CN103140945B - 一种发光元器件及其制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000000919 ceramic Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000000470 constituent Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000001788 irregular Effects 0.000 abstract 2
- 239000002105 nanoparticle Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 238000004020 luminiscence type Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 and such as Substances 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 201000000490 flat ductal epithelial atypia Diseases 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001748 luminescence spectrum Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/18—Luminescent screens
- H01J29/20—Luminescent screens characterised by the luminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/18—Luminescent screens
- H01J29/28—Luminescent screens with protective, conductive or reflective layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
- H01J63/04—Vessels provided with luminescent coatings; Selection of materials for the coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/06—Lamps with luminescent screen excited by the ray or stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Abstract
提供一种发光器件及其制造方法。发光器件(10)包括发光衬底(13)和制备在发光衬底(13)表面并具有不规则排列的纳米颗粒结构的金属层(14),其中发光衬底(13)的材质为Y2O3:Eu的透明陶瓷(13)。通过在发光衬底上设置具有不规则排列的纳米颗粒结构的金属层,在阴极射线与发光衬底之间的界面形成表面等离子体,大大提高了发光效率。
Description
技术领域
本发明涉及发光材料领域,尤其涉及一种发光元器件。本发明还涉及一种发光元器件的制备方法。
背景技术
传统的作为发光基体的材料包括荧光粉、纳米晶体、发光玻璃及透明陶瓷等。透明陶瓷相对于其它发光材料而言具有其独特的优势,和发光玻璃相比,透明陶瓷具有更高的发光效率;和荧光粉、纳米晶体相比,透明陶瓷具有透明、机械强度高、化学稳定性好等特点,且其更容易被加工成各种大小形状的产品,如各种形状或尺寸的显示器件或照明光源。
例如,在真空微电子学领域中,场发射器件通常利用发光陶瓷作为发光体,其在照明及显示领域显示出了广阔的应用前景,引起国内外研究机构的广泛关注。场发射器件工作原理是:在真空环境下,阳极相对场发射阴极阵列(Fieldemissivearrays,FEAs)施加正向电压形成加速电场,阴极发射的电子加速轰向阳极板上的发光材料而发光。场发射器件的工作温度范围宽(-40℃~80℃)、响应时间短(小于1ms)、结构简单、省电,符合绿色环保要求。
然而,透明陶瓷在场发射器件中作为发光材料使用时,其存在发光效率低的问题。
发明内容
为了解决上述问题,本发明提供一种以化学组分Y2O3:Eu透明陶瓷为发光基体的发光元器件。
该发光元器件,包括发光基体,以及制备在发光基体表面并具有金属显微结构的金属层;所述发光基体的材质是化学组分为Y2O3:Eu的透明陶瓷。
在该发光元器件中,所述金属层的材质选自金、银、铝、铜、钛、铁、镍、钴、铬、铂、钯、镁或锌中的至少一种;该金属层的厚度可以为0.5纳米~200纳米。
