CN102130287A - Light-emitting diode (LED) device with electrostatic damage protection function and manufacturing method thereof - Google Patents
Light-emitting diode (LED) device with electrostatic damage protection function and manufacturing method thereof Download PDFInfo
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- CN102130287A CN102130287A CN2010106006836A CN201010600683A CN102130287A CN 102130287 A CN102130287 A CN 102130287A CN 2010106006836 A CN2010106006836 A CN 2010106006836A CN 201010600683 A CN201010600683 A CN 201010600683A CN 102130287 A CN102130287 A CN 102130287A
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- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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Abstract
The invention relates to a light-emitting diode (LED) device with an electrostatic damage protection function, comprising an LED chip and an inverse substrate. The LED chip comprises a luminous zone and an electrostatic protection area, wherein the luminous area comprises an LED, the electrostatic protection area comprises at least two electrostatic protection diodes, and the LED and the two electrostatic protection diodes are mutually isolated through an isolation groove. The inverse substrate comprises a surface-isolation basement and a metal wire layer covered on the surface of the basement. The LED chip is inversely arranged on the inverse substrate, and the electrostatic protection diodes are connected in series and then are inversely connected with the LED in parallel through the metal wire layer on the inverse substrate. The LED device provided by the invention has a favorable anti-ESD (Electric Static Discharge) property, and can be used for carrying out a reverse leakage current test so as to discriminate defective products and prevent problem on long-term reliability.
Description
Technical field
The invention belongs to the manufacturing field of luminescent device, relate to a kind of luminescent device and manufacture method thereof with static damage protective function.
Background technology
Along with improving constantly of LED light efficiency,,, manifest the trend that LED replaces fluorescent lamp, incandescent lamp gradually as LCD backlight, automotive lighting light source etc. in some field.In the general illumination field, great power LED has the great potential that replaces conventional light source too.But along with the increase of led chip unit are power and the raising of chip integration, heat dissipation problem and electrostatic defending problem become the key factor that influences LED stability gradually.
Wherein, improving antistatic capacity is the important requirement that improves LED stability.At present, the general anti-static ability of improving LED for a LED backward diode in parallel or bidirectional diode that adopts.For positive cartridge chip or vertical stratification chip, generally adopt, but this method has increased production cost, and influenced the stability of product because of the increase that connects gold thread an antistatic diode and the method that LED is packaged together.
Flip-chip generally adopts silicon chip to be used as flip-chip substrate.Silicon circuit integrated technique maturation, easily by technologies such as doping cheaply at silicon internal production antistatic diode.See also Figure 1A, Chinese invention patent CN100386891C discloses a kind of high anti-static high efficiency light-emitting diode, it comprises substrate 10 and the light-emitting diode chip for backlight unit 20 that utilizes a conductive-type semiconductor material, be manufactured with integrated bi-directional voltage stabilizing diode 11 on the substrate 10, light-emitting diode chip for backlight unit 20 mainly comprises a transparent sapphire substrate 21 and the GaN structure sheaf 22 on this substrate and P electrode 23, N electrode 24, with light-emitting diode chip for backlight unit 20 upside-down mountings on this substrate 10.Because integrated antistatic protection bi-directional voltage stabilizing diode 11 has effectively strengthened the light-emitting diode anti-static-discharge capability on the substrate 10, can realize high-power output, reduces cost, and improves effects such as device reliability.See also Figure 1B, it is the equivalent circuit diagram of structure shown in Figure 1.Though this light emitting diode construction has esd protection function preferably, but still has defective.See also Fig. 1 C, it is the equivalent circuit diagram of structure series mould set chip shown in Figure 1.Because n-Si has conductivity preferably, when adopting this method to realize the series mould set chip on same silicon chip substrate, the n utmost point that can have all esd protection diodes is by silicon substrate problem altogether.When the series connection chip more than some, required driving voltage is during greater than the reverse breakdown voltage of single antistatic diode, the antistatic diode 31 of series connection negative terminal may reverse breakdown, and with voltage clamp in its puncture voltage, influenced the driven of module chip.Therefore this inverted structure and be not suitable for being used for making module chip.
