CN102612747B - 半导体模块 - Google Patents
半导体模块 Download PDFInfo
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- CN102612747B CN102612747B CN201080052039.8A CN201080052039A CN102612747B CN 102612747 B CN102612747 B CN 102612747B CN 201080052039 A CN201080052039 A CN 201080052039A CN 102612747 B CN102612747 B CN 102612747B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000001816 cooling Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 239000003507 refrigerant Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000001465 metallisation Methods 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002826 coolant Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H01L25/071—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next and on each other, i.e. mixed assemblies
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- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
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Abstract
半导体模块(1)具备逆变电路的上臂(2)和下臂(3)。上臂(2)具有开关元件(5A)、整流元件(6A),下臂(3)具有开关元件(5B)、整流元件(6B)。上臂(2)和下臂(3)层叠成开关元件(5A、5B)彼此重叠且整流元件(6A、6B)彼此重叠。构成冷却部的制冷剂流路(21)分别沿着开关元件(5A、5B)彼此以及整流元件(6A、6B)彼此的层叠方向的两侧延伸,并在整流元件层叠部(1B)侧折返。
Description
技术领域
本发明涉及一种半导体模块,特别涉及用于电动汽车、混合动力汽车等车辆中的半导体模块。
背景技术
以往,作为用于车辆的半导体模块已知有以下的模块:例如,像JP特开2009-159815号公报中所记载的那样,在内部内置具备上臂以及下臂的串联电路,并使该臂中的半导体元件和二极管重叠。另外,通过在模块的两侧设置冷却金属且在二极管侧设置折返的冷却水路,来冷却该半导体模块。
现有技术文献
专利文献
专利文献1:日本特开2009-159815号公报
发明内容
发明要解决的问题
但是,上述现有的半导体模块存在以下的问题。即,由于二极管和半导体元件各自面积不同,因此在将不同面积的彼此重叠的情况下,在面积较小的一面(主要为二极管侧的面)上对冷却金属(散热部件)的接触面积减小,散热不能充分进行。另外,未考虑像马达锁定时这样仅特定的开关元件发热的状态,仅通过上述冷却结构无法应对。
本发明是为了解决这种技术问题而做出的,其目的在于提供一种能够提高散热效率的半导体模块。
用于解决问题的手段
本发明涉及的半导体模块具备上臂和下臂,该上臂和下臂分别具有开关元件以及整流元件,该半导体模块的特征在于,将上臂和下臂层叠成:上臂和下臂的开关元件彼此重叠,且上臂和下臂的整流元件彼此重叠。
在本发明涉及的半导体模块中,将上臂和下臂相向地层叠,以便上下臂的开关元件彼此重叠且整流元件彼此重叠,因此上下臂的开关元件彼此、整流元件彼此成为层叠结构。因此,在上下面中对散热部件的接触面积变得相同,从而热能够均等地扩散。其结果,能够提高散热效率。
本发明涉及的半导体模块具备上臂和下臂,该上臂和下臂分别具有开关元件以及整流元件,该半导体模块的特征在于,具备:开关元件层叠部,重叠上臂和下臂的开关元件彼此而形成;整流元件层叠部,重叠上臂和下臂的整流元件彼此而形成;以及冷却部,至少设置在开关元件彼此以及整流元件彼此的层叠方向的两侧,冷却开关元件层叠部以及整流元件层叠部。
在本发明涉及的半导体模块中,具备重叠上下臂的开关元件彼此而成的开关元件层叠部、和重叠上下臂的整流元件彼此而成的整流元件层叠部,因此在上下面中对散热元件的接触面积变得均等。因此,热能够均等地扩散,能够提高散热效率。另外,由于冷却部至少设置在开关元件彼此以及整流元件彼此的层叠方向的两侧,因此利用在马达锁定时上下臂不会同时发热这一点,能够使用不产生发热的一侧的臂作为散热区域。因此,能够提高马达锁定时的冷却性能,能够提高模块整体的散热效率。
