CN102494764B - Low-light detecting method for broad band covering visible light - Google Patents
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Abstract
本发明公开了一种覆盖可见光宽波段的微光探测方法,其特点是该方法将量子点-量子阱光电探测器与CMOS读出电路对接后置于设有微光测试系统的箱内,然后对微光进行探测时可直接读出覆盖可见光的宽波段。本发明与现有技术相比具有灵敏度高,信噪比大,探测波段范围宽,可对光功率<0.2nW的微光进行探测,在0.2nW激光光功率的光照下,读出电路在80μs积分时间内响应电压达到20mV,积分与曝光时间比现有技术至少降低1个数量级,满足了不同器件和信号大小可扩展的需要,有利于推动光电探测器在微光低辐照度探测领域的广泛应用。
The invention discloses a low-light detection method covering a wide band of visible light, which is characterized in that the method connects a quantum dot-quantum well photodetector with a CMOS readout circuit and places it in a box equipped with a low-light test system, and then Direct readout of a broad wavelength band covering visible light is possible for low-light detection. Compared with the prior art, the present invention has high sensitivity, large signal-to-noise ratio, wide detection band range, and can detect low light with optical power <0.2nW. The response voltage reaches 20mV within the integration time, and the integration and exposure time is at least an order of magnitude lower than that of the existing technology, which meets the needs of different devices and scalable signal sizes, and is conducive to promoting the development of photodetectors in the field of low-light and low-irradiance detection. widely used.
Description
技术领域 technical field
本发明涉及电路设计技术领域,具体地说是一种用于光电探测器的覆盖可见光宽波段的微光探测方法。 The invention relates to the technical field of circuit design, in particular to a low-light detection method for a photodetector covering a wide band of visible light.
背景技术 Background technique
微光探测器可以工作在极微弱的光照条件下,在军事侦察,空间探测、机器视觉、环境监测、保安监控、医疗诊断、生物科学众多领域中应用十分广泛很多的应用领域需要对微光功率10nW及以下的光功率进行探测。CMOS图像探测器中的噪声水平已经不断降低,对微光信号的灵敏度也不断提高,但CMOS图像传感器必须采用像素增强器倍增光生载流子数目或图像增强器后才能进行微光探测,而且积分时间与曝光时间都比较漫长,然而该微光探测在微光信号情况下准确性比较低,影响了对光探测器进一步研究和探索,大大制约了光探测器在微光低辐照度领域的广泛应用。 Low-light detectors can work under extremely weak light conditions, and are widely used in military reconnaissance, space detection, machine vision, environmental monitoring, security monitoring, medical diagnosis, and many fields of biological science. Many application fields require low-light power 10nW and below optical power for detection. The noise level in CMOS image detectors has been continuously reduced, and the sensitivity to low-light signals has also been continuously improved, but CMOS image sensors must use pixel intensifiers to multiply the number of photogenerated carriers or image intensifiers before low-light detection can be performed, and the integral The time and exposure time are relatively long, but the accuracy of low-light detection is relatively low in the case of low-light signals, which affects the further research and exploration of photodetectors, and greatly restricts the application of photodetectors in low-light and low-irradiance fields. widely used.
