CN102412136B - Chemical mechanical polishing apparatus for eliminating protuberance of metal surface and method thereof - Google Patents
Chemical mechanical polishing apparatus for eliminating protuberance of metal surface and method thereof Download PDFInfo
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- CN102412136B CN102412136B CN201110123676.6A CN201110123676A CN102412136B CN 102412136 B CN102412136 B CN 102412136B CN 201110123676 A CN201110123676 A CN 201110123676A CN 102412136 B CN102412136 B CN 102412136B
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Abstract
The invention provides a chemical mechanical polishing apparatus for eliminating a protuberance of a metal surface and a method thereof. The chemical mechanical polishing apparatus comprises a grinding device and an annealing device. The annealing device is connected with the grinding device through a wafer conveyer; and an annealing chamber is arranged at the annealing device and is used for bearing a metal wafer to enable annealing processing to be carried out on the metal wafer in the chamber. The annealing device is used for carrying out annealing processing after the wafer is ground, so that stresses of a metal interconnection layer can be fully released, wherein the stresses are accumulated on the wafer; therefore, an unstable state inside the metal interconnection layer can take full reaction; and the full reaction includes that a protuberance is formed at the surface of the metal interconnection layer due to the stresses inside the metal interconnection layer, so that a stable state of the metal interconnection layer is realized. According to the invention, during the wafer polishing process, annealing and grinding polishing are carried out alternatively; internal stresses in the metal interconnection layer are released by the annealing process; and the generated surface protuberance caused by the internal stresses of the metal interconnection layer is removed by grinding processing again; therefore, smoothness of the metal interconnection layer surface can be ensured and thus, the performance of the manufactured chip can be improved.
Description
Technical field
The present invention relates to a kind of method for manufacturing integrated circuit, relate in particular in ic manufacturing process, eliminate chemical mechanical polishing apparatus and the method for the metal surface thrust of wafer.
Background technology
In field of semiconductor manufacture, along with the raising of integrated level, for signal transmission interconnected between each device, have higher requirement.In current field of semiconductor manufacture, copper is in view of its low resistance and good electron mobility, and the copper interconnection technique of having introduced double damask structure is in semiconductor is manufactured, and becomes the most frequently used interconnected metal.But in manufacture process, we find the characteristic due to copper, in interconnection layer metal, copper is after planarization, still remaining in its metal interconnection layer have larger internal stress, and in semiconductor subsequent technique, at the temperature with higher, these internal stresss are discharged, thereby the surface of the metal interconnection layer after planarization forms the thrusts (hillock) such as spine.Wherein, for part metals, as copper, just himself there is the characteristic of self annealing (self-anneal),, at it, carry out after planarization, in the placement of long-time (being greater than 8 hours), slowly produce the thrusts such as stimuli.And the generation of these hillock can make processing procedure (such as the growth of insulating barrier) afterwards be affected, also likely cause copper to be diffused in dielectric simultaneously, and etching stop layer, passivation layer and the preparation that is embedded in the soldering pad layer in described passivation layer, thereby affect semiconductor chip electrically.And along with reducing of semiconductor dimensions, hillock also more and more easily becomes critical defect, affects the overall performance of peninsula body.So, effectively eliminate the generation of hillock, become and affect one of key factor of wafer yield.
Chinese patent CN 101740479 A disclose a kind of manufacture method of semiconductor device, at chemico-mechanical polishing (Chemical Mechanical Polish, CMP) or after part CMP, the method that wafer is annealed in forming the equipment of described etching stop layer.But in this invention, realize the annealing of metal interconnection layer and need to pass through different boards, as chemical vapor deposition machine station (Chemical Vapor Deposition, CVD), and use back and forth between CMP board and CVD board, in this process, reduced on the one hand the service efficiency of board, increase extra annealing device, increased manpower and materials cost, and wafer is in manufacture process, in CMP board and CVD board, come and go, the stand-by period of wafer between board and board, improved the probability that hillock produces, thereby affected polishing effect.
