Nothing Special   »   [go: up one dir, main page]

CN101995301A - Temperature detection circuit of integrated circuit and calibration method thereof - Google Patents

Temperature detection circuit of integrated circuit and calibration method thereof Download PDF

Info

Publication number
CN101995301A
CN101995301A CN2009100577696A CN200910057769A CN101995301A CN 101995301 A CN101995301 A CN 101995301A CN 2009100577696 A CN2009100577696 A CN 2009100577696A CN 200910057769 A CN200910057769 A CN 200910057769A CN 101995301 A CN101995301 A CN 101995301A
Authority
CN
China
Prior art keywords
temperature
tap
high temperature
resistance string
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2009100577696A
Other languages
Chinese (zh)
Other versions
CN101995301B (en
Inventor
唐成伟
王梓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Original Assignee
Shanghai Hua Hong NEC Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Hua Hong NEC Electronics Co Ltd filed Critical Shanghai Hua Hong NEC Electronics Co Ltd
Priority to CN2009100577696A priority Critical patent/CN101995301B/en
Publication of CN101995301A publication Critical patent/CN101995301A/en
Application granted granted Critical
Publication of CN101995301B publication Critical patent/CN101995301B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

The invention discloses a temperature detection circuit of an integrated circuit, which is characterized in that a resistor string connected with a PTC (positive temperature coefficient) current source is provided with a safe high-temperature resistor-string tap, a safe low-temperature resistor-string tap, a calibrating high-temperature resistor-string tap, a calibrating low-temperature resistor-string tap and a selective switch circuit; when needs to calibrate the temperature detection circuit of the integrated circuit, the calibration method comprises the following steps: controlling the calibrating high-temperature resistor-string tap to connect with a negative input end of a high-temperature comparator and controlling the calibrating low-temperature resistor-string tap to connect with a positive input end of a low-temperature comparator by external selective switch controlled signals; determining a calibrating high-temperature trimming value at a calibrating high-temperature, and determining a calibrating low-temperature trimming value at a calibrating low-temperature; averaging the calibrating high-temperature trimming value and the calibrating low-temperature trimming value, and taking the obtained average value as the trimming value of a trimmer resistor r, thereby realizing the calibration on the temperature detection circuit of the integrated circuit. The temperature detection circuit of the integrated circuit has the advantages of convenient calibration.

