CN102194744B - Method for manufacturing LED (light emitting diode) wafers with fluorescent powder layer - Google Patents
Method for manufacturing LED (light emitting diode) wafers with fluorescent powder layer Download PDFInfo
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- CN102194744B CN102194744B CN201010147310.8A CN201010147310A CN102194744B CN 102194744 B CN102194744 B CN 102194744B CN 201010147310 A CN201010147310 A CN 201010147310A CN 102194744 B CN102194744 B CN 102194744B
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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Abstract
The invention relates to a method for manufacturing LED (light emitting diode) wafers with a fluorescent powder layer. The method comprises the following steps: providing a substrate which is provided with a plurality of LEDs; forming a plurality of conductive bumps on each LED respectively; forming a fluorescent powder layer covering the substrate; cutting the fluorescent powder layer with a dot-shaped cutting device from one side of the fluorescent powder layer, far away from the substrate, so as to thin the fluorescent powder layer and expose the conductive bumps; and forming a plurality of LED wafers separated from each other and having a fluorescent powder layer. The method for manufacturing LED wafers provided by the invention facilitates the improvement of the color uniformity of light generated by the LED wafers.
Description
Technical field
The present invention relates to a kind of manufacture method of LED wafer, relate in particular to a kind of manufacture method with the LED wafer of phosphor powder layer.
Background technology
Because light-emitting diode has that the life-span is long, volume is little, high vibration strength, the advantage such as heating degree is little and power consumption is low, light-emitting diode has been widely used in indicator light or the light source of household appliances and various instrument.In recent years, light-emitting diode is towards multicolour and high brightness development, so its application has extended to large-scale billboards, traffic lights and association area.In future, light-emitting diode even may become the main lighting source that has power saving and environment-friendly function concurrently.
In the white light emitting diode being widely used in the market, wherein a kind of white light emitting diode is to be combined by blue light-emitting diode wafer and yellow fluorescent powder.Fig. 1 is the profile of existing white light emitting diode.The manufacture method of existing white light emitting diode 100 normally first blue light-emitting diode wafer 110 is disposed to pedestal 120 and routing engages blue light-emitting diode wafer 110 and pedestal 120, afterwards, on pedestal 120, in the mode of a glue, form the yellow fluorescence colloid 130 of a covering blue light-emitting diode wafer 110 and wire W, then, on yellow fluorescence colloid 130, configure lens 140.The gold-tinted that the blue light that white light emitting diode 100 can send by mixing blue light-emitting diode wafer 110 and part blue light illumination produce to the yellow fluorescent powder in yellow fluorescence colloid 130 obtains white light.
Yet, the problem that easily has thickness distribution inequality with the formed yellow fluorescence colloid 130 of mode of a glue, so that affect the uniformity (blue light sending when blue light-emitting diode wafer 110 through the larger part of the thickness of yellow fluorescence colloid 130 time, can produce partially yellow light) of the color of the light that white light emitting diode 100 sends.
Summary of the invention
The invention provides a kind of manufacture method with the LED wafer of phosphor powder layer, can contribute to improve the uniformity of the color of the light that LED wafer produces.
The invention provides a kind of manufacture method with the LED wafer of phosphor powder layer, comprise the following steps: a substrate is provided, on this substrate, there are a plurality of light-emitting diodes.On each light-emitting diode, form respectively a plurality of conductive projections.Form the phosphor powder layer of a covered substrate.A side away from substrate of autofluorescence bisque is with a point-like topping machanism cutting phosphor powder layer, with thinning phosphor powder layer and expose those conductive projections.Form a plurality of separated from one another and there is the LED wafer of phosphor powder layer.
In one embodiment of this invention, point-like topping machanism is a diamond cutting knife.
In one embodiment of this invention, when being also included in diamond cutting knife cutting phosphor powder layer, diamond cutting knife also cuts a top of each conductive projection.
In one embodiment of this invention, after the top with diamond cutting knife cutting phosphor powder layer and each conductive projection, an end face of phosphor powder layer flushes with an end face of each conductive projection.