Summary of the invention
The invention provides a kind of chemical mechanical polishing apparatus and method of eliminating the metal surface thrust of semiconductor crystal wafer, on CMP board, be provided with annealing device, chemico-mechanical polishing and annealing are hocketed, effectively discharge the internal stress of metal, and thereby timely and effective elimination is because of the thrust (Hillock) of metal internal stress in metal surface generation, improve the polishing effect of wafer, thereby in solution prior art after metal interconnection layer planarization, because metal internal stress makes the metal surface after polishing, form Hillock, affect the problem of semiconducting behavior.
A kind of chemical mechanical polishing apparatus and method of eliminating metal surface thrust of the present invention is achieved through the following technical solutions its object:
Eliminate a chemical mechanical polishing apparatus for metal surface thrust, wherein, comprise lapping device and annealing device; Described annealing device is connected with described lapping device by wafer handler; Described annealing device is provided with anneal chamber, for bearing metal wafer, anneals therein; Wherein, annealing device for carrying out annealing in process after grinding wafer polishing, the stress that makes to be accumulated in the metal interconnection layer on wafer fully discharges, so that the labile state of metal interconnection layer inside is fully reacted, comprise due to the release of stress and form thrust on described metal interconnection layer surface, thereby make metal interconnection layer in stable state.Described wafer handler for conventional between each position of CMP board the conveyer of wafer, as handgrip.
The chemical mechanical polishing apparatus of above-mentioned elimination metal surface thrust, wherein, described annealing device is also provided with cushion chamber, between described cushion chamber and described grinding module and described anneal chamber, is respectively equipped with wafer handler.
The chemical mechanical polishing apparatus of above-mentioned elimination metal surface thrust, wherein, is filled with inert gas in described cushion chamber, to prevent that metal interconnection layer and the air of the wafer after grinding and polishing from reacting.The gas that described inert gas general reference does not react with metal, comprises the gas that inert gases such as nitrogen and helium, neon, argon gas etc. do not react with metal.
Utilize the chemical mechanical polishing apparatus of the elimination metal surface thrust described in claim 1 to eliminate a method for metal surface thrust, wherein, in semiconductor fabrication, grinding wafer polishing and annealing process alternately carry out continuously, and it comprises the following steps:
Step 1: form on semiconductor crystal wafer after metal interconnection layer, adopt described lapping device to carry out pre-polish(ing) to wafer, remove excess metal and other unnecessary dielectric layer parts on described wafer;
Step 2: the wafer of pre-polish(ing) is written in described anneal chamber, high annealing, the internal stress under fully discharging in metal interconnection layer, fully manifests the labile state in described metal interconnection layer, and forms thrust on metal interconnection layer surface;
Step 3: the wafer after annealed is written into described lapping device again, to the further grinding and polishing of described metal interconnection layer, removes the thrust that metal interconnection layer surface forms in step 2.
The method of above-mentioned elimination metal surface thrust, wherein, between described step 1 and step 2, when described wafer carries out after pre-polish(ing), if desired annealing and described wafer can not anneal time, are written into described wafer in described cushion chamber, to prevent the wafer exposed to air after polishing and to react at once, as redox reaction, more described wafer is written in described anneal chamber and is annealed by described cushion chamber afterwards.
The method of above-mentioned elimination metal surface thrust, wherein, when the metal interconnection layer substep of described wafer is repeatedly during grinding and polishing, if wafer is after carrying out a grinding and polishing, need annealing in process, repeating said steps one step 3 process, makes wafer after grinding and polishing, carry out annealing in process, and the metal interconnection layer internal stress of wafer fully discharges and reaches stable state.It should be noted that in polishing process, each polishing condition and polishing are different, make the metal interconnection layer situation of wafer different, therefore for the wafer after polishing, anneals the actual conditions that need to need according to glossing from definite.Therefore for the metal interconnection layer substep of wafer repeatedly during polishing, for the wafer after polishing each time, optionally carry out annealing in process, if after each polishing all need wafer to carry out annealing in process, in whole polishing process, grinding and polishing and annealing process hocket in succession, until whole polishing process completes.
