CN102829884B - High-speed superconducting nanowire single-photon detector (SNSPD) with strong absorption structure and preparation method of high-speed SNSPD - Google Patents
High-speed superconducting nanowire single-photon detector (SNSPD) with strong absorption structure and preparation method of high-speed SNSPD Download PDFInfo
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Abstract
The invention discloses a high-speed superconducting nanowire single-photon detector (SNSPD) with a strong absorption structure and a preparation method of the high-speed SNSPD with the strong absorption structure. The SNSPD is capable of further improving the photon absorptivity of superconducting nanowires based on an incident medium with a high refractive index and an air cavity structure. Compared with the prior art and according to the high-speed SNSPD, under the condition that the nanowires are made of superconducting ultrathin membranes with the same material and the same thickness, nearly 100% of absorptivity can be realized through a lower duty ratio, and the difficulty of electron beams in the exposure steps is reduced greatly, thereby particularly being more beneficial to the preparation of the ultrathin nanowires; and meanwhile, by adopting a silicon on insulator (SOI) substrate, the high-quality growth of the superconducting ultrathin membranes can be ensured simultaneously without affecting the intrinsic quantum efficiency of the detector. In addition, under the condition that the large effective detection area is ensured equally, as the total length of the required nanowires is reduced obviously, the maximum counting rate of the detector can be improved, and the probability of occurring defects during preparation process is decreased notably.
Description
Technical field
The invention belongs to single photon detection field, be applicable to realize supper-fast and high efficiency single photon detection at near-infrared band, relate to a kind of high speed SNSPD with strong absorbing structure and preparation method thereof.
Background technology
In recent years, G.N.Gol ' tsman et al., " Picosecond superconductingsingle-photon optical detector, " Applied Physics Letter, vol.79, pp.705 – 707, the 2001. superconducting nano-wire single-photon detectors (SNSPD) of recording, due to its single photon detection ability in visible ray and infrared band excellence, superelevation counting rate, low dark counting, very little time jitter is more and more subject to people and pays close attention to widely, especially its quantum efficiency that can realize at near-infrared band and peak count rate have all surpassed the existing avalanche photodide based on composite semiconductor material, make it become the strongest candidate's detectors in field such as quantum communication and long-range optical communication.At present, the intrinsic quantum efficiency of the SNSPD being made by the most frequently used niobium nitride (NbN) superconductor can reach more than 90%, but its limited absorptivity has become a bottleneck of restriction SNSPD total system quantum efficiency.Because the core photosensitive region of SNSPD is to consist of ultra-thin nano wire, so it is very limited to the absorptivity of incident photon, photon can pass from the gap between nano wire with the probability of quite a few, or directly through film, or reflect back from superconducting thin film.K.M.Rosfjord et al., " Nanowire single-photon detector with an integrated optical cavityand anti-reflection coating; " Optics Express, vol.14, pp.527 – 534,2006. is recording to SNSPD increases the method that optical resonator structures significantly improves its photonic absorbance.But NbN nano wire thick for more typical 4nm, 50% dutycycle, can only obtain the absorptivity of 70% left and right in this way.If further improve absorptivity, need to increase dutycycle or the thickness of nano wire, but the former has proposed harsher requirement in sample preparation, and the latter can cause the decline of detector intrinsic quantum efficiency.US 2012/0077680A1 " Nanowire-based detector " K.K.Berggren, X.Hu, the people such as D.Masciarelli propose based on nano-antenna increase the method for absorptivity can be thick at 4nm, under the condition of 50% dutycycle NbN nano wire, can realize the absorptivity close to 100%, but this scheme has proposed higher requirement equally in sample preparation, final experimental result shows that its yield rate is not high.
Summary of the invention
In order to overcome above-mentioned the deficiencies in the prior art, the object of the present invention is to provide a kind of high speed SNSPD with strong absorbing structure and preparation method thereof, can under the condition of low duty ratio, realize high-absorbility, there is feature simple in structure, technique is controlled.
