CN102983050A - Ion injection device - Google Patents
Ion injection device Download PDFInfo
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- CN102983050A CN102983050A CN2011102628223A CN201110262822A CN102983050A CN 102983050 A CN102983050 A CN 102983050A CN 2011102628223 A CN2011102628223 A CN 2011102628223A CN 201110262822 A CN201110262822 A CN 201110262822A CN 102983050 A CN102983050 A CN 102983050A
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Abstract
The invention discloses an ion injection device which comprises a processing vacuum cavity, a workpiece moving device used for moving a workpiece and an ion beam moving device used for moving an ion beam. The workpiece moving device and the ion beam moving device are used for cooperating operation, so that injection of the workpiece by the ion beam in the processing vacuum cavity can be completed; the ion beam is a porphyritic beam; and the workpiece moving device and the ion beam moving device enable an injection track on the surface of the workpiece to be a screwed line. The ion injection device has the advantages of being capable of improving utilization rate of the ion beam, guaranteeing injected dose uniformity and angle uniformity, reducing difficulties of beam adjustment of the ion beam and time consumption, improving production efficiency of ion injection, reducing mechanical design difficulties and manufacturing cost of the device and improving operation stability of the device.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of ion implantation device.
Background technology
Ion implantation technique is that the atomic ionization of certain element is become ion, and it is accelerated to the voltage of hundreds of kilovolt tens, injects a kind of ion beam technology of the surface of the work that places vacuum target chamber after obtaining fair speed.Workpiece is behind the process Implantation, and its surperficial physics, chemistry and mechanical performance all significant change can occur.
At present, adopt ion implantation technique in monocrystalline or polysilicon, to mix, become a kind of common process process of making modern integrated circuits.Because the production of semiconductor product trends towards larger semiconductor crystal wafer (from 8 inches to 12 inches, and now to 18 inches development) gradually, single-wafer technique (single treatment one wafer) is adopted recently widely.
Along with wafer workpiece is increasing, on the one hand, required time of Implantation is more and more longer, therefore the implantation dose uniformity and the implant angle uniformity that want to reach certain are also more and more difficult, on the other hand, single-wafer technique is very strict again to line angular distribution and the inhomogeneity requirement of the ion beam that is injected into wafer workpiece, so this control technology of distributing just for line angular distribution and beam intensity for ion beam has proposed new higher requirement.
Up to the present, people have proposed following several ion implantation techniques successively:
What first kind ion implantation technique adopted is banded line.So-called banded line refers to, the depth-width ratio of this ion beam cross section is very large, be its cross section in the size of the size on the short transverse on the Width, here " short transverse " and " Width " only represents relative direction but not absolute direction certainly.The exemplary of this class technology such as United States Patent (USP) 5,350,926 and 7,326,941 is described.In this class technology, the size of ion beam cross section on short transverse is adjusted to size above wafer workpiece, and adjust line angular distribution and the beam intensity distribution of ion beam on this short transverse even, then make ion beam do scanning motion with respect to workpiece at this Width, just can finish the Implantation processing to workpiece.The advantage of this class technology is: simple, implantation dose uniformity is higher, production efficiency is higher.The shortcoming of such technology then is: 1) along with the size of wafer workpiece is increasing, want with the ion beam cross section under the size on this short transverse is adjusted to situation above the size of wafer workpiece, line angular distribution and the beam intensity of ion beam on this short transverse distributed all to adjust and evenly become more and more difficult, the thing followed is that the required time of adjustment line is more and more longer, and this can cause very large impact to production efficiency; 2) coupling of angle and dosage distribution also can make the control of implant angle become relatively more difficult, and this causes the yields of product to reduce easily; 3) because wafer is circular, so ion beam can constantly pass in and out wafer in the process of scanning, this meeting so that the ion beam of part finally beat outside the wafer, thereby cause a large amount of ion beams to be wasted.