在本发明涉及的半导体模块中,优选冷却部具有制冷剂和用于使制冷剂流通的制冷剂流路,制冷剂流路分别沿着开关元件彼此以及整流元件彼此的层叠方向的两侧设置,并在整流元件层叠部侧折返。在此情况下,上下臂层叠,制冷剂流路折返,因此能够实现模块整体的小型化。另外,通过在不产生发热的一侧的整流元件侧上折返制冷剂流路,而能够在开关元件层叠部中使制冷剂的温度保持低温,因此能够提高冷却作用。
发明效果
根据本发明,能够提供一种能提高散热效率的半导体模块。
附图说明
图1是表示实施方式涉及的半导体模块的俯视图。
图2是沿着图1的II-II线的截面图。
图3是沿着图1的III-III线的截面图。
图4是表示使用了半导体模块的功率控制单元的结构的电路图。
图5的(a)是表示动力运行时的升压变换器的电流流向的电路图;(b)是表示再生时的升压变换器的电流流向的电路图。
图6是表示马达锁定时的电流的流向的电路图。
图7是表示半导体模块的变形例的局部截面图。
图8是表示半导体模块的变形例的局部截面图。
图9是沿着图8的IX-IX线的概略截面图。
图10是表示凸起部的变形例的概略截面图。
附图标记说明
1:半导体模块;
1A:开关元件层叠部;
1B:整流元件层叠部;
2:上臂;
3:下臂:
4A、4B:冷却器;
5A、5B:开关元件;
6A、6B;整流元件;
21:制冷剂流路。
具体实施方式
下面,参照附图详细说明本发明的实施方式。此外,在附图的说明中对相同的要素附加相同的附图标记而省略重复说明。
图1是表示实施方式涉及的半导体模块的俯视图,图2是沿着图1的II-II线的截面图,图3是沿着图1的III-III线的截面图。本实施方式涉及的半导体模块1具备逆变电路的上臂2和下臂3。上臂2和下臂3具有相同的结构,相对于配置于它们之间的汇流条10上下对称地配置而层叠。另外,在上臂2和下臂3的层叠体的两侧设置有冷却器4A、4B。
上臂2具有多个开关元件5A、整流元件6A、以及安装开关元件5A和整流元件6A的绝缘基板7A。如图2所示,位于开关元件5A的表面侧的发射极经由焊料层8A与汇流条10电连接。位于开关元件5A的背面侧的集电极通过焊料层9A固定在绝缘基板7A上。另外,如图3所示,位于整流元件(例如二极管)6A的表面侧的阳极经由焊料层8A与汇流条10电连接。位于整流元件6A的背面侧的阴极通过焊料层9A固定在绝缘基板7A上。
绝缘基板7A为DBA(Direct Brazed Aluminum:带铝散热片)基板,具有层叠了由铝或铝合金构成的上部金属层11、由氮化铝构成的绝缘层12和由铝或铝合金构成的下部金属层13的结构。上部金属层11经由焊料层9A与开关元件5A和整流元件6A电连接。下部金属层13通过钎焊与冷却器4A接合。另外,上部金属层11经由接合线(Bonding Wire)与汇流条15电连接。
下臂3具有多个开关元件5B、整流元件6B、以及安装有开关元件5B和整流元件6B的绝缘基板7B。如图2所示,位于开关元件5B的表面侧的发射极经由焊料层8B与汇流条10电连接。位于开关元件5B的背面侧的集电极通过焊料层9B固定在绝缘基板7B上。
另外,如图3所示,位于整流元件(例如二极管)6B的表面侧的阳极经由焊料层8B与汇流条10电连接。位于整流元件6B的背面侧的阴极通过焊料层9B固定在绝缘基板7B上。绝缘基板7B具有与绝缘基板7A相同的结构。绝缘基板7B的上部金属层11经由接合线16与汇流条17电连接。下臂3通过钎焊与冷却器4B接合。
通过层叠上臂2和下臂3,而分别形成重叠开关元件5A、5B彼此的开关元件层叠部1A、和重叠整流元件6A、6B彼此的整流元件层叠部1B。
冷却器4A、4B分别设置在上臂2和下臂3的层叠方向的两侧,对开关元件层叠部1A以及整流元件层叠部1B进行冷却。这些冷却器4A、4B分别具有成型为波状的冷却叶片18、和夹着冷却叶片18而将其固定的顶板19以及底板20。
顶板19配置于与上臂2或下臂3相邻的一侧,通过钎焊固定在绝缘基板7A、7B的下部金属层13上。另一方面,底板20与顶板19相向而配置在模块的外侧。冷却叶片18、顶板19以及底板20由导热性高的铝、铜等材料构成。冷却器4A、4B内部的由冷却叶片18划分的中空部分形成用于使制冷剂流通的制冷剂流路21。
如图3所示,在整流元件层叠部1B设置有连结部4C,该连结部4C沿着上臂2和下臂3的层叠方向延伸并连结冷却器4A和冷却器4B。通过这样设置连结部4C,制冷剂流路21在整流元件层叠部1B侧折返。另外,制冷剂沿着箭头F1方向从导入口22导入,经由冷却器4A内的制冷剂流路21而在整流元件层叠部1B侧折返,在冷却器4B内的制冷剂流路21中流动,并经由排出口22排出到外部。由此,制冷剂吸收来自开关元件层叠部1A以及整流元件层叠部1B的发热,高效地冷却开关元件层叠部1A以及整流元件层叠部1B。
