CN102290342B - Laser scanning annealing method adopting hexagonal beam spot - Google Patents
Laser scanning annealing method adopting hexagonal beam spot Download PDFInfo
- Publication number
- CN102290342B CN102290342B CN 201110259211 CN201110259211A CN102290342B CN 102290342 B CN102290342 B CN 102290342B CN 201110259211 CN201110259211 CN 201110259211 CN 201110259211 A CN201110259211 A CN 201110259211A CN 102290342 B CN102290342 B CN 102290342B
- Authority
- CN
- China
- Prior art keywords
- hexagon
- baffle plate
- laser
- spot
- beam spot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000137 annealing Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 15
- 230000007246 mechanism Effects 0.000 claims abstract description 11
- 238000005224 laser annealing Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000002474 experimental method Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Images
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
The invention discloses a laser scanning annealing method adopting a hexagonal beam spot, belonging to the semiconductor manufacturing technology. The hexagonal beam spot is formed by four baffle mechanisms capable of moving independently, each two of baffle mechanisms are arranged in an opposite way in an optical path, and an upper baffle and a lower baffle move independently or synchronously; and a left baffle and a right baffle move independently or synchronously, the four baffles all adopt rectangular baffles, the opposite sides of the upper baffle and the lower baffle or the left baffle and the right baffle are respectively provided with a V-shaped opening to form vertex angles A of a hexagon, and the vertexes of the vertex angles A are arranged on a central line. During wafer scanning annealing through the hexagonal beam spot, two adjacent scanning lines are overlapped for compensation, the problems of excessive or insufficient scanning between lines in the traditional line-by-line scanning can be solved, and the difficulty in implementation and the cost of implementation of the whole system cannot be increased.
Description
Technical field
The invention belongs to the semiconductor fabrication scope, particularly a kind of hexagon pencil of forms spot that adopts carries out the method that laser is swept annealing.
Background technology
In the evolution of ic manufacturing technology, along with device size constantly dwindles, at 45nm, technology nodes such as 32nm, and even during smaller szie, how to form the super shallow junction (Ultra-Shallow Junction) of a performance transistor having excellent source-drain area, become a vital technical challenge.In order to satisfy 12 " wafer 45nm nanometer and following each for the demand that device is made super shallow PN junction, traditional requirement that can not adapt to super shallow junction with bar shaped or globe lamp as the light rapid thermal annealing (RTA) of light source.And a large amount of studies show that, in the nano-scale CMOS device, becoming a partner of super shallow and low-resistivity suppresses short-channel effect and obtains the important effect of better device performance play more and more.Because the restriction of thermal diffusion and solid solubility, traditional light rapid thermal annealing (RTA) is even adopt the spike annealing technology also to be difficult to satisfy the requirement of 65nm node.
Under this kind background, people propose to adopt the method for laser pulse annealing (Laser Spike Annealing), obtain zero diffusion of annealing stage implanted dopant particle, surface carrier concentration and super shallow, the precipitous PN junction of super solid solubility.
Because the restriction of the beam spot size of laser annealing, if whole wafer is annealed, just must make to form relative motion between laser beam and the wafer, along with the passing in processing time, laser beam spot will move and cover completely whole wafer surface like this.Further, for the laser annealing that line scanning moves of going forward side by side of any employing pulse laser, require between two continuous sewwp beam spots, to be included between the scan line, do not have any slit.If be that above-mentioned situation has taken place, then can there be the place that laser is not applied to fully in wafer surface, and in the modern integrated circuits technology, on very little wafer surface is long-pending, can integrally produce a lot of transistor devices, therefore even very a little bit smaller area has been missed the laser annealing effect, also can cause the device of a plurality of device performances at this area place and other normarzing annealings inconsistent, just cause the laser annealing technique inefficacy.Another problem that should be noted that is, for two continuous sweep bundle spots, comprises two adjacent scan lines, and its lap also will carry out strict control.If not so, more overlapping such as having between the two adjacent scan lines, a certain scan line marginal portion then, be equivalent to repeatedly carried out twice laser annealing, and the scan line core, just carried out one time, this has also caused the inhomogeneous of annealing effect, therefore also can influence technological effect.
