CN102479885B - Method for manufacturing semiconductor element - Google Patents
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- CN102479885B CN102479885B CN 201010553053 CN201010553053A CN102479885B CN 102479885 B CN102479885 B CN 102479885B CN 201010553053 CN201010553053 CN 201010553053 CN 201010553053 A CN201010553053 A CN 201010553053A CN 102479885 B CN102479885 B CN 102479885B
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- 238000005520 cutting process Methods 0.000 claims abstract description 24
- 238000002955 isolation Methods 0.000 claims abstract description 24
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
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Abstract
The invention discloses a method for manufacturing semiconductor elements, which comprises the steps of: forming one or more isolation channels with proper depths on a first surface by etching stacked wafers formed by the semiconductor elements; testing the optical and electric properties of each of the isolation channels, and reversely attaching an adhesive film arranged on a working platform to the first surface of the available wafer, while coating a water-soluble medium with a light receiving property to an upward second surface at the other side of the wafer; upwardly detecting each of the isolation channels preset by the wafers by a detector at the bottom of the working platform; cutting each of the isolation channels by a medium in combination with a low-power laser light source (Pico second laser); removing the medium on the second surface; and performing wafer cracking through the isolation channels; and turning formed crystal grains and allowing the first surface to face upwardly, and detecting the appearances of the crystal grains for subsequent processing.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor element, especially refer to the medium by the wafer surface coating, the manufacture method that cooperates the radium-shine light source of low-power (Pico second laser) to cut, by one or one above isolation road on the wafer of semiconductor element, cut apart a plurality of crystal grain of moulding, do not destroy the wafer tissue because of division processing, can promote the product yield.
Background technology
Generally with the semi-conductive luminescent wafer of gallium nitride (GaN) matrix, usually all be to utilize sapphire (Sapphire) or similar transparent material as base material, and on base material the stacked light emitting layer, to be shaped to nitride semiconductor layer, round by the Jingjing of heap of stone of a plurality of each semiconductor layers formation again, make the nitride semiconductor LED wafer, namely utilize a plurality of Jingjing circles of heap of stone that are stacked in nitride semiconductor layer on this sapphire substrate, be divided into a plurality of wafers, but round to the Jingjing of heap of stone that comprises sapphire substrate, when being divided into a plurality of LED wafer with good yield, because the hardness height of sapphire substrate then causes the difficulty in the process operations of cutting apart or cutting into slices.
And light-emitting diode (LED, Light Emitting Diode) processing procedure, earlier by the substrate of single-chip as growth usefulness, wafer is built in the moulding of the various building crystal to grow method of recycling, to build wafer again and make electrode, and after carrying out the platform etching, cut into wafer again, can will build wafer at last and break down into a plurality of single crystal grain; And the cutting of crystal grain is the very important processing procedure of light-emitting diode wafer, because crystal grain is after going through complicated processing procedure, and break down into stage of a plurality of single crystal grain will building wafer, if can't keep high yield or because of the original characteristic of die separation method affect, also or because the speed of cutting causes the cost of procedure for processing too high excessively slowly, for the production of crystal grain, make namely can form quite and seriously influence; The dealer is then arranged in order to solve wafer of heap of stone in procedure for processing, the difficulty of cutting apart operation, can utilize radium-shine cutting to build cutting apart of wafer, to promote fine ratio of product, but when using radium-shine processing to cut apart operation, the transparency carrier of Chang Yinlei wafer is to laser light absorptivity deficiency, and the pyrocaloric effect that uses the radium-shine light source of high power to produce, namely can form the destruction of being heated so that producing burned black phenomenon to wafer perimeter element of heap of stone, also cause cutting back crystal grain luminosity and significantly decay or cut condition of poor, make the product fraction defective raising of LED wafer.
