CN102983085A - Packaging method for electronic component - Google Patents
Packaging method for electronic component Download PDFInfo
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- CN102983085A CN102983085A CN2012104389310A CN201210438931A CN102983085A CN 102983085 A CN102983085 A CN 102983085A CN 2012104389310 A CN2012104389310 A CN 2012104389310A CN 201210438931 A CN201210438931 A CN 201210438931A CN 102983085 A CN102983085 A CN 102983085A
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- electronic device
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Abstract
The invention discloses a packaging method for an electronic component. The method comprises the steps of (1) arranging the electronic component on a rigid or flexible substrate; (2) forming a layer of inorganic membrane material on the surface of the electronic component; (3) coating packaging resin on the inorganic membrane material; (4) illuminating ultraviolet light to the packaging resin to enable the packaging resin to be cured; and (5) repeating step (2) to step (3) for two to ten times.
Description
Technical field
The invention belongs to the Electronic Packaging field, particularly relate to a kind of method that adopts UV-cured resin that electronic device is encapsulated.
Background technology
At present, the electronic devices such as light-emitting diode, organic electroluminescence device, solar cell, thin-film transistor, ultraviolet light detector, infrared detector are fast-developing, catered to the market demand of world low-carbon environment-friendly, green living.But above-mentioned electronic product part mostly is to adopt the organic material preparation on rigidity or flexible base, board.Although they have good device performance and since device to external world environment have very strong sensitiveness, the water in the atmospheric environment and oxygen etc. become branch's negative effect serious to material production.Meeting after thereby the device of encapsulation is not placed in atmospheric environment even loses performance fully so that device performance reduces gradually.For this reason, degeneration and the inefficacy of device in the long-term work process is inhibited, steady operation reaches enough life-spans, must encapsulate device, the method for packing that adopts in the industry at present generally all encapsulates device by thermosetting resin, namely places electronic device at substrate, adopts thermosetting resin that electronic device is covered, then this resin of hot curing, thus electronic packing piece formed.
But existing encapsulation technology is owing to need to adopt the mode of heating to come the cure package resin, therefore at high temperature inevitably electronic device is caused damage, and there is the variety of issue that can't overcome in the encapsulation performance of thermosetting resin owing to its physical characteristic.
Developed in the industry now and adopted UV-cured resin that the said goods is encapsulated, but existing UV-cured resin ubiquity hardness, resistance to wear, the deficiency that scoring resistance is not high, therefore, adopt existing UV-cured resin that top electronic product is encapsulated and obtain electronic device still to have number of drawbacks, can not satisfy people to the requirement of high-quality, high-performance, high stability.
Summary of the invention
Primary and foremost purpose of the present invention is to overcome the shortcoming of prior art with not enough, by the method that adopts the special Electronic Packaging resin that proposes of the present invention that the electronic products such as light-emitting diode, solar cell, thin-film transistor are encapsulated, thereby overcome the various deficiencies of prior art.
The method for packing of the electronic device that the present invention proposes comprises the steps:
(1) electronic device is placed on rigidity or the flexible base, board;
(2) form one deck inorganic thin film material on the surface of electronic device;
(3) apply potting resin at described inorganic thin film material;
(4) to described potting resin irradiating ultraviolet light, so that this potting resin solidifies;
(5) above-mentioned steps (2) to (3) is repeated 2 to 10 times.
Wherein, described inorganic thin film material is metal oxide or metal nitride, described metal oxide comprises: calcium oxide, zirconia, chromium oxide, tin oxide, cupric oxide, titanium oxide, zinc oxide, aluminium oxide, nickel oxide, described metal nitride comprises: aluminium nitride, silicon nitride.
Wherein, the resin of described potting resin for being cured by irradiating ultraviolet light, the composition of its mass percent is composed as follows: 25～65% modification SiO2 colloidal sol, 10～30% solvent, 3% light trigger, 0.2% auxiliary agent, 6～13% antistatic agent and 15～55% UV-cured resin;
Wherein, described modification SiO2 colloidal sol for the organic silicon monomer that contains unsaturated double-bond as surface modifier, SiO2 colloidal sol is carried out the modification SiO2 colloidal sol that surface modification obtains.
Wherein, described solvent comprises the alcohol of water and any water-soluble or water miscibility.