What the Equations of The Second Kind technology adopted is spot shape line.The exemplary of this class technology such as United States Patent (USP) 7,326,941 and 7,276,712 is described.The cross sectional dimensions of spot shape line is less with respect to wafer size, therefore normally make ion beam do the two-dimensional scan campaign with respect to wafer workpiece, it just is several frequently seen scan mode shown in Fig. 1-4, solid line wherein represents all are ion beam first round the scanning of the surface of wafer by the time the injection track, dotted line represents then all be behind wafer Rotate 180 ° ion beam second take turns the scanning of the surface of wafer by the time the injection track.The advantage of such technology is: for the technology that adopts banded line, the uniformity of implantation dosage and the uniformity of implant angle are all better.Yet, the shortcoming of such technology also is more significant: 1) scanning times of ion beam is too much, cause production efficiency not high, especially when the implantation dosage requirement of wafer is lower, because the consideration for implantation homogeneity still needs to satisfy certain scanning times, this moment even needs reduce the requirement that Beam Current satisfies by force implantation dosage, and this raising to production efficiency is very unfavorable; 2) the same with the technology that adopts banded line, ion beam can constantly pass in and out wafer in the process of scanning, and the ion beam that therefore has equally part is beaten in the wafer outside, causes a large amount of ion beams to be wasted; 3) ion beam and relative two-dimensional scan campaign between the wafer are actually that the reciprocating machine of doing one dimension orthoscopic at a high speed or circular arc type track by being used in the fixing work support of wafer scans to realize, and the Machine Design difficulty of such workpiece movement device is obviously higher, and manufacturing expense also can be higher, and the stability when operation also can be relatively poor; 4) work support is except the needs high-velocity scanning, also need to the perpendicular direction in scanning direction on gradually stepping, this is so that the motor pattern of the required realization of workpiece movement device is more complicated, the Machine Design difficulty further improves, manufacturing expense further improves, and operation stability then further reduces.
Summary of the invention
The technical problem to be solved in the present invention is in order to overcome the defective that ion implantation technique production efficiency of the prior art is lower, the ion beam utilance is lower, the Machine Design difficulty is higher, a kind of utilance that can improve ion beam is provided, guarantees dose uniformity and the even angle of injecting, the line adjustment difficulty that reduces ion beam and production efficiency consuming time, as to improve Implantation, reduces Machine Design difficulty and the manufacturing expense of equipment and improve the ion implantation device of the operation stability of equipment.
The present invention solves above-mentioned technical problem by following technical proposals: a kind of ion implantation device, it comprises that a processing procedure vacuum chamber, is used for workpiece movement device and the ion beam mobile device for the moving iron bundle of travelling workpiece, this workpiece movement device and this ion beam mobile device are used for synthetic operation to finish ion beam to the injection of workpiece at this processing procedure vacuum chamber, described ion beam is spot shape line, its characteristics are that it is helix that this workpiece movement device and this ion beam mobile device make the injection track of ion beam on surface of the work.
Preferably, described workpiece is wafer.
Preferably, to make the injection track of ion beam on surface of the work be the equidistant helix that a spiral is centered close to the center of surface of the work for this workpiece movement device and this ion beam mobile device.
Preferably, it is two identical equidistant helix that this workpiece movement device makes the injection track of ion beam on surface of the work with this ion beam mobile device, and the spiral center of these two equidistant helix all is positioned at the center of surface of the work but 180 ° of mutual dislocation.
Preferably, this workpiece movement device and this ion beam mobile device make the injection track of ion beam on surface of the work be at least three equidistant helix, and the spiral center of these at least three equidistant helix all is positioned at the center of surface of the work.
Preferably, the beam intensity of described ion beam is distributed as nearly Gaussian Profile or nearly angular distribution.
Preferably, this workpiece movement device comprises: one is arranged in the sliding bar on the chamber wall of this processing procedure vacuum chamber hermetically, and this sliding bar can axial motion and around axial-rotation; One is fixedly arranged on the work support at an end place that is arranged in this processing procedure vacuum chamber of this sliding bar, this work support be used for fixation workpiece, and can holding workpieces in the plane of surface of the work around the central rotation of surface of the work.
