CN103096699A - Electromagnetic shielding method and product - Google Patents
Electromagnetic shielding method and product Download PDFInfo
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- CN103096699A CN103096699A CN2011103373151A CN201110337315A CN103096699A CN 103096699 A CN103096699 A CN 103096699A CN 2011103373151 A CN2011103373151 A CN 2011103373151A CN 201110337315 A CN201110337315 A CN 201110337315A CN 103096699 A CN103096699 A CN 103096699A
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Abstract
The invention provides an electromagnetic shielding method. The method includes the following steps: a. providing a substrate, b. coating an insulating layer which is a fluorine-containing silica layer or a silica layer or a fluorine doped silica layer with the method of chemical vapor deposition under the reaction temperature of 20-50 deg c, c. coating a chromium layer on the insulating layer at room temperature with the method of vacuum coating by using chromium target as a target material, d. coating a copper layer on the chromium layer at room temperature with the method of vacuum coating by using copper target as a target material, e. coating a protective layer which is a chromium layer or a stainless steel layer or a nickel-chrome layer on the copper layer at room temperature with the method of vacuum coating by using any one of the chromium target, a stainless steel target and a nickel-chrome target as a target material. The invention further provides a product made with the electromagnetic shielding method.
Description
Technical field
The present invention relates to a kind of electromagnetic shielding method and goods thereof.
Background technology
Prior art usually adopts metal housing, deposits plastics composite shield cover metal level or that be combined with sheet metal or the metallic fiber composite shield cover is controlled electromagnetic interference.Yet, all there is following shortcoming in above-mentioned radome: institute takes up space greatly, production cost is higher, be difficult to realize seamless installation between radome and printed circuit board (PCB) (PCB) or flexible circuit board (FPC) when installing, so cause shield effectiveness low, the heat that electronic component on pcb board or FPC plate produces is difficult to distribute, and make the electronic component service behaviour unstable, even damage electronic component.
Direct precipitation resin insulating barrier on pcb board or FPC plate, then electroplate or the chemical plating metal layer on this insulating barrier, can realize electromagnetic shielding.But, in order to guarantee between this resin insulating barrier and pcb board or FPC plate, good adhesion is arranged, avoid insulating barrier to peel off or the phenomenon such as be full of cracks, the viscosity number of the resin that uses there is strict restriction.Be only limited to some special organic resin and can satisfy the resin that above-mentioned viscosity requires, these special organic resin compositions are many, complex structure, be difficult to manufacturing.In addition, the thickness of this insulating barrier is large (being difficult to be controlled at Nano grade), thereby there is harmful effect in the heat radiation of electronic component.In addition, plating or chemical plating metal layer are larger to the pollution of environment.
Summary of the invention
Given this, the invention provides a kind of electromagnetic shielding method.
In addition, the present invention also provides a kind of goods that make via above-mentioned electromagnetic shielding method.
A kind of goods, comprise that matrix reaches an insulating barrier, conductive layer and the overcoat that is formed at successively on this matrix, this insulating barrier is fluorinated silicon dioxide layer, silicon dioxide layer or fluorine silicon oxide layer, this conductive layer comprises chromium layer and the copper layer that is formed at successively on described insulating barrier, and described overcoat is chromium layer, stainless steel layer or nichrome layer.
A kind of electromagnetic shielding method, it comprises the steps:
Matrix is provided;
Adopting chemical vapour deposition technique, is under 20 ~ 50 ℃ in reaction temperature, forms an insulating barrier on matrix, and this insulating barrier is fluorinated silicon dioxide layer, silicon dioxide layer or fluorine silicon oxide layer;
Adopt Vacuum Coating method, at room temperature, take the chromium target as target, form a chromium layer on this insulating barrier;
Adopt Vacuum Coating method, at room temperature, take the copper target as target, form a bronze medal layer on this chromium layer;
Adopt Vacuum Coating method, at room temperature, any one in chromium target, stainless steel target and the nichrome target forms an overcoat as target on this copper layer, and described overcoat is chromium layer, stainless steel layer or nichrome layer.
