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CN102598210A - 用于除气室的石英窗 - Google Patents

用于除气室的石英窗 Download PDF

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CN102598210A
CN102598210A CN201080049309XA CN201080049309A CN102598210A CN 102598210 A CN102598210 A CN 102598210A CN 201080049309X A CN201080049309X A CN 201080049309XA CN 201080049309 A CN201080049309 A CN 201080049309A CN 102598210 A CN102598210 A CN 102598210A
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CN102598210B (zh
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贾森·奥古斯蒂诺
蒂姆·哈特
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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Abstract

有五条边的石英窗，其被设置为安装在除气室上作为UV-透射窗，该石英窗由人造石英制成并具有均匀的厚度。该石英窗的形状由底表面、上表面和在该底表面和该上表面之间的侧壁。该侧壁具有通过5个弧形部相互连接的5个直线部。该石英窗具有延伸进入所述侧壁的4个弧形部。

Description

用于除气室的石英窗
背景技术
半导体基底在等离子体处理过程中，若半导体基底暴露于含有卤素的处理气体中，残留的处理气体会留在半导体基底表面。这样的残留物会导致半导体基底在后续操作步骤中出现瑕疵，并且会污染流水线上其他半导体基底。因此，在除气室(degas chamber)中从半导体基底去除该等残留物，是期望的。
发明内容
此处描述的有五条边的石英窗设置成能安装到除气室；该石英窗含有厚度均匀的石英板且具有底表面、上表面和在该底表面和该上表面之间延伸的侧壁，其中该侧壁包括通过5个弧形部相互连接的5个直线部。
附图说明
附图1显示了除气室横断面的示意图。
附图2显示了用于除气室的有五条边的石英窗的透视图。
附图3显示了附图2中石英窗的俯视图。
附图4显示了附图2中石英窗的侧视图。
附图5显示了附图2中石英窗的横断面。
附图6显示了附图2中石英窗的另一个横断面。
具体实施方式
附图1显示了示例性除气室100横断面的示意图。该除气室包括由例如铝等金属材料制成的室壁10。通过多个夹具40、45把有五条边的石英窗30钳夹到所述室壁10的顶部。该石英窗30优选由人造石英制成，因为其具有高UV光透过率。人造石英通常会散开并且是通过热液作用在高压釜中合成。位于该石英窗30和室壁10之间的连续五边形的O形环35提供了真空密封。UV源80设置在石英窗30上方。负压泵60通过能用阀65封闭的排气口(exhaust port)连接到除气室100。气体源70通过能用另外的阀75封闭的气体管道(gas line)连接到除气室100。
附图2是石英窗30实施例的透视图。该石英窗30是厚度均匀的有五条边的石英板，厚度约为1.1至1.2英寸(此处使用的“约”指±10％)，优选是约1.15英寸。该石英窗30的上表面301和底表面302用机械抛光，粗糙度Ra优选为1微英寸和5微英寸之间。侧壁410在上表面301和底表面302之间延伸。当安装到除气室100上时，通过与石英窗30上表面301的4个夹区(clamping regions)391-394相接合的4个夹具40把该石英窗30钳夹至室壁10。
附图3是有五条边的石英窗30的俯视图。该石英窗30的周边是由5个弧形部(351、353、355、357和359)与5个直线部(352、354、356、358和360)相互连接构成。该石英窗30是五边形，其具有直线基部356、与垂直穿过基部356中点并且等分该窗的中心线成约18.5度夹角的直线下歧(diverging)部354和358、以及与该中心线成约47.2度夹角的直线上联(converging)部352和360、位于上下直线部之间的大半径弧形部353和359、位于直线基部356和下直线部354和358之间的小半径弧形部355和357、以及位于上直线部352和360之间的另一个小半径弧形部。出于简单的考虑，设立笛卡尔坐标系(Cartesian coordinator system)来限定这些部。此处描述的所有坐标具有±10％的公差且单位为英寸。笛卡尔坐标的原点位于十字准线310标记的中心点。石英窗30是相对于y轴对称的。石英窗30沿y轴的长度约为15.2英寸，沿x轴的宽度约为12.6英寸。这样的话，石英窗30略大于直径为300mm(12英寸)的晶片。
部352是坐标(-1.58，7.12)和(-4.29，4.62)之间的直线。部360是坐标上(1.58，7.12)和(4.29，4.62)之间的直线。部354是坐标(-5.97，-2.00)和(-4.46，-6.53)之间的直线。部358是坐标(5.97，-2.00)和(4.46，-6.53)之间的直线。部356是坐标(-3.15，-7.47)和(3.15，-7.47)之间的直线。弧形部351的半径约为2.32英寸，中心角(弧形两端半径之间的夹角)为约85.7°，且与部352和360都呈相切关系。弧形部353的半径约为6.3英寸，中心角为约65.7°，且与部352和354都呈相切关系。弧形部355的半径约为1.38英寸，中心角为约71.5°，且与部354和356都呈相切关系。弧形部357的半径约为1.38英寸，中心角为约71.5°，且与部356和358都呈相切关系。弧形部359的半径为约6.3英寸，中心角为约65.7°，且与部358和360都呈相切关系。
附图4显示石英窗30的侧视图，其中侧壁410在石英窗30的上表面301和底表面302之间延伸。石英窗30优选是固态石英，且除了在侧壁内有用于手工或者自动转运石英窗30的凹槽之外，不含有任何突起(protrusion)、缺口(indentation)或者孔道(passage)。石英窗30优选是超纯人工石英。
附图5显示了附图4中沿A-A线的横断面。侧壁410在直线部352、360、354和358上分别具有4个弧形凹槽450A、450B、450C和450D，该凹槽设置成与用于安装和拆卸石英窗30的升降工具相配合。附图6显示了附图5中沿B-B线的横断面。每个凹槽在侧壁410上限定了约1英寸*约0.5英寸的开口、平行的上下壁、和在该平行的上下壁之间半径约为0.75英寸高度为0.5英寸的弧形垂直壁。该凹槽位于上表面301和底表面302之间的约中部位置。凹槽450A和450B的弧形中心分别位于坐标(-3.74，5.74)和(3.74，5.74)处。凹槽450C和450D的弧形中心分别位于坐标(-5.79，-3.97)和(5.79，-3.97)处。凹槽的内角是圆形的，半径约为0.1英寸。凹槽的外角具有45°的斜切，宽度约为0.04英寸。
石英窗30设置成安装在除气室100顶部，为了从例如在除气室100中的直径为300mm的晶片等半导体基底去除例如蚀刻副产物等含卤素残留物，当诸如臭氧或者氧气等气体流入除气室100时，UV光穿过石英窗30进入到除气室100内部。石英窗30足够大，以使得晶片上表面上方的气体能被UV光照射，并且石英窗30非圆形的形状覆于稍小的同样形状的开口之上，这使得可以进入到室中的、如果石英窗是圆形或者其尺寸与半导体基底差不多的话就不可能进入的部分。由于周围有压力计装置、气体管道和与室相邻的部件的存在，石英窗30的形状还使得石英窗30可以被抬升或者降低而不会与这些相邻的硬件相碰擦。
结合附图1，在除气室100中进行处理的过程中，半导体基底50通过室壁10上的装载门(loading door)20运入并且放置在多个基底支持销55上。除气室100通过负压泵60抽成真空，并且气源70把臭氧或者氧气供入除气室100内，气室100保持负压为10mTorr至10Torr。UV源80用UV光穿过石英窗30照射半导体基底50，优选地，UV光波长为254nm，强度介于0.05和5W/cm2之间，照射时间为10秒至1分钟之间。臭氧和氧气吸收来自于UV光的UV辐射，并且降解成能与含卤素残留物反应的氧自由基(氧原子)。反应产物是气体并且从除气室100排出。
虽然此处结合特定的实施例详细描述了石英窗，本发明可以有各种改变或者修改和等同的实施方式，这对于本领域技术人员来说都很显然的，并且不偏离所附权利要求的范围。

