CN102630350A - Repair method and apparatus of light emitting diode using quantum dot coating - Google Patents
Repair method and apparatus of light emitting diode using quantum dot coating Download PDFInfo
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- 230000008439 repair process Effects 0.000 title claims abstract description 32
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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Abstract
The present invention relates to a repair method and apparatus of a light emitting diode for improving a yield rate and repairing a light emitting diode which is selected as a defective product into a high-quality light emitting diode of which the emission color or brightness is improved, by measuring an emission property value of a manufactured light emitting diode and forming a quantum dot layer on the light emitting diode which is selected as the defective product. According to one aspect of the present invention, the repair method of the light emitting diode comprises the steps of: measuring the emission property value of the light emitting diode; determining the corresponding light emitting diode of which the measured emission property value is out of a target range as a defective light emitting diode; and forming a quantum dot layer on a top layer of the defective light emitting diode.
Description
Technical field
The present invention relates in general to and uses the quantum spot printing to cover the method and apparatus of repairing light-emitting diode (LED); And more specifically; Relate to and use a kind of quantum dot to apply the method and apparatus of repairing LED; It can be repaired LED and LED is changed into the emission color with raising or the satisfactory product of brightness through on the LED that is classified as faulty goods by the emission characteristics value of measuring LED, forming quantum dot layer, thus the output of raising LED.
Background technology
LED is based on the nitride-based semiconductor (such as GaN) of III-V compound semiconductor and be configured.Light-emitting diode (LED) is configured through p type nitride semiconductor layer and n type nitride semiconductor layer are combined basically; Wherein, p type nitride semiconductor layer and n type nitride semiconductor layer form through utilizing p type or n type doping impurity nitride-based semiconductor.The recombination rates in electronics and hole increases through between p type nitride semiconductor layer and n type nitride semiconductor layer, placing active layer, thereby improves the light characteristic of LED.
As shown in Figure 1, typical LED is constructed to make p type nitride semiconductor layer and n type nitride semiconductor layer to be connected to outer electrode respectively.When electric power was applied to two electrodes, LED can launch the light of visible wavelength.
In addition; Recently; In order to improve light characteristic or to change the color of being launched, to have attempted quantum dot layer suitably being inserted in the basic LED structure in place, this basic LED structure comprises p type nitride semiconductor layer, active layer and n type nitride semiconductor layer.
In addition, as shown in Figure 2, can be configured through utilizing fluorescence coating to apply the LED that above-mentioned sandwich construction forms, and can improve light characteristic.LED through utilizing quantum dot layer coated with multiple layer structure to form can be configured, and can change the color of emission or improve light characteristic.For example,, be used to carry out the quantum dot layer of launching through utilization and apply LED before, can make the LED that has utilizing the quantum dot layer coating to launch the structure of blue light before become white light emission LED with yellow wavelengths with reference to figure 3 structures.
Except the basic structure that comprises p type nitride semiconductor layer, active layer and n type nitride semiconductor layer, LED can also be to construct quantum dot layer in the structure that place suitably is inserted in the above-mentioned LED structure.Versicolor high-brightness LED can be constructed through the outside that utilizes fluorescence coating or quantum dot layer to apply uppermost semiconductor layer.
Yet; When electric power is applied to the LED that is produced and the LED production period with various said structures and when in the quality test stage, using photoelectric detector to measure the emissive porwer from the light of the LED emission of being produced; As shown in Figure 4, possibly there is the LED that is confirmed as defective LED.Because the price of the yield effect LED of LED so be necessary to be confirmed as color or the light characteristic of defective LED and LED can be used through raising, reduces the quantity of faulty goods, the feasible LED that has high emission efficiency with low-cost production.
Summary of the invention
Technical task
Therefore; Made the present invention in view of the problems referred to above that occur in the prior art; And the object of the invention is to provide a kind of quantum spot printing that uses to cover the method and apparatus of repairing LED; It can have the emission color that improved or the satisfactory product of brightness through quantum dot layer being applied to be classified as to repair LED on the LED of faulty goods and LED changed into through the emission characteristics value of measuring LED, thereby improves the output of LED.
Solution
In order to accomplish above purpose, the present invention provides a kind of method of repairing light-emitting diode, and this method comprises: the emission characteristics value of measuring LED; Confirm that the depart from objectives LED of scope of measured emission characteristics value is defective LED; And in the superiors of defective LED, form quantum dot layer.
