CN102374909A - Micromachine-based electromagnetic excitation resonant pressure sensor - Google Patents
Micromachine-based electromagnetic excitation resonant pressure sensor Download PDFInfo
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- CN102374909A CN102374909A CN2010102514995A CN201010251499A CN102374909A CN 102374909 A CN102374909 A CN 102374909A CN 2010102514995 A CN2010102514995 A CN 2010102514995A CN 201010251499 A CN201010251499 A CN 201010251499A CN 102374909 A CN102374909 A CN 102374909A
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Abstract
The invention discloses a micromachine-based electromagnetic excitation resonant pressure sensor, and relates to a micromachine sensing technology. The sensor is provided with three groups of resonators which are clamped by anchor points on a pressure membrane, arranged on a diagonal line of a frame, and provided with electrodes. The resonators applied with excitation signals are excited by magnetic field force under the action of an external magnetic field; and when pressure to be tested is present outside, the pressure membrane generates strain, and the strain is transmitted to the resonators through the anchor points to change the rigidity of the resonators, so that the natural frequency of the resonators is changed, and the pressure to be tested outside can be measured by detecting the frequency of output signals of vibration pickup electrodes. The sensor has two packaging modes, and is subjected to stress isolation through a ceramic ring of which the coefficient of thermal expansion is basically same as monocrystalline silicon. The resonators of the sensor work in a horizontal vibration mode; the shift caused by external factors such as temperature and the like is inhibited through differential output, and the sensitivity is improved; and the resonators are released by a heavy boron-diffusion self-stop corrosion technology, a process is simple and the consistency is high.
Description
Technical field
The invention belongs to the micromechanics field of sensing technologies, relate to a kind of electric magnetization resonance beam type pressure transducer based on micro-electronic mechanical skill (MEMS).
Background technology
Resonance beam type pressure transducer all is to comprise pressure sensitive film resonant beam two parts; Pressure sensitive film can produce strain when extraneous testing pressure changes; Strain is passed to the rigidity that resonator can change resonator; Thereby change the frequency of resonator, the change of frequency that detects resonator can obtain the size of extraneous testing pressure.
Utilize the Microstructure Silicon Resonant Beam Pressure Sensors of MEMS fabrication techniques, up to the present mainly adopt monocrystalline silicon and polycrystalline silicon material to be made.The micromechanical silicon resonance type pressure transducer is mainly used in the measurement of high-precision pressure, because it has frequency output, and is easy to carry out digitized processing; Adopt MEMS technology, the sensor realization is microminiaturized, integrated being easy to produced in batches thereby can make.
Adopt single crystal silicon material to make the resonance beam of pressure transducer, adopt resonance beam and pressure membrane separately to make more, through bonding techniques it is become one at last.Its shortcoming is that bonding is introduced bonding stress easily, can reduce the stability of sensor; In addition, the bonding technology process is comparatively complicated.
Adopt polycrystalline silicon material to make the resonance beam of pressure transducer, adopt surface processing technique to carry out the processing of resonance beam more at pressure membrane superficial growth polysilicon.Its shortcoming is that resonance beam is prone to produce mechanical couplings with pressure membrane, and the surface processing technique process is very complicated.
In addition, when external environment variation (except that air pressure changes), resonance type pressure sensor also can produce output, promptly produces drift, thereby influences the stability of sensor.
Summary of the invention
The objective of the invention is to disclose a kind of electric magnetization resonance type pressure sensor,, improve the performance of sensor to solve the problems referred to above that prior art exists based on micromechanics.
For achieving the above object, technical solution of the present invention is:
A kind of electric magnetization resonance type pressure sensor based on micromechanics, it comprises anchor point (2), resonator (3), pressure sensitive film (4) and framework (5), wherein:
Level is provided with pressure sensitive film (4) at framework (5) madial wall middle part; On a diagonal line of pressure sensitive film (4); Be positioned at pressure sensitive film (4) upper surface middle part and be provided with two anchor points (2), two anchor points (2) upper end is connected with many group resonators (3) with the cornerwise end points of corresponding framework (5) upper end;
The end to end straight line setting of many group resonators (3), be cross-placed on framework (5), anchor point (2), anchor point (2), framework (5) between, move towards to overlap with an above-mentioned diagonal line of pressure sensitive film (4);
The drive end of many group resonators (3) is electrically connected with driving circuit, another pick-up end, and the resonance frequency of output resonator is electrically connected with testing circuit.