发明内容 Contents of the invention
本发明的目的是针对现有技术的不足而提供的一种覆盖可见光宽波段的微光探测方法,它将量子点-量子阱光电探测器与CMOS读出电路对接后置于设有微光测试系统的箱内,可探测到比0.2nW以下光功率更低的微光,而且积分与曝光时间更短,操作方便,微光探测准确性高,满足了不同器件和信号大小可扩展的需要,有利于推动光电探测器在微光低辐照度探测领域的广泛应用,对进一步研究、开发微光探测有着及其重要意义。 The purpose of the present invention is to provide a low-light detection method covering a wide band of visible light in view of the deficiencies in the prior art. In the box of the system, low-light with lower optical power than 0.2nW can be detected, and the integration and exposure time are shorter, the operation is convenient, and the low-light detection accuracy is high, which meets the needs of different devices and scalable signal size. It is conducive to promoting the wide application of photodetectors in the field of low-light and low-irradiance detection, and has great significance for further research and development of low-light detection. the
本发明的目的是这样实现的:一种覆盖可见光宽波段的微光探测方法,其特点是该方法将量子点-量子阱光电探测器与CMOS读出电路对接后置于设有微光测试系统的箱内,然后对微光进行探测时可直接读出覆盖可见光的宽波段,其具体探测包括以下步骤: The purpose of the present invention is achieved in this way: a low-light detection method covering a wide band of visible light, which is characterized in that the method is equipped with a low-light test system after docking the quantum dot-quantum well photodetector and the CMOS readout circuit In the box, then the wide band covering visible light can be directly read out when detecting low light. The specific detection includes the following steps:
(一)、光电探测器与读出电路的对接 (1) The connection between the photodetector and the readout circuit
将量子点-量子阱光电探测器与CMOS读出电路对接在一个基板上并焊接在杜瓦瓶里,以减少外部电磁干扰; The quantum dot-quantum well photodetector and the CMOS readout circuit are docked on a substrate and welded in a Dewar bottle to reduce external electromagnetic interference;
(二)、微光测试系统 (2) Micro-light test system
微光测试系统由微光辐射光源、第一分光棱镜、第二分光棱镜、显微物镜、杜瓦瓶、白光灯、LCD显示器、工业电视监控器、微动台、测试电路和数字示波器构成的共轴光学测试平台,其中杜瓦瓶里焊接有对接后的光电探测器和读出电路; The low-light test system consists of a low-light radiation source, the first beam splitting prism, the second beam splitting prism, a microscope objective lens, a Dewar bottle, a white light lamp, an LCD display, an industrial TV monitor, a micro-motion stage, a test circuit and a digital oscilloscope. Coaxial optical test platform, in which the docked photodetector and readout circuit are welded in the Dewar bottle;
(三)、微光读出探测 (3) Low-light readout detection
将上述微光测试系统置于0 nW背景信号的黑布覆盖的箱内,杜瓦瓶设置在120K温度下工作,并为光电探测器提供电压偏置和读出电路提供驱动信号,读出电路的两输出端分别接入数字双踪示波器,然后调节微动台使激光光斑照射在光电探测器的光敏元上,通过滑动设置在显微物镜前的遮光金属片分别测试读出电路无光照和有光照的输出电压,其两电压差为该光敏元上的微光响应电压,接着,再调节微动台使激光光斑照射在光电探测器的下一个光敏元上,重复上述步骤,直至完成所有阵列的量子点-量子阱探测器的微光读出探测。 Put the above-mentioned low-light test system in a black cloth-covered box with a background signal of 0 nW, set the Dewar bottle to work at a temperature of 120K, and provide a voltage bias for the photodetector and a drive signal for the readout circuit, and the readout circuit The two output ends of the digital oscilloscope are respectively connected to the digital double-trace oscilloscope, and then the micro-movement stage is adjusted so that the laser spot is irradiated on the photosensitive element of the photodetector. The output voltage with light, the difference between the two voltages is the low-light response voltage on the photosensitive element, then adjust the micro-movement stage so that the laser spot is irradiated on the next photosensitive element of the photodetector, and repeat the above steps until all the photosensitive elements are completed. Low-light readout detection of arrayed quantum dot-quantum well detectors.
所述微光辐射光源由激光器、第一衰减盘、第二衰减盘、滤光片、反射镜和光功率计组成连续可调的10-1nW~1.6μW辐射度的点光源。 The low-light radiation source consists of a laser, a first attenuation disk, a second attenuation disk, a filter, a mirror and an optical power meter to form a continuously adjustable point light source with an irradiance of 10 -1 nW~1.6μW.
所述测试电路为光电探测器和读出电路提供电压偏置和驱动信号,使探测器与读出电路在正常范围内工作,并测量出光电响应电压。 The test circuit provides voltage bias and driving signals for the photodetector and the readout circuit, so that the detector and the readout circuit can work within a normal range, and measure the photoelectric response voltage.
所述电压偏置为光电探测器的工作偏压,以量子点-量子阱光电探测器的响应率、光电特性和信噪比确定。 The voltage bias is the working bias voltage of the photodetector, which is determined by the responsivity, photoelectric characteristics and signal-to-noise ratio of the quantum dot-quantum well photodetector.
