CN102005445A - Encapsulation structure of light emitting diode (LED) light source module - Google Patents
Encapsulation structure of light emitting diode (LED) light source module Download PDFInfo
- Publication number
- CN102005445A CN102005445A CN2010102995730A CN201010299573A CN102005445A CN 102005445 A CN102005445 A CN 102005445A CN 2010102995730 A CN2010102995730 A CN 2010102995730A CN 201010299573 A CN201010299573 A CN 201010299573A CN 102005445 A CN102005445 A CN 102005445A
- Authority
- CN
- China
- Prior art keywords
- source module
- light source
- led
- reflector
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000741 silica gel Substances 0.000 claims abstract description 13
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 13
- 239000003292 glue Substances 0.000 claims abstract description 9
- 238000010276 construction Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 239000004568 cement Substances 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an encapsulation structure of a light emitting diode (LED) light source module, belonging to the field of processing lighting equipment and comprising a base with a reflector cup, and at least one LED chip is arranged in the center of the bottom of the reflector cup of the base, wherein the LED chip is glued on the bottom of the reflector cup by insulation glue. The encapsulation structure is characterized in that a hard silica gel layer is coated around the surface of the LED chip, a mixed layer of glue and fluorescent powder is coated outside the hard silica gel layer, and the positive poles and the negative poles of the chips are led out after the chips are connected by wires.
Description
[technical field]
The present invention relates to a kind of lighting apparatus, relate in particular to a kind of led light source module.
[background technology]
LED is a kind of low voltage light sources, because its power saving, life-span is long, various low-voltage lighting devices now have been widely used in, traditional led light source module encapsulation construction generally comprises a metab with reflector, reflector bottom center at base is provided with some led chips, this led chip is bonded at the bottom center of reflector equably by welding manner or insulating cement, be in series by lead between the led chip or parallel connection after draw, be connected to the wiring board of the reflector outside that is arranged on the metab, make led chip be covered mixed layer inside fully after again the upper surface of led chip being applied glue and fluorescent material mixed layer.In above-mentioned traditional led light source module encapsulation construction, in order to save cost, what therefore described glue and fluorescent material mixed layer adopted mostly is soft silica gel, but its light efficiency loss is bigger, if adopt hard silica gel then can improve light efficiency, but the cost of led module can significantly increase simultaneously, is unfavorable for industrial large-scale production.
[summary of the invention]
The technical problem to be solved in the present invention is to provide a kind of and can either saves production cost, can keep the led light source module encapsulation construction of light efficiency preferably again.
The present invention is achieved in that a kind of led light source module encapsulation construction, comprise that one has the base of reflector, the reflector bottom center of base is provided with at least one led chip, this led chip is bonded at the bottom of reflector by insulating cement, be coated with a hard layer of silica gel around the surface of described led chip, also be coated with glue and fluorescent material mixed layer in the outside of this hard layer of silica gel, draw both positive and negative polarity after connecting by lead between the described chip.
Described base is provided with insulating trip, and described led chip leads to insulating trip after serial or parallel connection connects.
The upper surface of described base is provided with a reflector layer of electroplating.
Described base and reflector are circle.
Described insulating trip is a glass fiber sheets, and insulating trip is provided with printed circuit.
The present invention has following advantage: be coated with a hard layer of silica gel around adopting above-mentioned surface with led chip, also be coated with the double colloidal layers structure of glue and fluorescent material mixed layer in the outside of this hard layer of silica gel, can save production cost greatly, and its light efficiency loss is few, helps large batch of suitability for industrialized production.
[description of drawings]
The present invention is further illustrated in conjunction with the embodiments with reference to the accompanying drawings.
Fig. 1 is the overall structure schematic diagram of embodiments of the invention one.
Fig. 2 is the A-A cutaway view of Fig. 1.
[embodiment]
The present invention will be described in detail below in conjunction with specific embodiment.
Seeing also Fig. 1 to shown in Figure 2, is described led light source module encapsulation construction of the present invention, comprises base 11, led chip 12, insulating cement 13, glue and fluorescent material mixed layer 14, reflector 15, wiring board 16, hard layer of silica gel 17, lead 18.
The central authorities of described base 11 are provided with a reflector 15, base 11 and reflector 15 in the present embodiment are circle, described base 11 is that copper is one-body molded, its upper surface has a reflector layer of electroplating, this reflector layer is a silver coating in the present embodiment, the bottom of reflector 15 is provided with some led chips 12, these led chips 12 are bonded at the bottom of reflector 15 by insulating cement, be coated with a hard layer of silica gel 17 around the surface of described led chip 12, also be coated with glue and fluorescent material mixed layer 14 in the outside of this hard layer of silica gel 17, also be reserved with the sulculus that holds wiring board 16 on the base 11, after being installed in wiring board 16 in this sulculus, draw behind serial or parallel connection with lead 18 between described some led chips 12 and be connected to wiring board 16, form both positive and negative polarity.