Described light trigger is benzophenone, 2-hydroxy-2-methyl-1-phenyl-1-acetone, 1-hydroxyl-cyclohexyl benzophenone.The present invention is preferably benzophenone.
Described auxiliary agent is defoamer.
Described antistatic agent is the polymerizable quaternary surfactant.
Described UV-cured resin comprises the component of following mass percent: 5～30% glycerol, 15～40% epoxidation, 16 carbon conjugated triene acid glycerides, 10～40% three methanol-based propane, 0.5～1% hydroquinones, 8～15% ethyl-methyl acrylate, 10～25% toluene di-isocyanate(TDI), 20～40% oxolane, 3～8% Dimethoxyphenyl ketone, 10～35% methyl methacrylate ,≤1% lead oxide.
Embodiment
The below introduces the first embodiment of the method for packing of the electronic device that the present invention proposes.
Embodiment 1
The method for packing of electronic device comprises the steps:
(1) electronic device is placed on rigidity or the flexible base, board;
(2) form one deck inorganic thin film material on the surface of electronic device;
(3) apply potting resin at described inorganic thin film material;
(4) to described potting resin irradiating ultraviolet light, so that this potting resin solidifies;
(5) above-mentioned steps (2) to (3) is repeated 2 to 10 times.
Wherein, described inorganic thin film material can be by a kind of formation the in vacuum evaporation, plasma reinforced chemical vapour deposition, high density inductive coupling plasma source chemical vapor deposition, the catalyst chemical vapour deposition (CVD); Described potting resin can form by a kind of mode in inkjet printing, dip-coating, roller coat, spraying, the spin coating.
Wherein, described inorganic thin film material is metal oxide or metal nitride, described metal oxide comprises: calcium oxide, zirconia, chromium oxide, tin oxide, cupric oxide, titanium oxide, zinc oxide, aluminium oxide, nickel oxide, described metal nitride comprises: aluminium nitride, silicon nitride.
Wherein, the resin of described potting resin for being cured by irradiating ultraviolet light, the composition of its mass percent is composed as follows: 25～65% modification SiO2 colloidal sol, 10～30% solvent, 3% light trigger, 0.2% auxiliary agent, 6～13% antistatic agent and 15～55% UV-cured resin;
Wherein, described modification SiO2 colloidal sol for the organic silicon monomer that contains unsaturated double-bond as surface modifier, SiO2 colloidal sol is carried out the modification SiO2 colloidal sol that surface modification obtains.The organic silicon monomer that contains unsaturated double-bond for example is: a kind of in vinyltrimethoxy silane, vinyltriethoxysilane, acrylic trimethoxy silane or the gamma-methyl allyl acyloxypropyl trimethoxysilane.
Wherein, described solvent comprises the alcohol of water and any water-soluble or water miscibility, such as methyl alcohol, ethanol, isopropyl alcohol, butanols etc., or alcohol ether such as propylene glycol monomethyl ether, butyl glycol ether etc.
Described light trigger is benzophenone, 2-hydroxy-2-methyl-1-phenyl-1-acetone, 1-hydroxyl-cyclohexyl benzophenone.The present invention is preferably benzophenone.
Described auxiliary agent is defoamer, and for example silicone defoaming agent, polyvinyl and acrylic acid copolymer defoamer, polyether antifoam agent are one of any.
Described antistatic agent is the polymerizable quaternary surfactant, methylacryoyloxyethyl-benzyl-alkyl dimethyl ammonium chloride (MBDAC) for example, one of methylacryoyloxyethyl-butyl-dimethyl ammonium bromide (MBDAB) and methylacryoyloxyethyl-ethyl-dimethyl ammonium bromide (MEDAB) is any.
Described UV-cured resin comprises the component of following mass percent: 5～30% glycerol, 15～40% epoxidation, 16 carbon conjugated triene acid glycerides, 10～40% three methanol-based propane, 0.5～1% hydroquinones, 8～15% ethyl-methyl acrylate, 10～25% toluene di-isocyanate(TDI), 20～40% oxolane, 3～8% Dimethoxyphenyl ketone, 10～35% methyl methacrylate ,≤1% lead oxide.