In one embodiment of this invention, the step of cutting phosphor powder layer comprises with a specific thicknesses cutting phosphor powder layer, and confirm whether those conductive projections expose, if those conductive projections do not expose, adjust thickness of cutting and repeat above-mentioned steps until those conductive projections expose.
In one embodiment of this invention, the step of cutting phosphor powder layer, is with counterclockwise or clockwise direction rotation point-like topping machanism, makes substrate relatively move point-like topping machanism simultaneously.
In one embodiment of this invention, the mode that the method that forms phosphor powder layer comprises turning type casting moulding, compression forming, screen painting, rotary coating, some glue, electrophoresis or spraying forms phosphor powder layer.
In one embodiment of this invention, those light-emitting diodes are formed on substrate.In the present embodiment, form those steps separated from one another and that there is the LED wafer of phosphor powder layer and comprise cutting phosphor powder layer, those light-emitting diodes and substrate.In the present embodiment, with cutter cutting phosphor powder layer, light-emitting diode and substrate or with cutter, cut phosphor powder layer and light-emitting diode and with laser cutting substrate, or cut phosphor powder layer, light-emitting diode and substrate with laser simultaneously.
In one embodiment of this invention, those light-emitting diodes are LED crystal particle, and separated from one another being arranged on substrate, and phosphor powder layer is filled in each intergranule.In the present embodiment, form those steps separated from one another and that there is the LED wafer of phosphor powder layer and comprise cutting phosphor powder layer and substrate.In this embodiment, with cutter cutting phosphor powder layer and substrate or with cutter, cut phosphor powder layer and with laser cutting substrate, or cut phosphor powder layer and substrate with laser simultaneously.
In one embodiment of this invention, form those methods separated from one another and that there is the LED wafer of phosphor powder layer and comprise cutting phosphor powder layer and substrate.In the present embodiment, comprise with cutter cutting phosphor powder layer and cut phosphor powder layer and cut phosphor powder layer and substrate with laser cutting substrate or with laser simultaneously with substrate or with cutter.
In one embodiment of this invention, after point-like topping machanism cutting phosphor powder layer, an end face of phosphor powder layer is one to have the matsurface of regular pattern.
In one embodiment of this invention, after with point-like topping machanism cutting phosphor powder layer, the thickness of phosphor powder layer is essentially certain value.
In one embodiment of this invention, phosphor powder layer is mixed by least one phosphor particles and colloid, and colloid comprises silica gel or epoxy resin.
In one embodiment of this invention, the material of conductive projection comprises gold and alloy thereof.
In one embodiment of this invention, substrate comprises silicon carbide substrate, silicon substrate, sapphire substrate, zinc oxide, GaAs, spinelle or metal substrate.
In one embodiment of this invention, substrate comprises tellite, ceramic substrate, silicon substrate or metal substrate.
Based on above-mentioned, because the present invention is the mode thinning phosphor powder layer with diamond cutting knife cutting phosphor powder layer, therefore, the thickness that covers the phosphor powder layer in LED wafer is quite even, therefore be convertible into through after the phosphor powder layer of even thickness the light that color uniformity is higher when light that the LED wafer of LED wafer is sent.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and be described in detail below by reference to the accompanying drawings.
Accompanying drawing explanation
Fig. 1 is the profile of existing white light emitting diode.
The processing procedure profile of the LED wafer that Fig. 2 A～Fig. 2 E is one embodiment of the invention.
Fig. 3 A～Fig. 3 B is the schematic diagram of the moving direction of diamond cutting knife and the moving direction of semiconductor layer in the diamond cutting knife cutting step of Fig. 2 C, and wherein Fig. 3 A is the top view of diamond cutting knife and semiconductor layer, and Fig. 3 B is the end view of diamond cutting knife and semiconductor layer.
The processing procedure profile of the LED wafer that Fig. 4 A～Fig. 4 E is further embodiment of this invention.
Fig. 5 is the enlarged diagram of LED wafer in Fig. 4 A.
Main element symbol description:
100: white light emitting diode; 110: blue light-emitting diode wafer;
120: pedestal; 130: yellow fluorescence colloid;
140: lens; 200,400: LED wafer;
210: luminescence unit; 212,424: the first type doping semiconductor layers;
214,426: luminescent layer; 216,428: Second-Type doping semiconductor layer;
220: electrode; 230: conductive projection;
232: end; 234: end face;
240,440: phosphor powder layer; 240 ', 440 ': phosphor powder layer;
242,442: a side of phosphor powder layer; 244,444: surface;
250,450: diamond cutting knife; 410: bearing substrate;
420: LED wafer; 422: substrate;
432: the first conductive projections; 432a: first end;
432b: the first end face; 434: the second conductive projections;
434a: the second end; 434b: the second end face;
C: substrate; V: first direction;
G, G1: gap; P1: the first electrode;
P2: the second electrode; R: groove;
S: sidewall; T: thickness;
W: wire.
Embodiment
The processing procedure profile of the LED wafer that Fig. 2 A～Fig. 2 E is one embodiment of the invention.Fig. 3 A～Fig. 3 B is the schematic diagram of the moving direction of diamond cutting knife and the moving direction of semiconductor layer in the diamond cutting knife cutting step of Fig. 2 C, and wherein Fig. 3 A is the top view of diamond cutting knife and semiconductor layer, and Fig. 3 B is the end view of diamond cutting knife and semiconductor layer.
First, please refer to Fig. 2 A, one substrate C is provided, on substrate C, form a plurality of luminescence units 210 of arrayed, each luminescence unit 210 comprises the one first type doping semiconductor layer 212 sequentially stacking, one luminescent layer 214 and a Second-Type doping semiconductor layer 216, wherein luminescent layer 214 is disposed between the first type doping semiconductor layer 212 and Second-Type doping semiconductor layer 216, the material of substrate C can include but not limited to silicon carbide substrate (SiC), silicon substrate (Si), sapphire substrate, zinc oxide (ZnO), GaAs (GaAs), spinelle (MgAl2O4) or metal substrate (being for example copper).Then, on Second-Type doping semiconductor layer 216, form a plurality of electrodes 220.Then, form respectively a plurality of conductive projections (bump) 230 on electrode 220, the material of conductive projection can be for example gold and alloy thereof.
Afterwards, please refer to Fig. 2 B, in the present embodiment, be for example to turn type casting moulding (transfer molding), compression forming (compressing molding), screen painting (screen printing), rotary coating (spin-coating), some glue (dispensing), electrophoresis, spraying (spray coating) or other applicable methods form a phosphor powder layer 240 on Second-Type doping semiconductor layer 216, and phosphor powder layer 240 cover conductive projections 230.Be noted that phosphor powder layer 240 is to be mixed by least one phosphor particles and colloid, colloid can be for example silica gel (silicone or silica gel) or epoxy resin (epoxy resin).
Then, sclerosis (curing) phosphor powder layer 240, then, please refer to Fig. 2 B and Fig. 2 C, the phosphor powder layer 240 ' that a side 242 away from luminescence unit 210 of autofluorescence bisque 240 has been hardened with a diamond cutting knife (not shown) cutting (cutting), with thinning phosphor powder layer 240 ' and expose conductive projection 230, and the conductive projection 230 exposing is conducive to the follow-up routing processing procedure carrying out.Be noted that, whether the process of thinning phosphor powder layer 240 ' is first with a specific thicknesses, to cut phosphor powder layer 240 ', expose afterwards, if conductive projection 230 does not also expose depending on conductive projection 230, little by little increase thickness of cutting, until expose conductive projection 230.
Particularly, referring to Fig. 3 A and Fig. 3 B, the present embodiment is by turning clockwise diamond cutting knife 250 make the mode that the substrate C of tool luminescence unit 210 moves towards a first direction V cut phosphor powder layer 240 ', in other words, diamond cutting knife 250 is when making rotary cutting, and substrate C relatively moves diamond cutting knife 250.The present embodiment does not limit the direction of rotation of diamond cutting knife 250 and the moving direction of luminescence unit 210 and phosphor powder layer 240 ' with this, and the direction of rotation of diamond cutting knife 250 can be to be rotated counterclockwise direction.In the time of diamond cutting knife 250 cutting phosphor powder layer 240 ', diamond cutting knife 250 can cut the end 232 away from luminescence unit 210 of each conductive projection 230 in the lump.
Please refer to Fig. 2 C and Fig. 3 B, in the present embodiment, the end 232 of simultaneously cutting phosphor powder layer 240 ' and each conductive projection 230 due to diamond cutting knife 250, therefore, the surface 244 away from luminescence unit 210 of phosphor powder layer 240 ' flushes with the end face 234 away from luminescence unit 210 of each conductive projection 230.It should be noted that, existing chemical grinding Technology Need lapping liquid (thering is polishing particles) and grinding pad, and on the surface of grinding pad, be covered with polishing particles, therefore in process of lapping, lapping liquid and grinding chip cannot be discharged immediately, but nonhomogeneous hardness is quite large each other due to phosphor powder layer and conductive projection, therefore grind if continue, stays the polishing particles between grinding pad and lapped face and grind chip and can cause the surface of phosphor powder layer and conductive projection to flush.
In addition, in the present embodiment, because diamond cutting knife 250 is flatly to cut phosphor powder layer 240 ', therefore, the thickness T of phosphor powder layer 240 ' is essentially certain value.In the present embodiment, thickness T is about in fact 5um to 40um, and the best is 30um.
Because diamond cutting knife 250 is to cut in rotary manner phosphor powder layer 240 ', and in the process of cutting, the diamond cutting knife head (tip) minimum by volume becomes cut point into line of cut with rotation mode, the last relative motion by substrate and diamond cutting knife again forms cut surface, therefore, the surface 244 of the phosphor powder layer 240 ' being cut by diamond cutting knife 250 can be a matsurface with regular pattern, thus, the light that the LED wafer of the light-emitting diode forming after can helping avoid is sent is 244 generation total reflections on surface, and then the luminous efficiency of lifting light-emitting diode.
Then, please refer to Fig. 2 D, along the clearance G cutting phosphor powder layer 240 ' and luminescence unit 210 and substrate C between conductive projection 230, with the LED wafer 200 that forms a plurality of separated from one another and tool phosphor powder layers (as shown in Figure 2 E, for simplified illustration, Fig. 2 E only illustrates the LED wafer 200 of a tool phosphor powder layer as representative).The quantity that is noted that conductive projection is not limit shown in Fig. 2 E, and the quantity of conductive projection can be single, certainly, can have two above conductive projections yet, when chip area is larger, can have more conductive projection.In the present embodiment, the method of cutting phosphor powder layer 240 ', luminescence unit 210 and substrate C can be optionally and optionally with cutter cutting phosphor powder layer 240 ', luminescence unit 210 and substrate C or with cutter cutting phosphor powder layer 240 ' and luminescence unit 210 and with laser cutting substrate C, certainly, also can use laser cutting phosphor powder layer 240 ', luminescence unit 210 and substrate C simultaneously.
It should be noted that, because the present embodiment is first to form phosphor powder layer 240 ' on luminescence unit 210, again with cutting mode thinning phosphor powder layer 240 ', therefore, can control on the forward light-emitting area that phosphor powder layer is only formed on each luminescence unit, and the thickness that covers the phosphor powder layer 240 ' on each luminescence unit 210 is even haply, therefore can launch the good light of the uniformity through after the phosphor powder layer 240 ' of even thickness when the light that the luminescence unit 210 of tool phosphor powder layer sends.
The processing procedure profile of the LED wafer that Fig. 4 A～Fig. 4 E is further embodiment of this invention.Fig. 5 is the enlarged diagram of LED wafer in Fig. 4 A.
First, referring to Fig. 4 A and Fig. 5, one bearing substrate (submount) 410 and a plurality of LED wafer 420 are provided, and each LED wafer 420 comprises a substrate 422, one first type doping semiconductor layer 424, a luminescent layer 426 and the Second-Type doping semiconductor layer 428 sequentially stacking.Luminescent layer 426 is disposed between the first type doping semiconductor layer 424 and Second-Type doping semiconductor layer 428, in the present embodiment, bearing substrate 410 comprises tellite, ceramic substrate, silicon substrate or metal substrate, and the material of the substrate 422 of each LED wafer 420 can be for example but be not limited to sapphire substrate (sapphire substrate).
