CN102284792B - Device for scraping and cutting on semiconductor device chip glass passive film and using method thereof - Google Patents
Device for scraping and cutting on semiconductor device chip glass passive film and using method thereof Download PDFInfo
- Publication number
- CN102284792B CN102284792B CN2011102104162A CN201110210416A CN102284792B CN 102284792 B CN102284792 B CN 102284792B CN 2011102104162 A CN2011102104162 A CN 2011102104162A CN 201110210416 A CN201110210416 A CN 201110210416A CN 102284792 B CN102284792 B CN 102284792B
- Authority
- CN
- China
- Prior art keywords
- cutting
- laser beam
- chip
- silicon chip
- guarantee
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000011521 glass Substances 0.000 title claims abstract description 9
- 238000007790 scraping Methods 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- 239000010703 silicon Substances 0.000 claims abstract description 72
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 230000002277 temperature effect Effects 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 10
- 238000003556 assay Methods 0.000 claims description 6
- 230000002950 deficient Effects 0.000 claims description 6
- 238000007689 inspection Methods 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 6
- 238000007664 blowing Methods 0.000 abstract description 9
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 3
- 229910001651 emery Inorganic materials 0.000 description 8
- 239000000428 dust Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Images
Landscapes
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
The invention discloses a device for scraping and cutting on a semiconductor device chip glass passive film. The device is characterized by comprising a laser, a light path transmission channel, a beam-expanding device, a deflection device, an optical focusing device, an air blowing and exhausting device, a glass passive film and an operating platform, wherein the laser is connected with the light path transmission channel; the optical focusing device is arranged on two sides of a purple light laser beam; and the air blowing and exhausting device is arranged on one side of the purple light laser beam. The invention also discloses a using method of the scraping and cutting device. The using method comprises the following steps of: adjusting the temperature value of a crystal; adjusting a horizontal polarizer of the light path transmission channel; adjusting and fixing the position of the beam-expanding device; adjusting the deflection device; arranging and adjusting the optical focusing device; adjusting and testing the horizontal angle of the operating platform; adjusting the working Q frequency and electric frequency pulse width of the laser; selecting proper current and scraping and cutting speed; and inspecting products. The device and the using method thereof have the advantages of high scraping and cutting speed, low consumption cost, low maintenance cost, high productivity and high silicon wafer area utilization ratio.
Description
Technical field
The present invention relates to a kind of on semiconductor device chip glassivation film the using method of the device of cutting-up.
Background technology
In semiconductor device chip cutting-up technique, generally adopt at present on the silicon materials between chip and chip in the cutting-up zone method with emery wheel blade cutting-up: the silicon chip that will treat cutting-up is attached on blue film, the emery wheel blade that utilizes High Rotation Speed silicon chip by vertically, horizontal both direction cutting-up, then blue film being stretched tight to open makes between semiconductor device chip disconnected from each otherly, is convenient to the encapsulation of follow-up finished product.
The method of emery wheel scribing has the following disadvantages:
1. the emery wheel scribing belongs to contact cutting-up method, and silicon chip easily is subjected to mechanical stamping power in the cutting-up process, and silicon chip easily is out of shape, is shifted, and causes semiconductor chip to scrap because edge fragmentation and cut deflection cause.
2. emery wheel blade speed when cutting-up semiconductor device chip glassivation film very slow (generally≤about 8mm/s), production efficiency is extremely low, have than multiple cracks, device chip surface after cutting-up and contain and adhere to dust, has a strong impact on product performance.
3. the emery wheel scribing needs more consumption-type auxiliary material, as: a large amount of deionized water, emery wheel blades, repair blade, aid etc., required maintenance cost, human cost are higher.
Summary of the invention
The objective of the invention is:, for above-mentioned deficiency, be provided on semiconductor device chip glassivation film Dicing speed fast, consuming cost is low, the slitting device that maintenance cost is low, production capacity is high, the silicon area utilization rate is high.
Another object of the present invention is: the using method that above-mentioned slitting device is provided.
