CN102043495B - Conductive element and preparation method thereof, and touch screen panel - Google Patents
Conductive element and preparation method thereof, and touch screen panel Download PDFInfo
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- CN102043495B CN102043495B CN2009101105955A CN200910110595A CN102043495B CN 102043495 B CN102043495 B CN 102043495B CN 2009101105955 A CN2009101105955 A CN 2009101105955A CN 200910110595 A CN200910110595 A CN 200910110595A CN 102043495 B CN102043495 B CN 102043495B
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Abstract
The invention provides a conductive element and a preparation method thereof, and a touch screen panel. The conductive element comprises a transparent substrate, a dodging film system and an indium tin oxide line layer which are laminated in turn, wherein the dodging film system comprises a first dodging layer and a second dodging layer which are laminated in turn; the first dodging layer is positioned on one side of the transparent substrate, and the second dodging layer is positioned on one side of the indium tin oxide line layer; the first dodging layer is a silicon dioxide layer, and the second dodging layer is one of a zirconium dioxide layer, a titanium dioxide layer, a zirconium dioxide-titanium dioxide composite layer and an aluminum oxide layer; or the first dodging layer is a magnesium fluoride layer, and the second dodging layer is the zirconium dioxide layer. The conductive element can well eliminate display gaps and improves product quality.
Description
Technical field
The present invention relates to a kind of conducting element and preparation method thereof and a kind of touch panel, especially a kind of capacitive touch screen panel.
Background technology
Touch-screen allows the user to select and moving cursor through touch display screen with finger or stylus.Because touch screen operation is simple, diverse in function, now more and more universal.Touch-screen commonly used generally comprises touch panel, controller and software driver.Touch panel registers touch events, and send to controller to touch signal, controller is handled these signals data is sent to computer system, and software driver is translated into computer event to touch event.Several kinds of common touch screen technologies comprise resistance-type, condenser type, infrared, surface acoustic wave, electromagnetism, near field imaging or the like.
Wherein, capacitive touch screen utilizes the body current induction to carry out work, and the surface scribbles transparent conductance layer ITO, extraction electrode on four angles, and small direct current is dispersed in screen surfaces, forms even electric field.During with the hand touch screen, because people's bulk electric field, human body and touch screen surface form a coupling capacitance.Human body is as coupling capacitance one utmost point, and electric current compiles and forms another utmost point of coupling capacitance from shielding four jiaos, calculates the coordinate that relative distance that electric current passes to touch location obtains touching through controller.
In the self-capacitance sensing device that prior art is used, transparent light guide medium (tin indium oxide commonly used) is configured to the electrode and the track of apart, and each electrode is represented a different coordinate, and track is connected to a capacitance sensing circuit to electrode.Electrode is located with row and column, thereby has constituted a grid array.Therefore each electrode pair is answered a ranks position coordinates, and the position of capacitance variations and the amplitude of these variations appear in the capacitance variations that occurs on each electrode of sensing circuit monitoring, thereby can be with helping discern a plurality of touch events.
In order on glass, film or plastics, to constitute electrode and track, can use the mold pressing of tin indium oxide (ITO) material to form, normally ITO layer of deposition is realized on substrate surface, etches away part ITO layer then and forms circuit.Because the zone that etches away ITO is different with the refractive index of ITO array region, on the surface, the slit between the ITO electrode can be on screen display process, very clear, greatly influenced the quality of touch-screen.
In order to eliminate the influence in above-mentioned slit, the method that available technology adopting is dwindled the ITO distance between electrodes reduces influence, and known ITO distance between electrodes can be set to 15 microns, but it is also not obvious to eliminate the effect that shows the slit.
Summary of the invention
The present invention provides a kind of conducting element in order to overcome the problem in screen displaying slit in the prior art, can obviously eliminate the demonstration slit through the touch panel that this conducting element prepares, and has improved the quality of touch-screen.
Conducting element disclosed by the invention comprises that the transparent base that stacks gradually, even light film are, the tin indium oxide line layer; Said even light film is to comprise the first even photosphere and the second even photosphere that stacks gradually; The said first even photosphere is positioned at transparent base one side, and the second even photosphere is positioned at tin indium oxide line layer one side; The said first even photosphere is a silicon dioxide layer, and the second even photosphere is selected from a kind of in zirconium dioxide layer, titanium dioxide layer, zirconium dioxide-titania composite bed or the alumina layer; The perhaps said first even photosphere is the magnesium fluoride layer, and the second even photosphere is the zirconium dioxide layer.