图4是表示使用半导体模块的功率控制单元的结构的电路图。该功率控制单元例如搭载在混合动力汽车上,并具备升压变换器24、逆变器25和电动发电机26。升压变换器24是用于进行蓄电池27的充电以及放电的直流电压变换器,具有电容器28、29、电抗器30、晶体管(开关元件)31、32、以及二极管(整流元件)33、34。
电容器28在电源线L1和接地线L2之间与蓄电池27并联连接,用于将蓄电池27的充放电电压进行平滑化。电抗器30的一端与电源线L1连接,另一端与晶体管31、32的连接点连接。晶体管31、32串联连接在电源线L3和接地线L2之间。另外,在各晶体管31、32的集电极-发射极之间分别连接有二极管33、34,以使电流从发射极侧向集电极侧流动。
晶体管31、32例如由绝缘栅双极型晶体管(IGBT:Insulated GateBipolar Transistor)构成。电容器29连接在电源线L3和接地线L2之前,起到电力缓冲器的作用。
逆变器25在升压变换器24和电动发电机26之间进行电力转换。即,逆变器25能够将从蓄电池27供给的直流电力转换为具有三个相电压(U相电压、V相电压、W相电压)的三相交流电力,并且能够将从电动发电机26供给的三相交流电力转换为直流电力。
该逆变器25具有U相臂35、V相臂36、W相臂37。U相臂35、V相臂36以及W相臂37并联连接在电源线L3和接地线L2之间。U相臂35、V相臂36以及W相臂37分别具备:串联连接的开关元件5A、5B;和与各开关元件5A、5B并联连接的整流元件(二极管)6A、6B。
另外,U相臂35、V相臂36以及W相臂37分别经由输出线L4、L5、L6连接到电动发电机26的各相线圈的与中性点相反侧的线圈端。电动发电机26例如由三相交流同步电动发电机构成,通过来自逆变器25的三相交流电压生成驱动力。另外,该电动发电机26使用发动机输出而产生三相交流电压,将所产生的三相交流电压输出到逆变器25。
图5的(a)是表示动力运行时的升压变换器的电流流向的电路图,(b)是表示再生时的升压变换器的电流流向的电路图。如图5的(a)所示,在动力运行时由蓄电池27供给的电流经由电抗器35分别流向晶体管32和二极管33(参照箭头F2)。另一方面,如图5的(b)所示在再生时,三相交流电流经由晶体管31和二极管34而流向电抗器30(参照箭头F3)。
图6是表示马达锁定时的电流的流向的电路图。在图6中,在U相上臂2U变成最大电流的情况(即,成为逆变器热限速的锁定的情况)下,将U相电流的流向用虚线表示,将V相电流的流向用单点划线表示,将W相电流的流向用双点划线表示。
根据图5以及图6可以明确:上臂2、3的开关元件5A、5B彼此和整流元件6A、6B彼此不会同时流过电流。即,在此情况下,开关元件5A、5B彼此和整流元件6A、6B彼此不会同时发热。因此,通过层叠上臂2、3的开关元件5A、5B彼此和整流元件6A、6B彼此,能够使热从不流过电流(即,不发热)的臂释放。这样,通过不同时发热的开关元件5A、5B彼此、整流元件6A、6B彼此的层叠结构,增加散热的路线,能够提高散热效率,能够提高冷却功能。
在如上构成的半导体模块1中,由于使上下臂2、3的开关元件5A、5B彼此、和整流元件6A、6B彼此重叠,因此在上下面中对冷却器4A、4B的接触面积变得均等。由此,能够使热均等地扩散,能够提高散热效率。而且,通过层叠上臂2和下臂3,易于实现半导体模块1的小型化。
另外,冷却器4A、4B设置在开关元件5A、5B彼此以及整流元件6A、6B彼此的层叠方向的两侧,因此利用在马达锁定时开关元件5A、5B彼此、整流元件6A、6B彼此不会同时发热这一点,能够将不发热的一侧的臂用作散热区域。因此,即使在像马达锁定时这样的仅特定的开关元件5A、5B、整流元件6A、6B发热的状况下,也能够充分确保冷却能力。其结果,能够提高半导体模块1整体的散热效率。
再有,由于制冷剂流路21在整流元件层叠部1B侧折返,因此易于实现模块整体的小型化。另外,由于整流元件6A、6B的发热量与开关元件5A、5B相比较低,因此通过在整流元件层叠部1B侧使制冷剂流路21折返,能够确保冷却开关元件5A、5B所需的压损。而且,在开关元件层叠部1A中制冷剂的温度保持低温,因此能够提高冷却开关元件5A、5B的冷却性能。
下面,参照图7以及图8说明半导体模块的变形例。
在图7所示的变形例中,在冷却器4A、4B的内部中开关元件5A、5B的正下方位置形成有作为制冷剂流路21的一部分的空间38。该空间38在底板20和绝缘基板7A、7B的绝缘层12之间延伸。这样一来,如箭头F4所示制冷剂能够直接冷却绝缘层12,因此能够更加有效地吸收热,能够提高冷却性能。另外,通过这样设置空间38,还能够期待像冲压金属作用这样的作为应力缓和材料的效果,能够缓和应力。
在图8所示的变形例中,在绝缘基板7A、7B的绝缘层12上设置有向空间38突出的凸起部12a。该凸起部12a为了进一步增加与制冷剂的接触面积而形成为叶片状。图9是沿着图8的IX-IX线的概略截面图。在图9中(a)表示形成于开关元件5A、5B正下方位置的空间38,(b)表示形成在整流元件6A、6B正下方位置的空间39。