Therefore, how to solve cutting apart in the operation processing procedure in LED wafer at present, the base material of cause wafer of heap of stone is to the absorptivity deficiency, be difficult for cutting apart the problem that operation is carried out, and cut apart operation by high-power radium-shine light source processing, cause the shortcoming of crystal grain brightness decay, the raising of product fraction defective etc., must be improved, the relevant manufacturer that is the inventor and is engaged in the industry desires most ardently the direction place that research improves.
Summary of the invention
The inventor is because above-mentioned problem and shortcoming, be to collect related data, via assessing in many ways and considering, and to engage in the many years of experience of the industry accumulation, via constantly studying and revising, beginning is designed this kind by the radium-shine light source conjunction with semiconductors of low-power wafer surface coating water-soluble medium, and the patent of invention that can cut apart the manufacture method of the semiconductor element that crystal grain do not damage smoothly is born.
Main purpose of the present invention is the stacked wafer (Jingjing sheet of heap of stone) that is this semiconductor element institute moulding, in the isolation road of first surface by one or one above appropriate depth of etching and processing moulding, and carry out light, the test of electrical property, and detect the available wafer in back (Jingjing sheet of heap of stone), oppositely attach the glued membrane that is positioned on the workbench with first surface, opposite side second surface up, be coated with the water-soluble medium that is subjected to photosensitiveness, detected upwards with detector by workbench bottom then that wafer is default respectively isolates, and the cooperation radium-shine light source of low-power (Pico second laser), after isolating road and carry out cutting processing at each via medium, wafer is removed in the medium of second surface, carrying out wafer by the isolation road bursts apart, separate, a plurality of crystal grain finished products of moulding, turn to first surface again and place up, the outward appearance of carrying out the crystal grain finished product detects, screening, and carry out the following process processing procedure.
Secondary objective of the present invention is the wafer that is this semiconductor element, comprise transparent material base material, take shape in the semiconductor first type layer, composition surface and the second type layer that are stacked on the base material, take shape in the butt joint layer on the semiconductor second type layer, pass through etching and processing by first surface again, one or one above isolation road of forming device appropriate depth, and the degree of depth of respectively isolating is for going deep into the appropriate depth to the about 2 μ m of the semiconductor second type layer～10 μ m.
A further object of the present invention is the wafer that is this semiconductor element; through after oppositely being placed on the workbench; and in second surface up; be coated with the water-soluble medium that is subjected to photosensitiveness; then water-soluble medium can be the organic protection liquid of water soluble polymer or water-soluble organosilane ester protection liquid etc.; and protection liquid comprises compositions such as polyvinyl alcohol, dyestuff, and after wafer process is shaped to plural crystal grain, the medium on the crystal grain second surface can be removed by washing operation.
Description of drawings
Fig. 1 is wafer side view of the present invention;
Fig. 2 is the processing operation end view of wafer of the present invention;
Fig. 3 is the end view of crystal grain of the present invention;
Fig. 4 is flow chart of the present invention.
Description of reference numerals: 1-wafer; The 101-base material; 105-docks layer; The 102-first type layer; The 11-first surface; The 103-composition surface; 12-isolates the road; The 104-second type layer; The 13-second surface; The 2-workbench; The 21-glued membrane; The radium-shine light source of 23-; The 22-detector; The 3-medium; 4-crystal grain.
Embodiment
For reaching above-mentioned purpose and effect, the technology used in the present invention means and execution mode thereof, accompanying drawing illustrates in detail that with regard to preferred embodiment of the present invention its feature and function are as follows, are beneficial to understand fully now.
See also Fig. 1-shown in Figure 4, be processing operation end view, the end view of crystal grain, the flow chart of wafer side view of the present invention, wafer, find out by knowing shown in the figure, semiconductor device manufacturing method of the present invention, its step:
(100) with the wafer 1 of semiconductor element, carry out the etch preset proper depth by first surface 11, to be shaped to together or the isolation road 12 together.
(101) at one or one above isolation road 12 on the wafer 1, carry out the test of light, electrical property, detect complete, good wafer 1.