Embodiment 2
The method for packing of electronic device comprises the steps:
(1) electronic device is placed on rigidity or the flexible base, board;
(2) form one deck inorganic thin film material on the surface of electronic device;
(3) apply potting resin at described inorganic thin film material;
(4) to described potting resin irradiating ultraviolet light, so that this potting resin solidifies;
(5) above-mentioned steps (2) to (3) is repeated 2 to 10 times.
Wherein, described inorganic thin film material can be by a kind of formation the in vacuum evaporation, plasma reinforced chemical vapour deposition, high density inductive coupling plasma source chemical vapor deposition, the catalyst chemical vapour deposition (CVD); Described potting resin can form by a kind of mode in inkjet printing, dip-coating, roller coat, spraying, the spin coating.
Wherein, described inorganic thin film material is metal oxide or metal nitride, described metal oxide comprises: calcium oxide, zirconia, chromium oxide, tin oxide, cupric oxide, titanium oxide, zinc oxide, aluminium oxide, nickel oxide, described metal nitride comprises: aluminium nitride, silicon nitride.
Wherein, the resin of described potting resin for being cured by irradiating ultraviolet light, the composition of its mass percent is composed as follows: 25～65% modification SiO2 colloidal sol, 10～30% solvent, 3% light trigger, 0.2% auxiliary agent, 6～13% antistatic agent and 15～55% UV-cured resin;
Wherein, as surface modifier SiO2 colloidal sol is carried out surface modification by gamma-methyl allyl acyloxypropyl trimethoxysilane and obtain modification SiO2 colloidal sol; Because gamma-methyl allyl acyloxypropyl trimethoxysilane has faster laser curing velocity in UV-cured resin, so the preferred gamma-methyl allyl acyloxypropyl trimethoxysilane of the present invention.
Wherein, described solvent is methyl alcohol, ethanol, isopropyl alcohol, butanols etc., or alcohol ether such as propylene glycol monomethyl ether, butyl glycol ether are one of any.
Described light trigger benzophenone.
Described auxiliary agent is defoamer, and the defoamer that present embodiment adopts is: polyether antifoam agent.
Described antistatic agent is methylacryoyloxyethyl-benzyl-alkyl dimethyl ammonium chloride (MBDAC).
Described UV-cured resin comprises the component of following mass percent: 5～30% glycerol, 15～40% epoxidation, 16 carbon conjugated triene acid glycerides, 10～40% three methanol-based propane, 0.5～1% hydroquinones, 8～15% ethyl-methyl acrylate, 10～25% toluene di-isocyanate(TDI), 20～40% oxolane, 3～8% Dimethoxyphenyl ketone, 10～35% methyl methacrylate ,≤1% lead oxide.
Although described specific embodiments more of the present invention; but it is not for limiting the present invention; protection scope of the present invention is limited to the appended claims; and those skilled in the art can make various modifications to the present invention in the situation that does not break away from the claims protection range.
Claims (9)
1. the method for packing of an electronic device comprises the steps:
(1) electronic device is placed on rigidity or the flexible base, board;
(2) form one deck inorganic thin film material on the surface of electronic device;
(3) apply potting resin at described inorganic thin film material;
(4) to described potting resin irradiating ultraviolet light, so that this potting resin solidifies;
(5) above-mentioned steps (2) to (3) is repeated 2 to 10 times.
2. the method for packing of electronic device as claimed in claim 1 is characterized in that:
Wherein, described inorganic thin film material can be by a kind of formation the in vacuum evaporation, plasma reinforced chemical vapour deposition, high density inductive coupling plasma source chemical vapor deposition, the catalyst chemical vapour deposition (CVD); Described potting resin can form by a kind of mode in inkjet printing, dip-coating, roller coat, spraying, the spin coating.
3. the method for packing of electronic device as claimed in claim 1 or 2 is characterized in that:
Wherein, described inorganic thin film material is metal oxide or metal nitride, described metal oxide comprises: calcium oxide, zirconia, chromium oxide, tin oxide, cupric oxide, titanium oxide, zinc oxide, aluminium oxide, nickel oxide, described metal nitride comprises: aluminium nitride, silicon nitride.
4. such as the method for packing of one of claim 1-3 described electronic device, it is characterized in that:
Wherein, the resin of described potting resin for being cured by irradiating ultraviolet light, the composition of its mass percent is composed as follows: 25～65% modification SiO2 colloidal sol, 10～30% solvent, 3% light trigger, 0.2% auxiliary agent, 6～13% antistatic agent and 15～55% UV-cured resin.
