CN102556947A - Production method of ion beam and ion beam modulating switch - Google Patents

Abstract

The invention discloses a production method of an ion beam and an ion beam modulating switch. The production method comprises the following steps: S101, preparing a substrate, wherein the substrate comprises a substrate layer, an insulating layer and a highly doped silicon layer; S102, coating a layer of photoetching glue on the front surface of the highly doped silicon layer; S103, forming an electrode pattern on the photoetching glue layer in a photoetching way; S104, transferring the electrode pattern onto the highly doped silicon layer by adopting a corroding way to make a comb electrode; S105, removing the photoetching glue layer on the front surface of the highly doped silicon layer, overturning the substrate, and coating a layer of photoetching glue on the bottom surface of the substrate layer; S106, forming an open pattern on the back of the substrate layer in a photoetching way; S107, corroding the substrate layer and making an opening in the back of the substrate layer; S108, corroding the insulating layer and releasing the comb electrode; S109, overturning the substrate, and carrying out selective metal evaporation in a selected area on the comb electrode; and S110, completing the production of the modulating switch.

Description

The preparation method of a kind of ion beam and electron beam modulation switch

Technical field

The present invention relates to make the technical field of modulation switch, relate in particular to the preparation method of a kind of ion beam and electron beam modulation switch based on the MEMS technology.

Background technology

Bradury Nielson Gate (BNG) is a kind of device that utilizes pectinate texture to come switch ion beam or electron beam.Be mainly used at present in time of-flight mass spectrometer and the ion mobility mass spectrometer.Here at first provide the Potential Distributing of desirable BNG, characteristics of himself and present manufacture craft are discussed again through the method for conformal mapping.Here the pectinate line (electrode) of hypothesis BNG has infinite many to become periodic arrangement and its length also to be endless earlier.If its linear charge density is ± λ.In the real space, the diameter of pectinate line (electrode) is that 2R and adjacent tape have generating positive and negative voltage alternately, ± Vapp, and the spacing of line and line is d. electronics or ion beam along x direction of principal axis flight meeting by the electric field of BNG along the y direction and deflection.In the real space; Make α=x+iy, infinite many lines just only are mapped on two lines of complex space in mapping method

real space through conformal mapping.The Potential Distributing of complex space two lines is very easy to be found the solution, and we just can obtain the Potential Distributing of real space BNG to shine upon back the real space to separating of complex space again.

$\mathrm{\ψ}(x,y)=\frac{\mathrm{\λ}}{2\mathrm{\π}{\mathrm{\ϵ}}_0}\ln \left[\frac{\cosh \left(\frac{\mathrm{\πx}}{d}\right)+\sin \left(\frac{\mathrm{\πy}}{d}\right)}{\cosh \left(\frac{\mathrm{\πx}}{d}\right)-\sin \left(\frac{\mathrm{\πy}}{d}\right)}\right]---\left(1\right)$

In the zone near line, its equipotential lines is approximately round, therefore for R＜＜d; Be under the situation of high penetration; We are similar to and think that line model is very approaching with actual situation. and (x=0 y=d/2-R), can obtain linear charge density by electromotive force to the boundary point of selection cylinder line.

$\mathrm{\λ}=\frac{{2\mathrm{\π\ϵ}}_0{V}_{\mathrm{app}}}{\ln \left[\frac{1+\cos \left(\frac{\mathrm{\πR}}{d}\right)}{1-\cos \left(\frac{\mathrm{\πR}}{d}\right)}\right]}---\left(2\right)$

Combinatorial formula 1 and 2; We see that the Potential Distributing of BNG is proportional to line and attendes the making alive Vapp of institute; And along its intensity of x direction with decaying apart from exponentially;

is the d place apart from line (electrode) distance; Its electromotive force probably is 3%Vapp, apart from line 3.6d place, its electromotive force be about 100,000 of Vapp/.Distance goes out for 8d, is similar to think that electromotive force is zero.Because ion or electron beam through BNG generally all are continuous-flow, when opening the voltage of BNG, just inevitably can be to certain disturbance being arranged at BNG ion or the energy of electronics nearby, thus changed the Energy distribution of ion electron beam.For this disturbance is eased down to minimum level; Analog computation through theory; We know that best method is the distance that reduces between line (electrode) and the line (electrode), thereby increase electric-field intensity can make under less deflection voltage the still identical angle of deflection of ion or electron beam.Penetrance descends gradually if the diameter of line remains unchanged, and this just makes the technology of making BNG have certain degree of difficulty.So far, it is 125 microns that market can obtain its minimum spacing of commercial BNG, and penetrance is 80%.Its method is gold-plated on the potsherd that hollows out, and through the method reservation electrode of exposure with chemical attack, then metal wire is spoted weld on the electrode.Because its used manufacturing technology remains traditional mechanical processing technique, be difficult to let keeping parallelism between line and the line, and fabrication cycle is long, the cost height, fragile.

In view of this, provide a kind of preparation method of making ion beam and electron beam modulation switch based on the MEMS technology to necessitate.

Summary of the invention

Goal of the invention of the present invention provides a kind of preparation method of making ion beam and electron beam modulation switch based on the MEMS technology; It can accomplish that very little and single electrode (line) is high with the depth of parallelism of single electrode (line) diameter with the spacing of comb electrode (BNG); It has shortened the production cycle, has improved production efficiency.

To achieve these goals; The preparation method of a kind of ion beam provided by the invention and electron beam modulation switch; It comprises the steps: S101: preparing substrate; Wherein this substrate comprises substrate layer, insulating barrier and highly doped silicon layer, and wherein said insulating barrier is arranged between said substrate layer and the said highly doped silicon layer; S102: be coated with the last layer photoresist layer in the front of said highly doped silicon layer; S103: on said photoresist layer, make electrode pattern by lithography; S104: said electrode pattern is transferred on the said highly doped silicon layer through corroding method, produced comb electrode; S105: remove the photoresist layer on the said highly doped silicon layer front, and with said substrate upset, and on the substrate layer bottom surface, be coated with the last layer photoresist layer; S106: on said photoresist layer, make substrate layer backside openings figure by lithography; S107: corrode said substrate layer, produce the substrate layer backside openings; S108: said insulating barrier is eroded, discharge comb electrode; S109: with said substrate upset, and selection area carries out the selectivity evaporation metal on said comb electrode; S110: accomplish the making of modulation switch.

Further, a plurality of electrodes in the said comb electrode are parallel to each other, and the minimum range between per two adjacent electrodes is 5 microns.

Further, all electrodes of said comb electrode are in same plane.

Further, said insulating barrier is a silicon oxide layer.

Further, said substrate layer is a layer-of-substrate silicon.

Further; In step S104 and step S107; Photoresist layer and can increase one deck transition zone between the destination layer that will corrode, behind the graphic making of accomplishing said photoresist layer, through corroding method said figure is transferred on the said transition zone earlier; And then make mask with the combination of said transition zone or said transition zone and said photoresist, corrode said destination layer.

Further, the metal that is deposited on the dressing electrode is the metal of stable in properties.

Further, said metal is a gold.

Further, said transition zone is a silica.

The preparation method of a kind of ion beam provided by the invention and electron beam modulation switch; It adopts the MEMS technology to make this ion beam and electron beam modulation switch; The comb electrode of the modulation switch (BNG) that forms through this method manufacturing, its inner every two adjacent interelectrode spacings are very little, and single electrode (line) is high with the depth of parallelism of single electrode (line) diameter; It has shortened the production cycle, has improved production efficiency.

Description of drawings

Fig. 1 is the operation chart of step S101 of the preparation method of a kind of ion beam provided by the invention and electron beam modulation switch;

Fig. 2 is the operation chart of step S102 of the preparation method of a kind of ion beam provided by the invention and electron beam modulation switch;

Fig. 3 is the operation chart of step S103 of the preparation method of a kind of ion beam provided by the invention and electron beam modulation switch;

Fig. 4 is the operation chart of step S104 of the preparation method of a kind of ion beam provided by the invention and electron beam modulation switch;

Fig. 5 is the operation chart of step S105 of the preparation method of a kind of ion beam provided by the invention and electron beam modulation switch;

Fig. 6 is the operation chart of step S106 of the preparation method of a kind of ion beam provided by the invention and electron beam modulation switch;

Fig. 7 is the operation chart of step S107 of the preparation method of a kind of ion beam provided by the invention and electron beam modulation switch;

Fig. 8 is the operation chart of step S108 of the preparation method of a kind of ion beam provided by the invention and electron beam modulation switch;

Fig. 9 is the operation chart of step S109 of the preparation method of a kind of ion beam provided by the invention and electron beam modulation switch;

The structural representation of the comb electrode that Figure 10 forms for the preparation method manufacturing through a kind of ion beam provided by the invention and electron beam modulation switch.

