CN102509752B - Preparation method of a multi-chip set large-power LED substrate - Google Patents
Preparation method of a multi-chip set large-power LED substrate Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 148
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 91
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims abstract description 91
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052802 copper Inorganic materials 0.000 claims abstract description 79
- 239000010949 copper Substances 0.000 claims abstract description 79
- 238000010438 heat treatment Methods 0.000 claims abstract description 71
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 55
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000011268 mixed slurry Substances 0.000 claims abstract description 37
- 229920003257 polycarbosilane Polymers 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 23
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910017083 AlN Inorganic materials 0.000 claims description 61
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 60
- 238000000498 ball milling Methods 0.000 claims description 60
- 229910052799 carbon Inorganic materials 0.000 claims description 40
- 239000011248 coating agent Substances 0.000 claims description 38
- 238000000576 coating method Methods 0.000 claims description 38
- 229910052757 nitrogen Inorganic materials 0.000 claims description 30
- 238000002156 mixing Methods 0.000 claims description 18
- 238000001035 drying Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 abstract 1
- 239000008096 xylene Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000005524 ceramic coating Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Physical Vapour Deposition (AREA)
Abstract
多芯片组大功率LED基板制备方法，涉及LED基板制备方法。解决现有LED器件在LED金属封装中热膨胀系数不匹配、高分子绝缘层的热导率较低，从而导致LED失效等问题。它以聚碳硅烷、氮化铝粉体、氧化钇为原料，在玛瑙球磨罐中与二甲苯或四氢呋喃进行球磨混合，获得混合浆料后悬涂在洁净的钨铜合金表面并进行干燥；置于铜片表面在真空管式炉中进行热处理后冷却至室温，即获得本发明的多芯片组大功率LED基板。本发明制备的多芯片组大功率LED基板绝缘性能高、热导率高、热膨胀系数与半导体材料相匹配，并且可以简化LED封装结构。本发明适用于多芯片组大功率LED基板的制备。The invention discloses a method for preparing a multi-chip group high-power LED substrate, relating to a method for preparing an LED substrate. The invention solves the problems that the thermal expansion coefficient of the existing LED device does not match in the LED metal package, the thermal conductivity of the polymer insulating layer is low, and the LED fails, and the like. It uses polycarbosilane, aluminum nitride powder, and yttrium oxide as raw materials, ball mills and mixes them with xylene or tetrahydrofuran in an agate ball mill jar, and after obtaining the mixed slurry, it is suspended and coated on the surface of a clean tungsten-copper alloy and dried; Heat treatment is performed on the surface of the copper sheet in a vacuum tube furnace and then cooled to room temperature to obtain the multi-chip group high-power LED substrate of the present invention. The multi-chip group high-power LED substrate prepared by the invention has high insulation performance, high thermal conductivity, thermal expansion coefficient matched with semiconductor materials, and can simplify the LED packaging structure. The invention is suitable for the preparation of multi-chip group high-power LED substrates.
Description
Technical field
The present invention relates to LED base plate preparation method.
Background technology
The advantages such as that LED lighting source has is efficient, energy-conservation, long service life, in energy-intensive today, research LED illumination has far-reaching strategic importance.At present, due to LED power limited, adopt single-chip package can not produce enough luminous fluxes and meet the requirement of people to display and lighting.By a plurality of chips (more than 6) connection in series-parallel, be one group, and be encapsulated as device, become a kind of trend of LED device development.Single led chip nearly 20% electric energy conversion is luminous energy, and nearly 80% electric energy conversion is heat, and namely, multi-chip package device quantity of heat production can increase.Heat concentrates in small-sized chip and cannot scatter and disappear, and can reduce device performance, and faster devices is aging.For the effective of heat scattered and disappeared, in high-power (more than 1w) LED device, mainly take metal substrate, but because thermal expansion metal coefficient is larger, make LED device in use produce larger thermal stress, very large on device performance impact; Metal substrate insulating barrier is generally macromolecular material simultaneously, and thermal conductivity is lower, has restricted the heat dispersion of metal substrate.The ceramic-metal substrate package that the ceramic coating of take is insulating barrier, because it can simplify high-power LED encapsulation structure, can also reduce costs simultaneously, becomes a general orientation of following big power LED packaging ceramic base plate development.