For achieving the above object, the technical solution used in the present invention is:
the device of cutting-up on semiconductor device chip glassivation film, comprise the laser instrument that can produce the purple light laser beam, optic path passage for purple light laser beam optic path, the parallel beam expand device that the purple light laser beam is dispersed, change the arrangement for deflecting of purple light laser beam parallel direction, the optical focusing device that purple light laser beam after dispersing is focused on, the air blowing exhaust apparatus that the dust that produces in the cutting-up process is blown, the glassivation film on protection semiconductor device chip surface and the operating platform of placing semiconductor device chip, described laser instrument is connected with the optic path passage, described parallel beam expand device and arrangement for deflecting are placed on the optic path passage, described optical focusing device is located at the both sides of purple light laser beam, described air blowing exhaust apparatus is located at a side of purple light laser beam.
The using method of slitting device, comprise the steps: on semiconductor device chip glassivation film
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and with power checker, measure performance number, find the crystal temperature effect value that is fit to the crystal normal operation to be 24-26 ℃, guarantee that simultaneously the humiture of working environment is stable, guarantee the normal steady operation of laser instrument;
The horizontal polariscope of b, adjusting optic path passage, guarantee that the purple light laser beam is level from laser instrument launch hole to parallel beam expand device porch;
C, adjusting and fixing parallel beam expand device position, guarantee that the purple light laser beam passes through along the central axis of parallel beam expand device;
D, regulate arrangement for deflecting, make itself and operating platform horizontal plane angle at 45 °, guarantee the purple light laser beam after arrangement for deflecting vertically downward;
E, installation are also regulated optical focusing device, guarantee the central axis process of purple light laser beam along optical focusing device, and laser beam angular deflection and laser beam diffraction do not occur;
F, regulate and the level angle of test operation platform, guarantee laser beam after optical focusing device vertical irradiation in operating platform;
G, control purple light laser beam wavelength are 355nm, regulate in 20-70KHZ scope laser works Q frequently, regulate the laser instrument low-level pulse width 1-10 μ S scopes in, the adjusting parallel beam expand device is dispersed multiple in 6-12 times of scopes, regulate focusing arrangement to meet the cutting-up needs of different cutting-up objects, guarantee that laser beam foucing is between the up and down 50 μ m of glassivation film surface;
H, the different qualities according to the glassivation film, the different-thickness of semiconductor device chip, cutting-up line width, sliver complexity, selecting the electric current of suitable size, selecting suitable Dicing speed in the 30-100mm/S scope, selecting suitable laser power between 30%-90% between 20-35A;
After i, laser system adjustment or the product that reply marks while changing wafer batch implement first inspection, surface condition with high-power microscope check cut, cut presents straight, the cut both sides are qualified without glass crack, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100 μ of silicon face m, if having in above-mentioned two checks one defective, need to readjust the laser system parameter, until meet above-mentioned two requirements;
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on blue film, aim at simultaneously silicon chip above blue film scraped with scraper plate, silicon chip is sticked at above blue film, there is one of wax to face up glazed paper and be placed on rubber sliver platform, more upwards be placed into the blue film of the silicon chip that pastes blue film on wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size, namely perpendicular to the direction of silicon chip main reference plane, take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip, after having pressed a direction, with the rubber 90-degree rotation on silicon chip and rubber roll, another direction that rolls again silicon chip namely is parallel to the direction of silicon chip main reference plane, and the minimum power of all having disintegrated take all chips is as degree; After sliver, microscopically check sliver situation: separate fully between chip and chip, the chip edge is straight, the chip edge without cracked be qualified.
Advantage of the present invention is:
1. the purple light laser beam becomes a very little light spot energy very high density after focusing on by special-purpose optical system, and cutting-up glassivation film is comparatively easy, and heat affecting is minimum.
2. because the laser cutting-up is non-contact cutting-up, high to the machinery-free stamping press of semiconductor device chip own and cutting-up precision, improve the finished product rate when guaranteeing particular product performance parameters.