(102) will detect the available wafer 1 in back again and be turned to, and oppositely attach the glued membrane 21 that is positioned on the workbench 2 with first surface 11.
(103) wafer 1 reverse back opposite side second surface 13 up is coated with the water-soluble medium 3 that is subjected to photosensitiveness.
(104) pass through detector 22 by workbench 2 bottoms, detect one of first surface 11 moulding of presetting or one above isolation road 12 of wafer 1, cooperate the radium-shine light source 23(Pico of low-power second laser again), at one or one above isolation road 12, carry out the cutting processing of wafer 1 via medium 3.
(105) medium 3 that the second surface 13 of wafer after the cutting processing 1 is coated with utilizes clear water to be removed, and at the above road 12 that isolates together or together, carry out wafer 1 burst apart (Break), separate and a plurality of crystal grain 4 finished products of moulding.
(106) a plurality of crystal grain 4 finished products after the moulding are turned to again, and reply and place up with first surface 11, for the outward appearance that detects each crystal grain 4 finished product, carry out the screening of complete, good crystal grain 4.
(107) a plurality of crystal grain 4 finished products carry out procedure for processing such as follow-up routing, encapsulation, packing.
Above-mentioned this case manufacture method, the wafer 1 of this semiconductor element, can be the photoelectric cell of light-emitting diode (LED), comprise base material 101, take shape in semiconductor stacked on the base material 101 first type layer 102, composition surface 103 and the second type layer 104, take shape in the butt joint layer 105 on the semiconductor second type layer 104, and the upper surface of butt joint layer 105 is the first surface 11 with wafer 1, first surface 11 with respect to butt joint layer 105, opposite side substrate 101 surfaces have the second surface 13 of wafer 1, and by the first surface 11 of wafer 1 towards the semiconductor second type layer 104, composition surface 103, the first type layer 102, carry out the etch preset proper depth, and etching and processing can be by dry ecthing, etching etc. is closed in wet etching or dried wet mixing, and various etching and processing modes are carried out; Then form the separation of suitable distance at wafer 1, with one of moulding or one above isolation road 12, as for one or one above degree of depth of isolating road 12, must pass the second type layer 104, behind the composition surface 103, go deep into the degree of depth of the semiconductor first type layer 102 about 2 μ m～10 μ m again, can carry out light for the wafer 1 of semiconductor element, during the detection of electrical property, the semiconductor first type layer 102 with brilliant moulding of heap of stone on probe test (Probe testing) wafer 1, the second type layer 104, butt joint layer 105 etc., the light of each semiconductor layer, electrical property, except directly the second type layer 104 and butt joint layer 105 being detected, more can go deep into respectively isolating the light that detects the first type layer 102 in 12, electrical property, testing wafer 1(LED wafer 1, character such as brightness LED) and wavelength.
And the base material 101 of this wafer 1 is the transparent base 101 of light-permeable, can be sapphire (Sapphire), glass, quartzy, synthetic quartz or carborundum (SiC) etc., various transparent base 101, and form the second surface 13 of wafer 1 in base material 101 1 sides, opposite side namely can be the N-type layer for the semi-conductive first type layer 102(of brilliant moulding of heap of stone, also can be P type layer, and with the second type layer 104 be type layer material of different nature), composition surface 103(P-N connects face, P-N Junction), the second type layer 104(can be P type layer, also can be the N-type layer, must be type layer material of different nature with the first type layer 102), and take shape in the butt joint layer 105(weld pad on the semi-conductive second type layer 104 surface, Pad), then in order to electrically connecting the interface of external circuits, as the routing type structure dress (Wire-bonding) that carries out the following process operation, crystal covering type structure dress procedure for processing such as (Flie-chip).