Described pressure transducer, its said many group resonators (3) are three groups, structure is identical, is two beams or four beam tuning fork structures, is H shape or two H parallel shape; Resonator (3) upper surface is installed with electrode, and electrode one end is that drive end is electrically connected with driving circuit, and the other end is the pick-up end, is electrically connected with testing circuit.
Described pressure transducer, the resonator of its said four beam tuning fork structures (3), the electrode that its upper surface sets firmly takes the shape of the letter U, and two ends are positioned at the same side.
Described pressure transducer, its said anchor point (2), pressure sensitive film (4) material are monocrystalline silicon; Resonator (3) and framework (5) are the dense boron diffusion silicon (101) of tape insulation dielectric layer; Insulating medium layer is the double hyer insulation material that monox (102) and silicon nitride (103) are formed.
A kind of method for packing of described pressure transducer, it is a Can Vacuum Package method, comprises step:
A) go up bonding magnet (12) and ceramic ring (13) with epoxy adhesive at the base that has bobbin (14) (10);
B) weld or the bonding method of tackifier with glass solder at ceramic ring (13) upper surface, affixed with electric magnetization resonance type pressure sensor chip (11) lower surface;
C), the electrode on the chip (11) is connected with bobbin (14) with spun gold (15) with spun gold ball bond method;
D) cover the member on the base (10) with pipe cap (16), adopt store energy welding or epoxy adhesive the joint to be sealed affixed;
E) tail pipe from pipe cap (16) is evacuated pipe cap chamber (17), adopt the technology of colding pressing the sealing of pipe cap (16) tail pipe place, thereby whole sensor chip (11) just is sealed in the vacuum chamber (17), gets finished product.
A kind of method for packing of described pressure transducer, it is silicon lid Vacuum Package method, comprises step:
A) go up bonding magnet (12) and ceramic ring (13) with epoxy adhesive at the base that has bobbin (14) (10);
B) weld or the bonding method of tackifier with glass solder at ceramic ring (13) upper surface, affixed with electric magnetization resonance type pressure sensor chip (11) lower surface;
C), the electrode on the chip (11) is connected with bobbin (14) with spun gold (15) with spun gold ball bond method;
D) cover on electric magnetization resonance type pressure sensor chip (11) with silicon lid (18); In vacuum chamber with bonding or adhesive bonding method; Silicon lid (18) lower periphery and framework (5) upper surface are fixed as one, be sealed in resonator (3) in the annular seal space (17) of silicon lid (18);
E) cover the pipe cap (16) of no tail pipe again in the top of silicon lid (18), pipe cap (16) covers the member on the base (10), and employing store energy welding or epoxy adhesive seal affixed to the joint, get product.
The method for packing of described pressure transducer, its two kinds of method for packing have all adopted the thermal expansivity stupalith identical with single crystal silicon material to isolate thermal stress.
The invention has the advantages that:
Diffuse si material resonator: beam film one, avoid the bonding technology process, thereby avoided the introducing of bonding stress;
Dense boron diffusion etch stop technology discharges resonator: technology is simple, high conformity;
The structural design of three groups of beams (wherein put the beams in place and be spare beam in one group of limit): adopt two groups of beams to carry out difference output, the drift that environmental factors such as reduction temperature cause;
The resonator diagonally opposing corner is placed: discharge resonator when being convenient to anisotropic etch;
Resonator structure has adopted the tuning-fork type design: the mechanical quality factor that improves resonator.