本发明的另一目的在于提供上述发光元器件的制备方法,其制备流程如下:
步骤S1、清洗、干燥化学组分为Y2O3:Eu透明陶瓷的发光基体;
步骤S2、在所述发光基体表面制备一层金属层;
步骤S3、将制备有金属层的发光基体于真空状态下进行退火处理,冷却后,制得金属层中含有金属显微结构的发光器件。
上述制备方法的步骤S2中,述金属层的材质选自金、银、铝、铜、钛、铁、镍、钴、铬、铂、钯、镁或锌中的至少一种;该金属层的厚度可以为0.5纳米~200纳米。
上述制备方法的步骤S3中,所述退火处理包括如下过程:在50℃~650℃下,进行真空退火处理0.5~5小时,自然冷却至室温。
与现有技术相比,本发明具有如下优点:
1、本发明的发光元件,通过采用在发光基体上设置一层具有显微结构的金属层,该金属层能在阴极射线下与发光基体之间的界面形成表面等离子体,通过表面等离子体效应,使发光基体的内量子效率大大提高,即透明陶瓷的自发辐射增强,进而大大增强了发光基体的发光效率;
2、本发明的发光元件制备方法中,只需要在发光基体上形成一层金属层,然后经过退火处理制得金属显微结构,即可获得所需发光元件;因而,工艺制备简单、且成本低。
附图说明
图1为本发明发光元器件的结构示意图;
图2是本发明发光元器件制备工艺流程图;
图3是本发明发光元器件的发光流程图;
图4是实施例1的发光元件与未加金属层的透明陶瓷对比的发光光谱,阴极射线发光光谱测试条件为:电子束激发的加速电压为10KV。
具体实施例
本发明提供的一种发光元器件10,如图1所示,包括发光基体13,以及制备在发光基体13表面并具有金属显微结构的金属层14,所述金属显微结构是非周期性的,即由无规则排列的金属纳米颗粒构成;该发光基体13是Eu掺杂的Y2O3体系的具有发光性能的透明陶瓷,即发光陶瓷,通常为Eu掺杂的Y2O3体系透明陶瓷,其化学组分表示为Y2O3:Eu陶瓷。
对于该发光元器件10,其金属层14的材质可以是由化学稳定性良好的金属,例如金、银、铝、铜、钛、铁、镍、钴、铬、铂、钯、镁、锌中的至少一种金属形成的,优选为由金、银、铝中的至少一种金属形成的。金属层14中的金属物种可以是它们的单金属或者复合金属。复合金属可以是上述金属两种或两种以上的合金,例如,金属层14可以是银铝合金层或金铝合金层,其中银或金的重量分数优选为70%以上。金属层14的厚度为0.5纳米~200纳米,优选为1纳米~100纳米。
本发明还提供一种上述发光元器件的制备方法,如图2所示,其制备流程包括:
S01、将发光基体依次在丙酮、去离子水、无水乙醇清洗干净,然后进行烘干干燥或吹干干燥;
S02、在所述发光基体表面制备一层金属层;
S03、将制备有金属层的发光基体于真空状态下进行退火处理,冷却后,制得金属层中含有金属显微结构的发光器件。
上述制备方法的步骤S01中,发光基体采用Eu掺杂的Y2O3体系透明发光陶瓷,其化学组分为Y2O3:Eu;使用过程中,需将透明陶瓷通过机械加工、抛光等方式制成满足各种应用所需的形状,即为发光基体。
此处形成金属层可以是采用化学稳定性良好的金属材质源沉积形成,例如不易氧化腐蚀的金属,另外也可以是常用的金属,优选为金、银、铝、铜、钛、铁、镍、钴、铬、铂、钯、镁、锌中的至少一种金属,更优选为由金、银、铝中的至少一种金属。
上述制备方法的步骤S02中,该金属层是通过将上述至少一种金属通过物理或化学气相沉积法形成于发光基体表面,例如,溅射或蒸镀方法(但不限于这两种方法)形成于发光基体的表面。金属层的厚度为0.5纳米~200纳米,优选为1纳米~100纳米。
上述制备方法的步骤S03具体如下:在发光基体表面形成金属层后,在50℃~650℃下进行真空退火处理,退火时间为1~5小时,然后自然冷却至室温。其中,退火温度优选为100℃~500℃,退火时间优选为1~3小时。
如图1所示,上述发光元件10,可广泛应用于超高亮度和高速运作的发光器件上,例如场发射显示器、场发射光源或大型广告显示牌等产品中。以场发射显示器为例,阳极相对场发射阴极阵列施加正向电压形成加速电场,阴极发射的电子,即对金属层14发射阴极射线16,具有显微结构的金属层14与发光基体13之间形成表面等离子体,通过表面等离子体效应,使发光基体13的内量子效率大大提高,即透明陶瓷的自发辐射增强,进而大大增强了发光基体的发光效率,从而解决发光材料发光效率低这一问题。另外,由于是发光基体13表面形成一层金属层,整个金属层与发光基体13之间形成均匀界面,可以提高发光的均匀性。
作为本发明的发光元器件,在实际使用过程中,其发光方法如图3所示,包括如下流程:
S11:将发光元件的金属层所在的表面安装在阴极射线发射的正前方;
S12:对金属层发射阴极射线,在阴极射线的激发下,金属层与发光基体之间形成表面等离子体,使发光基体的发光增强。
