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CN102315347A - Light emitting diode epitaxial structure and manufacture method thereof - Google Patents

Light emitting diode epitaxial structure and manufacture method thereof Download PDF

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Publication number
CN102315347A
CN102315347A CN2010102175750A CN201010217575A CN102315347A CN 102315347 A CN102315347 A CN 102315347A CN 2010102175750 A CN2010102175750 A CN 2010102175750A CN 201010217575 A CN201010217575 A CN 201010217575A CN 102315347 A CN102315347 A CN 102315347A
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layer
light
emitting diode
epitaxial structure
diode epitaxial
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CN2010102175750A
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CN102315347B (en
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黄世晟
凃博闵
杨顺贵
黄嘉宏
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to CN201010217575.0A priority Critical patent/CN102315347B/en
Priority to US12/975,235 priority patent/US8501582B2/en
Publication of CN102315347A publication Critical patent/CN102315347A/en
Priority to US13/926,419 priority patent/US8629534B2/en
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Publication of CN102315347B publication Critical patent/CN102315347B/en
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

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Abstract

The invention relates to a light emitting diode epitaxial structure, which comprises a silicon substrate and a semiconductor structure layer, wherein a patterned dielectric layer and a block layer are formed on the silicon substrate, and a plurality of separated hole gaps are formed between the semiconductor structure layer and the substrate. The epitaxial structure has the advantages that because the separated hole gaps are formed between the semiconductor structure layer and the substrate, the residual stress can be effectively relieved because of thermal expansion coefficient differences between the semiconductor structure layer and the substrate, and the non-defective product rate of the epitaxial structure is ensured. The invention also provides a method for manufacturing the epitaxial structure.