Description of drawings
Fig. 1 is an electric magnetization resonance type pressure sensor chip top view;
Fig. 2 is an electric magnetization resonance type pressure sensor A-A ' cross-sectional view;
Fig. 3 is two kinds of resonator figure of electric magnetization resonance type pressure sensor;
Fig. 4 be on two kinds of resonators of electric magnetization resonance type pressure sensor for carrying out the distribution of electrodes figure that exciting and pick-up design;
Fig. 5 is the manufacture craft process flow diagram of electric magnetization resonance type pressure sensor;
Fig. 6 (a) is the Can encapsulation step synoptic diagram of electric magnetization resonance type pressure sensor;
Fig. 6 (b) is the silicon lid Vacuum Package step synoptic diagram of electric magnetization resonance type pressure sensor;
Fig. 7 is the diagrammatic cross-section that bonding has the silicon lid on the electric magnetization resonance type pressure sensor.
Embodiment
To combine the accompanying drawing explanation detailed in addition below to the present invention.
Like Fig. 1 is the embodiment that the present invention is based on the electric magnetization resonance type pressure sensor of micro-electronic mechanical skill (MEMS); Comprise three groups of identical resonators 3, pressure sensitive film 4, anchor point 2 and framework 5, sensor chip adopts MEMS technology on monocrystalline substrate 1, to be made.
Resonator material is the dense boron diffusion silicon of tape insulation medium.The insulating medium material adopts silicon nitride or silicon dioxide.Because the anisotropy that is shown in the wet etching of monocrystalline silicon, three groups of resonators 3 have adopted the mode that is on the diagonal line that 45 ° of diagonally opposing corners are distributed in square sensor chip, like Fig. 1, thereby are easy to the release of resonator; Resonator is supported by anchor point 2 and framework 5 respectively, like Fig. 2.
Like Fig. 2, when there was testing pressure in the external world, pressure sensitive film 4 can produce strain, is delivered on the resonator 3 through anchor point 2, makes the stiffness change of resonator, thereby changed the natural frequency of resonator.Natural frequency through detecting resonator changes, and just can record the size of extraneous testing pressure.
Like Fig. 3; Resonator design two kinds of tuning-fork type girder constructions; Two beams are formed " H " the simple duplex tuning fork structure 301 of type and by two " H " four beam tuning fork structures 302 that the type beam is formed, the tuning fork structure resonator is coupled vibrational energy; Reduce the wastage, thus the mechanical quality factor of raising sensor.
Like Fig. 4, sputter has metal electrode on the resonator, when resonator places vertical magnetic field, adds drive signal at the drive end of resonator electrode 3011, excitation resonator vibration under the effect of electromagnetic force, and in other end pick-up, the resonance frequency of output resonator.Resonator for four beam tuning fork structures; Add pumping signal at drive end, because " U " shape of electrode design makes two groups of " H " beams receive reciprocal electromagnetic force; Thereby suppress the homophase horizontal vibration mode of resonator, thus make sensor stably resonance in anti-phase horizontal vibration mode.
With resonator 301 formula sensor chips is example, and the manufacture craft flow process of electric magnetization micromachine resonant pressure transducer of the present invention is described, like Fig. 5:
1) monocrystalline silicon piece is mixed, at the dense diffused layer of boron 101 of superficial growth; At diffuse si superficial growth insulation course (silica 1 02 and silicon nitride 103);
2) window is left at the photoetching back side, adopts the oxide layer and the nitration case at the reactive ion etching back side; Adopt reaction ion deep etching etching diffusion silicon layer;
3) adopt lift-off prepared front electrode.Leave electrode window through ray in positive photoetching; Splash-proofing sputtering metal film 105; Remove photoresist 104, obtain electrode;
4) window is left in the photoetching front, adopts the oxide layer and the nitration case at the reactive ion etching back side; Adopt reaction ion deep etching etching diffusion silicon layer;
5) adopt dense boron diffusion etch stop technology to discharge resonator, simultaneously the attenuate pressure sensitive film.
Two kinds of packaged types have been adopted in the encapsulation that the present invention is based on the electric magnetization resonance type pressure sensor of micro-electronic mechanical skill (MEMS): Can encapsulation and silicon lid Vacuum Package.