Preferably, this ion beam mobile device is used for the position of ion beam is fixed, and this workpiece movement device is used for being a default implant angle and the axial motion by this sliding bar between workpiece and the ion beam and making workpiece along the central rotation around surface of the work of moving axially, make by this work support simultaneously in the plane of workpiece at surface of the work of this sliding bar by making around axial-rotation of this sliding bar.
Preferably, this ion beam mobile device is used for making ion beam do one-dimensional scanning, and this workpiece movement device is used for being a default implant angle between workpiece and the ion beam and making in the plane of workpiece at surface of the work central rotation around surface of the work by this work support by making around axial-rotation of this sliding bar.
Preferably, this ion beam mobile device is used for making ion beam do one-dimensional scanning, and this workpiece movement device is used for being a default implant angle and the axial motion by this sliding bar between workpiece and the ion beam and making workpiece along the central rotation around surface of the work of moving axially, make by this work support simultaneously in the plane of workpiece at surface of the work of this sliding bar by making around axial-rotation of this sliding bar.
Preferably, this ion implantation device comprises plural described workpiece movement device, those workpiece movement devices are used for alternately, continuously with this ion beam mobile device synthetic operation, to finish alternately, continuously ion beam to the injection of the workpiece on each workpiece movement device.
Preferably, the quantity of described workpiece movement device is two, the sliding bar of these two workpiece movement devices axially all along laterally or all longitudinally.
Preferably, the quantity of described workpiece movement device is three or four, the sliding bar of two workpiece movement devices in those workpiece movement devices axially all along the sliding bar of horizontal, all the other workpiece movement devices axially all longitudinally, perhaps, the sliding bar of two workpiece movement devices in those workpiece movement devices axially all longitudinally, the sliding bar of all the other workpiece movement devices axially all along horizontal.
Positive progressive effect of the present invention is:
1, have benefited from the injection track of spiral form, in the present invention, ion beam only need pass in and out wafer workpiece once, just can be complete implantation dosage injection required on the wafer equably, and this can be promoted to optimum degree with the utilance of ion beam.
2, in the present invention, because what carry out between ion beam and the workpiece is relative rotatablely moving, therefore each position on the surface of the work and the relative angle between the ion beam will be constant all the time, so, as long as the relative angle between a certain position on ion beam and the surface of the work is adjusted to default implant angle, just can guarantee the implant angle uniformity on the whole surface of the work.
3, in the present invention, workpiece only needs to do mechanical rotation movement in the plane of surface of the work, and do simultaneously more alternatively slower one dimension mechanical movement, and the reciprocating machine scanning motion and slower another that need not to carry out one dimension orthoscopic at a high speed or circular arc type track as in the prior art are tieed up mechanical step motion again, owing to reduced on the one hand the dimension of linear mechanical motion, the realization difficulty of mechanical rotation movement is much lower again compared to the realization difficulty of one dimension orthoscopic or the scanning of circular arc type reciprocating machine on the other hand, therefore the present invention can reduce the Machine Design difficulty of equipment significantly, the manufacturing cost of reduction equipment, and the operation stability of while lifting means.
4, the stepping spacing between spiral form is injected the abundant and circle of the number of turns of track and enclosed is enough hour, the present invention distributes with the beam intensity of adjusting in advance again ion beam hardly with taking time and effort, after injecting processing procedure, just can directly satisfy the uniformity requirement of implantation dosage, this can reduce significantly the beam status that injects before beginning and adjust the time, enhance productivity.
Description of drawings
Fig. 1 is the schematic diagram that the first of adopting of existing ion implantation technique is injected track.
Fig. 2 is the schematic diagram that the second of adopting of existing ion implantation technique injects track.
Fig. 3 be existing ion implantation technique adopt the third inject the schematic diagram of track.
Fig. 4 is the 4th kind of schematic diagram that injects track that existing ion implantation technique adopts.
Fig. 5 is the schematic diagram that the first of adopting of this ion implantation device of the present invention is injected track.
Fig. 6 is the schematic diagram that the second of adopting of this ion implantation device of the present invention injects track.