The laser Dicing speed be the emery wheel cutting-up 5-8 doubly, and do not need a large amount of deionized waters in the cutting-up process, avoid again the discharging of large quantity of exhaust gas waste water when significantly improving production efficiency, reducing human cost, meet the idea of environmental protection, science sustainable development.
Description of drawings
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is the embodiment of the present invention 1 and 2 structural representations.
Fig. 2 is the embodiment of the present invention 3 and 4 structural representations.
Wherein: 1, laser instrument, 2, the optic path passage, 3, parallel beam expand device, 4, arrangement for deflecting, 5, optical focusing device, 6, air blowing exhaust apparatus, 7, glassivation film, 8, semiconductor device chip, 9, operating platform, 10, the purple light laser beam.
The specific embodiment
as shown in Figure 1, the device of the present invention's cutting-up on semiconductor device chip glassivation film, comprise the laser instrument 1 that can produce purple light laser beam 10, optic path passage 2 for purple light laser beam 10 optic path, the parallel beam expand device 3 that purple light laser beam 10 is dispersed, change the arrangement for deflecting 4 of purple light laser beam 10 parallel directions, the optical focusing device 5 that purple light laser beam 10 after dispersing is focused on, the air blowing exhaust apparatus 6 that the dust that produces in the cutting-up process is blown, the glassivation film 7 on protection single table surface semiconductor device chip surface and the operating platform 9 of placing single table surface semiconductor device chip 8, described laser instrument 1 is connected with optic path passage 2, described parallel beam expand device 3 and arrangement for deflecting 4 are placed on optic path passage 2, described optical focusing device 5 is located at the both sides of purple light laser beam 10, described air blowing exhaust apparatus 6 is located at a side of purple light laser beam 10.
Above-mentioned slitting device is to carry out cutting-up on the single table surface semiconductor device chip of 200 μ m at thickness, and its using method, comprise the steps:
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and with power checker, measure performance number, finding the crystal temperature effect value that is fit to the crystal normal operation is 24 ℃, guarantees that simultaneously the humiture of working environment is stable, guarantees the normal steady operation of laser instrument 1;
The horizontal polariscope of b, adjusting optic path passage 2, guarantee that purple light laser beam 10 is levels from laser instrument 1 launch hole to parallel beam expand device 3 porch;
C, adjusting and the fixing position of parallel beam expand device 3, guarantee that purple light laser beam 10 passes through along the central axis of parallel beam expand device 3;
D, regulate arrangement for deflecting 4, make itself and operating platform horizontal plane angle at 45 °, guarantee purple light laser beam 10 after arrangement for deflecting 4 vertically downward;
E, installation are also regulated optical focusing device 5, guarantee the central axis process of laser beam along optical focusing device 5, and 10 angular deflections of purple light laser beam and diffraction do not occur;
F, regulate and the level angle of test operation platform 9, guarantee purple light laser beam 10 after optical focusing device 5 vertical irradiation in operating platform 9;
G, control purple light laser beam 10 wavelength are 355nm, 20KHZ, adjusting laser instrument low-level pulse width are that 3 μ S, the multiple of dispersing of regulating parallel beam expand device are 8 times frequently to regulate laser works Q, regulate focusing arrangement 5, guarantee that purple light laser beam 10 focuses are between the up and down 50 μ m of glassivation film surface;
H, selection cutting-up line width are 60 μ m, and selecting the electric current of laser instrument is 20A, and the selection Dicing speed is that 30mm/S, laser power are 40%;
After i, laser system adjustment or the product that reply marks while changing wafer batch implement first inspection, surface condition with high-power microscope check cut, that cut presents is straight, the cut both sides are qualified without glass crack, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100 μ of silicon face m, if above-mentioned two the check in have one defective, need to readjust the laser system parameter, until meet above-mentioned two requirements;
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on blue film, aim at simultaneously silicon chip above blue film scraped with scraper plate, silicon chip is sticked at above blue film, there is one of wax to face up glazed paper and be placed on rubber sliver platform, more upwards be placed into the blue film of the silicon chip that pastes blue film on wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size, namely perpendicular to the direction of silicon chip main reference plane, take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip, after having pressed a direction, with the rubber 90-degree rotation on silicon chip and rubber roll, another direction that rolls again silicon chip namely is parallel to the direction of silicon chip main reference plane, and the minimum power of all having disintegrated take all chips is as degree; After sliver, microscopically check sliver situation: separate fully between chip and chip, the chip edge is straight, the chip edge without cracked be qualified.
