CN102012001B - 一种用于led的透镜设计方法 - Google Patents
一种用于led的透镜设计方法 Download PDFInfo
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- CN102012001B CN102012001B CN 200910195229 CN200910195229A CN102012001B CN 102012001 B CN102012001 B CN 102012001B CN 200910195229 CN200910195229 CN 200910195229 CN 200910195229 A CN200910195229 A CN 200910195229A CN 102012001 B CN102012001 B CN 102012001B
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CN 200910195229 CN102012001B (zh) | 2009-09-07 | 2009-09-07 | 一种用于led的透镜设计方法 |
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CN 200910195229 CN102012001B (zh) | 2009-09-07 | 2009-09-07 | 一种用于led的透镜设计方法 |
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CN102012001A CN102012001A (zh) | 2011-04-13 |
CN102012001B true CN102012001B (zh) | 2013-06-19 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102297381A (zh) * | 2011-09-27 | 2011-12-28 | 福建蓝蓝高科技发展有限公司 | 一种led类环形光的二次配光装置 |
CN102322611B (zh) * | 2011-10-11 | 2014-07-09 | 上海三思电子工程有限公司 | 双光斑透镜的设计方法 |
CN103322513B (zh) * | 2012-03-23 | 2015-08-12 | 大连工业大学 | 用于led产生环形光斑的混合式折反射器及其使用方法 |
CN102943993B (zh) * | 2012-11-23 | 2016-12-21 | 上海三思电子工程有限公司 | 一种矩形照射光斑的透镜设计方法 |
CN104296071A (zh) * | 2014-09-23 | 2015-01-21 | 上海三思电子工程有限公司 | 全周光配光透镜的设计方法及相应的配光透镜 |
CN104501091B (zh) * | 2014-12-26 | 2018-01-16 | 成都恒坤光电科技有限公司 | 一种照度呈高斯分布的led二次配光透镜设计方法 |
CN112393203A (zh) * | 2019-08-16 | 2021-02-23 | 上海三思电子工程有限公司 | Led全反射透镜表面形状计算方法、装置、设备和介质 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101251650A (zh) * | 2008-03-21 | 2008-08-27 | 清华大学 | 给定照度分布的led三维光学系统设计方法及光学系统 |
CN101482652A (zh) * | 2009-02-12 | 2009-07-15 | 复旦大学 | 一种针对点光源配光透镜的设计方法 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101251650A (zh) * | 2008-03-21 | 2008-08-27 | 清华大学 | 给定照度分布的led三维光学系统设计方法及光学系统 |
CN101482652A (zh) * | 2009-02-12 | 2009-07-15 | 复旦大学 | 一种针对点光源配光透镜的设计方法 |
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Owner name: SHANGHAI SANSI TECHNOLOGY CO., LTD. JIASHAN SANSI Free format text: FORMER OWNER: SHANGHAI SANSI TECHNOLOGY CO., LTD. JIASHAN SANSI OPTOELECTRONICS TECHNOLOGY CO., LTD. Effective date: 20150518 |
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Address after: 201100 Shanghai city Minhang District Shuying Road No. 1280 Patentee after: SHANGHAI SANSI ELECTRONIC ENGINEERING Co.,Ltd. Patentee after: Shanghai Sansi Technology Co.,Ltd. Patentee after: JIASHAN SANSI OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 201100 Shanghai city Minhang District Shuying Road No. 1280 Patentee before: SHANGHAI SANSI ELECTRONIC ENGINEERING Co.,Ltd. Patentee before: Shanghai Sansi Technology Co.,Ltd. Patentee before: Jiashan Jinghui Optoelectronic Technology Co.,Ltd. |
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Effective date of registration: 20150518 Address after: 201100 Shanghai city Minhang District Shuying Road No. 1280 Patentee after: SHANGHAI SANSI ELECTRONIC ENGINEERING Co.,Ltd. Patentee after: Shanghai Sansi Technology Co.,Ltd. Patentee after: JIASHAN SANSI OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Patentee after: SANSI OPTOELECTRONICS TECHNOLOGY (SHANGHAI) Co.,Ltd. Address before: 201100 Shanghai city Minhang District Shuying Road No. 1280 Patentee before: SHANGHAI SANSI ELECTRONIC ENGINEERING Co.,Ltd. Patentee before: Shanghai Sansi Technology Co.,Ltd. Patentee before: JIASHAN SANSI OPTOELECTRONIC TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20190710 Address after: 201100 Shanghai city Minhang District Shuying Road No. 1280 Co-patentee after: Shanghai Sansi Technology Co.,Ltd. Patentee after: SHANGHAI SANSI ELECTRONIC ENGINEERING Co.,Ltd. Co-patentee after: JIASHAN SANSI OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Co-patentee after: SANSI OPTOELECTRONICS TECHNOLOGY (SHANGHAI) Co.,Ltd. Co-patentee after: PUJIANG SANSI PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 201100 Shanghai city Minhang District Shuying Road No. 1280 Co-patentee before: Shanghai Sansi Technology Co.,Ltd. Patentee before: SHANGHAI SANSI ELECTRONIC ENGINEERING Co.,Ltd. Co-patentee before: JIASHAN SANSI OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Co-patentee before: SANSI OPTOELECTRONICS TECHNOLOGY (SHANGHAI) Co.,Ltd. |
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Effective date of registration: 20191107 Address after: 201100 Shanghai city Minhang District Shuying Road No. 1280 Co-patentee after: Shanghai Sansi Technology Co.,Ltd. Patentee after: SHANGHAI SANSI ELECTRONIC ENGINEERING Co.,Ltd. Co-patentee after: JIASHAN SANSI OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Co-patentee after: PUJIANG SANSI PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 201100 Shanghai city Minhang District Shuying Road No. 1280 Co-patentee before: Shanghai Sansi Technology Co.,Ltd. Patentee before: SHANGHAI SANSI ELECTRONIC ENGINEERING Co.,Ltd. Co-patentee before: JIASHAN SANSI OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Co-patentee before: SANSI OPTOELECTRONICS TECHNOLOGY (SHANGHAI) Co.,Ltd. Co-patentee before: PUJIANG SANSI PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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