To achieve these goals, the technical solution used in the present invention is respectively:
A high speed SNSPD with strong absorbing structure, comprises bottom Si substrate 1, at bottom Si substrate 1, deposits multilayer Si/SiO
2the Bragg mirror 2 that cycle arranges and forms, Bragg mirror 2 tops are provided with the bottom resonator cavity 1 that epitaxy single-crystal Si forms, above bottom resonator cavity 1, there is superconducting nano-wire 1, on superconducting nano-wire 1, there is air resonance chamber, upper strata 5, there is Si sheet 65 tops, air resonance chamber, upper strata, have antireflection film 1 on Si sheet 6.
Described Bragg mirror 2 is by multilayer Si/SiO
2gap periods is arranged and to be formed, and periodicity is more than 3, the thickness of every one deck equal incident light in this medium effective wavelength 1/4th, one deck SiO of below
2on Si substrate 1.
The thickness of described superconducting nano-wire is generally between 4-6nm, and width is generally between 20-200nm, and the superconductor of employing is NbN, NbTiN, TaN, NbSi, Nb or W
xsi
1-x.
Described bottom resonator cavity 1 is taken on by the epitaxy single-crystal Si layer of SOI substrate, thickness needs by emulation, to optimize in advance, optimal value is 1/2nd left and right of incident light effective wavelength in this medium, but can have difference a little according to the material of superconducting nano-wire, thickness and dutycycle difference.
Air resonance chamber, described upper strata 5 is completed by Au-Au bonding technology,, thickness needs by emulation, to optimize in advance, 1/4th left and right that optimal value is lambda1-wavelength, but can have difference a little according to the material of superconducting nano-wire, thickness and dutycycle difference.
Described antireflection film one 7 refractive indexes between 1.7-2.0, thickness equal incident light in this medium effective wavelength 1/4th, can use Al
2o
3deng material.
The present invention provides the method for preparing right said structure high speed SNSPD simultaneously, comprises the steps:
(a) prepare SOI substrate, by emulation, obtain in advance the precise thickness of needed epitaxy single-crystal Si layer, the Si layer at the mechanical reduction back side;
(b) oxidation SOI substrate, controls SiO in process
2thickness;
(c) with CVD method growth polycrystalline Si layer, and partial oxidation Si layer, SiO obtained
2layer, n time so repeatedly, obtains the Si/SiO in n+1 cycle
2bragg mirror;
(d) by the method for Si-Si bonding, above-mentioned substrate and another Si sheet are bonded together, as new substrate;
(e) with buffered hydrofluoride acid and KOH corrosive liquid, corrode successively respectively the SiO of SOI substrate back
2with Si layer, then with buffered hydrofluoride acid, remove the SiO of single crystal Si layer bottom
2buried regions, exposes single crystal Si layer;
(f) growth of superconductive film in single crystal Si layer, and form superconducting nano-wire by electron beam exposure and reactive ion etching;
(g) above superconducting nano-wire, make Au/Ti figure, as the co-planar waveguide sensing circuit of detector, for follow-up Au-Au bonding, prepare simultaneously;
(h) prepare the Si sheet of a twin polishing, first one side is prepared Al by methods such as ALD or sputters therein again
2o
3film, at another side, makes Au/Ti figure;
(i) by the method for Au-Au bonding, finally form air resonance chamber, upper strata, the thickness in air resonance chamber, upper strata determines by controlling the thickness of both sides Au/Ti layer.
A kind of the second structure with the high speed SNSPD of strong absorbing structure of the present invention, comprise metallic film catoptron 8, the upper strata resonator cavity 9 that metallic film catoptron 8 belows have transparent dielectric material to form, resonator cavity 9 belows in upper strata are superconducting nano-wire 2 10, superconducting nano-wire 2 10 belows are epitaxy single-crystal Si layer 11, epitaxy single-crystal Si layer 11 below are Si substrate 2 12, and Si substrate 2 12 has bottom resonator cavity 2 13 towards extension single crystal Si layer 11, and there is antireflection film 2 14 Si substrate 2 12 belows.
Described transparent dielectric material is SiO
2, resonator cavity 9 thickness in upper strata need by emulation, to optimize in advance, and optimal value is 1/4th left and right of incident light effective wavelength in this medium, but can have difference a little according to the material of superconducting nano-wire, thickness and dutycycle difference.