Embodiment 2
As shown in Figure 1, its structure of device of the present invention's cutting-up on semiconductor device chip glassivation film is with embodiment 1.
Above-mentioned slitting device is to carry out cutting-up on the single table surface semiconductor device chip of 300 μ m at thickness, and its using method, comprise the steps:
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and with power checker, measure performance number, finding the crystal temperature effect value that is fit to the crystal normal operation is 25 ℃, guarantees that simultaneously the humiture of working environment is stable, guarantees the normal steady operation of laser instrument 1;
The horizontal polariscope of b, adjusting optic path passage 2, guarantee that 3 porch are levels to purple light laser beam 10 from the laser instrument launch hole to parallel beam expand device;
C, adjusting and fixing parallel beam expand device 3 positions, guarantee that purple light laser beam 10 passes through along the central axis of parallel beam expand device 3;
D, regulate arrangement for deflecting 4, make itself and operating platform horizontal plane angle at 45 °, guarantee purple light laser beam 10 after arrangement for deflecting 4 vertically downward;
E, installation are also regulated optical focusing device 5, guarantee the central axis process of purple light laser beam 10 along optical focusing device 5, and 10 angular deflections of purple light laser beam and laser beam diffraction do not occur;
F, regulate and the level angle of test operation platform 9, guarantee purple light laser beam 10 after optical focusing device 5 vertical irradiation in operating platform 9;
G, control purple light laser beam 10 wavelength are 355nm, regulate laser works Q frequently 50KHZ, to regulate the laser instrument low-level pulse width be 6 μ S, regulating parallel beam expand device, to disperse multiple be 10 times, regulate focusing arrangement, guarantee that laser beam foucing is between the up and down 50 μ m of glassivation film surface;
H, selection cutting-up line width are 90 μ m, and selecting the electric current of laser instrument is 28A, and the selection Dicing speed is that 60mm/S, laser power are 70%;
After i, laser system adjustment or the product that reply marks while changing wafer batch implement first inspection, surface condition with high-power microscope check cut, that cut presents is straight, the cut both sides are qualified without glass crack, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100 μ of silicon face m, if above-mentioned two the check in have one defective, need to readjust the laser system parameter, until meet above-mentioned two requirements.
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on blue film, aim at simultaneously silicon chip above blue film scraped with scraper plate, silicon chip is sticked at above blue film, there is one of wax to face up glazed paper and be placed on rubber sliver platform, more upwards be placed into the blue film of the silicon chip that pastes blue film on wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size, namely perpendicular to the direction of silicon chip main reference plane, take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip, after having pressed a direction, with the rubber 90-degree rotation on silicon chip and rubber roll, another direction that rolls again silicon chip namely is parallel to the direction of silicon chip main reference plane, and the minimum power of all having disintegrated take all chips is as degree; After sliver, microscopically check sliver situation: separate fully between chip and chip, the chip edge is straight, the chip edge without cracked be qualified.
Embodiment 3
as shown in Figure 2, the device of the present invention's cutting-up on semiconductor device chip glassivation film comprises the laser instrument 1 that can produce purple light laser beam 10, optic path passage 2 for purple light laser beam optic path, the parallel beam expand device 3 that the purple light laser beam is dispersed, change the arrangement for deflecting 4 of purple light laser beam 10 parallel directions, the optical focusing device 5 that purple light laser beam after dispersing is focused on, the air blowing exhaust apparatus 6 that the dust that produces in the cutting-up process is blown, the glassivation film 7 on two mesa semiconductor devices chip 8 surfaces of protection and the operating platform 9 of placing two mesa semiconductor devices chips 8, described laser instrument 1 is connected with optic path passage 2, described parallel beam expand device 3 and arrangement for deflecting 4 are placed on optic path passage 2, described optical focusing device 5 is located at the both sides of purple light laser beam 10, described air blowing exhaust apparatus 6 is located at a side of purple light laser beam 10.