Accept above-mentionedly, LED wafer 420 has a recess R, and recess R exposes part the first type doping semiconductor layer 424.Be exposed in recess R and dispose one first electrode P1 on part the first type doping semiconductor layer 424, on Second-Type doping semiconductor layer 428, dispose one second electrode P2, and these LED wafer 420 are disposed on bearing substrate 410.
Then, please refer to Fig. 4 B, on the first electrode P1 of each LED wafer 420 and the second electrode P2, form respectively one first conductive projection 432 and one second conductive projection 434, and the summit of the first conductive projection 432 and the second conductive projection 434 is positioned at sustained height haply.
Then, please refer to Fig. 4 C, in the present embodiment, for example, to turn type casting moulding (transfer molding), compression forming (compressing molding), screen painting (screen printing), rotary coating (spin-coating), some glue (dispensing), electrophoresis, spraying (spray coating) or other applicable methods form a phosphor powder layer 440 on bearing substrate 410, phosphor powder layer 440 covers LED wafer 420, the first conductive projection 432 and the second conductive projections 434 and also inserts in the clearance G 1 between LED wafer 420.Be noted that phosphor powder layer 440 is to be mixed by least one phosphor particles and colloid, colloid can be for example silica gel (silicone or silica gel) or epoxy resin (epoxyresin).
Then, sclerosis (curing) phosphor powder layer 440, then, referring to Fig. 4 C and Fig. 4 D, the phosphor powder layer 440 ' that a side 442 away from bearing substrate 410 of the phosphor powder layer 440 ' of self-hardening has been hardened with diamond cutting knife 450 cutting, with thinning phosphor powder layer 440 ' and expose the first conductive projection 432 and the second conductive projection 434.Specifically, in the present embodiment, in with diamond cutting knife 450 cutting phosphor powder layers 440 ', diamond cutting knife 450 can cut the first end 432a away from bearing substrate 410 of each first conductive projection 432 and the second end 434a away from bearing substrate 410 of each the second conductive projection 434 in the lump.
In the present embodiment, because diamond cutting knife 450 cuts the first end 432a of phosphor powder layer 440 ', each first conductive projection 432 and the second end 434a of each the second conductive projection 434 simultaneously, therefore, the surface 444 away from bearing substrate 410 of phosphor powder layer 440 ' flushes in the one first end face 432b away from bearing substrate 410 of each the first conductive projection 432 and the one second end face 434b away from bearing substrate 410 of each the second conductive projection 434.In the present embodiment, diamond cutting knife 450 is to cut in rotary manner phosphor powder layer 440 ' (being same as the cutting way of Fig. 2 C and Fig. 3 A～Fig. 3 B), therefore, the surface 444 of phosphor powder layer 440 ' (surface of being cut by diamond cutting knife 450) can be a matsurface with regular pattern, thus, the light that the LED wafer of the light-emitting diode forming after can helping avoid is sent is 444 generation total reflections on surface, and then promote the luminous efficiency of light-emitting diode.
Then, can be along the clearance G 1 cutting phosphor powder layer 440 ' and bearing substrate 410 between LED wafer 420, to form a plurality of LED wafer with phosphor powder layer 400 separated from one another (as shown in Figure 4 E, for simplified illustration, Fig. 4 E only illustrates a LED wafer 400 with phosphor powder layer as representative).In the present embodiment, cutting phosphor powder layer 440 ' can optionally and optionally cut phosphor powder layer 440 ' with bearing substrate 410 or with cutter cutting phosphor powder layer 440 ' and with laser cutting bearing substrate 410 with cutter with the method for bearing substrate 410, certainly, also can use laser cutting phosphor powder layer 440 ' and bearing substrate 410 simultaneously.
It should be noted that, due to the present embodiment be form phosphor powder layer in LED wafer after, mode thinning phosphor powder layer 440 ' with cutting, therefore, the thickness that covers the phosphor powder layer 440 ' in LED wafer 420 is quite even, therefore can launch the good light of the uniformity through after the phosphor powder layer 440 ' of even thickness when light that the LED wafer 420 of LED wafer 400 is sent.