Described metallic film catoptron 8 consists of the Au film of the above thickness of 60nm, and has the Ti of 1-2nm thickness as adhesion layer between the dielectric material of formation upper strata resonator cavity 9.
Described bottom resonator cavity 2 13 consists of epitaxy single-crystal Si layer 11 and air layer, the thickness of air layer is 1/4th of lambda1-wavelength, the thickness of epitaxy single-crystal Si layer 11 needs by emulation, to optimize in advance, optimal value is 1/2nd left and right of lambda1-wavelength, but can have difference a little according to the material of superconducting nano-wire, thickness and dutycycle difference.
The method of preparing above-mentioned the second structure high-speed SNSPD, comprises the steps:
(a) prepare the Si sheet of a twin polishing, one side carves groove therein;
(b) prepare SOI substrate, obtain in advance the precise thickness of needed epitaxy single-crystal Si layer by emulation, the Si layer at the mechanical reduction back side, by the method for Si-Si bonding, SOI substrate be above-mentionedly with reeded Si sheet to be bonded together;
(c) with KOH corrosive liquid, corrode the back of the body Si layer of SOI substrate, then remove SiO with buffered hydrofluoride acid
2buried regions, exposes single crystal Si layer;
(d) sputter growth of superconductive film in single crystal Si layer, and form superconducting nano-wire by electron beam exposure and reactive ion etching; Preparation Al for the another side of substrate
2o
3film is as antireflection film;
(e) on superconducting nano-wire, make Au/Ti figure, as the co-planar waveguide sensing circuit of detector; Finally make upper strata resonator cavity and catoptron.
Compared with prior art, the invention has the beneficial effects as follows:
Based on high index of refraction incident medium and air chamber structure, further improve the absorptivity of superconducting nano-wire photon, equally, under the thick NbN nano wire condition of 4nm, simulation result shows, use this two schemes, only use the nano wire dutycycle of 25% left and right, just can reach the absorptivity close to 100%, this reduces the difficulty of electron beam exposure step greatly, and this is especially for more favourable the preparation of superfine nanowire (width is below 50nm).The employing of SOI substrate can guarantee the high-quality growth of superconducting thin film simultaneously, does not affect the intrinsic quantum efficiency of detector.In addition, guaranteeing under the condition of same large useful detection area, the total length of the nano wire needing due to us significantly reduces, and the peak count rate of detector can get a promotion, and the probability that defect occurs in preparation process significantly reduces.
Accompanying drawing explanation
Fig. 1 is the SNSPD structural representation that described the first has strong absorbing structure.
Fig. 2 is the SNSPD structural representation that described the second has strong absorbing structure.
Fig. 3 is the SNSPD preparation flow figure that described the first has strong absorbing structure.
Fig. 4 is the SNSPD preparation flow figure that described the second has strong absorbing structure.
Fig. 5 is that described the first has the SNSPD photonic absorbance of strong absorbing structure with the variation simulation result of nano wire dutycycle.
Fig. 6 is that described the first has the SNSPD photon reflection rate of strong absorbing structure and transmissivity with the variation simulation result of nano wire dutycycle.
Fig. 7 is described two kinds and has the SNSPD photonic absorbance of strong absorbing structure and the comparison of existing other technology.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further details.
Be illustrated in figure 1 the superconducting nano-wire single-photon detector that the first of the present invention has strong absorbing structure, comprise bottom Si substrate 1, at bottom Si substrate 1, deposit multilayer Si/SiO
2the Bragg mirror 2 that cycle arranges and forms, Bragg mirror 2 tops are provided with the bottom resonator cavity 1 that epitaxy single-crystal Si forms, above bottom resonator cavity 1, there is superconducting nano-wire 1, on superconducting nano-wire 1, there is air resonance chamber, upper strata 5, there is Si sheet 65 tops, air resonance chamber, upper strata, have antireflection film 1 on Si sheet 6.
By multilayer Si/SiO
2the Bragg mirror 2 that cycle arranges when its periodicity is larger (being greater than 6), has high reflectivity in sizable wavelength coverage, and reflectivity is greater than 99%.And because the refractive index difference of air and Si material is larger, the interface between air resonance chamber and upper strata Si sheet also can form a good reflecting surface.When the air resonance chamber on upper strata and the Si resonant cavity thickness of bottom are just in time suitable, incident light just in time forms standing wave between two reflectings surface, superconducting nano-wire is the anti-node location in light intensity maximum just in time, so this structure can increase the photonic absorbance of nano wire significantly.
As shown in Figure 3, its preparation process comprises the steps:
(a) prepare SOI substrate, by emulation, obtain in advance the precise thickness of needed epitaxy single-crystal Si layer, the Si layer at the mechanical reduction back side.
(b) oxidation SOI substrate, needs accurately to control SiO
2thickness.
(c) with CVD method growth polycrystalline Si layer, and partial oxidation Si layer, SiO obtained
2layer, n(n>=3 so repeatedly) inferior, obtain the Si/SiO in n+1 cycle
2bragg mirror, needs the accurately thickness of the every one deck of control.
(d) by the method for Si-Si bonding, above-mentioned substrate and another Si sheet are bonded together, as new substrate.
(e) use respectively hydrofluorite (HF) buffered etch liquid and KOH corrosive liquid to corrode successively the SiO of SOI substrate back
2with Si layer, then use hydrofluorite (HF) buffered etch liquid to remove the SiO of single crystal Si layer bottom
2buried regions, exposes single crystal Si layer, and single crystal Si layer forms bottom resonator cavity one, bottom resonator cavity one thickness be similar to incident light in this medium effective wavelength 1/2nd, but can have difference a little according to the material of superconducting nano-wire, thickness and dutycycle difference.
(f) in single crystal Si layer with the superconducting thin film of the method growing high-qualities such as magnetron sputtering, and form superconducting nano-wire by electron beam exposure and reactive ion etching (RIE).The thickness of superconducting nano-wire is generally between 4-6nm, and width is generally between 20-200nm, and the superconductor of employing is NbN, NbTiN, TaN, NbSi, Nb, W
xsi
1-xor other material.
(g) by optical exposure, sputter (or electron beam evaporation), the step such as peel off and form Au/Ti figure, as the co-planar waveguide sensing circuit of detector, for follow-up Au-Au bonding, prepare simultaneously.
(h) prepare the Si sheet of a twin polishing, first one side is prepared Al by methods such as ALD or sputters therein again
2o
3film, refractive index need to be between 1.7-2.0, thickness equal incident light in this medium effective wavelength 1/4th, need to accurately control.At another side, by optical exposure, sputter (or electron beam evaporation), the step such as peel off and form Au/Ti figure.
(i) by the method for Au-Au bonding, the final air resonance chamber, upper strata that forms, the thickness in air resonance chamber, upper strata can determine by controlling the thickness of both sides Au/Ti layer, be similar to 1/4th of lambda1-wavelength, according to the material of superconducting nano-wire, thickness and dutycycle difference, have difference a little.But need the variation of forethought Au-Au bonding front and back thickness.
Be illustrated in figure 2 the superconducting nano-wire single-photon detector that the second of the present invention has strong absorbing structure, comprise metallic film catoptron 8, the upper strata resonator cavity 9 that metallic film catoptron 8 belows have transparent dielectric material to form, resonator cavity 9 belows in upper strata are superconducting nano-wire 2 10, superconducting nano-wire 2 10 belows are epitaxy single-crystal Si layer 11, epitaxy single-crystal Si layer 11 below are Si substrate 2 12, Si substrate 2 12 has bottom resonator cavity 2 13 towards extension single crystal Si layer 11, and there is antireflection film 2 14 Si substrate 2 12 belows.
The principle of the second structure and the first structure raising photonic absorbance is just the same, just between superconducting nano-wire and the incident medium of light, the second structure than the first structure many a resonator cavity, and catoptron consists of metallic film rather than Bragg mirror, but simulation result shows, if do not consider the loss of incident light in metallic film, the absorptivity of two kinds of structures is identical.
As shown in Figure 4, the preparation process of the second structure comprises the steps:
(a) prepare the Si sheet of a twin polishing, the method for optical exposure, reactive ion etching (RIE) for the one side method of traditional bulk silicon etching (or with) carves groove therein, and the thickness of groove needs accurate control.
(b) prepare SOI substrate, obtain in advance the precise thickness of needed epitaxy single-crystal Si layer by emulation, the Si layer at the mechanical reduction back side, by the method for Si-Si bonding, SOI substrate be above-mentionedly with reeded Si sheet to be bonded together.
(c) with KOH corrosive liquid, corrode the back of the body Si layer of SOI substrate, then use hydrofluorite (HF) buffered etch liquid to remove SiO
2buried regions, exposes single crystal Si layer.SiO
2form upper strata resonator cavity two, the thickness of upper strata resonator cavity two needs by emulation, to optimize in advance, optimal value be similar to incident light in this medium effective wavelength 1/4th, but can have difference a little according to the material of superconducting nano-wire, thickness and dutycycle difference.
(d) in single crystal Si layer with the superconducting thin film of the method growing high-qualities such as magnetron sputtering, and form superconducting nano-wire by electron beam exposure and reactive ion etching (RIE); The methods such as the atomic layer deposition for another side (ALD) of substrate or sputter are prepared Al
2o
3film is as antireflection film, and refractive index need to be between 1.7-2.0, thickness equal incident light in this medium effective wavelength 1/4th, need to accurately control.
(e) by optical exposure, sputter (or electron beam evaporation), the step such as peel off and form Au/Ti figure, as the co-planar waveguide sensing circuit of detector; By optical exposure, sputter successively (or electron beam evaporation) SiO
2, Ti, Au and the step such as peel off and form upper strata resonator cavity and catoptron, SiO
2the thickness of dielectric layer needs accurately to control.
As shown in Figure 5, along with the increase of the periodicity p of Bragg mirror, the SNSPD photonic absorbance that above-mentioned the first has strong absorbing structure is significantly improved.When p equals 4, simulation result shows that its absorptivity approaches employing desirable reflection horizon situation (p=∞) completely very much, so in the process of preparing in reality, the periodicity of Bragg mirror is taken as 4 or comparatively suitable more than it.Reflectivity as shown in Figure 6 and transmissivity simulation result also show, along with the increase of periodicity p, the reflectivity of Bragg mirror is increased really, approaches desirable reflecting surface, thereby reduce the transmissivity of total, the absorptivity of final nano wire is improved.
Fig. 7 is above-mentioned two kinds and has the SNSPD photonic absorbance of strong absorbing structure and the comparison of existing other technology.Curve in figure " 1 " represents above-mentioned two kinds of structures; Curve " 2 " represents E.A.Daul er et al., " Superconducting nanowire single photon detectors, " IEEE PhotonicsConference (PHO), 2011. structures of recording; Curve " 3 " represents B.Baek et al., " Superconducting nanowire single-photon detector in an optical cavityfor front-side illumination; " Appled Physics Letters, vol.95, p.191110 2009. structures of recording; Curve " 4 " represents K.M.Rosfjord et al., " Nanowire single-photon detector with an integrated optical cavityand anti-reflection coating; " Optics Express, vol.14, the structure that pp.527 – 534,2006. records; Curve " 5 " and " 6 " represent respectively not the absorptivity that the NbN nano wire with any additional structure obtains under backlight and front irradiation condition, and the substrate of employing is the most frequently used Sapphire Substrate.In simulation process, do not consider the loss (be less than 4%) of light in Au metallic mirror, if eliminate the loss of this part, can replace metallic film with the higher Bragg mirror of periodicity.
The emulation that Fig. 5-7 are all and optimization are only for the most frequently used 1550nm communication wavelengths, and the superconductor of employing is NbN, and incident light is normally incident in nano wire, and electric field polarization direction is parallel to the direction of nano wire.The thickness of NbN nano wire is 4nm, and simulation result demonstration, and absorptivity is only relevant with the dutycycle of NbN nano wire, and irrelevant with the width of nano wire itself.From relatively can being clear that of simulation result, under same dutycycle condition, two kinds of structure absorptivities that the present invention proposes are significantly higher than existing all technology at present, can just can realize the photonic absorbance close to 100% with low-down nano wire dutycycle (25% left and right), this reduces the difficulty of electron beam exposure step in the fabricate of nanowires process greatly, and this is especially for more favourable the preparation of superfine nanowire (width is below 50nm).In addition, guaranteeing under the condition of same large effective detector area, the half when total length of the nano wire needing due to us only has 50% dutycycle, so the peak count rate of detector can promote one times, the probability that defect occurs in preparation process is reduced to half.