Above-mentioned slitting device is to carry out cutting-up on two mesa semiconductor devices chips of 400 μ m at thickness, and its using method, comprise the steps:
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and with power checker, measure performance number, finding the crystal temperature effect value that is fit to the crystal normal operation is 26 ℃, guarantees that simultaneously the humiture of working environment is stable, guarantees the normal steady operation of laser instrument 1;
The horizontal polariscope of b, adjusting optic path passage 2, guarantee that 3 porch are levels to purple light laser beam 10 from the laser instrument launch hole to parallel beam expand device;
C, adjusting and fixing parallel beam expand device 3 positions, guarantee that purple light laser beam 10 passes through along the central axis of parallel beam expand device 3;
D, regulate arrangement for deflecting 4, make itself and operating platform horizontal plane angle at 45 °, guarantee purple light laser beam 10 after arrangement for deflecting 4 vertically downward;
E, installation are also regulated optical focusing device 5, guarantee the central axis process of purple light laser beam 10 along optical focusing device 5, and laser beam angular deflection and laser beam diffraction do not occur;
F, regulate and the level angle of test operation platform 9, guarantee purple light laser beam 10 after optical focusing device 5 vertical irradiation in operating platform 9;
G, control purple light laser beam 10 wavelength are 355nm, regulate laser works Q frequently 70KHZ, to regulate the laser instrument low-level pulse width be 10 μ S, regulating parallel beam expand device, to disperse multiple be 12 times, regulate focusing arrangement, guarantee that laser beam foucing is between the up and down 50 μ m of glassivation film surface;
H, selection cutting-up line width are 120 μ m, and selecting the electric current of laser instrument is 35A, and the selection Dicing speed is that 100mm/S, laser power are 90%;
After i, laser system adjustment or the product that reply marks while changing wafer batch implement first inspection, surface condition with high-power microscope check cut, that cut presents is straight, the cut both sides are qualified without glass crack, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100 μ of silicon face m, if above-mentioned two the check in have one defective, need to readjust the laser system parameter, until meet above-mentioned two requirements.
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on blue film, aim at simultaneously silicon chip above blue film scraped with scraper plate, silicon chip is sticked at above blue film, there is one of wax to face up glazed paper and be placed on rubber sliver platform, more upwards be placed into the blue film of the silicon chip that pastes blue film on wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size, namely perpendicular to the direction of silicon chip main reference plane, take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip, after having pressed a direction, with the rubber 90-degree rotation on silicon chip and rubber roll, another direction that rolls again silicon chip namely is parallel to the direction of silicon chip main reference plane, and the minimum power of all having disintegrated take all chips is as degree; After sliver, microscopically check sliver situation: separate fully between chip and chip, the chip edge is straight, the chip edge without cracked be qualified.
As shown in Figure 2, its structure of device of the present invention's cutting-up on semiconductor device chip glassivation film is with embodiment 3.