在实际应用中,实现步骤S12可以采用场发射显示器或照明光源,在真空环境下,阳极相对场发射阴极阵列施加正向电压形成加速电场,阴极发射阴极射线,在阴极射线的激发下,电子束首先穿透金属层进而激发发光基体发光,在这个过程中,金属层与发光基体的界面上产生了表面等离子体效应,通过该效应使发光基体的内量子效率大大提高,即发光材料的自发辐射增强,进而大大增强了发光材料的发光效率。
如上所述电子束穿透金属层进而激发发光基体发光,表面等离子体在发光基体与金属层之间形成,促进Y2O3:Eu陶瓷的发光。
表面等离子体(SurfacePlasmon,SP)是一种沿金属和介质界面传播的波,其振幅随离开界面的距离而指数衰减。当改变金属表面结构时,表面等离子体激元(Surfaceplasmonpolaritons,SPPs)的性质、色散关系、激发模式、耦合效应等都将产生重大的变化。SPPs引发的电磁场,不仅仅能够限制光波在亚波长尺寸结构中传播,而且能够产生和操控从光频到微波波段的电磁辐射,实现对光传播的主动操控。因此,本实施例利用该SPPs的激发性能,增大发光基体的光学态密度和增强其自发辐射速率;而且,可利用表面等离子体的耦合效应,当发光基体发出光时,能与其发生耦合共振效应,从而大大提高发光基体的内量子效率,提高发光基体的发光效率。
下面结合附图,对本发明的较佳实施例作进一步详细说明。
实施例1
以Eu掺杂的Y2O3体系透明陶瓷片,即化学组分为Y2O3:Eu的发光陶瓷作为发光基体,然后利用磁控溅射设备在透明陶瓷表面沉积厚度为20纳米的金属银层,然后将其置于真空度小于1×10-3Pa的真空环境下,以300℃的温度退火处理半小时,然后冷却至室温,即得到具有金属显微结构金属层的发光元件。
对上述制备的发光元件进行光谱测试,用电子枪产生的阴极射线轰击该发光元件,电子束首先穿透金属层进而激发Y2O3:Eu透明陶瓷发光,产生如图4所示的发光光谱,图中光谱显示发光材料为绿色发光材料。图中曲线11为未加金属银层时陶瓷的发光光谱;曲线12为本实施例制备的附加了金属结构的发光元件的发光光谱,从图中可以看到,由于金属层与透明陶瓷之间产生了表面等离子体效应,相对于未加金属层时透明陶瓷,本实施例的附加了金属结构的透明陶瓷从450纳米到700纳米的发光积分强度是未加金属层时透明陶瓷发光积分强度的1.8倍,使发光性能得到极大提高。
实施例2
实施例2与实施例1之间的区别之处在于:在发光基体表面沉积厚度为200纳米的金属金层,然后将其置于真空度小于1×10-3Pa的真空环境下,以650℃的温度退火处理1小时,然后冷却至室温,得到具有金属显微结构金属层的发光元件。
实施例3
实施例3与实施例1之间的区别之处在于:在发光基体表面沉积厚度为0.5纳米的金属铝层,然后将其置于真空度小于1×10-3Pa的真空环境下,以50℃的温度退火处理5小时,然后冷却至室温,得到具有金属显微结构金属层的发光元件。
应当理解的是,上述针对本发明较佳实施例的表述较为详细,并不能因此而认为是对本发明专利保护范围的限制,本发明的专利保护范围应以所附权利要求为准。
Claims (10)
1.一种发光元器件,其特征在于,该发光元器件包括发光基体,以及制备在发光基体表面并具有金属显微结构的金属层;所述发光基体的材质是化学组分为Y2O3:Eu的透明陶瓷。
2.根据权利要求1所述的发光元器件,其特征在于,所述金属层的材质选自金、银、铝、铜、钛、铁、镍、钴、铬、铂、钯、镁或锌中的至少一种。
3.根据权利要求1所述的发光元器件,其特征在于,所述金属层的厚度为0.5纳米~200纳米。
4.一种发光元器件的制备方法,其特征在于,包括如下步骤:
步骤Sl、清洗、干燥发光基体;
步骤S2、在所述发光基体表面制备一层金属层;
步骤S3、将制备有金属层的发光基体于真空状态下进行退火处理,冷却后,制得金属层中含有金属显微结构的发光器件。
5.根据权利要求4所述的制备方法,其特征在于,所述步骤S1中,所述清洗处理包括如下过程:依次用丙酮、去离子水、无水乙醇清洗干净发光基体。
6.根据权利要求4所述的制备方法,其特征在于,所述干燥是烘干干燥或吹干干燥。
7.根据权利要求4所述的制备方法,其特征在于,所述步骤S1中,所述发光基体的材质是化学组分为Y2O3:Eu的透明陶瓷。
8.根据权利要求4所述的制备方法,其特征在于,所述步骤S2中,所述金属层的材质选自金、银、铝、铜、钛、铁、镍、钴、铬、铂、钯、镁或锌中的至少一种。
9.据权利要求4所述的制备方法,其特征在于,所述步骤S2中,所述金属层的厚度为0.5纳米~200纳米。
10.根据权利要求4所述的制备方法,其特征在于,所述步骤S3中,所述退火处理包括如下过程:
