixed on the pad side be connected with described protected pin of electronic device, or described pin side; Second magneto sensor is placed in induced current on base plate for packaging and is less than on other optional position of the first magneto sensor.
Described overcurrent protection ic chip package designs further and is, described second magneto sensor is placed in induced current on base plate for packaging and is less than other pad of the first magneto sensor or the side of pin.
Described overcurrent protection ic chip package designs further and is, described magneto sensor is formed by one deck high-magnetostriction material that bonds between two-layer high-tension electricity material, and is drawn between an adjacent layer by wire, forms signal output part.
The present invention's magnetic-sensitive material sensing, the field signal produced by Ampereconductors is converted to the signal of telecommunication, and the generation not electric consumption of the signal of telecommunication is power free, thus not influential system gross power and circuit impedance, does not affect primary circuit performance; The passive signal of two-way, by differential amplification, can suppress various noise significantly, thus make the over-current signal that detects more precisely, reliable.
Accompanying drawing explanation
The closed-loop control block diagram that Fig. 1 overcurrent protection ic chip package and protected electronic device and overcurrent protection drive circuit are formed.
The structural representation of Fig. 2 overcurrent protection ic chip package.
In figure, the protected electronic device of 4-, 5-substrate, 6,6 '-pad, the 8, first magneto sensor, the 8 ' second magneto sensor 7-nation alignment.
Embodiment
Over-current protection method of the present invention is employing two magneto sensor; this two magneto sensor is placed in the conductor side of protected electronic device by different electric current respectively; the ac current signal sensed is inputted the input of a differential amplifier circuit by two magneto sensors respectively; the signal that this differential amplifier circuit exports is as the input signal of the corresponding drive circuit of overload protection; form closed-loop control, see Fig. 1.
Two magneto sensors in said method are formed by epoxy bond one deck high-magnetostriction material (as Terfenol-D) by between two-layer high-tension electricity material (as PMN-PT monocrystalline piezoelectric material), and drawn between an adjacent layer by wire, form signal output part, induced signal is drawn.The signal of being drawn by magneto sensor output is input in a differential amplifier circuit, and this differential amplifier circuit has good differential mode voltage gain, is generally 50 ~ 120dB, and higher common-mode rejection ratio, is generally 80 ~ 140dB.
Protected electronic device in said method and magneto sensor accessible site are in a circuit chip unit; as Fig. 2, this chip unit comprises the base plate for packaging 5 which is provided with pad 6, protected electronic device 4, first magneto sensor 8, second magneto sensor 8 ' and nation's alignment 7.Protected electronic device is chip or the circuit in system or circuit with larger current, such as: insulated gate gate transistors IGBT, intelligent power module, Switching Power Supply IC, big current voltage stabilizing IC, big current step-down IC and big current boosting IC etc.Protected electronic device 4 is placed on base plate for packaging 5, and the some pins in this protected electronic device have corresponding some nations alignment 7 to cause corresponding pad 6.Generally, two magneto-dependent sensors are placed at diverse location, first magneto sensor 8 is placed in the conductor pad side having big current and pass through, larger induced current can be produced, second magneto sensor 8 ' is placed on the optional position of encapsulation 5, makes the second magneto sensor 8 ' can only sense the even non-inductive electric current of less induced current.The present embodiment the second magneto sensor 8 ' is placed in the conductor pad 6 ' side having weak current and pass through.
During said chip cell operation; electric current on the relevant pins of protected electronic device 4 is transferred in conductor pad 6,6 ' by nation's alignment 7 respectively; this electric current produces magnetic field around pad; first, second magneto sensor detects the magnetic field around corresponding pad respectively; and then exporting the voltage signal of different value, the voltage signal then two-way detected with difference is input to the input of differential amplifier circuit.The interference bad border suffered in system due to two magneto-dependent sensors is identical, in differential amplifier circuit, all there is identical noise signal so be input to, after differential amplifier circuit, inhibit identical noise signal and common-mode signal, output be the amplifying signal of the field signal of required detection.By the field voltage signal feedback of amplifying in the corresponding drive circuit of overload protection, carry out the separating brake action of being correlated with, reach the function of overcurrent protection.