Above-mentioned slitting device is to carry out cutting-up on two mesa semiconductor devices chips of 300 μ m at thickness, and its using method, comprise the steps:
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and with power checker, measure performance number, finding the crystal temperature effect value that is fit to the crystal normal operation is 26 ℃, guarantees that simultaneously the humiture of working environment is stable, guarantees the normal steady operation of laser instrument 1;
The horizontal polariscope of b, adjusting optic path passage 2, guarantee that 3 porch are levels to purple light laser beam 10 from the laser instrument launch hole to parallel beam expand device;
C, adjusting and fixing parallel beam expand device 3 positions, guarantee that purple light laser beam 10 passes through along the central axis of parallel beam expand device 3;
D, regulate arrangement for deflecting 4, make itself and operating platform horizontal plane angle at 45 °, guarantee laser beam after arrangement for deflecting 4 vertically downward;
E, installation are also regulated optical focusing device 5, guarantee the central axis process of purple light laser beam 10 along optical focusing device 5, and laser beam angular deflection and laser beam diffraction do not occur;
F, regulate and the level angle of test operation platform 9, guarantee purple light laser beam 10 after optical focusing device 5 vertical irradiation in operating platform 9;
G, control purple light laser beam 10 wavelength are 355nm, regulate laser works Q frequently 60KHZ, to regulate the laser instrument low-level pulse width be 8 μ S, regulating parallel beam expand device, to disperse multiple be 10 times, regulate focusing arrangement, guarantee that laser beam foucing is between the up and down 50 μ m of glassivation film surface;
H, selection cutting-up line width are 110 μ m, and selecting the electric current of laser instrument is 32A, and the selection Dicing speed is that 90mm/S, laser power are 85%;
After i, laser system adjustment or the product that reply marks while changing wafer batch implement first inspection, surface condition with high-power microscope check cut, that cut presents is straight, the cut both sides are qualified without glass crack, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100 μ of silicon face m, if above-mentioned two the check in have one defective, need to readjust the laser system parameter, until meet above-mentioned two requirements.
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on blue film, aim at simultaneously silicon chip above blue film scraped with scraper plate, silicon chip is sticked at above blue film, there is one of wax to face up glazed paper and be placed on rubber sliver platform, more upwards be placed into the blue film of the silicon chip that pastes blue film on wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size, namely perpendicular to the direction of silicon chip main reference plane, take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip, after having pressed a direction, with the rubber 90-degree rotation on silicon chip and rubber roll, another direction that rolls again silicon chip namely is parallel to the direction of silicon chip main reference plane, and the minimum power of all having disintegrated take all chips is as degree; After sliver, microscopically check sliver situation: separate fully between chip and chip, the chip edge is straight, the chip edge without cracked be qualified.
Claims (1)
1. the using method of the device of cutting-up on semiconductor device chip glassivation film, is characterized in that: comprise the steps:
A, at first regulate 0.1 ℃ of the each fine setting of crystal temperature effect value, and with power checker, measure performance number, find the crystal temperature effect value that is fit to the crystal normal operation to be 24-26 ℃, guarantee that simultaneously the humiture of working environment is stable, guarantee the normal steady operation of laser instrument;
The horizontal polariscope of b, adjusting optic path passage, guarantee that the purple light laser beam is level from laser instrument launch hole to parallel beam expand device porch;
C, adjusting and fixing parallel beam expand device position, guarantee that the purple light laser beam passes through along the central axis of parallel beam expand device;
D, regulate arrangement for deflecting, make itself and operating platform horizontal plane angle at 45 °, guarantee the purple light laser beam after arrangement for deflecting vertically downward;
E, installation are also regulated optical focusing device, guarantee the central axis process of purple light laser beam along optical focusing device, and laser beam angular deflection and laser beam diffraction do not occur;