Claims (1)
1. a method of preparing the high speed SNSPD with strong absorbing structure, described SNSPD comprises bottom Si substrate one (1), at bottom Si substrate one (1), deposits multilayer Si/SiO
2the Bragg mirror (2) that cycle arranges and forms, Bragg mirror (2) top is provided with the bottom resonator cavity one (3) that epitaxy single-crystal Si forms, in bottom resonator cavity one (3) top, there is superconducting nano-wire one (4), on superconducting nano-wire one (4), there is air resonance chamber, upper strata (5), there is Si sheet (6) top, air resonance chamber, upper strata (5), on Si sheet (6), there is antireflection film one (7)
It is characterized in that, comprise the steps:
(a) prepare SOI substrate, by emulation, obtain in advance the precise thickness of needed epitaxy single-crystal Si layer, the Si layer at the mechanical reduction back side;
(b) oxidation SOI substrate, controls SiO in process
2thickness;
(c) with CVD method growth polycrystalline Si layer, and partial oxidation Si layer, SiO obtained
2layer, n time so repeatedly, obtains the Si/SiO in n+1 cycle
2bragg mirror;
(d) by the method for Si-Si bonding, above-mentioned SOI substrate and another Si sheet are bonded together, as new substrate;
(e) with buffered hydrofluoride acid and KOH corrosive liquid, corrode successively respectively the SiO of SOI substrate back
2with Si layer, then with buffered hydrofluoride acid, remove the SiO of single crystal Si layer bottom
2buried regions, exposes single crystal Si layer;
(f) growth of superconductive film in single crystal Si layer, and form superconducting nano-wire by electron beam exposure and reactive ion etching;
(g) above superconducting nano-wire, make Au/Ti figure, as the co-planar waveguide sensing circuit of detector, for follow-up Au-Au bonding, prepare simultaneously;
(h) prepare the Si sheet of a twin polishing, first one side is prepared Al with ALD or sputtering method therein again
2o
3film, at another side, makes Au/Ti figure;
(i) by the method for Au-Au bonding, finally form air resonance chamber, upper strata, the thickness in air resonance chamber, upper strata determines by controlling the thickness of both sides Au/Ti layer.
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| CN103840035B (en) * | 2014-03-20 | 2016-03-16 | 中国科学院上海微系统与信息技术研究所 | Reduce method and the device of the extrinsic dark counting of nanowire single photon detector part |
| CN104064631B (en) * | 2014-07-15 | 2016-08-31 | 中国科学院上海微系统与信息技术研究所 | Reduce method and the device of the extrinsic dark counting of superconducting nano-wire single-photon detectors |
| CN104091883A (en) * | 2014-07-15 | 2014-10-08 | 中国科学院上海微系统与信息技术研究所 | Superconductive nanowire single photon detector based on dielectric film reflector |
| CN104167452B (en) * | 2014-08-12 | 2016-03-30 | 南京大学 | A kind of superconducting single-photon detector with phase grating and preparation method thereof |
| CN106549098B (en) * | 2015-09-17 | 2019-12-31 | 中国科学院上海微系统与信息技术研究所 | Narrow-band absorption superconducting nanowire single photon detector |
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| CN105870315A (en) * | 2016-04-05 | 2016-08-17 | 南京大学 | Polarization-sensitive efficient superconducting nanowire single photon detector and design method therefor |
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| CN110931573B (en) * | 2019-10-31 | 2021-04-16 | 山东大学 | High-efficiency superconducting nanowire single-photon detector without polarization selection and preparation method thereof |
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| CN1979901A (en) * | 2005-12-02 | 2007-06-13 | 中国科学院半导体研究所 | Efficient adjustable optical detector with double absorbing region structure |
| CN101895060A (en) * | 2010-06-10 | 2010-11-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multiband silicon-based microdisk mixing laser device thereof and preparation method thereof |
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