In the foregoing description, described base also is not limited to circle, can do shapes such as squarely or strip, still can reach aforesaid goal of the invention.
Claims (5)
1. led light source module encapsulation construction, comprise that one has the base of reflector, the reflector bottom center of base is provided with at least one led chip, this led chip is bonded at the bottom of reflector by insulating cement, it is characterized in that: be coated with a hard layer of silica gel around the surface of described led chip, also be coated with glue and fluorescent material mixed layer in the outside of this hard layer of silica gel, draw both positive and negative polarity after connecting by lead between the described chip.
2. led light source module encapsulation construction according to claim 1 is characterized in that: described base is provided with insulating trip, and described led chip leads to insulating trip after serial or parallel connection connects.
3. led light source module encapsulation construction according to claim 1 is characterized in that: the upper surface of described base is provided with a reflector layer of electroplating.
4. led light source module encapsulation construction according to claim 1 is characterized in that: described base and reflector are circle.
5. led light source module encapsulation construction according to claim 2 is characterized in that: described insulating trip is a glass fiber sheets, and insulating trip is provided with printed circuit.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102995730A CN102005445A (en) | 2010-09-30 | 2010-09-30 | Encapsulation structure of light emitting diode (LED) light source module |
| PCT/CN2010/078620 WO2012040956A1 (en) | 2010-09-30 | 2010-11-11 | Packaging structure of led lighting source module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102995730A CN102005445A (en) | 2010-09-30 | 2010-09-30 | Encapsulation structure of light emitting diode (LED) light source module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102005445A true CN102005445A (en) | 2011-04-06 |
Family
ID=43812677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102995730A Pending CN102005445A (en) | 2010-09-30 | 2010-09-30 | Encapsulation structure of light emitting diode (LED) light source module |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102005445A (en) |
| WO (1) | WO2012040956A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290410A (en) * | 2011-08-16 | 2011-12-21 | 陈炜旻 | LED (light emitting diode) area light source and manufacturing method thereof |
| CN102299247A (en) * | 2011-05-20 | 2011-12-28 | 浙江英特来光电科技有限公司 | Outdoor LED module group |
| CN102306695A (en) * | 2011-09-09 | 2012-01-04 | 福建省万邦光电科技有限公司 | Ceramic-layer-plated base for LED (light emitting diode) light source single-cup module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070287208A1 (en) * | 2006-05-17 | 2007-12-13 | 3M Innovative Properties Company | Method of Making Light Emitting Device With Multilayer Silicon-Containing Encapsulant |
| CN101399304A (en) * | 2007-09-27 | 2009-04-01 | 海立尔股份有限公司 | Manufacturing method for LED with multi-layered optical lens and construction thereof |
| CN201820757U (en) * | 2010-09-30 | 2011-05-04 | 福建省万邦光电科技有限公司 | LED (light-emitting diode) light source module packaging structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7405433B2 (en) * | 2005-02-22 | 2008-07-29 | Avago Technologies Ecbu Ip Pte Ltd | Semiconductor light emitting device |
-
2010
- 2010-09-30 CN CN2010102995730A patent/CN102005445A/en active Pending
- 2010-11-11 WO PCT/CN2010/078620 patent/WO2012040956A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070287208A1 (en) * | 2006-05-17 | 2007-12-13 | 3M Innovative Properties Company | Method of Making Light Emitting Device With Multilayer Silicon-Containing Encapsulant |
| CN101399304A (en) * | 2007-09-27 | 2009-04-01 | 海立尔股份有限公司 | Manufacturing method for LED with multi-layered optical lens and construction thereof |
| CN201820757U (en) * | 2010-09-30 | 2011-05-04 | 福建省万邦光电科技有限公司 | LED (light-emitting diode) light source module packaging structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299247A (en) * | 2011-05-20 | 2011-12-28 | 浙江英特来光电科技有限公司 | Outdoor LED module group |
| CN102290410A (en) * | 2011-08-16 | 2011-12-21 | 陈炜旻 | LED (light emitting diode) area light source and manufacturing method thereof |
| CN102290410B (en) * | 2011-08-16 | 2016-09-07 | 陈炜旻 | LED area light source and manufacture method thereof |
| CN102306695A (en) * | 2011-09-09 | 2012-01-04 | 福建省万邦光电科技有限公司 | Ceramic-layer-plated base for LED (light emitting diode) light source single-cup module |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012040956A1 (en) | 2012-04-05 |
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| PB01 | Publication | ||
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| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110406 |