The specific embodiment

Specify the present invention below in conjunction with accompanying drawing, it explains principle of the present invention as the part of this specification through embodiment, other aspects of the present invention, and characteristic and advantage thereof will become very clear through this detailed description.

Shown in Fig. 1-9, the preparation method of a kind of ion beam provided by the invention and electron beam modulation switch, it comprises the steps:

S101: as shown in Figure 1, preparing substrate 100, wherein this substrate comprises substrate layer 3, insulating barrier 2 and highly doped silicon layer 1, wherein said insulating barrier 2 is arranged between said substrate layer 3 and the said highly doped silicon layer 1.

S102: as shown in Figure 2, be coated with last layer photoresist layer 4 in the front of said highly doped silicon layer 1.

S103: as shown in Figure 3, on said photoresist layer 1, make electrode pattern 41 by lithography.

S104: as shown in Figure 4, said electrode pattern 41 is transferred on the said highly doped silicon layer 1 through corroding method, produce comb electrode 12;

S105: as shown in Figure 5, remove the photoresist layer 4 on said highly doped silicon layer 1 front, and with said silicon substrate 100 upsets, and on substrate layer 3 bottom surfaces, be coated with last layer photoresist layer 4.

S 106: as shown in Figure 6, on said photoresist layer 4, make substrate layer 3 backside openings figures 42 by lithography.

S107: as shown in Figure 7, corrode said substrate layer 3, produce substrate layer 3 backside openings 31.It can also pass through several different methods such as dry etching, wet etching and make.

S108: as shown in Figure 8, said insulating barrier 2 is eroded, discharge comb electrode 12; Wherein corrode above-mentioned insulating barrier and can adopt suitable acid solution, preferably adopt hydrofluoric acid;

S109: as shown in Figure 9 with said silicon substrate 100 upsets, and selection area carries out selectivity evaporation metal 5 on said comb electrode 12;

S110: accomplish the making of modulation switch.

Ion beam and electron beam modulation switch (BNG) are processed by silicon substrate (SOI) 100.Pectination motor 12 is completed by the deep erosion of on layer during the highly doped silicon layer 1 (low resistance), carrying out silicon.Pectination motor 12 is isolated by insulating barrier 2 with the substrate layer of emptying 3.At first carry out the deep erosion of photoetching and silicon, produce comb electrode 12 in highly doped silicon layer 1 front of silicon substrate (SOI) 100 materials.Get the back side at substrate layer 3 then and carry out the deep erosion of photoetching and silicon, produce the backside openings on the substrate layer 3, this loses operation termination at insulating barrier 2 places deeply, next insulating barrier 2 usefulness hydrofluoric acid or other suitable acid solution is eroded, and discharges electrode structure.At last, on the zone of selected comb electrode 12, carry out selectivity evaporation metal 5, reduce the probability of electric charge accumulation to improve the electric conductivity of electrode.

Above-mentioned steps S109 adopts the method for block masks that selection area on the comb electrode 12 is carried out selectivity evaporation metal 5.

The preparation method of ion beam provided by the invention and electron beam modulation switch; It adopts the MEMS technology to make this ion beam and electron beam modulation switch, and through the comb electrode 12 that this method manufacturing forms, it includes a plurality of single electrodes 121; The spacing that per two adjacent electrodes are 121 is very little; And single electrode 121 (line) is high with the depth of parallelism of single electrode 121 (line) diameter, and it has shortened the production cycle, has improved production efficiency.

Preferably, a plurality of electrodes 121 in the said comb electrode 12 shown in figure 10 are parallel to each other (combining Fig. 1-9), and the minimum range between per two adjacent electrodes 121 is 5 microns.All electrodes 121 of this comb electrode 12 are in same plane.

Micro-processing technology based on MEMS; Can the minimum spacing of two adjacent electrodes 121 be accomplished that 5 microns and electrode 121 (line) are high with the depth of parallelism of electrode 121 (line) diameter; And in same plane, thereby electric field perturbations is dropped to minimum, and improved penetrance.

