CN102267022A - Lead-free tin-gold alloy solder for photoelectric packaging and method for manufacturing lead-free tin-gold alloy solder - Google Patents
Lead-free tin-gold alloy solder for photoelectric packaging and method for manufacturing lead-free tin-gold alloy solder Download PDFInfo
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- CN102267022A CN102267022A CN2011102121539A CN201110212153A CN102267022A CN 102267022 A CN102267022 A CN 102267022A CN 2011102121539 A CN2011102121539 A CN 2011102121539A CN 201110212153 A CN201110212153 A CN 201110212153A CN 102267022 A CN102267022 A CN 102267022A
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Abstract
The invention discloses a lead-free tin-gold alloy solder for photoelectric packaging. The solder consists of raw materials, namely 19 to 21 weight parts of tin and 79 to 81 weight parts of gold. Meanwhile, the invention also provides a method for manufacturing the lead-free tin-gold alloy solder. The method comprises the following steps of: A, adding the raw materials, namely 1 to 10 weight parts of the tin and 90 to 99 weight parts of the gold into a high-temperature intermediate frequency furnace to manufacture a tin-gold mother alloy solution; B, adding the tin into the tin-gold mother alloy solution, and diluting to obtain 19 to 21 weight parts of the tin and 79 to 81 weight parts of the gold; C, adding an antioxidant to manufacture a tin gold solder raw material; and D, finally manufacturing the required tin-gold alloy solder. In the invention, the tin and the gold are configured into a lead-free solder of which a melting point is about 280 DEG C according to a certain proportion, so the problems of poor electric conduction and poor heat conduction of a solid crystal adhesive connection method, the problem of environmental pollution of lead, and the problems of long service life of a product caused by poor radiation of the product and insufficient welding mechanical bonding strength are solved.
Description
Technical field
The present invention relates to that a kind of LED of being used for encapsulation waits photoelectric field and to the chip Packaging Industry that electric conductivity and heat dispersion are had relatively high expectations, relate in particular to a kind of optoelectronic package with unleaded Sillim solder and preparation method thereof.
Background technology
In opto-electronics, the structure of photoelectric subassembly dress mode major part is still in soldering structure dress mode.And in the past the electronic building brick scolding tin that engages the most normal use (tin-wt63%, (copper-wt0.5%) two scolding tin are main for tin-wt96.5%, silver-wt3% for lead-wt37%) and SAC alloy with leypewter.The alloy that tin lead welding tin is made up of tin 63%, plumbous 37% percentage by weight, eutectic point is 183 ℃, belong to soft soldering scolder (Soft Solder), it has good wetability (Wetting), weldability (Solderability), corrosion resistance (Anticorrosive) and suitable physical property, again because of various advantages such as low price and low melting points, so tin lead welding tin can't be replaced by other scolder in the past in decades always.Yet environmental consciousness strengthens in recent years, and the harm that plumbous brain to human body, nerve, kidney, liver etc. cause reaches the problem that environment is polluted, and has caused gradually widely and has noted.Therefore many industrial countries also begin to work out the use that bill limits lead-containing materials, even the lead-free of European Union ban came into force in 2008.Therefore, the research of lead-free solder has been popular topic.
The optoelectronic package technology that present industry generally adopts is the crystal-bonding adhesive bonding method and Pb-Sn paste Reflow Soldering method is arranged.Crystal-bonding adhesive bonding method shortcoming is that conduction and heat-conducting effect are poor, has shortened the service life of product to a great extent.And leaded material can damage human body and environment, more can remote-effects arrive environment.Because environmental issue was much accounted of gradually in recent years, at present on the scolding tin field, studies unleaded and do not have the scaling powder scolder or the processing procedure mode has been an important trend.
Summary of the invention
At weak point of the prior art, the invention provides a kind of the solution with the optoelectronic package of the conduction of crystal-bonding adhesive bonding method and the bad problem of heat conduction and plumbous pollution problem to environment with unleaded Sillim solder.This optoelectronic package has also solved the bad problem that causes long and electroplating equipment wielding machine bond strength deficiency in product service life of product heat radiation that present traditional optoelectronic package technology produced with unleaded Sillim solder.
Simultaneously, the present invention also provides a kind of preparation method that realizes the optoelectronic package of above-mentioned purpose with unleaded Sillim solder.
A kind of optoelectronic package provided by the invention is with unleaded Sillim solder, and this solder is made up of following raw materials in part by weight: tin: 19～21 and gold: 79～81.