Summary of the invention
The present invention is that in order to solve, existing LED substrate thermal coefficient of expansion in LED metallic packaging does not mate, the thermal conductivity of polymeric dielectric layer is lower, thereby cause the poor problem of LED substrate heat dispersion, thereby a kind of multi-chip group high power LED substrate preparation method is provided.
Multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be that 30%～60% Polycarbosilane PCS and mass fraction ratio are 40%～70% aluminium nitride A1N, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues, after 2h～6h, to obtain mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then, with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
Step 5, the tungsten-copper alloy substrate being carried by copper sheet that step 4 is obtained take out naturally cool to room temperature in vacuum tube furnace after, and remove copper sheet, obtain multi-chip group high power LED substrate.
In step 1, measuring mass percent and be 35%～55% Polycarbosilane PCS and mass fraction ratio is 45%～65% aluminium nitride AlN, and puts into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
Multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be 30%～60% Polycarbosilane PCS, mass fraction than being that 35%～65% aluminium nitride AlN and mass fraction are than the yittrium oxide Y that is 2%～5%
2o
3, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with on tungsten-copper alloy surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, remove copper sheet, obtain multi-chip group high power LED substrate.
In step 1, measure mass percent and be 35%～55% Polycarbosilane PCS, mass fraction than be 42%～61% aluminium nitride AlN and mass fraction than the yittrium oxide that is 3%～4%, and put into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
Multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be that 30%～60% Polycarbosilane PCS and mass fraction ratio are 40%～70% aluminium nitride AlN, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After the copper sheet of the tungsten-copper alloy substrate after step 5, the secondary heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
In step 1, measuring mass percent and be 35%～55% Polycarbosilane PCS and mass fraction ratio is 45%～65% aluminium nitride AlN, and puts into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
Multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be 30%～60% Polycarbosilane PCS, mass fraction than being that 35%～65% aluminium nitride AlN and mass fraction are than the yittrium oxide Y that is 2%～5%
2o
3, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with on tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
In step 1, measure mass percent and be 35%～55% Polycarbosilane PCS, mass fraction than be 42%～61% aluminium nitride AlN and mass fraction than the yittrium oxide that is 3%～4%, and put into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
Multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be that 30%～60% Polycarbosilane PCS and mass fraction ratio are 40%～70% aluminium nitride AlN, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 800 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After the copper sheet of the tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
Multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be 30%～60% Polycarbosilane PCS, mass fraction than being that 35%～65% aluminium nitride AlN and mass fraction are than the yittrium oxide Y that is 2%～5%
2o
3, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 800 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
Beneficial effect: the multi-chip group high power LED substrate that adopts method of the present invention to prepare, the insulation property of its insulating barrier are high, thermal conductivity is high, and thermal coefficient of expansion mates with semi-conducting material, LED substrate perfect heat-dissipating, and effectively simplified LED encapsulating structure.
Embodiment
Embodiment one, multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be that 30%～60% Polycarbosilane PCS and mass fraction ratio are 40%～70% aluminium nitride AlN, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues, after 2h～6h, to obtain mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then, with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
Step 5, the tungsten-copper alloy substrate being carried by copper sheet that step 4 is obtained take out naturally cool to room temperature in vacuum tube furnace after, and remove copper sheet, obtain multi-chip group high power LED substrate.
The difference of multi-chip group high power LED substrate preparation method described in embodiment two, this embodiment and embodiment one is, in step 1, measuring mass percent and be 35%～55% Polycarbosilane PCS and mass fraction ratio is 45%～65% aluminium nitride AlN, and puts into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
Embodiment three, multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be 30%～60% Polycarbosilane PCS, mass fraction than being that 35%～65% aluminium nitride AlN and mass fraction are than the yittrium oxide Y that is 2%～5%
2o
3, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with on tungsten-copper alloy surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, remove copper sheet, obtain multi-chip group high power LED substrate.
