CN102130215A - Production process of high-efficiency solar cell - Google Patents
Production process of high-efficiency solar cell Download PDFInfo
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- CN102130215A CN102130215A CN2010106213253A CN201010621325A CN102130215A CN 102130215 A CN102130215 A CN 102130215A CN 2010106213253 A CN2010106213253 A CN 2010106213253A CN 201010621325 A CN201010621325 A CN 201010621325A CN 102130215 A CN102130215 A CN 102130215A
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- silicon chip
- solar batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a production process of a high-efficiency solar cell, comprising the following steps of: texturing on the surface of a silicon chip; diffusing; removing PSG (Phosphosilicate Glass) and etching sides; carrying out surface passivation on an antireflection coating; carrying out surface masking and pattern etching; carrying out screen printing on a back electrode and a back electrical field; sintering the back sides of the back electrode and the back electrical field; and producing a positive electrode by an electroplating method. The production process is simple and easy to integrate, cannot pollute the environment and is suitable for industrial application; and in addition, the cell efficiency of the solar cell is improved and the goal of obtaining the solar cell with high efficiency and low cost is achieved.
Description
Technical field
The present invention relates to a kind of manufacturing process of solar cell, especially a kind of manufacturing process of high performance solar batteries.
Background technology
The square resistance that improves diffusion technology is one of method that increases solar battery efficiency, the increase of side's resistance has lifting to the surface passivation effect of solar cell, the short wave response of battery also can increase, but when side's resistance improves, the series resistance of battery (Rs) also can increase, and causes N type laminar surface concentration to reduce because the resistance of diffusion side increases, and the Ag-Si contact resistance increases, the increase of Rs can cause fill factor, curve factor (FF) to descend, and finally causes loss in efficiency;
If can guarantee that Rs does not increase under the prerequisite that improves the resistance of diffusion side, the efficient of solar cell will have tangible lifting so;
In traditional silk screen printing silver electrode technology, the main component Ag of electrode need be dissolved in to form slurry in the vitreum, behind sintering process, has the existence of vitreum (SIO2) at the interface like this, causes the Ag-Si contact resistance to rise; If can just can reach the purpose that reduces contact resistance vitreum from removing at the interface.
Summary of the invention
The technical problem to be solved in the present invention is: propose a kind of efficient that can promote solar cell, technology is simple, is easy to integratedly, also can not pollute the manufacturing process of the high performance solar batteries that is suitable for commercial application to environment.
The technical solution adopted in the present invention is: a kind of manufacturing process of high performance solar batteries has following steps:
1), and spreads in silicon chip surface making herbs into wool;
2) remove surperficial phosphorosilicate glass PSG, carve the limit;
3) silicon chip surface prepares passivated reflection reducing membrane;
4) carry out mask at silicon chip surface, on mask layer, etch the positive electrode figure behind the formation mask layer;
5) silk screen printing back electrode and the back of the body electric field, back side sintering then;
6) adopt electric plating method to prepare front electrode, used plated metal is Ni-Ag or Ni-Cu-Ag.
Specifically, the square resistance scope of the diffusion technology in the step 1) of the present invention is 40～120ohm/sq, and surperficial mask adopts silicon dioxide or silicon nitride in the described step 4), and the resistivity of described silicon chip is 0.2～30 Ω cm.
The invention has the beneficial effects as follows: (1) adopts electroplating technology to prepare positive electrode, can reduce Rs, promotes battery efficiency, and electroplating technology is self-registered technology, does not have the print register problem; (2) adopt the method for surperficial mask to make the positive electrode figure, technology is simple, and mask layer can also play the effect of surface passivation simultaneously, and this also can cause the lifting of battery efficiency; (3) adopt electroplated electrode technology, promoted short circuit current (Isc), reduced series resistance (Rs), implementation efficiency promotes; (4) integrated silk-screen printing technique and electroplating technology, made it when guaranteeing that battery efficiency promotes, more to adapt to the industrialization demand; By above 4 effect, the battery efficiency of solar cell is promoted, reach the target of high-efficiency low-cost solar battery.
Embodiment
The present invention is further detailed explanation in conjunction with the embodiments now.These only illustrate basic structure of the present invention in a schematic way, so it only shows the formation relevant with the present invention.
1), and spreads (diffusion side resistance for 80ohm/sq) in silicon chip surface making herbs into wool (alkali making herbs into wool);
2) remove surperficial phosphorosilicate glass PSG, carve the limit;
3) silicon chip surface prepares passivated reflection reducing membrane (SIN silicon nitride film, thickness are 30～50nm, and refractive index is 2.15);
4) (the PECVD mode deposits SIO2, and thickness is 35～55nm to carry out mask at silicon chip surface; Or the PECVD mode deposits SIN, and thickness is 35～55nm), adopts silk-screen printing technique to etch the positive electrode figure on mask layer after forming mask layer;
5) silk screen printing back electrode and the back of the body electric field, back side sintering then;
6) adopt electric plating method to prepare front electrode, used plated metal is Ni-Ag, and width is 30 μ m, highly is 15 μ m.