Description

Integrated circuit temperature sensing circuit and calibration steps thereof
Technical field
The present invention relates to semiconductor technology, particularly a kind of integrated circuit temperature sensing circuit and calibration steps thereof.
Background technology
In order to guarantee that integrated circuit is operated under the safe temperature, need to detect the temperature in the integrated circuit, when exceeding the safe temperature scope, the temperature in the integrated circuit provides alerting signal.For this reason, usually temperature sensing circuit need be set in integrated circuit, principle as shown in Figure 1, comprise a positive temperature coefficient (PTC) current source, one resistance string R2, one negative temperature coefficient potential circuit, two comparers, described positive temperature coefficient (PTC) current source meets a resistance string R2, on described resistance string, be provided with tap of safe high temperature resistance string and the tap of safe low-temperature resistance string, one of described two comparer are as the low temperature comparer, one as the high temperature comparer, the described negative temperature coefficient potential circuit of described high temperature comparer positive input termination output terminal, and negative input end connects the tap of safe high temperature resistance string, described low temperature comparer negative input end connects described negative temperature coefficient potential circuit output terminal, the tap of positive input termination safety low-temperature resistance string; Under design point, when the temperature in the integrated circuit is safe high temperature, voltage Vptath in the tap of safe high temperature resistance string equals the voltage Vbe of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is lower than safe high temperature, voltage Vptath in the tap of safe high temperature resistance string is lower than the voltage Vbe of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is higher than safe high temperature, voltage Vptath in the tap of safe high temperature resistance string is higher than the voltage Vbe of described negative temperature coefficient potential circuit output terminal, described high temperature comparer output this moment high temperature alarm signal, when the temperature in the integrated circuit is safe low temperature, voltage Vptatl in the tap of safe low-temperature resistance string equals the voltage Vbe of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is higher than safe low temperature, voltage Vptatl in the tap of safe low-temperature resistance string is higher than the voltage Vbe of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is lower than safe low temperature, voltage Vptatl in the tap of safe low-temperature resistance string is lower than the voltage Vbe of described negative temperature coefficient potential circuit output terminal, described low temperature comparer output this moment low-temperature warning signal.
But owing to be subjected to the influence of process deviation, inevitably can bring the offset error of temperature sensing circuit detected temperatures, detected temperatures accurately, need calibrate it, for this reason, serial connection one semifixed resistor r between described resistance string R2 is with ground, described integrated circuit temperature sensing circuit can be by changing external fine setting control signal fine setting (trimming) value, change the resistance of described semifixed resistor r, to calibrate.Calibration Method is under safety high-pressure temperature and safe low pressure temperature, by changing external fine setting control signal fine setting (trimming) value, check whether described two comparers output has logic level change, thereby determine suitable fine setting (trimming) value, resistance to described semifixed resistor r is finely tuned, and realizes the calibration of temperature sensing circuit.But such calibration has two problems: the one, and the temperature that detect is low often to reach-40 ℃ safe low pressure temperature or up to 120 ℃ of safety high-pressure temperature etc., such temperature to be on board, tested and very big difficulty can be brought, even may not test, the 2nd, if a plurality of detected temperatures are arranged, must under each temperature, test, bring very big workload, increased testing cost.
One common integrated circuit temperature sensing circuit as shown in Figure 2, integrated circuit temperature sensing circuit among Fig. 2, comprise metal-oxide-semiconductor proportional current mirror, operational amplifier A 1, the one PNP manages Q1, the 2nd PNP manages Q2, the 3rd PNP manages Q3, first resistance R 1, resistance string R2, semifixed resistor r, two comparers, described MOS proportional current mirror comprises the PMOS first metal-oxide-semiconductor MP1, the PMOS second metal-oxide-semiconductor MP2, PMOS the 3rd metal-oxide-semiconductor MP3, PMOS the 4th metal-oxide-semiconductor MP4, the first metal-oxide-semiconductor MP1 wherein, the second metal-oxide-semiconductor MP2, the 3rd metal-oxide-semiconductor MP3, the breadth length ratio example of the 4th metal-oxide-semiconductor MP4 is 1: 1: k: 1, k is a proportionality constant, their source electrode all connects voltage source, their grid all connects together and connects described operational amplifier output terminal, the drain electrode of the first metal-oxide-semiconductor MP1 connects an end of described operational amplifier A 1 positive input terminal and first resistance R 1, the emitter of another termination the one PNP pipe Q1 of first resistance R 1, the drain electrode of the second metal-oxide-semiconductor MP2 connects the emitter of described operational amplifier A 1 negative input end and the 2nd PNP pipe Q2, the base stage of the one PNP pipe Q1 and the 2nd PNP pipe Q2, grounded collector, the drain electrode of PMOS the 3rd metal-oxide-semiconductor MP3 connects described resistance string R2 one end, described semifixed resistor r one end of another termination of described resistance string R2, described semifixed resistor r other end ground connection, the drain electrode output positive temperature coefficient (PTC) electric current of described PMOS the 3rd metal-oxide-semiconductor MP3, PMOS the 4th metal-oxide-semiconductor MP4 drain electrode connects the 3rd PNP pipe Q3 emitter, base stage and the grounded collector of the 3rd PNP pipe Q3, the negative temperature coefficient voltage Vbe of the about 0.7V of emitter output of described the 3rd PNP pipe Q3.Described integrated circuit temperature sensing circuit, the external fine setting control signal of energy changes the resistance that fine setting control signal trim values can change described semifixed resistor r.Described resistance string R2 is provided with tap of safe high temperature resistance string and the tap of safe low-temperature resistance string, one of described two comparer are as the low temperature comparer, one as the high temperature comparer, described high temperature comparer negative input end connects the safe high temperature resistance string tap of described resistance string R2, the emitter of described the 3rd PNP pipe of positive input termination Q3, the safe low-temperature resistance string tap of the described resistance string R2 of described low temperature comparer positive input termination, negative input end connect the emitter of described the 3rd PNP pipe Q3.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of integrated circuit temperature sensing circuit and calibration steps thereof, and it calibrates convenient.