Further, this solder is made up of following raw materials in part by weight: tin: 20 and golden: 80.
A kind of optoelectronic package provided by the invention comprises the steps: with the preparation method of unleaded Sillim solder
A, in the high temperature intermediate frequency furnace, press the row weight portion and add raw material: tin: 1～10 and gold: 90～99; Treat to make Sillim's foundry alloy solution after gold dissolves fully;
B, in Sillim's foundry alloy solution, add tin and dilute, make the tin after the adding and the weight portion of gold be: tin: 19～21 and gold: 79～81;
The antioxidant of C and then adding proper proportion makes Sillim's scolder raw material;
D, the last Sillim's solder that is made into required form again.
Further, in step B, behind the adding tin, the weight portion of tin and gold is: tin in Sillim's foundry alloy solution: 20 and golden: 80.
A kind of optoelectronic package of the present invention with unleaded Sillim solder and preparation method thereof compared with prior art has following advantage:
1, to be configured to fusing point with tin and gold with certain proportion be lead-free solder about 280 ℃ in the present invention, solved conduction and bad problem of heat conduction and plumbous pollution problem to environment with the crystal-bonding adhesive bonding method.
2, the lead-free solder of tin and gold configuration has also solved the bad problem that causes long and electroplating equipment wielding machine bond strength deficiency in product service life of product heat radiation that present traditional optoelectronic package technology produced.
3, optoelectronic package of the present invention has the advantage of service life of prolonging photoelectric cell, environmental protection etc. with unleaded Sillim solder and solder obtained by this method.
Description of drawings
Fig. 1 is the flow chart of optoelectronic package with the preparation method of unleaded Sillim solder.
The specific embodiment
Below in conjunction with the drawings and specific embodiments the present invention is done to describe in further detail.
A kind of optoelectronic package is with unleaded Sillim solder, and this solder is made up of following raw materials in part by weight: tin: 19～21 and gold: 79～81.
This solder is made up of following raw materials in part by weight: tin: 20 and golden: 80.Tin accounts for 20% in Sillim's alloy, and gold accounts for 80%, its eutectic best results when alloy melting point is 280 ℃.
A kind of optoelectronic package is with the preparation method of unleaded Sillim solder, the flow process of making this solder as shown in Figure 1, this method comprises the steps:
A, in the high temperature intermediate frequency furnace, press the row weight portion and add raw material: tin: 1～10 and gold: 90～99; Treat to make Sillim's foundry alloy solution after gold dissolves fully;
B, in Sillim's foundry alloy solution, add tin and dilute, make the tin after the adding and the weight portion of gold be: tin: 19～21 and gold: 79～81;
C and then add antioxidant (antioxidant can adopt incorporated in tin make by elements such as phosphorus, potassium, germanium) makes Sillim's scolder raw material;
D, the last Sillim's solder that is made into required form again are as Sillim's film (sheet), Sillim's ball or other shape Sillim scolder.
In step B, in Sillim's foundry alloy solution, add tin after, its eutectic best results when the weight portion of tin and gold is 280 ℃.
Embodiment 1
A kind of optoelectronic package comprises the steps: with the preparation method of unleaded Sillim solder
A, in the high temperature intermediate frequency furnace, press the row weight portion and add raw material: tin: 1 and gold: 99; Treat to make Sillim's foundry alloy solution after gold dissolves fully;
B, in Sillim's foundry alloy solution, add tin and dilute, make the tin after the adding and the weight portion of gold be: tin: 19 and gold: 81;
C and then adding antioxidant make Sillim's scolder raw material;
D, the last Sillim's solder that is made into required form again.
Sillim's solder that detection is made by said method is compared with the various performance parameters of traditional leypewter, and is as shown in the table:
| Parameter | SnAu | SnPb |
| Fusing point (℃) | 282 | 183 |
| Surface tension (dyne/cm) | 687（326℃） | 380（260℃） |
| Density (g/cm3) | 14.5 | 8.4 |
| Resistivity (μ Ω cm) | 8.6 | 15 |
| Thermal conductivity (w/cm ℃) | 0.62（85℃） | 0.5（30~85℃） |
| Thermal coefficient of expansion (* 10-6/ ° of C) | 16 | 25 |
| Tensile strength (MPa) | 274 | 32 |
| Shear strength (MPa) | 142.4 | 23 |
| Elongation (%) | 39 | 31 |
Embodiment 2
A kind of optoelectronic package comprises the steps: with the preparation method of unleaded Sillim solder
A, in the high temperature intermediate frequency furnace, press the row weight portion and add raw material: tin: 5 and gold: 95; Treat to make Sillim's foundry alloy solution after gold dissolves fully;
B, in Sillim's foundry alloy solution, add tin and dilute, make the tin after the adding and the weight portion of gold be: tin: 20 and gold: 80;
C and then adding antioxidant make Sillim's scolder raw material;
D, the last Sillim's solder that is made into required form again.