In detail, because the present embodiment is that LED wafer is arranged on bearing substrate, so fluorescent material can be filled in the gap between wafer fully, therefore, it is upper that the phosphor powder layer of the present embodiment also can be formed on the sidewall S of LED wafer 420, afterwards again with the mode thinning phosphor powder layer 440 ' of cutting.Therefore the thickness that, the present embodiment can be controlled the phosphor powder layer in the forward light-emitting area of LED wafer is greater than the thickness of phosphor powder layer on LED wafer sidewall S.The light ray energy of sending from sidewall S due to LED wafer 420 a little less than, therefore pass after the phosphor powder layer 440 ' that thickness is less, can avoid in prior art, because wafer sidewall phosphor powder layer is compared with dizzy (yellow-ring) phenomenon of the thick Huang producing, make whole LED wafer can launch the uniformity better and the higher light of brightness.
In sum, in one embodiment, because the present invention is the mode thinning phosphor powder layer with diamond cutting knife cutting phosphor powder layer, therefore, the thickness that covers the phosphor powder layer in LED wafer is quite even, therefore can launch the good light of the uniformity through after the phosphor powder layer of even thickness when light that the LED wafer of LED wafer is sent.In addition, in another embodiment, except above-mentioned advantage, can also control the ratio of forward and sidewall phosphor powder layer thickness, therefore can obtain luminous more uniform LED wafer.Moreover, the surface of being cut by diamond cutting knife due to phosphor powder layer can be the matsurface of a rule, therefore, can help avoid the light that the LED wafer of LED wafer sends and produce total reflection on the surface of phosphor powder layer, and then improve the luminous efficiency of LED wafer.
Although the present invention discloses as above with embodiment; but it is not in order to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; can make appropriate change or be equal to replacement, therefore protection scope of the present invention should be as the criterion with the scope that claims were defined.
Claims (19)
1. a manufacture method with the LED wafer of phosphor powder layer, is characterized in that, comprises the following steps:
One substrate is provided, on described substrate, there are a plurality of light-emitting diodes;
On described a plurality of light-emitting diodes, form respectively a plurality of conductive projections;
Form the phosphor powder layer of the described substrate of a covering;
The side away from described substrate from described phosphor powder layer is cut described phosphor powder layer with a point-like topping machanism, with phosphor powder layer described in thinning and expose described a plurality of conductive projection, after cutting described phosphor powder layer with described point-like topping machanism, an end face of described phosphor powder layer is one to have the matsurface of regular pattern; And
Form a plurality of separated from one another and there is the LED wafer of described phosphor powder layer.
2. the manufacture method with the LED wafer of phosphor powder layer according to claim 1, is characterized in that, described point-like topping machanism is a diamond cutting knife.
3. the manufacture method with the LED wafer of phosphor powder layer according to claim 2, is characterized in that, also comprises:
When cutting described phosphor powder layer with described diamond cutting knife, described diamond cutting knife also cuts a top of conductive projection described in each.
4. the manufacture method with the LED wafer of phosphor powder layer according to claim 3, it is characterized in that, with described diamond cutting knife, cutting described phosphor powder layer and described in each after described top of conductive projection, an end face of described phosphor powder layer flushes with an end face of conductive projection described in each.
5. the manufacture method with the LED wafer of phosphor powder layer according to claim 1, is characterized in that, the step of cutting described phosphor powder layer comprises:
With a specific thicknesses, cut described phosphor powder layer, and confirm whether described a plurality of conductive projection exposes;
And
If described a plurality of conductive projection does not expose, adjust thickness of cutting and repeat above-mentioned steps until described a plurality of conductive projection exposes.
6. the manufacture method with the LED wafer of phosphor powder layer according to claim 1, it is characterized in that, cut the step of described phosphor powder layer, be to rotate described point-like topping machanism with counterclockwise or clockwise direction, make described substrate relatively move described point-like topping machanism simultaneously.