Because chemical gaseous phase depositing process has well in the plating performance, make place, insulating barrier plane, recess and crease place deposition evenly, and can accomplish and the matrix seamless combination, improved the capability of electromagnetic shielding of matrix.
Described overcoat has higher hardness, makes described goods be difficult for being affected its capability of electromagnetic shielding by scratch in the processes such as assembling, use.In addition, the thickness of described insulating barrier, conductive layer and the overcoat that forms by said method is less, and the heat that electronic component is produced distributes fast, improves the thermal diffusivity of goods, and then has improved the stability of electronic component performance.On the other hand, the shared space of this insulating barrier and conductive layer is little, and quality is light.In addition, have good adhesion between insulating barrier, conductive layer and the overcoat that forms with vacuum coating method and matrix, electronic component, can avoid this insulating barrier in use and/or conductive layer to peel off or chap and reduce the capability of electromagnetic shielding of goods.
Description of drawings
Fig. 1 is the cutaway view of a preferred embodiment of the present invention goods.
Fig. 2 is the schematic diagram of a preferred embodiment of the present invention vacuum coating equipment.
The main element symbol description
| Goods | 10 |
| |
11 |
| Electronic component | 112 |
| Insulating barrier | 13 |
| Conductive layer | 15 |
| The chromium layer | 151 |
| The copper layer | 153 |
| Overcoat | 17 |
| |
20 |
| |
21 |
| |
30 |
| The |
23 |
| The |
24 |
| The |
25 |
| |
26 |
| The source of the |
27 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
See also Fig. 1, the present invention's one better embodiment electromagnetic shielding method mainly comprises the steps:
One matrix 11 is provided, and this matrix 11 can be printed circuit board (PCB) or flexible circuit board, also can be the housing of the portable type electronic products such as mobile phone, digital camera and notebook computer.When described matrix 11 is printed circuit board (PCB) or flexible circuit board, be formed with at least one electronic component 112 on described matrix 11.
Adopt the ion wind gun (not shown) that described matrix 11 surfaces are cleaned.
Adopt chemical vapour deposition technique, at the matrix 11 1 surface formation insulating barriers 13 after above-mentioned processing.In the present embodiment, described insulating barrier 13 is fluorinated silicon dioxide (F
2Si
2O
3) layer.In order to concrete operation method and the technological parameter that forms this insulating barrier 13 be: a rpcvd device (not shown) is provided, this rpcvd device comprises a settling chamber and bubbler, matrix 11 is placed in described settling chamber, take fluorine chromium triethoxysilane and pure water as reactant, described reactant enters described settling chamber after by described bubbler gasification; The pressure that reative cell is set is 600 ~ 800Pa; Take nitrogen as working gas, the flow of nitrogen is 50 ~ 80sscm; The temperature of settling chamber is 20 ~ 50 ℃; Sedimentation time 80 ~ 120min.Wherein, the mass ratio of fluorine chromium triethoxysilane and pure water is 3:1 ~ 2:1.The thickness of described insulating barrier 13 is 2 ~ 6 μ m.
Adopt magnetron sputtering method, form conductive layer 15 on described insulating barrier 13.Described conductive layer 15 comprises chromium (Cr) layer 151 that is formed at successively on described insulating barrier 13, and copper (Cu) layer 153.Forming described conductive layer 15 comprises the steps:
In conjunction with consulting Fig. 2, a vacuum coating equipment 20 is provided, this vacuum coating equipment 20 comprises a coating chamber 21 and is connected in a vacuum pump 30 of coating chamber 21, vacuum pump 30 is in order to vacuumize coating chamber 21.2 the 3rd targets 25 that are provided with pivoted frame (not shown), 2 first targets 23 that are oppositely arranged, 2 second targets 24 that are oppositely arranged in this coating chamber 21 and are oppositely arranged.Pivoted frame band kinetoplast 11 is along 26 revolution of circular track, and matrix 11 also rotation along track 26 revolution the time.The two ends of each first target 23, each the second target 24 and each the 3rd target 25 are equipped with source of the gas passage 27, and gas enters in described coating chamber 21 through this source of the gas passage 27.Wherein, described the first target 23 is the chromium target; Described the second target 24 is the copper target; Described the 3rd target 25 is any one in chromium target, stainless steel target and nichrome target.When the 3rd target 25 was the nichrome target, in described the 3rd target 25, the quality percentage composition of Ni was 50 ~ 80%.