Description

Light-emitting diode epitaxial structure and manufacturing approach thereof
Technical field
The present invention relates to a kind of epitaxial structure and manufacturing approach thereof, be meant a kind of epitaxial structure and manufacturing approach thereof of light-emitting diode especially.
Background technology
Light-emitting diode relies on its high light efficiency, low energy consumption, advantage such as pollution-free, has been applied among the increasing occasion, has much the trend that replaces conventional light source.
The chip of existing light-emitting diode is normally by a sapphire substrate and be grown in that group III nitride compound luminescent layer on the sapphire substrate constituted.Yet the chip of this kind structure causes integral heat sink not good because the sapphire thermal conductivity is relatively poor, influences the life-span of chip operation easily.It is to adopt the silicon substrate group III nitride compound ray structure of growing that the part light-emitting diode chip for backlight unit is also arranged at present, utilizes the high thermoconductivity of silicon substrate to promote the heat dispersion of chip.Yet the silicon substrate of this kind chip and the thermal expansion coefficient difference of group III nitride compound are bigger, cause group III nitride compound in when growth brilliant quality of heap of stone to take place easily and worsen and chap even and make wafer loss, influence the yields of chip.
Summary of the invention
The present invention aims to provide a kind of yields higher light-emitting diode epitaxial structure and manufacturing approach thereof.
A kind of light-emitting diode epitaxial structure comprises a silicon substrate, semiconductor structure layer, is formed with the dielectric layer and the barrier layer of a patterning on this silicon substrate, is formed with a plurality of holes that separate between this semiconductor structure layer and the substrate.
A kind of manufacturing approach of light-emitting diode epitaxial structure comprises:
One silicon substrate is provided;
On this silicon substrate, form an aluminum film layer;
On aluminum film layer, form a patterned light blockage layer;
Etching aluminum film layer and form the pattern identical with the photoresist layer pattern;
Remove photoresist layer;
Silicon substrate is placed under the oxygen containing environment, make its Al thin film layer and silicon be oxidized to aluminium oxide and silica;
On aluminium oxide, form a resilient coating;
Growth semiconductor ray structure layer on resilient coating, this semiconductor structure layer and silica separate and form a plurality of holes.
Compared with prior art; Light-emitting diode epitaxial structure of the present invention can directly be grown up on silicon substrate; Be to utilize the formation mechanism of aluminium oxide on silicon substrate, make the group iii nitride semiconductor structure sheaf can grow up on silicon substrate and reduce the phenomenon of embrittlement with prior art.Moreover, being formed with a plurality of holes between silicon substrate and the semiconductor structure layer, these holes can effectively be alleviated owing to thermal expansion coefficient difference causes the excessive problem of residual stress between substrate and the semiconductor structure layer, thereby guarantee that crystals growth of heap of stone is good.
With reference to the accompanying drawings, in conjunction with specific embodiment the present invention is done further description.
Description of drawings
Fig. 1 shows first step of making light-emitting diode epitaxial structure of the present invention.
Fig. 2 shows second step making light-emitting diode epitaxial structure of the present invention.
Fig. 3 shows the 3rd step making light-emitting diode epitaxial structure of the present invention.
Fig. 4 shows the 4th step making light-emitting diode epitaxial structure of the present invention.
Fig. 5 shows the 5th step making light-emitting diode epitaxial structure of the present invention.
Fig. 6 shows the light-emitting diode epitaxial structure of the first embodiment of the invention of making completion.
Fig. 7 shows the light-emitting diode epitaxial structure of the second embodiment of the invention of making completion.
The primary clustering symbol description
Substrate 100
Aluminum film layer 101
Dielectric layer 101a
Photoresist layer 102
Barrier layer 103
Semiconductor structure layer 104
Groove 105
Hole 106、106a
Embodiment
See also Fig. 6, show the epitaxial structure of the light-emitting diode of the first embodiment of the present invention.This epitaxial structure comprises a substrate 100, alternately be distributed in substrate 100 lip-deep dielectric layer 101a and a barrier layer 103 and grows in the semiconductor structure layer 104 on the dielectric layer 101a.This substrate 100 is processed by silicon (Si), to promote whole heat dispersion.This dielectric layer 101a is by aluminium nitride (AlN) or aluminium oxide (Al 2O 3) wait metal oxide materials to process, preferably, adopt aluminium oxide or aluminium nitride formation material in this enforcement as dielectric layer 101a.The material of this barrier layer 103 is silica (SiO 2) or silicon nitride (Si 3N 4).In the present embodiment, this dielectric layer 101a is discontinuously arranged in substrate 100 surfaces, and it is used to semiconductor structure layer 104 provides growth required substrate.Dielectric layer 101a is owing to discontinuously arranged a plurality of independently island district and a plurality of grooves 105 between these island districts of forming.Barrier layer 103 is distributed in the groove 105 that dielectric layer 101a breaks off and alternately is distributed in substrate 100 surfaces with dielectric layer 101a.The thickness of this barrier layer 103 is much smaller than the thickness of dielectric layer 101a, and preferably, the thickness of barrier layer 103 is equivalent to 1/5 of dielectric layer 101a thickness.Because silica or silicon nitride are polymorph, semiconductor structure layer 104 is difficult in its superficial growth, therefore utilizes the mode of laterally growing up, and by this semiconductor structure layer 104 