Sillim's solder that detection is made by said method is compared with the various performance parameters of traditional leypewter, and is as shown in the table:
| Parameter | SnAu | SnPb |
| Fusing point (℃) | 280 | 183 |
| Surface tension (dyne/cm) | 678（326℃） | 380（260℃） |
| Density (g/cm3) | 14.51 | 8.4 |
| Resistivity (μ Ω cm) | 9 | 15 |
| Thermal conductivity (w/cm ℃) | 0.68（85℃） | 0.5（30~85℃） |
| Thermal coefficient of expansion (CTE, Ppm/K) | 16 | 25 |
| Tensile strength (MPa) | 276 | 32 |
| Shear strength (MPa) | 144 | 23 |
| Elongation (%) | 41 | 31 |
Embodiment 3
A kind of optoelectronic package comprises the steps: with the preparation method of unleaded Sillim solder
A, in the high temperature intermediate frequency furnace, press the row weight portion and add raw material: tin: 10 and gold: 90; Treat to make Sillim's foundry alloy solution after gold dissolves fully;
B, in Sillim's foundry alloy solution, add tin and dilute, make the tin after the adding and the weight portion of gold be: tin: 21 and gold: 79;
C and then adding antioxidant make Sillim's scolder raw material;
D, the last Sillim's solder that is made into required form again.
Sillim's solder that detection is made by said method is compared with the various performance parameters of traditional leypewter, and is as shown in the table:
| Parameter | SnAu | SnPb |
| Fusing point (℃) | 284 | 183 |
| Surface tension (dyne/cm) | 689 | 380（260℃） |
| Density (g/cm3) | 14.53 | 8.4 |
| Resistivity (μ Ω cm) | 11 | 15 |
| Thermal conductivity (w/cm ℃) | 0.7（85℃） | 0.5（30~85℃） |
| Thermal coefficient of expansion (CTE, Ppm/K) | 19 | 25 |
| Tensile strength (MPa) | 279 | 32 |
| Shear strength (MPa) | 146 | 23 |
| Elongation (%) | 35 | 31 |
Explanation is at last, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not breaking away from the aim and the scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (4)
1. an optoelectronic package is characterized in that with unleaded Sillim solder this solder is made up of following raw materials in part by weight: tin: 19～21 and golden: 79～81.
2. a kind of optoelectronic package according to claim 1 is characterized in that with unleaded Sillim solder this solder is made up of following raw materials in part by weight: tin: 20 and golden: 80.
3. an optoelectronic package is characterized in that with the preparation method of unleaded Sillim solder, comprises the steps:
A, in the high temperature intermediate frequency furnace, press the row weight portion and add raw material: tin: 1～10 and gold: 90～99; Treat to make Sillim's foundry alloy solution after gold dissolves fully;
B, in Sillim's foundry alloy solution, add tin and dilute, make the tin after the adding and the weight portion of gold be: tin: 19～21 and gold: 79～81;
C and then adding antioxidant make Sillim's scolder raw material;
D, the last Sillim's solder that is made into required form again.