In addition, disclose on same Sapphire Substrate among the U.S. patent of invention US6547249B2, made two reverse parallel connection LED, just can play the effect of electrostatic protection between two diodes mutually.Adopt the method for single backward diode in parallel, increase under the prerequisite of a small amount of manufacturing cost, improved the anti-static-discharge capability of LED, but there is certain problem in this structure in sample test.The LED reverse leakage current is an importance of reflection LED performance, does not screen the bigger defective products of reverse leakage if reverse leakage is not tested, and defective products may reliability go wrong in long-term the use.The test voltage of reverse leakage current is generally than forward cut-in voltage height.Sow basic LED as nitrogenize, the general reverse voltage that applies 5V at the LED two ends is tested its reverse current.For with the diode of LED reverse parallel connection, the 5V voltage that applies then is forward voltage.The operating voltage of general gallium nitride based LED is less than 3.5V, and when testing so, backward diode must be in the forward conduction state, therefore can't test the reverse leakage current of LED.
Summary of the invention
The objective of the invention is to overcome shortcoming of the prior art with not enough, provide a kind of and have good anti-ESD function, and can carry out the LED light-emitting diode of reverse voltage test.
Simultaneously, the present invention also provides described manufacturing method for LED.
A kind of LED device with static damage protective function comprises light-emitting diode chip for backlight unit and flip-chip substrate.This light-emitting diode chip for backlight unit comprises a luminous zone and an electrostatic defending district, wherein, this luminous zone comprises a light-emitting diode, and this electrostatic defending district comprises at least two electrostatic defending diodes, and this light-emitting diode and electrostatic defending diode are isolated mutually by isolation channel.This flip-chip substrate comprises the substrate of a surface insulation, and covers the metal line layer on the substrate surface.This light-emitting diode chip for backlight unit upside-down mounting on this flip-chip substrate, by the metal line layer on this flip-chip substrate, this electrostatic defending diode serial connection then with this light-emitting diode reverse parallel connection.
A kind of manufacture method with LED device of static damage protective function comprises step
Step S1: deposit n type semiconductor layer, active layer and p type semiconductor layer in regular turn at substrate surface;
Step S2: form isolation channel at substrate surface, the n type semiconductor layer that this deposits in regular turn, active layer and p type semiconductor layer are divided into several separate units by this isolation channel;
Step S3: the p type semiconductor layer and the active layer of the subregion on each separate unit of etching make the n type semiconductor layer of this subregion expose;
Step S4: formation electrode layer on the surface of n type semiconductor layer that exposes and p type semiconductor layer;
Step S5: in substrate, form a metal line layer and salient point soldered ball in regular turn, thereby form flip-chip substrate;
Step S6: on flip-chip substrate, the electrode of light emitting diode layer is connected with salient point soldered ball on the flip-chip substrate light-emitting diode chip for backlight unit upside-down mounting.
With respect to prior art, LED device of the present invention not only has good antistatic effect, can reduce the probability that LED is subjected to environment or circuit electrostatic damage in production flow process and terminal applies life cycle; Can carry out integrated with existing technology easily and can not increase more manufacturing cost; Also can monitor LED reverse leakage situation according to routine, screening falls to have the product of potential problems, improves the reliability of product.
In order to understand the present invention more clearly, set forth the specific embodiment of the present invention below with reference to description of drawings.
Description of drawings
Figure 1A is the structural representation of prior art LED device.
Figure 1B is the equivalent circuit diagram of structure shown in Figure 1.
Fig. 1 C is the equivalent circuit diagram of structure series mould set chip shown in Figure 1.
Fig. 2 is the cross-sectional view of the embodiment one of the LED device of the present invention with static damage protective function.
Fig. 3 is the upward view of light-emitting diode chip for backlight unit 100 shown in Figure 2.
Fig. 4 is the vertical view of flip-chip substrate 200 shown in Figure 2.
Fig. 5 is the equivalent circuit diagram of structure shown in Figure 2.
Fig. 6 A-6F is the structural representation of each key step of the manufacture method of LED device shown in Figure 2.
Fig. 7 is the cross-sectional view of the embodiment two of the LED device of the present invention with static damage protective function.
Embodiment
Embodiment one
Please consult Fig. 2 simultaneously, it is the cross-sectional view of the embodiment one of the LED device of the present invention with static damage protective function.This LED device comprises a light-emitting diode chip for backlight unit 100 and flip-chip substrate 200.These light-emitting diode chip for backlight unit 100 upside-down mountings are on this flip-chip substrate 200.