For solving the problems of the technologies described above, a kind of integrated circuit temperature sensing circuit of the present invention comprises a positive temperature coefficient (PTC) current source, a resistance string, a semifixed resistor, a negative temperature coefficient potential circuit, a selected on-off circuit, low temperature comparer and high temperature comparer;
Described positive temperature coefficient (PTC) current source connects described resistance string one end, described semifixed resistor one end of another termination of described resistance string, described semifixed resistor other end ground connection, on described resistance string, be provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string, the tap of safe high temperature resistance string is arrived the resistance of described semifixed resistor end less than safety low-temperature resistance string tap resistance to described semifixed resistor end less than calibrating the resistance of high temperature resistance string tap to described semifixed resistor end less than the tap of calibration low-temperature resistance string to the resistance of described semifixed resistor end, the tap of described safe high temperature resistance string, the tap of calibration high temperature resistance string connects described high temperature comparer negative input end through described selected on-off circuit, the tap of described safe low-temperature resistance string, the tap of calibration low-temperature resistance string connects described low temperature comparer positive input terminal through described selected on-off circuit, described negative temperature coefficient potential circuit output termination described high temperature comparer positive input terminal and low temperature comparer negative input end;
Described integrated circuit temperature sensing circuit, the external fine setting control signal of energy changes the resistance that external fine setting control signal trim values can change described semifixed resistor,
Described integrated circuit temperature sensing circuit, the external selector switch control signal of energy, can control described selected on-off circuit by external selector switch control signal and connect described high temperature comparer negative input end and calibration high temperature resistance string tap and be connected described low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string, perhaps control described selected on-off circuit and connect described high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected described low temperature comparer positive input terminal and the tap of safe low-temperature resistance string.
Under design point, when the temperature in the integrated circuit is safe high temperature, voltage in the tap of safe high temperature resistance string equals the voltage of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is safe low temperature, voltage in the tap of safe low-temperature resistance string equals the voltage of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is calibration high temperature, voltage in the tap of calibration high temperature resistance string equals the voltage of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit was calibration low temperature, the voltage in the tap of calibration low-temperature resistance string equaled the voltage of described negative temperature coefficient potential circuit output terminal.
The present invention also provides a kind of calibration steps of described integrated circuit temperature sensing circuit, calibrates the tap of low-temperature resistance string by the selector switch control signal control calibration high temperature resistance string tap in the external world with the connection of high temperature comparer negative input end, control and connects with low temperature comparer positive input terminal; Under calibration high temperature, make described high temperature comparer output high temperature alarm signal, thereby determine a calibration high temperature trim values by the trim values that changes external fine setting control signal; Under calibration low temperature, make described low temperature comparer output low-temperature warning signal by the trim values that changes external fine setting control signal, thereby determine a calibration low temperature trim values, described calibration low temperature trim values and calibration high temperature trim values are averaged, as trim values to described semifixed resistor, resistance to described semifixed resistor is finely tuned, and realizes the calibration to the integrated circuit temperature sensing circuit.
Calibration high temperature is lower than safe high temperature, and calibration low temperature is higher than safe low temperature, and calibration high temperature is higher than calibration low temperature.
Integrated circuit temperature sensing circuit of the present invention, the resistance string that connects the positive temperature coefficient (PTC) current source is provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string, and selected on-off circuit is set, when needs carry out timing to the integrated circuit temperature sensing circuit, selector switch control signal control calibration high temperature resistance string tap by the external world connects with high temperature comparer negative input end, the tap of control calibration low-temperature resistance string connects with low temperature comparer positive input terminal, under calibration high temperature, make described high temperature comparer output high temperature alarm signal, thereby determine calibration high temperature fine setting (trimming) value by the trim values that changes external fine setting control signal; Under calibration low temperature, make described low temperature comparer output low-temperature warning signal by the trim values that changes external fine setting control signal, thereby determine calibration low temperature fine setting (trimming) value, described calibration low temperature fine setting (trimming) value and calibration high temperature fine setting (trimming) value are averaged, as trim values to described semifixed resistor r, resistance to described semifixed resistor r is finely tuned, and realizes the calibration to the integrated circuit temperature sensing circuit.Because the linearity of temperature sensing circuit, after specific probe temperature calibration, the temperature that needs to detect is also calibrated thereupon, integrated circuit temperature sensing circuit of the present invention, because calibration low temperature and calibration high temperature approach the board probe temperature, thereby can realize calibration to the integrated circuit temperature sensing circuit easily.