The difference of multi-chip group high power LED substrate preparation method described in embodiment four, this embodiment and embodiment three is, in step 1, measure mass percent and be 35%～55% Polycarbosilane PCS, mass fraction than be 42%～61% aluminium nitride AlN and mass fraction than the yittrium oxide that is 3%～4%, and put into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
Embodiment five, multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be that 30%～60% Polycarbosilane PCS and mass fraction ratio are 40%～70% aluminium nitride AlN, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After the copper sheet of the tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
The difference of multi-chip group high power LED substrate preparation method described in embodiment six, this embodiment and embodiment five is, in step 1, measuring mass percent and be 35%～55% Polycarbosilane PCS and mass fraction ratio is 45%～65% aluminium nitride AlN, and puts into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
Embodiment seven, multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be 30%～60% Polycarbosilane PCS, mass fraction than being that 35%～65% aluminium nitride AlN and mass fraction are than the yittrium oxide Y that is 2%～5%
2o
3, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with on tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
The difference of multi-chip group high power LED substrate preparation method described in embodiment eight, this embodiment and embodiment seven is, in step 1, measure mass percent and be 35%～55% Polycarbosilane PCS, mass fraction than be 42%～61% aluminium nitride AlN and mass fraction than the yittrium oxide that is 3%～4%, and put into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
Embodiment nine, multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be that 30%～60% Polycarbosilane PCS and mass fraction ratio are 40%～70% aluminium nitride AlN, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 800 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After the copper sheet of the tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
Embodiment ten, multi-chip group high power LED substrate preparation method, it is realized by following steps:
Step 1, to measure mass percent be 30%～60% Polycarbosilane PCS, mass fraction than being that 35%～65% aluminium nitride AlN and mass fraction are than the yittrium oxide Y that is 2%～5%
2o
3, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 800 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
The coating that the present invention prepares multi-chip group high power LED substrate is the AlN/Al2O3 complex phase ceramic coating through atmosphere heat treatment, it has mainly passed through the prefabricated coating of following Main Stage: PCS/AlN and has heat-treated in process containing a small amount of oxygen atmosphere condition, may occur suc as formula the chemical reaction shown in (1)～formula (4).Polycarbosilane is owing to being unsettled amorphous substance through Low Temperature Thermal cleavage stages product, and carbon wherein also plays pendulum, and oxidized containing meeting under the atmospheric condition of aerobic, element silicon also can exist with the form of silica simultaneously; The oxidized generation gas of carbon makes material system not have free carbon crystallization through high temperature sintering, does not exist free carbon namely to guarantee the electrical insulation capability of ceramic coating; Meanwhile, the silica of generation can be used as the preparation of follow-up complex phase ceramic sintering and supplies raw materials.Oxidized aluminum nitride is a very complicated process, in room temperature, just can carry out, and the reaction of generating polynomial 4, generates aluminium oxide; Aluminium oxide reacts with silica the preparation that realizes complex phase ceramic coating under certain condition.
2C(s)+O
2(g)→CO(g) (1)
C(s)+O
2(g)→CO
2(g) (2)
Si(s)+O
2(g)→SO
2(s) (3)
Claims (10)
1. multi-chip group high power LED substrate preparation method, is characterized in that: it is realized by following steps:
Step 1, to measure mass percent be that 30%～60% Polycarbosilane PCS and mass fraction ratio are 40%～70% aluminium nitride AlN, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues, after 2h～6h, to obtain mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then, with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
Step 5, the tungsten-copper alloy substrate being carried by copper sheet that step 4 is obtained take out naturally cool to room temperature in vacuum tube furnace after, and remove copper sheet, obtain multi-chip group high power LED substrate.