The emission characteristics value comprises the digital value of color or brightness.
Forming quantum dot layer comprises through mixing in the superiors that the quantum dot that formed by predetermined semiconductor nanocrystal and the formed solution of decentralized medium is applied to defective LED and drying solution.
The formation quantum dot layer comprises: measure when defective LED move from defective LED and launch and the emission characteristics value through the light of the quantum dot unit of selection from the quantum dot mask (quantum dot mask) that is formed with a plurality of quantum dots unit; Through the emission characteristics value and the target zone of the light through the quantum dot unit confirm to repair quantum dot more; And use and the corresponding quantum dot mixed solution of determined reparation quantum dot and in the superiors of defective LED, form quantum dot layer.
Confirm repairing quantum dot comprises: if the measured emission characteristics value of the light through the quantum dot unit drops in the target zone, the quantum dot of then confirming corresponding selected quantum dot unit is for repairing quantum dot; And if the measured emission characteristics value of the light through the quantum dot unit scope that departs from objectives, then carry out control, make and measure the emission characteristics value relevant once more with another quantum dot unit of quantum dot mask.
The emission characteristics value of measuring light comprises measurement from the defective LED emission and the emission characteristics value of the light of a plurality of quantum dots unit through having sandwich construction in order, and said a plurality of quantum dots unit is selected from each in a plurality of quantum dot masks.
Confirm repairing quantum dot comprises: if the measured emission characteristics value of the light through a plurality of quantum dots unit drops in the target zone, confirm that then the quantum dot that in the combination of the quantum dot unit that is selected from a plurality of quantum dot masks, uses is to repair quantum dot; And if the measured emission characteristics value of the light through a plurality of quantum dots unit scope that departs from objectives; Then carry out control; Make and measure once more and the relevant emission characteristics value of a plurality of corresponding quantum dot element that it is one or more to change in said a plurality of quantum dots unit that said a plurality of corresponding quantum dot elements are selected from a plurality of quantum dot masks differently with sandwich construction.
Forming quantum dot layer comprises the corresponding quantum dot mixed solution of combination of the quantum dot unit that uses and be confirmed as the reparation quantum dot and in the superiors of defective LED, forms quantum dot layer.
Form quantum dot layer and comprise that use forms the quantum dot layer with sandwich construction with being confirmed as the corresponding quantum dot mixed solution in a plurality of quantum dots unit of repairing quantum dot respectively in the superiors of defective LED.
In order to accomplish above purpose, the present invention provides a kind of equipment of repairing light-emitting diode, comprising: photoelectric detection system is used to measure the emission characteristics value of LED; Confirm device, be used for confirming that the depart from objectives LED of scope of measured emission characteristics value is defective LED; And the quantum dot coating unit, be used in the superiors of defective LED, forming quantum dot layer.
This equipment further comprises: the quantum dot mask is constructed to make on the quantum dot mask, form a plurality of quantum dots unit; And repair controller, be used for through will comparing with target zone to confirm to repair quantum dot, and control quantum spot printing coating device from the emission characteristics value of the light of defective LED emission and the quantum dot unit through being selected from the quantum dot mask; Wherein, the quantum dot coating unit uses with the corresponding quantum dot mixed solution of determined reparation quantum dot and in the superiors of defective LED, forms quantum dot layer.
Repair controller comprises: quantum dot is confirmed the unit; If the measured emission characteristics value of the light through the quantum dot unit drops in the target zone; The quantum dot that then is used for confirming to use in corresponding selected quantum dot unit is for repairing quantum dot; And if the emission characteristics value of the light through the quantum dot unit scope that departs from objectives, then produce the control signal that the emission characteristics value is measured in indication once more; And mobile control unit, be used for carrying out control and make another quantum dot unit of quantum dot mask be positioned at radiative direction from defective LED in response to control signal.
This equipment further comprises second photoelectric detection system of the emission characteristics value that is used to measure the light that passes through the quantum dot unit.
The quantum dot mask comprises a plurality of quantum dot masks, and a plurality of quantum dot masks are constructed to make and form a plurality of quantum dots unit in the quantum dot mask each; And repair controller through relatively from defective LED emission and in order the measured emission characteristics value of the light of a plurality of quantum dots unit through having sandwich construction confirm the reparation quantum dot, said a plurality of quantum dots unit is selected from each in a plurality of quantum dot masks.