See Fig. 6 (a), the Can encapsulation step is:
See Fig. 6 (b), silicon lid Vacuum Package step is:
At first in vacuum chamber, become one silicon lid 18 and electric magnetization resonance type pressure sensor chip 11 bondings (or bonding) that the present invention is based on micro-electronic mechanical skill (MEMS), be sealed in resonator in the annular seal space 17; Magnet 12 and ceramic ring 13 are installed on the base that has bobbin 14 10, are adopted epoxy adhesive bonding; Chip 11 and silicon are installed on ceramic ring 13 are covered the integral body of 18 bondings, can adopt glass solder welding or thin tackifier bonding; Adopt the spun gold ball bond, with electrode and the bobbin 14 on the spun gold 15 connection chips 11; Cover the pipe cap 16 of no tail pipe, after employing store energy welding or epoxy adhesive seal, get product.Fig. 7 the present invention is based on the diagrammatic cross-section that bonding on the electric magnetization resonance type pressure sensor chip 11 of micro-electronic mechanical skill (MEMS) has silicon lid 18 among Fig. 6 (b).
Claims (7)
1. the electric magnetization resonance type pressure sensor based on micromechanics is characterized in that, comprises anchor point (2), resonator (3), pressure sensitive film (4) and framework (5), wherein:
Level is provided with pressure sensitive film (4) at framework (5) madial wall middle part; On a diagonal line of pressure sensitive film (4); Be positioned at pressure sensitive film (4) upper surface middle part and be provided with two anchor points (2), two anchor points (2) upper end is connected with many group resonators (3) with the cornerwise end points of corresponding framework (5) upper end;
The end to end straight line setting of many group resonators (3), be cross-placed on framework (5), anchor point (2), anchor point (2), framework (5) between, move towards to overlap with an above-mentioned diagonal line of pressure sensitive film (4);
The drive end of many group resonators (3) is electrically connected with driving circuit, another pick-up end, and the resonance frequency of output resonator is electrically connected with testing circuit.
2. pressure transducer according to claim 1 is characterized in that, said many group resonators (3) are three groups, and structure is identical, is two beams or four beam tuning fork structures, is H shape or two H parallel shape; Resonator (3) upper surface is with being provided with electrode, and electrode one end is that drive end is electrically connected with driving circuit, and the other end is the pick-up end, is electrically connected with testing circuit.
3. pressure transducer according to claim 2 is characterized in that: the resonator of said four beam tuning fork structures (3), and the electrode that its upper surface sets firmly takes the shape of the letter U, and two ends are positioned at the same side.
4. pressure transducer according to claim 1 is characterized in that: said anchor point (2), pressure sensitive film (4) material are monocrystalline silicon; Resonator (3) and framework (5) are the dense boron diffusion silicon (101) of tape insulation dielectric layer; Insulating medium layer is the double hyer insulation material that monox (102) and silicon nitride (103) are formed.
5. the method for packing of a pressure transducer according to claim 1 is characterized in that: be Can Vacuum Package method, comprise step:
A) go up bonding magnet (12) and ceramic ring (13) with epoxy adhesive at the base that has bobbin (14) (10);
B) weld or the bonding method of tackifier with glass solder at ceramic ring (13) upper surface, affixed with electric magnetization resonance type pressure sensor chip (11) lower surface;
C), the electrode on the chip (11) is connected with bobbin (14) with spun gold (15) with spun gold ball bond method;
D) cover the member on the base (10) with pipe cap (16), adopt store energy welding or epoxy adhesive the joint to be sealed affixed;
E) tail pipe from pipe cap (16) is evacuated pipe cap chamber (17), adopt the technology of colding pressing the sealing of pipe cap (16) tail pipe place, thereby whole sensor chip (11) just is sealed in the vacuum chamber (17), gets finished product.
6. the method for packing of a pressure transducer according to claim 1 is characterized in that: be silicon lid Vacuum Package method, comprise step:
A) go up bonding magnet (12) and ceramic ring (13) with epoxy adhesive at the base that has bobbin (14) (10);
B) weld or the bonding method of tackifier with glass solder at ceramic ring (13) upper surface, affixed with electric magnetization resonance type pressure sensor chip (11) lower surface;
C), the electrode on the chip (11) is connected with bobbin (14) with spun gold (15) with spun gold ball bond method;
D) cover on electric magnetization resonance type pressure sensor chip (11) with silicon lid (18); In vacuum chamber with bonding or adhesive bonding method; Silicon lid (18) lower periphery and framework (5) upper surface are fixed as one, be sealed in resonator (3) in the annular seal space (17) of silicon lid (18);
E) cover the pipe cap (16) of no tail pipe again in the top of silicon lid (18), pipe cap (16) covers the member on the base (10), and employing store energy welding or epoxy adhesive seal affixed to the joint, get product.