In order to address the above problem, particularly to restraint spot in the ranks overlapping in control, and a kind of method is to make the light intensity of laser beam edge descend in certain yardstick internal linear, for example on 100 microns length, makes light intensity be down to 0 linearly from peak.Like this, during the two row laser scannings of joining before and after carry out, can make 100 microns of previous row and back delegation overlaids, because gross energy is two secondary action sums, the any place of gross energy in two scan line scopes that the front and back two laser is applied on the wafer all is identical, thereby can obtain identical annealing effect.Even if because the Machinery Control System precision of sheet platform or laser beam flying is not enough, for example the two laser overlapping areas has only 90 microns, the total deposition laser energy that causes so thus, between the zones of different on the wafer, also just maximum differs 5%, with respect to not controlling fully, it is the acceptable process deviation.
Such scheme has proposed higher requirement for the light path system of beam shaping and beam edge processing, and particularly at the used deep ultraviolet laser wave band of super shallow junction annealing, the specific implementation difficulty of optical system is just bigger.In order to solve the problem of the overlapping control of laser beam spot, again not to the too high requirement of optical system proposition of sheet platform or laser beam treatment, the present invention proposes, and adopts the shaping scheme of special laser beam bundle shape of spot simultaneously, introduce hexagonal bundle spot, realize that the light intensity linearisation drops to 0 purpose.Adopt the present invention program, not only simple and easy to do, also can be in the sheet that improves laser annealing the inhomogeneity while, reduce the realization cost of laser annealing machine system significantly.
Summary of the invention
The objective of the invention is to carry mechanism for a kind of method that adopts the hexagon laser beam spot to carry out laser scanning annealing, it is characterized in that, described hexagonal laser beam spot, by in light path in twos four can be independently movable baffle mechanisms staggered relatively realize that namely overhead gage 1 and lower baffle plate 2 be independent or synchronously move; Right baffle-plate 3 and right baffle plate 4 are independent or synchronously mobile, and four are the rectangle baffle plate, and wherein a V-arrangement opening is opened on the relative one side of overhead gage 1 and lower baffle plate 2 or right baffle-plate 3 and right baffle plate 4 separately, forms hexagonal drift angle A, and top A angular vertex is on center line; Thereby through the laser beam that expands and spare bundle by behind the baffle mechanism, restraint spot and be hexagon ABBAB1B1; And the inner light intensity of hexagon is uniform.
Adopt hexagonal bundle spot to carry out laser annealing scanning, on the horizontal direction, can adopt the light beam of high Duplication to move according to the actual needs; And in the vertical direction, the overlapping gable that will control in the bundle hexagonal drift angle A of spot and the formation of BB1 line between two scan lines.
The gable that the hexagonal drift angle A of described bundle spot and BB1 line form, because light intensity is even, the laser energy that deposits on the wafer will be directly proportional with bundle spot area, and be to drop to 0 linearly; At this moment, when hexagon pencil of forms spot scanned annealing to wafer, two bundle spot energy of two scan lines were superimposed, make the total laser energy that deposits on the wafer equate; Best lap between row and the row is determined by technological experiment.
The invention has the beneficial effects as follows, in view of laser beam through expanding and sparing after the optical treatment such as bundle, light beam bundle spot generally is rounded or rectangle, and the laser beam spot shaping is become hexagonal shape, can keep the utilization ratio to original laser beam.If if not so, establish the falling than the crested of large tracts of land part of original bunch spot, then the utilance of laser will be not high.Keeping the laser utilization ratio simultaneously, by the control of halved tie spot physical dimension, rather than to light distribution control, realized that the energy of bundle spot drift angle and bottom corner portion is changed to 0 effect linearly from maximum.The present invention implements simple and effective more, can improve the full wafer uniformity of laser annealing technique, reduces the realization difficulty of sweep mechanism and laser beam treatment system and realizes cost.
Description of drawings:
Fig. 1 is for forming four baffle mechanism schematic diagrames of hexagon pencil of forms spot.
Fig. 2 is the shape schematic diagram of hexagon pencil of forms spot.
When Fig. 3 lines by line scan for adopting hexagon pencil of forms spot, the schematic diagram of scan line stack situation.
Among the figure: 1-overhead gage, 2-lower baffle plate, 3-right baffle-plate, the right baffle plate of 4-, the hexagonal drift angle A of A-; The summit that B-overhead gage and lower baffle plate and right baffle-plate overlap to form, the summit that B1-overhead gage and lower baffle plate and right baffle plate form.
Embodiment:
The invention provides a kind of method that adopts the hexagon laser beam spot to carry out laser scanning annealing.Illustrated below in conjunction with accompanying drawing.