If the emission characteristics value of the light through a plurality of quantum dots unit drops in the target zone; Then quantum dot confirms that the quantum dot of confirming in the combination of the quantum dot unit that is selected from a plurality of quantum dot masks, to use in the unit is to repair quantum dot; And if the measured emission characteristics value of the light through the quantum dot unit scope that departs from objectives, then produce second control signal that the emission characteristics value is measured in indication once more; And mobile control unit controls moving of a plurality of quantum dot masks in response to second control signal, makes to have sandwich construction and comprise that the corresponding quantum dot element of the one or more altered quantum dot unit that is selected from said a plurality of quantum dot masks is positioned on the radiative direction of defective LED differently.
The quantum dot coating unit uses with the corresponding quantum dot mixed solution of combination that is confirmed as the quantum dot unit of repairing quantum dot and in the superiors of defective LED, forms quantum dot layer.
Effect
The quantum dot coating unit uses with being confirmed as the corresponding quantum dot mixed solution in quantum dot unit of repairing quantum dot and in the superiors of defective LED, forms the quantum dot layer with sandwich construction.
Description of drawings
From the following detailed description that combines accompanying drawing, will be more clearly understand above-mentioned and other purposes, feature and advantage of the present invention, wherein:
Fig. 1 shows the diagrammatic sketch of instance of the structure of typical LED;
Fig. 2 shows the diagrammatic sketch of another instance of the structure of typical LED;
Fig. 3 shows the diagrammatic sketch of another instance of the structure of typical LED;
Fig. 4 shows the diagrammatic sketch that the typical case of the emissive porwer of LED measures;
Fig. 5 shows the diagrammatic sketch according to the LED prosthetic appliance of embodiment of the present invention;
Fig. 6 shows the diagrammatic sketch according to the quantum dot mask of embodiment of the present invention;
Fig. 7 shows the diagrammatic sketch of measurement of emission characteristics of the quantum dot mask of use another execution mode according to the present invention;
Fig. 8 is the block diagram according to the repair controller of embodiment of the present invention;
Fig. 9 shows the flow chart according to the operation of the LED prosthetic appliance of embodiment of the present invention; And
Figure 10 shows the diagrammatic sketch of typical CIE color coordinate system.
The preferred embodiment for the present invention
Should wherein, in all different drawings, use identical reference number with reference to accompanying drawing to represent same or analogous parts at present.
Fig. 5 shows the diagrammatic sketch according to the LED prosthetic appliance 10 of embodiment of the present invention.
With reference to figure 5, can comprise quantum dot mask 12, photoelectric detector 13, quantum dot distributor 14 and repair controller 15 according to the LED prosthetic appliance 10 of embodiment of the present invention.LED prosthetic appliance 10 can further comprise transmitter system 11.
The invention discloses LED prosthetic appliance 10; This LED prosthetic appliance applies electric power in the LED quality test stage of being produced; Use photoelectric detector 13 to measure from the emission characteristics value of the light of LED emission; If measured emission characteristics value (digital value of color or the brightness) scope that departs from objectives is then used predetermined definite device to confirm that LED is defective LED, and is used predetermined quantum spot printing coating device in the superiors of the layered semiconductor structure of associated disadvantages LED, to form quantum dot layer; Improving, thereby repair LED and LED is become the emission color with raising or the satisfactory product of brightness such as the color of defective LED or the emission characteristics of brightness.
In Fig. 5, each defective LED of emission characteristics value (digital value of color or the brightness) scope that all departs from objectives can be sent to the position of quantum dot mask 12 belows through conveying system 11.
As shown in Figure 7, two the quantum dot masks 71 and 72 with sandwich construction can be used as quantum dot mask 12.For example; A plurality of quantum dot A, B and the C (Q, R and S) that present the different emission characteristic when light during through the quantum dot mask can be formed on each of two quantum dot masks 71 and 72, and can change the emission wavelength characteristics of light of the combination of the quantum dot unit (being selected from each mask 71 and 72) through having sandwich construction.Here, although provided the instance that uses two quantum dot masks 71 and 72, the present invention is not limited to this, does not get rid of and uses three or more a plurality of quantum dot masks.