Adopt the test result of battery under the IEC60904 testing standard of this prepared as follows:
| Voc(mV) | Jsc(mA/c?m 2) | FF(％) | Eff.(％) | |
| The SIO2 mask | 638 | 37.69 | 79.47 | 18.89％ |
| The SIN mask | 640 | 37.53 | 79.36 | 18.91％ |
Just the specific embodiment of the present invention of describing in the above specification, various not illustrating is construed as limiting flesh and blood of the present invention, the person of an ordinary skill in the technical field after having read specification can to before described embodiment make an amendment or be out of shape, and do not deviate from essence of an invention and scope.
Claims (5)
1. the manufacturing process of a high performance solar batteries is characterized in that having following steps:
1), and spreads in silicon chip surface making herbs into wool;
2) remove surperficial phosphorosilicate glass PSG, carve the limit;
3) silicon chip surface passivated reflection reducing membrane;
4) carry out mask at silicon chip surface, adopt screen printing technique etching positive electrode figure on mask layer behind the formation mask layer;
5) silk screen printing back electrode and the back of the body electric field, back side sintering then;
6) adopt electric plating method to prepare front electrode, used plated metal is Ni-Ag or Ni-Cu-Ag.
2. the manufacturing process of high performance solar batteries as claimed in claim 1, it is characterized in that: the square resistance scope of the diffusion technology in the described step 1) is 40～120ohm/sq.
3. the manufacturing process of high performance solar batteries as claimed in claim 1 is characterized in that: surperficial mask adopts silicon dioxide in the described step 4), and thickness is 35～55nm.
4. the manufacturing process of high performance solar batteries as claimed in claim 1 is characterized in that: surperficial mask employing silicon nitride in the described step 4), thickness 35～55nm.
5. the manufacturing process of high performance solar batteries as claimed in claim 1, it is characterized in that: the resistivity of described silicon chip is 0.2～30 Ω cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106213253A CN102130215A (en) | 2010-12-31 | 2010-12-31 | Production process of high-efficiency solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106213253A CN102130215A (en) | 2010-12-31 | 2010-12-31 | Production process of high-efficiency solar cell |
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| CN102130215A true CN102130215A (en) | 2011-07-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010106213253A Pending CN102130215A (en) | 2010-12-31 | 2010-12-31 | Production process of high-efficiency solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103484902A (en) * | 2012-04-04 | 2014-01-01 | 罗门哈斯电子材料有限公司 | Metal plating for ph sensitive applications |
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| CN101582467A (en) * | 2009-04-02 | 2009-11-18 | 常州天合光能有限公司 | Method for grooving and grid burying of crystalline silicon solar cell |
| CN101630703A (en) * | 2008-07-02 | 2010-01-20 | 罗门哈斯电子材料有限公司 | Method of light induced plating on semiconductors |
| CN101764179A (en) * | 2009-12-31 | 2010-06-30 | 中山大学 | Manufacture method of selective front surface field N-type solar cell |
| CN101826573A (en) * | 2009-12-25 | 2010-09-08 | 欧贝黎新能源科技股份有限公司 | Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery |
| CN101859720A (en) * | 2010-04-15 | 2010-10-13 | 中山大学 | Method for measuring surface contact resistivity of crystalline silicon solar battery |
| CN101894872A (en) * | 2009-12-25 | 2010-11-24 | 欧贝黎新能源科技股份有限公司 | Fine electrode crystalline silicon solar battery and preparation method thereof |
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2010
- 2010-12-31 CN CN2010106213253A patent/CN102130215A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630703A (en) * | 2008-07-02 | 2010-01-20 | 罗门哈斯电子材料有限公司 | Method of light induced plating on semiconductors |
| CN101582467A (en) * | 2009-04-02 | 2009-11-18 | 常州天合光能有限公司 | Method for grooving and grid burying of crystalline silicon solar cell |
| CN101826573A (en) * | 2009-12-25 | 2010-09-08 | 欧贝黎新能源科技股份有限公司 | Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery |
| CN101894872A (en) * | 2009-12-25 | 2010-11-24 | 欧贝黎新能源科技股份有限公司 | Fine electrode crystalline silicon solar battery and preparation method thereof |
| CN101764179A (en) * | 2009-12-31 | 2010-06-30 | 中山大学 | Manufacture method of selective front surface field N-type solar cell |
| CN101859720A (en) * | 2010-04-15 | 2010-10-13 | 中山大学 | Method for measuring surface contact resistivity of crystalline silicon solar battery |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103484902A (en) * | 2012-04-04 | 2014-01-01 | 罗门哈斯电子材料有限公司 | Metal plating for ph sensitive applications |
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Application publication date: 20110720 |