F, regulate and the level angle of test operation platform, guarantee laser beam after optical focusing device vertical irradiation in operating platform;
G, control purple light laser beam wavelength are 355nm, regulate in 20-70KHZ scope laser works Q frequently, regulate the laser instrument low-level pulse width 1-10 μ S scopes in, the adjusting parallel beam expand device is dispersed multiple in 6-12 times of scopes, regulate focusing arrangement to meet the cutting-up needs of different cutting-up objects, guarantee that laser beam foucing is between the up and down 50 μ m of glassivation film surface;
H, the different qualities according to the glassivation film, the different-thickness of semiconductor device chip, cutting-up line width, sliver complexity, selecting the electric current of suitable size, selecting suitable Dicing speed in the 30-100mm/S scope, selecting suitable laser power between 30%-90% between 20-35A;
After i, laser system adjustment or the product that reply marks while changing wafer batch implement first inspection, surface condition with high-power microscope check cut, cut presents straight, the cut both sides are qualified without glass crack, check the cutting-up degree of depth with high-power microscope, the cutting-up degree of depth is to be qualified at the following 0-100 μ of silicon face m, if having in above-mentioned two checks one defective, need to readjust the laser system parameter, until meet above-mentioned two requirements;
J, after the assay was approved, the not cutting-up face of cutting-up silicon chip is attached on blue film, aim at simultaneously silicon chip above blue film scraped with scraper plate, silicon chip is sticked at above blue film, there is one of wax to face up glazed paper and be placed on rubber sliver platform, more upwards be placed into the blue film of the silicon chip that pastes blue film on wax light paper; Select the suitable soft rubber roller of diameter and silicon chip size, namely perpendicular to the direction of silicon chip main reference plane, take rubber roll to roll silicon chip with suitable dynamics along the positive direction of chip, after having pressed a direction, with the rubber 90-degree rotation on silicon chip and rubber roll, another direction that rolls again silicon chip namely is parallel to the direction of silicon chip main reference plane, and the minimum power of all having disintegrated take all chips is as degree; After sliver, microscopically check sliver situation: separate fully between chip and chip, the chip edge is straight, the chip edge without cracked be qualified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102104162A CN102284792B (en) | 2011-07-26 | 2011-07-26 | Device for scraping and cutting on semiconductor device chip glass passive film and using method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102104162A CN102284792B (en) | 2011-07-26 | 2011-07-26 | Device for scraping and cutting on semiconductor device chip glass passive film and using method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102284792A CN102284792A (en) | 2011-12-21 |
| CN102284792B true CN102284792B (en) | 2013-11-13 |
Family
ID=45331690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102104162A Active CN102284792B (en) | 2011-07-26 | 2011-07-26 | Device for scraping and cutting on semiconductor device chip glass passive film and using method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102284792B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103551735A (en) * | 2013-10-18 | 2014-02-05 | 昆山思拓机器有限公司 | Processing device and process for conductive rubber pad |
| CN114749811B (en) * | 2022-03-29 | 2023-06-09 | 华中科技大学 | System and method for machining carbon fiber composite material holes based on laser double-beam rotary cutting |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1117204A (en) * | 1995-03-17 | 1996-02-21 | 山东师范大学 | Glassivation method for large mesa power semiconductor device |
| CN1348208A (en) * | 2000-10-10 | 2002-05-08 | 株式会社东芝 | Manufacturing method of semiconductor device |
| CN1386081A (en) * | 2000-07-26 | 2002-12-18 | Ase美国公司 | Laser cutting of semiconductor materials |
| CN101172321A (en) * | 2006-11-02 | 2008-05-07 | 索尼株式会社 | Laser processing |
| CN201405162Y (en) * | 2009-05-12 | 2010-02-17 | 苏州德龙激光有限公司 | Novel UV laser device for cutting copper substrate used for high-power LED chip |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2803550B1 (en) * | 2000-01-10 | 2002-03-29 | Air Liquide | METHOD AND INSTALLATION FOR LASER CUTTING OF STAINLESS STEEL OR COATED STEEL, OR OF ALUMINUM AND ALLOYS WITH BIFOCAL OPTICS |
| KR101266880B1 (en) * | 2006-06-08 | 2013-05-24 | 삼성디스플레이 주식회사 | Method for manufacturing polarizer and laser processing system |