4. a kind of optoelectronic package according to claim 3 is characterized in that with the preparation method of unleaded Sillim solder in step B, behind the adding tin, the weight portion of tin and gold is: tin in Sillim's foundry alloy solution: 20 and golden: 80.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102121539A CN102267022A (en) | 2011-07-27 | 2011-07-27 | Lead-free tin-gold alloy solder for photoelectric packaging and method for manufacturing lead-free tin-gold alloy solder |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102121539A CN102267022A (en) | 2011-07-27 | 2011-07-27 | Lead-free tin-gold alloy solder for photoelectric packaging and method for manufacturing lead-free tin-gold alloy solder |
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| CN102267022A true CN102267022A (en) | 2011-12-07 |
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| CN2011102121539A Pending CN102267022A (en) | 2011-07-27 | 2011-07-27 | Lead-free tin-gold alloy solder for photoelectric packaging and method for manufacturing lead-free tin-gold alloy solder |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104946926A (en) * | 2015-07-10 | 2015-09-30 | 重庆群崴电子材料有限公司 | Method for preparing low-silver multi-component alloy solder ball |
| CN108941967A (en) * | 2018-08-09 | 2018-12-07 | 重庆源晶电子材料有限公司 | A kind of low temperature has core solder stick and preparation method thereof |
| CN110052735A (en) * | 2018-11-22 | 2019-07-26 | 哈尔滨理工大学 | A kind of high thermal conductivity low cost composite solder paste and preparation method thereof encapsulated for second level and three-level |
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| CN1066411A (en) * | 1992-04-09 | 1992-11-25 | 中国有色金属工业总公司昆明贵金属研究所 | The manufacture method of aurum tin soldering material |
| JP2000026988A (en) * | 1998-07-10 | 2000-01-25 | Nau Chemical:Kk | Au-Sn WELDING MEMBER AND ITS PRODUCTION |
| JP2000246487A (en) * | 1999-02-24 | 2000-09-12 | Tokuriki Honten Co Ltd | MANUFACTURE OF 80Au-Sn BRAZING FILLER METAL |
| JP2001150182A (en) * | 1999-11-22 | 2001-06-05 | Mitsubishi Materials Corp | Gold-tin alloy brazing filler metal having excellent wettability |
| EP1341229A1 (en) * | 2000-11-27 | 2003-09-03 | Tanaka Kikinzoku Kogyo Kabushiki Kaisha | Method for hermetic sealing of electronic parts |
| CN1600495A (en) * | 2004-10-27 | 2005-03-30 | 新磊微制造股份有限公司 | structure of stannum-gold solder in method for joining conductors and application |
| EP1777032A1 (en) * | 2004-06-28 | 2007-04-25 | Mitsubishi Materials Corporation | Au-Sn ALLOY POWDER FOR SOLDER PASTE |
| CN102114584A (en) * | 2009-12-30 | 2011-07-06 | 北京有色金属与稀土应用研究所 | Preparation method for AuSn20 alloy brazing filler metal used for packaging integrated circuit and usage thereof |
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2011
- 2011-07-27 CN CN2011102121539A patent/CN102267022A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1066411A (en) * | 1992-04-09 | 1992-11-25 | 中国有色金属工业总公司昆明贵金属研究所 | The manufacture method of aurum tin soldering material |
| JP2000026988A (en) * | 1998-07-10 | 2000-01-25 | Nau Chemical:Kk | Au-Sn WELDING MEMBER AND ITS PRODUCTION |
| JP2000246487A (en) * | 1999-02-24 | 2000-09-12 | Tokuriki Honten Co Ltd | MANUFACTURE OF 80Au-Sn BRAZING FILLER METAL |
| JP2001150182A (en) * | 1999-11-22 | 2001-06-05 | Mitsubishi Materials Corp | Gold-tin alloy brazing filler metal having excellent wettability |
| EP1341229A1 (en) * | 2000-11-27 | 2003-09-03 | Tanaka Kikinzoku Kogyo Kabushiki Kaisha | Method for hermetic sealing of electronic parts |
| EP1777032A1 (en) * | 2004-06-28 | 2007-04-25 | Mitsubishi Materials Corporation | Au-Sn ALLOY POWDER FOR SOLDER PASTE |
| CN1600495A (en) * | 2004-10-27 | 2005-03-30 | 新磊微制造股份有限公司 | structure of stannum-gold solder in method for joining conductors and application |
| CN102114584A (en) * | 2009-12-30 | 2011-07-06 | 北京有色金属与稀土应用研究所 | Preparation method for AuSn20 alloy brazing filler metal used for packaging integrated circuit and usage thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104946926A (en) * | 2015-07-10 | 2015-09-30 | 重庆群崴电子材料有限公司 | Method for preparing low-silver multi-component alloy solder ball |
| CN108941967A (en) * | 2018-08-09 | 2018-12-07 | 重庆源晶电子材料有限公司 | A kind of low temperature has core solder stick and preparation method thereof |
| CN110052735A (en) * | 2018-11-22 | 2019-07-26 | 哈尔滨理工大学 | A kind of high thermal conductivity low cost composite solder paste and preparation method thereof encapsulated for second level and three-level |
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Application publication date: 20111207 |