Based on measuring the result's (these results measure through photoelectric detector 13) who launches and passed through the light of quantum dot mask 12 or a plurality of quantum dot masks 71 and 72 from defective LED; Repair controller 15 will be compared with the goal-selling scope by photoelectric detector 13 measured emission characteristics values; Thereby confirm one or more reparation quantum dots, control quantum dot distributor 14 then.
Quantum dot distributor 14 can use with by the repair controller corresponding quantum dot mixed solution of 15 determined reparation quantum dots through forming quantum dot layer in the superiors that the quantum dot mixed solution are applied to defective LED.
Quantum dot distributor 14 can comprise and according to a plurality of containers of the quantum dot mixed solution of different emission characteristic (for example holding; Container A ' ~ F '); And, carry out coating through according to selecting corresponding quantum dot mixed solution by repair controller 15 determined reparation quantum dots and corresponding quantum dot mixed solution being applied in the superiors of defective LED.Mix mutually in the container that formed solution can be included in quantum dot distributor 14 as the quantum dot mixed solution through the quantum dot that will form and decentralized medium (for example, toluene, hexane etc.) by compound semiconductor nanocrystal such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe and HgTe crystal.The quantum dot mixed solution can use additive method to form.When the quantum dot mixed solution in will being included in and repairing the corresponding container of quantum dot is applied to the superiors of defective LED, can realize improving the effect of the emission characteristics of defective LED based on corresponding quantum dot emission wavelengths characteristic.After the quantum dot mixed solution is applied to the superiors of defective LED, can use the predetermined dry quantum dot mixed solution of drying equipment.In case of necessity, can the insulating material based on transparent resin be applied to the quantum dot mixed solution.
Fig. 8 is the block diagram according to the repair controller 15 of embodiment of the present invention.With reference to figure 8, comprise that according to the repair controller 15 of embodiment of the present invention quantum dot confirms unit 21 and mobile control unit 22.
Quantum dot confirm unit 21 will from defective LED emission and the emission characteristics value (this emission characteristics value is by photoelectric detector 13 measurements) of the light through quantum dot mask 12 or a plurality of quantum dot mask 71 and 72 compare with the goal-selling scope; And whether the scope of departing from objectives confirms to repair accordingly quantum dot according to measured emission characteristics value, perhaps produces the control signal that the emission characteristics of defective LED is measured in indication once more.
Embodiment of the present invention
With reference to the flow chart of figure 9, below will describe operation in detail according to the LED prosthetic appliance 10 of embodiment of the present invention.
At first; At the LED of manufacturing in the quality test stage; Electric power is applied to LED; And use photoelectric detector 13 or another photoelectric detection system to measure emission characteristics value, make to use and predeterminedly confirm that device sub-elects defective LED, the respective color of said defective LED or the digital value of the brightness scope A that departs from objectives at step S110 from the light of LED.For example; Shown in figure 10, when target zone be set to scope A (in this scope A, the representative typical Show Color coordinate Commission Internationale De L'Eclairage (CIE) color coordinate system at particular color (for example; White) locate to appear certain luminance) time; If by the measured emission characteristics value of photoelectric detection system (for example, the measured color or the digital value of the brightness) scope that departs from objectives A, then LED possibly not be denoted as product for sale and possibly be dropped.
According to the present invention; Even when sub-electing the defective LED of the emission characteristics value that has in the repair coverage B under the situation of the scope A that departs from objectives when the emission characteristics value measured by photoelectric detection system; Be described below, also can defective LED repaired and become and launch the excellent product that color or brightness have improved through using prosthetic appliance 10 on associated disadvantages LED, to form quantum dot layer.
In step S120, can defective LED be transferred to the position of quantum dot mask 12 belows through transmitter system 11.As shown in Figure 6; Form on the quantum dot mask 12 when light through the time present the different emission characteristic a plurality of quantum dots unit (for example; A ~ F); And carry out to transmit, make one of quantum dot unit on the quantum dot mask 12 can be positioned at the top of defective LED, so as to measure by defective LED emission and the emission characteristics value of the light through this quantum dot unit.
When one of quantum dot unit on the quantum dot mask 12 is positioned at defective LED top, in step S130, make defective LED luminous through electric power being applied to defective LED.In this case, defective LED can be fixed to the have preset terminal predetermined assembly fixture (jig) of (electric power can be provided through this preset terminal), and this defective LED can be luminous.