Please consult Fig. 3 simultaneously, it is the upward view of light-emitting diode chip for backlight unit 100 shown in Figure 1.This light-emitting diode chip for backlight unit 100 comprises a luminous zone A and an electrostatic defending district B, wherein, this luminous zone A comprises a light-emitting diode, and this electrostatic defending district B comprises three electrostatic defending diodes, and this luminous zone A area occupied is greater than 50% of this light-emitting diode chip for backlight unit gross area.
Further, this light-emitting diode chip for backlight unit 100 comprises a substrate 101, a n type semiconductor layer 102, an active layer 103, a p type semiconductor layer 104, a passivation layer 105, an electrode layer 106, and isolation channel 107, this electrode layer 106 comprises n type electrode layer 106a and p type electrode layer 106b.Wherein, this n type semiconductor layer 102 covers this substrate 101 surfaces, and is divided into four separate unit by isolation channel 107 isolation, and wherein correspondence comprises a light emitting diode and three electrostatic defending diodes.This active layer 103 covers the part surface of the n type semiconductor layer 102 of light emitting diode and electrostatic defending diode, and part n type semiconductor layer 102 is exposed.This p type semiconductor layer 104 covers this active layer 103 surfaces.This passivation layer 105 covers the n type semiconductor layer 102 that exposes of part and the surface of p type semiconductor layer 104, makes mutually insulated between each n type semiconductor layer 102 and the p type semiconductor layer 104.This n type electrode layer 106a covers n type semiconductor layer 102 surfaces of exposing between the passivation layer 105, and this p type electrode layer 106b covers p type semiconductor layer 104 surfaces of exposing between the passivation layer 105.Thereby on this substrate 101, form a light-emitting diode and three electrostatic defending diodes.
See also Fig. 4, it is the planar structure schematic diagram of flip-chip substrate 200.This flip-chip substrate 200 comprises a substrate 201, an insulating barrier 202, a metal line layer 203 and salient point soldered ball 204.This insulating barrier 202 covers the surface of this substrate 201, and this metal line layer 203 covers this surface of insulating layer, and forms a conductive pattern.This salient point soldered ball 204 is arranged on the surface of metal line layer 203, as with the tie point of the electrode layer 106 of light-emitting diode chip for backlight unit 100.Please consult Fig. 5 simultaneously, it is the equivalent circuit diagram of structure shown in Figure 1.These light-emitting diode chip for backlight unit 100 upside-down mountings are on this flip-chip substrate 200, the light-emitting diode of this light-emitting diode chip for backlight unit 100 and electrostatic defending diode are realized being electrically connected by the metal line layer on this flip-chip substrate 200 203, particularly, these three electrostatic defending diode serial connections, the n utmost point of this light-emitting diode is connected with the electrostatic defending diode p utmost point of these three serial connections, the p utmost point of this light-emitting diode is connected with the electrostatic defending diode n utmost point of these three serial connections, thereby the electrostatic defending diode that three of this light-emitting diode and these are connected in series forms reverse parallel connection.
This substrate 101 is specially sapphire (Al
2O
3) substrate.
This substrate 201 is specially has the substrate that the thermal conductive resin material is made, as silicon substrate, metal substrate etc.
The material of this salient point soldered ball 204 is the multilayer material or the alloy of single metal material such as lead, tin, gold, silver or copper or above-mentioned material.
See also Fig. 6 A to Fig. 6 F, it is the structural representation of each key step of the manufacture method of LED device of the present invention.The step of manufacturing of this luminescent device is specific as follows:
Step S1: deposit n type semiconductor layer 102, active layer 103 and p type semiconductor layer 104 in regular turn on substrate 101 surfaces.See also Fig. 6 A, particularly, by epitaxy technique successively in substrate 101 surface deposition n type semiconductor layer 102, active layer 103, p type semiconductor layer 104.The n type semiconductor layer comprises that in regular turn resilient coating is sowed in the low temperature nitrogenize, layer is sowed in the nitrogenize of not mixing, layer is sowed in the nitrogenize of n type (figure does not show).Active layer 203 is multi layer quantum well layer (MQW).P type semiconductor layer 204 comprises that in regular turn p type aluminium nitride is sowed layer and layer (figure does not show) is sowed in the nitrogenize of p type.