Claims (10)

1.除气室的有五条边的石英窗，该石英窗含有厚度均匀的石英板，该石英板含有：
底表面、上表面和在该底表面和该上表面之间延伸的侧壁，其中该侧壁包括通过5个弧形部相互连接的5个直线部。
2.根据权利要求1所述的石英窗，其中，所述5个直线部和所述5个弧形部的构成为：直线基部、2个直线下歧部和2个直线上联部、以及所述上连接部和所述下歧部之间的2个大半径弧形部、所述基部和所述下歧部之间的2个小半径弧形部、和所述上联部之间的另一个小半径弧形部。
3.根据权利要求1所述的石英窗，其中，所述5个直线部和5个弧形部包括：
第一弧形部，其半径约为2.32英寸，中心角为约85.7°；
第二弧形部，其半径约为6.3英寸，中心角为约65.7°；
第三弧形部，其半径约为1.38英寸，中心角为约71.5°；
第四弧形部，其半径约为1.38英寸，中心角为约71.5°；
第五弧形部，其半径约为6.3英寸，中心角为约65.7°；
连接到所述第一和第二弧形部的第一直线部；
连接到所述第二和第三弧形部的第二直线部；
连接到所述第三和第四弧形部的第三直线部；
连接到所述第四和第五弧形部的第四直线部；
连接到所述第五和第一弧形部的第五直线部；和
每一个所述直线部与其相连的弧形部呈相切关系。
4.根据权利1所述的石英窗，其中，所述石英窗的厚度约为1.15英寸，且所述上表面的最大尺寸约为15.2英寸，最小尺寸约为12.6英寸。
5.根据权利要求1所述的石英窗，其中，所述上表面和所述底表面是抛光的表面，其粗糙度Ra介于1微英寸和5微英寸之间。
6.根据权利要求2所述的石英室，进一步包括在沿所述联部和歧部的所述侧壁中的4个弧形凹槽，其中，所述凹槽具有平行的上壁和下壁和位于其间的弧形垂直壁，所述弧形垂直壁的直径约为0.75英寸，所述上壁和下壁之间的高度为0.5英寸，所述凹槽位于所述上表面和所述底表面的中间。
7.根据权利要求1所述的除气室，其中，所述石英为人造石英。
8.除气室，其包括可移除地安装在所述除气室上表面的权利要求1所述石英窗。
9.根据权利要求8所述的除气室，其中，所述石英窗是通过多个夹具和连续的五边形O形环可移除地安装，该连续的五边形O形环设置在所述石英窗和所述除气室上表面之间以提供真空密封。
10.处理半导体基底的方法，其包括：
把该半导体基底置入权利要求8所述的除气室；
把臭氧或者氧气供入所述除气室内，同时该室内负压保持为10mTorr至10Torr；
通过用UV光穿过所述石英窗照射所述除气室中的所述臭氧和氧气产生氧自由基；
通过与所述氧自由基的反应去除所述半导体基底上的含卤素残留物。
CN201080049309.XA 2009-10-28 2010-10-22 用于除气室的石英窗 Expired - Fee Related CN102598210B (zh)

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CN104752264A (zh) * 2013-12-31 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 一种隔离窗固定结构以及腔室

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