Fig. 7 is the schematic diagram of the first injection mode of adopting of this ion implantation device of the present invention.
Fig. 8 is the schematic diagram of the second injection mode of adopting of this ion implantation device of the present invention.
Schematic diagram when Fig. 9 is two workpiece movement devices of this ion implantation device employing of the present invention.
Schematic diagram when Figure 10 is three workpiece movement devices of this ion implantation device employing of the present invention.
Embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to describe technical scheme of the present invention in detail.
Shown in figure 7-10, this ion implantation device of the present invention and existing ion implantation device similarly include workpiece movement device 3 and the ion beam mobile device for moving iron bundle 4 that a processing procedure vacuum chamber 1, is used for travelling workpiece 2, this workpiece movement device 3 mutually cooperates with making between ion beam 4 and the workpiece 2 with this ion beam mobile device and carries out relative motion, to finish ion beam to the injection processing of surface of the work, wherein, the present invention for be the application scenario of adopting spot shape line to carry out Implantation.
Unlike the prior art be that with reference to figure 5 and shown in Figure 6, the present invention improves the relative motion pattern between ion beam 4 and the workpiece 2, makes ion beam 4 injection track along a spiral form on workpiece 2 surfaces carry out Implantation.This shows that this ion implantation device of the present invention is specially adapted to treat the rounded workpiece of injection zone and processes, wherein, wafer is a better processing object.
Figure 5 shows that the first injection track that this ion implantation device of the present invention can adopt, this injection track is the equidistant helix that a spiral center O is positioned at the center on workpiece 2 surfaces.As can be seen from the figure, at this moment, ion beam is only beginning just can to pass in and out a subjob when this workpiece 2 carried out Implantation and finish Implantation to this workpiece 2, and in the whole period between these two time points, this ion beam all will be thrown in the surface of this workpiece 2, remain thus the effective processing to this workpiece 2, this is just so that be promoted to optimum degree to the utilance of ion beam.
In addition, owing to remain equidistant between the circle of this helix shown in Figure 5 and the circle, therefore operating personnel only need according to the cross sectional dimensions of ion beam and default implantation homogeneity requirement, suitably adjust the number of turns of this spiral form relative motion and the size of the stepping spacing between circle and the circle, while is according to the requirement of default implantation dosage, suitably adjust the helix speed of this spiral form relative motion, just can guarantee fully to satisfy the parameter request of implantation dose uniformity and implantation dosage.And as for the inhomogeneity parameter request of implant angle, then easier to be satisfied, owing to only do relative screw between ion beam 4 and this workpiece 2, therefore only need the relative angle between this upper a certain position, workpiece 2 surfaces and the ion beam is adjusted to default implant angle, just can guarantee fully the implant angle uniformity on the whole workpiece 2.
This injection track shown in Figure 5 comparatively is suitable for using in the situation faster at the more and set helix speed of the set screw number of turns, and in the slower situation of the less and set helix speed of the set screw number of turns, then can adopt the second shown in Figure 6 to inject track.This injection track among Fig. 6 is made of two identical equidistant helix, the spiral center O of these two helixes overlaps in the center on workpiece 2 surfaces, but 180 ° of the position mutual dislocation of these two helixes, so, if wherein the stepping spacing between the circle of a helix and the circle is L, just the stepping spacing between the so adjacent two circle tracks that belong to different helixes will be 0.5L.As shown in Figure 6, when reality was injected, with respect to workpiece 2, ion beam 4 can be along helix from coil to coil wherein to the center precession on workpiece 2 surfaces, and screws out along another root helix from coil to coil.
Yet, the restriction that the injection track that can adopt among the present invention is not subjected to above-mentioned the first and the second injects track, according to the concrete cross sectional dimensions of ion beam and default concrete implantation homogeneity requirement, operating personnel also can adopt other injection track neatly, for example adopt the injection track that is consisted of by the equidistant helix more than three or three, and guarantee that the spiral center of those helixes all overlaps in the center of surface of the work.Because these execution modes are all similar with above-mentioned execution mode, do not give unnecessary details so do not do at this.