如图9的(a)所示,配置在开关元件5A、5B正下方位置的空间38形成为截面圆形状,绝缘层12的凸起部12a形成为圆柱形状。另一方面,配置在整流元件6A、6B的正下方位置的空间39形成为截面椭圆形状,凸起部12b形成为椭圆柱状(参照图9的(b))。
如图8所示,在此情况下,如箭头F5所示,制冷剂不仅在下方而且从凸起部12a的周围直接与绝缘层12接触,从而能够冷却凸起部12a。由此,能够进一步提高吸收热的效果,能够提高冷却性能。
此外,凸起部的形状、配置等不限定于上述内容。例如,也可以如图10的(a)所示,凸起部12a、12b形成为平板状,并与空间38、39的空间相对应地并列设置多个,或者如图10的(b)所示,凸起部12a、12b形成为棒状,并与空间38、39的空间相对应地排列。在此情况下,能够进一步增加凸起部12a、12b与制冷剂的接触面积,能够进一步提高吸收热的效果。
上述实施方式表示本发明涉及的半导体模块的一例。本发明涉及的半导体模块不限定于上述实施方式中记载的内容。本发明涉及的半导体模块可以在不改变各权利要求中记载的主旨的情况下对实施方式涉及的半导体模块进行变形,或者适用于其他的模块。
Claims (1)
1.一种半导体模块,具备上臂和下臂,该上臂和下臂分别具有开关元件、整流元件以及安装上述开关元件和上述整流元件的绝缘基板,该半导体模块的特征在于,具备:
开关元件层叠部,重叠上述上臂和上述下臂的上述开关元件彼此而形成;
整流元件层叠部,重叠上述上臂和上述下臂的上述整流元件彼此而形成;以及
冷却部,至少具有分别设置在上述开关元件彼此以及上述整流元件彼此的层叠方向的两侧的冷却器,该冷却部冷却上述开关元件层叠部以及上述整流元件层叠部,
上述绝缘基板通过层叠由铝或铝合金构成的上部金属层、由氮化铝构成的绝缘层和由铝或铝合金构成的下部金属层而成,
上述冷却部具有制冷剂和用于使上述制冷剂流通的制冷剂流路,
上述冷却器具有成型为波状的冷却叶片以及夹着该冷却叶片而将其固定的顶板和底板,
上述制冷剂流路分别设置在上述开关元件彼此以及上述整流元件彼此的层叠方向的两侧,并在上述整流元件层叠部侧折返,
在上述冷却部内部中上述开关元件的正下方位置形成有作为上述制冷剂流路的一部分的空间,该空间在上述冷却器的上述底板和上述绝缘基板的上述绝缘层之间延伸。
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JP5084527B2 (ja) | 2008-01-23 | 2012-11-28 | 三菱電機株式会社 | ヒートシンクおよび電気機器 |
JP5067267B2 (ja) * | 2008-06-05 | 2012-11-07 | 三菱電機株式会社 | 樹脂封止型半導体装置とその製造方法 |
JP5002568B2 (ja) * | 2008-10-29 | 2012-08-15 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP5162518B2 (ja) | 2009-04-10 | 2013-03-13 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
-
2010
- 2010-01-08 CN CN201080052039.8A patent/CN102612747B/zh not_active Expired - Fee Related
- 2010-01-08 JP JP2011548892A patent/JP5423811B2/ja not_active Expired - Fee Related
- 2010-01-08 US US13/515,663 patent/US8755185B2/en not_active Expired - Fee Related
- 2010-01-08 WO PCT/JP2010/050130 patent/WO2011083578A1/ja active Application Filing
Also Published As
Publication number | Publication date |
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CN102612747A (zh) | 2012-07-25 |
WO2011083578A1 (ja) | 2011-07-14 |
JP5423811B2 (ja) | 2014-02-19 |
US20120250253A1 (en) | 2012-10-04 |
JPWO2011083578A1 (ja) | 2013-05-13 |
US8755185B2 (en) | 2014-06-17 |
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