Correspondingly, in step S140, photoelectric detector 13 can measure from defective LED emission and through emission characteristics value by the light of quantum dot mask 12 selected quantum dot unit.Photoelectric detector 13 can produce the information (digital value) about the color of input light through the spectrum (perhaps wavelength) of analyzing input light, perhaps can produce the information (digital value) about the brightness of input light through analyzing the input light intensity.
In step S150; Based on measure from defective LED emission and the result (this measurement is undertaken by photoelectric detector 13) of the light through quantum dot mask 12, repair controller 15 will be compared with the goal-selling scope by photoelectric detector 13 measured emission characteristics values.For example; In step S170; Through comparing the emission characteristics value and the goal-selling scope of light; If from defective LED emission and the emission characteristics value (this emission characteristics value is measured by photoelectric detector 13) of the light of the quantum dot unit through quantum dot mask 12 be confirmed as and do not depart from corresponding target zone, then the quantum dot of repair controller 15 confirms that unit 21 can confirm that the quantum dot of selected quantum dot unit is corresponding reparation quantum dot.
Through comparing emission characteristics value and target zone; If from defective LED emission and the emission characteristics value (this emission characteristics value is through photoelectric detector 13 measurements) of the light through quantum dot mask 12 confirm as and depart from the goal-selling scope, then quantum dot confirms that unit 21 can produce the control signal that the emission characteristics value of defective LED is measured in indication once more.Here, shown in figure 10, target zone can be the range of digital values of being scheduled to, thereby makes the emission characteristics value can drop in the target zone A in the CIE color coordinate system.In step S160, mobile control unit 22 can make another quantum dot unit of quantum dot mask 12 be positioned on the luminous direction of another defective LED in response to confirming that from quantum dot the control signal of unit 21 controls the rotation of quantum dot mask 12.
Correspondingly; When another quantum dot unit of quantum dot mask 12 is positioned on the radiative direction of defective LED; Can repeat the process of above-mentioned definite reparation quantum dot, this process comprises that photoelectric detector 13 measures the step of emission characteristics values, repair controller 15 with the step of emission characteristics value and target zone comparison and the step that switches to another quantum dot unit of quantum dot mask 12.
Meanwhile; As shown in Figure 7; When using a plurality of quantum dot masks 71 and 72; In step S140, photoelectric detector 13 can measure from defective LED emission and in order through having sandwich construction and being selected from each the emission characteristics value of light of quantum dot unit a plurality of quantum dot masks 71 and 72 that are arranged on defective LED top.Here; In step S170; Through the emission characteristics value is compared with the goal-selling scope; If from defective LED emission and the emission characteristics value (this emission characteristics value is measured by photoelectric detector 13) of the light of the combination of the quantum dot unit through a plurality of quantum dot masks 71 and 72 be confirmed as the scope of not departing from objectives, then the quantum dot of repair controller 15 confirms that it is reparation quantum dot accordingly that the quantum dot of combination of the quantum dot unit of a plurality of quantum dot masks 71 and 72 can be confirmed to be selected from unit 21.
Through more measured emission characteristics value and corresponding target zone; If from defective LED emission and the emission characteristics value (this emission characteristics value is by photoelectric detector 13 measurements) of the light of the combination of the quantum dot unit through being selected from a plurality of quantum dot masks 71 and 72 be confirmed as and depart from the goal-selling scope, then quantum dot confirms that unit 21 can produce the control signal that the emission characteristics value of defective LED is measured in indication once more.Here, shown in figure 10, target zone can be predetermined range of digital values, makes the emission characteristics value can drop in the target zone A in the CIE color coordinate system.In step S160; Mobile control unit 22 can be in response to control moving of a plurality of quantum dot masks 71 and 72 in the control signal of confirming unit 21 from quantum dot; Make the corresponding quantum dot element with sandwich construction be positioned on the radiative direction of defective LED, wherein said corresponding quantum dot element is selected from a plurality of quantum dot masks 71 and 72 one or more with in the change quantum dot unit differently.Here; Only optionally change the quantum dot unit of bottom through only rotating the bottom mask in a plurality of quantum dot masks 71 and 72; The only alternative quantum dot unit that changes top through only rotating top mask 72 is perhaps through rotating all a plurality of quantum dot masks 71 and 72 and optionally change the quantum dot unit of both sides.