Claims (4)

1. an over-current protection method, is characterized in that comprising two magneto sensors adopting and formed by one deck high-magnetostriction material that bonds between two-layer high-tension electricity material, and is drawn between an adjacent layer by wire, form signal output part; This two magneto sensor is placed in the conductor side of protected electronic device by different electric current respectively; The signal of telecommunication with difference sensed is inputted the input of a differential amplifier circuit by two magneto sensors respectively; The signal that this differential amplifier circuit exports is as the input signal of overload protection drive circuit.
2. a kind of over-current protection method according to claim 1, is characterized in that the differential mode voltage gain of described differential amplifier circuit is 50 ~ 120dB, common-mode rejection ratio 80 ~ 140dB.
3. an overcurrent protection ic chip package, comprise the base plate for packaging and nation's alignment that are provided with pad, characterized by further comprising protected electronic device and first, second two magneto sensor, form signal output part, described protected electronic device is placed on base plate for packaging, pin in this protected electronic device causes corresponding pad by nation's alignment, and described first magneto sensor is fixed on the pad side be connected with described protected pin of electronic device, or described pin side; Second magneto sensor is placed in induced current on base plate for packaging and is less than on other optional position of the first magneto sensor; Described magneto sensor is formed by one deck high-magnetostriction material that bonds between two-layer high-tension electricity material, and is drawn between an adjacent layer by wire.
4. a kind of overcurrent protection ic chip package according to claim 3, is characterized in that described second magneto sensor is placed in induced current on base plate for packaging and is less than other pad of the first magneto sensor or the side of pin.
CN201310172270.6A 2013-05-10 2013-05-10 A kind of over-current protection method and overcurrent protection ic chip package thereof Expired - Fee Related CN103219695B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310172270.6A CN103219695B (en) 2013-05-10 2013-05-10 A kind of over-current protection method and overcurrent protection ic chip package thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310172270.6A CN103219695B (en) 2013-05-10 2013-05-10 A kind of over-current protection method and overcurrent protection ic chip package thereof

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CN103219695A CN103219695A (en) 2013-07-24
CN103219695B true CN103219695B (en) 2016-04-27

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110309574B (en) * 2019-06-25 2023-01-06 北京智涵芯宇科技有限公司 PUF circuit capable of sensing physical integrity of chip circuit and chip

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2472387Y (en) * 2001-03-08 2002-01-16 深圳市华夏磁电子技术开发有限公司 Protector for three phase motor
CN1865976A (en) * 2006-06-16 2006-11-22 清华大学 Large-area steel plate defect flux-leakage detection method
CN101539463A (en) * 2009-04-01 2009-09-23 邱召运 Hall difference equation force measuring method for symmetrical and complementary structure
CN201444169U (en) * 2009-06-27 2010-04-28 邱召运 Differential Hall unit
CN103018522A (en) * 2011-09-19 2013-04-03 株式会社电装 Current sensor and attachment structure of the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2472387Y (en) * 2001-03-08 2002-01-16 深圳市华夏磁电子技术开发有限公司 Protector for three phase motor
CN1865976A (en) * 2006-06-16 2006-11-22 清华大学 Large-area steel plate defect flux-leakage detection method
CN101539463A (en) * 2009-04-01 2009-09-23 邱召运 Hall difference equation force measuring method for symmetrical and complementary structure
CN201444169U (en) * 2009-06-27 2010-04-28 邱召运 Differential Hall unit
CN103018522A (en) * 2011-09-19 2013-04-03 株式会社电装 Current sensor and attachment structure of the same

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Granted publication date: 20160427

Termination date: 20190510