Before the actual injection of beginning, usually need to distribute the beam intensity of ion beam by the beam optics element and be adjusted into nearly Gaussian Profile or nearly angular distribution, with the uniformity that guarantees to inject, yet, in the present invention, enough hour of stepping spacing when the number of turns of screw between abundant and circle and the circle, even can distribute hardly the direct parameter request that just can guarantee after injection is complete, to satisfy implantation dose uniformity with adjusting in advance beam intensity.
In the present invention, the ion beam mobile device can utilize various known electric scannings or magnetic scanning technology to realize, does not give unnecessary details so do not do at this.
And for workpiece movement device 3, shown in figure 7-10, one of them better structure can comprise a sliding bar 31 and a work support 32.This sliding bar 31 utilizes air bearing to be arranged in hermetically on the chamber wall of this processing procedure vacuum chamber 1, one end is in the atmospheric environment, the other end is in the vacuum environment, its can be under the driving of motor along himself axially do motion in one dimension, can also axially being rotated around himself.32 of this work supports are fixedly arranged on an end place that is arranged in this processing procedure vacuum chamber 1 of this sliding bar 31, and it can utilize known electromagnetic principle or adopt mechanical means that workpiece is fixed thereon.And this work support 32 can rotate around the center of surface of the work in the plane of drive workpiece 2 at surface of the work under the driving of motor.
So, utilize the axial motion of this sliding bar 31, around the rotation of axial-rotation and this work support 32, just neatly tilted workpiece, rotational workpieces or one-dimensional movement workpiece.
Immobilize or make ion beam do one-dimensional scanning in any direction by the position that makes ion beam, while is in conjunction with the rotation of workpiece, and alternatively more additionally in conjunction with the one-dimensional movement of workpiece, just can synthesize the above-mentioned spiral form relative motion between ion beam and the workpiece, concrete synthesis mode can have multiple, these synthesis modes all can utilize known physics movement composition principle to calculate and obtain, so its concrete calculating implementation method is not done at this and given unnecessary details, below only exemplarily three kinds of synthesis modes are wherein described.
The first synthesis mode: with reference to figure 7, this ion beam mobile device is fixed the position of ion beam, this workpiece movement device 3 satisfies default implant angle by making around axial-rotation of this sliding bar 31 between workpiece 2 and the ion beam 4, and the axial motion by this sliding bar 31 makes workpiece axially do slower one-dimensional movement along this sliding bar 31, make workpiece in the plane of surface of the work, do rotatablely moving at a high speed around the center of surface of the work by this work support 32 simultaneously, thereby utilize this slower one-dimensional movement of workpiece and rotatablely moving of this high speed to synthesize above-mentioned spiral form relative motion.
The second synthesis mode: with reference to figure 8, this ion beam mobile device is followed the usual practice as vertically doing slower one-dimensional scanning ion beam, this workpiece movement device 3 satisfies default implant angle by making around axial-rotation of this sliding bar 31 between workpiece 2 and the ion beam 4, and make workpiece in the plane of surface of the work, do rotatablely moving at a high speed around the center of surface of the work by this work support 32, thereby utilize this slower one-dimensional scanning of ion beam and the rotatablely moving of this high speed of workpiece to synthesize above-mentioned spiral form relative motion.
The third synthesis mode: this ion beam mobile device makes ion beam do slower one-dimensional scanning on any direction, this workpiece movement device 3 satisfies default implant angle by making around axial-rotation of this sliding bar 31 between workpiece 2 and the ion beam 4, and the axial motion by this sliding bar 31 makes workpiece axially do slower one-dimensional movement along this sliding bar 31, make workpiece in the plane of surface of the work, do rotatablely moving at a high speed around the center of surface of the work by this work support 32 simultaneously, thereby utilize this slower one-dimensional scanning of ion beam and this slower one-dimensional movement of workpiece to synthesize a slower one dimension relative motion, and then by the synthetic above-mentioned spiral form relative motion of this high speed rotary motion of this slower one dimension relative motion and workpiece.