With MEMS fabrication techniques BNG shortened the production cycle, output increases, thereby enhances productivity greatly.

This substrate 100 is silicon materials SOI, and its highly doped silicon layer 1 is the low resistance silicon layer, and its insulating barrier 2 is a silicon oxide layer, and its substrate layer 3 is a layer-of-substrate silicon.

Preferably; In step S104 and step S107; Photoresist layer 4 and can increase one deck transition zone between the destination layer (highly doped silicon layer 1 or substrate layer 3) that will corrode, behind the graphic making of accomplishing said photoresist layer 4, through corroding method said figure is transferred on the said transition zone earlier; And then make mask with the combination of said transition zone or said transition zone and said photoresist, corrode said destination layer (highly doped silicon layer 1 or substrate layer 3).This transition zone is that silica is processed.

The metal that is deposited on the dressing electrode 12 is the metal 5 of stable in properties.Preferably, this metal 5 is a gold, to improve the electric conductivity of electrode, reduces the probability of electric charge accumulation.

Because this comb electrode 12 adopts low-resistance silicon to do structure, and makes on the SOI material with the method for the deep erosion of silicon, therefore, the size of electrode 121 can be contracted to several microns, guarantees the depth of parallelism and the flatness of 121 at each electrode simultaneously.Generally can make tens modulation switch (BNG) in addition on each silicon chip, and a plurality of silicon chip can put into same etching chamber etching, it has improved production efficiency greatly.

Above disclose be merely preferred embodiment of the present invention, can not limit the present invention's interest field certainly with this, the equivalent variations of therefore doing according to claim of the present invention still belongs to the scope that the present invention is contained.

Claims (10)

1. the preparation method of ion beam and electron beam modulation switch, it comprises the steps:

S101: preparing substrate, wherein this substrate comprises substrate layer, insulating barrier and highly doped silicon layer, wherein said insulating barrier is arranged between said substrate layer and the said highly doped silicon layer;

S102: be coated with the last layer photoresist layer in the front of said highly doped silicon layer;

S103: on said photoresist layer, make electrode pattern by lithography;

S104: said electrode pattern is transferred on the said highly doped silicon layer through corroding method, produced comb electrode;

S105: remove the photoresist layer on the said highly doped silicon layer front, and with said substrate upset, and on the substrate layer bottom surface, be coated with the last layer photoresist layer;

S106: on said photoresist layer, make substrate layer backside openings figure by lithography;

S107: corrode said substrate layer, produce the substrate layer backside openings;

S108: said insulating barrier is eroded, discharge comb electrode;

S109: with said substrate upset, and selection area carries out the selectivity evaporation metal on said comb electrode;

S110: accomplish the making of modulation switch.

2. the preparation method of a kind of modulation switch according to claim 1 is characterized in that: above-mentioned steps S109 adopts the method for block masks that selection area on the comb electrode is carried out the selectivity evaporation metal.

3. the preparation method of a kind of modulation switch according to claim 1, it is characterized in that: a plurality of electrodes in the said comb electrode are parallel to each other, and the minimum range between per two adjacent electrodes is 5 microns.

4. the preparation method of a kind of modulation switch according to claim 1, it is characterized in that: all electrodes of said comb electrode are in same plane.

5. the preparation method of a kind of modulation switch according to claim 1, it is characterized in that: said insulating barrier is a silicon oxide layer.

6. the preparation method of a kind of modulation switch according to claim 1, it is characterized in that: said substrate layer is a layer-of-substrate silicon.

7. the preparation method of a kind of modulation switch according to claim 1; It is characterized in that: in step S104 and step S107; Photoresist layer and can increase one deck transition zone between the destination layer that will corrode, behind the graphic making of accomplishing said lithography layer glue-line, through corroding method said figure is transferred on the said transition zone earlier; And then make mask with the combination of said transition zone or said transition zone and said photoresist, corrode said destination layer.

8. the preparation method of a kind of modulation switch according to claim 1, it is characterized in that: the metal that is deposited on the dressing electrode is the metal of stable in properties.

9. the preparation method of a kind of modulation switch according to claim 8 is characterized in that: said metal is gold.

10. the preparation method of a kind of modulation switch according to claim 7, it is characterized in that: said transition zone is a silica.

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