Simultaneously, the invention also discloses the preparation method of above-mentioned conducting element, comprising:
A, form the first even photosphere on transparent base surface, and then form the second even photosphere on the first even photosphere;
B, on the second even photosphere deposition indium oxide layer tin film, carry out etching then, form the tin indium oxide line layer.
In addition, the present invention also provides a kind of touch panel, comprises conducting element and the protective seam that is positioned at conductive element surface, and said conducting element is above-mentioned conducting element, and said protective seam is adjacent with the tin indium oxide line layer.
According to conducting element disclosed by the invention; Through even light film is set between transparent base and tin indium oxide (ITO) line layer be; Light is regulated, thereby eliminated because the demonstration slit that tin indium oxide (ITO) line layer and the refringence of white space on every side cause.Improved the quality of touch-screen to a great extent.
Description of drawings
Fig. 1 is the structural representation of conducting element provided by the invention;
Fig. 2 is the tin indium oxide line layer structural representation of conducting element provided by the invention;
Fig. 3 is a touch panel provided by the invention and the synoptic diagram that combines of display screen;
Fig. 4 is the structural representation of embodiment 1 disclosed touch panel;
Fig. 5 is the structural representation of embodiment 2 disclosed touch panels;
Fig. 6 is the structural representation of embodiment 3 disclosed touch panels;
Fig. 7 is the structural representation of embodiment 4 disclosed touch panels.
Embodiment
Clearer for technical matters, technical scheme and beneficial effect that the present invention is solved, below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
The invention discloses a kind of conducting element; Comprise that the transparent base that stacks gradually, even light film are, the tin indium oxide line layer; Said even light film is to comprise the first even photosphere and the second even photosphere that stacks gradually; The said first even photosphere is positioned at transparent base one side, and the second even photosphere is positioned at tin indium oxide line layer one side; The said first even photosphere is a silicon dioxide layer, and the second even photosphere is selected from a kind of in zirconium dioxide layer, titanium dioxide layer, zirconium dioxide-titania composite bed or the alumina layer; The perhaps said first even photosphere is the magnesium fluoride layer, and the second even photosphere is the zirconium dioxide layer.
Wherein, the inventor finds, in the even light film system, mutual alignment relation and collocation between even photosphere material chosen and each the even photosphere are very big to revealing the influence that shows the slit, otherwise, realization not the object of the invention.The even light film that adopts said structure is to eliminate to show the respond well of slit.
Said transparent base is this area various transparent bases commonly used; Be preferably the transparent base that refractive index is 1.49-1.6; The transparent base that meets above-mentioned condition can have multiple; As can be selected from a kind of in glass, polyethylene terephthalate, acryl resin, polycarbonate, the polymethylmethacrylate, the refractive index of the transparent base that only needs to be selected for use gets final product in above-mentioned scope.Above-mentioned qualified transparent base all can be commercially available.
According to the present invention, the said first even photosphere thickness is 30-150nm, and the second even photosphere thickness is 30-150nm.Being preferably the said first even photosphere thickness is 30-140nm, and the second even photosphere thickness is 30-140nm.Further under the preferable case, the said first even photosphere is 1 with the second even photosphere thickness ratio: 1-2.More preferably the first even photosphere is 1 with the second even photosphere thickness ratio: 1-1.2.
In the present invention, silicon dioxide that uses as the first even photosphere or magnesium fluoride and the zirconium dioxide, titania, zirconium dioxide-titania composite bed or the aluminium oxide that use as the second even photosphere all can be commercially available.
The thickness of controlling the above-mentioned first even photosphere and the second even photosphere is in above-mentioned scope; When especially meeting above-mentioned relation between the thickness of the first even photosphere and the second even photosphere; Can effectively interfere and regulate light wave, further reduce the influence in the demonstration slit that the refringence of zones of different causes.
When the said first even photosphere is a silicon dioxide layer; When the second even photosphere is titanium dioxide layer; As further improvement to conducting element disclosed by the invention; Between said even light film system and tin indium oxide line layer, supplement film system can also be set, said supplement film is to comprise first extra play and second extra play; Said first extra play is positioned at second even photosphere one side, and said second extra play is positioned at tin indium oxide line layer one side.Said first extra play is identical with the first even photosphere, and said second extra play is identical with the second even photosphere.Said first extra play is identical with the first even photosphere to be meant that the material and the thickness of first extra play and the first even photosphere are all identical.Equally, second extra play is identical with the second even photosphere is meant that the material and the thickness of second extra play and the second even photosphere are identical.