Step S2: form isolation channel 107.See also Fig. 6 B, particularly, provide first mask (figure does not show) that adopts silicon dioxide or metallic film to make above substrate 101, this mask has slot.Adopt dry etching or wet etching then, in the aperture of mask the p type semiconductor layer 102 on the substrate 101, active layer 103 and n type semiconductor layer 104 are carried out etching and expose, thereby form isolation channel 107 until substrate 101.And this substrate isolation is divided into four separate unit by isolation channel 107, wherein correspondence comprises a light emitting diode and three electrostatic defending diodes.
Step S3: etching part p type semiconductor layer 104 and active layer 103 make part n type semiconductor layer 102 expose.See also Fig. 6 C, particularly, provide one second mask (figure does not show) above substrate 101, this mask exposes the part p type semiconductor layer 104 of light emitting diode and three electrostatic defending diodes.Adopt dry etching or wet etching then, mask not covering place the p type semiconductor layer 104 on the substrate 101 and active layer 103 carried out etching expose until n type semiconductor layer 102.
Step S4: form passivation layer 105.See also Fig. 6 D, form passivation layers 105 on this p type semiconductor layer 104 and n type semiconductor layer 102 surfaces of exposing.The material of this passivation layer 105 is silicon dioxide or alchlor or silicon nitride or thin polymer film etc.And then adopting dry etching or wet etching on the passivation layer 105 of light emitting diode and three electrostatic defending diodes, to etch n utmost point window and p utmost point window, this n type semiconductor layer 102 and p type semiconductor layer 104 expose at n utmost point window and p utmost point window portion respectively.
Step S5: form electrode layer 106.See also Fig. 6 E, particularly, adopt Film forming method on n utmost point window and p utmost point window, to form n type electrode layer 106a and p type electrode layer 106b successively respectively respectively.The material of this electrode layer 106 is the multilayer material or the alloy of single metal material such as lead, tin, gold, silver or copper or above-mentioned material.
Step S6: in substrate 201, form an insulating barrier 202, a metal line layer 203 and salient point soldered ball 204 in regular turn, thereby form flip-chip substrate 200.
Step S7: with light-emitting diode chip for backlight unit 100 upside-down mountings on flip-chip substrate 200.See also Fig. 6 F, on flip-chip substrate 200, the electrode layer 106 of light-emitting diode chip for backlight unit 100 is connected with salient point soldered ball 204 on the flip-chip substrate 200 light-emitting diode chip for backlight unit 100 upside-down mountings.
Embodiment two
See also Fig. 7, it is the cross-sectional view of the embodiment two of the LED device of the present invention with static damage protective function.This LED device comprises a light-emitting diode chip for backlight unit 100 and flip-chip substrate 200.These light-emitting diode chip for backlight unit 100 upside-down mountings are on this flip-chip substrate 200.
Further, this light-emitting diode chip for backlight unit 100 comprises a substrate 101, a n type semiconductor layer 102, an active layer 103, a p type semiconductor layer 104, an electrode layer 106, and isolation channel 107, this electrode layer 106 comprises n type electrode layer 106a and p type electrode layer 106b.Wherein, this n type semiconductor layer 102 covers this substrate 101 surfaces, and is divided into four separate unit by isolation channel 107 isolation, and wherein correspondence comprises a light emitting diode and three electrostatic defending diodes.This active layer 103 covers the part surface of the n type semiconductor layer 102 of light emitting diode and electrostatic defending diode, and part n type semiconductor layer 102 is exposed.This p type semiconductor layer 104 covers this active layer 103 surfaces.This n type electrode layer 106a covers the part surface of the n type semiconductor layer 102 that exposes, and this p type electrode layer 106b covers the part surface of p type semiconductor layer 104.Thereby on this substrate 101, form a light-emitting diode and three electrostatic defending diodes.
Flip-chip substrate 200 comprises a substrate 201, a metal line layer 203 and salient point soldered ball 204.This substrate 201 is specially the substrate that insulating material with thermal conductive resin is made, and as ceramic substrate etc., so substrate surface need not to cover insulating barrier and realizes insulation.
The difference of present embodiment and embodiment one is: do not form passivation layer between n type semiconductor layer and the p type semiconductor layer, n type electrode layer and p type electrode layer are only realized the insulation isolation by isolation channel 107.Therefore can omit step of manufacturing S4 among the embodiment one.And the substrate 201 of flip-chip substrate 200 adopts insulating material to make, and omitted the manufacturing step that forms insulating barrier at substrate surface.
With respect to prior art, LED device of the present invention not only has good antistatic effect, can reduce the probability that LED is subjected to environment or circuit electrostatic damage in production flow process and terminal applies life cycle; Can carry out integrated with existing technology easily and can not increase more manufacturing cost; Also can monitor LED reverse leakage situation according to routine, screening falls to have the product of potential problems, improves the reliability of product.
The present invention is not limited to above-mentioned execution mode, if various changes of the present invention or distortion are not broken away from the spirit and scope of the present invention, if these changes and distortion belong within claim of the present invention and the equivalent technologies scope, then the present invention also is intended to comprise these changes and distortion.
Claims (13)
1. the LED device with static damage protective function is characterized in that: comprise
Light-emitting diode chip for backlight unit, it comprises a luminous zone and an electrostatic defending district, and wherein, this luminous zone comprises a light-emitting diode, this electrostatic defending district comprises at least two electrostatic defending diodes, and this light-emitting diode and electrostatic defending diode are isolated mutually by isolation channel;
Flip-chip substrate, it comprises the substrate of a surface insulation, and covers the metal line layer on the substrate surface;
This light-emitting diode chip for backlight unit upside-down mounting on this flip-chip substrate, by the metal line layer on this flip-chip substrate, this electrostatic defending diode serial connection then with this light-emitting diode reverse parallel connection.
2. LED device according to claim 1 is characterized in that: this luminous zone area occupied is greater than 50% of this light-emitting diode chip for backlight unit gross area.
3. LED device according to claim 1 is characterized in that: have three electrostatic defending diodes on this light-emitting diode chip for backlight unit.
4. LED device according to claim 1 is characterized in that: the substrate of this flip-chip substrate is that ceramic substrate, surface coverage have the silicon substrate of insulating barrier or the metal substrate that surface coverage has insulating barrier.
5. LED device according to claim 1 is characterized in that: this light-emitting diode and electrostatic defending diode comprise n type semiconductor layer, active layer and p type semiconductor layer; Wherein this n type semiconductor layer covers the substrate surface of this light-emitting diode chip for backlight unit, and this active layer covers the part surface of n type semiconductor layer, and part n type semiconductor layer is exposed, and this p type semiconductor layer covers this active layer surface.
6. LED device according to claim 5, it is characterized in that: this light-emitting diode and electrostatic defending diode further comprise passivation layer and electrode layer, this passivation layer covers the n type semiconductor layer that exposes of part and the surface of p type semiconductor layer, makes mutually insulated between n type semiconductor layer and the p type semiconductor layer; This electrode layer covers n type semiconductor layer and the p N-type semiconductor N laminar surface that exposes between the passivation layer.
7. LED device according to claim 1 is characterized in that: this flip-chip substrate comprises the salient point soldered ball that is arranged on the metal line layer, and this light-emitting diode chip for backlight unit upside-down mounting makes electrode layer be connected with the salient point soldered ball on this flip-chip substrate.
8. the manufacture method with LED device of static damage protective function is characterized in that: comprise step step S1: deposit n type semiconductor layer, active layer and p type semiconductor layer in regular turn at substrate surface;
Step S2: form isolation channel at substrate surface, the n type semiconductor layer that this deposits in regular turn, active layer and p type semiconductor layer are divided into several separate units by this isolation channel;
Step S3: the p type semiconductor layer and the active layer of the subregion on each separate unit of etching make the n type semiconductor layer of this subregion expose;
Step S4: formation electrode layer on the surface of n type semiconductor layer that exposes and p type semiconductor layer;
Step S5: in substrate, form a metal line layer and salient point soldered ball in regular turn, thereby form flip-chip substrate;
Step S6: on flip-chip substrate, the electrode of light emitting diode layer is connected with salient point soldered ball on the flip-chip substrate light-emitting diode chip for backlight unit upside-down mounting.
9. manufacture method according to claim 8, it is characterized in that: after step S3, also comprise step S31: form passivation layer, this passivation layer covers the n type semiconductor layer that exposes of part and the surface of p type semiconductor layer, makes mutually insulated between each n type semiconductor layer and the p type semiconductor layer; Step S4 is the formation electrode layer that exposes the surface of n type semiconductor layer and p type semiconductor layer between passivation layer.