Adopt magnetron sputtering method, form a chromium layer 151 on described insulating barrier 13.The concrete operation method and the technological parameter that form chromium layer 151 are: described matrix 11 is fixed on the pivoted frame in the coating chamber 21 of vacuum coating equipment 20, this coating chamber 21 is evacuated to 8.0 * 10
-3The Pa left and right, then pass into the argon gas (purity is 99.999%) that flow is about 100sccm (standard state ml/min) ~ 180sscm in coating chamber 21, and apply-20 ~-50V be biased in matrix 11, the power that the first target 23 is set is 5 ~ 10kW; The temperature of described coating chamber 21 is room temperature, and the plated film time can be 5 ~ 10min.After this chromium layer 151 is completed in sputter, close the power supply of described the first target 23.The thickness of described chromium layer 151 is 100 ~ 200nm.
When described matrix 11 was printed circuit board (PCB) or flexible circuit board, described insulating barrier 13 was deposited on the surface of described electronic component 112 and the surface of matrix 11, so that electronic component 112 is closed in described insulating barrier 13.
Adopt magnetron sputtering method, form a bronze medal layer 153 on described chromium layer 151.The concrete operation method and the technological parameter that form chromium layer 151 are: open the second target 24, it is 5 ~ 10kw that its power is set; Take argon gas as working gas, argon flow amount is 100 ~ 180sccm; During sputter to matrix 11 apply-20 ~-bias voltage of 50V, the temperature of described coating chamber 21 is room temperature, the plated film time can be 10 ~ 25min.After this copper layer 153 is completed in sputter, close the power supply of described the second target 24.The thickness of described copper layer 153 is 300 ~ 500nm.
Adopt magnetron sputtering method, form an overcoat 17 on described copper layer 153.Described overcoat 17 is chromium layer, stainless steel layer or nichrome layer.The concrete operation method and the technological parameter that form overcoat 17 are: open the 3rd target 25, it is 5 ~ 10kw that its power is set; Take argon gas as working gas, argon flow amount is 100 ~ 180sccm; During sputter to matrix 11 apply-20 ~-bias voltage of 50V, the temperature of described coating chamber 21 is room temperature, the plated film time can be 10 ~ 15min.After this overcoat 17 is completed in sputter, close the power supply of back bias voltage and the 3rd target 25.The thickness of described overcoat 17 is 200 ~ 300nm.
Understandable, if only need carry out electromagnetic shielding when processing to the subregion of matrix 11, can adopt and cover the tool (not shown) zone that does not need electromagnetic shielding is covered.
Understandable, described conductive layer 15 also can form by modes such as vacuum evaporation and arc ion platings.
Understandable, described insulating barrier 13 also can be the silica (SiO that forms by chemical vapour deposition (CVD) at normal temperatures
2) layer, fluorine silica (SiOF) layer or other insulating barriers.
Described electromagnetic shielding method simple and fast, almost there is no an environmental pollution, and form the material of this insulating barrier 13 simple, be easy to obtain.
A kind of goods 10 that make via above-mentioned electromagnetic shielding method comprise a matrix 11, are formed at insulating barrier 13, conductive layer 15 and overcoat 17 on this matrix 11 successively.
Described matrix 11 is printed circuit board (PCB) or flexible circuit board, also can be the housing of the portable type electronic products such as mobile phone, digital camera and notebook computer.
When described matrix 11 is printed circuit board (PCB) or flexible circuit board, be formed with at least one electronic component 112 on described matrix 11.Described insulating barrier 13 is deposited on the surface of described electronic component 112 and the surface of matrix 11, so that electronic component 112 is closed in described insulating barrier 13.
Described insulating barrier 13 is fluorinated silicon dioxide layer, silicon dioxide layer, fluorine silicon oxide layer or other insulating barriers.The thickness of this insulating barrier 13 is 2 ~ 6 μ m.