The inventor finds, fastens at said even light film and adds supplement film system again and to eliminating the effect that shows the slit good facilitation is arranged.
In above-mentioned conducting element, said tin indium oxide line layer thickness is 9-15nm, is preferably 12-15nm.
Concrete, the structure of above-mentioned conducting element is as shown in Figure 1, comprises that transparent base 1, even light film are 2 and tin indium oxide line layer 3.
The invention also discloses the preparation method of above-mentioned conducting element, comprising:
A, form the first even photosphere on transparent base surface, and then form the second even photosphere on the first even photosphere;
B, on the second even photosphere deposition indium oxide layer tin film, carry out etching then, form the tin indium oxide line layer.
The method of the said formation first even photosphere and the second even photosphere is vacuum evaporation or magnetron sputtering; The method of said deposition indium oxide tin film is vacuum evaporation or magnetron sputtering.
Concrete, before the transparent base surface forms the first even photosphere, comprise also transparent base carried out clean that the method for above-mentioned clean is a whole bag of tricks commonly used in the prior art.
The method of the above-mentioned formation first even photosphere, the second even photosphere and indium oxide tin film is preferably magnetron sputtering.As the method that forms the first even photosphere specifically can for: control magnetron sputtering condition is: temperature is 250-300 ℃; Base vacuum degree≤0.002Pa; Working vacuum degree≤0.5Pa, work atmosphere are 99.999% high-purity argon gas, and flow is 250-350Sccm; Transparent base is 12-18mm/s through target surface speed, and target surface power is 4-5W/cm
2, the target surface voltage is 470V, 99.995% high purity oxygen component accounts for 12-18%.Can obtain the above-mentioned first even photosphere.The thickness of the first even photosphere can be regulated through the time of control magnetron sputtering, and the method for adjusting is known in those skilled in the art.
The method that forms the second even photosphere specifically can for: control magnetron sputtering condition is: temperature is 250-300 ℃; Base vacuum degree≤0.002Pa; Working vacuum degree≤0.5Pa, work atmosphere are 99.999% high-purity argon gas, and flow is 200-270Sccm; Transparent base is 12-18mm/s through target surface speed, and target surface power is 4-5W/cm
2, the target surface voltage is 600-800V, 99.995% high purity oxygen component accounts for 10-15%, can obtain the above-mentioned second even photosphere.The thickness of the second even photosphere can be regulated through the time of control magnetron sputtering, and the method for adjusting is known in those skilled in the art.
The method that forms indium oxide tin film for control magnetron sputtering condition is: temperature is 350-380 ℃; Base vacuum degree≤0.002Pa; Working vacuum degree≤0.5Pa, work atmosphere are 99.999% high-purity argon gas, and flow is 250-300Sccm; Transparent base is 12-18mm/s through target surface speed, and target surface power is 0.5-1W/cm
2, the target surface voltage is 280-320V, 99.995% high purity oxygen component≤1% can obtain above-mentioned indium oxide tin film.The thickness of indium oxide tin film can be regulated through the time of control magnetron sputtering, and the method for adjusting is known in those skilled in the art.
When conducting element disclosed by the invention comprised that also the annex film is, the preparation method of first extra play and second extra play was identical with the preparation method of the second even photosphere respectively at the first even photosphere in the supplement film system, repeats no more at this.
Indium oxide tin film is carried out etch processes; Engraving method is commonly known in the art; Zone as on indium oxide tin film, needing earlier to form circuit applies resist; Then indium oxide tin film is contacted with etching solution, wash the resist on surface behind the formation tin indium oxide line layer, can obtain the tin indium oxide line layer.Above-mentionedly be used for the etched resist of indium oxide tin film and etching solution all can be commercially available.The tin indium oxide configuration that forms can be various forms, and as shown in Figure 2, wherein 8 is indium-tin oxide electrode, and 9 is the tin indium oxide circuit.
Can make conducting element disclosed by the invention through said method, this conducting element can be used to make touch-screen, can eliminate the demonstration slit of touch-screen.
In addition, the invention also discloses a kind of touch panel, comprise conducting element and the protective seam that is positioned at conductive element surface, wherein, conducting element is the conducting element of said structure, and said protective seam is adjacent with the tin indium oxide line layer.Said protective layer thickness is 0.1-0.5mm; The used material of protective seam is selected from a kind of in glass or the transparent plastic.Said transparent who knows can be polymethylmethacrylate, polycarbonate, polyethylene terephthalate, acryl resin.
Under the preferable case, said touch panel also comprises the antireflection coatings, and said antireflection coatings is positioned on the protective seam surface relative with the tin indium oxide line layer.
The antireflection coatings can obtain through prepared in various methods of the prior art, like vacuum evaporation or magnetron sputtering.
Above-mentioned touch panel can use on the LCD display; As shown in Figure 3; Touch panel 6 is arranged at LCD display 7 surfaces; Wherein, touch panel 6 comprise that the transparent base 1 that stacks gradually, even light film are 2, tin indium oxide line layer 3, protective seam 4 and antireflection coatings (not shown).The transparent base 1 of touch-screen 6 is positioned on the LCD display 7.
Touch panel disclosed by the invention can be eliminated and show the slit, has improved the quality of product greatly.
Through embodiment the present invention is further described below.
Present embodiment is used to explain conducting element disclosed by the invention and preparation method thereof and touch panel.
One glass baseplate (refractive index is 1.519) is placed in the magnetron sputtering machine, is target with silicon dioxide, at glass baseplate coating surface silicon dioxide; Control magnetron sputtering condition is: temperature is 260 ℃, and base vacuum degree≤0.002Pa, working vacuum degree are 0.42Pa; Work atmosphere is 99.999% high-purity argon gas; Flow is 300Sccm, and transparent base is 16mm/s through target surface speed, and target surface power is 4.2W/cm
2, the target surface voltage is 470V, 99.995% high purity oxygen component accounts for 15%, forms the first thick even photosphere of 50nm.
Target is replaced by zirconium dioxide, and the adjusting technological parameter is: temperature is 260 ℃, base vacuum degree≤0.002Pa; The working vacuum degree is 0.42Pa, and work atmosphere is 99.999% high-purity argon gas, and flow is 240Sccm; Transparent base is 16mm/s through target surface speed, and target surface power is 4.5W/cm
2, the target surface voltage is 470V, 99.995% high purity oxygen component accounts for 15%, at the first even photosphere coating surface zirconium dioxide, forms the second thick even photosphere of 120nm.
Target is replaced by tin indium oxide, and the adjusting technological parameter is: temperature is 360 ℃, base vacuum degree≤0.002Pa; The working vacuum degree is 0.4Pa, and work atmosphere is 99.999% high-purity argon gas, and flow is 280Sccm; Transparent base is 16mm/s through target surface speed, and target surface power is 0.4W/cm
2, the target surface voltage is 300V, 99.995% high purity oxygen component accounts for 0.5%, at the first even photosphere coating surface zirconium dioxide, forms the thick indium oxide tin film of 10nm.
Indium oxide tin film is carried out etch processes, form the tin indium oxide line layer.
Get polyethylene terephthalate film (PET, thickness are 0.2mm) as protective seam, form the antireflection coatings through magnetron sputtering, protective seam is embossed on the tin indium oxide line layer can obtains touch panel S1 at the protective seam upper surface.
In the present embodiment, as shown in Figure 4, touch panel 6 comprises glass baseplate 10 successively; Even light film is 11; Tin indium oxide (ITO) line layer 14; Protective seam 41.Even light film is that 11 to comprise the first even photosphere 12 be silicon dioxide layer with second even photosphere 13, the first even photospheres 12, and second to spare photosphere 13 be the zirconium dioxide layer.Glass baseplate 10 is arranged on the LCD display 7.Through visual inspection, above-mentioned touch panel S1 goes up does not have the slit of demonstration.
Present embodiment is used to explain conducting element disclosed by the invention and preparation method thereof and touch panel.
The preparation method of touch panel is identical with embodiment 1, obtains touch panel S2, and different is:
Adopt polyethylene terephthalate film (PET, refractive index is 1.6) replacement glass baseplate.
The first even photosphere thickness that forms is 60nm, and tin indium oxide line layer thickness is 12nm.
Adopt aluminium oxide target replacement zirconium dioxide target, obtaining the second even photosphere is alumina layer; The second even photosphere thickness is 120nm.
In the present embodiment, as shown in Figure 5, touch panel 6 comprises PET film 15 successively; Even light film is 16; Tin indium oxide (ITO) line layer 19; Protective seam 42.Even light film is that 16 to comprise the first even photosphere 17 be silicon dioxide layer with second even photosphere 18, the first even photospheres 17, and second to spare photosphere 18 be alumina layer.PET film 15 is arranged on the LCD display 7.Through visual inspection, above-mentioned touch panel S2 goes up does not have the slit of demonstration.
Present embodiment is used to explain conducting element disclosed by the invention and preparation method thereof and touch panel.
The preparation method of touch panel is identical with embodiment 1, obtains touch panel S3, and different is:
Adopt polymethylmethacrylate (PMMA, refractive index is 1.49) replacement glass baseplate.
The first even photosphere thickness that forms is 90nm.
Adopt titania target replacement zirconium dioxide target, obtaining the second even photosphere is titanium dioxide layer; The second even photosphere thickness is 90nm.
On the second even photosphere, form the thick silicon dioxide layer of 90nm as first extra play through magnetron sputtering once more, and then form the thick titanium dioxide layer of 90nm as second extra play through magnetron sputtering again on first extra play.On second extra play, form indium oxide tin film again, the thickness of indium oxide tin film is 14nm.
As shown in Figure 6, touch panel 6 comprises PMMA film 20 successively; Even light film is 21; Supplement film is 212; Tin indium oxide (ITO) line layer 26; Protective seam 43.Even light film is that 21 to comprise the first even photosphere 22 be silicon dioxide layer with second even photosphere 23, the first even photospheres 22, and second to spare photosphere 23 be titanium dioxide layer.Supplement film is 212 to comprise that first extra play 24 and second extra play, 25, the first extra plays 24 are silicon dioxide layer, and second extra play 25 is a titanium dioxide layer.
Present embodiment is used to explain conducting element disclosed by the invention and preparation method thereof and touch panel.
The preparation method of touch panel is identical with embodiment 2, obtains touch panel S4, and different is:
Adopt magnesium fluoride target replacement silicon dioxide target, obtaining the first even photosphere is the magnesium fluoride layer;
Adopt zirconium dioxide target replacement aluminium oxide target, obtaining the second even photosphere is the zirconium dioxide layer;
As shown in Figure 7, touch panel 6 comprises glass baseplate 32 successively; Even light film is 27; Tin indium oxide (ITO) line layer 30; Protective seam 40.Even light film is that 27 to comprise the first even photosphere 28 be the magnesium fluoride layer with second even photosphere 29, the first even photospheres 28, and second to spare photosphere 29 be titanium dioxide layer.Glass baseplate 32 is arranged on the LCD display 7.Through visual inspection, above-mentioned touch panel S4 goes up does not have the slit of demonstration.
Comparative Examples 1
The preparation method of touch panel is identical with embodiment 1; Obtain touch panel D1; Different is the location swap of the first even photosphere and the second even photosphere; Promptly on glass baseplate, form the zirconium dioxide layer earlier as the first even photosphere, on the zirconium dioxide layer, form silicon dioxide layer again as the second even photosphere.
Through visual inspection, above-mentioned touch panel D1 goes up to exist and significantly shows the slit.
Result through above embodiment and Comparative Examples can find out, after the touch panel of processing through conducting element disclosed by the invention is applied on the display screen, can eliminates and shows the slit, improved the quality of product.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. conducting element; Comprise that the transparent base that stacks gradually, even light film are, the tin indium oxide line layer; Said even light film is to comprise the first even photosphere and the second even photosphere that stacks gradually, and the said first even photosphere is positioned at transparent base one side, and the second even photosphere is positioned at tin indium oxide line layer one side; The said first even photosphere is a silicon dioxide layer, and the second even photosphere is selected from a kind of in zirconium dioxide layer, titanium dioxide layer, zirconium dioxide-titania composite bed or the alumina layer; The perhaps said first even photosphere is the magnesium fluoride layer, and the second even photosphere is the zirconium dioxide layer, and the said first even photosphere thickness is 30-150nm, and the second even photosphere thickness is 30-150nm.
2. conducting element according to claim 1 is characterized in that, said transparent base refractive index is 1.49-1.6.
3. conducting element according to claim 2 is characterized in that, said transparent base is selected from a kind of in glass, polyethylene terephthalate, acryl resin, polycarbonate, the polymethylmethacrylate.
4. conducting element according to claim 1 is characterized in that, the said first even photosphere is 1 with the second even photosphere thickness ratio: 1-2.
5. according to any described conducting element in the claim 1,2,4, it is characterized in that the said first even photosphere is a silicon dioxide layer, the second even photosphere is a titanium dioxide layer; Also be provided with supplement film system between said even light film system and the tin indium oxide line layer, said supplement film is to comprise first extra play and second extra play; Said first extra play is positioned at second even photosphere one side, and said second extra play is positioned at tin indium oxide line layer one side; Said first extra play is identical with the first even photosphere, and said second extra play is identical with the second even photosphere.
6. conducting element according to claim 1 is characterized in that, said tin indium oxide line layer thickness is 9-15nm.
7. the preparation method of conducting element as claimed in claim 1 comprises:
A, form the first even photosphere, on the first even photosphere, form the second even photosphere then on transparent base surface;
B, on the second even photosphere deposition indium oxide layer tin film, carry out etching then, form the tin indium oxide line layer.
8. preparation method according to claim 7 is characterized in that, the method for the said formation first even photosphere and the second even photosphere is vacuum evaporation or magnetron sputtering; The method of said deposition indium oxide tin film is vacuum evaporation or magnetron sputtering.
9. a touch panel comprises conducting element and the protective seam that is positioned at conductive element surface, and said conducting element is any described conducting element among the claim 1-4, and said protective seam is adjacent with the tin indium oxide line layer.
10. touch panel according to claim 9 is characterized in that, said protective layer thickness is 0.1-0.5mm; The used material of protective seam is selected from a kind of in glass or the transparent plastic.
11. according to claim 9 or 10 described touch panels, it is characterized in that said touch panel also comprises the antireflection coatings, said antireflection coatings is positioned on the protective seam surface relative with the tin indium oxide line layer.
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| KR101454148B1 (en) * | 2012-03-23 | 2014-10-22 | 세키스이나노코토테크노로지 가부시키가이샤 | Light-transmitting electroconductive film, method for producing same, and use therefor |
| JP6307062B2 (en) * | 2012-03-30 | 2018-04-04 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Transparent body used in touch panel and manufacturing method and apparatus thereof |
| CN102736812B (en) * | 2012-05-14 | 2016-12-14 | 浙江金徕镀膜有限公司 | A kind of panel construction and preparation method thereof |
| CN102779570A (en) * | 2012-06-25 | 2012-11-14 | 普发玻璃（深圳）有限公司 | Shadow-eliminating and anti-reflection electric conduction film coating layer |
| CN102723128B (en) * | 2012-06-25 | 2015-02-18 | 深圳豪威真空光电子股份有限公司 | Flexible transparent conductive film and manufacturing method thereof and touch panel |
| CN102888585B (en) * | 2012-10-28 | 2014-11-26 | 梧州奥卡光学仪器有限公司 | Process for producing reflection reducing coating |
| CN103870072A (en) * | 2012-12-17 | 2014-06-18 | 比亚迪股份有限公司 | Capacitive touch screen and production method thereof |
| CN104176947B (en) * | 2014-08-07 | 2016-08-24 | 宜昌南玻显示器件有限公司 | ITO electro-conductive glass and preparation method thereof |
| CN106746722A (en) * | 2016-12-15 | 2017-05-31 | 无锡时柒伍科技有限公司 | The preparation method of the magnetic sputtering coating of the special screen display glass of Intelligent mirror |
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| CN101465172A (en) * | 2008-12-31 | 2009-06-24 | 中国科学院上海硅酸盐研究所 | Transparent conductive film with compound structure and preparation method thereof |
| CN101475317A (en) * | 2009-02-13 | 2009-07-08 | 江苏津通先锋光电显示技术有限公司 | High transmittance conductive glass for touch screen and technique for producing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465172A (en) * | 2008-12-31 | 2009-06-24 | 中国科学院上海硅酸盐研究所 | Transparent conductive film with compound structure and preparation method thereof |
| CN101475317A (en) * | 2009-02-13 | 2009-07-08 | 江苏津通先锋光电显示技术有限公司 | High transmittance conductive glass for touch screen and technique for producing the same |
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