10. manufacture method according to claim 8, it is characterized in that: step S5 also comprises: form insulating barrier in substrate, form metal line layer and salient point soldered ball in regular turn at surface of insulating layer then, thereby form flip-chip substrate.
11. manufacture method according to claim 8 is characterized in that: step S2 is specially provides first mask that adopts silicon dioxide or metallic film to make above substrate, this mask has slot; Adopt dry etching or wet etching then, in the aperture of mask the p type semiconductor layer on the substrate, active layer and n type semiconductor layer are carried out etching and expose, thereby form isolation channel until substrate.
12. manufacture method according to claim 8, it is characterized in that: step S3 is specially one second mask is provided above substrate, this mask exposes the part p type semiconductor layer of light emitting diode and three electrostatic defending diodes, adopt dry etching or wet etching then, in the aperture of mask the p type semiconductor layer on the substrate and active layer are carried out etching and expose until the n type semiconductor layer.
13. manufacture method according to claim 9, it is characterized in that: step S31 is specially at this p type semiconductor layer and the n N-type semiconductor N laminar surface that exposes and forms a passivation layer, and then adopt dry etching or wet etching on the passivation layer of each separate unit, to etch n utmost point window and p utmost point window, this n type semiconductor layer and p type semiconductor layer expose at n utmost point window and p utmost point window portion respectively, and the electrode layer of step S4 is arranged on n type semiconductor layer and the p N-type semiconductor N laminar surface that exposes in this n utmost point window and the p utmost point window.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010106006836A CN102130287A (en) | 2010-12-22 | 2010-12-22 | Light-emitting diode (LED) device with electrostatic damage protection function and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106006836A CN102130287A (en) | 2010-12-22 | 2010-12-22 | Light-emitting diode (LED) device with electrostatic damage protection function and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322082A (en) * | 2014-07-31 | 2016-02-10 | 首尔伟傲世有限公司 | Light emitting diode and light emitting device |
| CN106981563A (en) * | 2017-05-16 | 2017-07-25 | 广东工业大学 | A kind of power-type uv-LED device |
| US9941455B2 (en) | 2014-06-03 | 2018-04-10 | Seoul Viosys Co., Ltd. | Light emitting diode and light emitting device including the same |
| CN108649047A (en) * | 2013-07-10 | 2018-10-12 | 首尔伟傲世有限公司 | Flip chip type light-emitting diode chip for backlight unit |
| WO2019100992A1 (en) * | 2017-11-22 | 2019-05-31 | 厦门市三安光电科技有限公司 | Led light emitting device |
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| WO2007126282A1 (en) * | 2006-04-28 | 2007-11-08 | Epivalley Co., Ltd. | Iii-nitride semiconductor light emitting device |
| US20100019264A1 (en) * | 2008-07-24 | 2010-01-28 | Hwan Hee Jeong | Semiconductor light emitting device |
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| WO2005124880A1 (en) * | 2004-03-13 | 2005-12-29 | Epivalley Co., Ltd. | Iii-nitride light emitting diode and method of manufacturing it |
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| US20060060880A1 (en) * | 2004-09-17 | 2006-03-23 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device having electrostatic discharge(ESD) protection capacity |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108649047A (en) * | 2013-07-10 | 2018-10-12 | 首尔伟傲世有限公司 | Flip chip type light-emitting diode chip for backlight unit |
| US9941455B2 (en) | 2014-06-03 | 2018-04-10 | Seoul Viosys Co., Ltd. | Light emitting diode and light emitting device including the same |
| CN105322082A (en) * | 2014-07-31 | 2016-02-10 | 首尔伟傲世有限公司 | Light emitting diode and light emitting device |
| CN105322082B (en) * | 2014-07-31 | 2019-04-09 | 首尔伟傲世有限公司 | Light-emitting diode chip for backlight unit and light emitting device |
| CN106981563A (en) * | 2017-05-16 | 2017-07-25 | 广东工业大学 | A kind of power-type uv-LED device |
| CN106981563B (en) * | 2017-05-16 | 2023-11-14 | 广东工业大学 | Power type ultraviolet LED device |
| WO2019100992A1 (en) * | 2017-11-22 | 2019-05-31 | 厦门市三安光电科技有限公司 | Led light emitting device |
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Application publication date: 20110720 |