of slowly growing on the dielectric layer 101a, covers this barrier layer 103 at last.This barrier layer 103 can intercept the growth of semiconductor structure layer 104, above substrate 100, to form the hole 106 at a plurality of intervals.The top of each hole 106 is the taper of convergent and is deep into semiconductor structure layer 104 inside.This semiconductor structure layer 104 comprises that the resilient coating and that grows on the dielectric layer 101a grows in the semiconductor light emitting structure layer on the resilient coating.This semiconductor light emitting structure layer is for comprising the group III nitride compound of gallium nitride (GaN), and it comprises a P type first bond course, a N type second bond course and the active layers between this first bond course and second bond course.This active layers can be in homostyructure (homostructure), heterostructure (heterostructure), double-heterostructure (double-heterostructure), quantum well structure (Quantum well structure) and the multiple quantum trap (Muti-Quantum well structure) a kind of.This active layers can be excited by electric current and produce photon and outwards give off the light of specific wavelength.
Because formed a plurality of holes 106 between semiconductor structure layer 104 and the substrate 100, the residual stress that occurs owing to thermal expansion coefficient difference between the two can be cushioned by these holes 106, thereby guarantees that epitaxial layer can grow on the substrate 100 well.
In addition; Because the bottom of semiconductor light emitting structure layer has a plurality of holes 106; The air refraction coefficient that is comprised in this hole 106 is less than the refraction coefficient of III-family nitrogen compound semiconductor; The light that active layers is sent towards substrate 100 is because of the reflection that makes progress of refraction coefficient difference, thereby promotes whole light extraction efficiency.
Be appreciated that ground, but also continuous distribution is in substrate 100 surfaces for this dielectric layer 101a, each groove 105 only is perforate and the thorough dielectric layer 101a of space between adjacent not that is opened on the dielectric layer 101a.
See also Fig. 1-6, the present invention also provides a kind of method of making above-mentioned epitaxial structure, and it comprises the steps:
1) silicon substrate 100 at first is provided;
2) on silicon substrate 100, form an aluminum film layer 101;
3) on aluminum film layer 101, form a patterned light blockage layer 102;
4) this aluminum film layer 101 of etching and forming and the identical pattern of photoresist layer 102 patterns;
5) remove photoresist layer 102;
6) silicon substrate 100 is placed under the condition of high-temperature oxygen-enriched or rich nitrogen, makes its surperficial silicon be oxidized to silica or be that silicon nitride forms barrier layer 103 by nitrogenize, aluminium is oxidized to aluminium oxide or is that aluminium nitride forms dielectric layer 101a by nitrogenize;
7) at aluminium oxide or the aln surface resilient coating of growing;
8) growth semiconductor luminescent layer on resilient coating.
In step 3), the pattern of photoresist layer 102 can design according to particular demands, is a plurality of evenly spaced each other island areas in the present embodiment.This photoresist layer 102 can be G-line eurymeric photoresist layer, I-line eurymeric photoresist layer, H-line eurymeric photoresist layer or DUV eurymeric photoresist layer.Be appreciated that ground, photoresist layer 102 can also be the photoresistance of the other types that adapt with light shield design and relevant processing procedure.This pattern can be the continuity pattern, and for example circular, polygon or discontinuous pattern be strip for example.
In step 5); The mode that can adopt exposure earlier to develop again removes photoresist layer 102; Particularly; Employed light source can be the ultraviolet light of wavelength between 200nm-400nm in exposure process, and employed developer solution can or include NaOH (NaOH) or the inorganic alkaline solution of potassium hydroxide (KOH) for the organic basic solution that includes TMAH (TMAH) in developing process.
In step 6), reaction temperature was regulated according to the thickness and the reaction time of aluminum film layer 101, was preferably more than 1000 degrees centigrade in the present embodiment.
Above-mentioned aluminum film layer 101 can pass through hot vapour deposition method (Thermal Evaporation; TE), electron beam evaporation plating method (E-beam Evaporation; EBE), ion beam sputtering deposition method (Ion beam Sputter; IBS), chemical vapour deposition technique (CVD), physical vaporous deposition (PVD) and galvanoplastic are formed on the substrate 100.Above-mentioned semiconductor light emitting layer 104 can pass through Metalorganic chemical vapor deposition method (MOCVD), molecular beam epitaxy method (Molecular Beam Epitaxy; MBE) or halide chemical gaseous phase brilliant method (Hydride Vapor Phase Epitaxy of heap of stone; HVPE) grow on the resilient coating.
In the present embodiment, the position of close together does not have growing semiconductor structure layer 104 and forms hole 106 directly over barrier layer 103, and in distance position far away owing to the semiconductor light emitting layer cross growth is connected to an integral body.Please consult Fig. 7 in the lump; Be appreciated that ground, through the width and the ratio of the thickness of semiconductor structure layer 104 of controlling each groove 105 semiconductor structure layer 104 position far away directly over barrier layer 103 also can't be connected and form a plurality of independently island epitaxial layers.Preferably, the width of groove 105 should be greater than the double thickness of semiconductor structure layer 104, to guarantee complete independence between each epitaxial layer.Since independently of one another between these island epitaxial layers, the stress that produces owing to thermal expansion coefficient difference can more effectively be reduced.And, these independently epitaxial layer can directly be made as light-emitting diode chip for backlight unit.