Wafer 1 as for this semiconductor element, after through upset, oppositely paste the glued membrane of desiring to be positioned on the workbench 2 21 with first surface 11, and workbench 2 can be transparent sucker, transparent vacuum attraction seat etc., and the glued membrane 21 on the workbench 2 namely can be the transparent material of tool adhesive property (viscose glue, resin or double faced adhesive tape etc.); In addition, respectively isolate 12 detector 22 on the wafer 1 in order to detect, can be charge coupled cell (CCD, Charge-coupled Device) or complementary metal oxide semiconductor element (CMOS, Complementary Metal Oxide Semiconductor), as for respectively isolating the 12 radium-shine light sources of cutting apart 23 at wafer 1, then can be lower powered little radium-shine laser (Pico second laser), this miniature radium-shine Wavelength of Laser is between 200nm～800nm, and the wavelength of preferred embodiment can be 355nm, also can be the miniature radium-shine laser of 266nm or 532nm wavelength.
Moreover; when the wafer 1 of semiconductor element after upset; oppositely be attached on the glued membrane 21 that is positioned at workbench 2 with first surface 11; can be on the second surface 13 of wafer 1 opposite side; coating has the photosensitiveness of being subjected to and opaque water-soluble medium 3; then has the water-soluble material that the water-soluble medium 3 that is subjected to photosensitiveness can be the organic protection liquid of water soluble polymer or water-soluble organosilane ester protection liquid etc.; and protection liquid comprises polyvinyl alcohol; dyestuffs etc. become branch to constitute; and have high absorptance and reach 90%; promote the absorptance that absorbs the miniature radium-shine laser of being launched by thunder light source 23 of low-power; for radium-shine light source 23 by behind the medium 3; more concentrated is radiated on the transparent base material 101; respectively isolate 12 to being positioned on the wafer 1 accurately again; conveniently carry out the radium-shine processing of cutting apart; because radium-shine light source 23 is lower powered miniature radium-shine laser; only has extremely low temperature; can not produce pyrocaloric effect; then can be to peripheral element such as the semiconductor first type layer 102 of wafer 1; generations such as the second type layer 104 or butt joint layer 105 destroy or cause burned black phenomenon; after division processing is finished; and with wafer 1 burst apart (Break); separate; can be after wafer 1 be cut apart moulding complex crystal grain 4; keep original luminosity; be difficult for taking place the phenomenon of brightness decay; can promote the product yield of crystal grain; more convenient will cutting apart; detect; crystal grain after the screening carries out follow-up routing type structure dress (Wire-bonding); crystal covering type structure dress (Flie-chip); procedure for processing such as encapsulation or packing.
Therefore, the above only is preferred embodiment of the present invention, non-so limit to claim of the present invention, the manufacture method of semiconductor element of the present invention, utilize the transparent base 101 of the wafer 1 of semiconductor element, oppositely attach the glued membrane 21 that is positioned on the workbench 2 with first surface 11 upset backs, be subjected to the water-soluble medium 3 of photosensitiveness again in opposite side second surface 13 coatings up, and by the radium-shine light source 23(Pico of low-power second laser), high absorptance (reaching 90%) via medium 3, make radium-shine light source 23 at one or one above isolation road 12 on the wafer 1 of semiconductor element, carry out division processing, can reach wafer 1 is divided into a plurality of crystal grain 4, and do not destroy the purpose of the semiconductor element of wafer 1 periphery, avoiding wafer 1 periphery to be subjected to pyrocaloric effect influences, and keep cutting apart the luminosity of each crystal grain 4 of back, induced attenuation not, and the water-soluble medium 3 that wafer 1 is coated with in second surface 13, wafer 1 cut apart finish after, can remove medium 3 by the washing operation utmost point, do not influence the printing opacity brightness of cutting apart each crystal grain 4 of back, so can reach the step of aforementioned effect such as, detection mode, method or device etc. are contained by the present invention all should, the simple and easy modification of this kind and equivalent structure change, all should in like manner be contained in the claim of the present invention, close and give Chen Ming.