Figure 1 shows that the four baffle mechanism schematic diagrames that form hexagon pencil of forms spot.Among the figure, described hexagonal laser beam spot, under simple case, by in light path in twos four can be independently movable light path blocking plate staggered relatively realize that namely baffle plate 1 and baffle plate 2 be independent or synchronously move; Baffle plate 3 and baffle plate 4 are independent or synchronously mobile, and four are the rectangle baffle plate, and wherein a V-arrangement opening is opened on the relative one side of overhead gage 1 and lower baffle plate 2 or right baffle-plate 3 and right baffle plate 4 separately, forms hexagonal drift angle A, and top A angular vertex is on center line; Thereby through the laser beam that expands and spare bundle by behind the baffle mechanism, restraint spot and be hexagon ABBAB1B1; Can make the bundle spot reach certain area, and the light intensity in the bundle spot scope is even.
The wavelength of annealing lasing light emitter, power etc. are decided on technological requirement, for example adopt 308nm XeCl laser, power 50W～200W.In the laser beam part with a tight waist that expands and spare bundle, perhaps position such as optical system focal plane, but insert the light path blocking plate of four self-movements, play the effect of the edge of a knife, thereby lasing aperture is treated as hexagon ABBAB1B1 shape.As shown in Figure 2, each in four light path blocking plate all can be by motor-driven, and is mobile in upper and lower and left and right direction respectively, thereby can change the area of hexagon pencil of forms spot.Here requirement, four hexagon ABBAB1B1 shapes that plate washer surrounds always are among the light beam.For resulting hexagon pencil of forms spot, the height of the triangle dash area that its hexagonal drift angle A and BB1 line form, for example, extremely several millimeters of tens of microns.
After obtaining the hexagon pencil of forms, make such laser do the motion of scanning in wafer surface, wherein last scan line and back one scan row have certain overlappingly, as shown in Figure 3, realize the annealing of hexagon pencil of forms spot scan mode.
Overlap each other about scan line, concrete method is, the triangle dash area overlaid of the triangle dash area of one scan row bundle spot and next scan line bundle spot in the order, as shown in Figure 3.When specifically moving laser annealing, consider Light Diffraction Effect, perhaps the effect of two secondary actions and direct action can not be in full accord under the same sedimentary energy, need increase some laps again on above-mentioned lap basis.Best lap, relevant with concrete technology, can carry out engineer testing under institute's certain conditions and determine concrete the application.
Claims (3)
1. one kind is adopted the hexagon laser beam spot to carry out the method that laser scanning is annealed, it is characterized in that, described hexagonal laser beam spot, by in light path in twos four can be independently movable baffle mechanisms staggered relatively realize that namely overhead gage (1) and lower baffle plate (2) they be independence or synchronously move; Right baffle-plate (3) and right baffle plate (4) are independent or synchronously mobile, four are the rectangle baffle plate, wherein overhead gage (1) and lower baffle plate (2) or right baffle-plate (3) and the relative one side of right baffle plate (4), open a V-arrangement opening separately, form hexagonal drift angle (A), drift angle (A) summit is on center line; Thereby through the laser beam that expands and spare bundle by behind the baffle mechanism, restraint spot and be hexagon (ABBAB1B1); And the inner light intensity of hexagon is uniform.
2. carry out the method for laser scanning annealing according to the described employing hexagon of claim 1 laser beam spot, it is characterized in that, adopt the hexagon laser beam spot to carry out laser annealing scanning, on the horizontal direction, can adopt the light beam of high Duplication to move according to the actual needs; And in the vertical direction, overlapping will control at the drift angle (A) of hexagon laser beam spot and the gable of BB1 line formation between two scan lines, wherein A is hexagonal drift angle; B is the summit that overhead gage and lower baffle plate and right baffle-plate overlap to form, and B1 is the summit that overhead gage and lower baffle plate and right baffle plate form.