7. according to the method for packing of claim 5 or 6 described pressure transducers, it is characterized in that two kinds of method for packing have all adopted the thermal expansivity stupalith identical with single crystal silicon material to isolate thermal stress.
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| CN2010102514995A CN102374909A (en) | 2010-08-11 | 2010-08-11 | Micromachine-based electromagnetic excitation resonant pressure sensor |
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| CN2010102514995A CN102374909A (en) | 2010-08-11 | 2010-08-11 | Micromachine-based electromagnetic excitation resonant pressure sensor |
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102809450A (en) * | 2012-08-09 | 2012-12-05 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN103115719A (en) * | 2013-01-29 | 2013-05-22 | 中国科学院半导体研究所 | Resonance-type micro electromechanical system wing wind power sensor and manufacturing method thereof |
| CN103196593A (en) * | 2013-03-22 | 2013-07-10 | 中国科学院电子学研究所 | Resonance type micro-machinery pressure sensor and low-stress assembling method of resonance type micro-mechanical pressure sensor chip |
| CN103808961A (en) * | 2012-11-08 | 2014-05-21 | 中国科学院电子学研究所 | Cantilever part and resonant acceleration sensor using the same |
| CN103900753A (en) * | 2012-12-28 | 2014-07-02 | 中国科学院电子学研究所 | High-precision silicon micro-resonance type gas pressure sensor based on SOI technology |
| CN104568238A (en) * | 2014-12-08 | 2015-04-29 | 太原航空仪表有限公司 | Electromagnetic excitation resonant diaphragm pressure sensor |
| CN105136350A (en) * | 2015-05-15 | 2015-12-09 | 中北大学 | Near-field coupling wireless passive superhigh temperature pressure sensor and manufacturing method thereof |
| CN109752120A (en) * | 2019-01-21 | 2019-05-14 | 中国科学院电子学研究所 | Micro-resonator, exciting/pick-up circuit and the pressure sensor of pressure drag pick-up |
| CN109824007A (en) * | 2019-01-31 | 2019-05-31 | 清华大学 | A kind of on piece stress isolation structure and its design method for micro electro mechanical device |
| CN110793705A (en) * | 2019-09-21 | 2020-02-14 | 蚌埠市力业传感器有限公司 | Resonance pressure transmitter |
| CN111180436A (en) * | 2020-01-22 | 2020-05-19 | 北京新雷能科技股份有限公司 | Double-layer packaging structure of hybrid integrated circuit and manufacturing method thereof |
| CN111498792A (en) * | 2020-04-22 | 2020-08-07 | 西北工业大学 | Rigidity adjusting method of MEMS device |
| CN112484900A (en) * | 2020-12-12 | 2021-03-12 | 西安交通大学 | Quartz resonant pressure sensor with integrated push-pull structure |
| CN112816736A (en) * | 2020-12-31 | 2021-05-18 | 中国电子科技集团公司第十三研究所 | Stress isolation structure, micro-mechanical detection structure and MEMS inertia measurement device |
| CN112880887A (en) * | 2021-01-12 | 2021-06-01 | 北京航空航天大学 | Vacuum-packaged graphene resonant optical fiber pressure sensor and manufacturing method thereof |
| CN112875637A (en) * | 2021-04-07 | 2021-06-01 | 中国电子科技集团公司第四十九研究所 | High-temperature-resistant pressure sensor and manufacturing method thereof |
| CN114275730A (en) * | 2021-11-17 | 2022-04-05 | 电子科技大学 | Magnetic vibrator coupling resonance type micro-nano weighing device and preparation method thereof |
| CN114354024A (en) * | 2022-03-17 | 2022-04-15 | 成都凯天电子股份有限公司 | High-sensitivity modal coupling type silicon resonance pressure sensor and pressure calculation method thereof |
| CN115790913A (en) * | 2023-02-08 | 2023-03-14 | 成都凯天电子股份有限公司 | Silicon resonance pressure sensor with high dynamic measurement precision |
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| CN102809450B (en) * | 2012-08-09 | 2014-08-27 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN102809450A (en) * | 2012-08-09 | 2012-12-05 | 厦门大学 | Silicon micro resonant type pressure sensor and manufacturing method thereof |
| CN103808961B (en) * | 2012-11-08 | 2016-04-13 | 中国科学院电子学研究所 | Cantilever part and apply its resonant mode acceleration transducer |
| CN103808961A (en) * | 2012-11-08 | 2014-05-21 | 中国科学院电子学研究所 | Cantilever part and resonant acceleration sensor using the same |
| CN103900753B (en) * | 2012-12-28 | 2017-03-08 | 中国科学院电子学研究所 | A kind of high precision silicon micro-resonance type baroceptor based on SOI technology |
| CN103900753A (en) * | 2012-12-28 | 2014-07-02 | 中国科学院电子学研究所 | High-precision silicon micro-resonance type gas pressure sensor based on SOI technology |
| CN103115719A (en) * | 2013-01-29 | 2013-05-22 | 中国科学院半导体研究所 | Resonance-type micro electromechanical system wing wind power sensor and manufacturing method thereof |
| CN103196593A (en) * | 2013-03-22 | 2013-07-10 | 中国科学院电子学研究所 | Resonance type micro-machinery pressure sensor and low-stress assembling method of resonance type micro-mechanical pressure sensor chip |
| CN104568238A (en) * | 2014-12-08 | 2015-04-29 | 太原航空仪表有限公司 | Electromagnetic excitation resonant diaphragm pressure sensor |
| CN105136350A (en) * | 2015-05-15 | 2015-12-09 | 中北大学 | Near-field coupling wireless passive superhigh temperature pressure sensor and manufacturing method thereof |
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| CN109752120A (en) * | 2019-01-21 | 2019-05-14 | 中国科学院电子学研究所 | Micro-resonator, exciting/pick-up circuit and the pressure sensor of pressure drag pick-up |
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| CN110793705A (en) * | 2019-09-21 | 2020-02-14 | 蚌埠市力业传感器有限公司 | Resonance pressure transmitter |
| CN111180436A (en) * | 2020-01-22 | 2020-05-19 | 北京新雷能科技股份有限公司 | Double-layer packaging structure of hybrid integrated circuit and manufacturing method thereof |
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| CN112484900B (en) * | 2020-12-12 | 2021-12-28 | 西安交通大学 | Quartz resonant pressure sensor with integrated push-pull structure |
| CN112484900A (en) * | 2020-12-12 | 2021-03-12 | 西安交通大学 | Quartz resonant pressure sensor with integrated push-pull structure |
| CN112816736A (en) * | 2020-12-31 | 2021-05-18 | 中国电子科技集团公司第十三研究所 | Stress isolation structure, micro-mechanical detection structure and MEMS inertia measurement device |
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| CN112880887B (en) * | 2021-01-12 | 2021-10-26 | 北京航空航天大学 | Vacuum-packaged graphene resonant optical fiber pressure sensor and manufacturing method thereof |
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| CN114275730B (en) * | 2021-11-17 | 2023-09-26 | 电子科技大学 | Magnetic vibrator coupling resonance type micro-nano weighing device and preparation method thereof |
| CN114354024A (en) * | 2022-03-17 | 2022-04-15 | 成都凯天电子股份有限公司 | High-sensitivity modal coupling type silicon resonance pressure sensor and pressure calculation method thereof |
| CN115790913A (en) * | 2023-02-08 | 2023-03-14 | 成都凯天电子股份有限公司 | Silicon resonance pressure sensor with high dynamic measurement precision |
| CN115790913B (en) * | 2023-02-08 | 2023-06-13 | 成都凯天电子股份有限公司 | Silicon resonance pressure sensor with high dynamic measurement accuracy |
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Application publication date: 20120314 |