The manufacture method of the plate conductor element of the invention described above is implemented in reality, when using, is had following advantage, as:
(1) passes through the wafer 1 of semiconductor element after oppositely, be subjected to the water-soluble medium 3 of photosensitiveness at second surface 13 applying implenents, and the radium-shine light source 23(Pico of cooperation low-power Second laser), high absorptance by medium 3 is concentrated radium-shine light source 23, at one or one above isolation road 12 on the wafer 1, cut apart operation, and the radium-shine light source 23 of low-power, can not cause wafer 1 peripheral semiconductor element destroyed, after cutting apart a plurality of crystal grain 4 of moulding for wafer 1, can promote the product yield of a plurality of crystal grain 4.
(2) wafer 1 of semiconductor element at second surface 13 water-soluble medium 3 that is subjected to photosensitiveness that is coated with, after the cutting apart operation and finish of wafer 1, can be removed medium 3 by washing operation, and the printing opacity brightness of a plurality of crystal grain 4 in back is cut apart in unlikely influence.
Therefore; the present invention is the design of cutting apart the operation processing procedure that is primarily aimed at semiconductor element; wafer by semiconductor element is reverse; attach the glued membrane that is positioned at workbench with first surface; and be subjected to photosensitiveness in wafer opposite side second surface applying implenent up; the water-soluble medium of high absorptance; and cooperate lower powered radium-shine light source; cut apart operation at the isolation road more than one or one on the wafer; and the semiconductor element of avoiding radium-shine light source to destroy wafer perimeter is main key protection point; and the product that wafer is divided into behind a plurality of crystal grain has good printing opacity brightness; be only to make the processing procedure of the wafer of semiconductor element have the function that improves the high yield of product; but the above only is preferred embodiment of the present invention; non-so namely limit to claim of the present invention; so simple and easy modification of using specification of the present invention and accompanying drawing content to do such as; replace and principle of equal effects variation; all should in like manner be contained in the claim of the present invention, close and give Chen Ming.
In sum, the manufacture method of the above-mentioned semiconductor element of the present invention is when practical application, operation, enforcement, for reaching its effect and purpose really, so the present invention really is the research and development of a practicality excellence, for meeting the application important document of patent of invention, filing an application in the whence in accordance with the law, expects that examining committee grants accurate the present invention early, to ensure inventor's arduous research and development, if an ancient unit of weight office examine committee have any check doubtful, the indication of please writing to us without sparing, settled the doing one's utmost of inventor cooperates, and the true feeling moral is just.
Claims (9)
1. the manufacture method of a semiconductor element is characterized in that, its step is as follows:
(a) wafer with semiconductor element carries out the etch preset degree of depth by first surface, with the isolation road more than the moulding together;
(b) carry out light, electric performance test at one above isolation road on the wafer;
(c) wafer that can use after will detecting again oppositely attaches the glued membrane that is positioned on the workbench with first surface;
(d) opposite side up the second surface of wafer after oppositely namely is coated with the medium that is subjected to photosensitiveness;
(e) by detector by workbench bottom, the default moulding of first surface that detects wafer is above isolation road together, and cooperates the radium-shine light source of low-power, carries out cutting processing via medium at above together isolation road;
(f) medium of the second surface of wafer coating is removed, and at the above road that isolates together or together carrying out wafer and burst apart and separate, and a plurality of crystal grain finished products of moulding;
(g) a plurality of crystal grain finished products after the moulding are turned to again, place up with first surface, and detect the outward appearance of each crystal grain finished product, carry out the screening of crystal grain finished product;
(h) a plurality of crystal grain finished products carry out the following process processing procedure.
2. the manufacture method of semiconductor element according to claim 1, it is characterized in that, this semiconductor element is the stacked wafer of moulding, and the wafer of semiconductor element comprises transparent base material, the semi-conductive first type layer, composition surface, the semi-conductive second type layer and butt joint layer.
3. the manufacture method of semiconductor element according to claim 2 is characterized in that, this transparent base material is sapphire, glass, quartz or synthetic quartz.