Description of drawings
Below in conjunction with the drawings and the specific embodiments the present invention is described in further detail.
Fig. 1 is a temperature sensing circuit schematic diagram in the integrated circuit;
Fig. 2 is a common integrated circuit temperature sensing circuit figure;
Fig. 3 is an integrated circuit temperature sensing circuit schematic diagram of the present invention;
Fig. 4 is integrated circuit temperature sensing circuit one an embodiment synoptic diagram of the present invention.
Embodiment
Integrated circuit temperature sensing circuit of the present invention, as shown in Figure 3, temperature sensing circuit is set in integrated circuit, comprise a positive temperature coefficient (PTC) current source, one resistance string R2, one semifixed resistor r, one negative temperature coefficient potential circuit, one selected on-off circuit, low temperature comparer and high temperature comparer two comparers, described positive temperature coefficient (PTC) current source connects described resistance string R2 one end, described semifixed resistor r one end of another termination of described resistance string R2, described semifixed resistor r other end ground connection, on described resistance string R2, be provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string, the resistance that the resistance that the tap of safe high temperature resistance string is held to described semifixed resistor r less than the tap of calibration high temperature resistance string to the resistance of described semifixed resistor r end is held to described semifixed resistor r less than the tap of safety low-temperature resistance string to the resistance of described semifixed resistor r end less than the tap of calibration low-temperature resistance string, the tap of described safe high temperature resistance string, the tap of calibration high temperature resistance string connects described high temperature comparer negative input end through selected on-off circuit, the tap of described safe low-temperature resistance string, the tap of calibration low-temperature resistance string connects described low temperature comparer positive input terminal through selected on-off circuit, described negative temperature coefficient potential circuit output termination described high temperature comparer positive input terminal and low temperature comparer negative input end;
Described integrated circuit temperature sensing circuit, the external fine setting control signal of energy changes the resistance that external fine setting control signal trim values can change described semifixed resistor r; The external selector switch control signal of energy, when needs are calibrated the integrated circuit temperature sensing circuit, connect described high temperature comparer negative input end and calibrate high temperature resistance string tap and be connected described low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string by external selector switch control signal control selected on-off circuit, when needs carry out temperature detection to integrated circuit, connect described high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected described low temperature comparer positive input terminal and the tap of safe low-temperature resistance string by external selector switch control signal control selected on-off circuit.
Under design point, when the temperature in the integrated circuit is safe high temperature, voltage Vptath in the tap of safe high temperature resistance string equals the voltage Vbe of described negative temperature coefficient potential circuit output terminal, voltage Vptath in the tap of safe high temperature resistance string is lower than the voltage Vbe of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is higher than safe high temperature, voltage Vptath in the tap of safe high temperature resistance string is higher than the voltage Vbe of described negative temperature coefficient potential circuit output terminal, described high temperature comparer output this moment high temperature alarm signal, when the temperature in the integrated circuit is safe low temperature, voltage Vptatl in the tap of safe low-temperature resistance string equals the voltage Vbe of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is higher than safe low temperature, voltage Vptatl in the tap of safe low-temperature resistance string is higher than the voltage Vbe of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is lower than safe low temperature, voltage Vptatl in the tap of safe low-temperature resistance string is lower than the voltage Vbe of described negative temperature coefficient potential circuit output terminal, described low temperature comparer output this moment low-temperature warning signal.
Under design point, when the temperature in the integrated circuit is calibration high temperature, voltage Vtesth in the tap of calibration high temperature resistance string equals the voltage Vbe of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit was calibration low temperature, the voltage Vtestl in the tap of calibration low-temperature resistance string equaled the voltage Vbe of described negative temperature coefficient potential circuit output terminal.Calibration high temperature is lower than safe high temperature, and calibration low temperature is higher than safe low temperature, and calibration high temperature is higher than calibration low temperature, calibrates high temperature usually a little more than the board probe temperature, and calibration low temperature is a little less than the board probe temperature.The good embodiment of one religion, the safe high temperature of integrated circuit is 120 ℃, and safe low temperature is-40 ℃, and the board probe temperature is 55 ℃, and calibration high temperature is got 62 ℃, and calibration low temperature is got 48 ℃.
When needs carry out temperature detection to integrated circuit, connect described high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected described low temperature comparer positive input terminal and the tap of safe low-temperature resistance string by external selector switch control signal control selected on-off circuit.So, when integrated circuit is carried out temperature detection, when the temperature in the integrated circuit is higher than safe high temperature, voltage Vptath in the tap of described safe high temperature resistance string is higher than the voltage Vbe of described negative temperature coefficient potential circuit output terminal, described high temperature comparer output high temperature alarm signal, when the temperature in the integrated circuit is lower than safe low temperature, voltage Vptath in the tap of described safe low-temperature resistance string is lower than the voltage Vbe of described negative temperature coefficient potential circuit output terminal, described low temperature comparer output low-temperature warning signal.