The method of above-mentioned elimination metal surface thrust, wherein, described anneal chamber temperature is controlled in 200 ~ 600 ℃.
The method of the elimination metal surface thrust that mountain is stated, wherein, wafer annealing time in described anneal chamber is controlled in 1 ~ 200 second.
The method of above-mentioned elimination metal surface thrust, wherein, described metal interconnection layer is the alloy of copper or copper.
Adopt that the present invention is a kind of eliminates the chemical mechanical polishing apparatus of metal surface thrust and the advantage of method is:
Adopt a kind of chemical mechanical polishing apparatus and method of eliminating metal surface thrust of the present invention, on chemical-mechanical polishing mathing platform, annealing device is set, in metal interconnection layer planarization process, adopt annealing process fully to discharge the internal stress in metal interconnection layer, stable metal interconnection layer internal state, and and timeliness eliminate the thrust that metal interconnection layer surface produces because of internal stresses release, improve the polishing effect of metal interconnection layer, thereby guarantee chip performance; And realize simultaneously and grinding and annealing on a board, can on time and space, improve polishing efficiency, save process costs.
Accompanying drawing explanation
Fig. 1 is the structural representation that the present invention eliminates the chemical mechanical polishing apparatus board of metal surface thrust.
Embodiment
As shown in Figure 1, a kind of chemical mechanical polishing apparatus of eliminating metal surface thrust of the present invention, comprises lapping device 1 and annealing device 2; Described annealing device 2 is provided with an anneal chamber 21; Described anneal chamber 21 is provided with temperature control system, for regulating preference temperature to be used for wafer annealing in process; Described anneal chamber 21 is connected with described lapping device 1 by wafer handler, and described wafer handler can be that handgrip etc. is usually used in the device that wafer is implemented in the transmission between each position in polishing process.In use, by described wafer handler, realize wafer and transmit between described anneal chamber 21 and lapping device 1, grinding and polishing and annealing process are hocketed.
Described annealing device 1 also comprises a cushion chamber 22, and 21 of described cushion chamber 22 and described grinding module 1 and described anneal chamber are respectively equipped with wafer handler.And in described cushion chamber 22, be filled with inert gas, be preferably filled with nitrogen.When wafer is after grinding; must be through cleaning and drying process; wafer now may and be not suitable for putting into immediately described anneal chamber 21; carry out annealing in process; but the copper in waiting process after grinding may may occur such as reactions such as redox in air; thereby metal interconnection layer is sustained damage; thereby have influence on the performances such as signal transmission of chip; now the wafer after grinding can be put into described cushion chamber 22; wait for annealing, protected well metal interconnection layer to be without prejudice.For this equipment, wafer or the metal depositing on it or other dielectric layers are being carried out repeatedly in the step of CMP, after can being chosen at wherein a certain step or a few step CMP, utilize 2 pairs of metals of this annealing device or other dielectric layers to carry out annealing in process, and other CMP steps both can have been selected to carry out annealing in process and also can not carried out annealing in process.
The present invention also comprises the method for utilizing the chemical mechanical polishing apparatus of above-mentioned elimination metal surface thrust to eliminate the thrust that metal surface produces in metal surface because of metal inside stress.The method scheme is, in ic manufacturing process, grinding wafer polishing and annealing process are alternately carried out continuously, thereby guarantee in the manufacture process of chip, in interconnection layer, metal inside stress discharges in time, and by follow-up abrasive polishing process, the thrusts such as spine of the interconnection layer metal surface causing due to internal stresses release are polished, guarantee the profile pattern of interconnected metal interconnection layer.