3. carry out the method for laser scanning annealing according to the described employing hexagon of claim 1 laser beam spot, it is characterized in that, the gable that the drift angle of described hexagon laser beam spot (A) and BB1 line form, wherein A is hexagonal drift angle; B is the summit that overhead gage and lower baffle plate and right baffle-plate overlap to form, and B1 is the summit that overhead gage and lower baffle plate and right baffle plate form; Because light intensity is even, the laser energy that deposits on the wafer will be directly proportional with bundle spot area, and be to drop to 0 linearly; At this moment, when hexagon pencil of forms spot scanned annealing to wafer, two bundle spot energy of two scan lines were superimposed, make the total laser energy that deposits on the wafer equate; Best lap between row and the row is determined by technological experiment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110259211 CN102290342B (en) | 2011-09-05 | 2011-09-05 | Laser scanning annealing method adopting hexagonal beam spot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110259211 CN102290342B (en) | 2011-09-05 | 2011-09-05 | Laser scanning annealing method adopting hexagonal beam spot |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102290342A CN102290342A (en) | 2011-12-21 |
| CN102290342B true CN102290342B (en) | 2013-07-03 |
Family
ID=45336643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110259211 Expired - Fee Related CN102290342B (en) | 2011-09-05 | 2011-09-05 | Laser scanning annealing method adopting hexagonal beam spot |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102290342B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103871854A (en) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | Laser annealing equipment |
| KR102463885B1 (en) * | 2015-10-21 | 2022-11-07 | 삼성디스플레이 주식회사 | Laser annealing apparatus and method for manufacturing display apparatus using the same |
| US11378657B2 (en) * | 2017-08-08 | 2022-07-05 | Datalogic IP Tech, S.r.l. | Time of flight sensor with light baffle system and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1649081A (en) * | 2004-01-30 | 2005-08-03 | 株式会社日立显示器 | Laser annealing apparatus and annealing method |
| CN101288156A (en) * | 2005-08-16 | 2008-10-15 | 纽约市哥伦比亚大学理事会 | System and method for uniform sequential lateral solidification of thin films using high frequency laser |
| CN102157343A (en) * | 2010-11-25 | 2011-08-17 | 清华大学 | Laser annealing device and method using trapezoidal beam spot for scanning |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4498716B2 (en) * | 2002-10-03 | 2010-07-07 | 株式会社半導体エネルギー研究所 | Laser irradiation apparatus and semiconductor device manufacturing method using the laser irradiation apparatus |
| JP2006237042A (en) * | 2005-02-22 | 2006-09-07 | Seiko Epson Corp | Laser annealing apparatus, method of manufacturing semiconductor thin-film employing the same, and thin-film transistor |
-
2011
- 2011-09-05 CN CN 201110259211 patent/CN102290342B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1649081A (en) * | 2004-01-30 | 2005-08-03 | 株式会社日立显示器 | Laser annealing apparatus and annealing method |
| CN101288156A (en) * | 2005-08-16 | 2008-10-15 | 纽约市哥伦比亚大学理事会 | System and method for uniform sequential lateral solidification of thin films using high frequency laser |
| CN102157343A (en) * | 2010-11-25 | 2011-08-17 | 清华大学 | Laser annealing device and method using trapezoidal beam spot for scanning |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2004-146823A 2004.05.20 |
| JP特开2006-237042A 2006.09.07 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102290342A (en) | 2011-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102233485B (en) | Destination object processing method and destination object treating apparatus | |
| CN102290342B (en) | Laser scanning annealing method adopting hexagonal beam spot | |
| CN105209954B (en) | Laser irradiation device | |
| TWI570745B (en) | Grid for plasma ion implant | |
| CN107204271A (en) | Ion injection method and ion implantation apparatus | |
| JP2013502077A5 (en) | ||
| CN102157343B (en) | Laser annealing method using trapezoidal beam spot for scanning | |
| CN106068566A (en) | The ion embedding technology of narrow semiconductor structure | |
| CN106920741A (en) | Ion injection method and ion implantation apparatus | |
| US20220359204A1 (en) | System, Semiconductor Device and Method | |
| ES2737977T3 (en) | Photovoltaic converter with improved emitter structure based on silicon components and a method for the production of the photovoltaic converter | |
| CN102844144A (en) | Method and apparatus for irradiating semiconductor material surface by laser energy | |
| CN101467228B (en) | Ion beam irradiating apparatus, and method of producing semiconductor device | |
| CN102315108A (en) | Laser annealing method used for complex structure semiconductor device | |
| TWI541861B (en) | Crystallization method of amorphous silicon layer | |
| CN109643644A (en) | The equipment annealed for the layer to semiconductor material, the method annealed to the layer of semiconductor material and flat-panel monitor | |
| CN107430990A (en) | Thin film transistor base plate, display panel and laser anneal method | |
| CN103117211A (en) | Method for improving surface resistance uniformity of wafer after laser annealing | |
| US10840095B2 (en) | Laser irradiation device, thin-film transistor and thin-film transistor manufacturing method | |
| TWI660393B (en) | Mask set for implanting a surface of a workpiece and method of processing a workpiece | |
| JP2014022347A (en) | Ion injection method and ion injection device | |
| KR20160001697A (en) | Method for ion implantation | |
| CN112435921A (en) | Laser annealing method and laser annealing system of power device | |
| TWI567795B (en) | Methods for doping finfets | |
| US9818574B2 (en) | Beam transmission system and method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130703 Termination date: 20170905 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |