CN102114617B - Ti3SiC2-based ceramic bonding agent diamond grinding tool and preparation method thereof - Google Patents
Ti3SiC2-based ceramic bonding agent diamond grinding tool and preparation method thereof Download PDFInfo
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- CN102114617B CN102114617B CN201010574201A CN201010574201A CN102114617B CN 102114617 B CN102114617 B CN 102114617B CN 201010574201 A CN201010574201 A CN 201010574201A CN 201010574201 A CN201010574201 A CN 201010574201A CN 102114617 B CN102114617 B CN 102114617B
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Abstract
The invention discloses a preparation method of a Ti3SiC2-based ceramic bonding agent diamond grinding tool. Elemental Ti powder, Si powder and C powder are taken as bonding agent raw materials and are mixed with a diamond grinding material, and the mixture are ignited by a heat source, and are sintered by self-propagating to form a ceramic and diamond complex which takes the Ti3SiC2 as a main phase. The Ti3SiC2 bonding agent has low density, high melting point and high electrical conductivity, thermal conductivity, oxidation resistance and thermal shock resistance, and can form a carbide transition layer with carbon on the surface of diamond, so that the bonding agent and the diamond are well bonded through a chemical bond, and the holding force to the grinding material is improved. By the self-propagating sintering preparation method, preparation efficiency can be effectively improved, and energy consumption is reduced.
Description
Technical field
The present invention relates to the technology of preparing of ceramic bond diamond grinding tool, relate in particular to Ti
3SiC
2Base ceramic bond diamond grinding tool spread sintering preparation method certainly.
Background technology
The ceramic bond diamond grinding tool is the present rapider a kind of superhard material grinding tool of development, has high strength, and heat resistance is good, cut sharp, advantage such as grinding efficiency is high, is difficult for heating and obstruction in the grinding process, and thermal expansion amount is little.
Vitrified bond is mainly low temperature oxide at present, has the following shortcoming: low-temperature binder is used owing to produce diamond abrasive tool in (1), and for reducing refractoriness, bond is introduced a large amount of alkaline materials; Obtain the low-temp ceramics bond like this, its each item performance is wayward, for example refractoriness, low thermal coefficient of expansion, intensity etc.: when manufactured (2), bond was poor to the wetting cementitiousness of diamond abrasive grain; Reduced bond to the abrasive particle bond strength, during the grinding tool grinding, abrasive particle comes off soon; Abrasion are big: during (3) grinding, because brittleness of ceramics is big, the impact resistance of grinding tool, anti-fatigue performance are all very poor; The embrittlement phenomenon in use takes place easily, thereby influence the grinding tool grinding characteristic, and ceramic heat conductivility is poor; The grinding area local temperature is high, makes the easy thermal losses of abrasive particle, also can influence the grinding tool grinding characteristic.
Existing ceramic bond diamond grinding tool grinding layer preparation method is that high temperature sintering forms after colding pressing usually, needs heating for a long time, and production efficiency is low, and energy consumption is high.
Traditional vitrified bond characteristics and preparation method have limited the use of ceramic bond diamond grinding tool.
Summary of the invention
Technical problem to be solved by this invention is to overcome the shortcoming of existing vitrified bond, proposes a kind of new Ti
3SiC
2Vitrified bond and this ceramic bond diamond instrument spread the sintering preparation method certainly.
Adopt following technical scheme in order to solve the problems of the technologies described above: a kind of Ti
3SiC
2Base ceramic bond diamond grinding tool, the bond of diamond grinding instrument is Ti
3SiC
2The base pottery.
A kind of Ti
3SiC
2The preparation method of base ceramic bond diamond grinding tool, Ti powder, Si powder, the C powder that adopts simple substance is after bond raw material and diamond abrasive mix, to utilize thermal source to ignite, and relies on from spreading sintering and forms Ti
3SiC
2Pottery and adamantine complex for principal phase.
Its concrete grammar is following:
(1) selecting granularity for use is 200～400 purpose Ti powder, 200～400 purpose Si powder and 200～400 purpose C powder; The ratio of Ti: Si: C=2.9～3.1: 0.95～1.05: 1.9～2.1 takes by weighing in molar ratio; Abundant ball mill mixing in ball mill, the powder that obtains mixing;
(2) step 1 gained powder and diamond abrasive are mixed, obtain compound;
(3) utilize metal die to be cold-pressed into required grinding tool shape step 2 gained compound, obtain the pressed compact of colding pressing;
(4) the step 3 gained pressed compact of colding pressing is utilized the plasma arc firing device to ignite or is contained in the graphite jig and in plasma discharging hot pressed sintering machine, ignites, pressed compact takes place to obtain with Ti from spreading sintering reaction
3SiC
2Pottery and adamantine complex for principal phase;
(5) with finishing of step 4 gained complex or combination, obtain Ti
3SiC
2Base ceramic bond diamond grinding tool.
Ti among the present invention
3SiC
2Bond density is low high with fusing point, has favorable conductive and thermal conductivity, good non-oxidizability and thermal shock resistance; Have machinability, compare traditional oxide ceramics bond, have good thermal-shock resistance, high refractoriness, high-fracture toughness and high strength etc.; And carbide-containing forming element in the raw material; Therefore can form the carbide transition zone with the carbon of diamond surface, have good chemical bond between bond and diamond and combines thereby make, raising is to the hold of abrasive material.Adopt from spreading sintering preparation method to this binding agent diamond tool, can improve preparation efficiency effectively, cut down the consumption of energy, and, can greatly reduce adamantine fire damage because sintering time is short.
Ti
3SiC
2Base ceramic bond diamond grinding tool adopts from the principle that spreads sintering preparation method and is: Ti powder, Si powder and the C powder mixture of certain stoichiometric proportion, can be ignited by plasma arc or other thermals source at a certain temperature, and reaction can generate Ti
3SiC
2, the heat that reaction discharges can impel the sample W-response to carry out fast, and self-propagating reaction takes place.During this time, Ti powder, Si powder also can react with diamond, generate Ti at diamond surface
3SiC
2, compound such as TiC is as transition zone, has good chemical bond between bond and diamond and combines thereby make, and improves the hold to abrasive material.Obtain the Ti of definite shape
3SiC
2And diamond complex.
The specific embodiment
Embodiment 1: a kind of Ti
3SiC
2Base ceramic bond diamond grinding tool, the bond of diamond grinding instrument is Ti
3SiC
2The base pottery.Its preparation method is: Ti powder, Si powder, the C powder that adopts simple substance is after bond raw material and diamond abrasive mix, to utilize thermal source to ignite, and relies on from spreading sintering and forms Ti
3SiC
2Pottery and adamantine complex for principal phase.
Ti
3SiC
2Base ceramic bond diamond grinding tool adopts from the principle that spreads sintering preparation method and is: Ti powder, Si powder and the C powder mixture of certain stoichiometric proportion, can be ignited by plasma arc or other thermals source at a certain temperature, and reaction can generate Ti
3SiC
2, the heat that reaction discharges can impel the sample W-response to carry out fast, and self-propagating reaction takes place.During this time, Ti powder, Si powder also can react with diamond, generate Ti at diamond surface
3SiC
2, compound such as TiC is as transition zone, has good chemical bond between bond and diamond and combines thereby make, and improves the hold to abrasive material.Obtain the Ti of definite shape
3SiC
2And diamond complex.
Embodiment 2: a kind of Ti
3SiC
2The preparation method of base ceramic bond diamond grinding tool, its concrete grammar is following:
(1) selecting granularity for use is 200～400 purpose Ti powder, 200～400 purpose Si powder and 200～400 purpose C powder; The ratio of Ti: Si: C=2.9～3.1: 0.95～1.05: 1.9～2.1 takes by weighing in molar ratio; Abundant ball mill mixing in ball mill, the powder that obtains mixing;
(2) step 1 gained powder and diamond abrasive are mixed, obtain compound;
(3) utilize metal die to be cold-pressed into required grinding tool shape step 2 gained compound, obtain the pressed compact of colding pressing;
(4) the step 3 gained pressed compact of colding pressing is utilized the plasma arc firing device to ignite or is contained in the graphite jig and in plasma discharging hot pressed sintering machine, ignites, pressed compact takes place to obtain with Ti from spreading sintering reaction
3SiC
2Pottery and adamantine complex for principal phase;
(5) with finishing of step 4 gained complex or combination, obtain Ti
3SiC
2Base ceramic bond diamond grinding tool.
In above-mentioned manufacturing approach, adamantine granularity, model, concentration, selected according to the material and the processing request of processing object.
Embodiment 3: a kind of Ti
3SiC
2The preparation method of base ceramic bond diamond grinding tool, its concrete grammar is following:
(1) selecting granularity for use is 300 purpose Ti powder, Si powder and C powder, and 3: 1: 2 in molar ratio ratio takes by weighing, and ball milling is 8 hours in planetary ball mill, the powder that obtains mixing;
(2) be that 140/170 diamond abrasive fully mixes by diamond concentration 60% (diamond content is 4.4 carats and is concentration 100% in per 1 cubic centimetre of base substrate) with step 1 gained powder and granularity;
(3) utilize metal die to be cold-pressed into diameter 30mm step 2 gained compound, length is the pressed compact of 40mm;
(4) utilize the plasma arc firing device to ignite the step 3 gained pressed compact of colding pressing, pressed compact generation self-propagating reaction obtains Ti
3SiC
2Pottery and adamantine complex for principal phase;
(5) with step 4 gained complex cavetto, obtain Ti
3SiC
2The ceramic ceramic bond diamond bistrique of base.
Embodiment 4: a kind of Ti
3SiC
2The preparation method of base ceramic bond diamond grinding tool, its concrete grammar is following:
(1) selecting granularity for use is 300 purpose Ti powder, Si powder and C powder, and 3: 1: 2 in molar ratio ratio takes by weighing, and ball milling is 8 hours in planetary ball mill, the powder that obtains mixing;
(2) be that 100/120 diamond abrasive fully mixes by diamond concentration 50% (diamond content is 4.4 carats and is concentration 100% in per 1 cubic centimetre of base substrate) with step 1 gained powder and granularity;
(3) utilize metal die to be cold-pressed into outside diameter 100mm step 2 gained compound, interior circular diameter 23mm, the pressed compact of thickness 12mm;
(4) the step 3 gained pressed compact of colding pressing is contained in the graphite jig, in the discharge plasma sintering press, utilizes plasma discharging to ignite, pressed compact generation self-propagating reaction obtains Ti
3SiC
2Pottery and adamantine complex for principal phase;
(5) with the finishing of step 4 gained complex, obtain Ti
3SiC
2The ceramic ceramic bond diamond emery wheel of base.
Embodiment 5: a kind of Ti
3SiC
2The preparation method of base ceramic bond diamond grinding tool, its concrete grammar is following:
(1) selecting granularity for use is 300 purpose Ti powder, Si powder and C powder, and 3: 1: 2 in molar ratio ratio takes by weighing, and ball milling is 8 hours in planetary ball mill, the powder that obtains mixing;
(2) be that 200/230 diamond abrasive fully mixes by diamond concentration 80% (diamond content is 4.4 carats and is concentration 100% in per 1 cubic centimetre of base substrate) with step 1 gained powder and granularity;
(3) utilize metal die to be cold-pressed into 50 * 10 * 10 pressed compact step 2 gained compound;
(4) utilize the plasma arc firing device to ignite the step 3 gained pressed compact of colding pressing, pressed compact generation self-propagating reaction obtains Ti
3SiC
2Pottery and adamantine complex for principal phase;
(5) with the finishing of step 4 gained complex, obtain Ti
3SiC
2The ceramic ceramic bond diamond honing stone of base.
Embodiment 6: a kind of Ti
3SiC
2The preparation method of base ceramic bond diamond grinding tool, its concrete grammar is following:
(1) selecting granularity for use is 300 purpose Ti powder, Si powder and C powder, and 3: 1: 2 in molar ratio ratio takes by weighing, and ball milling is 8 hours in planetary ball mill, the powder that obtains mixing;
(2) be that 120/140 diamond abrasive fully mixes by diamond concentration 80% (diamond content is 4.4 carats and is concentration 100% in per 1 cubic centimetre of base substrate) with step 1 gained powder and granularity;
(3) utilize metal die to be cold-pressed into exradius step 2 gained compound and be 400mm, interior radius of circle is 380mm, high 25mm, the joint piece of colding pressing of wide 40mm
(4) utilize the plasma arc firing device to ignite the step 3 gained pressed compact of colding pressing, pressed compact generation self-propagating reaction obtains Ti
3SiC
2Pottery and adamantine complex for principal phase; (5) with the finishing of step 4 gained complex, assembly adhesive sticks at external diameter 380mm, on the aluminum substrate of thickness 25mm, obtains Ti
3SiC
2The ceramic ceramic bond diamond joint of base piece emery wheel.
Claims (1)
1. Ti
3SiC
2Base ceramic bond diamond grinding tool is with Ti
3SiC
2The base pottery is a bond, it is characterized in that concrete grammar is following:
(1) selecting granularity for use is 200～400 purpose Ti powder, 200～400 purpose Si powder and 200～400 purpose C powder; The ratio of Ti: Si: C=2.9～3.1: 0.95～1.05: 1.9～2.1 takes by weighing in molar ratio; Abundant ball mill mixing in ball mill, the powder that obtains mixing;
(2) step 1 gained powder and diamond abrasive are mixed, obtain compound;
(3) utilize metal die to be cold-pressed into required grinding tool shape step 2 gained compound, obtain the pressed compact of colding pressing;
(4) the step 3 gained pressed compact of colding pressing is utilized the plasma arc firing device to ignite or is contained in the graphite jig and in plasma discharging hot pressed sintering machine, ignites, pressed compact takes place to obtain with Ti from spreading sintering reaction
3SiC
2Pottery and adamantine complex for principal phase;
(5) with finishing of step 4 gained complex or combination, obtain Ti
3SiC
2Base ceramic bond diamond grinding tool.
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| CN201010574201A CN102114617B (en) | 2010-12-06 | 2010-12-06 | Ti3SiC2-based ceramic bonding agent diamond grinding tool and preparation method thereof |
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| CN201010574201A CN102114617B (en) | 2010-12-06 | 2010-12-06 | Ti3SiC2-based ceramic bonding agent diamond grinding tool and preparation method thereof |
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| CN102114617B true CN102114617B (en) | 2012-09-05 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103215011B (en) * | 2012-01-20 | 2014-10-29 | 奇翼创新科技股份有限公司 | Diamond abrasive and electroplated diamond tool |
| CN103817610B (en) * | 2014-03-17 | 2016-08-17 | 中原工学院 | A kind of manufacture method of Furnace Brazing of Diamond Grinding Wheel With Ni |
| CN104842286A (en) * | 2015-05-20 | 2015-08-19 | 广东工业大学 | Superhard grinding tool and manufacturing method thereof |
| CN105058248A (en) * | 2015-08-04 | 2015-11-18 | 蓬莱市超硬复合材料有限公司 | Compound metal and ceramic bonding agent diamond grinding wheel |
| CN105196201A (en) * | 2015-09-22 | 2015-12-30 | 景德镇陶瓷学院 | Novel grinding material, novel grinding tool, preparing method of novel grinding material and preparing method of novel grinding tool |
| CN106518079A (en) * | 2016-10-24 | 2017-03-22 | 中国科学院福建物质结构研究所 | Silicon carbide matrix composite and preparation method thereof |
| CN110078511B (en) * | 2019-03-11 | 2021-10-12 | 昆明理工大学 | Ti3AlC2Method for preparing diamond drilling tool bit based on ceramic bond |
| CN113528879B (en) * | 2021-07-16 | 2022-01-14 | 燕山大学 | Polycrystalline diamond combined by compounds generated by in-situ reaction and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5330701A (en) * | 1992-02-28 | 1994-07-19 | Xform, Inc. | Process for making finely divided intermetallic |
| EP0731186A1 (en) * | 1993-09-24 | 1996-09-11 | The Ishizuka Research Institute, Ltd. | Composite material and process for producing the same |
| CN101342686A (en) * | 2008-07-04 | 2009-01-14 | 佛山市南海丹灶劲刚工模具有限公司 | Method for manufacturing diamond grinding block with self-spreading high-temperature synthesis |
| US7687132B1 (en) * | 2008-03-05 | 2010-03-30 | Hrl Laboratories, Llc | Ceramic microtruss |
-
2010
- 2010-12-06 CN CN201010574201A patent/CN102114617B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5330701A (en) * | 1992-02-28 | 1994-07-19 | Xform, Inc. | Process for making finely divided intermetallic |
| EP0731186A1 (en) * | 1993-09-24 | 1996-09-11 | The Ishizuka Research Institute, Ltd. | Composite material and process for producing the same |
| US7687132B1 (en) * | 2008-03-05 | 2010-03-30 | Hrl Laboratories, Llc | Ceramic microtruss |
| CN101342686A (en) * | 2008-07-04 | 2009-01-14 | 佛山市南海丹灶劲刚工模具有限公司 | Method for manufacturing diamond grinding block with self-spreading high-temperature synthesis |
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| CN102114617A (en) | 2011-07-06 |
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