2. multi-chip group high power LED substrate preparation method according to claim 1, it is characterized in that, in step 1, measuring mass percent and be 35%～55% Polycarbosilane PCS and mass fraction ratio is 45%～65% aluminium nitride AlN, and puts into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
3. multi-chip group high power LED substrate preparation method, is characterized in that: it is realized by following steps:
Step 1, to measure mass percent be 30%～60% Polycarbosilane PCS, mass fraction than being that 35%～65% aluminium nitride AlN and mass fraction are than the yittrium oxide Y that is 2%～5%
2o
3, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with on tungsten-copper alloy surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, remove copper sheet, obtain multi-chip group high power LED substrate.
4. multi-chip group high power LED substrate preparation method according to claim 3, it is characterized in that in step 1, measure mass percent and be 35%～55% Polycarbosilane PCS, mass fraction than be 42%～61% aluminium nitride AlN and mass fraction than the yittrium oxide that is 3%～4%, and put into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
5. multi-chip group high power LED substrate preparation method, is characterized in that: it is realized by following steps:
Step 1, to measure mass percent be that 30%～60% Polycarbosilane PCS and mass fraction ratio are 40%～70% aluminium nitride AlN, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h, again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After the copper sheet of the tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
6. multi-chip group high power LED substrate preparation method according to claim 5, it is characterized in that in step 1, measuring mass percent and be 35%～55% Polycarbosilane PCS and mass fraction ratio is 45%～65% aluminium nitride AlN, and puts into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
7. multi-chip group high power LED substrate preparation method, is characterized in that: it is realized by following steps:
Step 1, to measure mass percent be 30%～60% Polycarbosilane PCS, mass fraction than being that 35%～65% aluminium nitride AlN and mass fraction are than the yittrium oxide Y that is 2%～5%
2o
3, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with on tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
8. multi-chip group high power LED substrate preparation method according to claim 7, it is characterized in that in step 1, measure mass percent and be 35%～55% Polycarbosilane PCS, mass fraction than be 42%～61% aluminium nitride AlN and mass fraction than the yittrium oxide that is 3%～4%, and put into agate jar; The Ball-milling Time that ball milling in step 2 mixes is 3h～5h; Be 6h～9h the drying time in step 3; Purity to the nitrogen being filled with in vacuum tube furnace in step 4 is 99.5%.
9. multi-chip group high power LED substrate preparation method, is characterized in that: it is realized by following steps:
Step 1, to measure mass percent be that 30%～60% Polycarbosilane PCS and mass fraction ratio are 40%～70% aluminium nitride AlN, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 800 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After the copper sheet of the tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
10. multi-chip group high power LED substrate preparation method, is characterized in that: it is realized by following steps:
Step 1, to measure mass percent be 30%～60% Polycarbosilane PCS, mass fraction than being that 35%～65% aluminium nitride AlN and mass fraction are than the yittrium oxide Y that is 2%～5%
2o
3, and put into agate jar;
Step 2, in agate jar, splash into dimethylbenzene or oxolane, and carry out ball milling mixing under the condition that adopts planetary ball mill to be 20r/s～30r/s at rotating speed, described ball milling mixes and continues 2h～6h, obtains mixed slurry;
Step 3, the mixed slurry that step 2 is obtained are coated with at tungsten-copper alloy substrate surface, and are at room temperature dried 5h～10h, obtain the tungsten-copper alloy substrate with preset coating;
Step 4, the tungsten-copper alloy substrate with preset coating that step 3 is obtained are placed on the copper sheet surface that thickness is 0.4mm～0.6mm, and send in vacuum tube furnace and heat-treat; Described heat treated process is: to being filled with purity in vacuum tube furnace, be 98.5%～99.9% nitrogen, then with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 400 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 800 of vacuum tube furnace ℃, and be incubated 1h～2h; Again with the heating rate of 1 ℃/min～5 ℃/min by the temperature increase to 1100 of vacuum tube furnace ℃～1400 ℃, and be incubated 1h～2h, and then drop to 500 ℃ with the rate of temperature fall of 2～3 ℃/min, obtain the tungsten-copper alloy substrate after the heat treatment of being carried by copper sheet;
After tungsten-copper alloy substrate after step 5, the heat treatment of being carried by copper sheet that step 4 is obtained naturally cools to room temperature in vacuum tube furnace, take out, and remove copper sheet, obtain multi-chip group high power LED substrate.
