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CN102240987B - Synthesis copper dish abrasive disk - Google Patents

Synthesis copper dish abrasive disk Download PDF

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Publication number
CN102240987B
CN102240987B CN201110143354.8A CN201110143354A CN102240987B CN 102240987 B CN102240987 B CN 102240987B CN 201110143354 A CN201110143354 A CN 201110143354A CN 102240987 B CN102240987 B CN 102240987B
Authority
CN
China
Prior art keywords
powder
abrasive disk
polishing
mixture
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110143354.8A
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Chinese (zh)
Other versions
CN102240987A (en
Inventor
朱孟奎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHANGHAI BAILANDUO ELECTRONIC TECHNOLOGY CO LTD
Original Assignee
SHANGHAI BAILANDUO ELECTRONIC TECHNOLOGY CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHANGHAI BAILANDUO ELECTRONIC TECHNOLOGY CO LTD filed Critical SHANGHAI BAILANDUO ELECTRONIC TECHNOLOGY CO LTD
Priority to CN201110143354.8A priority Critical patent/CN102240987B/en
Publication of CN102240987A publication Critical patent/CN102240987A/en
Application granted granted Critical
Publication of CN102240987B publication Critical patent/CN102240987B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Polishing Bodies And Polishing Tools (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The present invention discloses a kind of synthesis copper dish abrasive disk, it is characterized in that being made up of following component and proportion substance: copper powder 90~95%, nickel powder 1~5%, cerium powder 3~10%, after mixing, add the epoxy resin of 10~50% and the mixture of polyurethane adhesive of said components total amount; Said mixture being heated to 100~200 DEG C in reaction vessel, mold pressing after fully stirring, cooling 8~15h is shaped. The present invention is used for the grinding and polishing of LED chip, LED substrate, LED display optical crystal, silicon chip, compound crystal, liquid crystal panel, jewel, pottery, germanium sheet, metal works etc., it is possible to significantly improve the removal rates of workpiece.

Description

Synthesis copper dish abrasive disk
Technical field
The present invention relates to a kind of abrasive disk, for the smooth of delicate workpieces and grinding, synthesize copper dish abrasive disk in particular to one.
Background technology
Special workpiece has requirement for the planeness on its surface, such as LED chip, LED substrate, LED display optical crystal, silicon chip, compound crystal, liquid crystal panel, jewel, pottery, germanium sheet, metal works etc., usually the flattening process of these workpiece surface needs abrasive disk, then is equipped with lapping liquid and carries out polishing.
Due to abrasive disk need with lapping liquid with the use of, need regularly to be cleaned by abrasive disk, in the process that a large amount of workpiece is carried out grinding, removal rates can be reduced, and inconvenience installed by existing abrasive disk, do not have the special accessory for installing, the production efficiency of the whole flow process causing workpiece smooth reduces, it is to increase production cost.
A kind of new method is reserved blank at the annular recesses center on the surface of synthesis copper dish body, and add other parts various in blank space, such as open holes, blowdown hole etc., other functional components can also be installed, the shaping tool of synthesis copper dish is had high requirements by this, the composition of synthesis copper dish needs containing the component that is easily shaped, and to be kept synthesizing the hardness that copper dish has metal. According to above-mentioned requirements, a kind of synthesis copper dish preparation method coordinating above-mentioned functions to require of market demand, thus more improve the smooth speed of workpiece.
Summary of the invention
For solving the problems of the technologies described above, the present invention provides a kind of synthesis copper dish abrasive disk, adds, in synthesis copper dish, the component that is easily shaped so that it is meet the conversion of novel synthesis copper dish different shape.
The present invention is realized by following technical scheme:
A kind of synthesis copper dish abrasive disk, is made up of following component and proportion substance:
Copper powder 90~95%;
Nickel powder 1~5%;
Cerium powder 3~10%,
After above-mentioned three kinds of materials mix, add the epoxy resin of 10~50% and the mixture of polyurethane adhesive of said components total amount.
Described copper powder is purity is the copper powder of more than 99.00%.
Described epoxy resin and polyurethane adhesive are commercially available prod.
The preparation method of this synthesis copper dish abrasive disk is:
Said mixture being heated to 100~200 DEG C in reaction vessel, mold pressing after fully stirring, cooling 8~15h is shaped.
The useful effect of the present invention is: the present invention is applicable to the formation process of LED chip, LED substrate, LED display optical crystal, silicon chip, compound crystal, liquid crystal panel, jewel, pottery, germanium sheet, metal works etc., coordinate the practicality of lapping liquid, make the formation process of delicate workpieces faster, it is to increase production efficiency.
Embodiment
Below in conjunction with embodiment, the present invention will be further described.
Embodiment 1
1, preparation method:
Reaction vessel adds following component 100Kg:
Copper powder 90Kg;
Nickel powder 5Kg;
Cerium powder 5Kg,
After above-mentioned three kinds of materials mix, add the epoxy resin of 10Kg and the mixture of polyurethane adhesive.
Above-mentioned substance is heated to 100 DEG C in reaction vessel, mold pressing after fully stirring, and cooling 8h is shaped.
2, technical indicator: this dish is arranged on special-purpose polishing machine for (hv800-1000) by the copper dish hardness of this processes, card carves screw thread (carving the screw thread that the degree of depth is 150-200 μm with the cutter of diamond cutter V60R30) and coordinates special polishing fluid (granularity of polishing fluid is 5-7 μm) polishing 2 inches of 5 sapphire sheet, polishing front surface roughness is at about 0.05 μm, polish pressure is 40 kilograms, polishing disk rotating speed is 80rpm, polishing fluid flow is 2mlamin, polishing time is 10min, after polishing, sapphire sheet surfaceness turns into 0.007 μm. glazed surface is without obvious cut, and polishing speed is 2.0 μm/min.
Embodiment 2
1, preparation method:
Reaction vessel adds following component 100Kg:
Copper powder 95Kg;
Nickel powder 3Kg;
Cerium powder 2Kg,
After above-mentioned three kinds of materials mix, add the epoxy resin of 30Kg and the mixture of polyurethane adhesive.
Above-mentioned substance is heated to 200 DEG C in reaction vessel, mold pressing after fully stirring, and cooling 12h is shaped.
2, technical indicator:
This dish is arranged on special-purpose polishing machine for (hv1000-1200) by the copper dish hardness of this processes, card carves screw thread (carving the screw thread that the degree of depth is 150-200 μm with the cutter of diamond cutter V60R30) and coordinates special polishing fluid (granularity of polishing fluid is 5-7 μm) polishing 2 inches of 5 sapphire sheet, polishing front surface roughness is at about 0.05 μm, polish pressure is 40 kilograms, polishing disk rotating speed is 80rpm, polishing fluid flow is 2ml/min, polishing time is 10min, and after polishing, sapphire sheet surfaceness turns into 0.009 μm. Glazed surface is without obvious cut, and polishing speed is 2.3 μm/min.
Embodiment 3
1, preparation method:
Reaction vessel adds following component 100Kg:
Copper powder 90Kg;
Nickel powder 2Kg;
Cerium powder 8Kg,
After above-mentioned three kinds of materials mix, add the epoxy resin of 50Kg and the mixture of polyurethane adhesive.
Above-mentioned substance is heated to 150 DEG C in reaction vessel, mold pressing after fully stirring, and cooling 10h is shaped.
2, technical indicator: this dish is arranged on special-purpose polishing machine for (hv600-800) by the copper dish hardness of this processes, card carves screw thread (carving the screw thread that the degree of depth is 150-200 μm with the cutter of diamond cutter V60R30) and coordinates special polishing fluid (granularity of polishing fluid is 5-7 μm) polishing 2 inches of 5 sapphire sheet, polishing front surface roughness is at about 0.05 μm, polish pressure is 40 kilograms, polishing disk rotating speed is 80rpm, polishing fluid flow is 2ml/min, polishing time is 10min, after polishing, sapphire sheet surfaceness turns into 0.006 μm. glazed surface is without obvious cut, and polishing speed is 1.7 μm/min.

Claims (1)

1. a synthesis copper dish abrasive disk, it is characterised in that be made up of following component and proportion substance:
Copper powder 90~95%;
Nickel powder 2~5%;
Cerium powder 3~8%,
After above-mentioned three kinds of materials mix, add the epoxy resin of 10~50% and the mixture of polyurethane adhesive of said components total amount; Described copper powder is purity is the copper powder of more than 99.00%;
Described abrasive disk is realized by following method: adds copper powder 90~95%, nickel powder 2~5%, cerium powder 3~8% in the mixing container, mix and backward blending ingredients has added the epoxy resin of total amount 10~50% and the mixture of polyurethane adhesive, stir, it is warming up to 100~200 DEG C, continue fully to stir, mold pressing, cooling 8~15h postforming.
CN201110143354.8A 2011-05-30 2011-05-30 Synthesis copper dish abrasive disk Expired - Fee Related CN102240987B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110143354.8A CN102240987B (en) 2011-05-30 2011-05-30 Synthesis copper dish abrasive disk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110143354.8A CN102240987B (en) 2011-05-30 2011-05-30 Synthesis copper dish abrasive disk

Publications (2)

Publication Number Publication Date
CN102240987A CN102240987A (en) 2011-11-16
CN102240987B true CN102240987B (en) 2016-06-15

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CN201110143354.8A Expired - Fee Related CN102240987B (en) 2011-05-30 2011-05-30 Synthesis copper dish abrasive disk

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10220486B2 (en) 2014-06-18 2019-03-05 Lens Technology Co., Ltd. Disc containing copper for sapphire polishing, and method for preparing discs containing copper facing each other

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104015122A (en) * 2014-06-18 2014-09-03 蓝思科技股份有限公司 Double-sided copper disc grinding process for sapphire panel
CN108747869B (en) * 2018-05-25 2020-05-12 苏州珂玛材料科技股份有限公司 Polishing disk and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1326383A (en) * 1970-03-16 1973-08-08 Atomic Energy Authority Uk Manufacture of polishing laps
US3868233A (en) * 1973-03-12 1975-02-25 Norton Co Grinding wheel core
GB1441899A (en) * 1974-04-23 1976-07-07 Broido J J G G Grinding and polishing tools
CN101829960A (en) * 2010-04-30 2010-09-15 邬伟光 Diamond resin grinding tool for stones and ceramics
CN101896316A (en) * 2007-12-12 2010-11-24 圣戈班磨料磨具有限公司 Multifunction abrasive tool with hybrid bond

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583236A (en) * 1978-12-20 1980-06-23 Hitachi Ltd Cutting method for semiconductor wafer
US20050023145A1 (en) * 2003-05-07 2005-02-03 Microfabrica Inc. Methods and apparatus for forming multi-layer structures using adhered masks
JP2004090159A (en) * 2002-08-30 2004-03-25 Ube Ind Ltd Heat-resistant resin bond grinding wheel and manufacturing method for it

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1326383A (en) * 1970-03-16 1973-08-08 Atomic Energy Authority Uk Manufacture of polishing laps
US3868233A (en) * 1973-03-12 1975-02-25 Norton Co Grinding wheel core
GB1441899A (en) * 1974-04-23 1976-07-07 Broido J J G G Grinding and polishing tools
CN101896316A (en) * 2007-12-12 2010-11-24 圣戈班磨料磨具有限公司 Multifunction abrasive tool with hybrid bond
CN101829960A (en) * 2010-04-30 2010-09-15 邬伟光 Diamond resin grinding tool for stones and ceramics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10220486B2 (en) 2014-06-18 2019-03-05 Lens Technology Co., Ltd. Disc containing copper for sapphire polishing, and method for preparing discs containing copper facing each other

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Publication number Publication date
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Granted publication date: 20160615

Termination date: 20170530