When needs are calibrated the integrated circuit temperature sensing circuit, connect described high temperature comparer negative input end and calibrate high temperature resistance string tap and be connected described low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string by external selector switch control signal control selected on-off circuit; Under calibration high temperature, change external fine setting control signal fine setting (trimming) value, when described high temperature comparer is exported the high temperature alarm signal, determine calibration high temperature fine setting (trimming) value; Under calibration low temperature, when described low temperature comparer is exported the low temperature alarm signal, determine calibration low temperature fine setting (trimming) value; Described calibration low temperature fine setting (trimming) value and calibration high temperature fine setting (trimming) value are averaged,, the resistance of described semifixed resistor r is finely tuned, realize calibration the integrated circuit temperature sensing circuit as trim values to described semifixed resistor r.
Integrated circuit temperature sensing circuit of the present invention, one embodiment as shown in Figure 4, integrated circuit temperature sensing circuit among Fig. 4, comprise metal-oxide-semiconductor proportional current mirror, one operational amplifier A 1, the one PNP manages Q1, the 2nd PNP manages Q2, the 3rd PNP manages Q3, first resistance R 1, one resistance string R2, one semifixed resistor r, one selected on-off circuit, two comparers, described MOS proportional current mirror comprises the PMOS first metal-oxide-semiconductor MP1, the PMOS second metal-oxide-semiconductor MP2, PMOS the 3rd metal-oxide-semiconductor MP3, PMOS the 4th metal-oxide-semiconductor MP4, the first metal-oxide-semiconductor MP1 wherein, the second metal-oxide-semiconductor MP2, the 3rd metal-oxide-semiconductor MP3, the breadth length ratio example of the 4th metal-oxide-semiconductor MP4 is 1: 1: k: 1, k is a proportionality constant, their source electrode all connects voltage source, their grid all connects together and connects described operational amplifier output terminal, the drain electrode of the first metal-oxide-semiconductor MP1 connects an end of described operational amplifier A 1 positive input terminal and first resistance R 1, the emitter of another termination the one PNP pipe Q1 of first resistance R 1, the drain electrode of the second metal-oxide-semiconductor MP2 connects the emitter of described operational amplifier A 1 negative input end and the 2nd PNP pipe Q2, the base stage of the one PNP pipe Q1 and the 2nd PNP pipe Q2, grounded collector, the drain electrode of PMOS the 3rd metal-oxide-semiconductor MP3 connects described resistance string R2 one end, described semifixed resistor r one end of another termination of described resistance string R2, described semifixed resistor r other end ground connection, the drain electrode output positive temperature coefficient (PTC) electric current of described PMOS the 3rd metal-oxide-semiconductor MP3, PMOS the 4th metal-oxide-semiconductor MP4 drain electrode connects the 3rd PNP pipe Q3 emitter, base stage and the grounded collector of the 3rd PNP pipe Q3, the negative temperature coefficient voltage Vbe of the about 0.7V of emitter output of described the 3rd PNP pipe Q3.Described integrated circuit temperature sensing circuit, the external fine setting control signal of energy, change the resistance that fine setting control signal trim values can change described semifixed resistor r, described resistance string R2 is provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string, the tap of described safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string connects described selector switch, one of described two comparer are as the low temperature comparer, one as the high temperature comparer, described high temperature comparer negative input end, the described selector switch of described low temperature comparer positive input termination, described high temperature comparer positive input terminal, described low temperature comparer negative input end connects the emitter of described the 3rd PNP pipe Q3, the external selector switch control signal of described selected on-off circuit, when needs are calibrated the integrated circuit temperature sensing circuit, connect described high temperature comparer negative input end and calibrate high temperature resistance string tap and be connected described low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string by external selector switch control signal control selected on-off circuit, when needs carry out temperature detection to integrated circuit, connect described high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected described low temperature comparer positive input terminal and the tap of safe low-temperature resistance string by external selector switch control signal control selected on-off circuit.
Integrated circuit temperature sensing circuit of the present invention, the resistance string that connects the positive temperature coefficient (PTC) current source is provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string, and selected on-off circuit is set, when needs carry out timing to the integrated circuit temperature sensing circuit, selector switch control signal control calibration high temperature resistance string tap by the external world connects with high temperature comparer negative input end, the tap of control calibration low-temperature resistance string connects with low temperature comparer positive input terminal, under calibration high temperature, make described high temperature comparer output high temperature alarm signal, thereby determine calibration high temperature fine setting (trimming) value by the trim values that changes external fine setting control signal; Under calibration low temperature, make described low temperature comparer output low-temperature warning signal by the trim values that changes external fine setting control signal, thereby determine calibration low temperature fine setting (trimming) value, described calibration low temperature fine setting (trimming) value and calibration high temperature fine setting (trimming) value are averaged, as trim values to described semifixed resistor r, resistance to described semifixed resistor r is finely tuned, and realizes the calibration to the integrated circuit temperature sensing circuit.Because the linearity of temperature sensing circuit, after specific probe temperature calibration, the temperature that needs to detect is also calibrated thereupon, integrated circuit temperature sensing circuit of the present invention, because calibration low temperature and calibration high temperature approach the board probe temperature, thereby can realize calibration to the integrated circuit temperature sensing circuit easily.