Described conductive layer 15 comprises chromium layer 151 and the copper layer 153 that is formed at successively on described insulating barrier 13.The thickness of this conductive layer 15 is to cover described insulating barrier fully as good.In the present embodiment, the thickness of described chromium layer 151 is 100 ~ 200nm.The thickness of described copper layer 153 is 300 ~ 500nm.
Described overcoat 17 is chromium layer, stainless steel layer or nichrome layer.The thickness of described overcoat 17 is 200 ~ 300nm.
Described chemical vapour deposition (CVD) and magnetron sputtering deposition all carry out at lower temperature, so can avoid the electronic component 112 on matrix 11 to damage because of high-temperature process.Because chemical gaseous phase depositing process has well in the plating performance, make insulating barrier 13 places, plane, recess and crease place deposition evenly, and can accomplish and matrix 11 seamless combination, can improve the capability of electromagnetic shielding of matrix 11.
Described overcoat 17 has higher hardness, makes described goods 10 be difficult for being affected its capability of electromagnetic shielding by scratch in the processes such as assembling, use.In addition, the thickness of described insulating barrier 13, conductive layer 15 and the overcoat 17 that forms by said method is less, the heat that electronic component 112 is produced distributes fast, improves the thermal diffusivity of goods 10, and then has improved the stability of electronic component 112 performances.On the other hand, the shared space of this insulating barrier 13 and conductive layer 15 is little, and quality is light.In addition, have good adhesion between insulating barrier 13, conductive layer 15 and the overcoat 17 that forms with vacuum coating method and matrix 11, electronic component 112, can avoid this insulating barrier 13 in use and/or conductive layer 15 to peel off or chap and reduce the capability of electromagnetic shielding of goods 10.
Claims (13)
1. goods, comprise matrix, it is characterized in that: these goods also comprise an insulating barrier, conductive layer and the overcoat that is formed at successively on this matrix, this insulating barrier is fluorinated silicon dioxide layer, silicon dioxide layer or fluorine silicon oxide layer, this conductive layer comprises chromium layer and the copper layer that is formed at successively on described insulating barrier, and described overcoat is chromium layer, stainless steel layer or nichrome layer.
2. goods as claimed in claim 1, it is characterized in that: this insulating barrier forms by the mode of chemical vapour deposition (CVD).
3. goods as claimed in claim 1, it is characterized in that: the thickness of this insulating barrier is 2 ~ 6 μ m.
4. goods as claimed in claim 1, it is characterized in that: the thickness of described chromium layer is 100 ~ 200nm.
5. goods as claimed in claim 1, it is characterized in that: the thickness of described copper layer is 300 ~ 500nm.
6. goods as claimed in claim 1, it is characterized in that: the thickness of described overcoat is 200 ~ 300nm.
7. goods as claimed in claim 1, it is characterized in that: this matrix is printed circuit board (PCB) or flexible circuit board.
8. goods as claimed in claim 7 is characterized in that: be formed with at least one electronic component on this matrix, described insulating barrier and described conductive layer deposition are on the surface of described electronic component and the surface of matrix, so that electronic component is closed in described insulating barrier.
9. electromagnetic shielding method, it comprises the steps:
Matrix is provided;
Adopting chemical vapour deposition technique, is under 20 ~ 50 ℃ in reaction temperature, forms an insulating barrier on matrix, and this insulating barrier is fluorinated silicon dioxide layer, silicon dioxide layer or fluorine silicon oxide layer;
Adopt Vacuum Coating method, at room temperature, take the chromium target as target, form a chromium layer on this insulating barrier;
Adopt Vacuum Coating method, at room temperature, take the copper target as target, form a bronze medal layer on this chromium layer;
Adopt Vacuum Coating method, at room temperature, any one in chromium target, stainless steel target and the nichrome target forms an overcoat as target on this copper layer, and described overcoat is chromium layer, stainless steel layer or nichrome layer.