5. the method for packing of electronic device as claimed in claim 4 is characterized in that:
Wherein, described solvent comprises the alcohol of water and any water-soluble or water miscibility, such as methyl alcohol, ethanol, isopropyl alcohol, butanols etc., or alcohol ether such as propylene glycol monomethyl ether, butyl glycol ether etc.
6. such as the method for packing of one of claim 4-5 described electronic device, it is characterized in that:
Described light trigger is benzophenone, 2-hydroxy-2-methyl-1-phenyl-1-acetone, 1-hydroxyl-cyclohexyl benzophenone; Be preferably benzophenone.
7. such as the method for packing of one of claim 4-6 described electronic device, it is characterized in that:
Described auxiliary agent is defoamer, and for example silicone defoaming agent, polyvinyl and acrylic acid copolymer defoamer, polyether antifoam agent are one of any.
8. such as the method for packing of one of claim 4-7 described electronic device, it is characterized in that:
Described antistatic agent is the polymerizable quaternary surfactant, methylacryoyloxyethyl-benzyl-alkyl dimethyl ammonium chloride (MBDAC) for example, one of methylacryoyloxyethyl-butyl-dimethyl ammonium bromide (MBDAB) and methylacryoyloxyethyl-ethyl-dimethyl ammonium bromide (MEDAB) is any.
9. such as the method for packing of one of claim 4-8 described electronic device, it is characterized in that:
Described UV-cured resin comprises the component of following mass percent: 5～30% glycerol, 15～40% epoxidation, 16 carbon conjugated triene acid glycerides, 10～40% three methanol-based propane, 0.5～1% hydroquinones, 8～15% ethyl-methyl acrylate, 10～25% toluene di-isocyanate(TDI), 20～40% oxolane, 3～8% Dimethoxyphenyl ketone, 10～35% methyl methacrylate ,≤1% lead oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210438931.0A CN102983085B (en) | 2012-11-05 | 2012-11-05 | Packaging method for electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210438931.0A CN102983085B (en) | 2012-11-05 | 2012-11-05 | Packaging method for electronic component |
Publications (2)
| Publication Number | Publication Date |
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| CN102983085A true CN102983085A (en) | 2013-03-20 |
| CN102983085B CN102983085B (en) | 2015-06-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210438931.0A Expired - Fee Related CN102983085B (en) | 2012-11-05 | 2012-11-05 | Packaging method for electronic component |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI593737B (en) * | 2014-08-05 | 2017-08-01 | Furukawa Electric Co Ltd | Curable hygroscopic resin composition for sealing electronic device, sealing resin and electronic device |
| WO2018113056A1 (en) * | 2016-12-23 | 2018-06-28 | 武汉华星光电技术有限公司 | Method for manufacturing flexible substrate and flexible panel using screen printing machine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102070981A (en) * | 2010-12-02 | 2011-05-25 | 广州慧谷化学有限公司 | Ultraviolet curing paint and preparation method and application thereof |
| CN102214803A (en) * | 2011-05-20 | 2011-10-12 | 电子科技大学 | Packaging method of photoelectronic device |
-
2012
- 2012-11-05 CN CN201210438931.0A patent/CN102983085B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102070981A (en) * | 2010-12-02 | 2011-05-25 | 广州慧谷化学有限公司 | Ultraviolet curing paint and preparation method and application thereof |
| CN102214803A (en) * | 2011-05-20 | 2011-10-12 | 电子科技大学 | Packaging method of photoelectronic device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI593737B (en) * | 2014-08-05 | 2017-08-01 | Furukawa Electric Co Ltd | Curable hygroscopic resin composition for sealing electronic device, sealing resin and electronic device |
| US10556974B2 (en) | 2014-08-05 | 2020-02-11 | Furukawa Electric Co., Ltd. | Curable and hygroscopic resin composition for sealing electronic devices, sealing resin, and electronic device |
| WO2018113056A1 (en) * | 2016-12-23 | 2018-06-28 | 武汉华星光电技术有限公司 | Method for manufacturing flexible substrate and flexible panel using screen printing machine |
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| Publication number | Publication date |
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| CN102983085B (en) | 2015-06-10 |
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