Claims (6)

1. an integrated circuit temperature sensing circuit is characterized in that, comprises a positive temperature coefficient (PTC) current source, a resistance string, a semifixed resistor, a negative temperature coefficient potential circuit, a selected on-off circuit, low temperature comparer and high temperature comparer;
Described positive temperature coefficient (PTC) current source connects described resistance string one end, described semifixed resistor one end of another termination of described resistance string, described semifixed resistor other end ground connection, on described resistance string, be provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string, the tap of safe high temperature resistance string is arrived the resistance of described semifixed resistor end less than safety low-temperature resistance string tap resistance to described semifixed resistor end less than calibrating the resistance of high temperature resistance string tap to described semifixed resistor end less than the tap of calibration low-temperature resistance string to the resistance of described semifixed resistor end, the tap of described safe high temperature resistance string, the tap of calibration high temperature resistance string connects described high temperature comparer negative input end through described selected on-off circuit, the tap of described safe low-temperature resistance string, the tap of calibration low-temperature resistance string connects described low temperature comparer positive input terminal through described selected on-off circuit, described negative temperature coefficient potential circuit output termination described high temperature comparer positive input terminal and low temperature comparer negative input end;
Described integrated circuit temperature sensing circuit, the external fine setting control signal of energy changes the resistance that external fine setting control signal trim values can change described semifixed resistor,
Described integrated circuit temperature sensing circuit, the external selector switch control signal of energy, can control described selected on-off circuit by external selector switch control signal and connect described high temperature comparer negative input end and calibration high temperature resistance string tap and be connected described low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string, perhaps control described selected on-off circuit and connect described high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected described low temperature comparer positive input terminal and the tap of safe low-temperature resistance string.
2. integrated circuit temperature sensing circuit according to claim 1, it is characterized in that, under design point, when the temperature in the integrated circuit is safe high temperature, voltage in the tap of safe high temperature resistance string equals the voltage of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is safe low temperature, voltage in the tap of safe low-temperature resistance string equals the voltage of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit is calibration high temperature, voltage in the tap of calibration high temperature resistance string equals the voltage of described negative temperature coefficient potential circuit output terminal, when the temperature in the integrated circuit was calibration low temperature, the voltage in the tap of calibration low-temperature resistance string equaled the voltage of described negative temperature coefficient potential circuit output terminal.
3. integrated circuit temperature sensing circuit according to claim 1 and 2, it is characterized in that, comprise metal-oxide-semiconductor proportional current mirror, an operational amplifier, PNP pipe, the 2nd PNP pipe, the 3rd PNP pipe, first resistance, a resistance string, a semifixed resistor, a selected on-off circuit, two comparers;
Described MOS proportional current mirror comprises PMOS first metal-oxide-semiconductor, PMOS second metal-oxide-semiconductor, PMOS the 3rd metal-oxide-semiconductor, PMOS the 4th metal-oxide-semiconductor, their source electrode all connects voltage source, their grid all connects together and connects described operational amplifier output terminal, the drain electrode of first metal-oxide-semiconductor connects an end of the described operational amplifier positive input terminal and first resistance, the emitter of another termination the one PNP pipe of first resistance, the drain electrode of second metal-oxide-semiconductor connects the emitter of described operational amplifier negative input end and the 2nd PNP pipe, the base stage of the one PNP pipe and the 2nd PNP pipe, grounded collector, the drain electrode of PMOS the 3rd metal-oxide-semiconductor connects described resistance string one end, described semifixed resistor one end of another termination of described resistance string, described semifixed resistor other end ground connection, the drain electrode output positive temperature coefficient (PTC) electric current of described PMOS the 3rd metal-oxide-semiconductor, the drain electrode of PMOS the 4th metal-oxide-semiconductor connects the 3rd PNP pipe emitter, the base stage of the 3rd PNP pipe and grounded collector, the emitter output negative temperature coefficient voltage of described the 3rd PNP pipe;
Described integrated circuit temperature sensing circuit, the external fine setting control signal of energy changes the resistance that fine setting control signal trim values can change described semifixed resistor;
Described resistance string is provided with the tap of safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string, the tap of safe high temperature resistance string is arrived the resistance of described semifixed resistor end less than safety low-temperature resistance string tap resistance to described semifixed resistor end less than calibrating the resistance of high temperature resistance string tap to described semifixed resistor end less than the tap of calibration low-temperature resistance string to the resistance of described semifixed resistor end, the tap of described safe high temperature resistance string, the tap of safe low-temperature resistance string, the tap of calibration high temperature resistance string, the tap of calibration low-temperature resistance string connects described selector switch, one of described two comparer are as the low temperature comparer, one as the high temperature comparer, described high temperature comparer negative input end, the described selector switch of described low temperature comparer positive input termination, described high temperature comparer positive input terminal, described low temperature comparer negative input end connects the emitter of described the 3rd PNP pipe;
The external selector switch control signal of described selected on-off circuit, can control selected on-off circuit and connect described high temperature comparer negative input end and calibration high temperature resistance string tap and be connected described low temperature comparer positive input terminal and the tap of calibration low-temperature resistance string, perhaps control selected on-off circuit and connect described high temperature comparer negative input end with the tap of safe high temperature resistance string and be connected described low temperature comparer positive input terminal and the tap of safe low-temperature resistance string.
4. the calibration steps of the described integrated circuit temperature sensing circuit of claim 1, it is characterized in that, calibrate the tap of low-temperature resistance string by the selector switch control signal control calibration high temperature resistance string tap in the external world with the connection of high temperature comparer negative input end, control and connect with low temperature comparer positive input terminal; Under calibration high temperature, make described high temperature comparer output high temperature alarm signal, thereby determine a calibration high temperature trim values by the trim values that changes external fine setting control signal; Under calibration low temperature, make described low temperature comparer output low-temperature warning signal by the trim values that changes external fine setting control signal, thereby determine a calibration low temperature trim values, described calibration low temperature trim values and calibration high temperature trim values are averaged, as trim values to described semifixed resistor, resistance to described semifixed resistor is finely tuned, and realizes the calibration to the integrated circuit temperature sensing circuit.
5. the calibration steps of integrated circuit temperature sensing circuit according to claim 4 is characterized in that, calibration high temperature is lower than safe high temperature, and calibration low temperature is higher than safe low temperature, and calibration high temperature is higher than calibration low temperature.
6. the calibration steps of integrated circuit temperature sensing circuit according to claim 5 is characterized in that, the safe high temperature of integrated circuit is 120 ℃, and safe low temperature is-40 ℃, and calibration high temperature is got 62 ℃, and calibration low temperature is got 48 ℃.
CN2009100577696A 2009-08-20 2009-08-20 Temperature detection circuit of integrated circuit and calibration method thereof Active CN101995301B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009100577696A CN101995301B (en) 2009-08-20 2009-08-20 Temperature detection circuit of integrated circuit and calibration method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009100577696A CN101995301B (en) 2009-08-20 2009-08-20 Temperature detection circuit of integrated circuit and calibration method thereof