As shown in Figure 9 and Figure 10, in this ion implantation device of the present invention even can include plural this workpiece movement device 3, for example include two these workpiece movement devices 3 among Fig. 9, their sliding bar 31 equal along continuous straight runs, in Figure 10, then include three these workpiece movement devices 3, two sliding bar 31 along continuous straight runs wherein, another sliding bar 31 then vertically, certainly, those skilled in the art can design the quantity of workpiece movement device 3 and the position of each workpiece movement device 3 according to actual needs flexibly.In this case, those workpiece movement devices 3 alternately and continuously move, namely when the workpiece on one of them workpiece movement device 3 is in the ion implantation process, 3 of other workpiece movement devices can be carried out the loading or unloading process of workpiece, so just, can farthest effectively utilize ion beam, thereby greatly improve the production efficiency of this ion implantation device of the present invention.
In sum, this ion implantation device of the present invention can improve the utilance of ion beam, the dose uniformity that guarantee to inject and even angle, reduce ion beam line adjustment difficulty and production efficiency consuming time, as to improve Implantation, reduce Machine Design difficulty and the manufacturing expense of equipment and improve the operation stability of equipment.
Although more than described the specific embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is limited by appended claims.Those skilled in the art can make various changes or modifications to these execution modes under the prerequisite that does not deviate from principle of the present invention and essence, but these changes and modification all fall into protection scope of the present invention.
Claims (13)
1. ion implantation device, it comprises that a processing procedure vacuum chamber, is used for workpiece movement device and the ion beam mobile device for the moving iron bundle of travelling workpiece, this workpiece movement device and this ion beam mobile device are used for synthetic operation to finish ion beam to the injection of workpiece at this processing procedure vacuum chamber, described ion beam is spot shape line, it is characterized in that it is helix that this workpiece movement device and this ion beam mobile device make the injection track of ion beam on surface of the work.
2. ion implantation device as claimed in claim 1 is characterized in that, described workpiece is wafer.
3. ion implantation device as claimed in claim 2 is characterized in that, it is the equidistant helix that a spiral is centered close to the center of surface of the work that this workpiece movement device and this ion beam mobile device make the injection track of ion beam on surface of the work.
4. ion implantation device as claimed in claim 2, it is characterized in that, it is two identical equidistant helix that this workpiece movement device makes the injection track of ion beam on surface of the work with this ion beam mobile device, and the spiral center of these two equidistant helix all is positioned at the center of surface of the work but 180 ° of mutual dislocation.
5. ion implantation device as claimed in claim 2, it is characterized in that, this workpiece movement device and this ion beam mobile device make the injection track of ion beam on surface of the work be at least three equidistant helix, and the spiral center of these at least three equidistant helix all is positioned at the center of surface of the work.
6. such as the described ion implantation device of any one among the claim 1-5, it is characterized in that the beam intensity of described ion beam is distributed as nearly Gaussian Profile or nearly angular distribution.
7. such as the described ion implantation device of any one among the claim 1-5, it is characterized in that this workpiece movement device comprises:
One is arranged in the sliding bar on the chamber wall of this processing procedure vacuum chamber hermetically, and this sliding bar can axial motion and around axial-rotation;
One is fixedly arranged on the work support at an end place that is arranged in this processing procedure vacuum chamber of this sliding bar, this work support be used for fixation workpiece, and can holding workpieces in the plane of surface of the work around the central rotation of surface of the work.
8. ion implantation device as claimed in claim 7, it is characterized in that, this ion beam mobile device is used for the position of ion beam is fixed, and this workpiece movement device is used for being a default implant angle and the axial motion by this sliding bar between workpiece and the ion beam and making workpiece along the central rotation around surface of the work of moving axially, make by this work support simultaneously in the plane of workpiece at surface of the work of this sliding bar by making around axial-rotation of this sliding bar.