在50℃~650℃下,进行真空退火处理0.5~5小时,自然冷却至室温。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4604299A (en) * | 1983-06-09 | 1986-08-05 | Kollmorgen Technologies Corporation | Metallization of ceramics |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4340839A (en) * | 1978-12-27 | 1982-07-20 | Matsushita Electric Industrial Co., Ltd. | Zinc sulfide ceramic material and cathode ray tubes using the same |
GB8431838D0 (en) * | 1984-12-17 | 1985-01-30 | Secr Defence | Luminescent ceramic plates |
US5938872A (en) * | 1997-01-22 | 1999-08-17 | Industrial Technology Research Institute | Method for metallizing a phosphor layer |
JP2002100311A (ja) * | 2000-09-22 | 2002-04-05 | Toshiba Corp | 画像表示装置およびその製造方法 |
JP2003109487A (ja) * | 2001-09-28 | 2003-04-11 | Canon Inc | 電子励起発光体および画像表示装置 |
US20040101617A1 (en) * | 2001-11-27 | 2004-05-27 | Devi P Sujatha | Direct synthesis and deposition of luminescent films |
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WO2005105166A1 (en) * | 2004-05-04 | 2005-11-10 | Tibone Limited | A composite |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
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US7648834B2 (en) * | 2006-01-17 | 2010-01-19 | Moore Wayne E | Plasmon fluorescence augmentation for chemical and biological testing apparatus |
DE102006037730A1 (de) * | 2006-08-11 | 2008-02-14 | Merck Patent Gmbh | LED-Konversionsleuchtstoffe in Form von keramischen Körpern |
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US20110260602A1 (en) * | 2008-12-22 | 2011-10-27 | Korea Advanced Institute Of Science And Technology | Ac-plasma display devices using metal nanoparticles or nanostructures and method for manufacturing the same |
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CN201576698U (zh) * | 2010-01-22 | 2010-09-08 | 中国科学院上海硅酸盐研究所 | 一种透明陶瓷白光led器件 |
US20130175918A1 (en) * | 2010-09-26 | 2013-07-11 | Ocean's King Lighting Science & Technology Co, Ltd | Field emission anode plate, field emission light source and manufacturing method for light source |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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