Publications (2)

Publication Number Publication Date
CN101995301A true CN101995301A (en) 2011-03-30
CN101995301B CN101995301B (en) 2012-08-01

Family

ID=43785761

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009100577696A Active CN101995301B (en) 2009-08-20 2009-08-20 Temperature detection circuit of integrated circuit and calibration method thereof

Country Status (1)

Country Link
CN (1) CN101995301B (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050423A (en) * 2012-12-20 2013-04-17 上海宏力半导体制造有限公司 Wafer temperature detection method
CN104422542A (en) * 2013-08-28 2015-03-18 东莞赛微微电子有限公司 Temperature detection circuit and electronic equipment
CN104515611A (en) * 2013-09-29 2015-04-15 中兴通讯股份有限公司 Temperature sensing circuit and temperature sensor
CN104833439A (en) * 2015-04-07 2015-08-12 青岛歌尔声学科技有限公司 Temperature detection circuit and electronic device with same
CN105606240A (en) * 2014-11-11 2016-05-25 精工半导体有限公司 Temperature detection circuit and semiconductor device
CN106468600A (en) * 2015-08-19 2017-03-01 中芯国际集成电路制造(上海)有限公司 Correcting circuit and device, temperature sensing circuit and method, method of testing
CN107422777A (en) * 2017-05-16 2017-12-01 四川和芯微电子股份有限公司 Ptat current source
CN110967128A (en) * 2018-09-28 2020-04-07 台湾积体电路制造股份有限公司 Thermal sensor and method of temperature measurement
CN113125024A (en) * 2019-12-31 2021-07-16 钜泉光电科技(上海)股份有限公司 Low-noise temperature detection circuit and method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9465755B2 (en) 2011-07-18 2016-10-11 Hewlett Packard Enterprise Development Lp Security parameter zeroization