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| DE102016102588A1 (en) * | 2016-02-15 | 2017-08-17 | Osram Opto Semiconductors Gmbh | Method for producing a connection carrier, connection carrier, optoelectronic component with a connection carrier and method for producing an optoelectronic component |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103626497A (en) * | 2013-11-27 | 2014-03-12 | 哈尔滨工业大学 | Preparation method of high-heat-conductivity aluminum nitride base multiphase ceramic |
| CN103633225A (en) * | 2013-11-27 | 2014-03-12 | 哈尔滨工业大学 | Preparing method of high-heat conduction insulation copper substrate |
| CN104372192A (en) * | 2014-10-30 | 2015-02-25 | 苏州莱特复合材料有限公司 | Nano tungsten-copper composite material and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1203899A (en) * | 1998-07-08 | 1999-01-06 | 中国科学院上海硅酸盐研究所 | Method for preparing high thermal-conductivity aluminum nitride ceramics |
| CN101038797A (en) * | 2007-04-23 | 2007-09-19 | 吴胜红 | High-power thick-film circuit resistor paste for stainless steel substrate and preparation method thereof |
| CN101654778A (en) * | 2008-08-21 | 2010-02-24 | 北京盘天新技术有限公司 | Method for preparing insulating heat conducting ceramic coating from polymer precursor |
| CN101661977A (en) * | 2008-08-27 | 2010-03-03 | 北京盘天新技术有限公司 | Preparation method of insulating metal substrate for high-power LED packaging |
| EP2219211A1 (en) * | 2009-02-16 | 2010-08-18 | SEMIKRON Elektronik GmbH & Co. KG | Substrate for holding at least one component and method for producing a substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10060221A1 (en) * | 2000-12-04 | 2002-06-13 | Cfi Ceramics For Industry Gmbh | Substrate based on silicon nitride for semiconductor components |
| JP5033948B2 (en) * | 2004-07-08 | 2012-09-26 | 独立行政法人産業技術総合研究所 | Method for producing aluminum nitride powder and method for producing aluminum nitride sintered body |
-
2011
- 2011-11-07 CN CN201110348376.8A patent/CN102509752B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1203899A (en) * | 1998-07-08 | 1999-01-06 | 中国科学院上海硅酸盐研究所 | Method for preparing high thermal-conductivity aluminum nitride ceramics |
| CN101038797A (en) * | 2007-04-23 | 2007-09-19 | 吴胜红 | High-power thick-film circuit resistor paste for stainless steel substrate and preparation method thereof |
| CN101654778A (en) * | 2008-08-21 | 2010-02-24 | 北京盘天新技术有限公司 | Method for preparing insulating heat conducting ceramic coating from polymer precursor |
| CN101661977A (en) * | 2008-08-27 | 2010-03-03 | 北京盘天新技术有限公司 | Preparation method of insulating metal substrate for high-power LED packaging |
| EP2219211A1 (en) * | 2009-02-16 | 2010-08-18 | SEMIKRON Elektronik GmbH & Co. KG | Substrate for holding at least one component and method for producing a substrate |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2006-290720A 2006.10.26 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016102588A1 (en) * | 2016-02-15 | 2017-08-17 | Osram Opto Semiconductors Gmbh | Method for producing a connection carrier, connection carrier, optoelectronic component with a connection carrier and method for producing an optoelectronic component |
| DE102016102588B4 (en) | 2016-02-15 | 2021-12-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Method for producing a connection carrier, connection carrier, optoelectronic component with a connection carrier and method for producing an optoelectronic component |
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