| JP2009006350A (en) * | 2007-06-27 | 2009-01-15 | Sony Corp | Laser beam machining apparatus and method, debris recovery mechanism and method, and manufacturing method of display panel |
| JP2010212478A (en) * | 2009-03-11 | 2010-09-24 | Panasonic Corp | Laser processing method, and laser processing device |
-
2011
- 2011-07-26 CN CN2011102104162A patent/CN102284792B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1117204A (en) * | 1995-03-17 | 1996-02-21 | 山东师范大学 | Glassivation method for large mesa power semiconductor device |
| CN1386081A (en) * | 2000-07-26 | 2002-12-18 | Ase美国公司 | Laser cutting of semiconductor materials |
| CN1348208A (en) * | 2000-10-10 | 2002-05-08 | 株式会社东芝 | Manufacturing method of semiconductor device |
| CN101172321A (en) * | 2006-11-02 | 2008-05-07 | 索尼株式会社 | Laser processing |
| CN201405162Y (en) * | 2009-05-12 | 2010-02-17 | 苏州德龙激光有限公司 | Novel UV laser device for cutting copper substrate used for high-power LED chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102284792A (en) | 2011-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6585120B2 (en) | A system that performs laser filamentation inside a transparent material | |
| US10144088B2 (en) | Method and apparatus for laser processing of silicon by filamentation of burst ultrafast laser pulses | |
| CN106966580B (en) | Method for cutting glass by femtosecond laser | |
| CN104174994B (en) | light-dividing device and method thereof | |
| US7638729B2 (en) | Apparatus for cutting substrate and method using the same | |
| WO2018072054A1 (en) | Full-laser scribing method for solar cell module on flexible stainless steel substrate | |
| CN106458693A (en) | Methods and apparatus for cutting radii in flexible thin glass | |
| CN101982285B (en) | Laser grooving and scribing system and laser grooving and scribing method for solar panel | |
| US20110126688A1 (en) | Scribing apparatus for thin film solar cell | |
| CN102284792B (en) | Device for scraping and cutting on semiconductor device chip glass passive film and using method thereof | |
| CN102709163B (en) | A kind of crystalline silicon etching technique based on laser interference induced reaction | |
| CN115000203B (en) | Single crystal silicon micro-nano double-scale antireflection suede and preparation method thereof | |
| CN104425645B (en) | CIGS thin film solaode stays the method on the clear limit of Mo | |
| CN204122929U (en) | Light-dividing device | |
| CN104237997A (en) | Device and method for carrying out laser machining on light guide board inside glass | |
| CN102248289A (en) | Laser scribing insulation equipment for crystalline silicon solar cell | |
| CN107685196B (en) | Method and device for processing wafer by laser | |
| CN103408221B (en) | Cutting device for OLED encapsulation panel | |
| CN107824975A (en) | A kind of multiple head laser coder based on energy light splitting technology | |
| CN107971645A (en) | Quaternary LED wafer is exempted to coat laser surface cutter device and its method | |
| CN102837369B (en) | Process method for green laser scribing sapphire | |
| CN201841362U (en) | Picosecond laser scribing device for LED wafer | |
| CN201349017Y (en) | Laser film engraving machine for production amorphous silicon thin-film solar cell | |
| CN104646834A (en) | Laser scribing method and system | |
| CN207414590U (en) | A kind of multiple head laser coder based on energy light splitting technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 226200, No. 8, Xinglong Road, Chengbei Industrial Zone, Qidong Economic Development Zone, Jiangsu, Nantong Applicant after: Jiangsu Jiejie Microelectronics Co., Ltd. Address before: 226200, No. 8, Xinglong Road, Chengbei Industrial Zone, Qidong Economic Development Zone, Jiangsu, Nantong Applicant before: Qidong Jiejie Micro-electronic Co., Ltd. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: QIDONG JIEJIE MICRO-ELECTRONIC CO., LTD. TO: JIANGSU JIEJIE MICROELECTRONICS CO., LTD. |
|
| C53 | Correction of patent for invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 226200, 8, Xinglong Road, Qidong science and Technology Pioneer Park, Jiangsu Applicant after: Jiangsu Jiejie Microelectronics Co., Ltd. Address before: 226200, No. 8, Xinglong Road, Chengbei Industrial Zone, Qidong Economic Development Zone, Jiangsu, Nantong Applicant before: Jiangsu Jiejie Microelectronics Co., Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: No.3000 Qiantangjiang Road, Qidong Economic Development Zone, Nantong City, Jiangsu Province Patentee after: JIANGSU JIEJIE MICROELECTRONICS Co.,Ltd. Address before: 226200, 8, Xinglong Road, Qidong science and Technology Pioneer Park, Jiangsu Patentee before: JIANGSU JIEJIE MICROELECTRONICS Co.,Ltd. |
|
| CP02 | Change in the address of a patent holder |