CN102916137B - A kind of encapsulating structure of organic electroluminescence device and method for packing - Google Patents
A kind of encapsulating structure of organic electroluminescence device and method for packing Download PDFInfo
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- CN102916137B CN102916137B CN201210435587.XA CN201210435587A CN102916137B CN 102916137 B CN102916137 B CN 102916137B CN 201210435587 A CN201210435587 A CN 201210435587A CN 102916137 B CN102916137 B CN 102916137B
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Abstract
The invention discloses a kind of encapsulating structure and method for packing of organic electroluminescence device.This invention adopts the indium of low melting point and indium alloy to carry out the sealing-in of organic electroluminescence device substrate and cover plate, a resistance heating layer is set below the indium sealing layer of substrate, during sealing-in, resistance heating layer makes it generate heat by electric current, heating indium sealing layer makes its indium or indium alloy fusing, completes the sealing-in of organic electroluminescence device substrate and panel.The present invention can make heating position during indium sealing-in be confined to the sealing-in position at organic electroluminescence device edge, avoids the temperature of luminous organic material in the middle part of organic electroluminescence device to rise the too high luminescent material hydraulic performance decline that causes or inefficacy.
Description
Technical field
The invention belongs to the encapsulation technology field of organic electro-optic device, be specifically related to a kind of encapsulating structure and method for packing of organic electroluminescence device.
Background technology
Organic electroluminescence device (OLED) has active illuminating, brightness is high, full-color EL display, driving voltage are low, thickness of detector is thin, can realize the features such as Flexible Displays, has a good application prospect in large screen flat plate display and flexible display.
Luminous organic material in organic electroluminescence device to steam and oxygen very responsive, seldom the steam of amount and oxygen just can damage luminous organic material, make the luminescent properties of device deteriorated.Therefore, ensure that device has the useful life that can meet business application, steam and oxygen should lower than 10 to the permeability of the encapsulating material of device
-6g/m
2the level of/day.
Seal, sealing materials between the substrate of conventional package organic electroluminescence device and cover plate, in majority application, adopt ultraviolet cured epoxy (also claiming UV glue), its shortcoming is poor to the barrier property of water and oxygen, and such as water is the ultraviolet cured epoxy of 1 millimeter and the permeability of heat-curable epoxy resin thin slice to thickness is 10
0~ 10
-1g/m
2/ day magnitude, can not meet the encapsulation requirement of long-life organic electroluminescence device.
In order to solve the encapsulation problem of long-life organic electroluminescence device, low-melting-point metal can be adopted, as indium and indium alloy carry out heat-sealable as the encapsulating material of device.In existing indium sealing-in RELATED APPLICATIONS, the method that heats whole device when adopting sealing-in, completes sealing-in between panel and cover plate to melt indium sealing layer.The shortcoming of this method to cause the temperature of luminous organic material in the middle part of device equally high with the temperature at device edge sealing-in position, easily makes the luminous organic material that can not bear higher temperature damage.And sealing temperature is too low, indium or indium alloy fusing deficiency can be caused again, fine and close indium sealing layer can not be formed, cause sealing layer to leak gas.
Summary of the invention
The problem that during in order to solve the sealing-in of organic luminescent device indium, in the middle part of device, luminous organic material temperature rise is too high.
The present invention adopts following technical scheme: a kind of encapsulating structure of organic electroluminescence device, comprises substrate, cover plate and sealing layer, it is characterized in that: also comprise the built-in resistance heating layer for heating sealing layer.
Substrate described in the present invention is provided with ITO electrode layer, the sealing region of ITO electrode layer is provided with ITO electrode insulating barrier, sealing layer top and bottom are provided with transition zone, and the transition zone lower surface of substrate side arranges resistance heating layer, and described resistance heating layer Surface coating has insulating barrier.
Ringwise, its width, thickness and material are all identical for resistance heating layer described in the present invention, and two of resistance heating layer resistance heating layer length of drawing between line end are equal.Equal by the electric current on each limit of resistance heating layer to ensure, on resistance heating layer, the heating power of unit are is consistent, thus when ensureing sealing-in, sealing layer homogeneous temperature is everywhere consistent
The material of the substrate described in the present invention and cover plate can be glass, metal or mica.
The material of the ITO electrode insulating barrier described in the present invention and insulating barrier is Al
2o
3or SiO
2, its thickness is 0.2 ~ 10 μm, the wide 1 ~ 2mm of width of its width ratio resistance zone of heating.
The material of resistance heating layer of the present invention is nichrome, and its composition is nickel is 80%, and chromium is 20%; The material also available iron Cr-Al alloy of resistance heating layer, its composition is chromium is 12% ~ 28%, and aluminium is 4% ~ 7%, and iron is 84% ~ 65%.The thickness of resistance heating layer is 1 ~ 10 μm, and width is identical with sealing layer.
The material of the transition zone described in the present invention is the one in Au, Ag, Pt or AgCu alloy; The composition of AgCu alloy is silver is 5% ~ 45%, and surplus is copper.The thickness of transition zone is 0.1 ~ 50 μm, width 0.5 ~ 1mm wider than the width of sealing layer.
The material of sealing layer described in the present invention is the one in indium, indium stannum alloy or indium bismuth alloy, and the composition of indium stannum alloy is: indium 40 ~ 60%, tin 60 ~ 40%.The composition of indium bismuth alloy is: indium 60 ~ 70%, bismuth 40 ~ 30%.The thickness of sealing layer is 1 ~ 50 μm, and sealing layer width is 0.5 ~ 3mm.
The present invention also provides a kind of method for packing of encapsulating structure of organic electroluminescence device, comprises the following steps:
(1) before substrate is coated with organic luminous layer and cathode layer; in air or protective gas atmosphere; use hot cladding process or print process; sealing layer is applied on the surface respectively at the transition zone of substrate and cover plate; material is indium or indium stannum alloy or indium bismuth alloy; its thickness is 1 ~ 50 μm, and particularly preferred thickness is 2 ~ 10 μm, and width is 0.5 ~ 3mm.
(2) substrate and cover plate that have applied sealing layer are placed in a heatable container, are heated to above sealing layer melting temperature 10 ~ 20 DEG C, sealing layer is fully melted, and form good infiltration and combination with transition zone.
(3) on substrate, organic luminous layer and cathode layer is coated with.
(4) in protective gas atmosphere, the sealing layer of substrate is placed on a platform upward, the sealing layer alignment and congruence of substrate and cover plate, on the cover board places a weight, makes the pressure between cover plate sealing layer and substrate sealing layer be 1 ~ 2kg/cm
2.
(5) under protective gas atmosphere; draw line end for two at resistance heating layer; connect direct current or AC power that an output voltage or output current can regulate; the electric current that regulating resistance zone of heating passes through; make the temperature of indium sealing layer higher than sealing layer melting temperature 10 ~ 20 DEG C, the sealing-in of completing substrate and cover plate.
In the present invention, when described sealing-in substrate and cover plate, the kind of protective gas is the one of nitrogen or inert gas, and purity is 99.99% ~ 99.999%.
The present invention compared with prior art has following beneficial effect:
Only the sealing layer at device edge position is heated in the sealing-in process of organic luminescent device, can effectively heat indium sealing layer temperature required to sealing-in, can avoid again that the luminous organic material heating-up temperature in the middle part of to device is too high causes it to damage, effectively can improve the yields of sealing-in.
Accompanying drawing explanation
Fig. 1 is the structural representation of encapsulating structure of the present invention;
Fig. 2 is plan structure schematic diagram of the present invention.
Wherein, 1 substrate, 2 cover plates, 3ITO electrode layer, 4, ITO electrode insulating barrier, 5 resistance heating layers, 6 insulating barriers, 7 transition zones, 8 sealing layers, 15 organic luminous layers and cathode layer, 16 draw line ends.
Embodiment
Below in conjunction with the drawings and the specific embodiments, the invention will be further described.
As depicted in figs. 1 and 2, the encapsulating structure of organic electroluminescence device, comprises substrate 1, cover plate 2 and sealing layer 8, also comprises the built-in resistance heating layer 5 for heating sealing layer 8.
Described substrate 1 is provided with ITO electrode layer 3, the sealing region of ITO electrode layer 3 is provided with ITO electrode insulating barrier 4, sealing layer 8 top and bottom are provided with transition zone 8, and transition zone 7 lower surface of substrate 1 side arranges resistance heating layer 5, and described resistance heating layer 5 Surface coating has insulating barrier 6.
The thickness of described resistance heating layer 5 is 1 ~ 10 μm, and width is identical with sealing layer 8, and its material is nichrome or Aludirome, and the composition of described nichrome is nickel is 80%, chromium is 20%; The composition of described Aludirome is chromium is 12% ~ 28%, aluminium is 4% ~ 7%, iron is 84% ~ 65%.
Ringwise, its width, thickness and material are all identical for described resistance heating layer 5, and resistance heating layer 5 length between two of resistance heating layer 5 exits is equal.
Described substrate 1 and the material of cover plate 2 are glass, metal or mica.
Described ITO electrode insulating barrier 4 and the material of insulating barrier 6 are Al
2o
3or SiO
2, its thickness is 0.2 ~ 10 μm, the wide 1 ~ 2mm of width of its width ratio resistance zone of heating 5.
The material of described transition zone 7 is the one in Au, Ag, Pt or AgCu alloy; The composition of AgCu alloy is silver is 5% ~ 45%, and surplus is copper; The thickness of transition zone 7 is 0.1 ~ 50 μm, width 0.5 ~ 1mm wider than the width of sealing layer 8.
The material of described sealing layer 8 is the one in indium, indium stannum alloy or indium bismuth alloy, and the composition of indium stannum alloy is: indium 40 ~ 60%, tin 60 ~ 40%; The composition of indium bismuth alloy is: indium 60 ~ 70%, bismuth 40 ~ 30%; The thickness of sealing layer 8 is 1 ~ 50 μm, and width is 0.5 ~ 3mm.
the preparation process of the encapsulating structure of embodiment 1 organic electroluminescence device
Step (1): use magnetically controlled DC sputtering coating method, prepares ITO electrode layer 3 on substrate 1;
Step (2): use rf magnetron sputtering coating method, the sealing region of ITO electrode layer 3 is prepared ITO electrode insulating barrier 4;
Step (3): deposited by electron beam evaporation method or vacuum vapor deposition method, at the sealing region place of substrate 1 and cover plate 2 frame, prepares transition zone 7;
Step (4): by hot cladding process or print process, substrate 1 and cover plate 2 transition zone 7 on the surface, apply sealing layer 8 respectively;
Step (5): the substrate 1 and cover plate 2 that have applied sealing layer 8 are put into a heating chamber, substrate 1 and cover plate 2 are heated; Heating-up temperature is up to the above 10-20 DEG C of sealing layer 8 fusing point, makes sealing layer and transition zone surface fully infiltrate and bond, then cools to room temperature, substrate 1 and cover plate 2 are taken out from heating chamber.
Step (6): adopt vacuum evaporatation, prepare organic luminous layer 15 and cathode layer on substrate 1.
the encapsulation step of embodiment 2 organic electroluminescence device
Step (1): under vacuum conditions, substrate 1 and cover plate 2 are transplanted on and are in the glove box of vacuum, then this glove box is filled with high pure nitrogen or high purity inert gas; On the sealing layer of substrate 1 and cover plate 2 is alignd face-to-face and overlays in glove box a platform, the substrate 1 stacked and lid 2 plates press a weight; The weight of this weight will reach and make the pressure on sealing layer 8 contact-making surface of substrate 1 and cover plate 2 be 1-2kg/cm
2.
Step (2): draw line ends 16 at two of resistance heating layer 5 and connect the direct current or AC power that an output voltage or output current can regulate, regulate the electric current flow through in resistance heating layer, the temperature of sealing layer 8 is made to reach the temperature of sealing layer 8 melting temperature above 10-20 DEG C, then be incubated 20-30 minute, make the sealing layer 8 between substrate 1 and cover plate 2 melt and fuse.
Step (3): stop heating resistor zone of heating 5, after sealing layer 8 temperature of device is reduced to room temperature, take out the organic luminescent device that sealing-in completes from glove box.
Claims (4)
1. the encapsulating structure of organic electroluminescence device, comprises substrate, cover plate and sealing layer, it is characterized in that: also comprise the built-in resistance heating layer for heating sealing layer; Described substrate is provided with ITO electrode layer, the sealing region of ITO electrode layer is provided with ITO electrode insulating barrier, sealing layer top and bottom are provided with transition zone, and the transition zone lower surface of substrate side arranges resistance heating layer, and described resistance heating layer Surface coating has insulating barrier; The thickness of described resistance heating layer is 1 ~ 10 μm, and width is identical with sealing layer, and its material is nichrome or Aludirome, and the composition of described nichrome is nickel is 80%, chromium is 20%; The composition of described Aludirome is chromium is 12% ~ 28%, aluminium is 4% ~ 7%, iron is 84% ~ 65%; Ringwise, its width, thickness and material are all identical for described resistance heating layer, and two of resistance heating layer resistance heating layer length of drawing between line end are equal; Described ITO electrode insulating barrier and the material of insulating barrier are Al
2o
3or SiO
2, its thickness is 0.2 ~ 10 μm, the wide 1 ~ 2mm of width of its width ratio resistance zone of heating; The material of described transition zone is the one in Au, Ag, Pt or AgCu alloy; The composition of AgCu alloy is silver is 5% ~ 45%, and surplus is copper; The thickness of transition zone is 0.1 ~ 50 μm, width 0.5 ~ 1mm wider than the width of sealing layer; The material of described sealing layer is the one in indium, indium stannum alloy or indium bismuth alloy, and the composition of indium stannum alloy is: indium 40 ~ 60%, tin 60 ~ 40%; The composition of indium bismuth alloy is: indium 60 ~ 70%, bismuth 40 ~ 30%; The thickness of sealing layer is 1 ~ 50 μm, and sealing layer width is 1 ~ 3mm.
2. the encapsulating structure of organic electroluminescence device according to claim 1, is characterized in that: described substrate and the material of cover plate are glass, metal or mica.
3. the method for packing of the encapsulating structure of the organic electroluminescence device according to any one of claim 1 ~ 2, is characterized in that, comprises the following steps:
(1) before substrate is coated with organic luminous layer and cathode layer, in air or protective gas atmosphere, use hot cladding process or print process, sealing layer is applied on the surface respectively at the transition zone of substrate and cover plate, material is indium or indium stannum alloy or indium bismuth alloy, its thickness is 1 ~ 50 μm, and width is 0.5 ~ 3mm;
(2) substrate and cover plate that have applied sealing layer are placed in a heatable container, are heated to above sealing layer melting temperature 10 ~ 20 DEG C, sealing layer is fully melted, and form good infiltration and combination with transition zone;
(3) on substrate, organic luminous layer and cathode layer is coated with;
(4) in protective gas atmosphere, the sealing layer of substrate is placed on a platform upward, the sealing layer alignment and congruence of substrate and cover plate, on the cover board places a weight, makes the pressure between cover plate sealing layer and substrate sealing layer be 1 ~ 2kg/cm
2;
(5) under protective gas atmosphere; draw line end for two at resistance heating layer; connect direct current or AC power that an output voltage or output current can regulate; the electric current that regulating resistance zone of heating passes through; make the temperature of indium sealing layer higher than sealing layer melting temperature 10 ~ 20 DEG C, the sealing-in of completing substrate and cover plate.
4. the method for packing of the encapsulating structure of organic electroluminescence device according to claim 3, is characterized in that: when described sealing-in substrate and cover plate, and the kind of protective gas is the one of nitrogen or inert gas, and purity is 99.99% ~ 99.999%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210435587.XA CN102916137B (en) | 2012-11-05 | 2012-11-05 | A kind of encapsulating structure of organic electroluminescence device and method for packing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210435587.XA CN102916137B (en) | 2012-11-05 | 2012-11-05 | A kind of encapsulating structure of organic electroluminescence device and method for packing |
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| Publication Number | Publication Date |
|---|---|
| CN102916137A CN102916137A (en) | 2013-02-06 |
| CN102916137B true CN102916137B (en) | 2015-10-14 |
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| CN103383992B (en) * | 2013-08-13 | 2015-12-02 | 深圳市华星光电技术有限公司 | The method for packing of OLED and the OLED with the method encapsulation |
| CN103515546B (en) * | 2013-10-24 | 2016-02-10 | 四川虹视显示技术有限公司 | A kind of oled substrate cutting protective device and cutting method |
| CN106711357A (en) * | 2017-01-20 | 2017-05-24 | 深圳市华星光电技术有限公司 | OLED (Organic Light-Emitting Diode) encapsulation method |
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| JP2000252058A (en) * | 1999-03-01 | 2000-09-14 | Stanley Electric Co Ltd | Organic el display device and sealing method thereof |
| KR20060028212A (en) * | 2004-09-24 | 2006-03-29 | 전자부품연구원 | Oled and method for fabricating the same |
| CN1799116A (en) * | 2003-06-04 | 2006-07-05 | 株式会社东芝 | Image display device and method of manufacturing the same |
| CN101937974A (en) * | 2010-07-06 | 2011-01-05 | 电子科技大学 | Encapsulation structure of flexible organic electroluminescence device and encapsulation method thereof |
| CN102017792A (en) * | 2008-02-29 | 2011-04-13 | 康宁股份有限公司 | Frit sealing using direct resistive heating |
| CN102332536A (en) * | 2011-09-29 | 2012-01-25 | 电子科技大学 | Packaging structure and packaging method for organic electroluminescent device |
-
2012
- 2012-11-05 CN CN201210435587.XA patent/CN102916137B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000252058A (en) * | 1999-03-01 | 2000-09-14 | Stanley Electric Co Ltd | Organic el display device and sealing method thereof |
| CN1799116A (en) * | 2003-06-04 | 2006-07-05 | 株式会社东芝 | Image display device and method of manufacturing the same |
| KR20060028212A (en) * | 2004-09-24 | 2006-03-29 | 전자부품연구원 | Oled and method for fabricating the same |
| CN102017792A (en) * | 2008-02-29 | 2011-04-13 | 康宁股份有限公司 | Frit sealing using direct resistive heating |
| CN101937974A (en) * | 2010-07-06 | 2011-01-05 | 电子科技大学 | Encapsulation structure of flexible organic electroluminescence device and encapsulation method thereof |
| CN102332536A (en) * | 2011-09-29 | 2012-01-25 | 电子科技大学 | Packaging structure and packaging method for organic electroluminescent device |
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