Claims (16)

1. a light-emitting diode epitaxial structure comprises a silicon substrate and semiconductor structure layer, it is characterized in that: be formed with the dielectric layer and the barrier layer of a patterning on this silicon substrate, be formed with a plurality of holes that separate between semiconductor structure layer and the substrate.
2. light-emitting diode epitaxial structure as claimed in claim 1 is characterized in that: this semiconductor structure layer comprises resilient coating and semiconductor light emitting structure layer.
3. light-emitting diode epitaxial structure as claimed in claim 1 is characterized in that: this dielectric layer offers a plurality of grooves, and barrier layer is positioned at these grooves, and the hole of said separation is positioned at the barrier layer top.
4. light-emitting diode epitaxial structure as claimed in claim 3 is characterized in that: the dielectric layer continuous distribution is in substrate surface.
5. light-emitting diode epitaxial structure as claimed in claim 3 is characterized in that: dielectric layer is discontinuously arranged in substrate surface.
6. light-emitting diode epitaxial structure as claimed in claim 3 is characterized in that: semiconductor light emitting layer is formed a plurality of independently island structures by the hole perforation.
7. light-emitting diode epitaxial structure as claimed in claim 3 is characterized in that: the width of at least one groove is greater than the twice of semiconductor structure layer thickness.
8. light-emitting diode epitaxial structure as claimed in claim 1 is characterized in that: dielectric layer comprises a kind of aluminium oxide or aluminium nitride material.
9. light-emitting diode epitaxial structure as claimed in claim 1 is characterized in that: barrier layer comprises a kind of silica or silicon nitride material.
10. method of making the light-emitting diode epitaxial structure comprises:
One silicon substrate is provided;
On this silicon substrate, form an aluminum film layer;
On aluminum film layer, form a patterned light blockage layer;
Etching aluminum film layer and form the pattern identical with the photoresist layer pattern;
Remove photoresist layer;
Silicon substrate placed contain under oxygen or the nitrogenous environment, make its Al thin film layer and silicon is oxidized or nitrogenize, wherein aluminum film layer is oxidized to aluminium oxide or is aluminium nitride by nitrogenize, and silicon is oxidized to silica or is silicon nitride by nitrogenize;
On aluminium oxide or aluminium nitride, form a resilient coating,
Growth semiconductor ray structure layer on resilient coating, this semiconductor light emitting layer and silica or silicon nitride separate and form a plurality of holes.
11. the method for manufacturing light-emitting diode epitaxial structure as claimed in claim 10 is characterized in that: the semiconductor light emitting structure layer is connected to an integral body above hole.
12. the method for manufacturing light-emitting diode epitaxial structure as claimed in claim 10 is characterized in that: the semiconductor light emitting structure layer is formed a plurality of independently island structures by the hole perforation.
13. the method for manufacturing light-emitting diode epitaxial structure as claimed in claim 10 is characterized in that: offer a plurality of grooves on aluminium oxide or the aluminium nitride, silica or silicon nitride are positioned at these grooves, and hole is positioned at silica or silicon nitride top.
14. the method for manufacturing light-emitting diode epitaxial structure as claimed in claim 13 is characterized in that: aluminium oxide or aluminium nitride continuous distribution are in the silicon substrate surface.
15. the method for manufacturing light-emitting diode epitaxial structure as claimed in claim 13 is characterized in that: aluminium oxide or aluminium nitride are discontinuously arranged in the silicon substrate surface.
16. the method for manufacturing light-emitting diode epitaxial structure as claimed in claim 15 is characterized in that: the width of at least one groove is greater than the twice of semiconductor light emitting structure layer thickness.
CN201010217575.0A 2010-07-05 2010-07-05 Light emitting diode epitaxial structure and manufacture method thereof Expired - Fee Related CN102315347B (en)

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US12/975,235 US8501582B2 (en) 2010-07-05 2010-12-21 Semiconductor structure having low thermal stress and method for manufacturing thereof
US13/926,419 US8629534B2 (en) 2010-07-05 2013-06-25 Semiconductor structure having low thermal stress

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CN103682016A (en) * 2012-08-30 2014-03-26 上海华虹宏力半导体制造有限公司 Manufacturing method for GaN epitaxy or substrate
CN109103070A (en) * 2018-07-20 2018-12-28 北京大学 Method based on nano graph silicon substrate preparation high quality thick film AlN
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