所述驱动信号为驱动读出电路对探测器阵列进行行列扫描、积分、读出和复位的时序信号。 The driving signal is a timing signal for driving the readout circuit to scan, integrate, read out and reset the detector array. the
本发明与现有技术相比具有灵敏度高,信噪比大,探测波段范围宽,覆盖到近紫外、可见光和近红外波段,弥补了CCD器件的不足,可对光功率<0.2nW的微光进行探测,在0.2nW激光光功率的光照下,读出电路在80μs积分时间内响应电压达到20mV,积分与曝光时间比现有技术至少降低1个数量级,满足了不同器件和信号大小可扩展的需要,有利于推动光电探测器在微光低辐照度探测领域的广泛应用。 Compared with the prior art, the present invention has high sensitivity, large signal-to-noise ratio, wide range of detection bands, covers near ultraviolet, visible light and near infrared bands, makes up for the deficiency of CCD devices, and can detect low light with optical power <0.2nW For detection, under the illumination of 0.2nW laser light power, the response voltage of the readout circuit reaches 20mV within 80μs integration time, and the integration and exposure time is at least an order of magnitude lower than that of the existing technology, which meets the needs of different devices and scalable signal sizes. It is beneficial to promote the wide application of photodetectors in the field of low-light and low-irradiance detection.
附图说明 Description of drawings
图1为本发明微光测试系统结构示意图; Fig. 1 is the structure schematic diagram of low-light test system of the present invention;
图2为本发明连续可调微光辐射光源结构示意图; Fig. 2 is a schematic structural diagram of a continuously adjustable micro-light radiation source of the present invention;
图3为本发明微光测试系统驱动信号时序图; Fig. 3 is a timing diagram of driving signals of the low light test system of the present invention;
图4为量子点-量子阱光电探测器像元无光照波形图; Fig. 4 is quantum dot-quantum well photodetector pixel unilluminated waveform;
图5为量子点-量子阱光电探测器像元微光光照波形图。 Fig. 5 is a low-light illumination waveform diagram of a quantum dot-quantum well photodetector pixel.
具体实施方式 Detailed ways
下面以量子点-量子阱光电探测器与CMOS读出电路对接然后,对其进行微光探测的具体实施例,对本发明做进一步的阐述: Below with quantum dot-quantum well photodetector docking with CMOS readout circuit then, the specific embodiment that it carries out micro-light detection, the present invention is further elaborated:
实施例1 Example 1
本发明对微光进行探测时可直接读出覆盖可见光的宽波段,其具体探测包括以下步骤: The present invention can directly read out the wide band covering visible light when detecting low light, and its specific detection includes the following steps:
(一)、光电探测器与读出电路的对接 (1) The connection between the photodetector and the readout circuit
将异质结量子点-量子阱光电探测器与CMOS读出电路对接在一个基板上并焊接在杜瓦瓶里,以减少外部电磁干扰,光电探测器和读出电路对接后,其信噪比很大,在0.2nW激光功率的光照下进行探测, 80μs积分时间内读出电路响应电压达到20mV,无需使用图像增强器或光电倍增管。在探测器工艺条件不变的情况下,通过对探测器像素结构和尺寸的合理选取和读出电路积分时间参数的设置,完全可以探测到比0.2nW以下光功率更低的微光。 The heterojunction quantum dot-quantum well photodetector and the CMOS readout circuit are docked on a substrate and welded in a Dewar bottle to reduce external electromagnetic interference. After the photodetector and the readout circuit are docked, the signal-to-noise ratio It is very large, and it is detected under the illumination of 0.2nW laser power, and the response voltage of the readout circuit reaches 20mV within 80μs integration time, without using an image intensifier or a photomultiplier tube. Under the condition that the process conditions of the detector remain unchanged, through the reasonable selection of the pixel structure and size of the detector and the setting of the integration time parameter of the readout circuit, it is completely possible to detect low light with an optical power lower than 0.2nW.