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7340366B2 (en) * 2004-03-04 2008-03-04 Atmel Corporation Method and apparatus of temperature compensation for integrated circuit chip using on-chip sensor and computation means
US7102417B2 (en) * 2004-11-05 2006-09-05 International Business Machines Corporation Integrated circuit die including a temperature detection circuit, and system and methods for calibrating the temperature detection circuit
US7410293B1 (en) * 2006-03-27 2008-08-12 Altera Corporation Techniques for sensing temperature and automatic calibration on integrated circuits
US7524107B1 (en) * 2006-09-29 2009-04-28 National Semiconductor Corporation Dual purpose output thermostat
CN101452048B (en) * 2007-11-30 2011-08-24 上海华虹Nec电子有限公司 Integrated circuit chip temperature test device and method

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050423B (en) * 2012-12-20 2016-05-04 上海华虹宏力半导体制造有限公司 The detection method of wafer temperature
CN103050423A (en) * 2012-12-20 2013-04-17 上海宏力半导体制造有限公司 Wafer temperature detection method
CN104422542A (en) * 2013-08-28 2015-03-18 东莞赛微微电子有限公司 Temperature detection circuit and electronic equipment
CN104422542B (en) * 2013-08-28 2017-11-14 东莞赛微微电子有限公司 A kind of temperature sensing circuit and electronic equipment
CN104515611A (en) * 2013-09-29 2015-04-15 中兴通讯股份有限公司 Temperature sensing circuit and temperature sensor
CN105606240B (en) * 2014-11-11 2020-05-19 艾普凌科有限公司 Temperature detection circuit and semiconductor device
CN105606240A (en) * 2014-11-11 2016-05-25 精工半导体有限公司 Temperature detection circuit and semiconductor device
CN104833439A (en) * 2015-04-07 2015-08-12 青岛歌尔声学科技有限公司 Temperature detection circuit and electronic device with same
CN106468600A (en) * 2015-08-19 2017-03-01 中芯国际集成电路制造(上海)有限公司 Correcting circuit and device, temperature sensing circuit and method, method of testing
CN106468600B (en) * 2015-08-19 2019-02-12 中芯国际集成电路制造(上海)有限公司 Correcting circuit and device, temperature sensing circuit and method, test method
CN107422777A (en) * 2017-05-16 2017-12-01 四川和芯微电子股份有限公司 Ptat current source
CN110967128A (en) * 2018-09-28 2020-04-07 台湾积体电路制造股份有限公司 Thermal sensor and method of temperature measurement
US11493389B2 (en) 2018-09-28 2022-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Low temperature error thermal sensor
CN113125024A (en) * 2019-12-31 2021-07-16 钜泉光电科技(上海)股份有限公司 Low-noise temperature detection circuit and method
CN113125024B (en) * 2019-12-31 2023-12-29 钜泉光电科技(上海)股份有限公司 Low noise temperature detection circuit and method

Also Published As

Publication number Publication date
CN101995301B (en) 2012-08-01

Similar Documents

Publication Publication Date Title
CN101995301B (en) Temperature detection circuit of integrated circuit and calibration method thereof
CN202305046U (en) Device for measuring temperature of process fluid
EP2988136B1 (en) Sensor interface circuits
CN104075841B (en) aircraft engine pressure sensor detection circuit
Abdallah et al. Defect-oriented non-intrusive RF test using on-chip temperature sensors
CN104168011B (en) A kind of analog signal input circuit
CN101949988A (en) Detection device of level-type signal disconnection fault
CN102788949A (en) Circuit used for indicating process corner and extreme temperature
US20130322491A1 (en) Welded thermocouple test apparatus
CN114167252A (en) Conduction voltage drop measuring circuit of semiconductor device
CN105606240A (en) Temperature detection circuit and semiconductor device
CN103227683B (en) A kind of method and device RRU fault being carried out to joint-detection
US10634565B2 (en) Temperature sensing apparatus and temperature sensing method thereof
CN116380266A (en) Temperature detection circuit and temperature control system
CN201037857Y (en) Device for testing output current of charger
CN110411601A (en) temperature detection method and detection circuit
US20140266412A1 (en) Systems and methods for power limiting for a programmable i/o device
CN115683395A (en) Open circuit detection circuit and open circuit detection method for thermocouple
CN106370319A (en) Temperature detection circuit
US9903905B2 (en) Semiconductor switch and method for determining a current through a semiconductor switch
CN209372241U (en) Temperature detection control circuit and temperature-detecting device
CN112013985B (en) Temperature detection device and temperature detection method
CN206114140U (en) Temperature detection circuit
CN102062847B (en) The detection method of semiconductor parameter measuring system
US20120056611A1 (en) Connection detection circuit

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING

Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI

Effective date: 20131219

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI

TR01 Transfer of patent right

Effective date of registration: 20131219

Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399

Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge

Patentee before: Shanghai Huahong NEC Electronics Co., Ltd.