10. electromagnetic shielding method as claimed in claim 9, it is characterized in that: when described insulating barrier is the fluorinated silicon dioxide layer, the method that forms described insulating barrier is: a rpcvd device is provided, this rpcvd device comprises a settling chamber and bubbler, matrix is placed in described settling chamber, take fluorine chromium triethoxysilane and pure water as reactant, described reactant enters described settling chamber after by described bubbler gasification; The pressure that reative cell is set is 600 ~ 800Pa; Take nitrogen as working gas, the flow of nitrogen is 50 ~ 80sscm, and the temperature of settling chamber is 20 ~ 50 ℃, sedimentation time 80 ~ 120min; Wherein, the mass ratio of fluorine chromium triethoxysilane and pure water is 3:1 ~ 2:1.
11. electromagnetic shielding method as claimed in claim 9, it is characterized in that: the method that forms the chromium layer is: adopt magnetron sputtering method, take argon gas as reacting gas, the flow that argon gas is set is 100sccm ~ 180sscm, the bias voltage that puts on matrix is-20 ~-50V, the power that chromium target is set is 5 ~ 10kW; The plated film time is 5 ~ 10min.
12. electromagnetic shielding method as claimed in claim 9, it is characterized in that: the method that forms the copper layer is: adopt magnetron sputtering method, take argon gas as reacting gas, the flow that argon gas is set is 100sccm ~ 180sscm, the bias voltage that puts on matrix is-20 ~-50V, the power that the copper target is set is 5 ~ 10kW; The plated film time is 10 ~ 15min.
13. electromagnetic shielding method as claimed in claim 9, it is characterized in that: the method that forms overcoat is: adopt magnetron sputtering method, take argon gas as reacting gas, the flow that argon gas is set is 100sccm ~ 180sscm, the bias voltage that puts on matrix is-20 ~-50V, the power that chromium target, stainless steel target and nichrome target are set is 5 ~ 10kW; The plated film time is 10 ~ 15min.
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| CN2011103373151A CN103096699A (en) | 2011-10-31 | 2011-10-31 | Electromagnetic shielding method and product |
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| CN2011103373151A CN103096699A (en) | 2011-10-31 | 2011-10-31 | Electromagnetic shielding method and product |
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| CN103096699A true CN103096699A (en) | 2013-05-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109041561A (en) * | 2018-08-28 | 2018-12-18 | 中国人民解放军海军航空大学青岛校区 | A kind of electromagnetic shielding method of technique for aircraft composite covering |
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| US20020166681A1 (en) * | 2001-03-19 | 2002-11-14 | Mazurkiewicz Paul H. | Board-level conformal EMI shield having an electrically-conductive polymer coating over a thermally-conductive dielectric coating |
| CN1535110A (en) * | 2003-03-29 | 2004-10-06 | 鸿富锦精密工业（深圳）有限公司 | Manufacturing method of antielectromagnetic interference shielding cover |
| CN101175394A (en) * | 2006-10-31 | 2008-05-07 | 比亚迪股份有限公司 | Anti-electromagnetic interference multilayer composite material and method for producing the same |
| CN101415318A (en) * | 2007-10-19 | 2009-04-22 | 鸿富锦精密工业（深圳）有限公司 | Wireless communication apparatus and electromagnetic shielding device thereof |
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2011
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Patent Citations (5)
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| CN1306387A (en) * | 2000-01-20 | 2001-08-01 | 柏腾科技股份有限公司 | Method for generating electromagnetic wave interference shielding membrane |
| US20020166681A1 (en) * | 2001-03-19 | 2002-11-14 | Mazurkiewicz Paul H. | Board-level conformal EMI shield having an electrically-conductive polymer coating over a thermally-conductive dielectric coating |
| CN1535110A (en) * | 2003-03-29 | 2004-10-06 | 鸿富锦精密工业（深圳）有限公司 | Manufacturing method of antielectromagnetic interference shielding cover |
| CN101175394A (en) * | 2006-10-31 | 2008-05-07 | 比亚迪股份有限公司 | Anti-electromagnetic interference multilayer composite material and method for producing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109041561A (en) * | 2018-08-28 | 2018-12-18 | 中国人民解放军海军航空大学青岛校区 | A kind of electromagnetic shielding method of technique for aircraft composite covering |
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Application publication date: 20130508 |