(二)、微光测试系统 (2) Micro-light test system
参阅附图1,微光测试系统由微光辐射光源2、第一分光棱镜3、第二分光棱镜4、显微物镜5、杜瓦瓶6、白光灯7、LCD显示器8、工业电视监控器9、微动台10、测试电路11和数字双踪示波器12构成的共轴光学测试平台。设有工业电视监控器9的共轴光学平台,可以在LCD显示器8上显示出激光光斑辐照在光电探测器的位置,并通过调节微动台10确保激光光斑辐照在光电探测器的像元上,其中杜瓦瓶8里焊接有对接后的光电探测器和读出电路。测试电路11为光电探测器和读出电路提供合适的电压偏置和驱动信号,使探测器与读出电路在正常范围内工作,并测量出光电响应电压,电压偏置为光电探测器的工作偏压,工作偏压是以量子点-量子阱光电探测器的响应率、光电特性和信噪比确定,驱动信号为驱动读出电路对探测器阵列进行行列扫描、积分、读出和复位的时序信号。
Referring to accompanying drawing 1, low-light test system is made of low-
本微光测试系统置于黑箱1内,外面用黑布遮盖,其目的是为了降低外界背景光的影响,实验结果表明,共轴光学平台可实现10-1nW~1.6μW 激光功率的连续可调,满足光电探测器的微光低辐射度的测试条件,为了减少测试噪声,系统的各个部分共地。
The low-light test system is placed in the
参阅附图2,微光辐射光源2由激光器21、第一衰减盘22、第二衰减盘23、滤光片24、反射镜25和光功率计26组成连续可调的10-1n~1.6μW辐射度的点光源,通过光功率校准为微光测试提供准确的光源,其中:激光器21选用波长为633nm He-Ne激光,其辐射出的光功率为1.6μW,远大于微光辐射光电测试的要求;第一衰减盘22和第二衰减盘23选用360度连续衰减;滤光片24选用10%的滤光度,本系统可以同时放置三个分别10%,1%和0.1%的滤光片,理论最小辐射光功率可以小到10-15W。
Referring to accompanying drawing 2, the low-
(三)、微光读出探测 (3) Low-light readout detection
将上述微光测试系统置于0 nW背景信号的黑布覆盖的黑箱1内,杜瓦瓶6设置在120K温度下工作,测试电路11为光电探测器提供电压偏置和读出电路提供驱动信号,使探测器与读出电路在正常范围内工作。读出电路的两输出端分别接入数字双踪示波器12,然后调节微动台10使激光光斑照射在光电探测器的光敏元上,通过滑动设置在显微物镜5前的遮光金属片51分别测试读出电路在无光照和有光照时的输出电压,其两电压差为该光敏元上的微光响应电压,接着,再调节微动台10使激光光斑照射在光电探测器的下一个光敏元上,重复上述步骤,直至完成所有阵列的量子点-量子阱探测器的微光读出探测。在探测器工艺条件不变的情况下,通过对探测器像素结构和尺寸的合理选取和读出电路积分时间等参数的设置,完全可以探测到比0.2nW以下光功率更低的微光。
Place the above-mentioned low-light test system in a
本共轴光学测试平台可以方便地监控和调节微动台10使激光光斑照射在光电探测器的光敏元上,具体测试和调节如下: The coaxial optical test platform can conveniently monitor and adjust the micro-motion stage 10 so that the laser spot is irradiated on the photosensitive element of the photodetector. The specific test and adjustment are as follows:
当激光和微光功率校准后,扳开反射镜25移开光路,打开白光灯7激光光斑和白光通过第一分光棱镜3、第二分光棱镜2和显微物镜5后照在杜瓦瓶6内的光电探测器上,通过与工业电视监控器9相连的LCD显示器8可以清晰看见激光光斑和光电探测器,调节微动台10使激光光斑准确辐照在光电探测器像元上以后,关闭白光灯7,扳开第一分光棱镜3和第二分光棱镜4,这样激光光斑通过显微物镜5直接辐照在光电探测器像元上,读出电路通过测试电路11提供工作电压和工作时序,读出电路的输出OUT1和OUT2分别接入AgelintDSO6052A数字双踪示波器12,通过滑动显微物镜5前面的遮光金属片51分别测无光照和有光照情况下的输出电压OUT1和OUT2,实际的读出电路响应电压为两个输出电压差,即读出电路响应电压= OUT2-OUT1。第一个像元的微光探测完后,接着,再调节微动台10使激光光斑准确辐照到下一个像元上,重复上述步骤,直至完成所有2×8阵列的量子点-量子阱探测器的微光读出测试。
After the laser and low-light power are calibrated, open the
测试电路11为光电探测器和读出电路提供合适的电压偏置和驱动信号,使探测器与读出电路在正常范围内工作,驱动信号给读出电路提供合适的时序,使读出电路在时钟信号、行选信号和列选信号作用下依次输出16个像元对应的输出电压,各驱动信号如下表1: The test circuit 11 provides suitable voltage bias and driving signals for the photodetector and the readout circuit, so that the detector and the readout circuit can work in a normal range, and the drive signal provides suitable timing for the readout circuit, so that the readout circuit can operate in a normal range. Under the action of the clock signal, row selection signal and column selection signal, the output voltages corresponding to 16 pixels are sequentially output, and the driving signals are as follows in Table 1:
表1 微光测试系统驱动信号说明 Table 1 Description of driving signals of low-light test system
参阅附图3,测试驱动信号时序的步骤如下: Referring to accompanying drawing 3, the steps of testing the timing of the driving signal are as follows:
(1)测试电路11给读出电路施加一个START信号,经过读出电路初始化(约几十μs)后,移位寄存器输出C8信号; (1) The test circuit 11 applies a START signal to the readout circuit, and after the readout circuit is initialized (about tens of μs), the shift register outputs the C8 signal;
(2)C8信号的上升沿触发产生复位(RESET)信号; (2) The rising edge of the C8 signal triggers a reset (RESET) signal;
(3)RESET复位信号的上升沿触发产生SH1信号; (3) The rising edge of the RESET reset signal triggers the SH1 signal;
(4)SH1信号经过一定时间的延迟产生SH2信号,延迟时间就是读出电路对探测器光信号的积分时间; (4) The SH1 signal is delayed for a certain time to generate the SH2 signal, and the delay time is the integration time of the detector light signal by the readout circuit;
(5)SH2信号结束后,读出电路中移位寄存器依次选通输出每一路的输出信号,直至输出一个C8信号表示最后一路信号已输出完。 (5) After the SH2 signal ends, the shift register in the readout circuit sequentially strobes and outputs each output signal until a C8 signal is output to indicate that the last signal has been output.
重复上述步骤(1)~(4)过程,使读出电路不停地对探测器阵列进行行列扫描、积分、读出和复位动作。 Repeat the above steps (1)~(4), so that the readout circuit continuously scans, integrates, reads out and resets the detector array.
参阅附图4,本发明探测的量子点-量子阱光电探测器在无光照的情况下,光电探测器和读出电路在对接后得到的响应电压的实验波形图,其波形图表示光电探测器的第7个像元在扫描信号控制下的无光辐射的输出电压波形图,可明显观察到该像元在无光照下的输出电压没有变化,测试不到响应电压。 Referring to accompanying drawing 4, the quantum dot-quantum well photodetector that the present invention detects under the situation of no illumination, the experimental waveform diagram of the response voltage that photodetector and readout circuit obtain after docking, its waveform diagram represents photodetector The waveform diagram of the output voltage of the seventh pixel without light radiation under the control of the scanning signal, it can be clearly observed that the output voltage of the pixel has no change under the control of the scan signal, and the response voltage cannot be tested.
参阅附图5,本发明探测的量子点-量子阱光电探测器在微光光照下,光电探测器和读出电路在对接后得到的响应电压的实验波形图,其圆圈内表示光电探测器的第7个像元在扫描信号控制下有光辐射的输出电压波形图,可明显观察到该像元在微光下的输出电压变化并测试得到响应电压,实验证明本发明在微光情况下能很好的对量子点-量子阱光电探测器进行微光测试。 Referring to accompanying drawing 5, the quantum dot-quantum well photodetector that the present invention detects is under low-light illumination, and the experimental waveform diagram of the response voltage that photodetector and readout circuit obtains after docking, represents the photodetector in its circle The 7th pixel has the output voltage waveform diagram of light radiation under the control of the scanning signal. It can be clearly observed that the output voltage of the pixel changes in low light and the response voltage is obtained by testing. The experiment proves that the present invention can be used in low light conditions. Good for low-light testing of quantum dot-quantum well photodetectors.
以上只是对本发明作进一步的说明,并非用以限制本专利的实施应用,凡为本发明等效实施,均应包含于本专利的权利要求范围之内。 The above is only a further description of the present invention, and is not intended to limit the implementation and application of this patent. All equivalent implementations of the present invention should be included in the scope of claims of this patent. the
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