Correspondingly; When have corresponding quantum dot element sandwich construction and quantum dot unit that comprise the one or more changes that are selected from a plurality of quantum dot masks 71 and 72 when being positioned on the radiative direction of defective LED differently; Can repeat the process of above-mentioned definite reparation quantum dot, this process comprises that photoelectric detector 13 measures step that the step of emission characteristics values, repair controller 15 compare emission characteristics value and target zone and the step that switches to another quantum dot unit of quantum dot mask 12.
Quantum dot confirms that unit 21 has been confirmed to repair quantum dot in above process after, in step S180, can the information about corresponding reparation quantum dot be sent to quantum dot distributor 14.
In step S190, quantum dot distributor 14 can be according to utilizing corresponding quantum dot mixed solution to come the superiors of coat the defect LED about the information of being confirmed unit 21 determined reparation quantum dots by quantum dot.Quantum dot distributor 14 can comprise a plurality of containers that hold according to the quantum dot mixed solution of different emission characteristic; Container A for example ' ~ F ', and through according to confirming by quantum dot that unit 21 determined reparation quantum dots are selected corresponding quantum dot mixed solution and through carrying out coating in the superiors that corresponding quantum dot mixed solution are applied to defective LED.For example, confirm unit 21 when quantum dot and confirm quantum dot unit A when repairing quantum dot that quantum dot distributor 14 can be through from quantum dot mixed solution container A ' the corresponding solution of discharge and the superiors that corresponding solution is applied to defective LED are carried out coating.
In addition; When a plurality of quantum dot masks 71 of use as shown in Figure 7 and 72; Quantum dot confirm unit 21 can confirm for example to comprise bottom mask 71 quantum dot unit A and top mask 72 quantum dot unit Q the quantum dot unit be combined as the reparation quantum dot; In this case, quantum dot distributor 14 can be carried out coating through the superiors that discharge corresponding solution from relevant quantum dot mixed solution container and will this corresponding solution be applied to defective LED.In this case, quantum dot distributor 14 can be confirmed as in the superiors of defective LED that the corresponding quantum dot mixed solution in quantum dot unit (for example, unit A and Q) of repairing quantum dot (for example, solution A ' and Q ') is applied to sandwich construction.That is, at first can use the quantum dot mixed solution A ', and can quantum dot mixed solution Q ' be applied to this place then.Although not shown container Q ' can add corresponding container in Fig. 5.
After having used the quantum dot mixed solution as described above, can use the predetermined dry applied solution of drying equipment.In case of necessity, can form corresponding quantum dot layer through the quantum dot mixed solution that coating has based on the insulating material of transparent resin.
Use the quantum spot printing to cover the method and apparatus of repairing LED according to being used to; Through quantum dot layer is applied on the LED; Divided the LED elect faulty goods as to be repaired and become emission color or the satisfactory product of brightness, thereby improved the output of LED with raising.
Although disclose preferred implementation of the present invention for illustrative purposes, it will be apparent to one skilled in the art that various modifications, interpolation and replacement all are feasible under the prerequisite that does not break away from disclosed scope of the present invention of accompanying claims and spirit.
Claims (17)
1. method of repairing light-emitting diode (LED) comprising:
Measure the emission characteristics value of light-emitting diode (LED);
Confirm that the depart from objectives LED of scope of measured emission characteristics value is defective LED; And
In the superiors of said defective LED, form quantum dot layer.
2. method according to claim 1, wherein, said emission characteristics value comprises the digital value of color or brightness.
3. method according to claim 1; Wherein, forming said quantum dot layer comprises mixing in the superiors that formed solution is applied to said defective LED with decentralized medium through the quantum dot that is formed by predetermined semiconductor nanocrystal and dry said solution.
4. method according to claim 1 wherein, forms said quantum dot layer and comprises:
Measure when said defective LED operation from said defective LED emission and passed through the emission characteristics value of the light of quantum dot unit, said quantum dot unit is formed with in the quantum dot mask of a plurality of quantum dots unit from it to be selected;
The said emission characteristics value of the light through said quantum dot unit is compared to confirm to repair quantum dot with said target zone; And
Use and the corresponding quantum dot mixed solution of determined reparation quantum dot, in the superiors of said defective LED, form said quantum dot layer.