Its concrete steps are:
Step 1: form on semiconductor crystal wafer after metal interconnection layer, adopt 1 pair of wafer of described lapping device to carry out pre-polish(ing), remove excess metal and other unnecessary wafer segments;
Step 2: until described wafer after pre-polish(ing), described wafer is put into described anneal chamber 21, high annealing, the internal stress of described metal interconnection layer is fully discharged, comprise the thrusts such as burr that may form on described metal interconnection layer surface due to the release of stress, thereby make metal interconnection layer in stable state;
Step 3: the metal wafer after annealed is written into again in the anneal chamber 21 of described lapping device 1, to the further grinding and polishing of described wafer, remove in described annealing process, the thrusts such as spine that described metal interconnection layer surface forms, by the metal interconnection layer surface rubbing of described wafer, guaranteed the planarization on metal interconnection layer surface.
Between described step 1 and step 2, when described wafer carries out after pre-polish(ing), also through cleaning, drying and other steps, and be not suitable for annealing immediately, or now may, because anneal chamber 21 is being used and cannot put into immediately described anneal chamber 21, carry out annealing in process.And in waiting for the process of annealing process, the metal after polishing may occur to react such as redox etc. with air, thereby make metal interconnection composition of layer rotten, thus the performance of the chip that impact is made.Now first described wafer is written in described cushion chamber 22, in described cushion chamber 22, be filled with the inert gases such as nitrogen, can effectively prevent metal interconnection layer to react, after it is applicable to annealing, more described wafer is written into annealing in described anneal chamber 21 by described cushion chamber 22.
When the metal interconnection layer substep of described wafer is repeatedly during grinding and polishing, optionally the wafer after polishing is each time carried out to annealing in process, until complete whole polishing process; Wherein, if wafer is after carrying out a grinding and polishing, need annealing in process, repeating said steps one, to step 3 process, makes wafer after grinding and polishing, carry out annealing in process, and the metal interconnection layer internal stress of wafer fully discharges and reaches stable state.
And general described anneal chamber 21 temperature are controlled in 200 ~ 600 ℃.Its wafer annealing time in described anneal chamber 21 is controlled in 1 ~ 200 second, and this can be determined by concrete condition, and existing technology can accurately guarantee that its annealing time controls.
Like this after abrasive polishing process, annealing process hocket, guarantee the abundant release of internal stress in metal interconnection layer, make its internal state stable, in the follow-up preparation technology of integrated circuit, can because making metal interconnection layer surface, the stress in described metal interconnection layer there is not thrust again, guaranteed its profile pattern, thus the performance of the chip that assurance is made.And a kind of chemical mechanical polishing apparatus and method of eliminating metal surface thrust of the present invention is specially adapted to at present the most frequently used copper or the metal interconnection layer of its alloy.Adopt the present invention can guarantee the release of internal stress in the metal interconnection layers such as copper, and eliminate in time on metal interconnection layer surface, form therefrom the thrusts such as spine, thereby guarantee the metal interconnection layer profile pattern of finally making, guarantee the performance of the chip after making.
Above specific embodiments of the invention be have been described in detail, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and alternative also all among category of the present invention.Therefore, equalization conversion and the modification done without departing from the spirit and scope of the invention, all should contain within the scope of the invention.
Claims (6)
1. a method of eliminating metal surface thrust, comprise a chemical mechanical polishing apparatus, described device comprises lapping device and annealing device, in described annealing device, be provided with anneal chamber and cushion chamber, between described annealing device and described lapping device, by wafer handler, be connected, it is characterized in that, in semiconductor fabrication, grinding wafer polishing and annealing process alternately carry out continuously, and it comprises the following steps:
Step 1: form on semiconductor crystal wafer after metal interconnection layer, adopt described lapping device to carry out pre-polish(ing) to wafer, remove excess metal and other unnecessary dielectric layer parts on described wafer;
Step 2: the wafer of pre-polish(ing) is written in described anneal chamber, and high annealing, fully discharges the internal stress in described metal interconnection layer, and the labile state in described metal interconnection layer is fully manifested, and form thrust on metal interconnection layer surface;
Step 3: the wafer after annealed is written into described lapping device again, to the further grinding and polishing of described metal interconnection layer, removes the thrust that metal interconnection layer surface forms in step 2.