9. ion implantation device as claimed in claim 7, it is characterized in that, this ion beam mobile device is used for making ion beam do one-dimensional scanning, and this workpiece movement device is used for being a default implant angle between workpiece and the ion beam and making in the plane of workpiece at surface of the work central rotation around surface of the work by this work support by making around axial-rotation of this sliding bar.
10. ion implantation device as claimed in claim 7, it is characterized in that, this ion beam mobile device is used for making ion beam do one-dimensional scanning, and this workpiece movement device is used for being a default implant angle and the axial motion by this sliding bar between workpiece and the ion beam and making workpiece along the central rotation around surface of the work of moving axially, make by this work support simultaneously in the plane of workpiece at surface of the work of this sliding bar by making around axial-rotation of this sliding bar.
11. ion implantation device as claimed in claim 7, it is characterized in that, this ion implantation device comprises plural described workpiece movement device, those workpiece movement devices are used for alternately, continuously with this ion beam mobile device synthetic operation, to finish alternately, continuously ion beam to the injection of the workpiece on each workpiece movement device.
12. ion implantation device as claimed in claim 11 is characterized in that, the quantity of described workpiece movement device is two, the sliding bar of these two workpiece movement devices axially all along laterally or all longitudinally.
13. ion implantation device as claimed in claim 11, it is characterized in that, the quantity of described workpiece movement device is three or four, the sliding bar of two workpiece movement devices in those workpiece movement devices axially all along the sliding bar of horizontal, all the other workpiece movement devices axially all longitudinally, perhaps, the sliding bar of two workpiece movement devices in those workpiece movement devices axially all longitudinally, the sliding bar of all the other workpiece movement devices axially all along horizontal.
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| CN2011102628223A CN102983050A (en) | 2011-09-06 | 2011-09-06 | Ion injection device |
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| CN2011102628223A CN102983050A (en) | 2011-09-06 | 2011-09-06 | Ion injection device |
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| CN102983050A true CN102983050A (en) | 2013-03-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104772460A (en) * | 2015-04-17 | 2015-07-15 | 华中科技大学 | Ionized cluster beam 3D (Three-Dimensional) printing device and ionized cluster beam 3D printing method |
| CN113832814A (en) * | 2021-10-22 | 2021-12-24 | 郑州东辰科技有限公司 | Sand spreading device for calibrating structural depth by sand spreading method |
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| US5641969A (en) * | 1996-03-28 | 1997-06-24 | Applied Materials, Inc. | Ion implantation apparatus |
| TW512390B (en) * | 1997-09-10 | 2002-12-01 | Applied Materials Inc | Method for controlling a workpiece in a vacuum chamber |
| CN1653579A (en) * | 2002-06-21 | 2005-08-10 | 应用材料有限公司 | Multi directional mechanical scanning in an ion implanter |
| CN102110569A (en) * | 2009-12-25 | 2011-06-29 | 上海凯世通半导体有限公司 | Device for mechanically scanning workpiece |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5641969A (en) * | 1996-03-28 | 1997-06-24 | Applied Materials, Inc. | Ion implantation apparatus |
| TW512390B (en) * | 1997-09-10 | 2002-12-01 | Applied Materials Inc | Method for controlling a workpiece in a vacuum chamber |
| CN1653579A (en) * | 2002-06-21 | 2005-08-10 | 应用材料有限公司 | Multi directional mechanical scanning in an ion implanter |
| CN102110569A (en) * | 2009-12-25 | 2011-06-29 | 上海凯世通半导体有限公司 | Device for mechanically scanning workpiece |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104772460A (en) * | 2015-04-17 | 2015-07-15 | 华中科技大学 | Ionized cluster beam 3D (Three-Dimensional) printing device and ionized cluster beam 3D printing method |
| CN104772460B (en) * | 2015-04-17 | 2017-01-11 | 华中科技大学 | Ionized cluster beam 3D (Three-Dimensional) printing device and ionized cluster beam 3D printing method |
| CN113832814A (en) * | 2021-10-22 | 2021-12-24 | 郑州东辰科技有限公司 | Sand spreading device for calibrating structural depth by sand spreading method |
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