5. method according to claim 4, wherein, confirm that said reparation quantum dot comprises:
If the measured emission characteristics value of the light through said quantum dot unit drops in the said target zone, confirm that then the quantum dot of corresponding selected quantum dot unit is said reparation quantum dot; And
If the measured emission characteristics value of the light through said quantum dot unit departs from said target zone, then carry out control, make and measure the emission characteristics value relevant once more with another quantum dot unit of said quantum dot mask.
6. method according to claim 4; Wherein, The said emission characteristics value of measuring light comprises that measurement from the said defective LED emission and the emission characteristics value of the light of a plurality of quantum dots unit through having sandwich construction in order, selects in said a plurality of quantum dots unit each from a plurality of quantum dot masks.
7. method according to claim 6, wherein, confirm that said reparation quantum dot comprises:
If the measured emission characteristics value of the light through said a plurality of quantum dots unit drops in the said target zone, confirm that then the quantum dot that in the combination of a plurality of quantum dots unit that is selected from said a plurality of quantum dot masks, uses is said reparation quantum dot; And
If the measured emission characteristics value of the light through said a plurality of quantum dots unit departs from said target zone; Then carry out control; Make and to measure once more and the relevant emission characteristics value in corresponding a plurality of quantum dots unit that said corresponding a plurality of quantum dots unit is selected from said a plurality of quantum dot mask to change one or more in said a plurality of quantum dots unit differently with sandwich construction.
8. method according to claim 7; Wherein, forming said quantum dot layer comprises the corresponding quantum dot mixed solution of combination of the said a plurality of quantum dots unit that uses and be confirmed as said reparation quantum dot and in the superiors of said defective LED, forms quantum dot layer.
9. method according to claim 7; Wherein, form said quantum dot layer and comprise that use forms the quantum dot layer with sandwich construction respectively with the corresponding quantum dot mixed solution in said a plurality of quantum dots unit that is confirmed as said reparation quantum dot in the superiors of said defective LED.
10. equipment that is used to repair LED comprises:
Photoelectric detection system is used to measure the emission characteristics value of LED;
Confirm device, be used for confirming that the depart from objectives LED of scope of measured emission characteristics value is defective LED; And
The quantum dot coating unit is used in the superiors of said defective LED, forming quantum dot layer.
11. equipment according to claim 10 further comprises:
The quantum dot mask is constructed to make on said quantum dot mask, form a plurality of quantum dots unit; And
Repair controller; Be used for through will from said defective LED emission and the emission characteristics value of the light through the quantum dot unit selected from said quantum dot mask compare with said target zone to confirm the reparation quantum dot, and control said quantum dot coating unit;
Wherein, said quantum dot coating unit uses with the corresponding quantum dot mixed solution of determined reparation quantum dot and in the superiors of said defective LED, forms quantum dot layer.
12. equipment according to claim 11, wherein, said repair controller comprises:
Quantum dot is confirmed the unit; If being used for the measured emission characteristics value of the light through said quantum dot unit drops in the said target zone; Confirm that then the quantum dot that in corresponding selected quantum dot unit, uses is said reparation quantum dot; And if the emission characteristics value of the light through said quantum dot unit has departed from said target zone, then produce the control signal that said emission characteristics value is measured in indication once more; And
Mobile control unit is used for carrying out control in response to said control signal, makes another quantum dot unit of said quantum dot mask be positioned on the radiative direction of said defective LED.
13. equipment according to claim 12 further comprises second photoelectric detection system of the emission characteristics value that is used to measure the light through said quantum dot unit.
14. equipment according to claim 12, wherein:
Said quantum dot mask comprises a plurality of quantum dot masks, and said a plurality of quantum dot masks are constructed to make and on each of said a plurality of quantum dot masks, form a plurality of quantum dots unit; And
Said repair controller through relatively from said defective LED emission and in order the measured emission characteristics value of the light of a plurality of quantum dots unit through having sandwich construction confirm said reparation quantum dot, said a plurality of quantum dots unit is selected from each in said a plurality of quantum dot mask.