7. the manufacture method with the LED wafer of phosphor powder layer according to claim 1, it is characterized in that, the mode that the method that forms described phosphor powder layer comprises turning type casting moulding, compression forming, screen painting, rotary coating, some glue, electrophoresis or spraying forms described phosphor powder layer.
8. the manufacture method with the LED wafer of phosphor powder layer according to claim 1, it is characterized in that, described a plurality of light-emitting diode is formed on described substrate, forms described a plurality of step separated from one another and that have a LED wafer of described phosphor powder layer and comprises cutting described phosphor powder layer, described a plurality of light-emitting diodes and described substrate.
9. the manufacture method with the LED wafer of phosphor powder layer according to claim 8, it is characterized in that, with cutter, cut described phosphor powder layer, described light-emitting diode and described substrate or cut described phosphor powder layer and described light-emitting diode and cut described substrate with laser with cutter, or cut described phosphor powder layer, described light-emitting diode and described substrate with laser.
10. the manufacture method with the LED wafer of phosphor powder layer according to claim 1, it is characterized in that, described a plurality of light-emitting diode is LED crystal particle, and separated from one another being arranged on described substrate, and described phosphor powder layer is filled in intergranule described in each.
11. manufacture methods with the LED wafer of phosphor powder layer according to claim 10, it is characterized in that, form described a plurality of step separated from one another and that there is the LED wafer of described phosphor powder layer and comprise the described phosphor powder layer of cutting and described substrate.
12. manufacture methods with the LED wafer of phosphor powder layer according to claim 11, it is characterized in that, with cutter, cut described phosphor powder layer and described substrate or cut described phosphor powder layer and cut described substrate with laser with cutter, or cut described phosphor powder layer and described substrate with laser.
13. manufacture methods with the LED wafer of phosphor powder layer according to claim 1, it is characterized in that, form described a plurality of method separated from one another and that there is the LED wafer of described phosphor powder layer and comprise the described phosphor powder layer of cutting and described substrate.
14. manufacture methods with the LED wafer of phosphor powder layer according to claim 13, it is characterized in that, comprise with cutter and cut described phosphor powder layer and described substrate or cut described phosphor powder layer and cut described substrate or cut described phosphor powder layer and described substrate with laser with laser with cutter.
15. manufacture methods with the LED wafer of phosphor powder layer according to claim 1, is characterized in that, after cutting described phosphor powder layer with described point-like topping machanism, the thickness of described phosphor powder layer is certain value.
16. manufacture methods with the LED wafer of phosphor powder layer according to claim 1, is characterized in that, described phosphor powder layer is mixed by least one phosphor particles and colloid, and described colloid comprises silica gel or epoxy resin.
17. manufacture methods with the LED wafer of phosphor powder layer according to claim 1, is characterized in that, the material of described conductive projection comprises gold and alloy thereof.
18. manufacture methods with the LED wafer of phosphor powder layer according to claim 8, it is characterized in that, described substrate comprises silicon carbide substrate, silicon substrate, sapphire substrate, zinc oxide substrate, GaAs substrate, spinelle substrate or metal substrate.
19. manufacture methods with the LED wafer of phosphor powder layer according to claim 10, is characterized in that, described substrate comprises tellite, ceramic substrate, silicon substrate or metal substrate.
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| CN201410137919.5A CN103915381B (en) | 2010-03-18 | 2010-03-18 | The preparation method of LED wafer with phosphor powder layer |
| CN201010147310.8A CN102194744B (en) | 2010-03-18 | 2010-03-18 | Method for manufacturing LED (light emitting diode) wafers with fluorescent powder layer |
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| CN201010147310.8A CN102194744B (en) | 2010-03-18 | 2010-03-18 | Method for manufacturing LED (light emitting diode) wafers with fluorescent powder layer |
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| CN103077951B (en) * | 2013-01-09 | 2016-03-30 | 苏州晶方半导体科技股份有限公司 | The wafer-level packaging method of BSI imageing sensor |
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| 吴佩年等.单点金刚石切削加工表面粗糙度的影响因素分析.《工具技术》.2008,第42卷(第8期),30-32. |
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