2. the method for elimination according to claim 1 metal surface thrust, it is characterized in that, between described step 1 and step 2, when described wafer carries out after pre-polish(ing), if desired annealing and described wafer when can not anneal at once, described wafer is written in described cushion chamber, to prevent the wafer exposed to air after pre-polish(ing) and to react, more described wafer is written in described anneal chamber and is annealed by described cushion chamber afterwards.
3. the method for elimination according to claim 1 metal surface thrust, it is characterized in that, when the metal interconnection layer substep of described wafer is repeatedly during grinding and polishing, if wafer is after carrying out a grinding and polishing, need annealing in process, repeating said steps one is to step 3 process.
4. the method for elimination according to claim 1 metal surface thrust, is characterized in that, described anneal chamber temperature is controlled in 200～600 ℃.
5. the method for elimination according to claim 1 metal surface thrust, is characterized in that, wafer annealing time in described anneal chamber is controlled in 1～200 second.
6. the method for elimination according to claim 1 metal surface thrust, is characterized in that, described metal interconnection layer is the alloy of copper or copper.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110123676.6A CN102412136B (en) | 2011-05-13 | 2011-05-13 | Chemical mechanical polishing apparatus for eliminating protuberance of metal surface and method thereof |
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| CN201110123676.6A CN102412136B (en) | 2011-05-13 | 2011-05-13 | Chemical mechanical polishing apparatus for eliminating protuberance of metal surface and method thereof |
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| CN102412136A CN102412136A (en) | 2012-04-11 |
| CN102412136B true CN102412136B (en) | 2014-03-12 |
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| CN112420547A (en) * | 2019-08-23 | 2021-02-26 | 盛美半导体设备(上海)股份有限公司 | Annealing chamber with isolating door plate |
| CN112708926A (en) * | 2020-12-16 | 2021-04-27 | 上海华力微电子有限公司 | Buffer device for copper electroplating machine table and copper electroplating machine table |
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| JP4513145B2 (en) * | 1999-09-07 | 2010-07-28 | ソニー株式会社 | Semiconductor device manufacturing method and polishing method |
| US6811680B2 (en) * | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
| WO2002090623A1 (en) * | 2001-05-09 | 2002-11-14 | Ebara-Udylite Co., Ltd. | Copper plating bath and method for plating substrate by using the same |
| US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| KR20050004156A (en) * | 2002-05-17 | 2005-01-12 | 가부시키가이샤 에바라 세이사꾸쇼 | Substrate processing apparatus and substrate processing method |
| US7105446B2 (en) * | 2003-09-04 | 2006-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for pre-conditioning CMP polishing pad |
| FR2863771B1 (en) * | 2003-12-10 | 2007-03-02 | Soitec Silicon On Insulator | PROCESS FOR PROCESSING A MULTILAYER WAFER HAVING A DIFFERENTIAL OF THERMAL CHARACTERISTICS |
| JP4860113B2 (en) * | 2003-12-26 | 2012-01-25 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor integrated circuit device |
| CN1983550A (en) * | 2005-12-14 | 2007-06-20 | 中芯国际集成电路制造(上海)有限公司 | Method for improving reliability and finished-product rate and eliminating copper offset |
| JP5100057B2 (en) * | 2006-08-18 | 2012-12-19 | 東京エレクトロン株式会社 | Manufacturing method of semiconductor device |
| CN101740479B (en) * | 2008-11-14 | 2012-10-31 | 中芯国际集成电路制造(北京)有限公司 | Method for manufacturing semiconductor device |
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