15. equipment according to claim 14, wherein:
If the emission characteristics value of the light through said a plurality of quantum dots unit drops in the said target zone; Then said quantum dot confirms that the unit confirms that the quantum dot that in the combination of a plurality of quantum dots unit that is selected from said a plurality of quantum dot masks, uses is said reparation quantum dot; And if the measured emission characteristics value of the light through said a plurality of quantum dots unit has departed from said target zone, then produce second control signal that said emission characteristics value is measured in indication once more; And
Said mobile control unit is controlled moving of said a plurality of quantum dot masks in response to said second control signal, makes the corresponding quantum dot element of the quantum dot unit after having sandwich construction and comprising the one or more changes that are selected from said a plurality of quantum dot masks differently be positioned on the radiative direction of said defective LED.
16. equipment according to claim 15; Wherein, said quantum dot coating unit uses with the corresponding quantum dot mixed solution of combination of the said a plurality of quantum dots unit that is confirmed as said reparation quantum dot and in the superiors of said defective LED, forms quantum dot layer.
17. equipment according to claim 15; Wherein, said quantum dot coating unit uses with the corresponding quantum dot mixed solution in said a plurality of quantum dots unit that is confirmed as said reparation quantum dot and in the superiors of said defective LED, forms the said quantum dot layer with sandwich construction.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0086310 | 2009-09-14 | ||
| KR1020090086310A KR101650390B1 (en) | 2009-09-14 | 2009-09-14 | Light Emitting Diode Repair Method and Apparatus using Quantum Dot Coating |
| PCT/KR2010/003232 WO2011030993A1 (en) | 2009-09-14 | 2010-05-24 | Repair method and apparatus of light emitting diode using quantum dot coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102630350A true CN102630350A (en) | 2012-08-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800515188A Pending CN102630350A (en) | 2009-09-14 | 2010-05-24 | Repair method and apparatus of light emitting diode using quantum dot coating |
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| Country | Link |
|---|---|
| JP (1) | JP2013504870A (en) |
| KR (1) | KR101650390B1 (en) |
| CN (1) | CN102630350A (en) |
| TW (1) | TW201110406A (en) |
| WO (1) | WO2011030993A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110137220A (en) * | 2019-04-18 | 2019-08-16 | 佛山市柔浩电子有限公司 | Micro- light emitting diode quantum dot display screen method for repairing and mending |
| CN110707200A (en) * | 2019-09-04 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot light emitting device patterning method and quantum dot light emitting device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101856533B1 (en) * | 2011-03-28 | 2018-05-14 | 삼성전자주식회사 | Apparatus for inspecting light emitting device and inspecting method using the same |
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| US20040046178A1 (en) * | 2002-08-29 | 2004-03-11 | Citizen Electronics Co., Ltd. | Light emitting diode device |
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| JP2004214476A (en) * | 2003-01-07 | 2004-07-29 | Rohm Co Ltd | Method for inspecting chip type semiconductor light-emitting device |
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| KR101101132B1 (en) * | 2007-11-23 | 2012-01-12 | 삼성엘이디 주식회사 | LED inspection apparatus and inspection method using the same |
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2009
- 2009-09-14 KR KR1020090086310A patent/KR101650390B1/en active IP Right Grant
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2010
- 2010-05-19 TW TW99115970A patent/TW201110406A/en unknown
- 2010-05-24 WO PCT/KR2010/003232 patent/WO2011030993A1/en active Application Filing
- 2010-05-24 JP JP2012528732A patent/JP2013504870A/en active Pending
- 2010-05-24 CN CN2010800515188A patent/CN102630350A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040046178A1 (en) * | 2002-08-29 | 2004-03-11 | Citizen Electronics Co., Ltd. | Light emitting diode device |
| US20070117450A1 (en) * | 2005-11-18 | 2007-05-24 | Truxes William W | Novel jack form LED lamp package and caddy |
| CN101498416A (en) * | 2008-02-02 | 2009-08-05 | 绎立锐光科技开发(深圳)有限公司 | Emergent light color adjustable light source and method thereof |
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| CN110137220A (en) * | 2019-04-18 | 2019-08-16 | 佛山市柔浩电子有限公司 | Micro- light emitting diode quantum dot display screen method for repairing and mending |
| CN110707200A (en) * | 2019-09-04 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot light emitting device patterning method and quantum dot light emitting device |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101650390B1 (en) | 2016-08-25 |
| WO2011030993A1 (en) | 2011-03-17 |
| JP2013504870A (en) | 2013-02-07 |
| TW201110406A (en) | 2011-03-16 |
| KR20110028737A (en) | 2011-03-22 |
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Application publication date: 20120808 |