4. the manufacture method of semiconductor element according to claim 1 is characterized in that, the wafer first surface of this step (c) oppositely is attached at transparent adhesive film, again wafer and transparent adhesive film is placed in the transparent sucker with absorption positioning action.
5. the manufacture method of semiconductor element according to claim 1; it is characterized in that; the photosensitiveness medium that is subjected to of this step (d) is the medium of the organic protection liquid of water soluble polymer or water-soluble organosilane ester protection liquid; protection liquid comprises the composition of polyvinyl alcohol and dyestuff, and protection liquid is to have the opaque medium that is subjected to photosensitiveness.
6. the manufacture method of semiconductor element according to claim 1 is characterized in that, the first surface of the wafer of this step (e) is for presetting the isolation road that moulding dents into the wafer internal layer, to carry out brightness and the wavelength measurement of wafer at this isolation road.
7. the manufacture method of semiconductor element according to claim 1 is characterized in that, the detector of this step (e) is charge coupled cell or complementary metal oxide semiconductor element.
8. the manufacture method of semiconductor element according to claim 1 is characterized in that, the radium-shine light source of low-power of this step (e) is miniature radium-shine laser, and radium-shine light wavelength is between 200nm～800nm.
9. a semiconductor element comprises transparent base, semi-conducting electrode layer, butt joint layer, it is characterized in that:
The two relative side of this transparent base has first top layer and second top layer respectively;
This semi-conducting electrode layer is first top layer that takes shape in transparent base, this semi-conducting electrode layer is provided with the first stacked in regular turn type layer, composition surface and the second type layer, and this semi-conducting electrode layer becomes the isolation road of cutting apart target more than having together, and isolate the road and go deep into the second type layer again by the first type layer, composition surface, and go deep into the degree of depth of the second type layer, 2 μ m～10 μ m;
This butt joint layer is for to take shape in the semi-conducting electrode layer with respect to the opposite side surface of transparent base.
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| CN 201010553053 CN102479885B (en) | 2010-11-22 | 2010-11-22 | Method for manufacturing semiconductor element |
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| CN 201010553053 CN102479885B (en) | 2010-11-22 | 2010-11-22 | Method for manufacturing semiconductor element |
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| CN102479885B true CN102479885B (en) | 2013-08-07 |
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| CN105304540A (en) * | 2015-09-22 | 2016-02-03 | 常州星海电子有限公司 | Glass passivation chip reverse cutting method without positioning lines |
| CN105789390B (en) * | 2016-05-05 | 2018-08-07 | 扬州乾照光电有限公司 | A kind of production technology of quaternary system LED chip |
| JP2018010899A (en) * | 2016-07-11 | 2018-01-18 | 株式会社ディスコ | Light-emitting diode chip manufacturing method and light-emitting diode chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498387B1 (en) * | 2000-02-15 | 2002-12-24 | Wen-Ken Yang | Wafer level package and the process of the same |
| CN1481290A (en) * | 2000-12-15 | 2004-03-10 | Laser machining of semiconductor materials | |
| CN101452975A (en) * | 2007-12-04 | 2009-06-10 | 杨秋忠 | Wafer stage encapsulation LED chip and manufacturing method thereof |
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| US7125747B2 (en) * | 2004-06-23 | 2006-10-24 | Advanced Semiconductor Engineering, Inc. | Process for manufacturing leadless semiconductor packages including an electrical test in a matrix of a leadless leadframe |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498387B1 (en) * | 2000-02-15 | 2002-12-24 | Wen-Ken Yang | Wafer level package and the process of the same |
| CN1481290A (en) * | 2000-12-15 | 2004-03-10 | Laser machining of semiconductor materials | |
| CN101452975A (en) * | 2007-12-04 | 2009-06-10 | 杨秋忠 | Wafer stage encapsulation LED chip and manufacturing method thereof |
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